4H-SIC VERTICAL RESURF SCHOTTKY RECTIFIERS AND MOSFETS.
- Published in:
- International Journal of High Speed Electronics & Systems, 2007, v. 17, n. 1, p. 55, doi. 10.1142/S0129156407004242
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- Publication type:
- Article
Works matching DE "SEMICONDUCTOR rectifiers"
Results: 10
1
2
Design of dual frequency rectifier system for ISM band.
- Published in:
- Journal of the Tianjin Polytechnic University / Tianjin Gongye Daxue Xuebao, 2018, v. 37, n. 5, p. 57, doi. 10.3969/j.issn.1671-024x.2018.05.009
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- Publication type:
- Article
3
Nano-Molecular Junctions on STM Tips.
- Published in:
- Nano-Micro Letters, 2011, v. 3, n. 1, p. 1, doi. 10.1007/BF03353644
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- Publication type:
- Article
4
A Stepped Two-Phase Configuration for Switched-Reluctance Motor with High Starting Torque.
- Published in:
- Majlesi Journal of Electrical Engineering, 2010, v. 4, n. 1, p. 51
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- Publication type:
- Article
5
Voltage rectification by hard superconductors.
- Published in:
- Technical Physics, 1999, v. 44, n. 7, p. 850, doi. 10.1134/1.1259363
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- Publication type:
- Article
6
COMPARACIÓN DEL COMPORTAMIENTO ELÉCTRICO DE DIODOS TIPO SCHOTTKY DE LA FORMA Ag-Si y Ag-(P)Si-Si.
- Published in:
- Revista Colombiana de Física, 2006, v. 38, n. 1, p. 137
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- Publication type:
- Article
7
A soft‐switching inverting high step‐down converter with a pair of coupled inductors and self‐driven synchronous rectifier.
- Published in:
- IET Power Electronics (Wiley-Blackwell), 2021, v. 14, n. 15, p. 2441, doi. 10.1049/pel2.12191
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- Publication type:
- Article
8
DECREASING OF SPATIAL DIMENSION OF A SERIAL OF DIFFUSED-JUNCTION RECTIFIERS IN A MULTILAYER STRUCTURE IN ACCOUNT WITH NONLINEAR EFFECTS:: OPTIMIZATION OF ANNEALING TIME.
- Published in:
- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2009, v. 23, n. 22, p. 4637, doi. 10.1142/S0217979209053400
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- Publication type:
- Article
9
A PWM-Controlled Rectifier Step Up/Down Output Voltage with a High Power Factor.
- Published in:
- Electrical Engineering in Japan, 1993, v. 113, n. 5, p. 83, doi. 10.1002/eej.4391130508
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- Publication type:
- Article
10
INFLUENCE OF POROSITY OF MATERIALS ON REDISTRIBUTION OF DOPANT DURING MANUFACTURING OF DIFFUSION-JUNCTION RECTIFIERS IN SEMICONDUCTOR HETEROSTRUCTURES.
- Published in:
- Modern Physics Letters B, 2010, v. 24, n. 32, p. 3049, doi. 10.1142/S021798491002536X
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- Publication type:
- Article