Works matching DE "SEMICONDUCTOR storage devices"

Results: 106

A review of interconnect materials used in emerging memory device packaging: first- and second-level interconnect materials.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 23, p. 27133, doi. 10.1007/s10854-021-07105-9

By:

Zou, Yong Sheng;
Gan, Chong Leong;
Chung, Min-Hua;
Takiar, Hem

Publication type:

Article

g-byte error correcting codes for semiconductor memories.

Published in:

Journal of Algebra & Applied Mathematics, 2022, v. 20, n. 1, p. 17

By:

Jain, S.

Publication type:

Article

Modeling of Sonos Memory Cell Erase Cycle.

Published in:

Integrated Ferroelectrics, 2012, v. 132, n. 1, p. 70, doi. 10.1080/10584587.2012.660819

By:

Phillips, Thomas A.;
MacLeod, Todd C.;
Ho, Fat D.

Publication type:

Article

Characteristics of Strontium Bismuth Tantalate Film with ZrO2 Buffer Layer for Non-Volatile Memory Applications.

Published in:

Integrated Ferroelectrics, 2011, v. 124, n. 1, p. 119, doi. 10.1080/10584587.2011.573734

By:

Roy, A.;
Dhar, A.;
Ray, S. K.

Publication type:

Article

FERROELECTRIC NANOTUBE (FNT) CAPACITORS FOR HIGH-DENSITY SEMICONDUCTOR MEMORIES.

Published in:

Integrated Ferroelectrics, 2006, v. 81, n. 1, p. 89, doi. 10.1080/10584580600657955

By:

Shaislamov, U. A.;
Seo, B. I.;
Lee, S. J.;
Park, B. H.;
Kim, I. S.;
Hong, S. K.;
Yang, B.

Publication type:

Article

Digital data storage on DNA tape using CRISPR base editors.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-42223-4

By:

Sadremomtaz, Afsaneh;
Glass, Robert F.;
Guerrero, Jorge Eduardo;
LaJeunesse, Dennis R.;
Josephs, Eric A.;
Zadegan, Reza

Publication type:

Article

Simultaneously ultrafast and robust two-dimensional flash memory devices based on phase-engineered edge contacts.

Published in:

Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-41363-x

By:

Yu, Jun;
Wang, Han;
Zhuge, Fuwei;
Chen, Zirui;
Hu, Man;
Xu, Xiang;
He, Yuhui;
Ma, Ying;
Miao, Xiangshui;
Zhai, Tianyou

Publication type:

Article

Park Systems.

Published in:: Microscopy Today, 2022, v. 30, p. 19, doi. 10.1017/S1551929522000153
Publication type:: Article

ADVANCEMENTS IN NANOELECTRONIC SONOS NONVOLATILE SEMICONDUCTOR MEMORY (NVSM) DEVICES AND TECHNOLOGY.

Published in:

International Journal of High Speed Electronics & Systems, 2006, v. 16, n. 2, p. 479, doi. 10.1142/S0129156406003801

By:

White, Marvin H.;
Yu Wang;
Wrazien, Stephen J.;
Yijie Zhao

Publication type:

Article

Sputter‐grown GeTe/Sb2Te3 superlattice interfacial phase change memory for low power and multi‐level‐cell operation.

Published in:

Electronics Letters (Wiley-Blackwell), 2022, v. 58, n. 1, p. 38, doi. 10.1049/ell2.12337

By:

Jin, Soo‐Min;
Kang, Shin‐Young;
Kim, Hea‐Jee;
Lee, Ju‐Young;
Nam, In‐Ho;
Shim, Tae‐Hun;
Song, Yun‐Heub;
Park, Jea‐Gun

Publication type:

Article

Three-dimensional AND flash memory.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 11, p. 739, doi. 10.1049/el.2017.0465

By:

Kim, Y.;
Park, I. H.;
Kwon, H. T.;
Wee, D.;
Park, B.-G.

Publication type:

Article

g-byte Error Control Codes.

Published in:

Journal of Analysis & Applications, 2025, v. 23, n. 1, p. 1

By:

Jain, S.

Publication type:

Article

Code design of ...-ispotty-byte error correcting θ-codes.

Published in:

Journal of Analysis & Applications, 2024, v. 22, n. 1, p. 31

By:

Jain, S.

