Works matching DE "SEMICONDUCTOR etching"

Results: 125

Electrochemical etching of p-n-GaN/AlGaN photoelectrodes.

Published in:

Technical Physics Letters, 2016, v. 42, n. 5, p. 482, doi. 10.1134/S1063785016050151

By:

Usikov, A.;
Helava, H.;
Nikiforov, A.;
Puzyk, M.;
Papchenko, B.;
Kovaleva, Yu.;
Makarov, Yu.

Publication type:

Article

Specific features of relief formation on silicon etched by a focused ion beam.

Published in:

Technical Physics Letters, 2010, v. 36, n. 11, p. 991, doi. 10.1134/S1063785010110064

By:

Gerasimenko, N.;
Chamov, A.;
Medetov, N.;
Khanin, V.

Publication type:

Article

Nonuniformity of the macropore etching front in thin n-Si wafers.

Published in:

Technical Physics Letters, 2007, v. 33, n. 8, p. 682, doi. 10.1134/S1063785007080172

By:

Nechitailov, A. A.;
Astrova, E. V.

Publication type:

Article

Synthesis and Structural Characterization of a Heterocomposition Based on Porous Layers of SiC Polytypes.

Published in:

Technical Physics Letters, 2004, v. 30, n. 11, p. 950, doi. 10.1134/1.1829352

By:

Sorokin, L. M.;
Mosina, G. N.;
Tregubova, A. S.;
Lebedev, A. A.;
Savkina, N. S.;
Shuman, V. B.

Publication type:

Article

Quasi-One-Dimensional Distribution of Macropores in Anodically Etched Uniaxially Stressed Silicon Plates.

Published in:

Technical Physics Letters, 2003, v. 29, n. 3, p. 226, doi. 10.1134/1.1565641

By:

Emel’yanov, V. I.;
Eremin, K. I.;
Starkov, V. V.;
Gavrilin, E. Yu.

Publication type:

Article

Formation of a Two-Sided Porous Structure during Electrochemical Silicon Etching by the Unno–Imai Method.

Published in:

Technical Physics Letters, 2000, v. 26, n. 1, p. 12, doi. 10.1134/1.1262723

By:

Zimin, S. P.;
Preobrazhenskiı, M. N.;
Zimin, D. S.

Publication type:

Article

Enhancement of the efficiency of i–n-GaN light-emitting diodes by electrochemical etching.

Published in:

Technical Physics Letters, 1999, v. 25, n. 1, p. 65, doi. 10.1134/1.1262358

By:

Sidorov, V. G.;
Drizhuk, A. G.;
Shagalov, M. D.;
Sidorov, D. V.;
Usikov, A. S.

Publication type:

Article

In situ examination of the chemical etching of SiO[sub 2]–Si structures using an atomic force microscope.

Published in:

Technical Physics Letters, 1998, v. 24, n. 11, p. 863, doi. 10.1134/1.1262294

By:

Bukharaev, A. A.;
Bukharaeva, A. A.;
Nurgazizov, N. I.;
Ovchinnikov, D. V.

Publication type:

Article

Nanostructured graded-index antireflection layer formation on GaN for enhancing light extraction from light-emitting diodes.

Published in:

Applied Physics B: Lasers & Optics, 2012, v. 107, n. 2, p. 393, doi. 10.1007/s00340-012-5017-6

By:

Dylewicz, R.;
Khokhar, A.;
Wasielewski, R.;
Mazur, P.;
Rahman, F.

Publication type:

Article

Fabrication of black multicrystalline silicon surface by nanosecond laser ablation.

Published in:

Applied Physics B: Lasers & Optics, 2011, v. 105, n. 3, p. 545, doi. 10.1007/s00340-011-4625-x

By:

Zuev, D.;
Novodvorsky, O.;
Khaydukov, E.;
Khramova, O.;
Lotin, A.;
Parshina, L.;
Rocheva, V.;
Panchenko, V.;
Dvorkin, V.;
Poroykov, A.;
Untila, G.;
Chebotareva, A.;
Kost, T.;
Timofeyev, M.

