Works matching DE "SEMICONDUCTOR wafer bonding"

Results: 143

InGaAs-Si 基光电探测器异质集成技术研究进展.

Published in:

Laser Technology, 2025, v. 49, n. 4, p. 617, doi. 10.7510/jgjs.issn.1001-3806.2025.04.021

By:

李宛励;
周鑫;
孔繁林;
陈庆敏;
梁丕刚;
舒域鑫;
代千;
宋海智

Publication type:

Article

The Effects of Semiconductor Wafer Storage Methods on Aluminum Fluoride Crystal Growth on Aluminum Wire Bond Pads.

Published in:

Journal of Microelectronic & Electronic Packaging, 2025, v. 22, n. 2, p. 21, doi. 10.4071/001c.138519

By:

Marks, Michael Raj

Publication type:

Article

First Demonstration of High‐Frequency InAlN/GaN High‐Electron‐Mobility Transistor Using GaN‐on‐Insulator Technology via 200 mm Wafer Bonding.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202300953

By:

Li, Hanchao;
Xie, Hanlin;
Wang, Yue;
Yulia, Lekina;
Ranjan, Kumud;
Singh, Navab;
Chung, Surasit;
Lee, Kenneth E.;
Arulkumaran, Subramaniam;
Ing Ng, Geok

Publication type:

Article

Large‐Diameter III–V on Si Substrates by the Smart Cut Process: The 200 mm InP Film on Si Substrate Example.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 4, p. 1, doi. 10.1002/pssa.202100543

By:

Ghyselen, Bruno;
Navone, Christelle;
Martinez, Muriel;
Sanchez, Loic;
Lecouvey, Christophe;
Montmayeul, Brigitte;
Servant, Florence;
Maitrejean, Sylvain;
Radu, Ionut

Publication type:

Article

Large‐Diameter III–V on Si Substrates by the Smart Cut Process: The 200 mm InP Film on Si Substrate Example.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 4, p. 1, doi. 10.1002/pssa.202100543

By:

Ghyselen, Bruno;
Navone, Christelle;
Martinez, Muriel;
Sanchez, Loic;
Lecouvey, Christophe;
Montmayeul, Brigitte;
Servant, Florence;
Maitrejean, Sylvain;
Radu, Ionut

Publication type:

Article

First Demonstration of a High‐Speed and High‐Power‐Tolerance InGaAs/Si Photodiode Fabricated by Atomic Diffusion Bonding.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 3, p. 1, doi. 10.1002/pssa.202000395

By:

Yamada, Yuki;
Nada, Masahiro;
Uomoto, Miyuki;
Shimatsu, Takehito;
Nakajima, Fumito;
Matsuzaki, Hideaki

Publication type:

Article

Research Toward a Heterogeneously Integrated InGaN Laser on Silicon.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 7, p. 1, doi. 10.1002/pssa.201900770

By:

Kamei, Toshihiro;
Kamikawa, Takeshi;
Araki, Masahiro;
DenBaars, Steven P.;
Nakamura, Shuji;
Bowers, John E.

Publication type:

Article

Epitaxial Growth of High‐Quality AlGaInAs‐Based Active Structures on a Directly Bonded InP‐SiO2/Si Substrate.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2020, v. 217, n. 3, p. N.PAG, doi. 10.1002/pssa.201900523

By:

Besancon, Claire;
Vaissiere, Nicolas;
Dupré, Cécilia;
Fournel, Frank;
Sanchez, Loic;
Jany, Christophe;
David, Sylvain;
Bassani, Franck;
Baron, Thierry;
Decobert, Jean

Publication type:

Article

Effect of NH4OH Treatment on Plasma-Assisted InP/Al2O3/SOI Direct Wafer Bonding.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 5, p. 1, doi. 10.1002/pssa.201700739

By:

Kewei Gong;
Changzheng Sun;
Bing Xiong;
Yanjun Han;
Zhibiao Hao;
Jian Wang;
Lai Wang;
Hongtao Li

Publication type:

Article

Effect of NH4OH Treatment on Plasma‐Assisted InP/Al2O3/SOI Direct Wafer Bonding.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 5, p. 1, doi. 10.1002/pssa.201700739

By:

