Works matching DE "SILICON oxide films"
Results: 182
Growth and Optical Parameters of ZnO Films on Macroporous Silicon Obtained by Atomic Layer Deposition.
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- Applied Solar Energy (19349424), 2024, v. 60, n. 4, p. 609, doi. 10.3103/S0003701X24602448
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Growth characteristics and electrical properties of SiO thin films prepared using plasma-enhanced atomic layer deposition and chemical vapor deposition with an aminosilane precursor.
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- Journal of Materials Science, 2016, v. 51, n. 11, p. 5082, doi. 10.1007/s10853-016-9811-0
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Scratch-resistant hydrophobic and oleophobic coatings prepared by simple PECVD method.
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- Journal of Materials Science, 2014, v. 49, n. 14, p. 4790, doi. 10.1007/s10853-014-8178-3
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Influences of film composition and annealing on the mechanical and electrical properties of W-Mo thin films.
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- Journal of Materials Science, 2012, v. 47, n. 6, p. 2725, doi. 10.1007/s10853-011-6098-z
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Hot-water treatment of sol–gel derived SiO<sub>2</sub>–TiO<sub>2</sub> microparticles and application to electrophoretic deposition for thick films.
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- Journal of Materials Science, 2006, v. 41, n. 24, p. 8101, doi. 10.1007/s10853-006-0419-7
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Manipulating mammalian cell morphologies using chemical-mechanical polished integrated circuit chips.
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- Science & Technology of Advanced Materials, 2017, v. 18, n. 1, p. 839, doi. 10.1080/14686996.2017.1388135
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Atomic and Electronic Structure of SiOx Films Obtained with Hydrogen Electron Cyclotron Resonance Plasma.
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- Journal of Experimental & Theoretical Physics, 2020, v. 131, n. 6, p. 940, doi. 10.1134/S1063776120110084
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Two-Step Deposition of Silicon Oxide Films Using the Gas Phase Generation of Nanoparticles in the Chemical Vapor Deposition Process.
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- Coatings (2079-6412), 2021, v. 11, n. 3, p. 365, doi. 10.3390/coatings11030365
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Gas Permeation, Mechanical Behavior and Cytocompatibility of Ultrathin Pure and Doped Diamond-Like Carbon and Silicon Oxide Films.
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- Coatings (2079-6412), 2013, v. 3, n. 4, p. 268, doi. 10.3390/coatings3040268
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Modeling and analysis of birefringence in magneto-optical thin film made by SiO<sub>2</sub>/ZrO<sub>2</sub> doped with ferrite of cobalt.
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- Applied Physics B: Lasers & Optics, 2010, v. 99, n. 3, p. 553, doi. 10.1007/s00340-010-3930-0
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Correlation between defect-related electroluminescence and charge trapping in Gd-implanted SiO<sub>2</sub> layers.
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- Applied Physics B: Lasers & Optics, 2007, v. 88, n. 2, p. 241, doi. 10.1007/s00340-007-2700-0
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Preparation of Hf-Si-O films by simultaneous deposition and reaction process using pulsed ion-beam evaporation.
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- Electrical Engineering in Japan, 2005, v. 152, n. 1, p. 1, doi. 10.1002/eej.20099
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Large Area Silica Nano Grids by Homogeneous High Resolution Laser Patterning of SiO<sub>x</sub>-Films.
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- Journal of Laser Micro / Nanoengineering, 2015, v. 10, n. 2, p. 158, doi. 10.2961/jlmn.2015.02.0009
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ENHANCED FORMATION OF NANOCRYSTALS IN <sub>2</sub> BY LIGHT-FILTERING RAPID THERMAL ANNEALING.
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- Surface Review & Letters, 2015, v. 22, n. 4, p. -1, doi. 10.1142/S0218625X15500493
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OXIDATION RESISTANT (Mo,W)Si<sub>2</sub> COATING FOR SiC-COATED CARBON/CARBON COMPOSITES BY IN SITU FORMATION METHOD.
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- Surface Review & Letters, 2009, v. 16, n. 2, p. 309, doi. 10.1142/S0218625X09012640
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SIMS Study of Silicon Oxynitride Rapid Thermally Grown in Nitric Oxide.
