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Boosting Efficiency and Stability of NiO<sub>x</sub>‐Based Inverted Perovskite Solar Cells Through D–A Type Semiconductor Interface Modulation.
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- Advanced Functional Materials, 2024, v. 34, n. 25, p. 1, doi. 10.1002/adfm.202315157
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- Article
Near‐Ideal Schottky Junction Photodetectors Based on Semimetal‐Semiconductor Van der Waals Heterostructures.
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- Advanced Functional Materials, 2024, v. 34, n. 25, p. 1, doi. 10.1002/adfm.202316267
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- Article
Concepts behind the Redox Photocatalysis with Quantum Dots.
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- ChemCatChem, 2024, v. 16, n. 11, p. 1, doi. 10.1002/cctc.202301740
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- Article
Thermionic Injection and Contact Resistance Model for Bottom Contact Organic Field-Effect Transistors.
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- Journal of Electronic Materials, 2024, v. 53, n. 6, p. 3078, doi. 10.1007/s11664-024-11065-1
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- Article
Lewis acid catalysis of polydopamine electropolymerisation as a tool for shaping its morphology and electrochemical properties.
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- Journal of Materials Science, 2024, v. 59, n. 20, p. 9126, doi. 10.1007/s10853-024-09722-1
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- Article
Emerging Opportunities for Ferroelectric Field‐Effect Transistors: Integration of 2D Materials.
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- Advanced Functional Materials, 2024, v. 34, n. 21, p. 1, doi. 10.1002/adfm.202310438
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- Article
Comparison of p-n and p-i-n vertical diodes based on p-PMItz/n-Si, p-PMItz/n-4HSiC and p-PMItz/i-SiO<sub>2</sub>/n-Si heterojunctions.
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- Journal of Materials Science: Materials in Electronics, 2024, v. 35, n. 14, p. 1, doi. 10.1007/s10854-024-12707-0
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- Article
Role of Semiconductive Property on Selective Cementation Mechanism of Iron Oxides to Gold in Galvanic Interaction with Zero-Valent Aluminum from Gold–Copper Ammoniacal Thiosulfate Solutions.
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- Metals (2075-4701), 2024, v. 14, n. 5, p. 550, doi. 10.3390/met14050550
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- Article
A Novel Bismuth‐Rich Bi<sub>3</sub>O<sub>4</sub>Cl/Bi<sub>x</sub>O<sub>y</sub>I<sub>z</sub> Composite with Intensified Photocatalytic Internal Electrical Field for Photocatalytic Degradation of Antibiotics.
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- Solar RRL, 2024, v. 8, n. 9, p. 1, doi. 10.1002/solr.202400099
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- Article
Three-Step Process for Efficient Solar Cells with Boron-Doped Passivated Contacts.
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- Energies (19961073), 2024, v. 17, n. 6, p. 1319, doi. 10.3390/en17061319
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- Article
Equivalent Circuit Model to Reach Complicated Surface Photovoltage Transient Shapes in ZnO Thin Films.
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- Journal of Nano- & Electronic Physics, 2024, v. 16, n. 2, p. 1, doi. 10.21272/jnep.16(2).02023
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- Article
Single-pixel p-graded-n junction spectrometers.
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- Nature Communications, 2024, v. 15, n. 1, p. 1, doi. 10.1038/s41467-024-46066-5
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- Article
The Impact of Surface Passivation on Kapitza Resistance at the Interface Between a Semiconductor and Liquid Nitrogen.
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- Journal of Low Temperature Physics, 2024, v. 214, n. 3/4, p. 125, doi. 10.1007/s10909-023-03020-x
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- Article
Characterization of a Heterojunction Silicon Solar Cell by Means of Impedance Spectroscopy.
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- Micromachines, 2024, v. 15, n. 2, p. 184, doi. 10.3390/mi15020184
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- Article
Cohesive Properties of Bimaterial Interfaces in Semiconductors: Experimental Study and Numerical Simulation Using an Inverse Cohesive Contact Approach.
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- Materials (1996-1944), 2024, v. 17, n. 2, p. 289, doi. 10.3390/ma17020289
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- Article
Equivalent imperfect interface model of PN junction of piezoelectric semiconductor for the multi-field coupled waves propagation.
