Works about SINGLE electron transistors

Results: 95

CHARGE STABILITY AND CONDUCTANCE ANALYSIS OF ANTHRACENE-BASED SINGLE ELECTRON TRANSISTOR.

Published in:

International Journal of Nanoscience, 2013, v. 12, n. 6, p. -1, doi. 10.1142/S0219581X13500452

By:

SRIVASTAVA, ANURAG;
SANTHIBHUSHAN, BODDEPALLI;
DOBWAL, PANKAJ

Publication type:

Article

RECENT DEVELOPMENTS ON 3D INTEGRATION OF METALLIC SET ONTO CMOS PROCESS FOR MEMORY APPLICATION.

Published in:

International Journal of Nanoscience, 2012, v. 11, n. 4, p. -1, doi. 10.1142/S0219581X12400248

By:

JOUVET, N.;
BOUNOUAR, M. A.;
ECOFFEY, S.;
NAUENHEIM, C.;
BEAUMONT, A.;
MONFRAY, S.;
RUEDIGER, A.;
CALMON, F.;
SOUIFI, A.;
DROUIN, D.

Publication type:

Article

Decoherence imaging of spin ensembles using a scanning single-electron spin in diamond.

Published in:

Scientific Reports, 2015, p. 8119, doi. 10.1038/srep08119

By:

Luan, Lan;
Grinolds, Michael S.;
Hong, Sungkun;
Maletinsky, Patrick;
Walsworth, Ronald L.;
Yacoby, Amir

Publication type:

Article

NUMERICAL SIMULATION OF SET USING TCAD.

Published in:

i-Manager's Journal on Electronics Engineering, 2021, v. 12, n. 1, p. 29

By:

SINGHAL, TARUN;
LAMBA, VIJAY K.;
ASHRAF, JAVED

Publication type:

Article

Single Electron Transistor Based Current Mirror: Modelling and Performance Characterization.

Published in:

Journal of Nano- & Electronic Physics, 2021, v. 13, n. 1, p. 01017-1, doi. 10.21272/jnep.13(1).01017

By:

Vidhate, Ashok. D.;
Suman, Shruti

Publication type:

Article

Single Electron Transistor Based on Endohedral Metallofullerenes Me@C<sub>60</sub> (Me = Li, Na, K).

Published in:

Journal of Nano- & Electronic Physics, 2020, v. 12, n. 3, p. 1, doi. 10.21272/jnep.12(3).03017

By:

Sergeyev, D.

Publication type:

Article

A Comparative Performance Study of Hybrid SET-CMOS Based Logic Circuits for the Estimation of Robustness.

Published in:

Journal of Nano- & Electronic Physics, 2013, v. 5, n. 3, p. 03057-1

By:

Jana, Biswabandhu;
Jana, Anindya;
Kanta Sing, Jamuna;
Kumar Sarkar, Subir

Publication type:

Article

How sharply does the Anderson model depict a single-electron transistor?

Published in:

European Physical Journal B: Condensed Matter, 2018, v. 91, n. 7, p. 1, doi. 10.1140/epjb/e2018-90164-y

By:

Zawadzki, Krissia;
Oliveira, Luiz N.

Publication type:

Article

Single-electron transport through quantum point contact.

Published in:

European Physical Journal B: Condensed Matter, 2017, v. 90, n. 4, p. 1, doi. 10.1140/epjb/e2017-70310-y

By:

Akyüz, Gönül;
Siddiki, Afif

Publication type:

Article

Analysis and modeling of quantum capacitance on graphene single electron transistor.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2018, v. 32, n. 22, p. N.PAG, doi. 10.1142/S0217979218502351

By:

Hosseini, Vahideh Khadem;
Dideban, Daryoosh;
Ahmadi, Mohammad Taghi;
Ismail, Razali

Publication type:

Article

Oxidizable Ketones: Persistent Radical Cations from the Single‐Electron Oxidation of 2,3‐Diaminocyclopropenones.

Published in:

Angewandte Chemie, 2019, v. 131, n. 24, p. 8133, doi. 10.1002/ange.201902265

By:

Strater, Zack M.;
Rauch, Michael;
Jockusch, Steffen;
Lambert, Tristan H.

Publication type:

Article

Design of a Single-Electron Memory Operating at Room Temperature.

Published in:

ISRN Nanotechnology, 2013, p. 1, doi. 10.1155/2013/587436

By:

Touati, Amine;
Chatbouri, Samir;
Adel, Kalboussi

Publication type:

Article

In Silico Modeling of Indigo and Tyrian Purple Single-Electron Nano-Transistors Using Density Functional Theory Approach.

