Works matching DE "SINGLE electron transistors"

Results: 94

Detecting Air Pollutant Molecules Using Tube-Shaped Single Electron Transistor.

Published in:

Molecules, 2021, v. 26, n. 23, p. 7098, doi. 10.3390/molecules26237098

By:

Huang, Zhongkai;
Peng, Xiangyang;
Peng, Cheng;
Huang, Jin;
Bo, Maolin;
Yao, Chuang;
Li, Jibiao

Publication type:

Article

Simulating the Electron Transmission with Different Defective Carbon Nanotubes.

Published in:

Acta Physica Polonica: A, 2012, v. 122, n. 1, p. 190, doi. 10.12693/APhysPolA.122.190

By:

Nizam, R.;
Rizvi, S. M. A.;
Azam, A.

Publication type:

Article

Probing Majorana bound states via counting statistics of a single electron transistor.

Published in:

Scientific Reports, 2015, p. 11416, doi. 10.1038/srep11416

By:

Li, Zeng-Zhao;
Lam, Chi-Hang;
You, J. Q.

Publication type:

Article

Decoherence imaging of spin ensembles using a scanning single-electron spin in diamond.

Published in:

Scientific Reports, 2015, p. 8119, doi. 10.1038/srep08119

By:

Luan, Lan;
Grinolds, Michael S.;
Hong, Sungkun;
Maletinsky, Patrick;
Walsworth, Ronald L.;
Yacoby, Amir

Publication type:

Article

Trapping mechanisms in insulated-gate GaN power devices: Understanding and characterization techniques.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600607

By:

Yang, Shu;
Liu, Shenghou;
Lu, Yunyou;
Chen, Kevin J.

Publication type:

Article

Theoretical considerations on charged graphene as active gamma radiation shields.

Published in:

European Physical Journal - Applied Physics, 2018, v. 81, n. 3, p. N.PAG, doi. 10.1051/epjap/2018170387

By:

Fornalski, Krzysztof Wojciech

Publication type:

Article

Multiple tunnel junctions based nanowire photodetector model for single charge detection.

Published in:

European Physical Journal - Applied Physics, 2013, v. 63, n. 1, p. 00, doi. 10.1051/epjap/2013120238

By:

Chatbouri, Samir;
Touati, A.;
Troudi, M.;
Sghaier, N.;
Kalboussi, A.

Publication type:

Article

Atomic-scale control of tunneling in donor-based devices.

Published in:

Communications Physics, 2020, v. 3, n. 1, p. 1, doi. 10.1038/s42005-020-0343-1

By:

Wang, Xiqiao;
Wyrick, Jonathan;
Kashid, Ranjit V.;
Namboodiri, Pradeep;
Schmucker, Scott W.;
Murphy, Andrew;
Stewart, M. D.;
Silver, Richard M.

Publication type:

Article

Orthodox Theory Monte-Carlo Simulation of Single-Electron Logic Circuits.

Published in:

Informacije MIDEM: Journal of Microelectronics, Electronic Components & Materials, 2018, v. 48, n. 4, p. 241, doi. 10.33180/InfMIDEM2018.407

By:

Kikelj, Miha;
Lipovšek, Benjamin;
Smole, Franc

Publication type:

Article

Light Sensor Platform Based on the Integration of Bacteriorhodopsin with a Single Electron Transistor.

Published in:

Active & Passive Electronic Components, 2011, p. 1, doi. 10.1155/2011/586924

By:

Walczak, Karl A.;
Bergstrom, Paul L.;
Friedrich, Craig R.

Publication type:

Article

Editorial for Special Issue "Functional Graphene-Based Nanodevices".

Published in:

Nanomaterials (2079-4991), 2024, v. 14, n. 5, p. 417, doi. 10.3390/nano14050417

By:

Cheng, Qijin;
Zhou, Jian

Publication type:

Article

Variable-Barrier Quantum Coulomb Blockade Effect in Nanoscale Transistors.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 24, p. 4437, doi. 10.3390/nano12244437

By:

Yadav, Pooja;
Chakraborty, Soumya;
Moraru, Daniel;
Samanta, Arup

Publication type:

Article

Current Status of Field-Effect Transistors for Biosensing Applications.

