Works matching DE "SEMICONDUCTOR wafers"

Results: 1259

FABRICATION OF LARGE-AREA SILICON NANOWIRE ARRAYS FOR SOLAR CELLS.

Published in:

International Journal of Nanoscience, 2012, v. 11, n. 6, p. -1, doi. 10.1142/S0219581X12400261

By:

LAI, WUXING;
XU, GUOQIANG;
ZHANG, WEI;
SHI, TIELIN

Publication type:

Article

CHANGES OF RIPPLE MORPHOLOGY OF CLEAVED Si SURFACE BY LOW-ENERGY Ar<sup>+</sup> ION BEAM SPUTTERING.

Published in:

International Journal of Nanoscience, 2011, v. 10, n. 3, p. 495, doi. 10.1142/S0219581X11008319

By:

PAHLOVY, S. A.;
MAHMUD, S. F.;
YANAGIMOTO, K.;
MIYAMOTO, I.

Publication type:

Article

NITRIDATION OF SILICON WITH AMMONIA AND NITROGEN.

Published in:

International Journal of Nanoscience, 2010, v. 9, n. 3, p. 169, doi. 10.1142/S0219581X10006582

By:

CHAUSTOWSKI, RENE;
WANG, YONG;
ZOU, JIN;
HAN, JISHENG;
DIMITRIJEV, SIMA

Publication type:

Article

ELECTROCHEMICAL NANOSTRUCTURING OF SEMICONDUCTOR WAFERS BY CAPILLARY-FORCE-ASSISTED METHOD.

Published in:

International Journal of Nanoscience, 2010, v. 9, n. 3, p. 139, doi. 10.1142/S0219581X10006697

By:

TIMOSHENKO, VICTOR YU.;
GONCHAR, KYRILL A.;
MASLOVA, NATALIA E.;
TAURBAYEV, YERZHAN T.;
TAURBAYEV, TOKHTAR I.

Publication type:

Article

GROUND AND EXCITED STATE PHOTOLUMINESCENCE MAPPING ON InAs/InGaAs QUANTUM DOT STRUCTURES.

Published in:

International Journal of Nanoscience, 2007, v. 6, n. 5, p. 383, doi. 10.1142/S0219581X07004912

By:

TORCHYNSKA, T. V.;
LOZADA, E. VELÁZQUEZ;
DYBIEC, M.;
OSTAPENKO, S.;
ELISEEV, P. G.;
STINTZ, A.;
MALLOY, K. J.;
SIERRA, R. PENA

Publication type:

Article

AN INTENSITY TESTING MODEL AND EXAMINATION OF GOLD–SILICON WAFER BONDING.

Published in:

International Journal of Nanoscience, 2006, v. 5, n. 6, p. 827, doi. 10.1142/S0219581X06005224

By:

XIANG WANG;
WEI WANG;
XUEFENG HE;
DACHENG ZHANG

Publication type:

Article

ION TRACK-BASED NANOELECTRONICS.

Published in:

International Journal of Nanoscience, 2005, v. 4, n. 5/6, p. 965, doi. 10.1142/S0219581X05003930

By:

Fink, D.;
Petrov, A.V.;
Fahrner, W. R.;
Hoppe, K.;
Papaleo, R. M.;
Berdinsky, A. S.;
Chandra, A.;
Zrineh, A.;
Chadderton, L. T.

Publication type:

Article

PHYSICAL AND CHEMICAL NANOLITHOGRAPHY TECHNIQUES:: CHALLENGES AND PROSPECTS.

Published in:

International Journal of Nanoscience, 2005, v. 4, n. 4, p. 575, doi. 10.1142/S0219581X05003644

By:

WEI, J.;
WONG, C. K.

Publication type:

Article

SCANNING PROBE ANALYSIS OF DEFECTS INDUCED BY SLIGHT IRON CONTAMINATION ON THERMALLY OXIDIZED p-TYPE SILICON WAFERS.

Published in:

International Journal of Nanoscience, 2003, v. 2, n. 4/5, p. 349, doi. 10.1142/S0219581X03001383

By:

Chang, M.N.;
Chen, C.Y.;
Pan, F.M.;
Chang, T.Y.;
Lei, T.F.

Publication type:

Article

Bin covering algorithms in the second stage of the lot to order matching problem.

Published in:

Journal of the Operational Research Society, 2001, v. 52, n. 11, p. 1232, doi. 10.1057/palgrave.jors.2601222

By:

Carlyle, M.;
Knutson, K.;
Fowler, J.

Publication type:

Article

Dynamic release control policy for the semiconductor wafer fabrication lines.

Published in:

Journal of the Operational Research Society, 1996, v. 47, n. 12, p. 1516, doi. 10.2307/3010609

By:

Kim, Jongsoo;
Leachman, Robert C.