Publication type:

Article

Luminescent silicon nanoparticles with magnetic properties - production and investigation.

Published in:

Applied Physics B: Lasers & Optics, 2011, v. 105, n. 3, p. 599, doi. 10.1007/s00340-011-4676-z

By:

Kelm, E.;
Korovin, S.;
Pustovoy, V.;
Surkov, A.;
Vladimirov, A.

Publication type:

Article

Post-growth tailoring of quantum-dot saturable absorber mirrors by chemical etching.

Published in:

Applied Physics B: Lasers & Optics, 2009, v. 94, n. 3, p. 393, doi. 10.1007/s00340-008-3319-5

By:

Lumb, M.;
Farrell, D.;
Clarke, E.;
Damzen, M.;
Murray, R.

Publication type:

Article

FABRICATION OF NEARFIELD OPTICAL PROBE ARRAY USING VARIOUS NANOFABRICATION PROCEDURES.

Published in:

International Journal of Nanoscience, 2003, v. 2, n. 4/5, p. 283, doi. 10.1142/S0219581X03001309

By:

Choi, S.S.;
Jung, M.Y.;
Kim, J.W.;
Boo, J.H.;
Yang, J.S.

Publication type:

Article

Size Control of Porous Silicon Nanoparticles by Electrochemical Perforation Etching.

Published in:

Particle & Particle Systems Characterization, 2014, v. 31, n. 2, p. 252, doi. 10.1002/ppsc.201300244

By:

Qin, Zhengtao;
Joo, Jinmyoung;
Gu, Luo;
Sailor, Michael J.

Publication type:

Article

A multivariate parameter trace analysis for online fault detection in a semiconductor etch tool.

Published in:

International Journal of Production Research, 2012, v. 50, n. 23, p. 6639, doi. 10.1080/00207543.2011.611538

By:

Ko, JongMyoung;
Kim, ChangOuk

Publication type:

Article

Fabrication of resonator--quantum well infrared photodetector focal plane array by inductively coupled plasma etching.

Published in:

Optical Engineering, 2016, v. 55, n. 2, p. 1, doi. 10.1117/1.OE.55.2.026119

By:

Sun, Jason;
Kwong-Kit Choi

Publication type:

Article

Plasma Surface Modification of PMMA for Optical Applications.

Published in:

Journal of Adhesion Science & Technology, 2010, v. 24, n. 7, p. 1283, doi. 10.1163/016942409X12561252292026

By:

Schulz, U.;
Munzert, P.;
Kaiser, N.

Publication type:

Article

Micro Three-dimensional Removal Processing inside Sapphire substrate.

Published in:

Journal of Laser Micro / Nanoengineering, 2010, v. 5, n. 2, p. 179, doi. 10.2961/jlmn.2010.02.0015

By:

Tokumi, Kensuke;
Matsuo, Shigeki;
Kiyama, Satoshi;
Tomita, Takuro;
Hashimoto, Shuichi

Publication type:

Article

Three-Dimensional Simulation of DRIE Process Based on the Narrow Band Level Set and Monte Carlo Method.

Published in:

Micromachines, 2018, v. 9, n. 2, p. 74, doi. 10.3390/mi9020074

By:

Yu, Jia-Cheng;
Zhou, Zai-Fa;
Su, Jia-Le;
Xia, Chang-Feng;
Zhang, Xin-Wei;
Wu, Zong-Ze;
Huang, Qing-An

Publication type:

Article

Fabrication of Submicron Beams with Galvanic Etch Stop for Si in TMAH.

Published in:

Sensors (14248220), 2009, v. 9, n. 4, p. 2470, doi. 10.3390/s90402470

By:

Rong Lu;
Yanhong Wu;
Haitao Cheng;
Heng Yang;
Xinxin Li;
Yuelin Wang

Publication type:

Article

Photogalvanic Etching of n-GaN for Three-Dimensional Electronics.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 5, p. 3345, doi. 10.1007/s11664-019-06982-5

By:

Dryden, Daniel M.;
Nikolic, Rebecca J.;
Islam, M. Saif

Publication type:

Article

Microstructural Characterization of Defects and Chemical Etching for HgCdSe/ZnTe/Si (211) Heterostructures.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 1, p. 571, doi. 10.1007/s11664-018-6737-0

By:

Vaghayenegar, M.;
Doyle, K. J.;
Trivedi, S.;
Wijewarnasuriya, P.;
Smith, David J.