Gong, Kewei;
Sun, Changzheng;
Xiong, Bing;
Han, Yanjun;
Hao, Zhibiao;
Wang, Jian;
Wang, Lai;
Li, Hongtao

Publication type:

Article

Fabrication of ion-sliced lithium niobate slabs using helium ion implantation and Cu-Sn bonding.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 10, p. 2416, doi. 10.1002/pssa.201431138

By:

Xiang, Bing‐Xi;
Guan, Jing;
Jiao, Yang;
Wang, Lei

Publication type:

Article

Innovative Ge-SiO bonding based on an intermediate ultra-thin silicon layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 14, p. 10262, doi. 10.1007/s10854-017-6793-x

By:

Mao, Danfeng;
Ke, Shaoying;
Huang, Donglin;
Lin, Shaoming;
Chen, Songyan;
Li, Cheng;
Wang, Jianyuan;
Huang, Wei;
Lai, Shumei;
Ruan, Yujiao

Publication type:

Article

Simplified low-temperature wafer-level hybrid bonding using pillar bump and photosensitive adhesive for three-dimensional integrated circuit integration.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 12, p. 9091, doi. 10.1007/s10854-017-6642-y

By:

Yao, Mingjun;
Fan, Jun;
Zhao, Ning;
Xiao, Zhiyi;
Yu, Daquan;
Ma, Haitao

Publication type:

Article

Sheet Resistance Optimization in (Al)GaInP Solar Cells for Concentrator Quadruple–Junction Solar Cells.

Published in:

Solar RRL, 2024, v. 8, n. 10, p. 1, doi. 10.1002/solr.202400150

By:

Klitzke, Malte;
Schygulla, Patrick;
Schön, Jonas;
Höhn, Oliver;
Siefer, Gerald;
Helmers, Henning;
Dimroth, Frank;
Lackner, David

Publication type:

Article

Two‐Terminal Direct Wafer‐Bonded GaInP/AlGaAs//Si Triple‐Junction Solar Cell with AM1.5g Efficiency of 34.1%.

Published in:

Solar RRL, 2020, v. 4, n. 9, p. 1, doi. 10.1002/solr.202000210

By:

Lackner, David;
Höhn, Oliver;
Müller, Ralph;
Beutel, Paul;
Schygulla, Patrick;
Hauser, Hubert;
Predan, Felix;
Siefer, Gerald;
Schachtner, Michael;
Schön, Jonas;
Benick, Jan;
Hermle, Martin;
Dimroth, Frank

Publication type:

Article

声表面波器件晶圆键合工艺研究.

Published in:

Piezoelectrics & Acoustooptics, 2020, v. 42, n. 3, p. 361, doi. 10.11977/j.issn.1004-2474.2020.03.018

By:

卢丹丹;
米佳;
彭兴文;
谭昕怡;
金中

Publication type:

Article

布喇格反射型宽带单晶薄膜体声波滤波器.

Published in:

Piezoelectrics & Acoustooptics, 2020, v. 42, n. 3, p. 303, doi. 10.11977/j.issn.1004-2474.2020.03.005

By:

王晓学;
帅篧;
田本朗;
白晓园;
吕露;
简珂;
罗文博;
吴传贵;
张万里

Publication type:

Article

Long-Wavelength VCSELs: Status and Prospects.

Published in:

Photonics, 2023, v. 10, n. 3, p. 268, doi. 10.3390/photonics10030268

By:

Babichev, Andrey;
Blokhin, Sergey;
Kolodeznyi, Evgenii;
Karachinsky, Leonid;
Novikov, Innokenty;
Egorov, Anton;
Tian, Si-Cong;
Bimberg, Dieter

Publication type:

Article

On-Chip Broadband, Compact TM Mode Mach–Zehnder Optical Isolator Based on InP-on-Insulator Platforms.