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- Surface Review & Letters, 2001, v. 8, n. 5, p. 569, doi. 10.1016/S0218-625X(01)00145-2
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A Study on Electroluminescence from Au/Ge-Containing Silicon Oxide/p-Si and Au/Si-Rich Silicon Oxide/p-Si Structures.
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- Surface Review & Letters, 2001, v. 8, n. 5, p. 483, doi. 10.1142/S0218625X01001361
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Atomic Layer Deposition of SiO[sub 2] Using Catalyzed and Uncatalyzed Self-Limiting Surface Reactions.
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- Surface Review & Letters, 1999, v. 6, n. 3/4, p. 435, doi. 10.1142/S0218625X99000433
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Characteristics of solid-phase diffused ultra-shallow junction using phosphorus doped silicon oxide films for fabrication of sub-100 nm SOI MOSFET.
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- Journal of Materials Science, 2004, v. 39, n. 5, p. 1819, doi. 10.1023/B:JMSC.0000016194.81327.b0
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Electric field induced interfacial reaction of Au-Ag bimetal film on SiO2 surface.
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- Journal of Materials Science, 2000, v. 35, n. 14, p. 3655, doi. 10.1023/A:1004886118489
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Oxidation kinetics of low-oxygen silicon carbide fiber.
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- Journal of Materials Science, 2000, v. 35, n. 13, p. 3301, doi. 10.1023/A:1004883607913
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- Article
Optical properties and bandgap evolution of ALD HfSiO films.
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- Nanoscale Research Letters, 2015, v. 10, n. 1, p. 1, doi. 10.1186/s11671-014-0724-z
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- Article
Interface properties of SiO<sub>x</sub>N<sub>y</sub> layer on Si prepared by atmospheric-pressure plasma oxidation-nitridation.
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- Nanoscale Research Letters, 2013, n. 5, p. 1, doi. 10.1186/1556-276X-8-201
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- Article
Advantages of N-Type Hydrogenated Microcrystalline Silicon Oxide Films for Micromorph Silicon Solar Cells.
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- International Journal of Photoenergy, 2013, p. 1, doi. 10.1155/2013/513284
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Excess Si Atoms Near the Pyrolytic-Gas-Passivated Ultrathin Silicon Oxide/Si(100) Interface.
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- Journal of Electronic Materials, 2004, v. 33, n. 7, p. 802, doi. 10.1007/s11664-004-0245-0
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- Article
无裂纹SiO<sub>2</sub>薄膜的纳尺度电射流叠层沉积工艺.
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- Electronic Components & Materials, 2018, v. 37, n. 7, p. 83, doi. 10.14106/j.cnki.1001-2028.2018.07.016
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Interface analysis of ultrathin SiO<sub>2</sub> layers between c‐Si substrates and phosphorus‐doped poly‐Si by theoretical surface potential analysis using the injection‐dependent lifetime.
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- Progress in Photovoltaics, 2021, v. 29, n. 1, p. 32, doi. 10.1002/pip.3338
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Probing for Fluorine in Nitrided SiO[sub 2] Films by Ion Beam Analysis.
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- Modern Physics Letters B, 2001, v. 15, n. 28/29, p. 1332, doi. 10.1142/S021798490100324X
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Observation of Nanometric Silicon Oxide Bifilms in a Water-Atomized Hypereutectic Cast Iron Powder.
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- Metallurgical & Materials Transactions. Part B, 2016, v. 47, n. 5, p. 2971, doi. 10.1007/s11663-016-0730-x
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Highly Miniaturized On-Chip 180° Hybrid Employing Periodic Ground Strip Structure for Application to Silicon RFIC.
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- ETRI Journal, 2011, v. 33, n. 1, p. 13, doi. 10.4218/etrij.11.0110.0146
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A Polymer/Carbon‐Nanotube Ink as a Boron‐Dopant/Inorganic‐Passivation Free Carrier Selective Contact for Silicon Solar Cells with over 21% Efficiency.
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- Advanced Functional Materials, 2020, v. 30, n. 38, p. 1, doi. 10.1002/adfm.202004476
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Stabilization of TiO-CoO thin films on a glass fiber material by introduction of silica into the matrix.
