Works matching DE "SEMICONDUCTOR-metal boundaries"

Results: 127

Exploiting Memristive BiFeO3 Bilayer Structures for Compact Sequential Logics.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 22, p. 3357, doi. 10.1002/adfm.201303365

By:

You, Tiangui;
Shuai, Yao;
Luo, Wenbo;
Du, Nan;
Bürger, Danilo;
Skorupa, Ilona;
Hübner, René;
Henker, Stephan;
Mayr, Christian;
Schüffny, René;
Mikolajick, Thomas;
Schmidt, Oliver G.;
Schmidt, Heidemarie

Publication type:

Article

On the conduction mechanisms of Au/(CuO-CuO-PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current-voltage-temperature (I-V-T) characteristics.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 1, p. 159, doi. 10.1007/s10854-017-7900-8

By:

Büyükbaş Uluşan, A.;
Tataroğlu, A.;
Azizian-Kalandaragh, Y.;
Altındal, Ş.

Publication type:

Article

Thermally stable and low-resistance W/Ti/Au contacts to n-type GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 1, p. 9, doi. 10.1007/s10854-008-9586-4

By:

Reddy, V. Rajagopal;
Sang-Ho Kim;
Hyun-Gi Hong;
Sang-Won Yoon;
Jae-Pyoung Ahn;
Tae-Yeon Seong

Publication type:

Article

Application of power loss calculation to estimate the specific contact resistance of the screen-printed silver ohmic contacts of the large area silicon solar cells.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 8, p. 805, doi. 10.1007/s10854-007-9210-z

By:

Vinod, P. N.

Publication type:

Article

Schottky barrier height modulation at metal/n-GaN interface by BCl3/Ar plasma treatment.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1011, doi. 10.1002/pssb.201451577

By:

Ito, Toshihide;
Nunoue, Shinya

Publication type:

Article

A NEW SCHEME FOR THE DESIGN OF BALANCED FREQUENCY TRIPLER WITH SCHOTTKY DIODES.

Published in:

Progress in Electromagnetics Research, 2013, v. 137, p. 407, doi. 10.2528/pier13011706

By:

Jian Guo;
Jie Xu;
Cheng Qian

Publication type:

Article

Influence of the metallic contact surface area on the low-frequency noises of metal-semiconductor contacts.

Published in:

Armenian Journal of Physics, 2015, v. 8, n. 1, p. 30

By:

KHONDKARYAN, H. D.

Publication type:

Article

Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes.

Published in:

Advances in Condensed Matter Physics, 2010, p. 1, doi. 10.1155/2010/526929

By:

Pipinys, P.;
Lapeika, V.

Publication type:

Article

Electrical Comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic Contacts on Undoped GaN HEMTs Structure with AlN Interlayer.

Published in:

International Journal of High Speed Electronics & Systems, 2007, v. 17, n. 1, p. 85, doi. 10.1142/S0129156407004278

By:

Sun, Yunju;
Eastman, Lester F.

Publication type:

Article

OHMIC CONTACTS TO SIC.

Published in:

International Journal of High Speed Electronics & Systems, 2005, v. 15, n. 4, p. 781, doi. 10.1142/S0129156405003429

By:

ROCCAFORTE, FABRIZIO;
LA VIA, FRANCESCO;
RAINERI, VITO

Publication type:

Article

DESIGN OF HIGH VOLTAGE 4H-SiC SUPERJUNCTION SCHOTTKY RECTIFIERS.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 241, doi. 10.1142/S012915640400296X

By:

Zhu, Lin;
Losee, Peter;
Chow, T. Paul

Publication type:

Article

MODELACIÓN DE LA CONDUCCIÓN TRANSVERSAL EN COMPÓSITOS SUPERCONDUCTORES.

Published in:

Revista Cubana de Física, 2011, v. 28, n. 1, p. 35

By:

Borroto, A.;
Del Río, L.;
Arronte, M.;
Altshuler, E.

Publication type:

Article

Enhanced hydrogen sensitivity of AlGaN/GaN heterojunction gas sensors by GaN-cap layer.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 14, p. 896, doi. 10.1049/el.2018.1167

By:

Chung, G.;
Cha, H.-Y.;
Kim, H.

Publication type:

Article

CO-Sensing Properties of Diode-Type Gas Sensors Employing Anodized Titania and Noble-Metal Electrodes under Hydrogen Atmosphere.

