Works matching DE "SEMICONDUCTOR junctions"

Results: 778

Effect of the Ultra-thin GaN Interlayer on the Mechanisms of Conduction in Au/GaAs Schottky Barrier Diodes.

Published in:

Semiconductors, 2025, v. 59, n. 6, p. 551, doi. 10.1134/S1063782624602589

By:

Khales, Hammouche;
Kacha, Arslane Hatem;
Akkal, Boudali;
Benamara, Zineb

Publication type:

Article

Numerical Investigation of Piezoelectric Potential of Nanowire for Solar Energy Harvesting Using InGaN.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 7, p. 5299, doi. 10.1007/s11664-025-11986-5

By:

Ammar, Sahar;
Belghouthi, Rabeb;
Aoun, Nejiba;
Rhouma, Mounir Ben El Hadj;
Aillerie, Michel

Publication type:

Article

Analysis of the electromechanical coupling characteristics of piezoelectric semiconductor PN junction shell structures.

Published in:

Applied Mathematics & Mechanics, 2025, v. 46, n. 6, p. 1167, doi. 10.1007/s10483-025-3259-6

By:

Wang, Tiqing;
Zhu, Feng;
Li, Peng;
Xu, Zelin;
Ma, Tingfeng;
Kuznetsova, I.;
Qian, Zhenghua

Publication type:

Article

Perovskite Homojunction Solar Cells by Buried Interface Engineering.

Published in:

Angewandte Chemie, 2025, v. 137, n. 23, p. 1, doi. 10.1002/ange.202502994

By:

Liu, Manting;
Xu, Jinmei;
Yang, Haoran;
Guan, Zhiqiang;
Zhang, Chunhui;
Li, Qian;
Liu, Bo;
Yan, Kai;
Jin, Yaocheng;
Yang, Qing‐Dan;
Huo, Yanping;
Cheng, Yuanhang

Publication type:

Article

Implanter, RTP system issues for ultrashallow junction formation.

Published in:

Solid State Technology, 2001, v. 44, n. 9, p. 77

By:

Amen, Mike;
Hebb, Jeffrey

Publication type:

Article

Ultrashallow junction formation by ion implant and RTA.

Published in:

Solid State Technology, 1997, v. 40, n. 12, p. 71

By:

Downey, Daniel F.;
Osburn, Carlton M.

Publication type:

Article

Thermionic Injection and Contact Resistance Model for Bottom Contact Organic Field-Effect Transistors.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 6, p. 3078, doi. 10.1007/s11664-024-11065-1

By:

Saikh, Samayun;
Rajan, Nikhitha;
Mukherjee, Ayash Kanto

Publication type:

Article

Electroless deposition of gold on silicon and its potential applications: review.

Published in:

Surface Engineering, 2016, v. 32, n. 5, p. 321, doi. 10.1179/1743294415Y.0000000060

By:

Lahiri, A.;
Kobayashi, S.-I.

Publication type:

Article

Liquid-Phase Epitaxial Growth of Two-Dimensional Semiconductor Hetero-nanostructures.

Published in:

Angewandte Chemie, 2015, v. 127, n. 6, p. 1861, doi. 10.1002/ange.201410890

By:

Tan, Chaoliang;
Zeng, Zhiyuan;
Huang, Xiao;
Rui, Xianhong;
Wu, Xue-Jun;
Li, Bing;
Luo, Zhimin;
Chen, Junze;
Chen, Bo;
Yan, Qingyu;
Zhang, Hua

Publication type:

Article

Investigation of the temperature-dependent electrical properties of Au/PEDOT:WO3/p-Si hybrid device.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 17, p. 16676, doi. 10.1007/s10854-019-02048-8

By:

Keskin, Mine;
Akkaya, Abdullah;
Ayyıldız, Enise;
Uygun Öksüz, Ayşegül;
Özbay Karakuş, Mücella

Publication type:

Article

Few layer g-C3N4 decorated flower-like ZnO for visible light photocatalytic reduction of Cr(VI).