Publication type:

Article

Non-Destructive Wafer Recycling for Low-Cost Thin-Film Flexible Optoelectronics.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 27, p. 4284, doi. 10.1002/adfm.201400453

By:

Lee, Kyusang;
Zimmerman, Jeramy D.;
Hughes, Tyler W.;
Forrest, Stephen R.

Publication type:

Article

A Multifunction Heterojunction Formed Between Pentacene and a Single-Crystal Silicon Nanomembrane.

Published in:

Advanced Functional Materials, 2013, v. 23, n. 27, p. 3398, doi. 10.1002/adfm.201203309

By:

Seo, Jung‐Hun;
Oh, Tae‐Yeon;
Park, Jungho;
Zhou, Weidong;
Ju, Byeong‐Kwon;
Ma, Zhenqiang

Publication type:

Article

Temperature programmed desorption of F-doped SnO<sub>2</sub> films deposited by inverted pyrosol technique.

Published in:

Journal of Thermal Analysis & Calorimetry, 2006, v. 85, n. 3, p. 811, doi. 10.1007/s10973-006-7556-8

By:

Aukkaravittayapun, S.;
Thanachayanont, C.;
Theapsiri, T.;
Veerasai, W.;
Sawada, Y.;
Kondo, T.;
Tokiwa, S.;
Nishide, T.

Publication type:

Article

Outcome of patients affected by newly diagnosed glioblastoma undergoing surgery assisted by 5-aminolevulinic acid guided resection followed by BCNU wafers implantation: a 3-year follow-up.

Published in:

Journal of Neuro-Oncology, 2017, v. 131, n. 2, p. 331, doi. 10.1007/s11060-016-2301-z

By:

Della Puppa, Alessandro;
Lombardi, Giuseppe;
Rossetto, Marta;
Rustemi, Oriela;
Berti, Franco;
Cecchin, Diego;
Gardiman, Marina;
Rolma, Giuseppe;
Persano, Luca;
Zagonel, Vittorina;
Scienza, Renato

Publication type:

Article

Effect of imaging and catheter characteristics on clinical outcome for patients in the PRECISE study.

Published in:

Journal of Neuro-Oncology, 2011, v. 101, n. 2, p. 267, doi. 10.1007/s11060-010-0255-0

By:

Mueller, Sabine;
Polley, Mei-Yin;
Lee, Benjamin;
Kunwar, Sandeep;
Pedain, Christoph;
Wembacher-Schröder, Eva;
Mittermeyer, Stephan;
Westphal, Manfred;
Sampson, John;
Vogelbaum, Michael;
Croteau, David;
Chang, Susan

Publication type:

Article

Reactive nanolayers for physiologically compatible microsystem packaging.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 6, p. 562, doi. 10.1007/s10854-009-9957-5

By:

Xiaotun Qiu;
Welch, David;
Christen, Jennifer;
Jie Zhu;
Jon Oiler;
Cunjiang Yu;
Ziyu Wang;
Hongyu Yu

Publication type:

Article

Identification and control of SiC polytypes in PVT method.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 4, p. 326, doi. 10.1007/s10854-009-9914-3

By:

Shenghuang Lin;
Zhiming Chen;
Bo Liu;
Lianbi Li;
Xianfeng Feng

Publication type:

Article

Micro-porous silicon structure with low optical reflection.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 4, p. 301, doi. 10.1007/s10854-008-9724-z

By:

Chiung Wei Lin;
Yi Liang Chen;
Yeong Shyang Lee

Publication type:

Article

Fluxless bonding of silicon wafers to molybdenum substrates using electroplated tin-rich solder.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 4, p. 334, doi. 10.1007/s10854-008-9731-0

By:

Wang, Pin J.;
Kim, Jong S.;
Dongwook Kim;
Lee, Chin C.

Publication type:

Article

Hybrid silicon integration.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 3, doi. 10.1007/s10854-007-9418-y

By:

Jones, R.;
Park, H. D.;
Fang, A. W.;
Bowers, J. E.;
Cohen, O.;
Raday, O.;
Paniccia, M. J.

Publication type:

Article

Influence of thickness on nanomechanical behavior of Black Diamond™ low dielectric thin films for interconnect and packaging applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 1, p. 74, doi. 10.1007/s10854-008-9610-8

By:

Sekhar, V. N.;
Chai, T. C.;
Balakumar, S.;
Lu Shen;
Sinha, S. K.;
Tay, A. A. O.;
Seung Wook Yoon

Publication type:

Article

Omega-Scan: an X-ray tool for the characterization of crystal properties.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 351, doi. 10.1007/s10854-007-9479-y

By:

Berger, Hans;
Bradaczek, Hans-Arthur;
Bradaczek, Hans

Publication type:

Article

White beam topography of 300 mm Si wafers.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 269, doi. 10.1007/s10854-007-9480-5

By:

Danilewsky, A. N.;
Wittge, J.;
Rack, A. T.;
Weitkamp, T.;
Simon, R.;
Baumbach, T.;
McNally, P.