Published in:

2022

By:

Ravariu, Cristian

Publication type:

Editorial

Spin skyrmion gaps as signatures of strong-coupling insulators in magic-angle twisted bilayer graphene.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-42275-6

By:

Yu, Jiachen;
Foutty, Benjamin A.;
Kwan, Yves H.;
Barber, Mark E.;
Watanabe, Kenji;
Taniguchi, Takashi;
Shen, Zhi-Xun;
Parameswaran, Siddharth A.;
Feldman, Benjamin E.

Publication type:

Article

Corrigendum: Hybrid single-electron transistor as a source of quantized electric current.

Published in:

Nature Physics, 2014, v. 10, n. 5, p. 399, doi. 10.1038/nphys2959

By:

Pekola, Jukka P.;
Vartiainen, Juha J.;
Möttönen, Mikko;
Saira, Olli-Pentti;
Meschke, Matthias;
Averin, Dmitri V.

Publication type:

Article

Celebrating Physics Down Under: the 20th Asian Physics Olympiad in Adelaide, Australia.

Published in:

AAPPS Bulletin, 2019, v. 29, n. 4, p. 46

By:

VERDON, MATTHEW;
VERDON, ALIX

Publication type:

Article

Terahertz Radiation Detectors Using CMOS Compatible SOI Substrates.

Published in:

Advanced Functional Materials, 2024, v. 34, n. 41, p. 1, doi. 10.1002/adfm.202400313

By:

Hasan, Md Soyaeb;
Khan, Asif Abdullah;
Shahzadi, Shamaila;
Bagheri, Majid Haji;
Ban, Dayan

Publication type:

Article

DESIGN AND SIMULATION OF TWO BITS SINGLE-ELECTRON LOGIC CIRCUIT USING DOUBLE QUANTUM DOT SINGLE ELECTRON TRANSISTOR.

Published in:

International Journal of Technology, 2014, v. 5, n. 2, p. 152, doi. 10.14716/ijtech.v5i2.405

By:

Udhiarto, Arief;
Tamam, Mohammad Ali;
Nuryadi, Ratno;
Hartanto, Djoko

Publication type:

Article

Design of a Single-Electron Memory Operating at Room Temperature.

Published in:

ISRN Nanotechnology, 2013, p. 1, doi. 10.1155/2013/587436

By:

Touati, Amine;
Chatbouri, Samir;
Adel, Kalboussi

Publication type:

Article

Design and Analysis of Energy Efficient Domino Logic Architectures with Single Electron Transistors in Pull Down Network and Keeper Topology.

Published in:

EAI Endorsed Transactions on the Energy Web, 2021, v. 8, n. 33, p. 1, doi. 10.4108/eai.27-11-2020.167287

By:

AnishFathima, B.;
Mahaboob, M.

Publication type:

Article

Effect of temperature-bias annealing on the hysteresis and subthreshold behavior of multilayer MoS<sub>2</sub> transistors.

Published in:

Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 11, p. 797, doi. 10.1002/pssr.201600209

By:

Giannazzo, F.;
Fisichella, G.;
Piazza, A.;
Di Franco, S.;
Greco, G.;
Agnello, S.;
Roccaforte, F.

Publication type:

Article

Single electron effects in silicon quantum devices.

Published in:

Journal of Nanoparticle Research, 2013, v. 15, n. 5, p. 1, doi. 10.1007/s11051-013-1615-4

By:

Prati, Enrico

Publication type:

Article

NUMERICAL SIMULATION OF SET USING TCAD.

Published in:

i-Manager's Journal on Electronics Engineering, 2021, v. 12, n. 1, p. 29

By:

SINGHAL, TARUN;
LAMBA, VIJAY K.;
ASHRAF, JAVED

Publication type:

Article

Single Electron Transistor Based Current Mirror: Modelling and Performance Characterization.

Published in:

Journal of Nano- & Electronic Physics, 2021, v. 13, n. 1, p. 01017-1, doi. 10.21272/jnep.13(1).01017

By:

Vidhate, Ashok. D.;
Suman, Shruti

Publication type:

Article

Single Electron Transistor Based on Endohedral Metallofullerenes Me@C<sub>60</sub> (Me = Li, Na, K).

Published in:

Journal of Nano- & Electronic Physics, 2020, v. 12, n. 3, p. 1, doi. 10.21272/jnep.12(3).03017

By:

Sergeyev, D.

