Works matching DE "SILICON carbide films"

Results: 70

Super-smooth processing of CVD-SiC using combined electrolytic in-process dressing grinding and fixed softer-than-diamond abrasive grinding.

Published in:

International Journal of Advanced Manufacturing Technology, 2025, v. 139, n. 5/6, p. 2803, doi. 10.1007/s00170-025-16041-5

By:

Ao, Xuemei;
Kurokawa, Syuhei;
Hayashi, Terutake;
Ohmori, Hitoshi;
Jia, Chen

Publication type:

Article

Nanoscale Single-Crystal Silicon Carbide on Silicon and Unique Properties of This Material.

Published in:

Inorganic Materials, 2021, v. 57, n. 13, p. 1319, doi. 10.1134/S0020168521130021

By:

Kukushkin, S. A.;
Osipov, A. V.

Publication type:

Article

Cross-Sectional Carrier Lifetime Profiling and Deep Level Monitoring in Silicon Carbide Films Exhibiting Variable Carbon Vacancy Concentrations.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 10, p. 1, doi. 10.1002/pssa.202200449

By:

Galeckas, Augustinas;
Karsthof, Robert;
Gana, Kingsly;
Kok, Angela;
Etzelmüller Bathen, Marianne;
Vines, Lasse;
Kuznetsov, Andrej

Publication type:

Article

Effect of the Surface Activation Parameter on the Fabrication Process of 4H–SiC Film on SiO2/Si Using the Crystal‐Ion‐Slicing Technique.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 3, p. 1, doi. 10.1002/pssa.202200028

By:

Zhu, Dailei;
Luo, Wenbo;
Wang, Kaibiao;
Xu, Jintao;
Huang, Shitian;
Shuai, Yao;
Wu, Chuangui;
Zhang, Wanli

Publication type:

Article

Strain Effect in Highly‐Doped n‐Type 3C‐SiC‐on‐Glass Substrate for Mechanical Sensors and Mobility Enhancement (Phys. Status Solidi A 24∕2018).

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 24, p. N.PAG, doi. 10.1002/pssa.201870054

By:

Phan, Hoang‐Phuong;
Nguyen, Tuan‐Khoa;
Dinh, Toan;
Cheng, Han‐Hao;
Mu, Fengwen;
Iacopi, Alan;
Hold, Leonie;
Dao, Dzung Viet;
Suga, Tadatomo;
Senesky, Debbie G.;
Nguyen, Nam‐Trung

Publication type:

Article

Evaluations of crystal defects of 3C-SiC.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 5, p. 1125, doi. 10.1002/pssa.201532675

By:

Sambonsuge, Shota;
Ito, Shun;
Jiao, Sai;
Nagasawa, Hiroyuki;
Fukidome, Hirokazu;
Filimonov, Sergey N.;
Suemitsu, Maki

Publication type:

Article

Neutron-irradiation effect on the electrical characteristics of amorphous silicon carbide and nitrogen-doped silicon carbide films prepared by PECVD technology.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 12, p. 2756, doi. 10.1002/pssa.201330248

By:

Huran, Jozef;
Boháček, Pavol;
Shvetsov, Valery N.;
Kobzev, Alexander P.;
Kleinová, Angela;
Borzakov, Sergey B.;
Hrubčín, Ladislav;
Sekáčová, Mária;
Balalykin, Nikolay I.

Publication type:

Article

Improving the Back Surface Field on an Amorphous Silicon Carbide Thin‐Film Photocathode for Solar Water Splitting.

Published in:

ChemSusChem, 2018, v. 11, n. 11, p. 1797, doi. 10.1002/cssc.201800782

By:

Perez‐Rodriguez, Paula;
Raventos, Andrea Mangel;
Procel, Paul;
Isabella, Olindo;
Zeman, Miro;
Smets, Arno H. M.;
Cardenas‐Morcoso, Drialys;
Gimenez, Sixto;
Digdaya, Ibadillah A.;
Smith, Wilson A.

Publication type:

Article

Effect of SiC Nanowires on the Mechanical and Oxidation Protective Ability of SiC Coating for C/C Composites.