Publication type:

Article

Study of in-depth strain variation in ion-irradiated GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 68, doi. 10.1007/s10854-007-9540-x

By:

Herms, Martin;
Zeimer, Ute;
Sonia, Gnanapragasam;
Brunner, Frank;
Richter, Eberhard;
Weyers, Markus;
Tränkle, Günther;
Behm, Thomas;
Irmer, Gert;
Pensl, Gerhard;
Denker, Andrea;
Opitz-Coutureau, Jörg

Publication type:

Article

Microscopic and spectroscopic mapping of dislocation-related photoluminescence in multicrystalline silicon wafers.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 132, doi. 10.1007/s10854-008-9605-5

By:

Inoue, M.;
Sugimoto, H.;
Tajima, M.;
Ohshita, Y.;
Ogura, A.

Publication type:

Article

Radially non-uniform interaction of nitrogen with silicon wafers.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 36, doi. 10.1007/s10854-008-9649-6

By:

Akhmetov, V.;
Kissinger, G.;
Fischer, A.;
Morgenstern, G.;
Ritter, G.;
Kittler, M.

Publication type:

Article

Photoelastic strain measurement in GaP (100) wafers under external stresses.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 83, doi. 10.1007/s10854-008-9651-z

By:

Fukuzawa, M.;
Yamada, M.

Publication type:

Article

Study of nanopipes formed in silicon wafers using helium implantation by SEM, RBS and SIMS methods.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 239, doi. 10.1007/s10854-008-9654-9

By:

Frantskevich, A. V.;
Saad, A. M.;
Mazanik, A. V.;
Frantskevich, N. V.;
Fedotov, A. K.;
Kulinkauskas, V. S.;
Patryn, A. A.

Publication type:

Article

Formation of insulating oxygen-containing layer on the silicon wafer surface using low-temperature hydrogenation.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 273, doi. 10.1007/s10854-008-9704-3

By:

Zinchuk, O.;
Saad, A.;
Drozdov, N.;
Fedotov, A.;
Kobeleva, S.;
Mazanik, A.;
Patryn, A.;
Pilipenko, V.;
Pushkarchuk, A.

Publication type:

Article

Gettering of iron in silicon by boron implantation.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 41, doi. 10.1007/s10854-008-9640-2

By:

Haarahiltunen, A.;
Talvitie, H.;
Savin, H.;
Anttila, O.;
Yli-Koski, M.;
Asghar, M.;
Sinkkonen, J.

Publication type:

Article

Characterization of strained Si wafers by X-ray diffraction techniques.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 189, doi. 10.1007/s10854-008-9641-1

By:

Shimura, Takayoshi;
Kawamura, Kohta;
Asakawa, Masahiro;
Watanabe, Heiji;
Yasutake, Kiyoshi;
Ogura, Atsushi;
Fukuda, Kazunori;
Sakata, Osami;
Kimura, Shigeru;
Edo, Hiroki;
Iida, Satoshi;
Umeno, Masataka

Publication type:

Article

On the characterisation of grown-in defects in Czochralski-grown Si and Ge.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 24, doi. 10.1007/s10854-008-9579-3

By:

Vanhellemont, J.;
Steenbergen, J. Van;
Holsteyns, F.;
Roussel, P.;
Meuris, M.;
Młynarczyk, K.;
Śpiewak, P.;
Geens, W.;
Romandic, I..

Publication type:

Article

Optical characterisation of silicon nitride thin films grown by novel remote plasma sputter deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 285, doi. 10.1007/s10854-007-9513-0

By:

Claudio, Gianfranco;
Calnan, Sonya;
Bass, Kevin;
Boreland, Matt

Publication type:

Article

Electrical characteristics and inhomogeneous barrier analysis of aniline green/ p-Si heterojunctions.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 10, p. 986, doi. 10.1007/s10854-007-9431-1

By:

Güllü, Ö.;
Biber, M.;
Türüt, A.

Publication type:

Article

Profile of the wafer level ECD gold bumps under variable parameters.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 6, p. 563, doi. 10.1007/s10854-007-9387-1

By:

Jing, X. M.;
Engelmann, G.;
Chen, D.;
Wolf, J.;
Ehrmann, O.;
Reichl, H.

Publication type:

Article

Double-polysilicon self-aligned lateral bipolar transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 183, doi. 10.1007/s10854-007-9300-y

By:

Pengpad, P.;
Bagnall, D. M.

Publication type:

Article

Atomic Resolution Phase Contrast Imaging and In-Line Holography Using Variable Voltage and Dose Rate.