Published in:

Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-2193-7

By:

Shityakov, Sergey;
Roewer, Norbert;
Förster, Carola;
Broscheit, Jens-Albert

Publication type:

Article

Investigating a Fluorobenzene Based Single Electron Transistor As a Toxic Gas Sensor.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 3, p. 1022, doi. 10.1007/s11664-020-08663-0

By:

Gaurav, Kumar;
SanthiBhushan, Boddepalli;
Mehla, Ravi;
Srivastava, Anurag

Publication type:

Article

Analysis and Modeling of Fullerene Single Electron Transistor Based on Quantum Dot Arrays at Room Temperature.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 8, p. 4799, doi. 10.1007/s11664-018-6366-7

By:

Khadem Hosseini, Vahideh;
Ahmadi, Mohammad Taghi;
Ismail, Razali

Publication type:

Article

Current Analysis and Modeling of Fullerene Single-Electron Transistor at Room Temperature.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 7, p. 4294, doi. 10.1007/s11664-017-5354-7

By:

Khadem Hosseini, Vahideh;
Ahmadi, Mohammad;
Afrang, Saeid;
Ismail, Razali

Publication type:

Article

Influence of Boron Substitution on Conductance of Pyridine- and Pentane-Based Molecular Single Electron Transistors: First-Principles Analysis.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2233, doi. 10.1007/s11664-015-4287-2

By:

Srivastava, Anurag;
Santhibhushan, B.;
Sharma, Vikash;
Kaur, Kamalpreet;
Shahzad Khan, Md.;
Marathe, Madura;
Sarkar, Abir;
Shahid Khan, Mohd.

Publication type:

Article

Orientation-Dependent Performance Analysis of Benzene/Graphene-Based Single-Electron Transistors.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3449, doi. 10.1007/s11664-014-3272-5

By:

Srivastava, Anurag;
Kaur, Kamalpreet;
Sharma, Ritu;
Chauhan, Priyanka;
Sharma, U.;
Pathak, Chetan

Publication type:

Article

Modeling of a Room-Temperature Silicon Quantum Dot-Based Single-Electron Transistor and the Effect of Energy-Level Broadening on Its Performance.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 47, doi. 10.1007/s11664-012-2315-z

By:

Miralaie, M.;
Leilaeioun, M.;
Abbasian, K.

Publication type:

Article

Thermoelectric properties of topological chains coupled to a quantum dot.

Published in:

Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-28491-6

By:

Lima, A. C. P.;
Ribeiro, R. C. Bento;
Correa, J. H.;
Deus, Fernanda;
Figueira, M. S.;
Continentino, Mucio A.

Publication type:

Article

Trapping mechanisms in insulated-gate GaN power devices: Understanding and characterization techniques.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600607

By:

Yang, Shu;
Liu, Shenghou;
Lu, Yunyou;
Chen, Kevin J.

Publication type:

Article

Design and Analysis of Energy Efficient Domino Logic Architectures with Single Electron Transistors in Pull Down Network and Keeper Topology.

Published in:

EAI Endorsed Transactions on the Energy Web, 2021, v. 8, n. 33, p. 1, doi. 10.4108/eai.27-11-2020.167287

By:

AnishFathima, B.;
Mahaboob, M.

Publication type:

Article

Effect of temperature-bias annealing on the hysteresis and subthreshold behavior of multilayer MoS<sub>2</sub> transistors.

Published in:

Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 11, p. 797, doi. 10.1002/pssr.201600209

By:

Giannazzo, F.;
Fisichella, G.;
Piazza, A.;
Di Franco, S.;
Greco, G.;
Agnello, S.;
Roccaforte, F.

Publication type:

Article

Evaluation of Room-Temperature Performance of Ultra-Small Single-Electron Transistor-Based Analog-to-Digital Convertors.

Published in:

Journal of Circuits, Systems & Computers, 2018, v. 27, n. 14, p. N.PAG, doi. 10.1142/S0218126618502171

By:

Miralaie, Mostafa;
Mir, Ali

Publication type:

Article

Nano-Scale Silicon Quantum Dot-Based Single-Electron Transistors and Their Application to Design of Analog-to-Digital Convertors at Room Temperature.

Published in:

Journal of Circuits, Systems & Computers, 2017, v. 26, n. 12, p. -1, doi. 10.1142/S0218126617502012

By:

Aminzadeh, Hamed;
Dashti, Mohammad Ali;
Miralaei, Mohammad

Publication type:

Article

Electron Transport Through Thiolized Gold Nanoparticles in Single-Electron Transistor.

