Works matching DE "SEMICONDUCTOR storage devices"

Results: 108

Aromaticity‐Dependent Memristive Switching.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 7, p. 1, doi. 10.1002/aelm.202400654

By:

Cechosz, Ewelina;
Alluhaibi, Lulu;
Mazur, Tomasz;
Sławek, Andrzej;
Pandurangan, Nanjan;
Szaciłowski, Konrad

Publication type:

Article

Enhancing the security of memory in cloud infrastructure through in‐phase change memory data randomisation.

Published in:

IET Computers & Digital Techniques (Wiley-Blackwell), 2021, v. 15, n. 5, p. 321, doi. 10.1049/cdt2.12023

By:

Zhou, Xianzhong;
Wang, Ying

Publication type:

Article

g-byte error correcting codes for semiconductor memories.

Published in:

Journal of Algebra & Applied Mathematics, 2022, v. 20, n. 1, p. 17

By:

Jain, S.

Publication type:

Article

g-byte Error Control Codes.

Published in:

Journal of Analysis & Applications, 2025, v. 23, n. 1, p. 1

By:

Jain, S.

Publication type:

Article

Code design of ...-ispotty-byte error correcting θ-codes.

Published in:

Journal of Analysis & Applications, 2024, v. 22, n. 1, p. 31

By:

Jain, S.

Publication type:

Article

Preparation and Properties of Perovskite Thin Films for Resistive Nonvolatile Memory Applications.

Published in:

Ferroelectrics, 2007, v. 357, n. 1, p. 17, doi. 10.1080/00150190701527381

By:

Lai, Chun-Hung;
Tseng, Tseung-Yuen

Publication type:

Article

Bipolar Switching Properties of Bilayer V2O5/Sm2O3 Thin-film Resistive Random Access Memory Device Prepared by Sputtering Technology.

Published in:

Sensors & Materials, 2018, v. 30, n. 4, Part 2, p. 933, doi. 10.18494/SAM.2018.1796

By:

Jian-Yang Lin;
Kuang-Yao Wu;
Kai-Huang Chen;
Chien-Min Cheng;
Cheng-Ying Li

Publication type:

Article

Memristor-Based D-Flip-Flop Design and Application in Built-In Self-Test.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 14, p. 3019, doi. 10.3390/electronics12143019

By:

Dai, Guangzhen;
Xie, Wenxin;
Du, Xingyan;
Han, Mingjun;
Ni, Tianming;
Wu, Daohua

Publication type:

Article

Survey of Reliability Research on 3D Packaged Memory.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 12, p. 2709, doi. 10.3390/electronics12122709

By:

Zhou, Shuai;
Ma, Kaixue;
Wu, Yugong;
Liu, Peng;
Hu, Xianghong;
Nie, Guojian;
Ren, Yan;
Qiu, Baojun;
Cai, Nian;
Xu, Shaoqiu;
Wang, Han

Publication type:

Article

A High-Density Memory Design Based on Self-Aligned Tunneling Window for Large-Capacity Memory Application.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 16, p. 1954, doi. 10.3390/electronics10161954

By:

Wang, Chen;
Zhao, Xiuli;
Liu, Hao;
Chao, Xin;
Zhu, Hao;
Sun, Qingqing

Publication type:

Article

Evaluation of Low-Frequency Noise in MOSFETs Used as a Key Component in Semiconductor Memory Devices.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 15, p. 1759, doi. 10.3390/electronics10151759

By:

Teramoto, Akinobu

Publication type:

Article

An Ultra-low Power, High SNM, High Speed and High Temperature of 6T-SRAM Cell in 3C-SiC 130 nm CMOS Technology.

Published in:

Journal of Nano- & Electronic Physics, 2020, v. 12, n. 4, p. 1, doi. 10.21272/jnep.12(4).04024

By:

Berbara, D.;
Abid, M. Abboun;
Hebali, M.;
Benzohra, M.;
Chalabi, D.

Publication type:

Article

ADVANCEMENTS IN NANOELECTRONIC SONOS NONVOLATILE SEMICONDUCTOR MEMORY (NVSM) DEVICES AND TECHNOLOGY.

