Works matching DE "SEMICONDUCTOR-metal boundaries"

Results: 127

Exploiting Memristive BiFeO3 Bilayer Structures for Compact Sequential Logics.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 22, p. 3357, doi. 10.1002/adfm.201303365

By:

You, Tiangui;
Shuai, Yao;
Luo, Wenbo;
Du, Nan;
Bürger, Danilo;
Skorupa, Ilona;
Hübner, René;
Henker, Stephan;
Mayr, Christian;
Schüffny, René;
Mikolajick, Thomas;
Schmidt, Oliver G.;
Schmidt, Heidemarie

Publication type:

Article

Thermally stable and low-resistance W/Ti/Au contacts to n-type GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 1, p. 9, doi. 10.1007/s10854-008-9586-4

By:

Reddy, V. Rajagopal;
Sang-Ho Kim;
Hyun-Gi Hong;
Sang-Won Yoon;
Jae-Pyoung Ahn;
Tae-Yeon Seong

Publication type:

Article

Application of power loss calculation to estimate the specific contact resistance of the screen-printed silver ohmic contacts of the large area silicon solar cells.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 8, p. 805, doi. 10.1007/s10854-007-9210-z

By:

Vinod, P. N.

Publication type:

Article

Materials chemistry: Illuminated oxides.

Published in:

Nature Chemistry, 2010, v. 2, n. 7, p. 517, doi. 10.1038/nchem.713

By:

Prassides, Kosmas

Publication type:

Article

Orbital magneto-electronic heat capacity of hydrogenated graphene in the presence of dilute charged impurity.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2017, v. 31, n. 8, p. -1, doi. 10.1142/S0217979217500539

By:

Yarmohammadi, Mohsen;
Kazzaz, Houshang Araghi;
Feali, Mohammad Saeed

Publication type:

Article

Electrical Comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic Contacts on Undoped GaN HEMTs Structure with AlN Interlayer.

Published in:

International Journal of High Speed Electronics & Systems, 2007, v. 17, n. 1, p. 85, doi. 10.1142/S0129156407004278

By:

Sun, Yunju;
Eastman, Lester F.

Publication type:

Article

OHMIC CONTACTS TO SIC.

Published in:

International Journal of High Speed Electronics & Systems, 2005, v. 15, n. 4, p. 781, doi. 10.1142/S0129156405003429

By:

ROCCAFORTE, FABRIZIO;
LA VIA, FRANCESCO;
RAINERI, VITO

Publication type:

Article

DESIGN OF HIGH VOLTAGE 4H-SiC SUPERJUNCTION SCHOTTKY RECTIFIERS.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 241, doi. 10.1142/S012915640400296X

By:

Zhu, Lin;
Losee, Peter;
Chow, T. Paul

Publication type:

Article

An Analysis of the Charge-Transport Mechanisms Defining the Reverse Current–Voltage Characteristics of the Metal–GaAs Barriers.

Published in:

Semiconductors, 2001, v. 35, n. 5, p. 539, doi. 10.1134/1.1371618

By:

Bulyarskiı, S. V.;
Zhukov, A. V.

Publication type:

Article

Density-of-states anomaly and tunneling conductance of Au/p-GaAs[sub 0.94]Sb[sub 0.06] contacts near the metal–insulator transition.

Published in:

Semiconductors, 1998, v. 32, n. 12, p. 1270, doi. 10.1134/1.1187613

By:

Allen, T. Yu.;
Nazhmudinov, Kh. G.;
Polyanskaya, T. A.

Publication type:

Article

Effect of hydrogenation on the properties of metal–GaAs Schottky barrier contacts.

Published in:

Semiconductors, 1998, v. 32, n. 11, p. 1196, doi. 10.1134/1.1187591

By:

Bozhkov, V. G.;
Kagadeı, V. A.;
Torkhov, N. A.

Publication type:

Article

The Schottky barrier at a junction between a metal and silicon carbide.

Published in:

Semiconductors, 1997, v. 31, n. 5, p. 506, doi. 10.1134/1.1187202

By:

Davydov, S. Yu.;
Lebedev, A. A.;
Tikhonov, S. K.

Publication type:

Article

Effect of ultrasonic treatment on deformation effects and the structure of local centers in the substrate and in the contact regions of M/n-n[sup +]-GaAs structures (M=Pt, Cr, W).

Published in:

Semiconductors, 1997, v. 31, n. 4, p. 427, doi. 10.1134/1.1187177

By:

Ermolovich, I. B.;
Milenin, V. V.;
Konakova, R. V.;
Primenko, L. N.;
Prokopenko, I. V.;
Gromashevskiı, V. L.

Publication type:

Article

Sunlight-induced resistance changes and their effects on the semiconductor-metal transition behavior of VO film.