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- Acta Mechanica, 2024, v. 235, n. 1, p. 73, doi. 10.1007/s00707-023-03643-x
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- Article
Correction: Equivalent imperfect interface model of PN junction of piezoelectric semiconductor for the multi-field coupled waves propagation.
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- 2024
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- Correction Notice
Dipolar Coupling at Interfaces of Ultrathin Semiconductors, Semimetals, Plasmonic Nanoparticles, and Molecules.
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- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 1, p. 1, doi. 10.1002/pssa.202300102
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- Article
Retracted: Performance Analysis and Development of a Semiconductor Junction Rectifier with Multicolor Coding for Indoor Farm Applications.
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- 2023
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- Correction Notice
Barrier Height, Ideality Factor and Role of Inhomogeneities at the AlGaN/GaN Interface in GaN Nanowire Wrap-Gate Transistor.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 24, p. 3159, doi. 10.3390/nano13243159
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- Article
Hole Injection Characteristics and Annealing Temperature Dependence for Organic Light‐Emitting Diodes Using Spontaneous Polarization.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 24, p. 1, doi. 10.1002/pssa.202300161
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- Article
Circularly Polarized Electroluminescence of InGaAs/GaAs/CoPt Spin Light Emitting Diodes Placed in a Strong and Weak Magnetic Field.
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- Technical Physics, 2023, v. 68, p. S418, doi. 10.1134/S1063784223900607
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- Article
Time-Resolved Structural Measurement of Thermal Resistance across a Buried Semiconductor Heterostructure Interface.
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- Materials (1996-1944), 2023, v. 16, n. 23, p. 7450, doi. 10.3390/ma16237450
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- Article
A Thin-Film Pinned-Photodiode Imager Pixel with Fully Monolithic Fabrication and beyond 1Me- Full Well Capacity.
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- Sensors (14248220), 2023, v. 23, n. 21, p. 8803, doi. 10.3390/s23218803
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- Article
The Effect of Alkyl Chain Length in Organic Semiconductor and Surface Polarity of Polymer Dielectrics in Organic Thin‐Film Transistors (OTFTs).
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- Small Methods, 2023, v. 7, n. 11, p. 1, doi. 10.1002/smtd.202300628
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- Article
The Effect of Alkyl Chain Length in Organic Semiconductor and Surface Polarity of Polymer Dielectrics in Organic Thin‐Film Transistors (OTFTs) (Small Methods 11/2023).
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- Small Methods, 2023, v. 7, n. 11, p. 1, doi. 10.1002/smtd.202370058
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- Article
Room-temperature high-speed electrical modulation of excitonic distribution in a monolayer semiconductor.
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- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-42568-w
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- Article
Large-Scale β -Ga 2 O 3 Trench MOS-Type Schottky Barrier Diodes with 1.02 Ideality Factor and 0.72 V Turn-On Voltage.
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- Electronics (2079-9292), 2023, v. 12, n. 20, p. 4315, doi. 10.3390/electronics12204315
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- Article
The importance of anchoring ligands of binuclear sensitizers on electron transfer processes and photovoltaic action in dye-sensitized solar cells.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-44015-8
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- Article
Influence of the Mn<sub>5</sub>Ge<sub>3</sub>/Ge ohmic-contact interface on the Seebeck coefficient of the Mn<sub>5</sub>Ge<sub>3</sub>/Ge bilayer.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-43843-y
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- Article
Analysis of the Impact of Interface Trap Charges on the Analog/RF Performance of a Graphene Nanoribbon Vertical Tunnel FET.
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- Journal of Electronic Materials, 2023, v. 52, n. 10, p. 6825, doi. 10.1007/s11664-023-10615-3
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- Article
基于 PINN 的变截面压电半导体纤维力学特性研究.
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- Piezoelectrics & Acoustooptics, 2023, v. 45, n. 5, p. 686, doi. 10.11977/j.issn.1004-2474.2023.05.007
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- Article
An anisotropic van der Waals dielectric for symmetry engineering in functionalized heterointerfaces.