Published in:

Nanomaterials (2079-4991), 2024, v. 14, n. 8, p. 709, doi. 10.3390/nano14080709

By:

Chen, Wan-Ting;
Liu, Li;
Zhao, Jia;
Zhang, Chen

Publication type:

Article

The Design, Fabrication and Characterization of Grating Couplers for SiGe Photonic Integration Employing a Reflective Back Mirror.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 21, p. 3789, doi. 10.3390/nano12213789

By:

Huang, Qiang;
Zhang, Yi;
Tang, Jie;
Sun, Junqiang

Publication type:

Article

The 3.4 GHz BAW RF Filter Based on Single Crystal AlN Resonator for 5G Application.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 17, p. 3082, doi. 10.3390/nano12173082

By:

Ding, Rui;
Xuan, Weipeng;
Dong, Shurong;
Zhang, Biao;
Gao, Feng;
Liu, Gang;
Zhang, Zichao;
Jin, Hao;
Luo, Jikui

Publication type:

Article

GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 1, p. 134, doi. 10.3390/nano12010134

By:

Chen, Wen;
Feng, Meixin;
Tang, Yongjun;
Wang, Jian;
Liu, Jianxun;
Sun, Qian;
Gao, Xumin;
Wang, Yongjin;
Yang, Hui

Publication type:

Article

Nanostructured Materials for Solar Cell Applications.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 1, p. 26, doi. 10.3390/nano12010026

By:

Tanabe, Katsuaki

Publication type:

Article

Layer-Scale and Chip-Scale Transfer Techniques for Functional Devices and Systems: A Review.

Published in:

Nanomaterials (2079-4991), 2021, v. 11, n. 4, p. 842, doi. 10.3390/nano11040842

By:

Gong, Zheng;
Cole, Matt

Publication type:

Article

Wavelength-Conversion-Material-Mediated Semiconductor Wafer Bonding for Smart Optoelectronic Interconnects.

Published in:

Nanomaterials (2079-4991), 2019, v. 9, n. 12, p. 1742, doi. 10.3390/nano9121742

By:

Kishibe, Kodai;
Hirata, Soichiro;
Inoue, Ryoichi;
Yamashita, Tatsushi;
Tanabe, Katsuaki

Publication type:

Article

A heterogeneously integrated lithium niobate-on-silicon nitride photonic platform.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-39047-7

By:

Churaev, Mikhail;
Wang, Rui Ning;
Riedhauser, Annina;
Snigirev, Viacheslav;
Blésin, Terence;
Möhl, Charles;
Anderson, Miles H.;
Siddharth, Anat;
Popoff, Youri;
Drechsler, Ute;
Caimi, Daniele;
Hönl, Simon;
Riemensberger, Johann;
Liu, Junqiu;
Seidler, Paul;
Kippenberg, Tobias J.

Publication type:

Article

Temporary Wafer Bonding Materials with Mechanical and Laser Debonding Technologies for Semiconductor Device Processing.

Published in:

Journal of Microelectronic & Electronic Packaging, 2017, v. 14, n. 1, p. 39, doi. 10.4071/imaps.349121

By:

Xiao Liu;
Qi Wu;
Dongshun Bai;
Stanley, Trevor;
Lee, Alvin;
Su, Jay;
Huang, Baron

Publication type:

Article

Analysis of the Bowing Phenomenon for Thin c-Si Solar Cells using Partially Processed c-Si Solar Cells.

Published in:

Energies (19961073), 2019, v. 12, n. 9, p. 1593, doi. 10.3390/en12091593

By:

Lim, Jong Rok;
Kim, Sihan;
Ahn, Hyung-Keun;
Song, Hee-Eun;
Kang, Gi Hwan

Publication type:

Article

Novel fabrication technique for high-resolution spherical crystal analyzers using a microporous aluminium base.

Published in:

Journal of Synchrotron Radiation, 2022, v. 29, n. 3, p. 749, doi. 10.1107/S1600577522001886

By:

Said, Ayman H.;
Jung Ho Kim;
Aran, Emily K.;
Thomas Gog

Publication type:

Article

1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy.

Published in:

Semiconductors, 2020, v. 54, n. 10, p. 1276, doi. 10.1134/S1063782620100048

By:

Blokhin, S. A.;
Nevedomsky, S. N.;
Bobrov, M. A.;
Maleev, N. A.;
Blokhin, A. A.;
Kuzmenkov, A. G.;
Vasyl'ev, A. P.;
Rohas, S. S.;
Babichev, A. V.;
Gladyshev, A. G.;
Novikov, I. I.;
Karachinsky, L. Ya.;
Denisov, D. V.;
Voropaev, K. O.;
Ionov, A. S.;
Egorov, A. Yu.;
Ustinov, V. M.