Published in:

Chemosensors, 2018, v. 6, n. 1, p. 7, doi. 10.3390/chemosensors6010007

By:

Hyodo, Takeo;
Morinaga, Naoki;
Shimizu, Yasuhiro

Publication type:

Article

A study of using femtosecond LIBS in analyzing metallic thin film-semiconductor interface.

Published in:

Applied Physics B: Lasers & Optics, 2011, v. 102, n. 1, p. 197, doi. 10.1007/s00340-010-4144-1

By:

Galmed, A.;
Kassem, A.;
Bergmann, H.;
Harith, M.

Publication type:

Article

Barrier height inhomogeneities in Cu-nMoSe2 Schottky diode.

Published in:

2011

By:

Sumesh, C.K.;
Patel, K.D.;
Pathak, V.M.;
Srivastav, R.

Publication type:

Back Cover

Numerical modeling of the effect of optical pulse position on the impulse response of a Metal-Semiconductor-Metal (MSM) photodetector (low field condition).

Published in:

European Physical Journal - Applied Physics, 2011, v. 55, n. 1, p. N.PAG, doi. 10.1051/epjap/2011110016

By:

Habibpoor, A.;
Mashayekhi, H.R.

Publication type:

Article

Single InGaAs Quantum Dot Coupling to the Plasmon Resonance of a Metal Nanocrystal.

Published in:

Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1926, doi. 10.1007/s11671-010-9785-9

By:

Urbańczyk, A.;
Hamhuis, G.;
Nötzel, R.

Publication type:

Article

Designing p-Type Semiconductor-Metal Hybrid Structures for Improved Photocatalysis.

Published in:

Angewandte Chemie International Edition, 2014, v. 53, n. 20, p. 5107, doi. 10.1002/anie.201310635

By:

Wang, Lili;
Ge, Jing;
Wang, Ailun;
Deng, Mingsen;
Wang, Xijun;
Bai, Song;
Li, Rui;
Jiang, Jun;
Zhang, Qun;
Luo, Yi;
Xiong, Yujie

Publication type:

Article

Conversion of environmental heat to electric energy in the metal-dielectric-semiconductor-metal system.

Published in:

Technical Physics, 2013, v. 58, n. 11, p. 1619, doi. 10.1134/S1063784213110170

By:

Lunin, L. S.;
Karapet’yan, G. Ya.;
Dneprovskii, V. G.;
Kataev, V. F.

Publication type:

Article

Mechanism of current flow in alloyed ohmic In/GaAs contacts.

Published in:

Technical Physics, 2007, v. 52, n. 2, p. 285, doi. 10.1134/S1063784207020235

By:

Blank, T.;
Gol’dberg, Yu.;
Konstantinov, O.;
Nikitin, V.;
Posse, E.

Publication type:

Article

Hysteresis Loop Construction for the Metal–Semiconductor Phase Transition in Vanadium Dioxide Films.

Published in:

Technical Physics, 2002, v. 47, n. 9, p. 1134, doi. 10.1134/1.1508078

By:

Klimov, V. A.;
Timofeeva, I. O.;
Khanin, S. D.;
Shadrin, E. B.;
Ilinskiı, A. V.;
Silva-Andrade, F.

Publication type:

Article

Nonequilibrium Semiconductor–Metal Phase Transition Due to Self-Heating.

Published in:

Technical Physics, 2002, v. 47, n. 7, p. 932, doi. 10.1134/1.1495063

By:

Melkikh, A. V.;
Povzner, A. A.

Publication type:

Article

Transition Processes Occurring under Continuous and Stepwise Heating of GaAs Surface-Barrier Structures.

Published in:

Technical Physics, 2001, v. 46, n. 9, p. 1128, doi. 10.1134/1.1404165

By:

Gol’dberg, Yu. A.;
Posse, E. A.

Publication type:

Article

Semiconductor–metal phase transition under a strain induced by a spherical indenter.

Published in:

Technical Physics, 1998, v. 43, n. 3, p. 314, doi. 10.1134/1.1258916

By:

Kaminskiı, V. V.;
Lanyi, S.

Publication type:

Article

Design of a Novel Sampling Pulse Generator for Ultra-Wideband Through-Wall Radar.

Published in:

Telecommunication Engineering, 2014, v. 54, n. 9, p. 1280, doi. 10.3969/j.issn.1001-893x.2014.09.020

By:

GUO Yu;
ZHU Guo-fu

Publication type:

Article

Materials chemistry: Illuminated oxides.

