Works matching DE "SILICON oxide films"

Results: 187

High‐Quality Thin Films of UiO‐66‐NH2 by Coordination Modulated Layer‐by‐Layer Liquid Phase Epitaxy.

Published in:

Chemistry - A European Journal, 2021, v. 27, n. 33, p. 8509, doi. 10.1002/chem.202005416

By:

Semrau, A. Lisa;
Fischer, Roland A.

Publication type:

Article

Structural and optical properties of thermally annealed TiO2-SiO2 binary thin films synthesized by sol-gel method.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 18, p. 16010, doi. 10.1007/s10854-018-9688-6

By:

Amin, Peshawa O.;
Kadhim, Asmaa J.;
Ameen, Majida A.;
Abdulwahid, Rebar T.

Publication type:

Article

Development of n-type microcrystalline SiO:H films and its application by innovative way to improve the performance of single junction µc-Si:H solar cell.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 8, p. 5746, doi. 10.1007/s10854-016-6246-y

By:

Das, Gourab;
Mandal, Sourav;
Dhar, Sukanta;
Bose, Sukanta;
Mukhopadhyay, Sumita;
Barua, A.;
Banerjee, Chandan

Publication type:

Article

Two-component waveguide SiO:TiO films fabricated by sol-gel technology for optoelectronic applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 5, p. 2733, doi. 10.1007/s10854-015-2750-8

By:

Karasiński, P.;
Tyszkiewicz, C.;
Maciaga, A.;
Kityk, I.;
Gondek, E.

Publication type:

Article

Influence of the PZT film thickness on the structure and electrical properties of the ZnO/PZT heterostructure.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 1, p. 160, doi. 10.1007/s10854-012-1004-2

By:

Meng, Xiangqin;
Yang, Chengtao;
Chen, Qingqing;
Yang, Jiancang

Publication type:

Article

Synthesis and properties of thin SiO-PO-CaO films.

Published in:

Inorganic Materials, 2014, v. 50, n. 8, p. 810, doi. 10.1134/S0020168514080056

By:

Borilo, L.;
Petrovskaya, T.;
Lyutova, E.

Publication type:

Article

Growth and Optical Parameters of ZnO Films on Macroporous Silicon Obtained by Atomic Layer Deposition.

Published in:

Applied Solar Energy (19349424), 2024, v. 60, n. 4, p. 609, doi. 10.3103/S0003701X24602448

By:

Turdaliev, T. K.;
Ashurov, R. Kh.;
Zokhidov, Kh. Kh.;
Abdurakhmanov, F. I.;
Ashurov, Kh. B.

Publication type:

Article

High‐Performance On‐Chip Electron Sources Based on Electroformed Silicon Oxide.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 7, p. 1, doi. 10.1002/aelm.202000268

By:

Yang, Wei;
Li, Zhiwei;
Wang, Yuwei;
Shen, Jun;
Wei, Dapeng;
Wei, Xianlong

Publication type:

Article

Low‐Temperature‐Processed SiOx One Diode–One Resistor Crossbar Array and Its Flexible Memory Application.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 6, p. 1, doi. 10.1002/aelm.201700665

By:

Yoon, Jongwon;
Ji, Yongsung;
Lee, Seoung‐Ki;
Hyon, Jinho;
Tour, James M.

Publication type:

Article

Fabrication of polycrystalline silicon films by Al-induced crystallization of silicon-rich oxide films.

Published in:

Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 9, p. 668, doi. 10.1002/pssr.201600198

By:

Yoon, Jong ‐ Hwan

Publication type:

Article

Mechanism for crystalline Si surface passivation by the combination of SiO2 tunnel oxide and µc-SiC:H thin film.

Published in:

Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 3, p. 233, doi. 10.1002/pssr.201510376

By:

Ding, Kaining;
Pomaska, Manuel;
Singh, Aryak;
LENtz, Florian;
Finger, Friedhelm;
Rau, Uwe

Publication type:

Article

High-performance a-Si1- xO x:H/c-Si heterojunction solar cells realized by the a-Si:H/a-Si1- xO x:H stack buffer layer.

Published in:

Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 4, p. 225, doi. 10.1002/pssr.201409546

By:

Zhang, He;
Nakada, Kazuyoshi;
Miyajima, Shinsuke;
Konagai, Makoto

Publication type:

Article

Structural and tribological properties of tungsten oxide thin film on a silicon substrate.

Published in:

Journal of Chemical Research, 2020, v. 44, n. 11/12, p. 744, doi. 10.1177/1747519820923100

By:

Ziakhodadadian, Siamak;
Ren, Tianhui

Publication type:

Article

Ammonia-sensing properties of acridine immobilized in SiO sol-gel films.

