Works matching DE "SEMICONDUCTOR junctions"

Results: 780

Advances in Interfacial Engineering and Structural Optimization for Diamond Schottky Barrier Diodes.

Published in:

Materials (1996-1944), 2025, v. 18, n. 15, p. 3657, doi. 10.3390/ma18153657

By:

Lu, Shihao;
Zhang, Xufang;
Wang, Shichao;
Li, Mingkun;
Jiao, Shuopei;
Liang, Yuesong;
Wang, Wei;
Zhang, Jing

Publication type:

Article

Synergistic MnO₂–TiO₂ nanocomposite chemiresistor for selective and sensitive breath acetone sensing in diabetes diagnostics.

Published in:

Journal of Materials Science: Materials in Electronics, 2025, v. 36, n. 23, p. 1, doi. 10.1007/s10854-025-15486-4

By:

Srivastava, Shivangi;
Singh, Ajeet;
Yadav, B. C.;
Pandey, Narendra Kumar

Publication type:

Article

Work Function Engineering of Copper Sulfides for 2D Electronics.

Published in:

Small Structures, 2025, v. 6, n. 8, p. 1, doi. 10.1002/sstr.202500060

By:

Park, Hongju;
Lim, Jungmoon;
Kim, Taehun;
Byeon, Junsung;
Eom, Jaesik;
Lee, Seungsub;
Kim, Jaeseok;
Pak, Sangyeon;
Cha, SeungNam

Publication type:

Article

Molecule upgrading metal-semiconductor buried contacts for high-performance and high-ideality single-crystal organic thin-film transistors.

Published in:

National Science Review, 2025, v. 12, n. 7, p. 1, doi. 10.1093/nsr/nwaf207

By:

Wang, Yongji;
Deng, Wei;
Shi, Xinmin;
Ren, Xiaobin;
Li, Bingbing;
Li, Yuan;
Jie, Jiansheng;
Zhang, Xiujuan;
Zhang, Xiaohong

Publication type:

Article

Implanter, RTP system issues for ultrashallow junction formation.

Published in:

Solid State Technology, 2001, v. 44, n. 9, p. 77

By:

Amen, Mike;
Hebb, Jeffrey

Publication type:

Article

Ultrashallow junction formation by ion implant and RTA.

Published in:

Solid State Technology, 1997, v. 40, n. 12, p. 71

By:

Downey, Daniel F.;
Osburn, Carlton M.

Publication type:

Article

Lewis acid catalysis of polydopamine electropolymerisation as a tool for shaping its morphology and electrochemical properties.

Published in:

Journal of Materials Science, 2024, v. 59, n. 20, p. 9126, doi. 10.1007/s10853-024-09722-1

By:

Polaczek, Krzysztof;
Olejnik, Adrian;
Gumieniak, Justyna;
Kramek, Agnieszka;
Karczewski, Jakub;
Siuzdak, Katarzyna

Publication type:

Article

Hall‐effect sensors based on AlGaN/GaN heterojunctions on Si substrates for a wide temperature range.

Published in:

IET Circuits, Devices & Systems (Wiley-Blackwell), 2021, v. 15, n. 8, p. 772, doi. 10.1049/cds2.12067

By:

Kumar, Sagnik;
Muralidharan, R.;
Narayanan, G.

Publication type:

Article

Interface trap states induced underestimation of Schottky barrier height in metal-MX2 junctions.

Published in:

NPJ 2D Materials & Applications, 2025, v. 9, n. 1, p. 1, doi. 10.1038/s41699-025-00576-y

By:

Jawa, Himani;
Verreck, Devin;
Sun, Zheng;
Sutar, Surajit;
de la Rosa, Cesar Javier Lockhart;
Kar, Gouri Sankar;
Appenzeller, Joerg

Publication type:

Article

The Effect of Alkyl Chain Length in Organic Semiconductor and Surface Polarity of Polymer Dielectrics in Organic Thin‐Film Transistors (OTFTs) (Small Methods 11/2023).

Published in:

Small Methods, 2023, v. 7, n. 11, p. 1, doi. 10.1002/smtd.202370058

By:

Choi, Junhwan;
Kim, Min Ju;
Kim, Joo‐Young;
Lee, Eun Kyung;
Lee, Changhyeon;
Park, Youngkeun;
Kang, Juyeon;
Park, Jeong‐Il;
Cho, Byung Jin;
Im, Sung Gap

Publication type:

Article

The Effect of Alkyl Chain Length in Organic Semiconductor and Surface Polarity of Polymer Dielectrics in Organic Thin‐Film Transistors (OTFTs).

