Works matching DE "SEMICONDUCTOR wafer bonding"

Results: 140

Innovative Ge-SiO bonding based on an intermediate ultra-thin silicon layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 14, p. 10262, doi. 10.1007/s10854-017-6793-x

By:

Mao, Danfeng;
Ke, Shaoying;
Huang, Donglin;
Lin, Shaoming;
Chen, Songyan;
Li, Cheng;
Wang, Jianyuan;
Huang, Wei;
Lai, Shumei;
Ruan, Yujiao

Publication type:

Article

Simplified low-temperature wafer-level hybrid bonding using pillar bump and photosensitive adhesive for three-dimensional integrated circuit integration.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 12, p. 9091, doi. 10.1007/s10854-017-6642-y

By:

Yao, Mingjun;
Fan, Jun;
Zhao, Ning;
Xiao, Zhiyi;
Yu, Daquan;
Ma, Haitao

Publication type:

Article

Tribological, Thermal, Kinetic, and Surface Microtextural Characterization of Prime p-Type <100> Silicon Wafer CMP for Direct Wafer Bonding Applications.

Published in:

Electronic Materials, 2025, v. 6, n. 1, p. 1, doi. 10.3390/electronicmat6010001

By:

Yap, Michelle;
Yap, Catherine;
Sampurno, Yasa;
Whitener, Glenn;
Keleher, Jason;
Borucki, Len;
Philipossian, Ara

Publication type:

Article

一种硅基三维异构集成 W 波段 T / R 组件的设计.

Published in:

Telecommunication Engineering, 2025, v. 65, n. 4, p. 608, doi. 10.20079/j.issn.1001-893x.240112005

By:

林朋;
高艳红;
冯文杰

Publication type:

Article

SiOC‐Accelerated Graphene Grown on SiO<sub>2</sub>/Si with Tunable Electronic Properties.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 6, p. N.PAG, doi. 10.1002/pssr.201900017

By:

Garman, Paul D.;
Yang, Hao;
Yen, Ying‐Chieh;
Yu, Jianfeng;
Kwak, Kwang Joo;
Malkoc, Veysi;
Talesara, Vishank V.;
Lee, Ly J.;
Lu, Wu

Publication type:

Article

Sn-Cu codeposition from a non-aqueous solution based on ethylene glycol for wafer-bonding applications: direct and pulse electroplating.

Published in:

Transactions of the Institute of Metal Finishing, 2018, v. 96, n. 5, p. 265, doi. 10.1080/00202967.2018.1507329

By:

Pallaro, M.;
Moretto, F. L.;
Panzeri, G.;
Magagnin, L.

Publication type:

Article

Evolution of film curvature profile during light-emitting diode epitaxial growth.

Published in:

Instrumentation Science & Technology, 2016, v. 44, n. 4, p. 343, doi. 10.1080/10739149.2016.1141783

By:

Yan, Dong;
Lee, Shing Man;
Liu, Jianpeng

Publication type:

Article

Long-Wavelength VCSELs: Status and Prospects.

Published in:

Photonics, 2023, v. 10, n. 3, p. 268, doi. 10.3390/photonics10030268

By:

Babichev, Andrey;
Blokhin, Sergey;
Kolodeznyi, Evgenii;
Karachinsky, Leonid;
Novikov, Innokenty;
Egorov, Anton;
Tian, Si-Cong;
Bimberg, Dieter

Publication type:

Article

Quantum dot-integrated GaN light-emitting diodes with resolution beyond the retinal limit.