Published in:

Journal of Materials Science, 2016, v. 51, n. 17, p. 8233, doi. 10.1007/s10853-016-0098-y

By:

Wang, Minhuan;
Bian, Jiming;
Sun, Hongjun;
Liu, Hongzhu;
Li, Xiaoxuan;
Luo, Yingmin;
Huang, Huolin;
Zhang, Yuzhi

Publication type:

Article

Nonlinear Effects in MSM Structures Based on AgSSe.

Published in:

Journal of Engineering Physics & Thermophysics, 2015, v. 88, n. 4, p. 1030, doi. 10.1007/s10891-015-1281-8

By:

Gadzhieva, G.;
Akhmedov, I.;
Abdul-zade, N.

Publication type:

Article

CO-Sensing Properties of Diode-Type Gas Sensors Employing Anodized Titania and Noble-Metal Electrodes under Hydrogen Atmosphere.

Published in:

Chemosensors, 2018, v. 6, n. 1, p. 7, doi. 10.3390/chemosensors6010007

By:

Hyodo, Takeo;
Morinaga, Naoki;
Shimizu, Yasuhiro

Publication type:

Article

A Comparative Study of Gold Impregnation Methods for Obtaining Metal/Semiconductor Nanophotocatalysts: Direct Turkevich, Inverse Turkevich, and Progressive Heating Methods.

Published in:

Catalysts (2073-4344), 2018, v. 8, n. 4, p. 161, doi. 10.3390/catal8040161

By:

Matamoros-Ambrocio, Mayra;
Ruiz-Peralta, María De Lourdes;
Chigo-Anota, Ernesto;
García-Serrano, Jesús;
Pérez-Centeno, Armando;
Sánchez-Cantú, Manuel;
Rubio-Rosas, Efraín;
Escobedo-Morales, Alejandro

Publication type:

Article

Photoemission Microscopy Investigation of Buried p–n GaAs Homojunctions and Al/n-GaAs Schottky Barriers.

Published in:

Surface Review & Letters, 2002, v. 9, n. 1, p. 249, doi. 10.1142/S0218625X02002154

By:

Barbo, F.;
Bertolo, M.;
Bianco, A.;
Cautero, G.;
Fontana, S.;
Johal, T. K.;
La Rosa, S.;
Purandare, R. C.;
Svetchnikov, N.;
Franciosi, A.;
Orani, D.;
Piccin, M.;
Rubini, S.;
Cimino, R.

Publication type:

Article

Microscopic Understanding and Control of Surfaces and Interfaces of Compound Semiconductors for Mesoscopic Devices.

Published in:

Surface Review & Letters, 2000, v. 7, n. 5/6, p. 583, doi. 10.1142/S0218625X0000066X

By:

Hasegawa, Hideki

Publication type:

Article

MODELACIÓN DE LA CONDUCCIÓN TRANSVERSAL EN COMPÓSITOS SUPERCONDUCTORES.

Published in:

Revista Cubana de Física, 2011, v. 28, n. 1, p. 35

By:

Borroto, A.;
Del Río, L.;
Arronte, M.;
Altshuler, E.

Publication type:

Article

Fabrication of Nickel Contacts for Mg2Si Based Thermoelectric Generators via an Induction Assisted Rapid Monoblock Sintering Technique.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 3, p. 1754, doi. 10.1007/s11664-018-06889-7

By:

Mitra, Kunal;
Mahapatra, S.;
Dasgupta, T.

Publication type:

Article

Non-destructive Detection of Screw Dislocations and the Corresponding Defects Nucleated from Them During SiC Epitaxial Growth and Their Effect on Device Characteristics.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 9, p. 5099, doi. 10.1007/s11664-018-6414-3

By:

Das, H.;
Sunkari, S.;
Naas, H.

Publication type:

Article

Performance Analysis of a Pt/ n-GaN Schottky Barrier UV Detector.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 11, p. 6563, doi. 10.1007/s11664-017-5696-1

By:

Bouzid, F.;
Dehimi, L.;
Pezzimenti, F.

Publication type:

Article

Ohmic Contact of Au/Mo on HgCdTe.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 6, p. 2802, doi. 10.1007/s11664-016-4375-y

By:

Liu, Dan;
Lin, Chun;
Zhou, Songmin;
Hu, Xiaoning

Publication type:

Article

Traps in 4H-SiC Field-Effect Transistors Characterized by Capacitance- and Current-Mode Deep-Level Transient Spectroscopy.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 11, p. 2179, doi. 10.1007/s11664-011-1741-7

By:

Fang, Z.-Q.;
Claflin, B.;
Look, D.;
Chai, F.;
Odekirk, B.

Publication type:

Article

Effects of High-Energy Electron Irradiation on ZnO/Si MSM Photodetectors.

