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Construction of Mo/Mo<sub>2</sub>C@C modified ZnIn<sub>2</sub>S<sub>4</sub> Schottky junctions for efficient photo-thermal assisted hydrogen evolution.
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- Materials Reports: Energy, 2023, v. 3, n. 4, p. 1, doi. 10.1016/j.matre.2023.100234
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- Article
A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss.
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- IET Power Electronics (Wiley-Blackwell), 2021, v. 14, n. 11, p. 2021, doi. 10.1049/pel2.12169
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- Article
Fabrication of Nickel Contacts for Mg<sub>2</sub>Si Based Thermoelectric Generators via an Induction Assisted Rapid Monoblock Sintering Technique.
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- Journal of Electronic Materials, 2019, v. 48, n. 3, p. 1754, doi. 10.1007/s11664-018-06889-7
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- Article
An improved power loss model of full-bridge converter under light load condition.
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- PLoS ONE, 2018, v. 13, n. 12, p. 1, doi. 10.1371/journal.pone.0208239
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- Article
Non-destructive Detection of Screw Dislocations and the Corresponding Defects Nucleated from Them During SiC Epitaxial Growth and Their Effect on Device Characteristics.
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- Journal of Electronic Materials, 2018, v. 47, n. 9, p. 5099, doi. 10.1007/s11664-018-6414-3
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- Article
Enhanced hydrogen sensitivity of AlGaN/GaN heterojunction gas sensors by GaN-cap layer.
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- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 14, p. 896, doi. 10.1049/el.2018.1167
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- Article
Chemical Doping Effects on CVD‐Grown Multilayer MoSe<sub>2</sub> Transistor.
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- Advanced Electronic Materials, 2018, v. 4, n. 6, p. 1, doi. 10.1002/aelm.201700639
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- Article
A Comparative Study of Gold Impregnation Methods for Obtaining Metal/Semiconductor Nanophotocatalysts: Direct Turkevich, Inverse Turkevich, and Progressive Heating Methods.
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- Catalysts (2073-4344), 2018, v. 8, n. 4, p. 161, doi. 10.3390/catal8040161
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- Article
Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing.
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- Materials (1996-1944), 2018, v. 11, n. 4, p. 471, doi. 10.3390/ma11040471
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- Article
CO-Sensing Properties of Diode-Type Gas Sensors Employing Anodized Titania and Noble-Metal Electrodes under Hydrogen Atmosphere.
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- Chemosensors, 2018, v. 6, n. 1, p. 7, doi. 10.3390/chemosensors6010007
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- Article
On the conduction mechanisms of Au/(CuO-CuO-PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current-voltage-temperature (I-V-T) characteristics.
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- Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 1, p. 159, doi. 10.1007/s10854-017-7900-8
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- Article
New Method for the Development of Plasmonic Metal-Semiconductor Interface Layer: Polymer Composites with Reduced Energy Band Gap.
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- Journal of Nanomaterials, 2017, p. 1, doi. 10.1155/2017/8140693
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- Article
Performance Analysis of a Pt/ n-GaN Schottky Barrier UV Detector.
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- Journal of Electronic Materials, 2017, v. 46, n. 11, p. 6563, doi. 10.1007/s11664-017-5696-1
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- Article
On the temperature dependent current transport mechanisms and barrier inhomogeneity in Au/SnO-PVA/n-Si Schottky barrier diodes.
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- Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 8, p. 1, doi. 10.1007/s00339-017-1168-y
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- Article
Impurity transport in fractal media in the presence of a degrading diffusion barrier.
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- Journal of Experimental & Theoretical Physics, 2017, v. 125, n. 2, p. 340, doi. 10.1134/S1063776117070056
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- Article
Orbital magneto-electronic heat capacity of hydrogenated graphene in the presence of dilute charged impurity.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2017, v. 31, n. 8, p. -1, doi. 10.1142/S0217979217500539
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- Article
First-Principles Study of Vacancies in Ti<sub>3</sub>SiC<sub>2</sub> and Ti<sub>3</sub>AlC<sub>2</sub>.
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- Materials (1996-1944), 2017, v. 10, n. 2, p. 103, doi. 10.3390/ma10020103
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- Article
A study of hydrothermally grown ZnO nanorod-based metal-semiconductor-metal UV detectors on glass substrates.
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- Nanomaterials & Nanotechnology, 2017, v. 7, p. 1, doi. 10.1177/1847980417702144
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- Article
Effect of temperature-bias annealing on the hysteresis and subthreshold behavior of multilayer MoS<sub>2</sub> transistors.
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- Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 11, p. 797, doi. 10.1002/pssr.201600209
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Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO film.
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- Journal of Materials Science, 2016, v. 51, n. 17, p. 8233, doi. 10.1007/s10853-016-0098-y
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- Article
DLTS analysis of high resistive edge termination technique-induced defects in GaN-based Schottky barrier diodes.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 9, p. 2364, doi. 10.1002/pssa.201532895
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GaN planar Schottky barrier diode with cut-off frequency of 902 GHz.
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- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 16, p. 1408, doi. 10.1049/el.2016.1937
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- Article
Ohmic Contact of Au/Mo on HgCdTe.
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- Journal of Electronic Materials, 2016, v. 45, n. 6, p. 2802, doi. 10.1007/s11664-016-4375-y
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- Article
Matrix-type effect on the magnetotransport properties of Ni-AlO and Ni-NbO composite systems.
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- Semiconductors, 2016, v. 50, n. 6, p. 709, doi. 10.1134/S1063782616060233
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- Article
Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing.
