Works matching DE "SILICON germanium integrated circuits"

Results: 65

A Two-Module Linear Regulator with 3.9–10 V Input, 2.5 V Output, and 500 mA Load.

Published in:

Electronics (2079-9292), 2019, v. 8, n. 10, p. 1143, doi. 10.3390/electronics8101143

By:

Duan, Quanzhen;
Li, Weidong;
Huang, Shengming;
Ding, Yuemin;
Meng, Zhen;
Shi, Kai

Publication type:

Article

Strain-induced enhancement of plasma dispersion effect and free-carrier absorption in SiGe optical modulators.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep04683

By:

Younghyun Kim;
Mitsuru Takenaka;
Takenori Osada;
Masahiko Hata;
Shinichi Takagi

Publication type:

Article

Thermal expansion of bulk nanostructured n-type SiGe nanocomposite from 300 to 1400 K.

Published in:

Journal of Materials Science, 2017, v. 52, n. 2, p. 921, doi. 10.1007/s10853-016-0387-5

By:

Pavlova, Lydia;
Shtern, Yury;
Kirilenko, Elena

Publication type:

Article

An Ultrabroadband Generator of Chaotic Microwave Oscillations with an Additional Nonlinear Circuit.

Published in:

Technical Physics Letters, 2019, v. 45, n. 12, p. 1216, doi. 10.1134/S1063785019120095

By:

Maksimov, N. A.

Publication type:

Article

A Model of a 30–50 GHz IC Chaotic Oscillation Source.

Published in:

Technical Physics Letters, 2019, v. 45, n. 12, p. 1171, doi. 10.1134/S1063785019120046

By:

Efremova, E. V.

Publication type:

Article

Model of a SiGe 130-nm 10- to 30-GHz Chaotic Self-Oscillating System.

Published in:

Technical Physics Letters, 2018, v. 44, n. 5, p. 378, doi. 10.1134/S106378501805005X

By:

Efremova, E. V.

Publication type:

Article

Design of integrated optical Receiver DC-20 GHz based on SiGe BiCMOS technology.

Published in:

Dilemas Contemporáneos: Educación, Política y Valores, 2019, v. 6, p. 1

By:

Koryakovtsev, Artyom S.;
Kokolov, Andrey A.;
Pomazanov, Alexey V.;
Sheyerman, Feodor I.;
Babak, Leonid I.

Publication type:

Article

Performance Evaluation of Strained-Engineered Embedded-SiGe Source-Drain and SiGe Channel FinFETs.

Published in:

Journal of Active & Passive Electronic Devices, 2018, v. 13, n. 2/3, p. 209

By:

MAITI, C. K.;
DASH, T. P.;
DEY, S.

Publication type:

Article

Analytical Modeling of Threshold Voltage of Stacked Triple-Material-Gate (TMG) Strained-Si (s-Si) on Silicon-Germanium-on-Insulator (SGOI) MOSFETs.

Published in:

Journal of Active & Passive Electronic Devices, 2014, v. 9, n. 2/3, p. 235

By:

SANTRA, ABIRMOYA;
KUMAR, MIRGENDER;
DUBEY, SARVESH;
JIT, SATYABRATA;
TIWARI, PRAMOD KUMAR

Publication type:

Article

Effect of Germanium Doping on the Production and Evolution of Divacancy Complexes in Neutron Irradiated Czochralski Silicon.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 9, p. 5019, doi. 10.1007/s11664-018-6266-x

By:

Dong, Peng;
Yang, Ping;
Yu, Xuegong;
Chen, Lin;
Ma, Yao;
Li, Mo;
Dai, Gang;
Zhang, Jian

Publication type:

Article

Impact of Channel, Stress-Relaxed Buffer, and S/D Si1-xGex Stressor on the Performance of 7-nm FinFET CMOS Design with the Implementation of Stress Engineering.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 4, p. 2337, doi. 10.1007/s11664-017-6058-8

By:

OTHMAN, NURUL AIDA FARHANA;
MUHAMAD HATTA, SHARIFAH FATMADIANA WAN;
SOIN, NORHAYATI

Publication type:

Article

High-Performance Silicon-Germanium-Based Thermoelectric Modules for Gas Exhaust Energy Scavenging.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 6, p. 2192, doi. 10.1007/s11664-015-3761-1

By:

Romanjek, K.;
Vesin, S.;
Aixala, L.;
Baffie, T.;
Bernard-Granger, G.;
Dufourcq, J.

