Works matching DE "SILICON nitride"

Results: 2196

高熵改性氧化锆陶瓷相变与光吸收性能.

Published in:

Journal of Shanghai University / Shanghai Daxue Xuebao, 2025, v. 31, n. 1, p. 122, doi. 10.12066/j.issn.1007-2861.2542

By:

张燕;
彭雨晴;
张方舟;
王启帆;
宁立新;
李爱军

Publication type:

Article

Optimal Selection and Experimental Verification of Wide-Bandgap Semiconductor for Betavoltaic Battery.

Published in:

Nanomaterials (2079-4991), 2025, v. 15, n. 9, p. 635, doi. 10.3390/nano15090635

By:

Zhang, Jiachen;
Lv, Kunlun;
Yin, Yuan;
Gao, Yuqian;
Tian, Ye;
Han, Yuncheng;
Tang, Jun

Publication type:

Article

氮化硅基陶瓷材料微波烧结参数实验优化.

Published in:

China Mechanical Engineering, 2025, v. 36, n. 3, p. 435, doi. 10.3969/j.issn.l004-132X.2025.03.007

By:

徐伟伟;
张作轩;
朱松青;
殷增斌

Publication type:

Article

Silicon nitride porous ceramics prepared by sacrificial method.

Published in:

Ceramica, 2025, v. 71, p. 1, doi. 10.1590/DZOA4919

By:

Chiba, R.;
Carvalho, F. M. S.;
Guedes-Silva, C. C.

Publication type:

Article

Self-organized spatiotemporal quasi-phase-matching in microresonators.

Published in:

Nature Communications, 2025, v. 16, n. 1, p. 1, doi. 10.1038/s41467-025-59215-1

By:

Zhou, Ji;
Hu, Jianqi;
Clementi, Marco;
Yakar, Ozan;
Nitiss, Edgars;
Stroganov, Anton;
Brès, Camille-Sophie

Publication type:

Article

Sputter films: Targeting SiN with pure Si and an S-Gun.

Published in:

Solid State Technology, 2001, v. 44, n. 11, p. 26

By:

Vogler, Debra

Publication type:

Article

Solutions for the 100nm node with ultrathin silicon nitride gates.

Published in:

Solid State Technology, 2001, v. 44, n. 4, p. 75

By:

Levy, Sagy;
Boom, Robin;
Lam, James;
Kepten, Avishai

Publication type:

Article

A low-temperature solution for silicon nitride deposition.

Published in:

Solid State Technology, 2000, v. 43, n. 4, p. 79

By:

Laxman, Ravi K.;
Anderson, Timothy D.;
Mestemacher, John A.

Publication type:

Article

Microstructure and properties of CPED thermal protective ceramic coating toughened by ZrO2 nanorods on Al–Si alloy.

Published in:

Surface Engineering, 2021, v. 37, n. 8, p. 1043, doi. 10.1080/02670844.2021.1908738

By:

Wang, Ping;
Ma, Qun;
Chen, Xiaomin;
Zhang, Chunqing

Publication type:

Article

Tribological Behaviour of Plasma and HVOF-sprayed NiCrSiBFe Coatings.

Published in:

Surface Engineering, 2020, v. 36, n. 7, p. 745, doi. 10.1080/02670844.2020.1730062

By:

Rukhande, Sanjay W.;
Rathod, W. S.

Publication type:

Article

Delamination of diamond-like carbon films on rough Si3N4 surfaces.

Published in:

Surface Engineering, 2020, v. 36, n. 7, p. 770, doi. 10.1080/02670844.2019.1688015

By:

Shu, Kun;
Zhang, Chuanwei;
Zheng, Dezhi;
Gu, Le;
Wang, Liqin

Publication type:

Article

Rapid Thermal Process for Crystallization Silicon Nitride Films.

Published in:

Surface Engineering, 2020, v. 36, n. 5, p. 456, doi. 10.1080/02670844.2018.1564199

By:

Meziani, Samir;
Moussi, Aberrahmane;
Mahiou, Linda;
Antoni, Frederic;
Outemzabet, Ratiba

Publication type:

Article

Comparative study on structure and properties of ZnO thin films prepared by RF magnetron sputtering using pure metallic Zn target and ZnO ceramic target.

Published in:

Surface Engineering, 2020, v. 36, n. 1, p. 49, doi. 10.1080/02670844.2018.1555214

By:

Ye, Wei;
Fang, Kun

Publication type:

Article

Ultra-high-density silicon nanocone arrays with sharp tips by Ar+ sputtering at low temperature.

