Works matching DE "SILICON diodes"

Results: 323

Direct Growth of Nanographene on Silicon with Thin Oxide Layer for High-Performance Nanographene-Oxide-Silicon Diodes.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 48, p. 7613, doi. 10.1002/adfm.201402099

By:

Zhang, Qichong;
Wang, Xiaojuan;
Li, Dong;
Zhang, Zengxing

Publication type:

Article

Effect of amorphous SiC layer on electrical and optical properties of Al/a-SiC/c-Si Schottky diode for optoelectronic applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 15, p. 20598, doi. 10.1007/s10854-021-06570-6

By:

Barbouche, M.;
Benabderrahmane Zaghouani, R.;
Ben Ammar, N. E.;
Aglieri, V.;
Nasser, H.;
Turan, R.;
Ezzaouia, H.

Publication type:

Article

Investigation of electrical and photovoltaic properties of Au/n-Si Schottky diode with BOD-Z-EN interlayer.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 9, p. 12513, doi. 10.1007/s10854-021-05886-7

By:

Tezcan, Ali Osman;
Eymur, Serkan;
Taşcı, Enis;
Emrullahoğlu, Mustafa;
Tuğluoğlu, Nihat

Publication type:

Article

The determination of the temperature and voltage dependence of the main device parameters of Au/7%Gr-doped PVA/n-GaAs-type Schottky Diode (SD).

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 20, p. 17147, doi. 10.1007/s10854-020-03799-5

By:

Evcin Baydilli, E.;
Altındal, Ş.;
Tecimer, H.;
Kaymaz, A.;
Uslu Tecimer, H.

Publication type:

Article

Reducing the effects of mismatch between zinc oxide and silicon by silane plasma modification.

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 9, p. 1621, doi. 10.1007/s10854-012-0639-3

By:

Lin, Chiung;
Chen, Yi

Publication type:

Article

Sulfonated polyaniline/n-type silicon junctions.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 2, p. 123, doi. 10.1007/s10854-008-9645-x

By:

da Silva, Wilson J.;
Hümmelgen, Ivo A.;
Mello, Regina M. Q.

Publication type:

Article

Coupling characteristics of laser diodes to high numerical aperture thermally expanded core fibers.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 59, doi. 10.1007/s10854-007-9437-8

By:

Kliros, George S.;
Divari, Paraskevi C.

Publication type:

Article

Exciplex kinetics in nanocrystal organic light-emitting diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 10, doi. 10.1007/s10854-007-9420-4

By:

Kohary, Krisztian

Publication type:

Article

Electrical characterization of 4H–SiC Schottky diodes with a RuO2 and a RuWO x Schottky contacts.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 783, doi. 10.1007/s10854-007-9409-z

By:

Buc, Dalibor;
Stuchlikova, Lubica;
Harmatha, Ladislav;
Hotovy, Ivan

Publication type:

Article

Multiple-response surface optimization of IMCs layer in Au–Sn laser transmission bonding process.

Published in:

International Journal of Advanced Manufacturing Technology, 2024, v. 135, n. 7/8, p. 3649, doi. 10.1007/s00170-024-14633-1

By:

Khunjun, Narttakarn;
Sirivongpaisal, Nikorn;
Rodchom, Panuwat;
Deeying, Jakawat

Publication type:

Article

Power loss model and efficiency analysis of grid-connected seven-switch boost-type photovoltaic current source inverter using two power switches configurations.

Published in:

Electrical Engineering, 2023, v. 105, n. 5, p. 2607, doi. 10.1007/s00202-023-01840-4

By:

Ezzeddine, Kawther;
Hamouda, Mahmoud;
Belaid, Mohamed A.;
Kanaan, Hadi Y.;
Al-Haddad, Kamal

Publication type:

Article

Observational Results of the ChangE-1 Solar X-Ray Monitor.

Published in:

Solar Physics, 2014, v. 289, n. 5, p. 1597, doi. 10.1007/s11207-013-0411-8

By:

Cui, X.;
Wang, H.;
Peng, W.;
Zhang, C.;
Liang, X.;
Wang, J.;
Gao, M.;
Yang, J.;
Cao, X.;
Zhang, J.;
Wu, M.;
Chang, J.;
Sun, H.;
OuYang, Z.;
Zhou, Y.;
Li, C.

