Works matching DE "SEMICONDUCTOR-metal boundaries"
Results: 126
Exploiting Memristive BiFeO<sub>3</sub> Bilayer Structures for Compact Sequential Logics.
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- Advanced Functional Materials, 2014, v. 24, n. 22, p. 3357, doi. 10.1002/adfm.201303365
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Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO film.
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- Journal of Materials Science, 2016, v. 51, n. 17, p. 8233, doi. 10.1007/s10853-016-0098-y
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A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss.
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- IET Power Electronics (Wiley-Blackwell), 2021, v. 14, n. 11, p. 2021, doi. 10.1049/pel2.12169
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Impurity transport in fractal media in the presence of a degrading diffusion barrier.
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- Journal of Experimental & Theoretical Physics, 2017, v. 125, n. 2, p. 340, doi. 10.1134/S1063776117070056
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A Comparative Study of Gold Impregnation Methods for Obtaining Metal/Semiconductor Nanophotocatalysts: Direct Turkevich, Inverse Turkevich, and Progressive Heating Methods.
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- Catalysts (2073-4344), 2018, v. 8, n. 4, p. 161, doi. 10.3390/catal8040161
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A study of using femtosecond LIBS in analyzing metallic thin film-semiconductor interface.
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- Applied Physics B: Lasers & Optics, 2011, v. 102, n. 1, p. 197, doi. 10.1007/s00340-010-4144-1
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Commutation technique for an exciton photocreated close to a metal.
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- European Physical Journal B: Condensed Matter, 2003, v. 31, n. 3, p. 305, doi. 10.1140/epjb/e2003-00035-5
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- Article
Photoemission Microscopy Investigation of Buried p–n GaAs Homojunctions and Al/n-GaAs Schottky Barriers.
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- Surface Review & Letters, 2002, v. 9, n. 1, p. 249, doi. 10.1142/S0218625X02002154
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Microscopic Understanding and Control of Surfaces and Interfaces of Compound Semiconductors for Mesoscopic Devices.
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- Surface Review & Letters, 2000, v. 7, n. 5/6, p. 583, doi. 10.1142/S0218625X0000066X
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Analysis of the actual schottky-barrier contact model in a wide temperature and bias-voltage range.
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- Radiophysics & Quantum Electronics, 2004, v. 47, n. 9, p. 688, doi. 10.1007/s11141-005-0006-9
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On the Role of Tunneling in Metal–Semiconductor Nanocontacts.
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- Journal of Experimental & Theoretical Physics, 2004, v. 99, n. 1, p. 211, doi. 10.1134/1.1787094
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CO-Sensing Properties of Diode-Type Gas Sensors Employing Anodized Titania and Noble-Metal Electrodes under Hydrogen Atmosphere.
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- Chemosensors, 2018, v. 6, n. 1, p. 7, doi. 10.3390/chemosensors6010007
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- Article
Electrical Characterization of Pd-Doped CMAS-TiO<sub>2</sub> Glass-Ceramics.
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- International Journal of Applied Glass Science, 2014, v. 5, n. 3, p. 217, doi. 10.1111/ijag.12086
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- Article
Single InGaAs Quantum Dot Coupling to the Plasmon Resonance of a Metal Nanocrystal.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1926, doi. 10.1007/s11671-010-9785-9
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Sb-contained thin films Structural and electric properties.
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- Materials Science (0137-1339), 2006, v. 24, n. 4, p. 929
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Thermal Stability of Nitride-Based Diffusion Barriers for Ohmic Contacts to n-GaN.
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- Journal of Electronic Materials, 2007, v. 36, n. 12, p. 1662, doi. 10.1007/s11664-007-0277-3
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Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu Multilayer Structures as Schottky Metals for GaAs Diodes.
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- Journal of Electronic Materials, 2004, v. 33, n. 7, p. L15, doi. 10.1007/s11664-004-0251-2
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Thermally stable and low-resistance W/Ti/Au contacts to n-type GaN.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 1, p. 9, doi. 10.1007/s10854-008-9586-4
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Application of power loss calculation to estimate the specific contact resistance of the screen-printed silver ohmic contacts of the large area silicon solar cells.
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- Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 8, p. 805, doi. 10.1007/s10854-007-9210-z
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Effects of thermal annealing on Ti/Al Ohmic contacts on quaternary n-Al<sub>0.08</sub>In<sub>0.08</sub>Ga<sub>0.84</sub>N alloy film.
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- International Journal of Nanoelectronics & Materials, 2013, v. 6, n. 2, p. 113
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THE IMPORTANCE OF Fe SURFACE STATES FOR MAGNETIC TUNNEL JUNCTION BASED SPINTRONIC DEVICES.
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- Modern Physics Letters B, 2008, v. 22, n. 26, p. 2529, doi. 10.1142/S0217984908017060
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HIGH SENSITIVE HYDROGEN SENSOR BY Pd/OXIDE/InGaP MOS STRUCTURE.
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- Modern Physics Letters B, 2006, v. 20, n. 28, p. 1781, doi. 10.1142/S0217984906011888
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- Article
STUDY OF THE INHOMOGENEITY OF SCHOTTKY BARRIER HEIGHT IN NICKEL SILICIDE BY THE INTERNAL PHOTOEMISSION SPECTROSCOPY.