Published in:

Journal of the American Ceramic Society, 2012, v. 95, n. 2, p. 739, doi. 10.1111/j.1551-2916.2011.04979.x

By:

Yanhui, Chu;
Qiangang, Fu;
Hejun, Li;
Xiaohong, Shi;
Kezhi, Li;
Xue, Wen;
Gunan, Shang;
Jacobson, N.

Publication type:

Article

Highly crystalline silicon carbide thin films grown at low substrate temperature by HWCVD technique.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 3, p. 1381, doi. 10.1007/s10854-014-2550-6

By:

Jha, Himanshu;
Agarwal, Pratima

Publication type:

Article

Graphene Film Growth on Silicon Carbide by Hot Filament Chemical Vapor Deposition.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 17, p. 3033, doi. 10.3390/nano12173033

By:

Rodríguez-Villanueva, Sandra;
Mendoza, Frank;
Weiner, Brad R.;
Morell, Gerardo

Publication type:

Article

Temperature Influence on the Deposition of Nitrogen-Doped Silicon Carbide Polycrystalline Films.

Published in:

Coatings (2079-6412), 2025, v. 15, n. 1, p. 106, doi. 10.3390/coatings15010106

By:

Gavalas, Michail;
Greenhorn, Scott;
Mercier, Frédéric;
Zekentes, Konstantinos

Publication type:

Article

On the Importance of Combined Scratch/Acoustic Emission Test Evaluation: SiC and SiCN Thin Films Case Study.

Published in:

Coatings (2079-6412), 2018, v. 8, n. 5, p. 196, doi. 10.3390/coatings8050196

By:

Tomastik, Jan;
Ctvrtlik, Radim;
Drab, Martin;
Manak, Jan

Publication type:

Article

Cold-Sprayed AZ91D Coating and SiC/AZ91D Composite Coatings.

Published in:

Coatings (2079-6412), 2018, v. 8, n. 4, p. 122, doi. 10.3390/coatings8040122

By:

Wang, Yingying;
Normand, Bernard;
Suo, Xinkun;
Planche, Marie-Pierre;
Liao, Hanlin;
Tang, Junlei

Publication type:

Article

Degradation Mechanism of Pressure-Assisted Sintered Silver by Thermal Shock Test.

Published in:

Energies (19961073), 2021, v. 14, n. 17, p. 5532, doi. 10.3390/en14175532

By:

Wakamoto, Keisuke;
Otsuka, Takukazu;
Nakahara, Ken;
Namazu, Takahiro

Publication type:

Article

Top-Down Formation of Biocompatible SiC Nanotubes.

Published in:

Semiconductors, 2024, v. 58, n. 3, p. 209, doi. 10.1134/S1063782624030035

By:

Bouravleuv, A. D.;
Kazakin, A. N.;
Nashchekina, Yu. A.;
Nashchekin, A. V.;
Ubyyvovk, E. V.;
Astrahanceva, V. A.;
Osipov, A. V.;
Svyatec, G. V.;
Kukushkin, S. A.

Publication type:

Article

Phase Transitions in Silicon-Carbide Epitaxial Layers Grown on a Silicon Substrate by the Method of the Coordinated Substitution of Atoms.

Published in:

Semiconductors, 2022, v. 56, n. 6, p. 321, doi. 10.1134/S1063782622070016

By:

Bagraev, N. T.;
Kukushkin, S. A.;
Osipov, A. V.;
Ugolkov, V. L.

Publication type:

Article

Sputtering of aluminium nitride (002) film on cubic silicon carbide on silicon (100) substrate: influences of substrate temperature and deposition power.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 1, p. 239, doi. 10.1007/s10854-019-02480-w

By:

Iqbal, A.;
Walker, G.;
Hold, L.;
Fernandes, A.;
Lacopi, A.;
Mohd-Yasin, F.

Publication type:

Article

高温真空绝热板的制备及性能研究.

Published in:

Journal of Nanjing University of Aeronautics & Astronautics / Nanjing Hangkong Hangtian Daxue Xuebao, 2017, v. 49, n. 4, p. 586, doi. 10.16356/j.1005-2615.2017.04.020

By:

潘影;
陈照峰;
汪洋;
余盛杰

Publication type:

Article

Optical characterization of SiC films grown on Si(111).