Publication type:

Article

Energy-Dependent Timing of Thermal Emission in Solar Flares.

Published in:

Solar Physics, 2011, v. 270, n. 1, p. 137, doi. 10.1007/s11207-011-9754-1

By:

Jain, Rajmal;
Awasthi, Arun;
Rajpurohit, Arvind;
Aschwanden, Markus

Publication type:

Article

The silicon chameleon.

Published in:

Nature, 1993, v. 365, n. 6448, p. 695, doi. 10.1038/365695a0

By:

Canham, Leigh

Publication type:

Article

Experimental Determination of Transmittance of Porous Cerium Dioxide Media in the Spectral Range of 300-1,100 nm.

Published in:

Experimental Heat Transfer, 2011, v. 24, n. 4, p. 285, doi. 10.1080/08916152.2010.542876

By:

Liang, Z.;
Chueh, W.C.;
Ganesan, K.;
Haile, S.M.;
Lipiński, W.

Publication type:

Article

Non-volatile electrically programmable integrated photonics with a 5-bit operation.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-39180-3

By:

Chen, Rui;
Fang, Zhuoran;
Perez, Christopher;
Miller, Forrest;
Kumari, Khushboo;
Saxena, Abhi;
Zheng, Jiajiu;
Geiger, Sarah J.;
Goodson, Kenneth E.;
Majumdar, Arka

Publication type:

Article

Flexible Large-Area Graphene Films of 50–600 nm Thickness with High Carrier Mobility.

Published in:

Nano-Micro Letters, 2023, v. 15, n. 1, p. 1, doi. 10.1007/s40820-023-01032-6

By:

Luo, Shiyu;
Peng, Li;
Xie, Yangsu;
Cao, Xiaoxue;
Wang, Xiao;
Liu, Xiaoting;
Chen, Tingting;
Han, Zhanpo;
Fan, Peidong;
Sun, Haiyan;
Shen, Ying;
Guo, Fan;
Xia, Yuxing;
Li, Kaiwen;
Ming, Xin;
Gao, Chao

Publication type:

Article

Influence of the metallic contact surface area on the low-frequency noises of metal-semiconductor contacts.

Published in:

Armenian Journal of Physics, 2015, v. 8, n. 1, p. 30

By:

KHONDKARYAN, H. D.

Publication type:

Article

An Investigation on Quantum Dot Superlattice (QDSL) Diode.

Published in:

International Journal of High Speed Electronics & Systems, 2014, v. 23, n. 1/2, p. -1, doi. 10.1142/S0129156414200043

By:

Chan, Pik-Yiu;
Lingalugari, Murali;
Heller, Evan;
Jain, Faquir

Publication type:

Article

SILICON CARBIDE SCHOTTKY BARRIER DIODE.

Published in:

International Journal of High Speed Electronics & Systems, 2005, v. 15, n. 4, p. 821, doi. 10.1142/S0129156405003430

By:

Zhao, Jian H.;
Kuang Sheng;
Lebron-Velilla, Ramon C.

Publication type:

Article

Applications of an amorphous silicon-based area detector for high-resolution, high-sensitivity and fast time-resolved pair distribution function measurements.

Published in:

2007

By:

Chupas, Peter J.;
Chapman, Karena W.;
Lee, Peter L.

Publication type:

Other

The GLAaS algorithm for portal dosimetry and quality assurance of RapidArc, an intensity modulated rotational therapy.

Published in:

Radiation Oncology, 2008, v. 3, p. 1, doi. 10.1186/1748-717X-3-24

By:

Nicolini, Giorgia;
Vanetti, Eugenio;
Clivio, Alessandro;
Fogliata, Antonella;
Korreman, Stine;
Bocanek, Jiri;
Cozzi, Luca

Publication type:

Article

Investigation of Silicon Defects Parameters in Electron Irradiated Diodes.

Published in:

Electronics & Electrical Engineering, 2007, n. 76, p. 13

By:

Bobrovs, V.;
Porins, J.;
Ivanovs, G.

