Works about SEMICONDUCTOR junctions

Results: 773

Implanter, RTP system issues for ultrashallow junction formation.

Published in:

Solid State Technology, 2001, v. 44, n. 9, p. 77

By:

Amen, Mike;
Hebb, Jeffrey

Publication type:

Article

Ultrashallow junction formation by ion implant and RTA.

Published in:

Solid State Technology, 1997, v. 40, n. 12, p. 71

By:

Downey, Daniel F.;
Osburn, Carlton M.

Publication type:

Article

Electroless deposition of gold on silicon and its potential applications: review.

Published in:

Surface Engineering, 2016, v. 32, n. 5, p. 321, doi. 10.1179/1743294415Y.0000000060

By:

Lahiri, A.;
Kobayashi, S.-I.

Publication type:

Article

Impact of the Nature of the Side-Chains on the Polymer-Fullerene Packing in the Mixed Regions of Bulk Heterojunction Solar Cells.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 32, p. 5913, doi. 10.1002/adfm.201601134

By:

Wang, Tonghui;
Ravva, Mahesh Kumar;
Brédas, Jean‐Luc

Publication type:

Article

Beryllium-Assisted p-Type Doping for ZnO Homojunction Light-Emitting Devices.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 21, p. 3696, doi. 10.1002/adfm.201600163

By:

Chen, Anqi;
Zhu, Hai;
Wu, Yanyan;
Chen, Mingming;
Zhu, Yuan;
Gui, Xuchun;
Tang, Zikang

Publication type:

Article

Strain Modulation in Graphene/ZnO Nanorod Film Schottky Junction for Enhanced Photosensing Performance.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 9, p. 1347, doi. 10.1002/adfm.201503905

By:

Liu, Shuo;
Liao, Qingliang;
Lu, Shengnan;
Zhang, Zheng;
Zhang, Guangjie;
Zhang, Yue

Publication type:

Article

Gate-Controlled Energy Barrier at a Graphene/Molecular Semiconductor Junction.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 20, p. 2972, doi. 10.1002/adfm.201403407

By:

Parui, Subir;
Pietrobon, Luca;
Ciudad, David;
Vélez, Saül;
Sun, Xiangnan;
Casanova, Fèlix;
Stoliar, Pablo;
Hueso, Luis E.

Publication type:

Article

Contents: (Adv. Funct. Mater. 20/2015).

Published in:: Advanced Functional Materials, 2015, v. 25, n. 20, p. 2943, doi. 10.1002/adfm.201570134
Publication type:: Article

Energy Barriers: Gate-Controlled Energy Barrier at a Graphene/Molecular Semiconductor Junction (Adv. Funct. Mater. 20/2015).

Published in:

Advanced Functional Materials, 2015, v. 25, n. 20, p. 3103, doi. 10.1002/adfm.201570137

By:

Parui, Subir;
Pietrobon, Luca;
Ciudad, David;
Vélez, Saül;
Sun, Xiangnan;
Casanova, Fèlix;
Stoliar, Pablo;
Hueso, Luis E.

Publication type:

Article

Effects of Delocalized Charge Carriers in Organic Solar Cells: Predicting Nanoscale Device Performance from Morphology.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 13, p. 1996, doi. 10.1002/adfm.201402332

By:

Gagorik, Adam G.;
Mohin, Jacob W.;
Kowalewski, Tomasz;
Hutchison, Geoffrey R.

Publication type:

Article

Room-Temperature Printing of Organic Thin-Film Transistors with π-Junction Gold Nanoparticles.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 31, p. 4886, doi. 10.1002/adfm.201400169

By:

Minari, Takeo;
Kanehara, Yuki;
Liu, Chuan;
Sakamoto, Kenji;
Yasuda, Takeshi;
Yaguchi, Asuka;
Tsukada, Shigemi;
Kashizaki, Kei;
Kanehara, Masayuki

Publication type:

Article

Solution processed low-voltage metal-oxide transistor by using TiO2/Li–Al2O3 stacked gate dielectric.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 12, p. 9580, doi. 10.1007/s10854-021-07581-z

By:

Pal, Nila;
Pandey, Utkarsh;
Biring, Sajal;
Pal, Bhola N.