Published in:

Small Methods, 2023, v. 7, n. 11, p. 1, doi. 10.1002/smtd.202300628

By:

Choi, Junhwan;
Kim, Min Ju;
Kim, Joo‐Young;
Lee, Eun Kyung;
Lee, Changhyeon;
Park, Youngkeun;
Kang, Juyeon;
Park, Jeong‐Il;
Cho, Byung Jin;
Im, Sung Gap

Publication type:

Article

Modulating the 0D/2D Interface of Hybrid Semiconductors for Enhanced Photoelectrochemical Performances.

Published in:

Small Methods, 2021, v. 5, n. 8, p. 1, doi. 10.1002/smtd.202100109

By:

Li, Faying;
Benetti, Daniele;
Zhang, Min;
Feng, Jinhui;
Wei, Qin;
Rosei, Federico

Publication type:

Article

Heterojunction Photocatalysts Based on 2D Materials: The Role of Configuration.

Published in:

Advanced Sustainable Systems, 2020, v. 4, n. 9, p. 1, doi. 10.1002/adsu.202000130

By:

Su, Qian;
Li, Yao;
Hu, Ran;
Song, Fang;
Liu, Siyuan;
Guo, Cuiping;
Zhu, Shenmin;
Liu, Wenbin;
Pan, Jian

Publication type:

Article

Modeling at The Nanometric Scale of Interfacial Defects of A Semiconductor Heterostructure in The Isotropic And Anisotropic Cases For The Study of The Influence of Stresses.

Published in:

Journal of Solid Mechanics, 2024, v. 16, n. 1, p. 65

By:

Boussaha, A.;
Makhloufi, R.;
Benbouta, R.;
Brioua, M.

Publication type:

Article

Effect of pre-surface treatments on p-Cu2O/Au Schottky junctions.

Published in:

Journal of the National Science Foundation of Sri Lanka, 2021, v. 49, n. 1, p. 61, doi. 10.4038/jnsfsr.v49i1.8942

By:

Kafi, F. S. B.;
Jayathilaka, K. M. D. C.;
Wijesundera, R. P.;
Siripala, W.

Publication type:

Article

Preparation and Electrical Properties of the Bi0.9La0.1Fe0.9Mn0.1O3/SrTiO3:Nb p-n Heterojunctions.

Published in:

Ferroelectrics, 2009, v. 379, n. 1, p. 136, doi. 10.1080/00150190902851952

By:

Vengalis, Bonifacas;
Devenson, Jelena;
Oginskis, Antanas K.;
Lisauskas, Vaclovas;
Dapkus, Leonas;
Maneikis, Andrius

Publication type:

Article

(Ga,Mn)As-Based Magnetic Tunnel Junctions under Electric Field from First Principles.

Published in:

Acta Physica Polonica: A, 2016, v. 130, n. 6, p. 1385, doi. 10.12693/APhysPolA.130.1385

By:

LUO, M.;
SHEN, Y. H.

Publication type:

Article

Fabrication and Properties of the Photosensitive Anisotype n-CdxZn1-xO/p-CdTe Heterojunctions.

Published in:

Acta Physica Polonica: A, 2014, v. 126, n. 5, p. 1163, doi. 10.12693/APhysPolA.126.1163

By:

Khomyak, V. V.;
Brus, V. V.;
Ilashchuk, M. I.;
Orletsky, I. G.;
Shtepliuk, I. I.;
Lashkarev, G. V.

Publication type:

Article

Detector with High Internal Photocurrent Gain Based on ZnO:N.

Published in:

Acta Physica Polonica: A, 2011, v. 119, n. 5, p. 681, doi. 10.12693/APhysPolA.119.681

By:

Kosyachenko, L. A.;
Lashkarev, G. V.;
Ievtushenko, A. I.;
Lazorenko, V. I.;
Sklyarchuk, V. M.;
Sklyarchuk, O. F.

Publication type:

Article

Study and Simulation of Silicon Solar Cells: Technology Evaluation for Photovoltaic Applications.

Published in:

Electrotehnica, Electronica, Automatica, 2016, v. 64, n. 3, p. 35

By:

BENBEKHTI, Fatiha;
BENMANSOUR, Abdelhalim

Publication type:

Article

The Role of Physics in the Development of Microelectronics.

Published in:

Electrotehnica, Electronica, Automatica, 2014, v. 62, n. 3, p. 70

By:

LAKATOŞ, Eugen Ştefan

Publication type:

Article

Tailoring resistive switching in Pt/SrTiO3 junctions by stoichiometry control.