Publication type:

Article

Optical fibre liquid sensor for cryogenic propellant mass measurement.

Published in:

Electronics Letters (Wiley-Blackwell), 2019, v. 55, n. 5, p. 278, doi. 10.1049/el.2018.7341

By:

Xingqiang Chi;
Xuan Ke;
Wei Xu

Publication type:

Article

The Effects of Optical Power of Semiconductor Laser on the Characteristics of Si-diode in an Exposed Device.

Published in:

Iraqi Journal of Science, 2021, v. 62, n. 10, p. 3545, doi. 10.24996/ijs.2021.62.10.13

By:

Mohammad, Musab S.;
Rasool, Raad A.;
Jassim, Fathi M.

Publication type:

Article

Barrier Height and Tunneling Current in Schottky Diodes with Embedded Layers of Quantum Dots.

Published in:

JETP Letters, 2002, v. 75, n. 2, p. 102, doi. 10.1134/1.1466486

By:

Yakimov, A. I.;
Dvurechenskiı, A. V.;
Nikiforov, A. I.;
Chaıkovskiı, S. V.

Publication type:

Article

Assessment of Human Gingival Fibroblast Proliferation after Laser Stimulation In Vitro Using Different Laser Types and Wavelengths (1064, 980, 635, 450, and 405 nm)—Preliminary Report.

Published in:

Journal of Personalized Medicine, 2021, v. 11, n. 2, p. 98, doi. 10.3390/jpm11020098

By:

Sterczała, Barbara;
Grzech-Leśniak, Kinga;
Michel, Olga;
Trzeciakowski, Witold;
Dominiak, Marzena;
Jurczyszyn, Kamil;
Bailey, Susan M

Publication type:

Article

Gain Coefficient Comparison between Silicon and InP Laser Diode Substrate.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 9, p. 1, doi. 10.1002/pssa.202300677

By:

Periyanayagam, Gandhi Kallarasan;
Shimomura, Kazuhiko

Publication type:

Article

The Role of Si Self‐interstitial Atoms in the Formation of Electrically Active Defects in Reverse‐Biased Silicon n+–p Diodes upon Irradiation with Alpha Particles.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 23, p. 1, doi. 10.1002/pssa.202100104

By:

Aharodnikau, Dzmitriy A.;
Lastovskii, Stanislau B.;
Shpakovski, Sergei V.;
Markevich, Vladimir P.;
Halsall, Matthew P.;
Peaker, Anthony R.

Publication type:

Article

Monolithic Integrated AlGaN/GaN Power Converter Topologies on High‐Voltage AlN/GaN Superlattice Buffer.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 3, p. 1, doi. 10.1002/pssa.202000404

By:

Moench, Stefan;
Müller, Stefan;
Reiner, Richard;
Waltereit, Patrick;
Czap, Heiko;
Basler, Michael;
Hückelheim, Jan;
Kirste, Lutz;
Kallfass, Ingmar;
Quay, Rüdiger;
Ambacher, Oliver

Publication type:

Article

Semi‐Polar InGaN‐Based Green Light‐Emitting Diodes Grown on Silicon.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900654

By:

Shen, Shuoheng;
Zhao, Xuanming;
Yu, Xiang;
Zhu, Chenqi;
Bai, Jie;
Wang, Tao

Publication type:

Article

Tunable Organic Polymer/Inorganic Silicon Diode Using an Ionic Liquid Gel Gate Dielectric.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 20, p. N.PAG, doi. 10.1002/pssa.201900358

By:

Rijos, Luis M.;
Pinto, Nicholas J.

Publication type:

Article

Photon counting arrays for astrophysics.

Published in:

Journal of Modern Optics, 2007, v. 54, n. 2/3, p. 163, doi. 10.1080/09500340600742320

By:

Zappa, F.;
Tisa, S.;
Cova, S.;
Maccagnani, P.;
Saletti, R.;
Roncella, R.;
Baronti, F.;
Calia, D. Bonaccini;
Silber, A.;
Bonanno, G.;
Belluso, M.

Publication type:

Article

SPAD arrays and micro-optics: towards a real single photon spectrometer.