Published in:

International Journal of High Speed Electronics & Systems, 2006, v. 16, n. 2, p. 479, doi. 10.1142/S0129156406003801

By:

White, Marvin H.;
Yu Wang;
Wrazien, Stephen J.;
Yijie Zhao

Publication type:

Article

Buckyballs give flash a boost.

Published in:

Nature, 2008, v. 452, n. 7190, p. -1, doi. 10.1038/452921a

By:

Hand, Eric

Publication type:

Article

Optically programmable electron spin memory using semiconductor quantum dots.

Published in:

Nature, 2004, v. 432, n. 7013, p. 81, doi. 10.1038/nature03008

By:

Kroutvar, Miro;
Ducommun, Yann;
Heiss, Dominik;
Bichler, Max;
Schuh, Dieter;
Abstreiter, Gerhard;
Finley, Jonathan J.

Publication type:

Article

Sputter‐grown GeTe/Sb2Te3 superlattice interfacial phase change memory for low power and multi‐level‐cell operation.

Published in:

Electronics Letters (Wiley-Blackwell), 2022, v. 58, n. 1, p. 38, doi. 10.1049/ell2.12337

By:

Jin, Soo‐Min;
Kang, Shin‐Young;
Kim, Hea‐Jee;
Lee, Ju‐Young;
Nam, In‐Ho;
Shim, Tae‐Hun;
Song, Yun‐Heub;
Park, Jea‐Gun

Publication type:

Article

UNIFORMLY INDEPENDENT I-SPOTTY-BYTE ERROR CONTROL CODES.

Published in:

Algebras, Groups & Geometries, 2018, v. 35, n. 4, p. 427

By:

Jain, Sapna

Publication type:

Article

A comprehensive investigation of Bi2O3 on the physical, structural, optical, and electrical properties of K2O.ZnO.V2O5.B2O3 glasses.

Published in:

Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-58567-w

By:

Ibrahim, S.;
Ali, A. A.;
Fathi, Ahlam M.

Publication type:

Article

A comprehensive investigation of Bi2O3 on the physical, structural, optical, and electrical properties of K2O.ZnO.V2O5.B2O3 glasses.

Published in:

Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-58567-w

By:

Ibrahim, S.;
Ali, A. A.;
Fathi, Ahlam M.

Publication type:

Article

Consumer Storage Devices Enter Data Acquisition Market.

Published in:

EE: Evaluation Engineering, 2006, v. 45, n. 3, p. 26

By:

Lecklider, Tom

Publication type:

Article

Addressing the Flash Memory Challenge.

Published in:

EE: Evaluation Engineering, 2006, v. 45, n. 3, p. 20

By:

Fleeman, Gary

Publication type:

Article

DSOs and MSOs Offer 100-MHz Performance.

Published in:: 2005
Publication type:: Product Review

Enhanced charge storage characteristics of nickel nanocrystals embedded flash memory structures.

Published in:

Journal of Experimental Nanoscience, 2013, v. 8, n. 3, p. 389, doi. 10.1080/17458080.2012.708440

By:

Ray, SounakK;
Panda, Debashis;
Aluguri, Rakesh

Publication type:

Article

A review of interconnect materials used in emerging memory device packaging: first- and second-level interconnect materials.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 23, p. 27133, doi. 10.1007/s10854-021-07105-9

By:

Zou, Yong Sheng;
Gan, Chong Leong;
Chung, Min-Hua;
Takiar, Hem

Publication type:

Article

Built-In Self-Test Design for the 3D-Stacked Wide-I/O DRAM.

Published in:

Journal of Electronic Testing, 2016, v. 32, n. 2, p. 111, doi. 10.1007/s10836-016-5570-8

By:

Luo, Kun-Lun;
Wu, Ming-Hsueh;
Hsu, Chun-Lung;
Chen, Chen-An

Publication type:

Article

Testing Disturbance Faults in Various NAND Flash Memories.