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 9, p. 8577, doi. 10.1007/s10854-019-01178-3

By:

Yan, Xin;
Li, Jintong;
Ai, Tao;
Su, Xinghua;
Wang, Zhenjun;
Zhao, Peng

Publication type:

Article

Valence-band offsets of InGaZnO4, LaAlO3, and SrTiO3 heterostructures explained by interface-induced gap states.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 23, p. 19607, doi. 10.1007/s10854-018-0161-3

By:

Mönch, Winfried

Publication type:

Article

Effects of annealing and Nb doping on the electrical properties of p-Si/n-β-Ga2O3:Nb heterojunction.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 22, p. 19028, doi. 10.1007/s10854-018-0028-7

By:

Zhang, Hao;
Deng, Jinxiang;
He, Yafeng;
Duan, Ping;
Liang, Xiaoyang;
Li, Ruidong;
Qin, Changdong;
Pan, Zhiwei;
Bai, Zhiying;
Wang, Jiyou

Publication type:

Article

On the band-structure lineup at GaO, GdO, and GaO(GdO) heterostructures and GaO Schottky contacts.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 2, p. 1444, doi. 10.1007/s10854-015-3909-z

By:

Mönch, Winfried

Publication type:

Article

Electrical characterization of a pre-ceramic polymer modified Ag/poly(hydridocarbyne)/ p-Si Schottky barrier diode.

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 12, p. 2282, doi. 10.1007/s10854-012-0819-1

By:

Başman, Necati;
Uzun, Orhan;
Fiat, Songül;
Alkan, Cemil;
Çankaya, Güven

Publication type:

Article

The roles of “free” and “trapped” charges in single-crystal rubrene organic field-effect transistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 6, p. 535, doi. 10.1007/s10854-009-9953-9

By:

Kwok, H. L.

Publication type:

Article

In-plane anisotropic electrical and optical properties of gold-doped rhenium disulphide.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 476, doi. 10.1007/s10854-008-9685-2

By:

Liang, C. H.;
Tiong, K. K.;
Huang, Y. S.;
Dumcenco, D.;
Ho, C. H.

Publication type:

Article

Enhancement of Faraday rotation in 3D/Bi:YIG/1D photonic heterostructures.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 493, doi. 10.1007/s10854-008-9689-y

By:

Fujikawa, R.;
Baryshev, A. V.;
Khanikaev, A. B.;
Kim, J.;
Uchida, H.;
Inoue, M.

Publication type:

Article

Optical spectroscopy of a semi-insulating GaAs/AlGaAs multiple quantum well system near double exciton–polariton and Bragg resonance.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 699, doi. 10.1007/s10854-007-9382-6

By:

Chaldyshev, V. V.;
Shkolnik, A. S.;
Evtikhiev, V. P.;
Holden, T.

Publication type:

Article

Energy level alignment at interfaces between 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butyl phenyl)-1, 2, 4-triazole (TAZ) and metals (Ca, Mg, Ag, and Au): experiment and theory.

Published in:

Journal of Solid State Electrochemistry, 2012, v. 16, n. 3, p. 1141, doi. 10.1007/s10008-011-1497-2

By:

Bhatt, Mahesh;
Baba, Akihisa;
Sakurai, Takeaki;
Akimoto, Katsuhiro

Publication type:

Article

Sensitivity of dislocation engineered Si p- n junctions to influence of illumination and ultrasound.

Published in:

Inorganic Materials, 2009, v. 45, n. 11, p. 1213, doi. 10.1134/S002016850911003X

By:

Davletova, A. Sh.;
Karazhanov, S. Zh.

Publication type:

Article

Chromium oxide nanolayers on gallium arsenide.

Published in:

Inorganic Materials, 2006, v. 42, n. 4, p. 368, doi. 10.1134/S0020168506040066

By:

Ezhovskii, Yu.;
Egorov, A.

Publication type:

Article

The Extraction of the Density of States of Atomic-Layer-Deposited ZnO Transistors by Analyzing Gate-Dependent Field-Effect Mobility.

Published in:

Electronic Materials, 2024, v. 5, n. 4, p. 239, doi. 10.3390/electronicmat5040016

By:

Yoon, Minho

Publication type:

Article

Investigation of nickel‐63 radioisotope‐powered GaN betavoltaic nuclear battery.

Published in:

International Journal of Energy Research, 2019, v. 43, n. 14, p. 8725, doi. 10.1002/er.4871

By:

Aydin, S.;
Kam, E.

Publication type:

Article

Rapid microwave synthesis of Cu2ZnSnS4 nanocrystals for photovoltaic junctions.

Published in:

International Journal of Energy Research, 2019, v. 43, n. 1, p. 589, doi. 10.1002/er.4256

By:

Krishnan, Ambily;
Vishnu, Geetha;
Kannan, Pradeesh

Publication type:

Article

High Performance Solution Processed n‐Type OTFTs through Surface Engineered F–F Interactions Using Asymmetric Silicon Phthalocyanines.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 12, p. 1, doi. 10.1002/aelm.202200696

By:

Cranston, Rosemary R.;
Vebber, Mário C.;
Faleiro Berbigier, Jônatas;
Brusso, Jaclyn;
Kelly, Timothy L.;
Lessard, Benoît H.