Publication type:

Article

Improving bias-stress stability of p-type organic field-effect transistors by suppressing electron injection.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 7, p. 3726, doi. 10.1007/s10854-021-07564-0

By:

Guo, Chunhua;
Yang, Zhenxin;
Qin, Lingping;
Man, Jiaxiu;
Zhang, Tao;
Wang, Deng-Ke;
Lu, Zheng-Hong;
Zhu, Qiang

Publication type:

Article

Design of Schottky barriers in ZnO–TiC interface and its application in high sensitivity detection of aniline.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 1, p. 458, doi. 10.1007/s10854-021-07319-x

By:

Dong, Hua-Dong;
Zhao, Jian-Ping;
Peng, Ming-Xing;
Zhang, Yong-Hui

Publication type:

Article

Phase transition of nickel silicide compounds and their electrical properties.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 12, p. 16811, doi. 10.1007/s10854-021-06238-1

By:

Pascu, Razvan;
Romanitan, Cosmin

Publication type:

Article

One-step synthesis of magnetic recoverable Ag2S/Fe3O4/MoS2 nanocomposites for enhanced visible light photocatalysis.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 2, p. 1047, doi. 10.1007/s10854-019-02615-z

By:

Chang, Meng-Jie;
Cui, Wen-Na;
Liu, Jun;
Luo, Zhen-Min;
Sun, Meng;
Qiu, Lei;
Fan, Si-Meng

Publication type:

Article

Investigation of the temperature-dependent electrical properties of Au/PEDOT:WO3/p-Si hybrid device.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 17, p. 16676, doi. 10.1007/s10854-019-02048-8

By:

Keskin, Mine;
Akkaya, Abdullah;
Ayyıldız, Enise;
Uygun Öksüz, Ayşegül;
Özbay Karakuş, Mücella

Publication type:

Article

Few layer g-C3N4 decorated flower-like ZnO for visible light photocatalytic reduction of Cr(VI).

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 9, p. 8577, doi. 10.1007/s10854-019-01178-3

By:

Yan, Xin;
Li, Jintong;
Ai, Tao;
Su, Xinghua;
Wang, Zhenjun;
Zhao, Peng

Publication type:

Article

Valence-band offsets of InGaZnO4, LaAlO3, and SrTiO3 heterostructures explained by interface-induced gap states.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 23, p. 19607, doi. 10.1007/s10854-018-0161-3

By:

Mönch, Winfried

Publication type:

Article

Effects of annealing and Nb doping on the electrical properties of p-Si/n-β-Ga2O3:Nb heterojunction.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 22, p. 19028, doi. 10.1007/s10854-018-0028-7

By:

Zhang, Hao;
Deng, Jinxiang;
He, Yafeng;
Duan, Ping;
Liang, Xiaoyang;
Li, Ruidong;
Qin, Changdong;
Pan, Zhiwei;
Bai, Zhiying;
Wang, Jiyou

Publication type:

Article

On the band-structure lineup at GaO, GdO, and GaO(GdO) heterostructures and GaO Schottky contacts.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 2, p. 1444, doi. 10.1007/s10854-015-3909-z

By:

Mönch, Winfried

Publication type:

Article

Electrical characterization of a pre-ceramic polymer modified Ag/poly(hydridocarbyne)/ p-Si Schottky barrier diode.

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 12, p. 2282, doi. 10.1007/s10854-012-0819-1

By:

Başman, Necati;
Uzun, Orhan;
Fiat, Songül;
Alkan, Cemil;
Çankaya, Güven

Publication type:

Article

The roles of “free” and “trapped” charges in single-crystal rubrene organic field-effect transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 6, p. 535, doi. 10.1007/s10854-009-9953-9

By:

Kwok, H. L.

Publication type:

Article

In-plane anisotropic electrical and optical properties of gold-doped rhenium disulphide.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 476, doi. 10.1007/s10854-008-9685-2

By:

Liang, C. H.;
Tiong, K. K.;
Huang, Y. S.;
Dumcenco, D.;
Ho, C. H.

Publication type:

Article

Enhancement of Faraday rotation in 3D/Bi:YIG/1D photonic heterostructures.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 493, doi. 10.1007/s10854-008-9689-y

By:

Fujikawa, R.;
Baryshev, A. V.;
Khanikaev, A. B.;
Kim, J.;
Uchida, H.;
Inoue, M.

Publication type:

Article

Optical spectroscopy of a semi-insulating GaAs/AlGaAs multiple quantum well system near double exciton–polariton and Bragg resonance.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 699, doi. 10.1007/s10854-007-9382-6

By:

Chaldyshev, V. V.;
Shkolnik, A. S.;
Evtikhiev, V. P.;
Holden, T.

Publication type:

Article

ANALYSIS OF NOISE CHARACTERISTICS OF TUNNEL DIODES.