Publication type:

Article

A Comparative Performance Study of Hybrid SET-CMOS Based Logic Circuits for the Estimation of Robustness.

Published in:

Journal of Nano- & Electronic Physics, 2013, v. 5, n. 3, p. 03057-1

By:

Jana, Biswabandhu;
Jana, Anindya;
Kanta Sing, Jamuna;
Kumar Sarkar, Subir

Publication type:

Article

Editorial for the Special Issue on Miniaturized Transistors.

Published in:

2019

By:

Filipovic, Lado;
Grasser, Tibor

Publication type:

Editorial

Scanning the Issue.

Published in:

IETE Journal of Research, 2022, v. 68, n. 2, p. 791, doi. 10.1080/03772063.2022.2073087

By:

Koul, Shiban K

Publication type:

Article

A Novel Slice-Based High-Performance ALU Design Using Prospective Single Electron Transistor.

Published in:

IETE Journal of Research, 2022, v. 68, n. 2, p. 1115, doi. 10.1080/03772063.2019.1642803

By:

Patel, Rashmit;
Agrawal, Yash;
Parekh, Rutu

Publication type:

Article

A New Time-Dependent Circuit Model for a Single Electron Box and its Application in Single Electron-Based Logic Gates.

Published in:

Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2013, v. 38, n. 11, p. 3145, doi. 10.1007/s13369-012-0465-1

By:

Sharifi, Mohammad;
Jamshidnezhad, Kasra

Publication type:

Article

GRAPHYNE-BASED SINGLE ELECTRON TRANSISTOR: AB INITIO ANALYSIS.

Published in:

NANO (1793-2920), 2014, v. 9, n. 3, p. -1, doi. 10.1142/S1793292014500325

By:

SARMA, J. V. N.;
CHOWDHURY, RAJIB;
JAYAGANTHAN, R.

Publication type:

Article

Investigating a Fluorobenzene Based Single Electron Transistor As a Toxic Gas Sensor.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 3, p. 1022, doi. 10.1007/s11664-020-08663-0

By:

Gaurav, Kumar;
SanthiBhushan, Boddepalli;
Mehla, Ravi;
Srivastava, Anurag

Publication type:

Article

Analysis and Modeling of Fullerene Single Electron Transistor Based on Quantum Dot Arrays at Room Temperature.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 8, p. 4799, doi. 10.1007/s11664-018-6366-7

By:

Khadem Hosseini, Vahideh;
Ahmadi, Mohammad Taghi;
Ismail, Razali

Publication type:

Article

Current Analysis and Modeling of Fullerene Single-Electron Transistor at Room Temperature.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 7, p. 4294, doi. 10.1007/s11664-017-5354-7

By:

Khadem Hosseini, Vahideh;
Ahmadi, Mohammad;
Afrang, Saeid;
Ismail, Razali

Publication type:

Article

Influence of Boron Substitution on Conductance of Pyridine- and Pentane-Based Molecular Single Electron Transistors: First-Principles Analysis.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 4, p. 2233, doi. 10.1007/s11664-015-4287-2

By:

Srivastava, Anurag;
Santhibhushan, B.;
Sharma, Vikash;
Kaur, Kamalpreet;
Shahzad Khan, Md.;
Marathe, Madura;
Sarkar, Abir;
Shahid Khan, Mohd.

Publication type:

Article

Orientation-Dependent Performance Analysis of Benzene/Graphene-Based Single-Electron Transistors.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 9, p. 3449, doi. 10.1007/s11664-014-3272-5

By:

Srivastava, Anurag;
Kaur, Kamalpreet;
Sharma, Ritu;
Chauhan, Priyanka;
Sharma, U.;
Pathak, Chetan

Publication type:

Article

Modeling of a Room-Temperature Silicon Quantum Dot-Based Single-Electron Transistor and the Effect of Energy-Level Broadening on Its Performance.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 1, p. 47, doi. 10.1007/s11664-012-2315-z

By:

Miralaie, M.;
Leilaeioun, M.;
Abbasian, K.

Publication type:

Article

CHARGE STABILITY AND CONDUCTANCE ANALYSIS OF ANTHRACENE-BASED SINGLE ELECTRON TRANSISTOR.