Published in:

Applied Physics B: Lasers & Optics, 2018, v. 124, n. 12, p. 1, doi. 10.1007/s00340-018-7103-x

By:

Juri, Raghavendra Rao;
Hansen, John Lundsgaard;
Kristensen, Peter Kjær;
Julsgaard, Brian;
Pedersen, Kjeld

Publication type:

Article

CLAMPING LOSSES OF FOLDED- AND STRAIGHT-BEAM MEMS RESONATORS MADE FROM POLYCRYSTALLINE 3C-SiC FILMS.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2011, v. 25, n. 6, p. 885, doi. 10.1142/S0217979211057980

By:

CHANG, WEN-TENG

Publication type:

Article

Preparation of ultra-thick β-SiC films using different carbon sources.

Published in:

Materials Research Innovations, 2015, v. 19, p. S10-397, doi. 10.1179/1432891715Z.0000000002205

By:

Tu, R.;
Zheng, D. H.;
Cheng, H.;
Han, M. X.;
Zhang, S.;
Goto, T.

Publication type:

Article

The effect of diluent gases on the growth of β-SiC films by laser CVD with HMDS.

Published in:

Materials Research Innovations, 2015, v. 19, p. S10-403, doi. 10.1179/1432891715Z.0000000002208

By:

Zhu, P. P.;
Tu, R.;
Zhang, S.;
Han, M. X.;
Xu, Q. F.;
Sun, Q. Y.;
Zhang, L. M.;
Goto, T.;
Yan, J. S.;
Li, S. S.

Publication type:

Article

Investigation of the Electronic Properties of Silicon Carbide Films with Varied Si/C Ratios Annealed at Different Temperatures.

Published in:

Crystals (2073-4352), 2024, v. 14, n. 1, p. 45, doi. 10.3390/cryst14010045

By:

Shan, Dan;
Sun, Daoyuan;
Wang, Menglong;
Cao, Yunqing

Publication type:

Article

Enhanced Red Emission from Amorphous Silicon Carbide Films via Nitrogen Doping.

Published in:

Micromachines, 2022, v. 13, n. 12, p. 2043, doi. 10.3390/mi13122043

By:

Chen, Guangxu;
Chen, Sibin;
Lin, Zewen;
Huang, Rui;
Guo, Yanqing

Publication type:

Article

Morphology Evolution of Nanoscale-Thick Au/Pd Bimetallic Films on Silicon Carbide Substrate.

Published in:

Micromachines, 2020, v. 11, n. 4, p. 410, doi. 10.3390/mi11040410

By:

Ruffino, Francesco;
Censabella, Maria;
Piccitto, Giovanni;
Grimaldi, Maria Grazia

Publication type:

Article

The Influence of B 4 C Film Density on Damage Threshold Based on Monte Carlo Method for X-ray Mirror.

Published in:

Materials (1996-1944), 2024, v. 17, n. 5, p. 1026, doi. 10.3390/ma17051026

By:

Sui, Tingting;
Zhuo, Haohui;
Tang, Anchun;
Ju, Xin

Publication type:

Article

Toothbrushing alters the surface roughness and gloss of composite resin CAD/CAM blocks.

Published in:

Dental Materials Journal, 2016, v. 35, n. 2, p. 225, doi. 10.4012/dmj.2015-228

By:

KAMONKHANTIKUL, Krid;
ARKSORNNUKIT, Mansuang;
LAUVAHUTANON, Sasipin;
TAKAHASHI, Hidekazu

Publication type:

Article

Tuning Electrical Properties and Achieving High TCR in P-Doped a-SixC1−x:H Films.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 7, p. 3946, doi. 10.1007/s11664-024-11166-x

By:

Valencia-Grisales, D. F.;
Reyes-Betanzo, C.

Publication type:

Article

Gas sensing properties of nanocrystalline silicon carbide films.

Published in:

2019

By:

Semenov, Alexander;
Kozlovskyi, Anatolii;
Skorik, Stanislav;
Lubov, Denis

Publication type:

Letter

NANTECHNOLOGY.