Publication type:

Article

Data Storage Through Electromagnetic Waves.

Published in:

IUP Journal of Electrical & Electronics Engineering, 2014, v. 7, n. 3, p. 25

By:

Shetty, Pooja;
Biswas, Aindrila;
Threse, Annie

Publication type:

Article

Fading Memories: A Process Theory of Strategic Business Exit in Dynamic Environments.

Published in:

Administrative Science Quarterly, 1994, v. 39, n. 1, p. 24, doi. 10.2307/2393493

By:

Burgelman, Robert A.

Publication type:

Article

The Rise of the Flash Memory Market: Its Impact on Firm Behavior and Global Semiconductor Trade Patterns.

Published in:

Journal of International Commerce & Economics, 2007, p. 1

By:

Yinug, Christopher Falan

Publication type:

Article

Geometrical Optics and Models of Computer Memory Fragmentation.

Published in:

Studies in Applied Mathematics, 2003, v. 111, n. 2, p. 185, doi. 10.1111/1467-9590.t01-1-00232

By:

Knessl, Charles

Publication type:

Article

SuFEx‐based Transparent Polysulfates and their Applications in Tunable Resistant Electrical Memory Materials.

Published in:

Advanced Functional Materials, 2025, v. 35, n. 12, p. 1, doi. 10.1002/adfm.202417606

By:

Zhou, Feng;
Liang, Huizhen;
Liu, Tingchang;
Liu, Ting;
Luo, Wancheng;
He, Zhihao;
Zhang, Qijian

Publication type:

Article

Highly Enhanced Polarization Switching Speed in HfO2‐based Ferroelectric Thin Films via a Composition Gradient Strategy.

Published in:

Advanced Functional Materials, 2023, v. 33, n. 31, p. 1, doi. 10.1002/adfm.202301746

By:

Hao, Puqi;
Zheng, Shuaizhi;
Zeng, Binjian;
Yu, Tao;
Yang, Zhibin;
Liao, Luocheng;
Peng, Qiangxiang;
Yang, Qijun;
Zhou, Yichun;
Liao, Min

Publication type:

Article

A joint encoder–decoder framework for supporting energy efficient audio decoding.

Published in:

Multimedia Systems, 2009, v. 15, n. 2, p. 101, doi. 10.1007/s00530-009-0152-6

By:

Huang, Wendong;
Wang, Ye

Publication type:

Article

Various Flash Memory Devices of Novel Design.

Published in:

IETE Technical Review, 2009, v. 26, n. 4, p. 247, doi. 10.4103/0256-4602.52994

By:

Jang-Gn Yun;
Jong Duk Lee;
Byung-Gook Park

Publication type:

Article

High-Speed Epitaxial Growth of Terbium- and Europium-Doped Yttrium Aluminum Perovskite Thick Film Phosphors Using Laser-Assisted Chemical Vapor Deposition.

Published in:

Materials Transactions, 2023, v. 64, n. 6, p. 1107, doi. 10.2320/matertrans.MT-ME2022001

By:

Yuri Mitsuhashi;
Shogen Matsumoto;
Akihiko Ito

Publication type:

Article

Design and Analysis of SRAM Cell using Negative Bit-Line Write Assist Technique and Separate Read Port for High-Speed Applications.

Published in:

Journal of Circuits, Systems & Computers, 2021, v. 13, n. 15, p. 1, doi. 10.1142/S0218126621502704

By:

Mishra, Jitendra Kumar;
Mankali, Lakshmi Likhitha;
Kandpal, Kavindra;
Misra, Prasanna Kumar;
Goswami, Manish

Publication type:

Article

AN EVALUATION OF A CONFIGURABLE VLIW MICROARCHITECTURE FOR EMBEDDED DSP APPLICATIONS.

Published in:

Journal of Circuits, Systems & Computers, 2004, v. 13, n. 6, p. 1321, doi. 10.1142/S0218126604001994

By:

LIU, WANLI;
ALBONESI, DAVID H.;
GOSTOMSKI, JOHN;
PALUM, LLOYD;
HINTERBERGER, DAVE;
WANZENRIED, RICK;
INDOVINA, MARK

Publication type:

Article

Low Power High Speed Gated Ground 7t Sram Using Multi-Threshold Cmos Technique.