Published in:

Journal of Modern Optics, 2007, v. 54, n. 2/3, p. 199, doi. 10.1080/09500340600769901

By:

Finocchiaro, P.;
Campisi, A.;
Cosentino, L.;
Pappalardo, A.;
Musumeci, F.;
Privitera, S.;
Scordino, A.;
Tudisco, S.;
Fallica, G.;
Sanfilippo, D.;
Mazzillo, M.;
Piazza, A.;
Van Erps, J.;
Van Overmeire, S.;
Vervaeke, M.;
Volckaerts, B.;
Vynck, P.;
Hermanne, A.;
Thienpont, H.;
Lombardo, S.

Publication type:

Article

Monolithic silicon matrix detector with 50 μm photon counting pixels.

Published in:

Journal of Modern Optics, 2007, v. 54, n. 2/3, p. 213, doi. 10.1080/09500340600790121

By:

Restelli, Alessandro;
Rech, Ivan;
Maccagnani, Piera;
Ghioni, Massimo;
Cova, Sergio

Publication type:

Article

High-rate photon counting and picosecond timing with silicon-SPAD based compact detector modules.

Published in:

Journal of Modern Optics, 2007, v. 54, n. 2/3, p. 225, doi. 10.1080/09500340600763698

By:

Giudice, A.;
Ghioni, M.;
Biasi, R.;
Zappa, F.;
Cova, S.;
Maccagnani, P.;
Gulinatti, A.

Publication type:

Article

Single photon avalanche diodes (SPADs) for 1.5 μm photon counting applications.

Published in:

Journal of Modern Optics, 2007, v. 54, n. 2/3, p. 283, doi. 10.1080/09500340600792291

By:

Itzler, M. A.;
Ben-Michael, r.;
Hsu, C.-F.;
Slomkowski, K.;
Tosi, A.;
Cova, S.;
Zappa, F.;
Ispasoiu, R.

Publication type:

Article

Photon counting timing uniformity-unique feature of the silicon avalanche photodiodes K14.

Published in:

Journal of Modern Optics, 2007, v. 54, n. 2/3, p. 141, doi. 10.1080/09500340600791814

By:

Prochazka, I.;
Kral, L.;
Hamal, K.;
Sopko, B.

Publication type:

Article

Single photon counting module for space applications.

Published in:

Journal of Modern Optics, 2007, v. 54, n. 2/3, p. 151, doi. 10.1080/09500340600791756

By:

Prochazka, I.;
Hamal, K.;
Kral, L.

Publication type:

Article

Characterization of novel active area silicon avalanche photodiodes operating in the Geiger mode.

Published in:

Journal of Modern Optics, 2004, v. 51, n. 9/10, p. 1323, doi. 10.1080/09500340410001674420

By:

Taylor, D. M.;
Jackson, J. C.;
Morrison, A. P.;
Mathewson, A.;
Rarity, J. G.

Publication type:

Article

Space-qualified silicon avalanche-photodiode single-photon-counting modules.

Published in:

Journal of Modern Optics, 2004, v. 51, n. 9/10, p. 1333, doi. 10.1080/09500340410001677085

By:

Xiaoli Sun;
Krainak, Michael A.;
Abshire, James B.;
Spinhirne, James D.;
Trottier, Claude;
Davies, Murray;
Dautet, Henri;
Allan, Graham R.;
Lukemire, Alan T.;
Vandiver, James C.

Publication type:

Article

High-rate quantum key distribution at short wavelength: performance analysis and evaluation of silicon single photon avalanche diodes.

Published in:

Journal of Modern Optics, 2003, v. 50, n. 14, p. 2251, doi. 10.1080/09500340308234577

By:

Ghioni, Massimo;
Giudice, Andrea;
Cova, Sergio;
Zappa, Franco

Publication type:

Article

Simulation of Tm 3+ -doped silica and Er 3+ -doped fluorozirconate fibre lasers.

Published in:

Journal of Modern Optics, 2002, v. 49, n. 10, p. 1763, doi. 10.1080/09500340210121570

By:

El-Sherif, Ashraf F.;
King, Terence A.

Publication type:

Article

X-RAY SPECTROSCOPY OF KAONIC ATOMS AT DAΦNE.