Published in:

Optics & Spectroscopy, 2013, v. 114, n. 3, p. 373, doi. 10.1134/S0030400X13030223

By:

Selivanov, N.;
Samsonova, L.;
Solodova, T.;
Kopylova, T.;
Tel'minov, E.

Publication type:

Article

In situ electroporation of mammalian cells through SiO2 thin film capacitive microelectrodes.

Published in:

Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-94620-8

By:

Maschietto, M.;
Dal Maschio, M.;
Girardi, S.;
Vassanelli, S.

Publication type:

Article

Photoinduced self-limited low-temperature growth of ultra-thin silicon-oxide films with water vapor.

Published in:

Applied Physics A: Materials Science & Processing, 2006, v. 85, n. 2, p. 145, doi. 10.1007/s00339-006-3683-0

By:

Patzner, P.;
Osipov, A. V.;
Hess, P.

Publication type:

Article

Interaction between the silyl and silylen centres in the deposits prepared by pulsed laser ablation of silicon monoxide and ammonia, methylamine and dimethylamine.

Published in:

Applied Physics A: Materials Science & Processing, 2005, v. 81, n. 5, p. 1019, doi. 10.1007/s00339-004-2902-9

By:

Dřínek, V.;
Vacek, K.;
Yuzhakov, G.;
Bastl, Z.

Publication type:

Article

Theoretical search for atomic-like states of silicon at the surface of thermally grown SiO2 films on silicon surfaces.

Published in:

Applied Physics A: Materials Science & Processing, 2005, v. 80, n. 8, p. 1617, doi. 10.1007/s00339-004-3142-8

By:

Cerofolini, G. F.;
Belanzoni, P.;
Giorgi, G.;
Sgamellotti, A.

Publication type:

Article

Atomic transport and chemical stability of nitrogen in ultrathin HfSiON gate dielectrics.

Published in:

Applied Physics A: Materials Science & Processing, 2005, v. 80, n. 5, p. 1045, doi. 10.1007/s00339-004-3037-8

By:

Driemeier, C.;
Bastos, K.P.;
Soares, G.V.;
Miotti, L.;
Pezzi, R.P.;
Baumvol, I.J.R.;
Punchaipetch, P.;
Pant, G.;
Gnade, B.E.;
Wallace, R.M.

Publication type:

Article

Size dependence of non-linear optical properties of SiO[sub 2] thin films containing InP nanocrystals.

Published in:

Applied Physics A: Materials Science & Processing, 2001, v. 73, n. 2, p. 183, doi. 10.1007/s003390000615

By:

Zheng, M.J.;
Zhang, L.D.;
Zhang, J.G.

Publication type:

Article

Defect reduction and surface passivation of SiO[sub 2] /Si by heat treatment with high-pressure H[sub 2] O vapor.

Published in:

Applied Physics A: Materials Science & Processing, 1999, v. 69, n. 2, p. 221, doi. 10.1007/s003390050993

By:

Sameshima, T.;
Sakamoto, K.;
Asada, K.

Publication type:

Article

Green/blue light emission and chemical feature of nanocrystalline silicon embedded in silicon-oxide thin film.

Published in:

Applied Physics A: Materials Science & Processing, 1997, v. 65, n. 2, p. 195, doi. 10.1007/s003390050565

By:

Zhu, M.;
Chen, G.;
Chen, P.

Publication type:

Article

Stabilization of silicon-based devices in ion-containing media using thin Al[sub 2] O[sub 3] platelets and MoS[sub 2] oriented thin films.

Published in:

Applied Physics A: Materials Science & Processing, 1996, v. 62, n. 1, p. 39, doi. 10.1007/BF01568085

By:

Miremadi, B. K.;
Morrison, S. R.;
Colbow, K.

Publication type:

Article

Synthesis of Low-Dielectric Silica Aerogel Films by Ambient Drying.

Published in:

Journal of the American Ceramic Society, 2001, v. 84, n. 2, p. 453, doi. 10.1111/j.1151-2916.2001.tb00677.x

By:

Kim, Gun S.;
Hyun, Sang H.;
Park, Hyung H.;
Cook, R. F.

Publication type:

Article

Monolayer Packing of Submicrometer Ceramic Spheres by Emploting a Langmuir-Blodgett Film of...

Published in:

Journal of the American Ceramic Society, 2001, v. 84, n. 2, p. 301, doi. 10.1111/j.1151-2916.2001.tb00654.x

By:

Shimizu, Yasuhiro;
Kawanabe, Kazuyuki;
Takao, Yuji;
Egashira, Makoto;
Brinker, C. J.

Publication type:

Article

Silicon Oxide Barrier Films Deposited on Polycarbonate Substrates in Pulsed Plasmas.