Published in:

Journal of Electronic Testing, 2014, v. 30, n. 6, p. 643, doi. 10.1007/s10836-014-5487-z

By:

Hou, Chih-Sheng;
Li, Jin-Fu

Publication type:

Article

Partial-PreSET: Enhancing Lifetime of PCM-Based Main Memory with Fine-Grained SET Operations.

Published in:

International Journal of Parallel Programming, 2018, v. 46, n. 4, p. 736, doi. 10.1007/s10766-017-0527-9

By:

Shi, Yang;
Zhu, Yanmin;
Huang, Linpeng

Publication type:

Article

3D NAND Flash Based on Planar Cells.

Published in:

Computers (2073-431X), 2017, v. 6, n. 4, p. 28, doi. 10.3390/computers6040028

By:

Silvagni, Andrea

Publication type:

Article

Atomic mobility in the overheated amorphous GeTe compound for phase change memories.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 2, p. 329, doi. 10.1002/pssa.201532378

By:

Sosso, G. C.;
Behler, J.;
Bernasconi, M.

Publication type:

Article

Ferroelectric Memristor Based on Hf0.5Zr0.5O2 Thin Film Combining Memristive and Neuromorphic Functionalities.

Published in:

Physica Status Solidi - Rapid Research Letters, 2020, v. 14, n. 9, p. 1, doi. 10.1002/pssr.202000224

By:

Zhen Zhao;
Xiaobing Yan

Publication type:

Article

Controlled Current Transport in Pt/Nb:SrTiO3 Junctions via Insertion of Uniform Thin Layers of TaOx.

Published in:

Physica Status Solidi - Rapid Research Letters, 2019, v. 13, n. 7, p. N.PAG, doi. 10.1002/pssr.201900136

By:

Tsurumaki‐Fukuchi, Atsushi;
Tsuta, Yusuke;
Arita, Masashi;
Takahashi, Yasuo

Publication type:

Article

Characterization of Cr-doped Sb2Te3 films and their application to phase-change memory.

Published in:

Physica Status Solidi - Rapid Research Letters, 2015, v. 9, n. 8, p. 470, doi. 10.1002/pssr.201510214

By:

Wang, Qing;
Liu, Bo;
Xia, Yangyang;
ZhENg, Yonghui;
Huo, Ruru;
Zhu, Min;
Song, Sannian;
Lv, Shilong;
ChENg, Yan;
Song, Zhitang;
FENg, Songlin

Publication type:

Article

Design and Analysis of SRAM Cell using Negative Bit-Line Write Assist Technique and Separate Read Port for High-Speed Applications.

Published in:

Journal of Circuits, Systems & Computers, 2021, v. 13, n. 15, p. 1, doi. 10.1142/S0218126621502704

By:

Mishra, Jitendra Kumar;
Mankali, Lakshmi Likhitha;
Kandpal, Kavindra;
Misra, Prasanna Kumar;
Goswami, Manish

Publication type:

Article

Van Duzer's Contribution: "Ted Van Duzer's Reflections on Brian Josephson's 80th Birthday".

Published in:

2021

By:

Van Duzer, Theodore (Ted)

Publication type:

Editorial

The Rise of the Flash Memory Market: Its Impact on Firm Behavior and Global Semiconductor Trade Patterns.

Published in:

Journal of International Commerce & Economics, 2007, p. 1

By:

Yinug, Christopher Falan

Publication type:

Article

Low Power High Speed Gated Ground 7t Sram Using Multi-Threshold Cmos Technique.

Published in:

Journal of Active & Passive Electronic Devices, 2020, v. 15, n. 1/2, p. 117

By:

THOMAS, SABU;
AKASHE, SHYAM

Publication type:

Article

Flash Forward to the Future in a Millisecond.

Published in:: ComputerWorld Hong Kong, 2009, v. 26, n. 2, p. 11
Publication type:: Article

Investigation of Time–Dependent Resistive Switching Behaviors of Unipolar Nonvolatile Organic Memory Devices.

Published in:

Advanced Functional Materials, 2018, v. 28, n. 35, p. 1, doi. 10.1002/adfm.201801162

By:

Lee, Woocheol;
Kim, Youngrok;
Song, Younggul;
Cho, Kyungjune;
Yoo, Daekyoung;
Ahn, Heebeom;
Kang, Keehoon;
Lee, Takhee

Publication type:

Article

The ovonic threshold switching characteristics in SixTe1−x based selector devices.