Published in:

Journal of Superconductivity & Novel Magnetism, 2015, v. 28, n. 3, p. 781, doi. 10.1007/s10948-014-2661-6

By:

Gerasimov, Y.;
Shorokhov, V.;
Snigirev, O.

Publication type:

Article

Celebrating Physics Down Under: the 20th Asian Physics Olympiad in Adelaide, Australia.

Published in:

AAPPS Bulletin, 2019, v. 29, n. 4, p. 46

By:

VERDON, MATTHEW;
VERDON, ALIX

Publication type:

Article

0D/2D Heterostructures Vertical Single Electron Transistor.

Published in:

Advanced Functional Materials, 2021, v. 31, n. 9, p. 1, doi. 10.1002/adfm.202008255

By:

Mouafo, Louis Donald Notemgnou;
Godel, Florian;
Simon, Laurent;
Dappe, Yannick J.;
Baaziz, Walid;
Noumbé, Ulrich Nguétchuissi;
Lorchat, Etienne;
Martin, Marie‐Blandine;
Berciaud, Stéphane;
Doudin, Bernard;
Ersen, Ovidiu;
Dlubak, Bruno;
Seneor, Pierre;
Dayen, Jean‐Francois

Publication type:

Article

Atom‐by‐Atom Fabrication of Single and Few Dopant Quantum Devices.

Published in:

Advanced Functional Materials, 2019, v. 29, n. 52, p. N.PAG, doi. 10.1002/adfm.201903475

By:

Wyrick, Jonathan;
Wang, Xiqiao;
Kashid, Ranjit V.;
Namboodiri, Pradeep;
Schmucker, Scott W.;
Hagmann, Joseph A.;
Liu, Keyi;
Stewart, Michael D.;
Richter, Curt A.;
Bryant, Garnett W.;
Silver, Richard M.

Publication type:

Article

Etched graphene single electron transistors on hexagonal boron nitride in high magnetic fields.

Published in:

Physica Status Solidi (B), 2013, v. 250, n. 12, p. 2692, doi. 10.1002/pssb.201300295

By:

Epping, A.;
Engels, S.;
Volk, C.;
Watanabe, K.;
Taniguchi, T.;
Trellenkamp, S.;
Stampfer, C.

Publication type:

Article

Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition.

Published in:

Applied Sciences (2076-3417), 2017, v. 7, n. 3, p. 246, doi. 10.3390/app7030246

By:

Karbasian, Golnaz;
McConnell, Michael S.;
George, Hubert;
Schneider, Louisa C.;
Filmer, Matthew J.;
Orlov, Alexei O.;
Nazarov, Alexei N.;
Snider, Gregory L.

Publication type:

Article

Application of Single-Electron Transistor to Biomolecule and Ion Sensors.

Published in:

Applied Sciences (2076-3417), 2016, v. 6, n. 4, p. 94, doi. 10.3390/app6040094

By:

Nakajima, Anri

Publication type:

Article

Detection of On-Chip Generated Weak Microwave Radiation Using Superconducting Normal-Metal SET.

Published in:

Applied Sciences (2076-3417), 2016, v. 6, n. 2, p. 35, doi. 10.3390/app6020035

By:

Lotkhov, Sergey V.;
Zorin, Alexander B.;
Jalali-Jafari, Behdad

Publication type:

Article

3-D Confined SWS-FETs Combining Quantum Well and Quantum Dot Superlattice (QDSL).

Published in:

International Journal of High Speed Electronics & Systems, 2020, v. 29, n. 1-4, p. N.PAG, doi. 10.1142/S012915642040011X

By:

Jain, F.;
Saman, B.;
Gudlavalleti, R. H.;
Mays, R.;
Chandy, J.;
Heller, Evan

Publication type:

Article

Tunneling Rates of Electron Pumping in the R-SINIS Transistor.

Published in:

Journal of Low Temperature Physics, 2014, v. 175, n. 3/4, p. 564, doi. 10.1007/s10909-013-1080-6

By:

Bubanja, Vladimir

Publication type:

Article

Single electron transistor: Energy-level broadening effect and thermionic contribution.

Published in:

Semiconductors, 2017, v. 51, n. 12, p. 1656, doi. 10.1134/S1063782617120144

By:

Nasri, A.;
Boubaker, A.;
Khaldi, W.;
Hafsi, B.;
Kalboussi, A.