Publication type:

Article

Bonding Energy of Silicon and Sapphire Wafers at Elevated Temperatures of Joining.

Published in:

Semiconductors, 2019, v. 53, n. 1, p. 60, doi. 10.1134/S1063782619010238

By:

Tyschenko, I. E.;
Zhanaev, E. D.;
Popov, V. P.

Publication type:

Article

Selective Ultrasonic Gravimetric Sensors Based on Capacitive Micromachined Ultrasound Transducer Structure—A Review.

Published in:

Sensors (14248220), 2020, v. 20, n. 12, p. 3554, doi. 10.3390/s20123554

By:

Barauskas, Dovydas;
Dzikaras, Mindaugas;
Bieliauskas, Dovydas;
Pelenis, Donatas;
Vanagas, Gailius;
Viržonis, Darius

Publication type:

Article

On-Chip Non-Dispersive Infrared CO2 Sensor Based on an Integrating Cylinder †.

Published in:

Sensors (14248220), 2019, v. 19, n. 19, p. 4260, doi. 10.3390/s19194260

By:

Jia, Xiaoning;
Roels, Joris;
Baets, Roel;
Roelkens, Gunther

Publication type:

Article

Research on a 3D Encapsulation Technique for Capacitive MEMS Sensors Based on Through Silicon Via †.

Published in:

Sensors (14248220), 2019, v. 19, n. 1, p. 93, doi. 10.3390/s19010093

By:

Zhang, Meng;
Yang, Jian;
He, Yurong;
Yang, Fan;
Yang, Fuhua;
Han, Guowei;
Si, Chaowei;
Ning, Jin

Publication type:

Article

High-QWafer Level Package Based on Modified Tri-Layer Anodic Bonding and High Performance Getter and Its Evaluation for Micro Resonant Pressure Sensor.

Published in:

Sensors (14248220), 2017, v. 17, n. 3, p. 599, doi. 10.3390/s17030599

By:

Liying Wang;
Xiaohui Du;
Lingyun Wang;
Zhanhao Xu;
Chenying Zhang;
Dandan Gu

Publication type:

Article

Room-temperature bonding strategy by ultra-high isostatic pressing for a heterogeneous interconnection architecture.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 3, p. 1480, doi. 10.1007/s10854-021-07656-x

By:

Guo, Fen;
Li, Tuo;
Man, Hong Tao;
Liu, Kai;
Zou, Xiao Feng;
Wang, Xiao Liang

Publication type:

Article

Study on crystallization mechanism of GeSn interlayer for low temperature Ge/Si bonding.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 8, p. 10835, doi. 10.1007/s10854-021-05741-9

By:

Wang, Ziwei;
Zhang, Ziqi;
Huang, Donglin;
Ke, Shaoying;
Li, Zongpei;
Huang, Wei;
Wang, Jianyuan;
Li, Cheng;
Chen, Songyan

Publication type:

Article

Thin ceramic PZT dual- and multi-frequency pMUT arrays for photoacoustic imaging.

Published in:

Microsystems & Nanoengineering, 2022, v. 8, n. 1, p. 1, doi. 10.1038/s41378-022-00449-0

By:

Zheng, Qincheng;
Wang, Haoran;
Yang, Hao;
Jiang, Huabei;
Chen, Zhenfang;
Lu, Yao;
Feng, Philip X.-L.;
Xie, Huikai

Publication type:

Article

All-SiC Fiber-Optic Sensor Based on Direct Wafer Bonding for High Temperature Pressure Sensing.

Published in:

Photonic Sensors, 2022, v. 12, n. 2, p. 130, doi. 10.1007/s13320-021-0640-7

By:

Liang, Ting;
Li, Wangwang;
Lei, Cheng;
Li, Yongwei;
Li, Zhiqiang;
Xiong, Jijun

Publication type:

Article

SiOC‐Accelerated Graphene Grown on SiO2/Si with Tunable Electronic Properties.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 6, p. N.PAG, doi. 10.1002/pssr.201900017

By:

Garman, Paul D.;
Yang, Hao;
Yen, Ying‐Chieh;
Yu, Jianfeng;
Kwak, Kwang Joo;
Malkoc, Veysi;
Talesara, Vishank V.;
Lee, Ly J.;
Lu, Wu

Publication type:

Article

Prototype of Parallel Plate Type Fast Atom Beam Source and its Improvement of Irradiation Characteristics.