Published in:

Journal of Electronic Materials, 2011, v. 40, n. 4, p. 433, doi. 10.1007/s11664-010-1411-1

By:

Catalfamo, Frank;
Yen, Tingfang;
Yun, Juhyung;
Anderson, Wayne

Publication type:

Article

Thermal Stability of Nitride-Based Diffusion Barriers for Ohmic Contacts to n-GaN.

Published in:

Journal of Electronic Materials, 2007, v. 36, n. 12, p. 1662, doi. 10.1007/s11664-007-0277-3

By:

Voss, L. F.;
Stafford, L.;
Khanna, R.;
Gila, B. P.;
Abernathy, C. R.;
Pearton, S. J.;
Ren, F.;
Kravchenko, I. I.

Publication type:

Article

Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu Multilayer Structures as Schottky Metals for GaAs Diodes.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 7, p. L15, doi. 10.1007/s11664-004-0251-2

By:

Chang, H. C.;
Lee, C. S.;
Chen, S. H.;
Chang, E. Y.;
He, J. Z.

Publication type:

Article

On the conduction mechanisms of Au/(CuO-CuO-PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current-voltage-temperature (I-V-T) characteristics.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 1, p. 159, doi. 10.1007/s10854-017-7900-8

By:

Büyükbaş Uluşan, A.;
Tataroğlu, A.;
Azizian-Kalandaragh, Y.;
Altındal, Ş.

Publication type:

Article

A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss.

Published in:

IET Power Electronics (Wiley-Blackwell), 2021, v. 14, n. 11, p. 2021, doi. 10.1049/pel2.12169

By:

Liu, Sicheng;
Tang, Xiaoyan;
Song, Qingwen;
Wang, Yuehu;
Bai, Ruijie;
Zhang, Yimen;
Zhang, Yuming

Publication type:

Article

DLTS analysis of high resistive edge termination technique-induced defects in GaN-based Schottky barrier diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 9, p. 2364, doi. 10.1002/pssa.201532895

By:

Koné, Sodjan;
Cayrel, Frederic;
Yvon, Arnaud;
Collard, Emmanuel;
Alquier, Daniel

Publication type:

Article

GaN HEMTs with quaternary In0.05Al0.75Ga0.2N Schottky barrier layer.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 889, doi. 10.1002/pssa.201532566

By:

Hwang, Ji Hyun;
Kim, Se‐Mi;
Woo, Jeong Min;
Hong, Sung‐Min;
Jang, Jae‐Hyung

Publication type:

Article

Capacitance roll-off and frequency-dispersion capacitance-conductance phenomena in field plate and guard ring edge-terminated Ni/SiO2/4H-nSiC Schottky barrier diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 1, p. 193, doi. 10.1002/pssa.201532454

By:

Kumar, Vibhor;
Kaminski, Nando;
Maan, Anup Singh;
Akhtar, Jamil

Publication type:

Article

Effect of temperature-bias annealing on the hysteresis and subthreshold behavior of multilayer MoS2 transistors.

Published in:

Physica Status Solidi - Rapid Research Letters, 2016, v. 10, n. 11, p. 797, doi. 10.1002/pssr.201600209

By:

Giannazzo, F.;
Fisichella, G.;
Piazza, A.;
Di Franco, S.;
Greco, G.;
Agnello, S.;
Roccaforte, F.

Publication type:

Article

Problem of fabrication of diamond-based high-power microwave FETs.

Published in:

Journal of Communications Technology & Electronics, 2014, v. 59, n. 4, p. 379, doi. 10.1134/S106422691403005X

By:

Garber, G.;
Dorofeev, A.;
Zubkov, A.;
Kolkovskii, Yu.;
Kontsevoi, Yu.;
Zyablyuk, K.;
Mityagin, A.;
Talipov, N.;
Chucheva, G.

Publication type:

Article

A study of hydrothermally grown ZnO nanorod-based metal-semiconductor-metal UV detectors on glass substrates.

Published in:

Nanomaterials & Nanotechnology, 2017, v. 7, p. 1, doi. 10.1177/1847980417702144

By:

Singh, Shaivalini;
Kumar, Yogesh;
Kumar, Hemant;
Vyas, Sumit;
Periasamy, Chinnamuthan;
Chakrabarti, Parthasarathi;
Jit, Satyabrata;
Park, Si-Hyun

Publication type:

Article

On the temperature dependent current transport mechanisms and barrier inhomogeneity in Au/SnO-PVA/n-Si Schottky barrier diodes.

Published in:

Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 8, p. 1, doi. 10.1007/s00339-017-1168-y

By:

Bilkan, Ç.;
Badali, Y.;
Fotouhi-Shablou, S.;
Azizian-Kalandaragh, Y.;
Altındal, Ş.

Publication type:

Article

Transport characteristics and surface potential distribution of electrically stressed TiO single crystals.