Published in:

Microscopy & Microanalysis, 2012, v. 18, n. 5, p. 982, doi. 10.1017/S1431927612001213

By:

Barton, Bastian;
Jiang, Bin;
Song, ChengYu;
Specht, Petra;
Calderon, Hector;
Kisielowski, Christian

Publication type:

Article

Fast and Simple Specimen Preparation for TEM Studies of Oxide Films Deposited on Silicon Wafers.

Published in:: Microscopy & Microanalysis, 2009, v. 15, n. 1, p. 15, doi. 10.1017/S1431927609090011
Publication type:: Article

A nonlinear effect-based ultrasonic flaw detector for detecting cracks.

Published in:

Russian Journal of Nondestructive Testing, 2008, v. 44, n. 12, p. 832, doi. 10.1134/S1061830908120048

By:

Kazakov, V.

Publication type:

Article

An instrument for measuring the electrical resistivity of single-crystal silicon by a four-probe method.

Published in:

Measurement Techniques, 2010, v. 53, n. 5, p. 538, doi. 10.1007/s11018-010-9539-1

By:

Vladimirov, V.;
Grinin, E.;
Sergii, M.;
Shepov, V.

Publication type:

Article

The accuracy of maxillary positioning using digital model planning and 3D printed wafers in bimaxillary orthognathic surgery.

Published in:

Journal of Orthodontics, 2017, v. 44, n. 4, p. 256, doi. 10.1080/14653125.2017.1383708

By:

Cousley, Richard R. J.;
Bainbridge, Mark;
Rossouw, P. Emile

Publication type:

Article

Compacted Feed Potency to Minimize Cattle Feed Adaptation Period on The New Introduced Feed.

Published in:

Indonesian Journal of Agricultural Sciences / Jurnal Ilmu Pertanian Indonesia, 2022, v. 27, n. 3, p. 367, doi. 10.18343/jipi.27.3.367

By:

Despal;
Widjaya, Fensa Eka;
Retnani, Yuli;
Priyanto, Rudy;
Abdullah, Luki

Publication type:

Article

OPTIMIZATION OF TEMPERATURE AND HEATING TIME IN THE PRODUCTION OF FEED WAFER CONTAINING PRILL FAT.

Published in:

Journal of Agroindustrial Technology / Jurnal Teknologi Industri Pertanian, 2024, v. 34, n. 3, p. 211, doi. 10.24961/j.tek.ind.pert.2024.34.3.211

By:

Hasanah, Qorry Nurul;
Wijayanti, Indah;
Retnani, Y.

Publication type:

Article

Optimal Control of a Manufacturing Process That Involves Trial Runs.

Published in:

Management Science, 1993, v. 39, n. 12, p. 1499, doi. 10.1287/mnsc.39.12.1499

By:

Gallego, Guillermo;
Yao, David D.;
Moon, Ilkyeong

Publication type:

Article

Measurement of arsenic and gallium content of gallium arsenide semiconductor waste streams by ICP-MS.

Published in:

Journal of Environmental Science & Health. Part A. Toxic/Hazardous Substances & Environmental Engineering, 2010, v. 45, n. 4, p. 471, doi. 10.1080/10934520903540133

By:

Torrance, Keith W.;
Keenan, Helen E.;
Hursthouse, Andrew S.;
Stirling, David

Publication type:

Article

Ruddlesden-Popper Phase Formation in Pb(Zr,Ti)O3 Thin Films.

Published in:

Ferroelectrics, 2008, v. 370, n. 1, p. 104, doi. 10.1080/00150190802384443

By:

Suchaneck, G.;
Vidyarthi, V. S.;
Gerlach, G.;
Reibold, M.;
Levin, A. A.;
Meyer, D. C.

Publication type:

Article

Fabrication of High Frequency Bulk Acoustic Wave Resonator Using Thinned Single-Crystal Lithium Niobate Layers.

Published in:

Ferroelectrics, 2008, v. 362, n. 1, p. 30, doi. 10.1080/00150190801997872

By:

Gachon, D.;
Courjon, E.;
Martin, G.;
Gauthier-Manuel, L.;
Jeannot, J. -C.;
Daniau, W.;
Ballandras, S.

Publication type:

Article

CORRELATING CHEMICAL AND WATER PURITY TO THE SURFACE METAL ON SILICON WAFER DURING WET CLEANING PROCESS.

Published in:

Chemical Engineering Communications, 2002, v. 189, n. 7, p. 974, doi. 10.1080/00986440213129

By:

Sinha, Drew

Publication type:

Article

Design of UV Laser Parameters on Grooving Depth for Die Attach Film.

Published in:

Sensors & Materials, 2018, v. 30, n. 4, Part 2, p. 885, doi. 10.18494/SAM.2018.1791

By:

Te-Jen Su;
Yi-Feng Chen;
Jui-Chuan Cheng;
Chien-Liang Chiu

Publication type:

Article