Published in:: Advanced Materials & Processes, 2017, v. 175, n. 1, p. 16
Publication type:: Article

Separation of III-N/SiC epitaxial heterostructure from a Si substrate and their transfer to other substrate types.

Published in:

Semiconductors, 2017, v. 51, n. 3, p. 396, doi. 10.1134/S1063782617030149

By:

Kukushkin, S.;
Osipov, A.;
Red'kov, A.

Publication type:

Article

Anharmonic Bloch oscillations of electrons in electrically biased superlattices.

Published in:

Semiconductors, 2016, v. 50, n. 11, p. 1463, doi. 10.1134/S1063782616110117

By:

Ivanov, K.;
Girshova, E.;
Kaliteevski, M.;
Clark, S.;
Gallant, A.

Publication type:

Article

High-Voltage Silicon-Carbide Thyristor with an n-type Blocking Base.

Published in:

Semiconductors, 2016, v. 50, n. 3, p. 404, doi. 10.1134/S1063782616030155

By:

Levinshtein, M.;
Mnatsakanov, T.;
Yurkov, S.;
Tandoev, A.;
Ryu, Sei-Hyung;
Palmour, J.

Publication type:

Article

Luminescence properties of thin nanocrystalline silicon-carbide films fabricated by direct-beam ion deposition.

Published in:

Semiconductors, 2014, v. 48, n. 6, p. 711, doi. 10.1134/S1063782614060207

By:

Mirgorodskiy, I.;
Golovan, L.;
Timoshenko, V.;
Semenov, A.;
Puzikov, V.

Publication type:

Article

Interface Engineering and Microstructural Enhancement of Aluminum LM25 Composites Reinforced with MoS2 and SiC Nanoparticles.

Published in:

Advanced Engineering Materials, 2025, v. 27, n. 13, p. 1, doi. 10.1002/adem.202500222

By:

Dileepan, Sudarsan;
Alphonse, Bovas Herbert Bejaxhin;
Nallusamy, Sivanantham;
Raja, Manimegalai;
Thangavel, Gopalakrishnan;
Venkidusamy, Vasanthi;
Kavinkumar, Thangavelu;
Asaithambi, Perumal;
Sandoval‐Hevia, Gabriela;
Mangalaraja, Ramalinga Viswanathan;
Thirumurugan, Arun

Publication type:

Article

Structural and Morphological Features of Carbon—Silicon-Carbide Fibers Based on Cellulose and Triethoxyvinylsilane.

Published in:

Fibre Chemistry, 2018, v. 50, n. 2, p. 79, doi. 10.1007/s10692-018-9935-x

By:

Makarov, I. S.;
Golova, L. K.;
Mironova, M. V.;
Vinogradov, M. I.;
Bermeshev, M. V.;
Berkovich, A. K.;
Kulichikhin, V. G.

Publication type:

Article

Effect of nanocrystalline phase on the electrical conductivity of amorphous tantalum-containing silicon-carbon films.

Published in:

Inorganic Materials, 2014, v. 50, n. 9, p. 939, doi. 10.1134/S0020168514090015

By:

Barinov, A.;
Kutuzov, L.;
Popov, A.;
Presnyakov, M.

Publication type:

Article

Fabrication of Ripple Structured Silicon Carbide (SiC) Films for Nano‐Grating and Solar Cell Applications.

Published in:

ChemNanoMat, 2025, v. 14, n. 2, p. 1, doi. 10.1002/cnma.202400455

By:

Gupta, Divya;
Chhoker, Kalpana;
Rani, Usha;
Salim, Amena;
Singhal, Rahul;
Sharma, Vishal;
Aggarwal, Sanjeev

Publication type:

Article

Comparison of Critical Current Scaling Behaviors in $$\hbox {MgB}_{2}$$ /SiC/Si Thin Films.

Published in:

Journal of Low Temperature Physics, 2017, v. 187, n. 5/6, p. 565, doi. 10.1007/s10909-017-1777-z

By:

Nishida, Akihiko;
Taka, Chihiro;
Chromik, Stefan;
Durny, Rudolf

Publication type:

Article

Graphene Trails on PECVD Hydrogenated Amorphous Silicon Carbide Films SiC-a: H by Laser Writing at Room Temperature.

