Works matching DE "SILICON diodes"
Results: 306
Study of p–i–n Diode Structures on High-Resistivity Silicon Substrates Using Deep-Level Transient Spectroscopy.
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- Semiconductors, 2024, v. 58, n. 13, p. 1049, doi. 10.1134/S1063782624700039
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Effect of device parameters on improving the quantum efficiency of a lateral Si p–i–n photodetector.
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- Optical & Quantum Electronics, 2020, v. 52, n. 8, p. N.PAG, doi. 10.1007/s11082-020-02490-7
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Direct actinide assay with surface passivated silicon diodes.
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- Journal of Radioanalytical & Nuclear Chemistry, 2005, v. 263, n. 2, p. 295, doi. 10.1007/s10967-005-0052-y
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- Article
Chemically enhanced alpha-energy spectroscopy in liquids.
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- Journal of Radioanalytical & Nuclear Chemistry, 2005, v. 263, n. 2, p. 291, doi. 10.1007/s10967-005-0051-z
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- Article
Stone-Cold Low Temperature Cathodoluminescence Spectrometry of Quartz (SiO2).
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- Microscopy & Microanalysis, 2019, p. 2014, doi. 10.1017/S1431927618010553
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Challenges to Quantitative Multivariate Statistical Analysis of Atomic-Resolution X-Ray Spectral.
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- Microscopy & Microanalysis, 2012, v. 18, n. 4, p. 691, doi. 10.1017/S1431927612001201
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- Article
EDS Measurements of X-Ray Intensity at WDS Precision and Accuracy Using a Silicon Drift Detector.
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- Microscopy & Microanalysis, 2012, v. 18, n. 4, p. 892, doi. 10.1017/S1431927612001109
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Characterization of a Microcalorimeter in comparison to Silicon Drift Detectors.
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- 2012
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- Abstract
Modeling High Count Rate EDS Analysis and its Effect on Analytical Uncertainties and Detection Limits.
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- 2012
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- Abstract
EDS Spectrometry at Low Accelerating Voltages: Pushing the Boundaries of Nano- and Light Element Analysis with Enhanced SDD Technology.
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- 2012
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Challenges of Quantification with Large Solid Angle SDDs in the AEM.
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- 2012
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- Abstract
New Results from SDD Detectors with Minimized Input Capacitance.
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- 2012
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Trace Element Analysis and Sum Peaks in EDS.
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- 2012
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- Abstract
Multiple-response surface optimization of IMCs layer in Au–Sn laser transmission bonding process.
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- International Journal of Advanced Manufacturing Technology, 2024, v. 135, n. 7/8, p. 3649, doi. 10.1007/s00170-024-14633-1
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- Article
Power loss model and efficiency analysis of grid-connected seven-switch boost-type photovoltaic current source inverter using two power switches configurations.
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- Electrical Engineering, 2023, v. 105, n. 5, p. 2607, doi. 10.1007/s00202-023-01840-4
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- Article
Efficient silicon light-emitting diodes.
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- Nature, 2001, v. 412, n. 6849, p. 805, doi. 10.1038/35090539
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- Article
Technology Computer-Aided Design and Study of Prototypes of a Silicon Zener Diode.
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- Journal of Engineering Physics & Thermophysics, 2014, v. 87, n. 4, p. 997, doi. 10.1007/s10891-014-1097-y
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- Article
Optical fibre liquid sensor for cryogenic propellant mass measurement.
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- Electronics Letters (Wiley-Blackwell), 2019, v. 55, n. 5, p. 278, doi. 10.1049/el.2018.7341
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- Article
High-Voltage Fast Recovery Avalanche Diodes on Silicon Carbide.
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- Journal of Communications Technology & Electronics, 2020, v. 65, n. 8, p. 956, doi. 10.1134/S1064226920070050
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- Article
Photodetection Properties of ZnO/Si Heterojunction Diode: A Simulation Study.
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- IETE Technical Review, 2017, v. 34, n. 1, p. 83, doi. 10.1080/02564602.2016.1145558
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Non-volatile electrically programmable integrated photonics with a 5-bit operation.
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- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-39180-3
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- Article
Ferroelectric liquid crystal over silicon devices.
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- Liquid Crystals Today, 2012, v. 21, n. 2, p. 34, doi. 10.1080/1358314X.2012.669274
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- Article
Ordered Mesostructured CdS Nanowire Arrays with Rectifying Properties.
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- Nanoscale Research Letters, 2009, v. 4, n. 5, p. 414, doi. 10.1007/s11671-008-9247-9
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- Article
Silicon Light-Emitting Diodes with Dislocation-Related Luminescence Fabricated with Participation of Oxygen Precipitates.
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- Semiconductors, 2023, v. 57, n. 7, p. 343, doi. 10.1134/S1063782623090178
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- Article
Temperature Dependence of Dislocation-Related Electroluminescence in Silicon Light-Emitting Diodes Containing Oxygen Precipitates.
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- Semiconductors, 2023, v. 57, n. 3, p. 172, doi. 10.1134/S1063782623060179
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- Article
Formation of Planar Field-Emission Devices Based on Carbon Nanotubes on Co–Nb–N–(O) Alloy.
