Works matching DE "SEMICONDUCTOR films"
Results: 704
The chemical process for materials deposition in aqueous solution: a review.
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- Surface Engineering, 2022, v. 38, n. 10-12, p. 907, doi. 10.1080/02670844.2023.2187883
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Structural, morphological, optical, and optoelectrical properties of SrZnO<sub>2</sub> thin films prepared by spray pyrolysis process.
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- Optical & Quantum Electronics, 2024, v. 56, n. 7, p. 1, doi. 10.1007/s11082-024-07167-z
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Role of the annealing temperature for optimizing the optical and electronic parameters of Ge10Se75Ag15 films for optoelectronic applications.
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- Optical & Quantum Electronics, 2021, v. 53, n. 5, p. 1, doi. 10.1007/s11082-021-02832-z
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Composition dependence of structural and optical properties of Ge<sub>x</sub>Se<sub>100−x</sub> semiconducting thin films.
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- Optical & Quantum Electronics, 2019, v. 51, n. 10, p. N.PAG, doi. 10.1007/s11082-019-2049-8
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Achieving near-unity absorption in planar semiconductor film on metal substrate.
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- Optical & Quantum Electronics, 2017, v. 49, n. 1, p. 1, doi. 10.1007/s11082-016-0801-x
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Design, implementation, and characterization of an automated SILAR system: validation with ZnO thin film deposition.
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- International Journal of Advanced Manufacturing Technology, 2022, v. 123, n. 3/4, p. 1189, doi. 10.1007/s00170-022-10207-1
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Plastic transistors in active-matrix displays.
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- Nature, 2001, v. 414, n. 6864, p. 599, doi. 10.1038/414599a
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Origin of high critical currents in YBa2Cu3O7-delta superconducting thin films.
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- Nature, 1999, v. 399, n. 6735, p. 439, doi. 10.1038/20880
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Exfoliation procedure-dependent optical properties of solution deposited MoS<sub>2</sub> films.
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- NPJ 2D Materials & Applications, 2023, v. 7, n. 1, p. 1, doi. 10.1038/s41699-023-00376-2
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Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity.
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- NPJ 2D Materials & Applications, 2022, v. 6, n. 1, p. 1, doi. 10.1038/s41699-021-00280-7
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Low-temperature contribution to the resonant tunneling conductance of a disordered N-I-N junction.
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- JETP Letters, 2016, v. 104, n. 7, p. 500, doi. 10.1134/S002136401619005X
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Dissipative solitons of the Bose-Einstein condensate of excitons.
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- JETP Letters, 2007, v. 85, n. 9, p. 426, doi. 10.1134/S0021364007090032
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Nonlinear Optical Diagnostics of the Crystal Structure of Semiconductor Films in Molecular Beam Epitaxy.
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- Journal of Communications Technology & Electronics, 2022, v. 67, n. 3, p. 324, doi. 10.1134/S106422692203007X
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Impact of surface topography and hydrophobicity in varied precursor concentrations of tenorite (CuO) films: a study of film properties and photocatalytic efficiency.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-58744-x
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纳米半导体场电子发射:真空纳电子学的基石与愿景.
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- Journal of Beijing University of Technology, 2020, v. 36, n. 10, p. 1081, doi. 10.11936/bjutxb2020030015
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Synthesis of P3HT base semiconducting hybrid films and their photocatalytic properties.
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- Journal of Coatings Technology & Research, 2019, v. 16, n. 4, p. 1065, doi. 10.1007/s11998-018-00181-3
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Evaluation of the Structure–Micromorphology Relationship of Co<sub>10%</sub>–Al<sub>x</sub> Co-doped Zinc Oxide Nanostructured Thin Films Deposited by Pulsed Laser Using XRD and AFM.
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- Arabian Journal for Science & Engineering (Springer Science & Business Media B.V. ), 2022, v. 47, n. 6, p. 7717, doi. 10.1007/s13369-022-06568-0
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Abnormal Grain Growth and Intergranular Amorphous Film Formation in BaTiO<sub>3</sub>.