Publication type:

Article

Gate‐Tunable Photovoltaic Behavior and Polarized Image Sensor Based on All‐2D TaIrTe4/MoS2 Van Der Waals Schottky Diode.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200551

By:

Zhang, Li;
Han, Xiaoning;
Zhang, Shihao;
Wang, Hanyu;
Huang, Ying;
Zheng, Zhaoqiang;
Huo, Nengjie;
Gao, Wei;
Li, Jingbo

Publication type:

Article

Electrode Engineering in MoS2 MOSFET: Different Semiconductor/Metal Interfaces.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 10, p. 1, doi. 10.1002/aelm.202200513

By:

Li, Yang;
Zhang, Xisai;
Duan, Xinpei;
Niu, Wencheng;
Zhao, Shengjie;
He, Xiaobo;
Huang, Hao;
Liu, Xingqiang;
Zou, Xuming;
Li, Lei;
Shan, Fukai;
Yang, Zhenyu

Publication type:

Article

Tunneling‐Effect‐Boosted Interfacial Charge Trapping toward Photo‐Organic Transistor Memory.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 7, p. 1, doi. 10.1002/aelm.202101349

By:

Wei, Zi‐Yuan;
Prakoso, Suhendro Purbo;
Li, Yen‐Ting;
Chiu, Yu‐Cheng

Publication type:

Article

Reconfigurable InSe Electronics with van der Waals Integration.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101176

By:

Hu, Siqi;
Luo, Xiaoguang;
Xu, Jinpeng;
Zhao, Qinghua;
Cheng, Yingchun;
Wang, Tao;
Jie, Wanqi;
Castellanos‐Gomez, Andres;
Gan, Xuetao;
Zhao, Jianlin

Publication type:

Article

High Electrical Anisotropic Multilayered Self‐Assembled Organic Films Based on Graphene Oxide and PEDOT:PSS.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 8, p. 1, doi. 10.1002/aelm.202100255

By:

Gaál, Gabriel;
Braunger, Maria Luisa;
Rodrigues, Varlei;
Riul, Antonio;
Gomes, Henrique Leonel

Publication type:

Article

Individual SWCNT Transistor with Photosensitive Planar Junction Induced by Two‐Photon Oxidation.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 3, p. 1, doi. 10.1002/aelm.202000872

By:

Emelianov, Aleksei V.;
Nekrasov, Nikita P.;
Moskotin, Maksim V.;
Fedorov, Georgy E.;
Otero, Nerea;
Romero, Pablo M.;
Nevolin, Vladimir K.;
Afinogenov, Boris I.;
Nasibulin, Albert G.;
Bobrinetskiy, Ivan I.

Publication type:

Article

Interface Modification in Three‐Terminal Organic Memory and Synaptic Device.

Published in:

Advanced Electronic Materials, 2020, v. 6, n. 12, p. 1, doi. 10.1002/aelm.202000641

By:

Zheng, Chaoyue;
Liao, Yuan;
Han, Su‐Ting;
Zhou, Ye

Publication type:

Article

2D Insulator–Metal Transition in Aerosol‐Jet‐Printed Electrolyte‐Gated Indium Oxide Thin Film Transistors.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 3, p. 1, doi. 10.1002/aelm.201600369

By:

Xie, Wei;
Zhang, Xin;
Leighton, Chris;
Frisbie, C. Daniel

Publication type:

Article

Copper gallium selenide thin films on Si by magnetron sputtering for photovoltaic applications: Composition, junction formation and metal contacts.

Published in:

Cogent Engineering, 2018, v. 5, n. 1, p. 1, doi. 10.1080/23311916.2018.1514941

By:

Awaah, M. A.;
Obahiagbon, U.;
Mohammed, H.;
Akpa, O.;
Awaah, I.;
Isaac-Smith, T.;
Korivi, N.;
Posthill, J. B.;
Das, K.

Publication type:

Article

Predicting band offset of lattice matched ZnO and BeCdO heterojunction from first principles.