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- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-41295-6
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- Article
Large and tunable magnetoresistance in van der Waals ferromagnet/semiconductor junctions.
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- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-41077-0
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- Article
Low-Cost Passivated Al Front Contacts for III-V/Ge Multijunction Solar Cells.
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- Energies (19961073), 2023, v. 16, n. 17, p. 6209, doi. 10.3390/en16176209
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- Article
Cu 2 O-Electrodeposited TiO 2 Photoelectrode for Integrated Solar Redox Flow Battery.
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- Processes, 2023, v. 11, n. 9, p. 2631, doi. 10.3390/pr11092631
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- Article
Obsoleszensrisiken verringern.
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- Elektronik Industrie, 2023, p. 84
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- Article
Controllable Switching between Highly Rectifying Schottky and p–n Junctions in an Ionic MoS<sub>2</sub> Device.
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- Advanced Functional Materials, 2023, v. 33, n. 30, p. 1, doi. 10.1002/adfm.202301010
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- Article
A Combined Theoretical and Experimental Approach to Deduce the Role of Dielectric Layer on Interface Trap Density in Single Crystal Organic Field‐Effect Transistors.
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- Crystal Research & Technology, 2023, v. 58, n. 7, p. 1, doi. 10.1002/crat.202200263
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- Article
Performance Analysis of a Steep-Slope Bi-channel GaSb-GaAs Extended Source Tunnel Field Effect Transistor With Enhanced Band to Band Tunneling Current.
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- Journal of Applied Research in Electrical Engineering, 2023, v. 2, n. 2, p. 206, doi. 10.22055/jaree.2024.44844.1082
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- Article
Ion‐Charged Dielectric Nanolayers for Enhanced Surface Passivation in High Efficiency Photovoltaic Devices.
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- Advanced Materials Interfaces, 2023, v. 10, n. 16, p. 1, doi. 10.1002/admi.202300037
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- Article
The electronic and magnetic properties of the bulk, Sc<sub>2</sub>MnSi surfaces, and Sc<sub>2</sub>MnSi/CdTe (111) interface.
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- Applied Physics A: Materials Science & Processing, 2023, v. 129, n. 6, p. 1, doi. 10.1007/s00339-023-06730-x
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- Article
Atomic Layer Deposition of Ultra-Thin Crystalline Electron Channels for Heterointerface Polarization at Two-Dimensional Metal-Semiconductor Heterojunctions.
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- Coatings (2079-6412), 2023, v. 13, n. 6, p. 1041, doi. 10.3390/coatings13061041
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- Article
Bimodal ionic photomemristor based on a high-temperature oxide superconductor/semiconductor junction.
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- Nature Communications, 2023, v. 14, n. 1, p. 1, doi. 10.1038/s41467-023-38608-0
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- Article
N‐Type Single Walled Carbon Nanotube Thin Film Transistors Using Green Tri‐Layer Polymer Dielectric.
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- Advanced Materials Interfaces, 2023, v. 10, n. 14, p. 1, doi. 10.1002/admi.202300079
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- Article
Pyro-Phototronic Effect for Advanced Photodetectors and Novel Light Energy Harvesting.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 8, p. 1336, doi. 10.3390/nano13081336
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- Article
Electronic and Optoelectronic Monolayer WSe 2 Devices via Transfer-Free Fabrication Method.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 8, p. 1368, doi. 10.3390/nano13081368
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- Article
Modelling and simulation of PN junction CdS/CdTe for betavoltaic cell.
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- Chalcogenide Letters, 2023, v. 20, n. 4, p. 243, doi. 10.15251/CL.2023.204.243
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- Article
Magnetic Field Effect in Hydrogen‐Bonded Semiconductor‐Based Organic Field‐Effect Transistors.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 7, p. 1, doi. 10.1002/pssa.202200821
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- Article
A Simulation of the Effect of External and Internal Parameters on the Synthesis of a Carbyne with More than 6000 Atoms for Emerging Continuously Tunable Energy Barriers in CNT-Based Transistors.
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- Nanomaterials (2079-4991), 2023, v. 13, n. 6, p. 1048, doi. 10.3390/nano13061048
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- Article