Publication type:

Article

Anomalous zero-temperature magnetopolaronic blockade of resonant electron tunneling in Majorana-resonant-level single-electron transistor.

Published in:

Condensed Matter Physics, 2018, v. 21, n. 2, p. 1, doi. 10.5488/CMP.21.23703

By:

Skorobagatko, G. A.

Publication type:

Article

Fabrication of atomic junctions with experimental parameters optimized using ground-state searches of Ising spin computing.

Published in:

Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-52438-5

By:

Sakai, Shotaro;
Hirata, Yosuke;
Ito, Mitsuki;
Shirakashi, Jun-ichi

Publication type:

Article

Spin skyrmion gaps as signatures of strong-coupling insulators in magic-angle twisted bilayer graphene.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-42275-6

By:

Yu, Jiachen;
Foutty, Benjamin A.;
Kwan, Yves H.;
Barber, Mark E.;
Watanabe, Kenji;
Taniguchi, Takashi;
Shen, Zhi-Xun;
Parameswaran, Siddharth A.;
Feldman, Benjamin E.

Publication type:

Article

Single spins in self-assembled quantum dots.

Published in:

Nature Materials, 2013, v. 12, n. 6, p. 483, doi. 10.1038/nmat3585

By:

Warburton, Richard J.

Publication type:

Article

Low Temperature Characteristics of Schottky Barrier Single Electron and Single Hole Transistors.

Published in:

ETRI Journal, 2012, v. 34, n. 6, p. 950, doi. 10.4218/etrij.12.0212.0194

By:

Moongyu Jang;
Myungsim Jun;
Taehyoung Zyung

Publication type:

Article

Progress in intermolecular pinacol cross coupling methodologies.

Published in:

ARKIVOC: Online Journal of Organic Chemistry, 2012, p. 134

By:

Terra, Bruna S.;
Macedo Jr., Fernando

Publication type:

Article

Measuring of an unknown voltage by using single electron transistor based voltmeter.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, v. 24, n. 3, p. 277, doi. 10.15407/spqeo24.03.277

By:

Biswas, A. K.

Publication type:

Article

Single electron effects in silicon quantum devices.

Published in:

Journal of Nanoparticle Research, 2013, v. 15, n. 5, p. 1, doi. 10.1007/s11051-013-1615-4

By:

Prati, Enrico

Publication type:

Article

Thermo Electronic Properties of DNA Molecule as a Single Electron Transistor(SET).

Published in:

Journal of College of Education for Pure Science, 2023, v. 13, n. 2, p. 25, doi. 10.32792/utq.jceps.10.01.01

By:

AL-Saidi, Shakir A. A.;
Mokhilif, Mohammed H.;
Tuaimah, Ali Natheer

Publication type:

Article

Light Sensor Platform Based on the Integration of Bacteriorhodopsin with a Single Electron Transistor.

Published in:

Active & Passive Electronic Components, 2011, p. 1, doi. 10.1155/2011/586924

By:

Walczak, Karl A.;
Bergstrom, Paul L.;
Friedrich, Craig R.

Publication type:

Article

Simulating the Electron Transmission with Different Defective Carbon Nanotubes.

Published in:

Acta Physica Polonica: A, 2012, v. 122, n. 1, p. 190, doi. 10.12693/APhysPolA.122.190

By:

Nizam, R.;
Rizvi, S. M. A.;
Azam, A.

Publication type:

Article

Dielectric barrier discharge plasma reactor.

Published in:

High Energy Chemistry, 2016, v. 50, n. 4, p. 304, doi. 10.1134/S0018143916040111

By:

Malanichev, V.;
Malashin, M.;
Moshkunov, S.;
Khomich, V.

Publication type:

Article

STUDY OF ELECTROSTATIC POTENTIAL SURFACE AROUND BIPYRAMIDAL GaAs QUANTUM DOT.

Published in:

Digest Journal of Nanomaterials & Biostructures (DJNB), 2012, v. 7, n. 4, p. 1787

By:

ITHNIN, HANAFI;
MAT ISA, AHMAD RADZI;
KASMIN, MOHD KHALID;
SAEED, M. A.

Publication type:

Article

A New Time-Dependent Circuit Model for a Single Electron Box and its Application in Single Electron-Based Logic Gates.

Published in:

Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2013, v. 38, n. 11, p. 3145, doi. 10.1007/s13369-012-0465-1

By:

Sharifi, Mohammad;
Jamshidnezhad, Kasra

Publication type:

Article