Published in:

Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-29538-4

By:

Bae, Junho;
Shin, Yuseop;
Yoo, Hyungyu;
Choi, Yongsu;
Lim, Jinho;
Jeon, Dasom;
Kim, Ilsoo;
Han, Myungsoo;
Lee, Seunghyun

Publication type:

Article

1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1276, doi. 10.1134/S1063782620100048

By:

Blokhin, S. A.;
Nevedomsky, S. N.;
Bobrov, M. A.;
Maleev, N. A.;
Blokhin, A. A.;
Kuzmenkov, A. G.;
Vasyl'ev, A. P.;
Rohas, S. S.;
Babichev, A. V.;
Gladyshev, A. G.;
Novikov, I. I.;
Karachinsky, L. Ya.;
Denisov, D. V.;
Voropaev, K. O.;
Ionov, A. S.;
Egorov, A. Yu.;
Ustinov, V. M.

Publication type:

Article

Bonding Energy of Silicon and Sapphire Wafers at Elevated Temperatures of Joining.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 60, doi. 10.1134/S1063782619010238

By:

Tyschenko, I. E.;
Zhanaev, E. D.;
Popov, V. P.

Publication type:

Article

Effect of Bonding Time on Microstructure and Shear Property of Cu/In-50Ag/Cu TLP Solder Joints.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 7, p. 4300, doi. 10.1007/s11664-020-08149-z

By:

Yang, Li;
Qiao, Jian;
Zhang, Yao Cheng;
Gao, Hui Ming;
Yang, Yao;
Xu, Feng

Publication type:

Article

Al-Ge Diffusion Bonding for Hermetic Sealing Application.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 7, p. 2387, doi. 10.1007/s11664-015-3683-y

By:

Chidambaram, Vivek;
Wickramanayaka, Sunil

Publication type:

Article

Dynamics of SiO Buried Layer Removal from Si-SiO-Si and Si-SiO-SiC Bonded Substrates by Annealing in Ar.

Published in:

Journal of Electronic Materials, 2014, v. 43, n. 2, p. 541, doi. 10.1007/s11664-013-2861-z

By:

Li, L.-G.;
Rubino, S.;
Vallin, Ö.;
Olsson, J.

Publication type:

Article

Optimized Cu-Sn Wafer-Level Bonding Using Intermetallic Phase Characterization.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 12, p. 3582, doi. 10.1007/s11664-013-2711-z

By:

Luu, Thi-Thuy;
Duan, Ani;
Aasmundtveit, Knut E.;
Hoivik, Nils

Publication type:

Article

Room-temperature bonding strategy by ultra-high isostatic pressing for a heterogeneous interconnection architecture.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 3, p. 1480, doi. 10.1007/s10854-021-07656-x

By:

Guo, Fen;
Li, Tuo;
Man, Hong Tao;
Liu, Kai;
Zou, Xiao Feng;
Wang, Xiao Liang

Publication type:

Article

Study on crystallization mechanism of GeSn interlayer for low temperature Ge/Si bonding.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 8, p. 10835, doi. 10.1007/s10854-021-05741-9

By:

Wang, Ziwei;
Zhang, Ziqi;
Huang, Donglin;
Ke, Shaoying;
Li, Zongpei;
Huang, Wei;
Wang, Jianyuan;
Li, Cheng;
Chen, Songyan

Publication type:

Article

用于压电单晶薄膜晶圆制备的键合面清洗技术研究.

Published in:

Piezoelectrics & Acoustooptics, 2024, v. 46, n. 5, p. 700, doi. 10.11977/j.issn.1004-2474.2024.05.015

By:

刘善群;
丁雨憧;
陈哲明;
石自彬;
龙勇;
邹少红;
庾桂秋;
张莉

Publication type:

Article

声表面波器件晶圆键合工艺研究.

Published in:

Piezoelectrics & Acoustooptics, 2020, v. 42, n. 3, p. 361, doi. 10.11977/j.issn.1004-2474.2020.03.018

By:

卢丹丹;
米佳;
彭兴文;
谭昕怡;
金中

Publication type:

Article

布喇格反射型宽带单晶薄膜体声波滤波器.