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- Doklady Physical Chemistry, 2016, v. 470, n. 2, p. 154, doi. 10.1134/S0012501616100043
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Large Electric Field-Enhanced-Hardness Effect in a SiO<sub>2</sub> Film.
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- Scientific Reports, 2014, p. 1, doi. 10.1038/srep04523
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DC-free Method to Evaluate Nanoscale Equivalent Oxide Thickness: Dark-Mode Scanning Capacitance Microscopy.
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- Nanomaterials (2079-4991), 2024, v. 14, n. 11, p. 934, doi. 10.3390/nano14110934
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Optical Properties in Mid-Infrared Range of Silicon Oxide Thin Films with Different Stoichiometries.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 20, p. 2749, doi. 10.3390/nano13202749
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Thickness Optimization of Charge Transport Layers on Perovskite Solar Cells for Aerospace Applications.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 12, p. 1848, doi. 10.3390/nano13121848
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Spectroscopic Properties of Si-nc in SiOx Films Using HFCVD.
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- Nanomaterials (2079-4991), 2020, v. 10, n. 7, p. 1415, doi. 10.3390/nano10071415
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Antibacterial Silicon Oxide Thin Films Doped with Zinc and Copper Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition.
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- Nanomaterials (2079-4991), 2019, v. 9, n. 2, p. 255, doi. 10.3390/nano9020255
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Subthreshold swing model using scale length for sub-10 nm junction-based double-gate MOSFETs.
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- International Journal of Electrical & Computer Engineering (2088-8708), 2020, v. 10, n. 3, p. 1747, doi. 10.11591/ijece.v10i2.pp1747-1754
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Subthreshold swing model using scale length for sub-10 nm junction-based double-gate MOSFETs.
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- International Journal of Electrical & Computer Engineering (2088-8708), 2020, v. 10, n. 2, p. 1747, doi. 10.11591/ijece.v10i2.pp1747-1754
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Flexible Fiber Conditioner for Fine Conditioning of Polishing Pad and its Evaluation in Chemical Mechanical Polishing: Verification of SUS-FFC on Soft Urethane Foam Pad and Proposal of PEEK-FFC.
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- International Journal of Automation Technology, 2021, v. 15, n. 6, p. 878, doi. 10.20965/ijat.2021.p0878
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Tuning the properties of Ge and Si nanocrystals based structures by tailoring the preparation conditions Review.
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- Digest Journal of Nanomaterials & Biostructures (DJNB), 2015, v. 10, n. 1, p. 59
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Silicon Oxide Barrier Films Deposited on Polycarbonate Substrates in Pulsed Plasmas.
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- Plasma Chemistry & Plasma Processing, 2020, v. 40, n. 2, p. 607, doi. 10.1007/s11090-019-10049-y
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Carbon nanotube guided formation of silicon oxide nanotrenches.
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- Nature Nanotechnology, 2007, v. 2, n. 3, p. 162, doi. 10.1038/nnano.2007.26
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Reasons of Crystallite Formation during the Self-Catalyzed GaAs Nanowire Growth.
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- Semiconductors, 2020, v. 54, n. 14, p. 1850, doi. 10.1134/S1063782620140213
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Structural Transformation of "Silica+Zn" Nanocomposite after Annealing in Oxidizing Atmosphere.
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- Semiconductors, 2018, v. 52, n. 16, p. 2111, doi. 10.1134/S1063782618160133
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Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO<sub>2</sub> Surface Films.
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- Semiconductors, 2018, v. 52, n. 13, p. 1696, doi. 10.1134/S1063782618130055
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Nanoparticle Formation in Zn<sup>+</sup> and O<sup>+</sup> Ion Sequentially Implanted SiO<sub>2</sub> Film.
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- Semiconductors, 2018, v. 52, n. 5, p. 645, doi. 10.1134/S106378261805024X
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Diffusion-Controlled growth of Ge nanocrystals in SiO films under conditions of ion synthesis at high pressure.
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- Semiconductors, 2017, v. 51, n. 10, p. 1364, doi. 10.1134/S1063782617100189
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Specific features of the ion-beam synthesis of Ge nanocrystals in SiO thin films.
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- Semiconductors, 2017, v. 51, n. 9, p. 1240, doi. 10.1134/S1063782617090226
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