Published in:

Applied Physics A: Materials Science & Processing, 2011, v. 102, n. 4, p. 949, doi. 10.1007/s00339-011-6277-4

By:

Kim, Haeri;
Kim, Dong-Wook

Publication type:

Article

Metal/TiO interfaces for memristive switches.

Published in:

Applied Physics A: Materials Science & Processing, 2011, v. 102, n. 4, p. 785, doi. 10.1007/s00339-011-6265-8

By:

Yang, J.;
Strachan, John;
Miao, Feng;
Zhang, Min-Xian;
Pickett, Matthew;
Yi, Wei;
Ohlberg, Douglas;
Medeiros-Ribeiro, G.;
Williams, R.

Publication type:

Article

First-order phase transition characteristic of the high temperature metal–semiconductor transition in [Ca2CoO3]0.62[CoO2].

Published in:

Applied Physics A: Materials Science & Processing, 2009, v. 94, n. 4, p. 911, doi. 10.1007/s00339-008-4849-8

By:

Cheng, Jinguang;
Sui, Yu;
Wang, Yang;
Wang, Xianjie;
Su, Wenhui

Publication type:

Article

Ohmic contact formation to bulk and heterostructure gallium nitride family semiconductors.

Published in:

Applied Physics A: Materials Science & Processing, 2009, v. 94, n. 3, p. 633, doi. 10.1007/s00339-008-4848-9

By:

Rahman, Faiz;
Sun Xu;
Watson, Ian;
Mutha, Dinesh;
Oxland, Richard;
Johnson, Nigel;
Banerjee, Abhishek;
Wasige, Edward

Publication type:

Article

Formation of thermally stable low-resistance Ti/W/Au ohmic contacts on n-type GaN.

Published in:

Applied Physics A: Materials Science & Processing, 2005, v. 81, n. 3, p. 561, doi. 10.1007/s00339-004-2673-3

By:

Reddy, V. R.;
Kim, S.-H.;
Seong, T.-Y.

Publication type:

Article

EXTRACTION OF ILLUMINATED SOLAR CELL AND SCHOTTKY DIODE PARAMETERS USING A GENETIC ALGORITHM.

Published in:

International Journal of Modern Physics C: Computational Physics & Physical Computation, 2005, v. 16, n. 7, p. 1043, doi. 10.1142/S0129183105007704

By:

SELLAI, A.;
OUENNOUGHI, Z.

Publication type:

Article

Matrix-type effect on the magnetotransport properties of Ni-AlO and Ni-NbO composite systems.

Published in:

Semiconductors, 2016, v. 50, n. 6, p. 709, doi. 10.1134/S1063782616060233

By:

Stognei, O.;
Maliki, A.;
Grebennikov, A.;
Semenenko, K.;
Bulovatskaya, E.;
Sitnikov, A.

Publication type:

Article

Temperature dependences of the contact resistivity in ohmic contacts to n-InN.

Published in:

Semiconductors, 2015, v. 49, n. 4, p. 461, doi. 10.1134/S1063782615040193

By:

Sachenko, A.;
Belyaev, A.;
Boltovets, N.;
Brunkov, P.;
Jmerik, V.;
Ivanov, S.;
Kapitanchuk, L.;
Konakova, R.;
Klad'ko, V.;
Romanets, P.;
Saja, P.;
Safryuk, N.;
Sheremet, V.

Publication type:

Article

The nature of electrical interaction of Schottky contacts.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 1009, doi. 10.1134/S1063782611080227

By:

Torkhov, N.

Publication type:

Article

The role of nonequilibrium charge in generation of the thermopower in extrinsic semiconductors.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 593, doi. 10.1134/S1063782611050174

By:

Konin, A.

Publication type:

Article

The effect of a magnetic field on electrical properties of surface-barrier Bi-Si-Al structures.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 599, doi. 10.1134/S1063782611050241

By:

Pavlyk, B.;
Hrypa, A.;
Slobodzyan, D.;
Lys, R.;
Shykoryak, J.;
Didyk, R.

Publication type:

Article

Current flow mechanism in ohmic contact to n-4 H-SiC.

Published in:

Semiconductors, 2010, v. 44, n. 4, p. 463, doi. 10.1134/S1063782610040093

By:

Blank, T. V.;
Goldberg, Yu. A.;
Posse, E. A.;
Soldatenkov, F. Yu.

Publication type:

Article

Dependence of the mechanism of current flow in the in- n-GaN alloyed ohmic contact on the majority carrier concentration.

Published in:

Semiconductors, 2008, v. 42, n. 11, p. 1315, doi. 10.1134/S1063782608110134

By:

Bessolov, V. N.;
Blank, T. V.;
Goldberg, Yu. A.;
Konstantinov, O. V.;
Posse, E. A.

Publication type:

Article