Published in:

Plasma Chemistry & Plasma Processing, 2020, v. 40, n. 2, p. 607, doi. 10.1007/s11090-019-10049-y

By:

Shafaei, Shaham;
Yang, Lanti;
Rudolph, Marcel;
Awakowicz, Peter

Publication type:

Article

Reasons of Crystallite Formation during the Self-Catalyzed GaAs Nanowire Growth.

Published in:

Semiconductors, 2020, v. 54, n. 14, p. 1850, doi. 10.1134/S1063782620140213

By:

Nastovjak, A. G.;
Shwartz, N. L.;
Emelyanov, E. A.;
Petrushkov, M. O.;
Vasev, A. V.;
Putyato, M. A.;
Preobrazhenskii, V. V.

Publication type:

Article

Structural Transformation of "Silica+Zn" Nanocomposite after Annealing in Oxidizing Atmosphere.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2111, doi. 10.1134/S1063782618160133

By:

Komarov, F. F.;
Makhavikou, M. A.;
Vlasukova, L. A.;
Milchanin, O. V.;
Skuratov, V. A.;
Vuuren, A. Janse;
Neetling, J. N.;
Parkhomenko, I. N.;
Żuk, J.

Publication type:

Article

Redistribution of Erbium and Oxygen Recoil Atoms and the Structure of Silicon Thin Surface Layers Formed by High-Dose Argon Implantation through Er and SiO2 Surface Films.

Published in:

Semiconductors, 2018, v. 52, n. 13, p. 1696, doi. 10.1134/S1063782618130055

By:

Feklistov, K. V.;
Cherkov, A. G.;
Popov, V. P.;
Fedina, L. I.

Publication type:

Article

Nanoparticle Formation in Zn+ and O+ Ion Sequentially Implanted SiO2 Film.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 645, doi. 10.1134/S106378261805024X

By:

Privezentsev, V. V.;
Makunin, A. V.;
Batrakov, A. A.;
Ksenich, S. V.;
Goryachev, A. V.

Publication type:

Article

Diffusion-Controlled growth of Ge nanocrystals in SiO films under conditions of ion synthesis at high pressure.

Published in:

Semiconductors, 2017, v. 51, n. 10, p. 1364, doi. 10.1134/S1063782617100189

By:

Tyschenko, I.;
Cherkov, A.

Publication type:

Article

Specific features of the ion-beam synthesis of Ge nanocrystals in SiO thin films.

Published in:

Semiconductors, 2017, v. 51, n. 9, p. 1240, doi. 10.1134/S1063782617090226

By:

Tyschenko, I.;
Cherkov, A.;
Volodin, V.;
Voelskow, M.

Publication type:

Article

Composition and optical properties of amorphous a-SiO:H films with silicon nanoclusters.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 212, doi. 10.1134/S1063782616020251

By:

Terekhov, V.;
Terukov, E.;
Undalov, Yu.;
Parinova, E.;
Spirin, D.;
Seredin, P.;
Minakov, D.;
Domashevskaya, E.

Publication type:

Article

An origin of orange (2 eV) photoluminescence in SiO films implanted with high Si-ion doses.

Published in:

Semiconductors, 2015, v. 49, n. 9, p. 1176, doi. 10.1134/S1063782615090250

By:

Tyschenko, I.

Publication type:

Article

Effect of catalytic surface modification on the gas sensitivity of SnO + 3% SiO films.

Published in:

Semiconductors, 2015, v. 49, n. 9, p. 1237, doi. 10.1134/S1063782615090249

By:

Rembeza, S.;
Rembeza, E.;
Svistova, T.;
Kosheleva, N.;
Al Tameemi, V.

Publication type:

Article

Effect of tin on the processes of silicon-nanocrystal formation in amorphous SiO thin-film matrices.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 73, doi. 10.1134/S1063782614010242

By:

Voitovych, V.;
Rudenko, R.;
Kolosiuk, A.;
Krasko, M.;
Juhimchuk, V.;
Voitovych, M.;
Ponomarov, S.;
Kraitchinskii, A.;
Povarchuk, V.;
Makara, V.

Publication type:

Article

Photoluminescence study of the structural evolution of amorphous and crystalline silicon nanoclusters during the thermal annealing of silicon suboxide films with different stoichiometry.

Published in:

Semiconductors, 2012, v. 46, n. 3, p. 354, doi. 10.1134/S1063782612030244

By:

Zhigunov, D.;
Shvydun, N.;
Emelyanov, A.;
Timoshenko, V.;
Kashkarov, P.;
Seminogov, V.

Publication type:

Article

Specific features and nature of the 890 nm photoluminescence band detected in SiO films after low-temperature annealing.

Published in:

Semiconductors, 2011, v. 45, n. 11, p. 1414, doi. 10.1134/S1063782611110273

By:

Vlasenko, N.;
Sopinskii, N.;
Gule, E.;
Manoilov, E.;
Oleksenko, P.;
Veligura, L.;
Mukhlyo, M.