Published in:

Piezoelectrics & Acoustooptics, 2020, v. 42, n. 3, p. 303, doi. 10.11977/j.issn.1004-2474.2020.03.005

By:

王晓学;
帅篧;
田本朗;
白晓园;
吕露;
简珂;
罗文博;
吴传贵;
张万里

Publication type:

Article

Inverse analysis for damage detection in a rod using EMI method.

Published in:

Mechanics of Advanced Materials & Structures, 2023, v. 30, n. 1, p. 168, doi. 10.1080/15376494.2021.2010845

By:

Qiao, Liang;
Yan, Wei;
Cao, Shuyao

Publication type:

Article

Room temperature wafer bonding through conversion of polysilazane into SiO2.

Published in:

Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-51800-6

By:

Takeuchi, Kai;
Suga, Tadatomo;
Higurashi, Eiji

Publication type:

Article

First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202300953

By:

Li, Hanchao;
Xie, Hanlin;
Wang, Yue;
Yulia, Lekina;
Ranjan, Kumud;
Singh, Navab;
Chung, Surasit;
Lee, Kenneth E.;
Arulkumaran, Subramaniam;
Ing Ng, Geok

Publication type:

Article

Large‐Diameter III–V on Si Substrates by the Smart Cut Process: The 200 mm InP Film on Si Substrate Example.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 4, p. 1, doi. 10.1002/pssa.202100543

By:

Ghyselen, Bruno;
Navone, Christelle;
Martinez, Muriel;
Sanchez, Loic;
Lecouvey, Christophe;
Montmayeul, Brigitte;
Servant, Florence;
Maitrejean, Sylvain;
Radu, Ionut

Publication type:

Article

Large‐Diameter III–V on Si Substrates by the Smart Cut Process: The 200 mm InP Film on Si Substrate Example.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 4, p. 1, doi. 10.1002/pssa.202100543

By:

Ghyselen, Bruno;
Navone, Christelle;
Martinez, Muriel;
Sanchez, Loic;
Lecouvey, Christophe;
Montmayeul, Brigitte;
Servant, Florence;
Maitrejean, Sylvain;
Radu, Ionut

Publication type:

Article

First Demonstration of a High‐Speed and High‐Power‐Tolerance InGaAs/Si Photodiode Fabricated by Atomic Diffusion Bonding.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 3, p. 1, doi. 10.1002/pssa.202000395

By:

Yamada, Yuki;
Nada, Masahiro;
Uomoto, Miyuki;
Shimatsu, Takehito;
Nakajima, Fumito;
Matsuzaki, Hideaki

Publication type:

Article

Research Toward a Heterogeneously Integrated InGaN Laser on Silicon.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900770

By:

Kamei, Toshihiro;
Kamikawa, Takeshi;
Araki, Masahiro;
DenBaars, Steven P.;
Nakamura, Shuji;
Bowers, John E.

Publication type:

Article

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO<sub>2</sub>/Si Substrate.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900523

By:

Besancon, Claire;
Vaissiere, Nicolas;
Dupré, Cécilia;
Fournel, Frank;
Sanchez, Loic;
Jany, Christophe;
David, Sylvain;
Bassani, Franck;
Baron, Thierry;
Decobert, Jean

Publication type:

Article

A heterogeneously integrated lithium niobate-on-silicon nitride photonic platform.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-39047-7

By:

Churaev, Mikhail;
Wang, Rui Ning;
Riedhauser, Annina;
Snigirev, Viacheslav;
Blésin, Terence;
Möhl, Charles;
Anderson, Miles H.;
Siddharth, Anat;
Popoff, Youri;
Drechsler, Ute;
Caimi, Daniele;
Hönl, Simon;
Riemensberger, Johann;
Liu, Junqiu;
Seidler, Paul;
Kippenberg, Tobias J.

Publication type:

Article

Analysis of the Bowing Phenomenon for Thin c-Si Solar Cells using Partially Processed c-Si Solar Cells.