Publication type:

Article

Modeling and Optimization of Thermoelements by a Combined Analytical and Numerical Method.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 2, p. 404, doi. 10.1007/s11664-013-2860-0

By:

Xu, Shaohui;
Chen, Qiang;
Zhu, Yiping;
Wang, Lianwei;
Zheng, Lirong;
Chu, Paul

Publication type:

Article

Thermal Conductivity Measurement Methods for SiGe Thermoelectric Materials.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 7, p. 2376, doi. 10.1007/s11664-013-2505-3

By:

Llin, L.;
Samarelli, A.;
Zhang, Y.;
Weaver, J.;
Dobson, P.;
Cecchi, S.;
Chrastina, D.;
Isella, G.;
Etzelstorfer, T.;
Stangl, J.;
Gubler, E.;
Paul, D.

Publication type:

Article

SiC trench MOSFET with heterojunction diode for low switching loss and high short-circuit capability.

Published in:

IET Power Electronics (Wiley-Blackwell), 2019, v. 12, n. 8, p. 1981, doi. 10.1049/iet-pel.2019.0035

By:

Junjie An;
Shengdong Hu

Publication type:

Article

The effect of YSi2 nanoinclusion on the thermoelectric properties of p-type SiGe alloy.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 10, p. n/a, doi. 10.1002/pssa.201700235

By:

Wongprakarn, Suphagrid;
Pinitsoontorn, Supree;
Tanusilp, Sora‐at;
Kurosaki, Ken

Publication type:

Article

Studies on mechanical properties of thermoelectric materials by nanoindentation.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 10, p. 2191, doi. 10.1002/pssa.201532045

By:

He, Ran;
Gahlawat, Sonika;
Guo, Chuanfei;
Chen, Shuo;
Dahal, Tulashi;
Zhang, Hao;
Liu, Weishu;
Zhang, Qian;
Chere, Eyob;
White, Kenneth;
Ren, Zhifeng

Publication type:

Article

Atomistic simulation of phonon and alloy limited hole mobility in Si1- xGe x nanowires.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 903, doi. 10.1002/pssr.201307124

By:

Mehrotra, Saumitra;
Long, Pengyu;
Povolotskyi, Michael;
Klimeck, Gerhard

Publication type:

Article

A Low-Power, High-Gain, and Low-Noise 802.11a Down-Conversion Mixer in 0.35-m SiGe Bi-CMOS Technology.

Published in:

Journal of Circuits, Systems & Computers, 2017, v. 26, n. 9, p. -1, doi. 10.1142/S0218126617501341

By:

Chen, Jun-Da;
Wang, Song-Hao

Publication type:

Article

A LOW POWER PUSH-PUSH VCO USING MULTI-COUPLED LC TANKS.

Published in:

Journal of Circuits, Systems & Computers, 2013, v. 22, n. 10, p. 1, doi. 10.1142/S0218126613400355

By:

NAGARAJAN, MAHALINGAM;
KAIXUE MA;
KIAT SENG YEO;
WEI MENG LIM

Publication type:

Article

Photodetectors: Ultrahigh Stability 3D TI Bi2Se3/MoO3 Thin Film Heterojunction Infrared Photodetector at Optical Communication Waveband (Adv. Funct. Mater. 12/2020).