Published in:

Materials Research Letters, 2019, v. 7, n. 6, p. 232, doi. 10.1080/21663831.2019.1593253

By:

Liu, Xiaojie;
Chen, Junli;
Bai, Lina;
Yao, Chengbao;
Li, Hua;
Yin, Haitao;
Yin, Hang;
Wang, Yin

Publication type:

Article

Artificially controlled synthesis of graphene intramolecular heterojunctions for phonon engineering.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 8, p. 692, doi. 10.1002/pssr.201409210

By:

Anno, Yuki;
Takei, Kuniharu;
Akita, Seiji;
Arie, Takayuki

Publication type:

Article

Dopant profiling in silicon nanowires measured by scanning capacitance microscopy.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 4, p. n/a, doi. 10.1002/pssr.201409041

By:

Bassani, Franck;
Periwal, Priyanka;
Salem, Bassem;
Chevalier, Nicolas;
Mariolle, Denis;
Audoit, Guillaume;
Gentile, Pascal;
Baron, Thierry

Publication type:

Article

Determination Of The Memory Switching Action In CdS/SiO/CdTe Structure.

Published in:

Al-Rafadain Engineering Journal, 2011, v. 19, n. 1, p. 1

By:

Ali, Luqman Sufer

Publication type:

Article

Photovoltaic Properties of Poly(Triphenylamine-Thiazolo[5,4-d] Thiazole) Copolymer Dye in Bulk-Hetorojunction Organic Solar Cells.

Published in:

Journal of Polymer Materials, 2017, v. 34, n. 2, p. 391

By:

OLGUN, UĞURSOY;
GÜLFEN, MUSTAFA;
HİZALAN, GÖNÜL;
ÇİRPAN, ALİ;
TOPPARE, LEVENT

Publication type:

Article

Substrate Integrated Waveguide (SIW) Diplexer with Novel Input/Output Coupling and no Separate Junction.

Published in:

Progress in Electromagnetics Research M, 2018, v. 67, p. 75, doi. 10.2528/pierm18021603

By:

Nwajana, Augustine O.;
Dainkeh, Amadu;
Siok Kiam Yeo, Kenneth

Publication type:

Article

THEORETICAL INVESTIGATION OF SYMMETRICAL THREE-TERMINAL JUNCTIONS.

Published in:

Studia Universitatis Babes-Bolyai, Chemia, 2016, v. 61, n. 3 Tom1, p. 285

By:

NAGY, KATALIN;
NAGY, CSABA L.;
DIUDEA, MIRCEA V.

Publication type:

Article

MECHANISTIC STUDY OF SE AND GE SEMICONDUCTORS ELECTRODEPOSITION.

Published in:

Studia Universitatis Babes-Bolyai, Chemia, 2009, n. 4, p. 79

By:

Tutunaru, Bogdan;
Samide, Adriana;
Preda, Mircea

Publication type:

Article

Retracted: Performance Analysis and Development of a Semiconductor Junction Rectifier with Multicolor Coding for Indoor Farm Applications.

Published in:

2023

By:

Science and Engineering, Advances in Materials

Publication type:

Correction Notice

Equivalent impedance method for determining the junction temperature of LED array.

Published in:

Modern Physics Letters B, 2017, v. 31, n. 19-21, p. -1, doi. 10.1142/S0217984917400218

By:

Chu, Jing;
Rao, Feng;
Gguo, Jie

Publication type:

Article

A non-contact method for determining the junction temperature of GaN-based blue light LED.

Published in:

Modern Physics Letters B, 2017, v. 31, n. 19-21, p. -1, doi. 10.1142/S0217984917400231

By:

Jie, Guo;
Ma, Junshan;
Feng, Rao

Publication type:

Article

Performance analysis of junctionless carbon nanotube field effect transistors using NEGF formalism.

Published in:

Modern Physics Letters B, 2016, v. 30, n. 10, p. -1, doi. 10.1142/S0217984916501256

By:

Barbastegan, Saber;
Shahhoseini, Ali

Publication type:

Article

EMPALMADORA DE FIBRA OPTICA AUTOMATIZADA.

Published in:

Revista Colombiana de Física, 2006, v. 38, n. 2, p. 874

By:

Pinto, Holmes E.;
Torres, Cesar;
Mattos, Lorenzo

Publication type:

Article

Pulse Heating and Negative Magnetic Relaxation on Bulk HTS Annuli.

Published in:

Journal of Superconductivity & Novel Magnetism, 2015, v. 28, n. 9, p. 2815, doi. 10.1007/s10948-015-3116-4

By:

Korotkov, V.;
Krasnoperov, E.;
Kartamyshev, A.

Publication type:

Article

Multi-vortex Dynamics in Junctions of Charge Density Waves.

Published in:

Journal of Superconductivity & Novel Magnetism, 2015, v. 28, n. 4, p. 1343, doi. 10.1007/s10948-014-2916-2

By:

Yi, T.;
Bravo, A.;
Kirova, N.;
Brazovskii, S.

Publication type:

Article