Publication type:

Article

Charge spectroscopy of SiO layers with embedded silicon nanocrystals modified by irradiation with high-energy ions.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 582, doi. 10.1134/S1063782611050034

By:

Antonova, I.;
Smagulova, S.;
Neustroev, E.;
Skuratov, V.;
Jedrzejewski, J.;
Savir, E.;
Balberg, I.

Publication type:

Article

Erratum to: 'Electronic States on Silicon Surface after Deposition and Annealing of SiO Films'.

Published in:

2011

By:

Vlasenko, N.;
Oleksenko, P.;
Denisova, Z.;
Sopinskii, N.;
Veligura, L.;
Gule, E.;
Litvin, O.;
Mukhlyo, M.

Publication type:

Correction Notice

Electronic states on silicon surface after deposition and annealing of SiO films.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 587, doi. 10.1134/S1063782611050289

By:

Vlasenko, N.;
Oleksenko, P.;
Denisova, Z.;
Sopinskii, N.;
Veligura, L.;
Gule, E.;
Litvin, O.;
Mukhlyo, M.

Publication type:

Article

Formation and 'white' photoluminescence of nanoclusters in SiO films implanted with carbon ions.

Published in:

Semiconductors, 2010, v. 44, n. 11, p. 1450, doi. 10.1134/S106378261011014X

By:

Belov, A.;
Mikhaylov, A.;
Nikolitchev, D.;
Boryakov, A.;
Sidorin, A.;
Gratchev, A.;
Ershov, A.;
Tetelbaum, D.

Publication type:

Article

Layered structure of anodic SiO2 films doped with phosphorus or boron.

Published in:

Semiconductors, 2009, v. 43, n. 13, p. 1654, doi. 10.1134/S1063782609130077

By:

Mileshko, L.

Publication type:

Article

Coulomb Blockade of the Conductivity of SiOx Films Due to One-Electron Charging of a Silicon Quantum Dot in a Chain of Electronic States.

Published in:

Semiconductors, 2005, v. 39, n. 8, p. 910, doi. 10.1134/1.2010684

By:

Efremov, M. D.;
Kamaev, G. N.;
Volodin, V. A.;
Arzhannikova, S. A.;
Kachurin, G. A.;
Cherkova, S. G.;
Kretinin, A. V.;
Malyutina-Bronskaya, V. V.;
Marin, D. V.

Publication type:

Article

Radiative Recombination in Ge+-Implanted SiO2 Films Annealed under Hydrostatic Pressure.

Published in:

Semiconductors, 2004, v. 38, n. 7, p. 818, doi. 10.1134/1.1777607

By:

Tyschenko, I.E.;
Rebohle, L.

Publication type:

Article

Structural-Phase Transformations in SiOx Films in the Course of Vacuum Heat Treatment.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 97, doi. 10.1134/1.1538546

By:

Lisovskyy, I.P.;
Indutnyy, I.Z.;
Gnennyy, B.N.;
Lytvyn, P.M.;
Mazunov, D.O.;
Oberemok, A.S.;
Sopinskyy, N.V.;
Shepelyavyi, P.E.

Publication type:

Article

Synthesis of SiO-Coated Core-Shell ZnO Composites for Preparing High-Voltage Varistors.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 1, p. 409, doi. 10.1007/s11664-017-5781-5

By:

Qu, Xiao;
Yao, Da-Chuan;
Liu, Jin-Ran;
Wang, Mao-Hua;
Zhang, Han-Ping

Publication type:

Article

Optical and Compositional Properties of SiO x Films Deposited by HFCVD: Effect of the Hydrogen Flow.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 4, p. 2309, doi. 10.1007/s11664-016-5271-1

By:

Luna López, J.;
Vázquez Valerdi, D.;
Benítez Lara, A.;
García Salgado, G.;
Hernández-de la Luz, A.;
Morales Sánchez, A.;
Flores Gracia, F.;
Dominguez, M.

Publication type:

Article

Fabrication of Carrier-Doped Si Nanoarchitecture for Thermoelectric Material by Ultrathin SiO Film Technique.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 3, p. 1914, doi. 10.1007/s11664-015-4294-3

By:

Ueda, Tomohiro;
Sakane, Shunya;
Ishibe, Takafumi;
Watanabe, Kentaro;
Takeuchi, Shotaro;
Sakai, Akira;
Nakamura, Yoshiaki

Publication type:

Article

SiC Nitridation by NH Annealing and Its Effects in MOS Capacitors with Deposited SiO Films.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 8, p. 2823, doi. 10.1007/s11664-015-3757-x

By:

Pitthan, E.;
Gobbi, A.L.;
Boudinov, H.I.;
Stedile, F.C.

Publication type:

Article