Published in:

International Journal of Modern Physics A: Particles & Fields; Gravitation; Cosmology; Nuclear Physics, 2011, v. 26, n. 3/4, p. 432

By:

VIDAL, A. ROMERO;
BAZZI, M.;
BEER, G.;
BOMBELLI, L.;
BRAGADIREANU, A. M.;
CARGNELLI, M.;
CORRADI, G.;
CURCEANU (PETRASCU), C.;
D'UFFIZI, A.;
FIORINI, C.;
FRIZZI, T.;
GHIO, F.;
GIROLAMI, B.;
GUARALDO, C.;
HAYANO, R. S.;
ILIESCU, M.;
ISHIWATARI, T.;
IWASAKI, M.;
KIENLE, P.;
SANDRI, P. LEVI

Publication type:

Article

STATUS AND PLANS OF EXPERIMENT E17 AT J-PARC.

Published in:

International Journal of Modern Physics A: Particles & Fields; Gravitation; Cosmology; Nuclear Physics, 2011, v. 26, n. 3/4, p. 604, doi. 10.1142/S0217751X11052177

By:

WUENSCHEK, B. K.;
BHANG, H.;
CARGNELLI, M.;
CHOI, S.;
CURCEANU, C.;
DOCE, O. VAZQUEZ;
ENOMOTO, S.;
FUJIOKA, H.;
FUJIWARA, Y.;
GUARALDO, C.;
HASHIMOTO, T.;
HAYANO, R. S.;
HIRAIWA, T.;
IIO, M.;
ISHIMOTO, S.;
ISHIWATARI, T.;
ITAHASHI, K.;
IWASAKI, M.;
KOU, H.;
KIENLE, P.

Publication type:

Article

KAONIC HELIUM MEASUREMENTS IN THE SIDDHARTA EXPERIMENT.

Published in:

International Journal of Modern Physics A: Particles & Fields; Gravitation; Cosmology; Nuclear Physics, 2011, v. 26, n. 3/4, p. 601

By:

SIRGHI, D. L.;
BAZZI, M.;
BEER, G.;
BOMBELLI, L.;
BRAGADIREANU, A. M.;
CARGNELLI, M.;
CORRADI, G.;
CURCEANU (PETRASCU), C.;
D'UFFIZI, A.;
FIORINI, C.;
FRIZZI, T.;
GHIO, F.;
GIROLAMI, B.;
GUARALDO, C.;
HAYANO, R. S.;
ILIESCU, M.;
ISHIWATARI, T.;
IWASAKI, M.;
KIENLE, P.;
SANDRI, P. LEVI

Publication type:

Article

DESIGN, PREPRODUCTION, AND PERFORMANCE OF THE CDF RUN IIB SILICON DETECTOR.

Published in:

International Journal of Modern Physics A: Particles & Fields; Gravitation; Cosmology; Nuclear Physics, 2005, v. 20, n. 16, p. 3811

By:

Lujan, Paul

Publication type:

Article

Lateral PIN Photodiode with Germanium and Silicon Layer on SOI Wafers.

Published in:

Journal of Integrated Circuits & Systems, 2023, v. 18, n. 2, p. 1, doi. 10.29292/jics.v18i2.746

By:

Silva, Fábio A.;
Doria, Rodrigo T.;
Simoen, E.;
Andrade, M. G. C.

Publication type:

Article

Study of p–i–n Diode Structures on High-Resistivity Silicon Substrates Using Deep-Level Transient Spectroscopy.

Published in:

Semiconductors, 2024, v. 58, n. 13, p. 1049, doi. 10.1134/S1063782624700039

By:

Grigoreva, T. V.;
Golubkov, S. A.;
Boiko, A. N.

Publication type:

Article

Silicon Light-Emitting Diodes with Dislocation-Related Luminescence Fabricated with Participation of Oxygen Precipitates.

Published in:

Semiconductors, 2023, v. 57, n. 7, p. 343, doi. 10.1134/S1063782623090178

By:

Sobolev, N. A.;
Kalyadin, A. E.;
Shtel'makh, K. F.;
Aruev, P. N.;
Zabrodskiy, V. V.;
Shek, E. I.

Publication type:

Article