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- Journal of the American Ceramic Society, 2007, v. 90, n. 2, p. 645, doi. 10.1111/j.1551-2916.2006.01436.x
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Morphology Analysis of Si Island Arrays on Si(001).
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1882, doi. 10.1007/s11671-010-9725-8
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Surface Chemistry Involved in Epitaxy of Graphene on 3C-SiC(111)/Si(111).
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1888, doi. 10.1007/s11671-010-9731-x
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Lateral Ordering of InAs Quantum Dots on Cross-hatch Patterned GaInP.
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- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1892, doi. 10.1007/s11671-010-9747-2
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Optoelectronics: Semiconductor tube laser rolls out.
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- Nature Photonics, 2015, v. 9, n. 3, p. 146, doi. 10.1038/nphoton.2015.25
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Quantum Conductivity in Single and Coupled Quantum-Dimensional Particles of Narrow-Gap Semiconductors.
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- Semiconductors, 2024, v. 58, n. 1, p. 20, doi. 10.1134/S1063782624010056
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Polaron Mass of Carriers in a Thin Film on Ionic Substrates.
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- Semiconductors, 2023, v. 57, n. 7, p. 339, doi. 10.1134/S1063782623090129
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Crystal Structure, Optical Properties, and Characteristics of the Band Gap of Ca<sub>2</sub>Si Semiconductor Films on an Al<sub>2</sub>O<sub>3</sub>(0001) Substrate.
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- Semiconductors, 2022, v. 56, n. 7-12, p. 382, doi. 10.1134/S1063782622090020
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Structure and Optical Properties of Chalcogenide Glassy As–Ge–Te Semiconductor.
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- Semiconductors, 2020, v. 54, n. 10, p. 1241, doi. 10.1134/S1063782620100140
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Dielectric Spectroscopy and Mechanism of the Semiconductor–Metal Phase Transition in Doped VO2:Ge and VO2:Mg Films.
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- Semiconductors, 2020, v. 54, n. 4, p. 403, doi. 10.1134/S1063782620040077
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On the Formation of Amorphous Ge Nanoclusters and Ge Nanocrystals in GeSixOy Films on Quartz Substrates by Furnace and Pulsed Laser Annealing.
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- Semiconductors, 2020, v. 54, n. 3, p. 322, doi. 10.1134/S1063782620030070
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Dielectric Spectroscopy and Features of the Mechanism of the Semiconductor–Metal Phase Transition in VO2 Films.
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- Semiconductors, 2020, v. 54, n. 2, p. 205, doi. 10.1134/S1063782620020116
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Parameters of ZnO Semiconductor Films Doped with Mn and Fe 3d Impurities.
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- Semiconductors, 2020, v. 54, n. 1, p. 15, doi. 10.1134/S1063782620010145
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Effect of the Samarium Impurity on the Local Structure of Se<sub>95</sub>Te<sub>5</sub> Chalcogenide Glassy Semiconductor and Current Passage through Al–Se<sub>95</sub>Te<sub>5</sub>〈Sm〉–Te Structures.
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- Semiconductors, 2019, v. 53, n. 12, p. 1637, doi. 10.1134/S1063782619160048
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Characteristics of Amorphous As<sub>2</sub>S<sub>3</sub> Semiconductor Films Obtained via Spin Coating.
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- Semiconductors, 2018, v. 52, n. 15, p. 1963, doi. 10.1134/S1063782618150058
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Software app development to determine optical constants in non-homogeneous semiconductor thin films.
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- Ingeniería y Competitividad, 2022, v. 24, n. 2, p. 1, doi. 10.25100/iyc.v24i2.11553
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Studies on optical and electrical properties of PVA capped nanocrystalline CdSe thin film prepared by chemical bath deposition method.
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- Chalcogenide Letters, 2022, v. 19, n. 12, p. 901, doi. 10.15251/CL.2022.1912.901
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Development of chitosan base PbBiS2 thin films for photovoltaic application.