Published in:

International Journal of Automation Technology, 2024, v. 18, n. 4, p. 513, doi. 10.20965/ijat.2024.p0513

By:

Kato, Taisei;
Morisaki, Ryo;
Yamazaki, Takahiro;
Oka, Chiemi;
Sakurai, Junpei;
Hata, Seiichi

Publication type:

Article

High‐Efficiency Flexible GaAs/InGaAs Dual‐Junction Solar Cells Fabricated by Metallic Nanoparticle‐Based Wafer Bonding.

Published in:

Small Structures, 2025, v. 6, n. 2, p. 1, doi. 10.1002/sstr.202400421

By:

Kim, Yeongho;
Park, Suho;
Nguyen, Thuy Thi;
Jeon, Jiyeon;
Chun, Byong Sun;
Lee, Sang Jun

Publication type:

Article

Single Crystalline GaN Tiles Grown on Si (111) Substrates by Confined Lateral Guided Growth to Eliminate Wafer Bowing.

Published in:

Advanced Materials Interfaces, 2015, v. 2, n. 8, p. n/a, doi. 10.1002/admi.201500014

By:

Song, Jie;
Chen, Danti;
Leung, Benjamin;
Zhang, Yu;
Han, Jung

Publication type:

Article

Special Issue "Building Three-Dimensional Integrated Circuits and Microsystems".

Published in:

Processes, 2023, v. 11, n. 3, p. 816, doi. 10.3390/pr11030816

By:

Zhu, Zhiyuan;
Zhang, Sixiang;
Ma, Shenglin;
Liu, Ziyu

Publication type:

Article

Al-Sn-Al Bonding Strength Investigation Based on Deep Learning Model.

Published in:

Processes, 2022, v. 10, n. 10, p. N.PAG, doi. 10.3390/pr10101899

By:

Jiang, Min;
Yu, Min;
Li, Bao;
Zhang, Hongze;
Zhu, Zhiyuan

Publication type:

Article

Effect of Combined Hydrophilic Activation on Interface Characteristics of Si/Si Wafer Direct Bonding.

Published in:

Processes, 2021, v. 9, n. 9, p. 1599, doi. 10.3390/pr9091599

By:

Li, Dongling;
Cui, Xiaohan;
Du, Mao;
Zhou, Ying;
Lan, Fenfen

Publication type:

Article

Investigation of OP-GaP Grown on OP-GaAs Templates Using Nondestructive Reciprocal Space Mapping.

Published in:

Crystals (2073-4352), 2023, v. 13, n. 2, p. 168, doi. 10.3390/cryst13020168

By:

Manavaimaran, Balaji;
Strömberg, Axel;
Tassev, Vladimir L.;
Vangala, Shivashankar R.;
Bailly, Myriam;
Grisard, Arnaud;
Gérard, Bruno;
Lourdudoss, Sebastian;
Sun, Yan-Ting

Publication type:

Article

Characterizations of Single-Crystal Lithium Niobate Thin Films.

Published in:

Crystals (2073-4352), 2022, v. 12, n. 5, p. N.PAG, doi. 10.3390/cryst12050667

By:

Li, Qingyun;
Zhang, Honghu;
Zhu, Houbin;
Hu, Hui

Publication type:

Article

Wafer Bonding of GaAs and SiC via Thin Au Film at Room Temperature.

Published in:

Micromachines, 2025, v. 16, n. 4, p. 439, doi. 10.3390/mi16040439

By:

Takeuchi, Kai;
Higurashi, Eiji

Publication type:

Article

Wafer Level Vacuum Packaging of MEMS-Based Uncooled Infrared Sensors.

Published in:

Micromachines, 2024, v. 15, n. 8, p. 935, doi. 10.3390/mi15080935

By:

Demirhan Aydin, Gulsah;
Akar, Orhan Sevket;
Akin, Tayfun

Publication type:

Article