Works matching DE "SEMICONDUCTOR materials -- Electric properties"
Results: 15
Enabling 5G with GaN Technology: Setting the Table for Success.
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- Microwave Journal, 2017, v. 60, n. 5, p. 10
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Raytheon Continues to Drive GaN Evolution Through Cutting Edge Innovation.
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- Microwave Journal, 2014, v. 57, n. 4, p. 57
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Time-evolution of Electrophoretically Deposited CdSe Nanocrystal Films.
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- Journal of the Tennessee Academy of Science, 2014, v. 89, n. 1, p. 36
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Measuring electrical parameters of semiconducting crystallites using Hall and Van der Pau methods in the slow-temperature-drift mode.
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- Instruments & Experimental Techniques, 2017, v. 60, n. 1, p. 114, doi. 10.1134/S0020441217010195
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Array of electrodeposited Ru-decorated TiO<sub>2</sub> nanotubes with enhanced photoresponse.
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- Journal of Solid State Electrochemistry, 2018, v. 22, n. 8, p. 2445, doi. 10.1007/s10008-018-3955-6
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Fabrication and electrochemical performance of delafossite CuFeO<sub>2</sub> particles as a stable anode material for lithium-ion batteries.
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- Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 22, p. 19454, doi. 10.1007/s10854-018-0075-0
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Effect of pH on the phase transformation of strontium titanium materials and their photocatalytic property.
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- Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 22, p. 19344, doi. 10.1007/s10854-018-0061-6
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Enhanced photoelectrochemical performance by doping Mo into BiVO<sub>4</sub> lattice.
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- Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 22, p. 19278, doi. 10.1007/s10854-018-0054-5
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Optimization of sulfurization time for properties of Cu<sub>2</sub>ZnSnS<sub>4</sub> films and cells by sputtering method.
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- Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 22, p. 19137, doi. 10.1007/s10854-018-0040-y
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Effects of annealing and Nb doping on the electrical properties of p-Si/n-β-Ga<sub>2</sub>O<sub>3</sub>:Nb heterojunction.
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- Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 22, p. 19028, doi. 10.1007/s10854-018-0028-7
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Failure analysis of EOS-induced damage at final electrical testing.
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 2, p. 596, doi. 10.1007/s10854-013-1521-7
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Low-temperature thermoelectric and magnetic characteristics of CaBiCoFeO (0 ≤ x ≤ 0.10).
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- Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 2, p. 778, doi. 10.1007/s10854-013-1645-9
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Role of native point defects and Ga diffusion on electrical properties of degenerate Ga-doped ZnO.
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- Physica Status Solidi (B), 2013, v. 250, n. 10, p. 2114, doi. 10.1002/pssb.201200945
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Electronic Raman Scattering On Individual Semiconducting Single Walled Carbon Nanotubes.
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- Scientific Reports, 2014, p. 1, doi. 10.1038/srep05969
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Features of the band structure and conduction mechanisms of n-HfNiSn heavily doped with Y.
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- Semiconductors, 2017, v. 51, n. 2, p. 139, doi. 10.1134/S106378261702018X
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