Published in:

Advanced Functional Materials, 2020, v. 30, n. 12, p. 1, doi. 10.1002/adfm.201909659

By:

Yang, Ming;
Han, Qi;
Liu, Xianchao;
Han, Jiayue;
Zhao, Yafei;
He, Liang;
Gou, Jun;
Wu, Zhiming;
Wang, Xinran;
Wang, Jun

Publication type:

Article

Compact on-chip millimetre wave bandpass filters with meandered grounding resonator in 0.13-µm (Bi)-CMOS technology.

Published in:

IET Microwaves, Antennas & Propagation (Wiley-Blackwell), 2020, v. 14, n. 6, p. 559, doi. 10.1049/iet-map.2019.0192

By:

Cong Luo;
Sai-Wai Wong;
Rui-Sen Chen;
Xi Zhu;
Yang Yang;
Jing-Yu Lin;
Zhi-Hong Tu;
Quan Xue

Publication type:

Article

SiGe BiCMOS high-gain and wideband differential intermediate frequency amplifier for W-band passive imaging single-chip receivers.

Published in:

IET Microwaves, Antennas & Propagation (Wiley-Blackwell), 2015, v. 9, n. 6, p. 569, doi. 10.1049/iet-map.2014.0511

By:

Bint Reyaz, Shakila;
Malmqvist, Robert;
Gustafsson, Andreas;
Kaynak, Mehmet

Publication type:

Article

Generation of Dynamic Chaos in a Range of 10-30 GHz.

Published in:

Journal of Communications Technology & Electronics, 2018, v. 63, n. 4, p. 367, doi. 10.1134/S1064226918040046

By:

Efremova, E. V.

Publication type:

Article

Excitation power-independent photoluminescence of inverted quantum hut structures embedded in SiGe superlattice.

Published in:

Applied Physics A: Materials Science & Processing, 2015, v. 119, n. 1, p. 55, doi. 10.1007/s00339-014-8901-6

By:

Sharma, Manjula;
Sanyal, Milan;
Katiyar, Ajit;
Ray, Samit

Publication type:

Article

A 256-TES Array for the Detection of CMB B-Mode Polarisation.

Published in:

Journal of Low Temperature Physics, 2016, v. 184, n. 3/4, p. 793, doi. 10.1007/s10909-016-1586-9

By:

Perbost, C.;
Marnieros, S.;
Bélier, B.;
Piat, M.;
Prêle, D.;
Voisin, F.;
Decourcelle, T.

Publication type:

Article

Plasmonic Enhancement of the Photoluminescence in Hybrid Structures with SiGe Quantum Dots and Ag Nanoislands.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2149, doi. 10.1134/S1063782618160406

By:

Zinovyev, V. A.;
Zinovieva, A. F.;
Katsuba, A. V.;
Smagina, Zh. V.;
Dvurechenskii, A. V.;
Borodavchenko, O. M.;
Zhivulko, V. D.;
Mudryi, A. V.

Publication type:

Article

Ion Synthesis: Si-Ge Quantum Dots.

Published in:

Semiconductors, 2018, v. 52, n. 5, p. 625, doi. 10.1134/S1063782618050081

By:

Gerasimenko, N. N.;
Balakleyskiy, N. S.;
Volokhovskiy, A. D.;
Smirnov, D. I.;
Zaporozhan, O. A.

Publication type:

Article

Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties.

Published in:

Semiconductors, 2016, v. 50, n. 2, p. 249, doi. 10.1134/S1063782616020111

By:

Kalyadin, A.;
Sobolev, N.;
Strel'chuk, A.;
Aruev, P.;
Zabrodskiy, V.;
Shek, E.

Publication type:

Article

Nucleation and growth of ordered groups of SiGe quantum dots.

Published in:

Semiconductors, 2015, v. 49, n. 2, p. 149, doi. 10.1134/S1063782615020256

By:

Zinovyev, V.;
Dvurechenskii, A.;
Kuchinskaya, P.;
Armbrister, V.;
Teys, S.;
Shklyaev, A.;
Mudryi, A.