Published in:

Journal of Active & Passive Electronic Devices, 2020, v. 15, n. 1/2, p. 117

By:

THOMAS, SABU;
AKASHE, SHYAM

Publication type:

Article

Member News.

Published in:: Chemistry & Industry, 2023, v. 87, n. 11, p. 46, doi. 10.1002/cind.10195
Publication type:: Article

Built-In Self-Test Design for the 3D-Stacked Wide-I/O DRAM.

Published in:

Journal of Electronic Testing, 2016, v. 32, n. 2, p. 111, doi. 10.1007/s10836-016-5570-8

By:

Luo, Kun-Lun;
Wu, Ming-Hsueh;
Hsu, Chun-Lung;
Chen, Chen-An

Publication type:

Article

Testing Disturbance Faults in Various NAND Flash Memories.

Published in:

Journal of Electronic Testing, 2014, v. 30, n. 6, p. 643, doi. 10.1007/s10836-014-5487-z

By:

Hou, Chih-Sheng;
Li, Jin-Fu

Publication type:

Article

Partial-PreSET: Enhancing Lifetime of PCM-Based Main Memory with Fine-Grained SET Operations.

Published in:

International Journal of Parallel Programming, 2018, v. 46, n. 4, p. 736, doi. 10.1007/s10766-017-0527-9

By:

Shi, Yang;
Zhu, Yanmin;
Huang, Linpeng

Publication type:

Article

A High-Density Memory Design Based on Self-Aligned Tunneling Window for Large-Capacity Memory Application.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 16, p. 1954, doi. 10.3390/electronics10161954

By:

Wang, Chen;
Zhao, Xiuli;
Liu, Hao;
Chao, Xin;
Zhu, Hao;
Sun, Qingqing

Publication type:

Article

Evaluation of Low-Frequency Noise in MOSFETs Used as a Key Component in Semiconductor Memory Devices.

Published in:

Electronics (2079-9292), 2021, v. 10, n. 15, p. 1759, doi. 10.3390/electronics10151759

By:

Teramoto, Akinobu

Publication type:

Article

In Situ Thermal Decomposition of Potassium Borohydride for Borophene Synthesis and Its Application in a High-Performance Non-Volatile Memory Device.

Published in:

Nanomaterials (2079-4991), 2025, v. 15, n. 5, p. 362, doi. 10.3390/nano15050362

By:

Tian, Qian;
Liang, Xinchao;
Xu, Maoping;
Liu, Yi;
Wu, Qilong;
Tai, Guoan

Publication type:

Article

Single-Crystalline Nanowires of Molecular Ferroelectric Semiconductors for Optoelectronic Memory.

Published in:

Nanomaterials (2079-4991), 2024, v. 14, n. 23, p. 1920, doi. 10.3390/nano14231920

By:

Qiu, Xinxia;
Xu, Mingsheng;
Cong, Chunxiao;
Qiu, Zhi-Jun;
Hu, Laigui;
Liu, Ran

Publication type:

Article

Effect of Process Temperature on Density and Electrical Characteristics of Hf 0.5 Zr 0.5 O 2 Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition.

Published in:

Nanomaterials (2079-4991), 2022, v. 12, n. 3, p. 548, doi. 10.3390/nano12030548

By:

Kim, Hak-Gyeong;
Hong, Da-Hee;
Yoo, Jae-Hoon;
Lee, Hee-Chul

Publication type:

Article

Area-Scalable 10 9 -Cycle-High-Endurance FeFET of Strontium Bismuth Tantalate Using a Dummy-Gate Process.

Published in:

Nanomaterials (2079-4991), 2021, v. 11, n. 1, p. 101, doi. 10.3390/nano11010101

By:

Takahashi, Mitsue;
Sakai, Shigeki

Publication type:

Article

Solvents Effects on Film Morphologies and Memory Behavior of a Perylenediimide‐Containing Pendent Polymer.

Published in:

Chemistry - An Asian Journal, 2018, v. 13, n. 14, p. 1784, doi. 10.1002/asia.201800331

By:

Wang, Ming;
Zhang, Qi‐jian;
Li, Zhuang;
Li, Hua;
Lu, Jian‐Mei

Publication type:

Article

Low Power and Suppressed Noise 6T, 7T SRAM Cell Using 18 nm FinFET.