Published in:

Fluctuation & Noise Letters, 2013, v. 12, n. 3, p. -1, doi. 10.1142/S0219477513500144

By:

PALENSKIS, VILIUS;
MATUKAS, JONAS;
VYŠNIAUSKAS, JUOZAS;
PRALGAUSKAITĖ, SANDRA;
SHTRIKMAN, HADAS;
SELIUTA, DALIUS;
KAŠALYNAS, IRMANTAS;
VALUŠIS, GINTARAS

Publication type:

Article

SHOT NOISE SUPPRESSION IN INDIVIDUAL AND SERIES ARRAYS OF MAGNETIC TUNNEL JUNCTIONS.

Published in:

Fluctuation & Noise Letters, 2011, v. 10, n. 4, p. 381, doi. 10.1142/S0219477511000648

By:

GOKCE, AISHA;
STEARRETT, RYAN;
NOWAK, E. R.;
NORDMAN, C.;
Yakimov, Arkady Victorovich

Publication type:

Article

Formulation of charge transport in molecular junctions with time-dependent molecule-leads coupling operators.

Published in:

Fortschritte der Physik / Progress of Physics, 2017, v. 65, n. 6/8, p. n/a, doi. 10.1002/prop.201600048

By:

Peskin, Uri

Publication type:

Article

Oxidized-monolayer tunneling barrier for strong Fermi-level depinning in layered InSe transistors.

Published in:

NPJ 2D Materials & Applications, 2019, v. 3, n. 1, p. 1, doi. 10.1038/s41699-019-0133-3

By:

Chen, Yi-Hsun;
Cheng, Chih-Yi;
Chen, Shao-Yu;
Rodriguez, Jan Sebastian Dominic;
Liao, Han-Ting;
Watanabe, Kenji;
Taniguchi, Takashi;
Chen, Chun-Wei;
Sankar, Raman;
Chou, Fang-Cheng;
Chiu, Hsiang-Chih;
Wang, Wei-Hua

Publication type:

Article

Investigation of nickel‐63 radioisotope‐powered GaN betavoltaic nuclear battery.

Published in:

International Journal of Energy Research, 2019, v. 43, n. 14, p. 8725, doi. 10.1002/er.4871

By:

Aydin, S.;
Kam, E.

Publication type:

Article

Rapid microwave synthesis of Cu2ZnSnS4 nanocrystals for photovoltaic junctions.

Published in:

International Journal of Energy Research, 2019, v. 43, n. 1, p. 589, doi. 10.1002/er.4256

By:

Krishnan, Ambily;
Vishnu, Geetha;
Kannan, Pradeesh

Publication type:

Article

The effect of phenylboronic acid-based self-assembled monolayers on the performance of organic field-effect transistors (OFETs).

Published in:

Turkish Journal of Physics, 2019, v. 43, n. 2, p. 207, doi. 10.3906/fiz-1812-3

By:

YILMAZ ALIÇ, Tuğbahan

Publication type:

Article

Exact Analytical Solution of the Diode Ideality Factor of a pn Junction Device Using Lambert W-function Model.

Published in:

Turkish Journal of Physics, 2007, v. 31, n. 1, p. 7

By:

Bayhan, Habibe;
Kavasoglu, Sertap

Publication type:

Article

انتخاب بهینه مبدل نیمههادي جهت افزایش توان و بازدهی در باتريهاي بتاولتائیک با 147Pm 63 و Ni ،³H چشمههاي بتازاي

Published in:

Advanced Materials in Engineering, 2024, v. 43, n. 3, p. 46, doi. 10.47176/jame.43.3.1048

By:

داود قاسمآبادي;
حسین ذکی دیزجی;
مسعود عبدالهزاده

Publication type:

Article

Copper gallium selenide thin films on Si by magnetron sputtering for photovoltaic applications: Composition, junction formation and metal contacts.

Published in:

Cogent Engineering, 2018, v. 5, n. 1, p. 1, doi. 10.1080/23311916.2018.1514941

By:

Awaah, M. A.;
Obahiagbon, U.;
Mohammed, H.;
Akpa, O.;
Awaah, I.;
Isaac-Smith, T.;
Korivi, N.;
Posthill, J. B.;
Das, K.

Publication type:

Article

Light-Induced Modulation in Resistance Switching of Carbon Nanotube/BiFeO 3 /Pt Heterostructure.

Published in:

Integrated Ferroelectrics, 2012, v. 134, n. 1, p. 58, doi. 10.1080/10584587.2012.664985

By:

Chen, Yu;
Zang, Yongyuan;
Xie, Dan;
Wu, Xiao;
Ren, Tianling;
Wei, Jinquan;
Wang, Kunlin;
Wu, Dehai;
Zhu, Hongwei

Publication type:

Article

FLOATING-BASE BJT TYPE ESD DEVICE FOR RFID CHIP.