Publication type:

Article

Structural and electronic properties of SiGe binary semiconducting alloys under the effect of temperature and pressure.

Published in:

Semiconductors, 2013, v. 47, n. 10, p. 1283, doi. 10.1134/S1063782613100084

By:

Degheidy, A.;
Elkenany, E.

Publication type:

Article

Radiation effects in Si-Ge quantum size structure (Review).

Published in:

Semiconductors, 2013, v. 47, n. 2, p. 217, doi. 10.1134/S1063782613020188

By:

Sobolev, N.

Publication type:

Article

A 6-Bit 0.13 μm SiGe BiCMOS Digital Step Attenuator with Low Phase Variation for K-Band Applications.

Published in:

Electronics (2079-9292), 2018, v. 7, n. 5, p. 74, doi. 10.3390/electronics7050074

By:

Sarfraz, Muhammad Masood;
Ullah, Farman;
Wang, Minghua;
Zhang, Haiying;
Liu, Yu

Publication type:

Article

The total-dose-effects of gamma and proton irradiations on high-voltage silicon–germanium heterojunction bipolar transistors.

Published in:

Radiation Effects & Defects in Solids: Incorporating Plasma Techniques & Plasma Phenomena, 2013, v. 168, n. 4, p. 253, doi. 10.1080/10420150.2013.763805

By:

Sun, Ya-Bin;
Fu, Jun;
Xu, Jun;
Wang, Yu-Dong;
Yang, Ji;
Zhou, Wei;
Zhang, Wei;
Cui, Jie;
Li, Gao-Qing;
Liu, Zhi-Hong;
Wei, Su-Min;
Wang, Feng;
Guan, Feng-Ping;
Li, Peng-Zhan;
Zhang, Tian-Jue

Publication type:

Article

Spectral mapping of thermal conductivity through nanoscale ballistic transport.

Published in:

Nature Nanotechnology, 2015, v. 10, n. 8, p. 701, doi. 10.1038/nnano.2015.109

By:

Hu, Yongjie;
Zeng, Lingping;
Minnich, Austin J.;
Dresselhaus, Mildred S.;
Chen, Gang

Publication type:

Article

Design of a 0.13μm SiGe Limiting Amplifier with 14.6 THz Gain-Bandwidth-Product.

Published in:

Advances in Radio Science, 2017, v. 15, p. 115, doi. 10.5194/ars-15-115-2017

By:

Sehoon Park;
Xuan-Quang Du;
Grözing, Markus;
Berroth, Manfred

Publication type:

Article

An ab initio study of the interaction of a single Li atom with single-walled SiGe (6,6) nanotubes and consequences of Jahn-Teller effect.

Published in:

Journal of Nanoparticle Research, 2014, v. 16, n. 3, p. 1, doi. 10.1007/s11051-014-2318-1

By:

Wanaguru, Prabath;
Ray, Asok

Publication type:

Article

Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region.

Published in:

Active & Passive Electronic Components, 2016, p. 1, doi. 10.1155/2016/8506507

By:

Lee, Chie-In;
Lin, Yan-Ting;
Lin, Wei-Cheng

Publication type:

Article

Active Metamaterial Transmission Line with Gain in SiGe BiCMOS Technology.

Published in:

Applied Computational Electromagnetics Society Journal, 2016, v. 31, n. 5, p. 551

By:

Zhou, C. X.;
Yihu Li;
Xiong, Y. Z.;
Wu, W.

Publication type:

Article

Analytical Study of Substrate Parasitic Effects in Common-Base and Common-Emitter SiGe HBT Amplifiers.

Published in:

Journal of Microwaves, Optoelectronics & Electromagnetic Applications, 2013, v. 12, n. 1, p. 217, doi. 10.1590/s2179-10742013000100017

By:

Murty, Neti V. L. Narasimha;
Rao, M. Hemalata

Publication type:

Article

4-Bit Ka Band SiGe BiCMOS Digital Step Attenuator.

