A Large Magnetoresistance Effect in p-n Junction Devices by the Space-Charge Effect.
- Published in:
- Advanced Functional Materials, 2013, v. 23, n. 23, p. 2918, doi. 10.1002/adfm.201202695
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- Publication type:
- Article
Works matching DE "SPACE-charge limited devices"
Results: 12
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Power- and Low-Resistance-State-Dependent, Bipolar Reset-Switching Transitions in SiN-Based Resistive Random-Access Memory.
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- Nanoscale Research Letters, 2016, v. 11, n. 1, p. 1, doi. 10.1186/s11671-016-1572-9
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- Article
3
Model of a wedge-electrode corona discharge under saturation: Exact solutions.
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- Technical Physics, 2014, v. 59, n. 3, p. 366, doi. 10.1134/S1063784214030074
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- Article
4
Electrical Characteristics of Solid-Liquid Rectifying Junctions.
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- Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2014, v. 39, n. 1, p. 541, doi. 10.1007/s13369-013-0860-2
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- Article
5
A temperature dependent study on charge dynamics in organic molecular device: Effect of shallow traps on space charge limited behavior.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2014, v. 28, n. 15, p. -1, doi. 10.1142/S021797921450088X
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- Article
6
MODELING FOR FORMATION OF CONDUCTING PATH IN /<sub>2</sub>/ MEMORY DEVICES: BASED ON SOFT BREAKDOWN MECHANISM.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2013, v. 27, n. 26, p. -1, doi. 10.1142/S0217979213501609
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- Article
7
Large Magnetoresistance in Silicon at Room Temperature Induced by Onsite Coulomb Interaction.
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- Advanced Electronic Materials, 2017, v. 3, n. 9, p. n/a, doi. 10.1002/aelm.201700186
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- Article
8
$$\hbox {H}^{-}$$ -Like Centers and Space-Charge Effects in Cryogenic Germanium Detectors for Dark Matter Search.
- Published in:
- Journal of Low Temperature Physics, 2014, v. 176, n. 5/6, p. 802, doi. 10.1007/s10909-013-1060-x
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- Article
9
Temperature-dependent space-charge-limited conduction in BaTiO heterojunctions.
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- Journal of Materials Science, 2018, v. 53, n. 7, p. 4806, doi. 10.1007/s10853-017-1916-6
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- Article
10
Photoelectric and photovoltaic properties of structures based on mesoporous silicon passivated with iron.
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- Semiconductors, 2014, v. 48, n. 10, p. 1370, doi. 10.1134/S1063782614100042
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- Article
11
Mechanism of Carrier Transport in Hybrid GaN/AlN/Si Solar Cells.
- Published in:
- Journal of Electronic Materials, 2017, v. 46, n. 10, p. 6078, doi. 10.1007/s11664-017-5557-y
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- Article
12
Space-Charge Manipulation Under Sub-bandgap Illumination in Detector-Grade CdZnTe.
- Published in:
- Journal of Electronic Materials, 2015, v. 44, n. 10, p. 3229, doi. 10.1007/s11664-015-3835-0
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- Publication type:
- Article