Published in:

Nature Chemistry, 2010, v. 2, n. 7, p. 517, doi. 10.1038/nchem.713

By:

Prassides, Kosmas

Publication type:

Article

NANOPOROUS SILICON METAL-SEMICONDUCTOR-METAL PHOTODETECTOR.

Published in:

Journal of Nonlinear Optical Physics & Materials, 2010, v. 19, n. 4, p. 713, doi. 10.1142/S0218863510005637

By:

ATIWONGSANGTHONG, N.;
NIEMCHAROEN, S.;
TITIROONGRUANG, W.

Publication type:

Article

An improved power loss model of full-bridge converter under light load condition.

Published in:

PLoS ONE, 2018, v. 13, n. 12, p. 1, doi. 10.1371/journal.pone.0208239

By:

Yao, Lele;
Li, Donghui;
Liu, Lingling

Publication type:

Article

GaN planar Schottky barrier diode with cut-off frequency of 902 GHz.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 16, p. 1408, doi. 10.1049/el.2016.1937

By:

Shixiong Liang;
Yulong Fang;
Dong Xing;
Zhirong Zhang;
Junlong Wang;
Hongyu Guo;
Lisen Zhang;
Guodong Gu;
Zhihong Feng

Publication type:

Article

Ohmic contacts to n-type GaN layer using ECR-sputtered AlN interfacial layer.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 22, p. 1823, doi. 10.1049/el.2015.2037

By:

Terano, A.;
Takei, A.;
Tanaka, S.;
Tsuchiya, T.

Publication type:

Article

Low onset voltage of GaN on Si Schottky barrier diode using various recess depths.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 16, p. 1164, doi. 10.1049/el.2014.1747

By:

Youngrak Park;
Jung-Jin Kim;
Woojin Chang;
Hyun-Gyu Jang;
Jeho Na;
Hyunsoo Lee;
Chi-Hoon Jun;
Ho-young Cha;
Jae Kyoung Mun;
Sang Choon Ko;
Eun Soo Nam

Publication type:

Article

Offset error reduction using gate-bulk-driven error correction amplifier for low-voltage sub-bandgap reference.

Published in:

Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 11, p. 1, doi. 10.1049/el.2013.0765

By:

Li Lu;
Changzhi Li

Publication type:

Article

On the Role of Tunneling in Metal–Semiconductor Nanocontacts.

Published in:

Journal of Experimental & Theoretical Physics, 2004, v. 99, n. 1, p. 211, doi. 10.1134/1.1787094

By:

Vostokov, N. V.;
Shashkin, V. I.

Publication type:

Article

A Simple Method Producing Shadow Masks Used in Electrical Characterization Techniques.

Published in:

Instruments & Experimental Techniques, 2003, v. 46, n. 3, p. 410, doi. 10.1023/A:1024443228073

By:

Coskun, C.;
Efeoglu, H.

Publication type:

Article

On the temperature dependent current transport mechanisms and barrier inhomogeneity in Au/SnO-PVA/n-Si Schottky barrier diodes.

Published in:

Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 8, p. 1, doi. 10.1007/s00339-017-1168-y

By:

Bilkan, Ç.;
Badali, Y.;
Fotouhi-Shablou, S.;
Azizian-Kalandaragh, Y.;
Altındal, Ş.

Publication type:

Article

Transport characteristics and surface potential distribution of electrically stressed TiO single crystals.

Published in:

Applied Physics A: Materials Science & Processing, 2011, v. 102, n. 4, p. 949, doi. 10.1007/s00339-011-6277-4

By:

Kim, Haeri;
Kim, Dong-Wook

Publication type:

Article

Metal/TiO interfaces for memristive switches.

Published in:

Applied Physics A: Materials Science & Processing, 2011, v. 102, n. 4, p. 785, doi. 10.1007/s00339-011-6265-8

By:

Yang, J.;
Strachan, John;
Miao, Feng;
Zhang, Min-Xian;
Pickett, Matthew;
Yi, Wei;
Ohlberg, Douglas;
Medeiros-Ribeiro, G.;
Williams, R.

Publication type:

Article

First-order phase transition characteristic of the high temperature metal–semiconductor transition in [Ca2CoO3]0.62[CoO2].

Published in:

Applied Physics A: Materials Science & Processing, 2009, v. 94, n. 4, p. 911, doi. 10.1007/s00339-008-4849-8

By:

Cheng, Jinguang;
Sui, Yu;
Wang, Yang;
Wang, Xianjie;
Su, Wenhui

Publication type:

Article

Ohmic contact formation to bulk and heterostructure gallium nitride family semiconductors.