Published in:

Progress in Electromagnetics Research C, 2017, v. 74, p. 31, doi. 10.2528/pierc17030802

By:

Sarfraz, Muhammad Masood;
Yu Liu;
Ullah, Farman;
Minghua Wang;
Zhiqiang Li;
Haiying Zhang

Publication type:

Article

Performance of a Composite Thermoelectric Generator with Different Arrangements of SiGe, BiTe and PbTe under Different Configurations.

Published in:

Entropy, 2015, v. 17, n. 11, p. 7387, doi. 10.3390/e17117387

By:

Vargas-Almeida, Alexander;
Olivares-Robles, Miguel Angel;
Lavielle, Federico Méndez

Publication type:

Article

Estimations of phonon-induced decoherence in silicon-germanium triple quantum dots.

Published in:

Quantum Information Processing, 2014, v. 13, n. 8, p. 1893, doi. 10.1007/s11128-014-0780-4

By:

Vasiliev, Alexander;
Fedichkin, Leonid

Publication type:

Article

Edge illuminated SiGe heterojunction phototransistor for RoF applications.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 23, p. 1906, doi. 10.1049/el.2015.2448

By:

Tegegne, Z. G.;
Viana, C.;
Polleux, J. L.;
Grzeskowiak, M.;
Richalot, E.

Publication type:

Article

Hybrid photo-receiver based on SiGe heterojunction photo-transistor for low-cost 60 GHz intermediate-frequency radio-over-fibre applications.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 8, p. 640, doi. 10.1049/el.2015.0062

By:

Viana, C.;
Tegegne, Z. G.;
Rosales, M.;
Polleux, J. L.;
Algani, C.;
Lecocq, V.;
Lyszyk, C.;
Denet, S.

Publication type:

Article

ERRATUM: BASE COMPOSITION EFFECTS STUDY ON NBR CURRENT AND CURRENT GAIN IN SiGe HBT.

Published in:

2013

By:

DAVOODI, HOSSEIN;
KAATUZIAN, HASSAN

Publication type:

Erratum

Breakdown Voltage Reduction Analysis with Adopting Dual Channel Vertical Strained SiGe Impact Ionization MOSFET (VESIMOS).

Published in:

International Journal of Simulation: Systems, Science & Technology, 2014, v. 15, n. 2, p. 40, doi. 10.5013/IJSSST.a.15.02.06

By:

Saad, Ismail;
Bun Seng, C.;
Mohd Zuhir, H.;
Nurmin, B.;
Khairul, A. M.;
Ghosh, Bablu;
Ismail, Razali;
Hashim, U.

Publication type:

Article

In-Depth Design and Simulation Analysis of Vertical Strained Impact Ionization MOSFET (VESIMOS).

Published in:

International Journal of Simulation: Systems, Science & Technology, 2014, v. 15, n. 2, p. 32, doi. 10.5013/IJSSST.a.15.02.05

By:

Saad, Ismail;
Mohd Divya Pogaku;
Zuhir, H.;
Bun Seng, C.;
Bolong, N.

Publication type:

Article

SILICENE: SILICON CONQUERS THE 2D WORLD.

Published in:

Europhysics News, 2016, v. 47, n. 1, p. 17, doi. 10.1051/epn/2016101

By:

Le Lay, Guy;
Salomon, Eric;
Angot, Thierry

Publication type:

Article

Tungsten Dichalcogenide Nanoflake/InGaZnO Thin‐Film Heterojunction for Photodetector, Inverter, and AC Rectifier Circuits.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 5, p. 1, doi. 10.1002/aelm.202000026

By:

Lee, Silah;
Lee, Han Sol;
Yu, Sanghyuck;
Park, Ji Hoon;
Bae, Heesun;
Im, Seongil

Publication type:

Article