Published in:

International Journal of Nanoscience, 2013, v. 12, n. 6, p. -1, doi. 10.1142/S0219581X13500452

By:

SRIVASTAVA, ANURAG;
SANTHIBHUSHAN, BODDEPALLI;
DOBWAL, PANKAJ

Publication type:

Article

RECENT DEVELOPMENTS ON 3D INTEGRATION OF METALLIC SET ONTO CMOS PROCESS FOR MEMORY APPLICATION.

Published in:

International Journal of Nanoscience, 2012, v. 11, n. 4, p. -1, doi. 10.1142/S0219581X12400248

By:

JOUVET, N.;
BOUNOUAR, M. A.;
ECOFFEY, S.;
NAUENHEIM, C.;
BEAUMONT, A.;
MONFRAY, S.;
RUEDIGER, A.;
CALMON, F.;
SOUIFI, A.;
DROUIN, D.

Publication type:

Article

Dielectric barrier discharge plasma reactor.

Published in:

High Energy Chemistry, 2016, v. 50, n. 4, p. 304, doi. 10.1134/S0018143916040111

By:

Malanichev, V.;
Malashin, M.;
Moshkunov, S.;
Khomich, V.

Publication type:

Article

Radio-frequency single electron transistors in physically defined silicon quantum dots with a sensitive phase response.

Published in:

Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-85231-4

By:

Mizokuchi, Raisei;
Bugu, Sinan;
Hirayama, Masaru;
Yoneda, Jun;
Kodera, Tetsuo

Publication type:

Article

Atomic-like charge qubit in a carbon nanotube enabling electric and magnetic field nano-sensing.

Published in:

Nature Communications, 2020, v. 11, n. 1, p. 1, doi. 10.1038/s41467-020-16001-5

By:

Khivrich, I.;
Ilani, S.

Publication type:

Article

Modeling and Simulation of Single-Electron Transistor (SET) with Aluminum Island Using Neural Network.

Published in:

Carpathian Journal of Electronic & Computer Engineering, 2019, v. 12, n. 1, p. 23, doi. 10.2478/cjece-2019-0005

By:

Abdelkrim, MOSTEFAI

Publication type:

Article

In Silico Modeling of Indigo and Tyrian Purple Single-Electron Nano-Transistors Using Density Functional Theory Approach.

Published in:

Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-2193-7

By:

Shityakov, Sergey;
Roewer, Norbert;
Förster, Carola;
Broscheit, Jens-Albert

Publication type:

Article

Single electron transistor: Energy-level broadening effect and thermionic contribution.

Published in:

Semiconductors, 2017, v. 51, n. 12, p. 1656, doi. 10.1134/S1063782617120144

By:

Nasri, A.;
Boubaker, A.;
Khaldi, W.;
Hafsi, B.;
Kalboussi, A.

Publication type:

Article

Anomalous zero-temperature magnetopolaronic blockade of resonant electron tunneling in Majorana-resonant-level single-electron transistor.

Published in:

Condensed Matter Physics, 2018, v. 21, n. 2, p. 1, doi. 10.5488/CMP.21.23703

By:

Skorobagatko, G. A.

Publication type:

Article

Oxidizable Ketones: Persistent Radical Cations from the Single‐Electron Oxidation of 2,3‐Diaminocyclopropenones.

Published in:

Angewandte Chemie, 2019, v. 131, n. 24, p. 8133, doi. 10.1002/ange.201902265

By:

Strater, Zack M.;
Rauch, Michael;
Jockusch, Steffen;
Lambert, Tristan H.

Publication type:

Article

How sharply does the Anderson model depict a single-electron transistor?

Published in:

European Physical Journal B: Condensed Matter, 2018, v. 91, n. 7, p. 1, doi. 10.1140/epjb/e2018-90164-y

By:

Zawadzki, Krissia;
Oliveira, Luiz N.

Publication type:

Article

Single-electron transport through quantum point contact.

Published in:

European Physical Journal B: Condensed Matter, 2017, v. 90, n. 4, p. 1, doi. 10.1140/epjb/e2017-70310-y

By:

Akyüz, Gönül;
Siddiki, Afif

Publication type:

Article

Error probability independent delay analysis of single electronics circuits.

Published in:

International Journal of Circuit Theory & Applications, 2018, v. 46, n. 2, p. 290, doi. 10.1002/cta.2389

By:

Jain, Amit;
Ghosh, Arpita;
Dutta, Pranab Kishore;
Singh, N. Basanta;
Sarkar, Subir Kumar

Publication type:

Article