Published in:

Energies (19961073), 2019, v. 12, n. 9, p. 1593, doi. 10.3390/en12091593

By:

Lim, Jong Rok;
Kim, Sihan;
Ahn, Hyung-Keun;
Song, Hee-Eun;
Kang, Gi Hwan

Publication type:

Article

Thermal Analysis of Si/GaAs Bonding Wafers and Mitigation Strategies of the Bonding Stresses.

Published in:

Advances in Materials Science & Engineering, 2017, p. 1, doi. 10.1155/2017/4903924

By:

Qiu, Yuanying;
Qiu, Xun;
Guo, Xianghu;
Wang, Dian;
Sun, Lijie

Publication type:

Article

A Three-Dimensional DRAM Using Floating Body Capacitance Cells in an FD-SOI Process.

Published in:

Radioengineering, 2013, v. 22, n. 4, p. 975

By:

Xuelian LIU;
ZIA, Aamir

Publication type:

Article

in brief.

Published in:: 2017
Publication type:: Abstract

On-Chip Broadband, Compact TM Mode Mach–Zehnder Optical Isolator Based on InP-on-Insulator Platforms.

Published in:

Nanomaterials (2079-4991), 2024, v. 14, n. 8, p. 709, doi. 10.3390/nano14080709

By:

Chen, Wan-Ting;
Liu, Li;
Zhao, Jia;
Zhang, Chen

Publication type:

Article

The Design, Fabrication and Characterization of Grating Couplers for SiGe Photonic Integration Employing a Reflective Back Mirror.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 21, p. 3789, doi. 10.3390/nano12213789

By:

Huang, Qiang;
Zhang, Yi;
Tang, Jie;
Sun, Junqiang

Publication type:

Article

The 3.4 GHz BAW RF Filter Based on Single Crystal AlN Resonator for 5G Application.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 17, p. 3082, doi. 10.3390/nano12173082

By:

Ding, Rui;
Xuan, Weipeng;
Dong, Shurong;
Zhang, Biao;
Gao, Feng;
Liu, Gang;
Zhang, Zichao;
Jin, Hao;
Luo, Jikui

Publication type:

Article

GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 1, p. 134, doi. 10.3390/nano12010134

By:

Chen, Wen;
Feng, Meixin;
Tang, Yongjun;
Wang, Jian;
Liu, Jianxun;
Sun, Qian;
Gao, Xumin;
Wang, Yongjin;
Yang, Hui

Publication type:

Article

Nanostructured Materials for Solar Cell Applications.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 1, p. 26, doi. 10.3390/nano12010026

By:

Tanabe, Katsuaki

Publication type:

Article

Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review.

Published in:

Nanomaterials (2079-4991), 2021, v. 11, n. 4, p. 842, doi. 10.3390/nano11040842

By:

Gong, Zheng;
Cole, Matt

Publication type:

Article

Wavelength-Conversion-Material-Mediated Semiconductor Wafer Bonding for Smart Optoelectronic Interconnects.

Published in:

Nanomaterials (2079-4991), 2019, v. 9, n. 12, p. 1742, doi. 10.3390/nano9121742

By:

Kishibe, Kodai;
Hirata, Soichiro;
Inoue, Ryoichi;
Yamashita, Tatsushi;
Tanabe, Katsuaki

Publication type:

Article

InGaAs-OI Substrate Fabrication on a 300 mm Wafer.

Published in:

Journal of Low Power Electronics & Applications, 2016, v. 6, n. 4, p. 19, doi. 10.3390/jlpea6040019

By:

Sollier, Sebastien;
Widiez, Julie;
Gaudin, Gweltaz;
Mazen, Frederic;
Baron, Thierry;
Martin, Mickail;
Roure, Marie-Christine;
Besson, Pascal;
Morales, Christophe;
Beche, Elodie;
Fournel, Frank;
Favier, Sylvie;
Salaun, Amelie;
Gergaud, Patrice;
Cordeau, Maryline;
Veytizou, Christellle;
Ecarnot, Ludovic;
Delprat, Daniel;
Radu, Ionut;
Signamarcheix, Thomas

Publication type:

Article

Investigation of OP-GaP Grown on OP-GaAs Templates Using Nondestructive Reciprocal Space Mapping.