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- Modern Physics Letters B, 2006, v. 20, n. 28, p. 1825, doi. 10.1142/S0217984906012110
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A 1.485-Gbit/s Video Signal Transmission System at Carrier Frequencies of 240 GHz and 300 GHz.
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- ETRI Journal, 2011, v. 33, n. 6, p. 965, doi. 10.4218/etrij.11.0211.0053
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Design of a Novel Sampling Pulse Generator for Ultra-Wideband Through-Wall Radar.
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- Telecommunication Engineering, 2014, v. 54, n. 9, p. 1280, doi. 10.3969/j.issn.1001-893x.2014.09.020
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A Simple Method Producing Shadow Masks Used in Electrical Characterization Techniques.
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- Instruments & Experimental Techniques, 2003, v. 46, n. 3, p. 410, doi. 10.1023/A:1024443228073
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Influence of the metallic contact surface area on the low-frequency noises of metal-semiconductor contacts.
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- Armenian Journal of Physics, 2015, v. 8, n. 1, p. 30
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Matrix-type effect on the magnetotransport properties of Ni-AlO and Ni-NbO composite systems.
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- Semiconductors, 2016, v. 50, n. 6, p. 709, doi. 10.1134/S1063782616060233
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Temperature dependences of the contact resistivity in ohmic contacts to n-InN.
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- Semiconductors, 2015, v. 49, n. 4, p. 461, doi. 10.1134/S1063782615040193
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The nature of electrical interaction of Schottky contacts.
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- Semiconductors, 2011, v. 45, n. 8, p. 1009, doi. 10.1134/S1063782611080227
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A wide-bandgap metal-semiconductor-metal nanostructure made entirely from graphene.
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- Nature Physics, 2013, v. 9, n. 1, p. 49, doi. 10.1038/nphys2487
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On the conduction mechanisms of Au/(CuO-CuO-PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current-voltage-temperature (I-V-T) characteristics.
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- Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 1, p. 159, doi. 10.1007/s10854-017-7900-8
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Molecular control over Au/GaAs diodes.
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- Nature, 2000, v. 404, n. 6774, p. 166, doi. 10.1038/35004539
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Pushing electrons around.
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- Nature, 2000, v. 404, n. 6774, p. 137, doi. 10.1038/35004697
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Effect of temperature-bias annealing on the hysteresis and subthreshold behavior of multilayer MoS<sub>2</sub> transistors.
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- Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 11, p. 797, doi. 10.1002/pssr.201600209
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- Article
Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing.
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- Materials (1996-1944), 2018, v. 11, n. 4, p. 471, doi. 10.3390/ma11040471
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A NEW SCHEME FOR THE DESIGN OF BALANCED FREQUENCY TRIPLER WITH SCHOTTKY DIODES.
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- Progress in Electromagnetics Research, 2013, v. 137, p. 407, doi. 10.2528/pier13011706
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- Article
Analysis of Reverse-Bias Leakage Current Mechanisms in Metal/GaN Schottky Diodes.
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- Advances in Condensed Matter Physics, 2010, p. 1, doi. 10.1155/2010/526929
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- Article
TEMPERATURE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF Cr/p–Si(100) SCHOTTKY BARRIER DIODES.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2008, v. 22, n. 14, p. 2309, doi. 10.1142/S0217979208039496
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MODELACIÓN DE LA CONDUCCIÓN TRANSVERSAL EN COMPÓSITOS SUPERCONDUCTORES.
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- Revista Cubana de Física, 2011, v. 28, n. 1, p. 35
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- Article
Influence of the back contact on the electrophysical and functional characteristics of thin-film CdTe Schottky barrier detector structures.
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- Russian Physics Journal, 2012, v. 55, n. 2, p. 180, doi. 10.1007/s11182-012-9792-7
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Investigation of the Schottky barriers in aluminum — vitreous semiconductor contacts.
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- Russian Physics Journal, 2005, v. 48, n. 10, p. 1080, doi. 10.1007/s11182-006-0028-6
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A model of the intimate metal-semiconductor Schottky-barrier contact.
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- Russian Physics Journal, 2005, v. 48, n. 10, p. 1085, doi. 10.1007/s11182-006-0029-5
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On the Current-Voltage Characteristic of an Ideal Metal-Semiconductor Schottky-Barrier Contact.
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- Russian Physics Journal, 2005, v. 48, n. 3, p. 312, doi. 10.1007/s11182-005-0125-y
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Measurement of the Metal-Semiconductor Contact Resistance and Control of the Specific Resistance of Semiconductor Films.
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- Russian Physics Journal, 2003, v. 46, n. 7, p. 726, doi. 10.1023/B:RUPJ.0000008205.28283.7d
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Enhanced hydrogen sensitivity of AlGaN/GaN heterojunction gas sensors by GaN-cap layer.
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- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 14, p. 896, doi. 10.1049/el.2018.1167
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GaN planar Schottky barrier diode with cut-off frequency of 902 GHz.
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- Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 16, p. 1408, doi. 10.1049/el.2016.1937
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Ohmic contacts to n-type GaN layer using ECR-sputtered AlN interfacial layer.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 22, p. 1823, doi. 10.1049/el.2015.2037
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Low onset voltage of GaN on Si Schottky barrier diode using various recess depths.
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- Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 16, p. 1164, doi. 10.1049/el.2014.1747
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Offset error reduction using gate-bulk-driven error correction amplifier for low-voltage sub-bandgap reference.
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- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 11, p. 1, doi. 10.1049/el.2013.0765
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- Article