Published in:

Applied Physics A: Materials Science & Processing, 2009, v. 94, n. 3, p. 633, doi. 10.1007/s00339-008-4848-9

By:

Rahman, Faiz;
Sun Xu;
Watson, Ian;
Mutha, Dinesh;
Oxland, Richard;
Johnson, Nigel;
Banerjee, Abhishek;
Wasige, Edward

Publication type:

Article

Formation of thermally stable low-resistance Ti/W/Au ohmic contacts on n-type GaN.

Published in:

Applied Physics A: Materials Science & Processing, 2005, v. 81, n. 3, p. 561, doi. 10.1007/s00339-004-2673-3

By:

Reddy, V. R.;
Kim, S.-H.;
Seong, T.-Y.

Publication type:

Article

Orbital magneto-electronic heat capacity of hydrogenated graphene in the presence of dilute charged impurity.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2017, v. 31, n. 8, p. -1, doi. 10.1142/S0217979217500539

By:

Yarmohammadi, Mohsen;
Kazzaz, Houshang Araghi;
Feali, Mohammad Saeed

Publication type:

Article

RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System.

Published in:

Sensors (14248220), 2014, v. 14, n. 2, p. 3493, doi. 10.3390/s140203493

By:

Mustafa, Farahiyah;
Abdul Manaf Hashim

Publication type:

Article

A wide-bandgap metal-semiconductor-metal nanostructure made entirely from graphene.

Published in:

Nature Physics, 2013, v. 9, n. 1, p. 49, doi. 10.1038/nphys2487

By:

Hicks, J.;
Tejeda, A.;
Taleb-Ibrahimi, A.;
Nevius, M. S.;
Wang, F.;
Shepperd, K.;
Palmer, J.;
Bertran, F.;
Le Fèvre, P.;
Kunc, J.;
de Heer, W. A.;
Berger, C.;
Conrad, E. H.

Publication type:

Article

Nonlinear Effects in MSM Structures Based on AgSSe.

Published in:

Journal of Engineering Physics & Thermophysics, 2015, v. 88, n. 4, p. 1030, doi. 10.1007/s10891-015-1281-8

By:

Gadzhieva, G.;
Akhmedov, I.;
Abdul-zade, N.

Publication type:

Article

A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss.

Published in:

IET Power Electronics (Wiley-Blackwell), 2021, v. 14, n. 11, p. 2021, doi. 10.1049/pel2.12169

By:

Liu, Sicheng;
Tang, Xiaoyan;
Song, Qingwen;
Wang, Yuehu;
Bai, Ruijie;
Zhang, Yimen;
Zhang, Yuming

Publication type:

Article

Chemical Doping Effects on CVD‐Grown Multilayer MoSe2 Transistor.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 6, p. 1, doi. 10.1002/aelm.201700639

By:

Yoo, Hocheon;
Hong, Seongin;
Moon, Hyunseong;
On, Sungmin;
Ahn, Hyungju;
Lee, Han‐Koo;
Kim, Sunkook;
Hong, Young Ki;
Kim, Jae‐Joon

Publication type:

Article

Electrical properties of metal-semiconductor multilayers with amorphous structure.

Published in:

Technical Physics Letters, 2006, v. 32, n. 3, p. 262, doi. 10.1134/S1063785006030266

By:

Kalinin, Yu. E.;
Korolev, K. G.;
Sitnikov, A. V.

Publication type:

Article

Non-Alloy Cr/Au Ohmic Contacts in the Technology of Planar Beam-Lead GaAs p–i–n Diodes.

Published in:

Technical Physics Letters, 2005, v. 31, n. 7, p. 581, doi. 10.1134/1.2001060

By:

Aleksandrov, S. E.;
Volkov, V. V.;
Ivanova, V. P.;
Kuz'michev, Yu. S.;
Solov'ev, Yu. V.

Publication type:

Article

Peculiarities in the Mechanism of Current Flow through an Ohmic Contact to Gallium Phosphide.

Published in:

Technical Physics Letters, 2004, v. 30, n. 10, p. 806, doi. 10.1134/1.1813716

By:

Blank, T. V.;
Goldberg, Yu. A.;
Konstantinov, O. V.;
Nikitin, V. G.;
Posse, E. A.

Publication type:

Article