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- Semiconductors, 2022, v. 56, n. 13, p. 493, doi. 10.1134/S1063782622130164
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- Article
Erratum to: Characteristics of Schottky Rectifier Diodes Based on Silicon Carbide at Elevated Temperatures.
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- 2021
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- Correction Notice
TCAD Simulation of High-Voltage 4H-SiC Diodes with an Edge Semi-Insulating Region.
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- Semiconductors, 2021, v. 55, n. 2, p. 256, doi. 10.1134/S1063782621020159
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On the Photoresponse Kinetics and Amplitude of Silicon Photoelectric Multipliers.
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- Semiconductors, 2020, v. 54, n. 13, p. 1796, doi. 10.1134/S1063782620130023
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- Article
Characteristics of Schottky Rectifier Diodes Based on Silicon Carbide at Elevated Temperatures.
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- Semiconductors, 2020, v. 54, n. 12, p. 1624, doi. 10.1134/S1063782620120374
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- Article
Effect of Submicron Structural Parameters on the Performance of a Multi-Diode CMOS Compatible Silicon Avalanche Photodetector.
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- Semiconductors, 2020, v. 54, n. 9, p. 1032, doi. 10.1134/S1063782620090183
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- Article
Silicon Light-Emitting Diodes with Luminescence from (113) Defects.
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- Semiconductors, 2020, v. 54, n. 6, p. 687, doi. 10.1134/S1063782620060081
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Investigation into the Radiation Hardness of Photodiodes Based on Silicon-on-Sapphire Structures.
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- Semiconductors, 2019, v. 53, n. 3, p. 368, doi. 10.1134/S1063782619030084
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Characteristics of microSilicon diode detector for electron beam dosimetry.
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- Journal of Radiation Research, 2021, v. 62, n. 6, p. 1130, doi. 10.1093/jrr/rrab085
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Characterization of a microSilicon diode detector for small-field photon beam dosimetry.
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- Journal of Radiation Research, 2020, v. 61, n. 3, p. 410, doi. 10.1093/jrr/rraa010
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SILICON DIODE AS AN ALPHA PARTICLE DETECTOR AND SPECTROMETER FOR DIRECT FIELD MEASUREMENTS.
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- Radiation Protection Dosimetry, 2016, v. 170, n. 1-4, p. 247, doi. 10.1093/rpd/ncw089
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- Article
PLASTIC SCINTILLATOR FOR RADIATION DOSIMETRY.
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- Radiation Protection Dosimetry, 2016, v. 170, n. 1-4, p. 187, doi. 10.1093/rpd/ncv454
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Fluence measurement of fast neutron fields with a highly efficient recoil proton telescope using active pixel sensors.
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- Radiation Protection Dosimetry, 2014, v. 161, n. 1-4, p. 41, doi. 10.1093/rpd/nct276
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- Article
EURADOS IC2012N: EURADOS 2012 intercomparison for whole-body neutron dosimetry.
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- Radiation Protection Dosimetry, 2014, v. 161, n. 1-4, p. 73, doi. 10.1093/rpd/nct295
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- Article
Planar silicon structure in application to the modulation of infrared radiation.
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- Optica Applicata, 2011, v. 41, n. 2, p. 333
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- Article
Low Loss Configuration for Integrated PIN-Schottky Limiters.
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- Microwave Journal, 2014, p. 40
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- Article
Nanosphere Strikes Gold.
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- Bio-IT World, 2004, v. 3, n. 10, p. 26
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- Article
Effect of amorphous SiC layer on electrical and optical properties of Al/a-SiC/c-Si Schottky diode for optoelectronic applications.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 15, p. 20598, doi. 10.1007/s10854-021-06570-6
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- Article
Investigation of electrical and photovoltaic properties of Au/n-Si Schottky diode with BOD-Z-EN interlayer.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 9, p. 12513, doi. 10.1007/s10854-021-05886-7
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- Article
The determination of the temperature and voltage dependence of the main device parameters of Au/7%Gr-doped PVA/n-GaAs-type Schottky Diode (SD).
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- Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 20, p. 17147, doi. 10.1007/s10854-020-03799-5
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- Article
Small SRS photon field profile dosimetry performed using a PinPoint air ion chamber, a diamond detector, a novel silicon-diode array (DOSI), and polymer gel dosimetry. Analysis and intercomparison.
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- Medical Physics, 2008, v. 35, n. 10, p. 4640, doi. 10.1118/1.2977829
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- Article
Testing the GLAaS algorithm for dose measurements on low- and high-energy photon beams using an amorphous silicon portal imager.
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- Medical Physics, 2008, v. 35, n. 2, p. 464, doi. 10.1118/1.2828182
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- Article
SphinX soft X-ray spectrophotometer: Science objectives, design and performance.
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- Solar System Research, 2011, v. 45, n. 3, p. 189, doi. 10.1134/S0038094611020067
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- Article
Photovoltaic Characteristics of LEDs with Two in-Series p–n Junctions.
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- Technical Physics Letters, 2021, v. 47, n. 1, p. 42, doi. 10.1134/S1063785021010107
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- Article
Parameters of silicon carbide diode avalanche shapers for the picosecond range.
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- Technical Physics Letters, 2016, v. 42, n. 1, p. 43, doi. 10.1134/S1063785016010090
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- Article