Published in:

Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 11, p. 1, doi. 10.1007/s00339-018-2153-9

By:

Gao, Tian;
Feng, Jie;
Ma, Haili;
Zhu, Xi

Publication type:

Article

Impact of threshold voltage variation on 1S1R crossbar array with threshold switching selectors.

Published in:

Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 5, p. 1, doi. 10.1007/s00339-017-0973-7

By:

Song, Bing;
Xu, Hui;
Liu, Haijun;
Li, Qingjiang

Publication type:

Article

Sub-10 fJ/bit radiation-hard nanoelectromechanical non-volatile memory.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-36076-0

By:

Lee, Yong-Bok;
Kang, Min-Ho;
Choi, Pan-Kyu;
Kim, Su-Hyun;
Kim, Tae-Soo;
Lee, So-Young;
Yoon, Jun-Bo

Publication type:

Article

Don’t make cache too complex: A simple probability-based cache management scheme for SSDs.

Published in:

PLoS ONE, 2017, v. 12, n. 3, p. 1, doi. 10.1371/journal.pone.0174375

By:

Baek, Seungjae;
Cho, Sangyeun;
Choi, Jongmoo

Publication type:

Article

Member News.

Published in:: Chemistry & Industry, 2023, v. 87, n. 11, p. 46, doi. 10.1002/cind.10195
Publication type:: Article

Recent Progress of Non-Volatile Memory Devices Based on Two-Dimensional Materials.

Published in:

Chips, 2024, v. 3, n. 4, p. 271, doi. 10.3390/chips3040014

By:

Pan, Jiong;
Wang, Zeda;
Zhao, Bingchen;
Yin, Jiaju;
Guo, Pengwen;
Yang, Yi;
Ren, Tian-Ling

Publication type:

Article

Digital data storage on DNA tape using CRISPR base editors.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-42223-4

By:

Sadremomtaz, Afsaneh;
Glass, Robert F.;
Guerrero, Jorge Eduardo;
LaJeunesse, Dennis R.;
Josephs, Eric A.;
Zadegan, Reza

Publication type:

Article

Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase-engineered edge contacts.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-41363-x

By:

Yu, Jun;
Wang, Han;
Zhuge, Fuwei;
Chen, Zirui;
Hu, Man;
Xu, Xiang;
He, Yuhui;
Ma, Ying;
Miao, Xiangshui;
Zhai, Tianyou

Publication type:

Article

AN EVALUATION OF A CONFIGURABLE VLIW MICROARCHITECTURE FOR EMBEDDED DSP APPLICATIONS.

Published in:

Journal of Circuits, Systems & Computers, 2004, v. 13, n. 6, p. 1321, doi. 10.1142/S0218126604001994

By:

LIU, WANLI;
ALBONESI, DAVID H.;
GOSTOMSKI, JOHN;
PALUM, LLOYD;
HINTERBERGER, DAVE;
WANZENRIED, RICK;
INDOVINA, MARK

Publication type:

Article

REVIEW OF RESEARCH ON STORAGE DEVELOPMENT.

Published in:

Scalable Computing: Practice & Experience, 2021, v. 22, n. 3, p. 365, doi. 10.12694/scpe.v22i3.1904

By:

HONGHONG ZHANG;
GUOGUO ZHANG

Publication type:

Article

Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties.

Published in:

Nature Nanotechnology, 2007, v. 2, n. 12, p. 790, doi. 10.1038/nnano.2007.380

By:

Jang-Sik Lee;
Jinhan Cho;
Chiyoung Lee;
Inpyo Kim;
Jeongju Park;
Yong-Mu Kim;
Hyunjung Shin;
Jaegab Lee;
Caruso, Frank

Publication type:

Article

Phase-change materials: Towards a universal memory?

Published in:

Nature Materials, 2005, v. 4, n. 4, p. 265, doi. 10.1038/nmat1359

By:

Wuttig, Matthias

Publication type:

Article