Published in:

Wireless Personal Communications, 2023, v. 130, n. 1, p. 103, doi. 10.1007/s11277-023-10277-8

By:

Santosh Kumar, T.;
Tripathi, Suman Lata

Publication type:

Article

1T-DRAM Cell with Different FET Technologies for Low Power Application.

Published in:

Wireless Personal Communications, 2023, v. 128, n. 1, p. 471, doi. 10.1007/s11277-022-09963-w

By:

Addala, Durgesh;
Sinha, Sanjeet Kumar;
Gadiparthi, Mohan Chandu;
Chander, Sweta

Publication type:

Article

Recent Progress of Non-Volatile Memory Devices Based on Two-Dimensional Materials.

Published in:

Chips, 2024, v. 3, n. 4, p. 271, doi. 10.3390/chips3040014

By:

Pan, Jiong;
Wang, Zeda;
Zhao, Bingchen;
Yin, Jiaju;
Guo, Pengwen;
Yang, Yi;
Ren, Tian-Ling

Publication type:

Article

SRAM cell with asymmetric pass-gate nMOSFETs for embedded memory applications.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 13, p. 1172, doi. 10.1049/el.2016.0938

By:

Weiwei He;
Jing Chen;
Jiexin Luo;
Zhan Chai;
Xi Wang

Publication type:

Article

Skew cancellation technique for >256-Gbyte/s high-bandwidth memory (HBM).

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 13, p. 1155, doi. 10.1049/el.2015.4001

By:

Ahn, K.;
Yoo, C.

Publication type:

Article

MFSFET two-bit 1T1C DRAM memory design and empirical data.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 6, p. 477, doi. 10.1049/el.2015.2874

By:

Hunt, M. R.;
Mitchell, C.;
McCartney, C. L.;
Ho, F. D.

Publication type:

Article

Reconfigurable physical unclonable function based on probabilistic switching of RRAM.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 8, p. 615, doi. 10.1049/el.2014.4375

By:

Chen, A.

Publication type:

Article

through the phases.

Published in:: Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 2, p. 55, doi. 10.1049/el.2013.4247
Publication type:: Article

LDF (less dirty first): dirtiness-aware cache replacement policy for PCM main memory.

Published in:

Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 25, p. 1607, doi. 10.1049/el.2013.1418

By:

S. Yoo;
E. Lee;
H. Bahn

Publication type:

Article

Market structure, learning and product innovation: Evidence for the EPROM market.

Published in:

International Journal of the Economics of Business, 1995, v. 2, n. 1, p. 87, doi. 10.1080/758521098

By:

Gruber, Harald

Publication type:

Article

Impact of threshold voltage variation on 1S1R crossbar array with threshold switching selectors.

Published in:

Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 5, p. 1, doi. 10.1007/s00339-017-0973-7

By:

Song, Bing;
Xu, Hui;
Liu, Haijun;
Li, Qingjiang

Publication type:

Article

An Efficient Spectral Dynamical Core for Distributed Memory Computers.

Published in:

Monthly Weather Review, 2002, v. 130, n. 5, p. 1384, doi. 10.1175/1520-0493(2002)130<1384:AESDCF>2.0.CO;2

By:

Rivier, L.;
Loft, R.;
Polvani, L. M.

Publication type:

Article

Don’t make cache too complex: A simple probability-based cache management scheme for SSDs.

Published in:

PLoS ONE, 2017, v. 12, n. 3, p. 1, doi. 10.1371/journal.pone.0174375

By:

Baek, Seungjae;
Cho, Sangyeun;
Choi, Jongmoo

Publication type:

Article

Layer-by-layer assembled charge-trap memory devices with adjustable electronic properties.

Published in:

Nature Nanotechnology, 2007, v. 2, n. 12, p. 790, doi. 10.1038/nnano.2007.380

By:

Jang-Sik Lee;
Jinhan Cho;
Chiyoung Lee;
Inpyo Kim;
Jeongju Park;
Yong-Mu Kim;
Hyunjung Shin;
Jaegab Lee;
Caruso, Frank

Publication type:

Article