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- Materials (1996-1944), 2016, v. 9, n. 5, p. 315, doi. 10.3390/ma9050315
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- Article
GaN HEMTs with quaternary In<sub>0.05</sub>Al<sub>0.75</sub>Ga<sub>0.2</sub>N Schottky barrier layer.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 889, doi. 10.1002/pssa.201532566
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- Article
Capacitance roll-off and frequency-dispersion capacitance-conductance phenomena in field plate and guard ring edge-terminated Ni/SiO<sub>2</sub>/4H-nSiC Schottky barrier diodes.
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- Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 1, p. 193, doi. 10.1002/pssa.201532454
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- Article
Structural and electrical-physical properties of the ohmic contacts based on palladium to n<sup>+</sup>-n-n<sup>++</sup>-n<sup>+++</sup>-InP.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2015, v. 18, n. 4, p. 391, doi. 10.15407/spqeo18.04.391
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Ohmic contacts to n-type GaN layer using ECR-sputtered AlN interfacial layer.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 22, p. 1823, doi. 10.1049/el.2015.2037
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- Article
The Electrical Properties of Au/P3HT/n-GaAs Schottky Barrier Diode.
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- Acta Physica Polonica: A, 2015, v. 128, n. 2B, p. B-170, doi. 10.12693/APhysPolA.128.B-170
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In Situ Photocatalytically Heterostructured ZnOAg Nanoparticle Composites as Effective Cathode-Modifying Layers for Air-Processed Polymer Solar Cells.
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- Chemistry - A European Journal, 2015, v. 21, n. 33, p. 11899, doi. 10.1002/chem.201405073
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- Article
Nonlinear Effects in MSM Structures Based on AgSSe.
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- Journal of Engineering Physics & Thermophysics, 2015, v. 88, n. 4, p. 1030, doi. 10.1007/s10891-015-1281-8
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Molecular junctions: Single-molecule contacts exposed.
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- Nature Materials, 2015, v. 14, n. 5, p. 465, doi. 10.1038/nmat4225
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- Article
Schottky barrier height modulation at metal/n-GaN interface by BCl<sub>3</sub>/Ar plasma treatment.
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- Physica Status Solidi (B), 2015, v. 252, n. 5, p. 1011, doi. 10.1002/pssb.201451577
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- Article
Temperature dependences of the contact resistivity in ohmic contacts to n-InN.
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- Semiconductors, 2015, v. 49, n. 4, p. 461, doi. 10.1134/S1063782615040193
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- Article
Influence of the metallic contact surface area on the low-frequency noises of metal-semiconductor contacts.
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- Armenian Journal of Physics, 2015, v. 8, n. 1, p. 30
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- Article
Electrical Characterization of Pd-Doped CMAS-TiO<sub>2</sub> Glass-Ceramics.
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- International Journal of Applied Glass Science, 2014, v. 5, n. 3, p. 217, doi. 10.1111/ijag.12086
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- Article
Design of a Novel Sampling Pulse Generator for Ultra-Wideband Through-Wall Radar.
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- Telecommunication Engineering, 2014, v. 54, n. 9, p. 1280, doi. 10.3969/j.issn.1001-893x.2014.09.020
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- Article
Low onset voltage of GaN on Si Schottky barrier diode using various recess depths.
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- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 16, p. 1164, doi. 10.1049/el.2014.1747
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- Article
Exploiting Memristive BiFeO<sub>3</sub> Bilayer Structures for Compact Sequential Logics.
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- Advanced Functional Materials, 2014, v. 24, n. 22, p. 3357, doi. 10.1002/adfm.201303365
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- Article
Designing p-Type Semiconductor-Metal Hybrid Structures for Improved Photocatalysis.
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- Angewandte Chemie International Edition, 2014, v. 53, n. 20, p. 5107, doi. 10.1002/anie.201310635
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- Article
Problem of fabrication of diamond-based high-power microwave FETs.
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- Journal of Communications Technology & Electronics, 2014, v. 59, n. 4, p. 379, doi. 10.1134/S106422691403005X
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- Article
RF-to-DC Characteristics of Direct Irradiated On-Chip Gallium Arsenide Schottky Diode and Antenna for Application in Proximity Communication System.
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- Sensors (14248220), 2014, v. 14, n. 2, p. 3493, doi. 10.3390/s140203493
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- Article
Conversion of environmental heat to electric energy in the metal-dielectric-semiconductor-metal system.
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- Technical Physics, 2013, v. 58, n. 11, p. 1619, doi. 10.1134/S1063784213110170
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- Article
Parameter determination from current-voltage characteristics of HgCdTe photodiodes in forward bias region.
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- Optical & Quantum Electronics, 2013, v. 45, n. 7, p. 641, doi. 10.1007/s11082-012-9642-4
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- Article
STRAIN-TUNABLE BAND GAP OF <sub>3</sub> SHEET: A FIRST-PRINCIPLES INVESTIGATION.
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- Modern Physics Letters B, 2013, v. 27, n. 15, p. -1, doi. 10.1142/S0217984913501108
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- Article
Effects of thermal annealing on Ti/Al Ohmic contacts on quaternary n-Al<sub>0.08</sub>In<sub>0.08</sub>Ga<sub>0.84</sub>N alloy film.
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- International Journal of Nanoelectronics & Materials, 2013, v. 6, n. 2, p. 113
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A NEW SCHEME FOR THE DESIGN OF BALANCED FREQUENCY TRIPLER WITH SCHOTTKY DIODES.
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- Progress in Electromagnetics Research, 2013, v. 137, p. 407, doi. 10.2528/pier13011706
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- Article
Offset error reduction using gate-bulk-driven error correction amplifier for low-voltage sub-bandgap reference.
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- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 11, p. 1, doi. 10.1049/el.2013.0765
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A wide-bandgap metal-semiconductor-metal nanostructure made entirely from graphene.
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- Nature Physics, 2013, v. 9, n. 1, p. 49, doi. 10.1038/nphys2487
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- Article