Published in:

Crystals (2073-4352), 2023, v. 13, n. 2, p. 168, doi. 10.3390/cryst13020168

By:

Manavaimaran, Balaji;
Strömberg, Axel;
Tassev, Vladimir L.;
Vangala, Shivashankar R.;
Bailly, Myriam;
Grisard, Arnaud;
Gérard, Bruno;
Lourdudoss, Sebastian;
Sun, Yan-Ting

Publication type:

Article

Review of Low-Temperature Bonding Technologies and Their Application in Optoelectronic Devices.

Published in:

Electronics & Communications in Japan, 2016, v. 99, n. 3, p. 63, doi. 10.1002/ecj.11805

By:

HIGURASHI, EIJI;
SUGA, TADATOMO

Publication type:

Article

Classification and Size Estimation of Wafer Defects by Using Scattered Light Distribution.

Published in:

Electronics & Communications in Japan, 2015, v. 98, n. 6, p. 36, doi. 10.1002/ecj.11706

By:

SUGIHARA, YOSHIHIKO;
HONDA, TOSHIFUMI;
URANO, YUTA;
WATANABE, MASAHIRO;
NOGUCHI, SO;
IGARASHI, HAJIME

Publication type:

Article

Aerosol Jet Printing of a Benzocyclobutene‐Based Ink as Adhesive Material for Wafer Bonding Application.

Published in:

Advanced Materials Interfaces, 2023, v. 10, n. 5, p. 1, doi. 10.1002/admi.202202183

By:

Iervolino, Filippo;
Baldini, Angelica;
Gelmi, Ilaria;
Castoldi, Laura;
Suriano, Raffaella;
Levi, Marinella

Publication type:

Article

Room Temperature Wafer Bonding of Glass Using Aluminum Oxide Intermediate Layer.

Published in:

Advanced Materials Interfaces, 2021, v. 8, n. 5, p. 1, doi. 10.1002/admi.202001741

By:

Takeuchi, Kai;
Mu, Fengwen;
Matsumoto, Yoshiie;
Suga, Tadatomo

Publication type:

Article

Wafer Bonding: Solution‐Processed‐ZnO‐Mediated Semiconductor Bonding with High Mechanical Stability, Electrical Conductivity, Optical Transparency, and Roughness Tolerance (Adv. Mater. Interfaces 22/2019).

Published in:

Advanced Materials Interfaces, 2019, v. 6, n. 22, p. N.PAG, doi. 10.1002/admi.201970137

By:

Yamashita, Tatsushi;
Hirata, Soichiro;
Inoue, Ryoichi;
Kishibe, Kodai;
Tanabe, Katsuaki

Publication type:

Article

A True Process-Heterogeneous Stacked Embedded DRAM Structure Based on Wafer-Level Hybrid Bonding.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 5, p. 1077, doi. 10.3390/electronics12051077

By:

Wang, Song;
Jiang, Xiping;
Bai, Fujun;
Xiao, Wenwu;
Long, Xiaodong;
Ren, Qiwei;
Kang, Yi

Publication type:

Article

High-Performance InGaAs HEMTs on Si Substrates for RF Applications.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 2, p. 259, doi. 10.3390/electronics11020259

By:

Wang, Bo;
Wang, Yanfu;
Feng, Ruize;
Wei, Haomiao;
Cao, Shurui;
Liu, Tong;
Liu, Xiaoyu;
Li, Haiou;
Ding, Peng;
Jin, Zhi

Publication type:

Article

Q-Function-Based Traffic- and Thermal-Aware Adaptive Routing for 3D Network-on-Chip.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 3, p. 392, doi. 10.3390/electronics9030392

By:

Lee, Seung Chan;
Han, Tae Hee

Publication type:

Article