Published in:

Integrated Ferroelectrics, 2009, v. 105, n. 1, p. 45, doi. 10.1080/10584580903062457

By:

JINYONG CHUNG;
HEE-BOK KANG;
SUK-KYOUNG HONG;
GYUHAN YOON;
MAN YOUNG SUNG;
BOK-GIL CHOI

Publication type:

Article

THE EFFECT OF REDUCED GATE LEAKAGE ON IMPROVED RETENTION TIME OF METAL-FERROELECTRIC (PbZr0.53Ti0.47O3)-INSULATOR (ZrO2)-SEMICONDUCTOR CAPACITORS.

Published in:

Integrated Ferroelectrics, 2008, v. 98, n. 1, p. 113, doi. 10.1080/10584580802092506

By:

Wen-chieh Shih;
Joseph Ya-min Lee

Publication type:

Article

Junction parameter extraction for electronic device characterization.

Published in:

Active & Passive Electronic Components, 2004, v. 27, n. 2, p. 61, doi. 10.1080/1042015031000073805

By:

S. Dib;
Salame, C.;
Toufik, N.;
Khoury, A.;
Péelanchon, F.;
Mialhe, P.

Publication type:

Article

A NEW JUNCTION PARAMETERS DETERMINATION USING THE DOUBLE EXPONENTIAL MODEL.

Published in:

Active & Passive Electronic Components, 2002, v. 25, n. 3, p. 225, doi. 10.1080/08827510213496

By:

Dib, S.;
Khoury, A.;
Pélanchon, F.;
Mialhe, P.

Publication type:

Article

MOCVD-GROWN InGaP/GaAs EMITTER DELTA DOPING HETEROJUNCTION BIPOLAR TRANSISTORS.

Published in:

Active & Passive Electronic Components, 2002, v. 25, n. 3, p. 239, doi. 10.1080/08827510213499

By:

Yarn, K.F.

Publication type:

Article

Analytical formulas and measurement technique for the built-in potential of practical semiconductor junctions.

Published in:

Carpathian Journal of Electrical Engineering, 2019, v. 12, n. 2, p. 11, doi. 10.2478/cjece-2019-0010

By:

Cristea, Miron

Publication type:

Article

Facile synthesize of CdS QDs decorated Bi2MoO6/Bi2Mo3O12 heterojunction photocatalysts and enhanced performance of visible light removal of organic pollutants.

Published in:

Environmental Technology, 2021, v. 42, n. 23, p. 3581, doi. 10.1080/09593330.2020.1737243

By:

Wang, Jingling;
Lin, Wensong;
Dong, Manru;
Xing, Yue;
Zhang, Qicheng

Publication type:

Article

Mapping of Au/a-IGZO Schottky contacts by using scanning internal photoemission microscopy.

Published in:

Physica Status Solidi (B), 2017, v. 254, n. 2, p. n/a, doi. 10.1002/pssb.201600587

By:

Shiojima, Kenji;
Shingo, Masato

Publication type:

Article

Raman spectroscopy from buried semiconductor interfaces: Structural and electronic properties.

Published in:

Physica Status Solidi (B), 2015, v. 252, n. 1, p. 19, doi. 10.1002/pssb.201350410

By:

Geurts, Jean

Publication type:

Article

All-electrical control of thermal-spin current in a parallel double quantum dot tunneling junction.

Published in:

Physica Status Solidi (B), 2014, v. 251, n. 8, p. 1558, doi. 10.1002/pssb.201451078

By:

Shang, Enming;
Zhang, Zhengzhong;
Jiang, Liang

Publication type:

Article

The importance of anchoring ligands of binuclear sensitizers on electron transfer processes and photovoltaic action in dye-sensitized solar cells.

Published in:

Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-44015-8

By:

Bartkowiak, Aleksandra;
Korolevych, Oleksandr;
Gierczyk, Błażej;
Pelczarski, Daniel;
Bossi, Alberto;
Klein, Maciej;
Popenda, Łukasz;
Stampor, Waldemar;
Makowska-Janusik, Malgorzata;
Zalas, Maciej

Publication type:

Article

Influence of the Mn5Ge3/Ge ohmic-contact interface on the Seebeck coefficient of the Mn5Ge3/Ge bilayer.

Published in:

Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-43843-y

By:

Portavoce, Alain;
Hassak, Siham;
Bertoglio, Maxime

Publication type:

Article

Correction: Equivalent imperfect interface model of PN junction of piezoelectric semiconductor for the multi-field coupled waves propagation.

Published in:

2024

By:

Wei, Zibo;
Wei, Peijun;
Xu, Chunyu;
Guo, Xiao

Publication type:

Correction Notice