Published in:

Scientific Reports, 2015, p. 11079, doi. 10.1038/srep11079

By:

Mikheev, Evgeny;
Hwang, Jinwoo;
Kajdos, Adam P.;
Hauser, Adam J.;
Stemmer, Susanne

Publication type:

Article

Charge-Transfer Induced Magnetic Field Effects of Nano-Carbon Heterojunctions.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep06126

By:

Wei Qin;
Maogang Gong;
Shastry, Tejas;
Hersam, Mark C.;
Ren, Shenqiang

Publication type:

Article

Tandem-structured, hot electron based photovoltaic cell with double Schottky barriers.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep04580

By:

Young Keun Lee;
Hyosun Lee;
Jeong Young Park

Publication type:

Article

Tuned NV emission by in-plane Al-Schottky junctions on hydrogen terminated diamond.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep03634

By:

Schreyvogel, Christoph;
Wolfer, Marco;
Hiromitsu Kato;
Schreck, Matthias;
Nebel, Christoph E.

Publication type:

Article

Plasmonic Amplification with Ultra-High Optical Gain at Room Temperature.

Published in:

Scientific Reports, 2013, p. 1, doi. 10.1038/srep01967

By:

Ning Liu;
Hong Wei;
Jing Li;
Zhuoxian Wang;
Xiaorui Tian;
Anlian Pan;
Hongxing Xu

Publication type:

Article

Erratum: Dipolar Coupling at Interfaces of Ultrathin Semiconductors, Semimetals, Plasmonic Nanoparticles and Molecules.

Published in:

2025

By:

Greten, Lara;
Salzwedel, Robert;
Katzer, Manuel;
Mittenzwey, Henry;
Christiansen, Dominik;
Knorr, Andreas;
Selig, Malte

Publication type:

Correction Notice

Erratum: Dipolar Coupling at Interfaces of Ultrathin Semiconductors, Semimetals, Plasmonic Nanoparticles and Molecules.

Published in:

2025

By:

Greten, Lara;
Salzwedel, Robert;
Katzer, Manuel;
Mittenzwey, Henry;
Christiansen, Dominik;
Knorr, Andreas;
Selig, Malte

Publication type:

Correction Notice

Dipolar Coupling at Interfaces of Ultrathin Semiconductors, Semimetals, Plasmonic Nanoparticles, and Molecules.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 1, p. 1, doi. 10.1002/pssa.202300102

By:

Greten, Lara;
Salzwedel, Robert;
Katzer, Manuel;
Mittenzwey, Henry;
Christiansen, Dominik;
Knorr, Andreas;
Selig, Malte

Publication type:

Article

Hole Injection Characteristics and Annealing Temperature Dependence for Organic Light‐Emitting Diodes Using Spontaneous Polarization.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 24, p. 1, doi. 10.1002/pssa.202300161

By:

Fukazawa, Ryosuke;
Maegawa, Yoshiki;
Morimoto, Masahiro;
Matsubara, Ryosuke;
Kubono, Atsushi;
Naka, Shigeki

Publication type:

Article

Magnetic Field Effect in Hydrogen‐Bonded Semiconductor‐Based Organic Field‐Effect Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 7, p. 1, doi. 10.1002/pssa.202200821

By:

Saadi, Donia;
Yumusak, Cigdem;
Zrinski, Ivana;
Mardare, Andrei Ionut;
Romdhane, Samir;
Sariciftci, Niyazi Serdar;
Irimia-Vladu, Mihai;
Scharber, Markus Clark

Publication type:

Article

Diamond Nanowire Transistor with High Current Capability.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 6, p. 1, doi. 10.1002/pssa.202100622

By:

Pakpour-Tabrizi, Alexander C.;
Yosinski, Shari;
Jennings-Moors, Ralph;
Kobos, Zachary A.;
Sawtelle, Sonya D.;
Reed, Mark A.;
Jackman, Richard B.

Publication type:

Article

Efficient Electrical Transport Through Oxide‐Mediated InP‐on‐Si Hybrid Interfaces Bonded at 300 °C.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 3, p. 1, doi. 10.1002/pssa.202000317

By:

Talneau, Anne;
Beaudoin, Grégoire;
Patriarche, Gilles;
Ducroquet, Frédérique

Publication type:

Article

Editorial.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 8, p. N.PAG, doi. 10.1002/pssa.201900251

By:

Modreanu, Mircea;
Cornet, Charles;
Durand, Olivier;
Fujiwara, Hiroyuki;
Jellison, Gerald E.;
Bell, Gavin;
Merckling, Clement

Publication type:

Article

Two‐Photon Photoemission Spectroscopy for Studying Energetics and Electron Dynamics at Semiconductor Interfaces.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 8, p. N.PAG, doi. 10.1002/pssa.201800738

By:

Friedrich, Dennis;
Sippel, Philipp;
Supplie, Oliver;
Hannappel, Thomas;
Eichberger, Rainer

Publication type:

Article

Al2O3 Insertion Layer for Improved PEALD SiO2/(Al)GaN Interfaces.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 5, p. 1, doi. 10.1002/pssa.201700498

By:

Gao, Jianyi;
Hao, Mei;
Li, Wenwen;
Xu, Zheng;
Mandal, Saptarshi;
Nemanich, Robert;
Chowdhury, Srabanti

Publication type:

Article

Second Breakdown and Robustness of Vertical and Lateral GaN Power Field-Effect Transistors.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 12, p. n/a, doi. 10.1002/pssa.201600822

By:

Guo, Zhibo;
Hitchcock, Collin;
Chow, Tat‐sing Paul

Publication type:

Article

Graphite/SiC junctions and their electrical characteristics.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 9, p. n/a, doi. 10.1002/pssa.201700143

By:

Yatskiv, Roman;
Grym, Jan

Publication type:

Article

Improved photocurrent of PDPP3T based organic Schottky junctions via solution-processed HAT-CN and TPBi as anode and cathode buffer layers.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 9, p. n/a, doi. 10.1002/pssa.201700178

By:

Yang, Fang;
Wang, Chao;
Yu, Jun Le;
Zheng, Yan Qiong;
Wei, Bin;
Li, Xi Feng;
Yang, Xu Yong

Publication type:

Article

CuI-based hybrid junction in photovoltaic devices with semitransparent cathode.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 9, p. n/a, doi. 10.1002/pssa.201700186

By:

Travkin, Vlad V.;
Yunin, Pavel A.;
Luk'yanov, Andrey Y.;
Stuzhin, Pavel A.;
Pakhomov, Georgy L.

Publication type:

Article

Improved photocurrent of PDPP3T based organic Schottky junctions via solution-processed HAT-CN and TPBi as anode and cathode buffer layers (Phys. Status Solidi A 9∕2017).

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 9, p. n/a, doi. 10.1002/pssa.201770157

By:

Yang, Fang;
Wang, Chao;
Yu, Jun Le;
Zheng, Yan Qiong;
Wei, Bin;
Li, Xi Feng;
Yang, Xu Yong

Publication type:

Article

RF loss mechanisms in GaN-based high-electron-mobility-transistor on silicon: Role of an inversion channel at the AlN/Si interface.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 7, p. n/a, doi. 10.1002/pssa.201600944

By:

Luong, Tien Tung;
Lumbantoruan, Franky;
Chen, Yen‐Yu;
Ho, Yen‐Teng;
Weng, You‐Chen;
Lin, Yueh‐Chin;
Chang, Shane;
Chang, Edward‐Yi

Publication type:

Article

Model experiments on growth modes and interface electronics of CuInS2: Ultrathin epitaxial films on GaAs(100) substrates.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 9, p. 1981, doi. 10.1002/pssa.201330429

By:

Calvet, Wolfram;
Lewerenz, Hans‐Joachim;
Pettenkofer, Christian

Publication type:

Article

Dual-acceptor doped p-ZnO:(As,Sb)/ n-GaN heterojunctions grown by PA-MBE as a spectrum selective ultraviolet photodetector.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 9, p. 2072, doi. 10.1002/pssa.201300758

By:

Przeździecka, E.;
Wierzbicka, A.;
Dłużewski, P.;
Stachowicz, M.;
Jakieła, R.;
Gościński, K.;
Pietrzyk, M. A.;
Kopalko, K.;
Kozanecki, A.

Publication type:

Article

Recent and forthcoming publications in pss.

Published in:: 2013
Publication type:: Other

Simulation of the influence of interface states on capacitance characteristics of insulator/ Al Ga N/ Ga N heterojunctions.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 7, p. 1340, doi. 10.1002/pssa.201228644

By:

Osvald, J.

Publication type:

Article

Contacting metallic nanoparticles on transparent substrates.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 7, p. 1311, doi. 10.1002/pssa.201228769

By:

Erbe, A.;
Wiesenhütter, U.;
Grebing, J.;
Fassbender, J.

Publication type:

Article

The Schottky Barrier Problem.

Published in:

Contemporary Physics, 1982, v. 23, n. 4, p. 329, doi. 10.1080/00107518208237085

By:

Williams, R.H.

Publication type:

Article

Vibrational analysis of single-walled carbon nanotube/graphene junctions using finite element modeling.

Published in:

European Physical Journal - Applied Physics, 2016, v. 76, n. 2, p. 1, doi. 10.1051/epjap/2016160173

By:

Ansari, Reza;
Rouhi, Saeed;
Shahnazari, Ayoub

Publication type:

Article

Stacking selected polarization switching and phase transition in vdW ferroelectric α-In2Se3 junction devices.

Published in:

Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-54841-7

By:

Wu, Yuyang;
Zhang, Tianjiao;
Guo, Deping;
Li, Bicheng;
Pei, Ke;
You, Wenbin;
Du, Yiqian;
Xing, Wanchen;
Lai, Yuxiang;
Ji, Wei;
Zhao, Yuda;
Che, Renchao

Publication type:

Article