Published in:

Surface Engineering, 2019, v. 35, n. 1, p. 54, doi. 10.1080/02670844.2018.1454997

By:

Wang, Hongjun;
Li, Qintao;
Wu, Xiujuan

Publication type:

Article

Influences of different reinforcement particles on performances of electroless composites.

Published in:

Surface Engineering, 2017, v. 33, n. 5, p. 362, doi. 10.1080/02670844.2016.1230975

By:

Hu, J.;
Fang, L.;
Liao, X.-L.;
Shi, L.-T.

Publication type:

Article

Deposition of Ti-Si-N films on Al substrates by magnetron sputtering.

Published in:

Surface Engineering, 2013, v. 29, n. 10, p. 749, doi. 10.1179/1743294413Y.0000000178

By:

Pang, J.;
Bai, Y.;
Qin, F.;
Pan, L.;
Zhao, Y.;
Kang, R.

Publication type:

Article

Laser treatment of silicon at nitrogen ambient: thermal stress analysis.

Published in:

Surface Engineering, 2011, v. 27, n. 6, p. 436, doi. 10.1179/174329409X409495

By:

Yilbas, B S;
Arif, A F M;
Karatas, C

Publication type:

Article

Monitoring of plasma processing chamber using ion energy analyser and time series neural network.

Published in:

Surface Engineering, 2010, v. 26, n. 3, p. 224, doi. 10.1179/174329409X455449

By:

Kim, B.;
Kim, S.

Publication type:

Article

Study on nanomechanical and high temperature tribological behaviour of Ti2AlNb based alloys by plasma surface alloying.

Published in:

Surface Engineering, 2008, v. 24, n. 6, p. 464, doi. 10.1179/026708408X336373

By:

Wu, H. Y.;
Zhang, P. Z.;
Xu, Z.

Publication type:

Article

Prediction of radio frequency power effect on silicon nitride deposition using a genetic algorithm based neural network.

Published in:

Surface Engineering, 2006, v. 22, n. 1, p. 63, doi. 10.1179/174329406X84985

By:

Kim, B.;
Bae, J.;
Han, S. S.

Publication type:

Article

Tailored Si[sub 3]N[sub 4] Ceramic Substrates for CVD Diamond Coating.

Published in:

Surface Engineering, 2003, v. 19, n. 6, p. 410, doi. 10.1179/026708403225010136

By:

Amaral, M.;
Oliveira, F. J.;
Belmonte, M.;
Fernandes, A. J. S.;
Costa, F. M.;
Silva, R. F.

Publication type:

Article

The study on the high-temperature performances of a graphene MEMS pressure sensor.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 9, p. 1, doi. 10.1007/s10854-023-10211-5

By:

Liu, Daosen;
Wei, Shengsheng;
Liu, Chao;
Wang, Dejun

Publication type:

Article

Raman strain–shift measurements and prediction from first-principles in highly strained silicon.

Published in:

Journal of Materials Science: Materials in Electronics, 2023, v. 34, n. 5, p. 1, doi. 10.1007/s10854-022-09769-3

By:

Roisin, Nicolas;
Colla, Marie-Stéphane;
Raskin, Jean-Pierre;
Flandre, Denis

Publication type:

Article

In situ-grown ZnO particles on g-C3N4 layers: a direct Z-scheme-driven photocatalyst for the degradation of dye and pharmaceutical pollutants under solar irradiation.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 12, p. 9774, doi. 10.1007/s10854-022-07825-6

By:

Gayathri, K.;
Teja, Y. N.;
Prakash, R. Mithun;
Hossain, Md Shahadat;
Alsalme, Ali;
Sundaravadivel, E.;
Sakar, M.

Publication type:

Article

[Ca24Al28O64]4+:4e− electride ceramic realizes mechanical and electrical transport properties coordinated regulation via composite ZrO2.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 9, p. 6380, doi. 10.1007/s10854-022-07810-z

By:

Luo, Zhuang;
Ju, Shanshan;
Zhang, Xin;
Zhao, Weikang;
Liu, Fei;
Yin, Zhanqing;
Liu, Yanqin;
Lu, Qingmei;
Hu, Yanlin

Publication type:

Article

Crystal structure and microwave dielectric properties of Mg2+-Si4+ co-modified yttrium aluminum garnet ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 7, p. 4712, doi. 10.1007/s10854-021-07661-0

By:

Wu, Guofa;
Ma, Mingtao;
Li, Aihua;
Song, Kaixin;
Khesro, Amir;
Bafrooei, Hadi Barzegar;
Taheri-nassaj, Ehsan;
Luo, Shaojin;
Shi, Feng;
Sun, Shikuan;
Wang, Dawei

Publication type:

Article

The effect of B-site acceptor doping on the microstructure and electric properties of NaNbO3 ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 7, p. 4497, doi. 10.1007/s10854-021-07640-5

By:

Ye, Fen;
Jiang, Xiangping;
Huang, Xiaokun;
Zeng, Renfen;
Chen, Chao;
Nie, Xin;
Cheng, Hao

Publication type:

Article

Effects of excessive magnesium oxide and sintering regime on microstructure and dielectric properties of forsterite ceramics for millimeterwave dielectrics.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 6, p. 3129, doi. 10.1007/s10854-021-07515-9

By:

He, Guangming;
Li, Zhijun;
Dong, Yunan;
Wang, Guoshuai

Publication type:

Article

Lattice occupying sites and microwave dielectric properties of Mg2+–Si4+ co-doped MgxY3-xAl5-xSixO12 garnet typed ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 4, p. 2116, doi. 10.1007/s10854-021-07417-w

By:

Li, Chen;
Hou, Jiale;
Ye, Zijun;
Muhammad, Raz;
Li, Aihua;
Ma, Mingtao;
Wu, Guofa;
Song, Kaixin;
Zhou, Tao;
Mao, Minmin;
Liu, Bing;
Bafrooei, Hadi Barzegar;
Taheri-nassaj, Ehsan;
Luo, Shaojin;
Shi, Feng;
Sun, Shikuan;
Wang, Dawei

Publication type:

Article

Effect of B2O3 additive on the sintering temperature and microwave dielectric properties of Ba(Mg1/3Ta2/3)O3 ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 18, p. 23309, doi. 10.1007/s10854-021-06815-4

By:

Peng, Sen;
Zhang, Yu;
Tang, Jiejia;
Zeng, Wenfei;
Zhao, Chenglin

Publication type:

Article

The effect of Si3N4 on the thermal and dielectric properties of polytetrafluoroethylene/glass fiber composites.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 17, p. 21957, doi. 10.1007/s10854-021-06611-0

By:

Zhang, Chunyan;
Chen, Yaoyi;
Fang, Haolan;
Tian, Zhongqing;
Meng, Fancheng;
Lin, Huixing

Publication type:

Article

Integration of silicon nitride waveguide in Ge-on-insulator substrates for monolithic solutions in optoelectronics.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 5, p. 6133, doi. 10.1007/s10854-021-05331-9

By:

Xiong, Wenjuan;
Wang, Guilei;
Du, Yong;
Lin, Hongxiao;
Zhao, Xuewei;
Yu, Jiahan;
Kong, Zhenzhen;
Dong, Yan;
Jiang, Haojie;
Tao, Yang;
Li, Junfeng;
Wang, Wenwu;
Radamson, Henry H.

Publication type:

Article

SiN-based platform toward monolithic integration in photonics and electronics.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 1, p. 1, doi. 10.1007/s10854-020-04909-z

By:

Xiong, Wenjuan;
Wang, Guilei;
Li, Junfeng;
Zhao, Chao;
Wang, Wenwu;
Radamson, Henry H.

Publication type:

Article

Study of hydrogenation processes in radiation-resistant nitride ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 14, p. 11227, doi. 10.1007/s10854-020-03671-6

By:

Kozlovskiy, A. L.;
Zdorovets, M. V.

Publication type:

Article

Stressor SiNx contact etch stop layer (CESL) technology and its application in nano-scale transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 13, p. 10078, doi. 10.1007/s10854-020-03553-x

By:

Xu, Qiang;
Xiong, Wenjuan;
Wang, Guilei;
Ye, Tianchun

Publication type:

Article

Electrical characterization of silicon nitride interlayer-based MIS diode.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 12, p. 9888, doi. 10.1007/s10854-020-03533-1

By:

Buyukbas-Ulusan, A.;
Tataroglu, A.

Publication type:

Article

Dielectric and microwave absorption properties of fluoride-doped MWCNT/Si3N4 composite.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 4, p. 2918, doi. 10.1007/s10854-019-02836-2

By:

Saleem, Adil;
Zhang, Yujun;
Gong, Hongyu;
Majeed, Muhammad K.;
Lin, Xiao;
Jing, Jie;
Sheng, Mingming;
Zhao, Cuncai

Publication type:

Article

The formation of an optically functional nano-lens array by substrate surface treatment.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 3, p. 2331, doi. 10.1007/s10854-019-02765-0

By:

Park, Young-Sam;
Cho, Doo-Hee

Publication type:

Article

Alternate lanthanum oxide/silicon oxynitride-based gate stack performance enhancement due to ultrathin oxynitride interfacial layer for CMOS applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 3, p. 1986, doi. 10.1007/s10854-019-02718-7

By:

Gupta, Prachi;
Soni, Mahesh;
Sharma, Satinder K.