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- Chalcogenide Letters, 2022, v. 19, n. 10, p. 725, doi. 10.15251/CL.2022.1910.725
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Novel POT/CdSe blend for optoelectronic applications.
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- Chalcogenide Letters, 2022, v. 19, n. 9, p. 621, doi. 10.15251/CL.2022.199.621
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Bandgap tuning of optical and electrical properties of zinc selenide.
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- Chalcogenide Letters, 2021, v. 18, n. 4, p. 183, doi. 10.15251/cl.2021.184.183
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EFFECT OF VACUUM ANNEALING ON THE PROPERTIES OF SPUTTERED SnS THIN FILMS.
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- Chalcogenide Letters, 2014, v. 11, n. 10, p. 485
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THICKNESS DEPENDENT PROPERTIES OF n-CdSe THIN FILMS FABRICATED BY ELECTRON BEAM EVAPORATION TECHNIQUE.
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- Chalcogenide Letters, 2013, v. 10, n. 7, p. 239
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INVESTIGATION OF Cu(In,Ga)Se2 FILMS FABRICATED BY ONE-STEP ELECTRODEPOSITION.
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- Chalcogenide Letters, 2013, v. 10, n. 7, p. 229
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CHARACTERIZATION OF Cu<sub>X</sub>S THIN FILMS OBTAINED BY CBD TECHNIQUE AT DIFFERENTS ANNEALING TEMPERATURES.
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- Chalcogenide Letters, 2012, v. 9, n. 2, p. 85
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ROOM TEMPERATURE FERROMAGNETIC BEHAVIOUR OF INDIUMDOPED SnO<sub>2</sub> DILUTE MAGNETIC SEMICONDUCTOR NANOCRYSTALLINE THIN FILMS.
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- Chalcogenide Letters, 2012, v. 9, n. 2, p. 73
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STRUCTURAL AND OPTICAL CHARACTERIZATION OF PVA CAPPED CADMIUM SULPHIDE NANOPARTICLES BY CHEMICAL COPRECIPITATION METHOD.
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- Chalcogenide Letters, 2012, v. 9, n. 2, p. 67
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EFFECT OF DEPOSITION PARAMETERS ON GROWTH AND CHARACTERIZATION OF CHEMICALLY DEPOSITED Cd<sub>1-X</sub>Pb<sub>X</sub>S THIN FILMS.
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- Chalcogenide Letters, 2011, v. 8, n. 2, p. 129
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Sol-gel coatings for electrical gas sensors.
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- Optica Applicata, 2005, v. 35, n. 4, p. 783
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Structural, optical, electrical and magnetic properties of sol-gel derived Zn<sub>1-x-y</sub>Co<sub>x</sub>Al<sub>y</sub>O films.
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- Materials Science (0137-1339), 2008, v. 26, n. 3, p. 659
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Al Modified Orthorhombic Molybdenum Trioxide as NO<sub>2</sub> Gas Sensor.
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- International Journal of Nanoscience, 2022, v. 21, n. 2, p. 1, doi. 10.1142/S0219581X22500119
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Studies on Lead Sulfide () Semiconducting Thin Films Deposited from Nanoparticles and Its NLO Application.
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- International Journal of Nanoscience, 2014, v. 13, n. 1, p. -1, doi. 10.1142/S0219581X1450001X
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MBE GROWTH AND STUDY OF Cr<sup>2+</sup>:ZnSe LAYERS FOR MID-IR LASERS.
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- International Journal of Nanoscience, 2007, v. 6, n. 5, p. 403, doi. 10.1142/S0219581X07004481
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STM/STS STUDIES OF THE INITIAL STAGE OF GROWTH OF ULTRA-THIN Bi FILMS ON 7 × 7-Si(111) SURFACE.
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- International Journal of Nanoscience, 2007, v. 6, n. 5, p. 399, doi. 10.1142/S0219581X0700481X
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