Published in:

Journal of Integrated Circuits & Systems, 2020, v. 15, n. 2, p. 1, doi. 10.29292/jics.v15i2.169

By:

Feria, D. J.;
Carreño, M. N. P.;
Rangel, R. C.;
Pereyra, I.

Publication type:

Article

First-Principle Study of Effects of Magnesium Oxide Adsorption in SiCNT-Based Magnetic Tunnel Junction.

Published in:

Journal of Superconductivity & Novel Magnetism, 2017, v. 30, n. 8, p. 2303, doi. 10.1007/s10948-017-4041-5

By:

Choudhary, Garima;
Choudhary, Sudhanshu

Publication type:

Article

Suspension Plasma Spraying of Sub-micron Silicon Carbide Composite Coatings.

Published in:

Journal of Thermal Spray Technology, 2015, v. 24, n. 5, p. 817, doi. 10.1007/s11666-015-0242-2

By:

Mubarok, F.;
Espallargas, N.

Publication type:

Article

Batteries: Carbon-Based Anodes for Lithium Sulfur Full Cells with High Cycle Stability (Adv. Funct. Mater. 9/2014).

Published in:

Advanced Functional Materials, 2014, v. 24, n. 9, p. 1283, doi. 10.1002/adfm.201470058

By:

Brückner, Jan;
Thieme, Sören;
Böttger‐Hiller, Falko;
Bauer, Ingolf;
Grossmann, Hannah Tamara;
Strubel, Patrick;
Althues, Holger;
Spange, Stefan;
Kaskel, Stefan

Publication type:

Article

Nonlinear-optical and structural properties of nanocrystalline silicon carbide films.

Published in:

Journal of Experimental & Theoretical Physics, 2012, v. 114, n. 2, p. 205, doi. 10.1134/S1063776112010104

By:

Brodyn, M.;
Volkov, V.;
Lyakhovetskii, V.;
Rudenko, V.;
Puzilkov, V.;
Semenov, A.

Publication type:

Article

Amorphous SiCx:H and SiCxNy:H Films Obtained from Hexamethyldisilane Vapor in Inductively Coupled RF Discharge Plasma.

Published in:

High Energy Chemistry, 2024, v. 58, n. 6, p. 693, doi. 10.1134/S0018143924700565

By:

Chagin, M. N.;
Ermakova, E. N.;
Shayapov, V. R.;
Sulyaeva, V. S.;
Maksimovskii, E. A.;
Yushina, I. V.;
Kosinova, M. L.

Publication type:

Article

Synthesis of thin‐film materials using nonthermal plasma at a higher degree of dissociation.

Published in:

Plasma Processes & Polymers, 2023, v. 20, n. 7, p. 1, doi. 10.1002/ppap.202300019

By:

Cech, Vladimir;
Branecky, Martin

Publication type:

Article

Low-energy Ar+ and N+ ion beam induced chemical vapor deposition using hexamethyldisilazane for the formation of nitrogen containing SiC and carbon containing SiN films.

Published in:

PLoS ONE, 2021, v. 16, n. 10, p. 1, doi. 10.1371/journal.pone.0259216

By:

Yoshimura, Satoru;
Sugimoto, Satoshi;
Takeuchi, Takae;
Murai, Kensuke;
Kiuchi, Masato

Publication type:

Article

Erratum to: Synthesis and investigation of silicon carbide nanowires by HFCVD method.

Published in:

Bulletin of Materials Science, 2016, v. 39, n. 4, p. 961, doi. 10.1007/s12034-016-1267-y

By:

MORTAZAVI, S;
GHORANNEVISS, M;
DADASHBABA, M;
ALIPOUR, R

Publication type:

Article

Synthesis and investigation of silicon carbide nanowires by HFCVD method.

Published in:

Bulletin of Materials Science, 2016, v. 39, n. 4, p. 953, doi. 10.1007/s12034-016-1183-1

By:

MORTAZAVI, S;
GHORANNEVISS, M;
DADASHBABA, M;
ALIPOUR, R

Publication type:

Article