Publication type:

Article

Preparation of novel lead-free Ag-doped glass frit for polycrystalline silicon solar cells by sol-gel method.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 2, p. 1461, doi. 10.1007/s10854-019-02660-8

By:

Zhou, Bo;
Cui, Chunting;
Ma, Shenghua;
Bai, Jintao;
Wang, Hui

Publication type:

Article

Sputtering of aluminium nitride (002) film on cubic silicon carbide on silicon (100) substrate: influences of substrate temperature and deposition power.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 1, p. 239, doi. 10.1007/s10854-019-02480-w

By:

Iqbal, A.;
Walker, G.;
Hold, L.;
Fernandes, A.;
Lacopi, A.;
Mohd-Yasin, F.

Publication type:

Article

SiNx films and membranes for photonic and MEMS applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 1, p. 90, doi. 10.1007/s10854-019-01164-9

By:

Xiong, Wenjuan;
Jiang, Haojie;
Li, Tingting;
Zhang, Peng;
Xu, Qing;
Zhao, Xuewei;
Wang, Guilei;
Liu, Yaodong;
Luo, Ying;
Li, Zhihua;
Li, Junfeng;
Yu, Jinzhong;
Chao, Zhao;
Wang, Wenwu;
Radamson, Henry H.

Publication type:

Article

Processing, phase analysis and microwave dielectric properties of Sr5−xBixTi1+xNb4−xO17 (x = 4, 3) ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 20, p. 18432, doi. 10.1007/s10854-019-02197-w

By:

Manan, Abdul;
Khan, Arshad;
Ullah, Atta;
Ahmad, Arbab Safeer;
Wazir, Arshad Hussain;
Iqbal, Javed;
Ullah, Mati

Publication type:

Article

Enhanced photoelectrochemical cathodic protection performance of g-C3N4 caused by the co-modification with N defects and C deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 16, p. 15267, doi. 10.1007/s10854-019-01899-5

By:

Zhang, Qingji;
Jing, Jiangping;
Chen, Zhuoyuan;
Sun, Mengmeng;
Li, Jiarun;
Li, Yan;
Xu, Likun

Publication type:

Article

Avoidance of boron rich layer formation in the industrial boron spin-on dopant diffused n-type silicon solar cell without additional oxidation process.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 23, p. 20081, doi. 10.1007/s10854-018-0139-1

By:

Yang, Ning;
Li, Shizheng;
Yang, Jinlin;
Li, Hongbo;
Ye, Xiaojun;
Liu, Cui;
Yuan, Xiao

Publication type:

Article

Reduction of leakage current at the SiNx/GaN interface in GaN Schottky diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 22, p. 19353, doi. 10.1007/s10854-018-0064-3

By:

Kolli, Sowmya;
Sunkara, Mahendra;
Alphenaar, Bruce

Publication type:

Article

Thermal-cycling-induced surface roughening and structural change of a metal layer bonded to silicon nitride by active metal brazing.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 16, p. 12168, doi. 10.1007/s10854-017-7031-2

By:

Fukuda, Shinji;
Shimada, Kazuhiko;
Izu, Noriya;
Miyazaki, Hiroyuki;
Iwakiri, Shoji;
Hirao, Kiyoshi

Publication type:

Article

Crack generation in electroless nickel plating layers on copper-metallized silicon nitride substrates during thermal cycling.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 11, p. 8278, doi. 10.1007/s10854-017-6541-2

By:

Fukuda, Shinji;
Shimada, Kazuhiko;
Izu, Noriya;
Miyazaki, Hiroyuki;
Hirao, Kiyoshi;
Iwakiri, Shoji

Publication type:

Article

Erratum to: Size-controlled Si quantum dots embedded in B-doped SiN/SiN superlatice for Si quantum dot solar cells.

Published in:

2017

By:

Chen, Xiaobo;
Yang, Wen;
Yang, Peizhi;
Yuan, Junbao;
Zhao, Fei;
Hao, Jiabo;
Tang, Yu

Publication type:

Erratum

Improvements of epitaxial quality and stress state of GaN grown on SiC by in situ SiN interlayer.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 10, p. 10003, doi. 10.1007/s10854-016-5071-7

By:

Huang, Zhen;
Zhang, Yuantao;
Deng, Gaoqiang;
Li, Baozhu;
Cui, Shuang;
Liang, Hongwei;
Chang, Yuchun;
Song, Junfeng;
Zhang, Baolin;
Du, Guotong

Publication type:

Article