Publication type:

Article

The Effect of Wet Etching on Surface Properties of HgCdTe.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1781, doi. 10.1007/s11664-009-0844-x

By:

Sporken, R.;
Kiran, R.;
Casselman, T.;
Aqariden, F.;
Velicu, S.;
Chang, Yong;
Sivananthan, S.

Publication type:

Article

GaN MOS Capacitors and FETs on Plasma-Etched GaN Surfaces.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 523, doi. 10.1007/s11664-008-0617-y

By:

Tang, K.;
Huang, W.;
Chow, T. Paul

Publication type:

Article

Defect Analysis of Barrier Height Inhomogeneity in Titanium 4H-SiC Schottky Barrier Diodes.

Published in:

Journal of Electronic Materials, 2009, v. 38, n. 4, p. 574, doi. 10.1007/s11664-008-0647-5

By:

Bolen, M. L.;
Capano, M. A.

Publication type:

Article

Wet-Chemical Etching of (1120) ZnO Films.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 6, p. 556, doi. 10.1007/s11664-004-0046-5

By:

Zhu, J.;
Emanetoglu, N. W.;
Chen, Y.;
Yakshinskiy, B. V.;
Lu, Y.

Publication type:

Article

Etching of As- and P-Based III-V Semiconductors in a Planar Inductively Coupled BCl3/Ar Plasma.

Published in:

Journal of Electronic Materials, 2004, v. 33, n. 4, p. 358, doi. 10.1007/s11664-004-0143-5

By:

Lee, J. W.;
Lim, W. T.;
Baek, I. K.;
Yoo, S. R.;
Jeon, M. H.;
Cho, G. S.;
PEARTON, S. J.

Publication type:

Article

Sulfide passivation of a textured interface of a gallium arsenide surface-barrier photovoltaic cell.

Published in:

Technical Physics, 1999, v. 44, n. 6, p. 726, doi. 10.1134/1.1259454

By:

Dmitruk, N. L.;
Borkovskaya, O. Yu.;
Mamontova, I. B.

Publication type:

Article

Three-Dimensional Simulations of the Anisotropic Etching Profile Evolution for Producing Nanoscale Devices.

Published in:

Acta Physica Polonica: A, 2011, v. 119, n. 3, p. 447

By:

Radjenović, B.;
Radmilović-Radjenović, M.

Publication type:

Article

High Shear Speed Characteristics of Sub-100 μm Low Alpha SAC105 Solder Bump Directly Fabricated on Cu Filled Through Si Via for 3D Integration.

Published in:

Journal of Microelectronic & Electronic Packaging, 2015, v. 12, n. 3, p. 161, doi. 10.4071/imaps.416

By:

Do Hyun Jung;
Agarwal, Shalu;
Kumar, Santosh;
Jae Pil Jung

Publication type:

Article

Development and Characterization of Tapered Silicon Etch Process by Topography Modeling for TSV Application.

Published in:

Journal of Microelectronic & Electronic Packaging, 2010, v. 7, n. 1, p. 58, doi. 10.4071/1551-4897-7.1.58

By:

Ranganathan, N.;
Malar, A.;
Lee, D. Y.;
Prasad, K.;
Pey, K. L.

Publication type:

Article

Design and Fabrication of MEMS Micropumps using Double Sided Etching.

Published in:

Journal of Microelectronic & Electronic Packaging, 2010, v. 7, n. 1, p. 44, doi. 10.4071/1551-4897-7.1.44

By:

Yunas, Jumril;
Johari, Juliana;
Hamzah, A. A.;
Gebeshuber, Ille C.;
Majlis, Burhanuddin Yeop

Publication type:

Article

Monitoring and controlling possibilities in wet chemical etching processes for c-Si solar cell production.

Published in:

Photovoltaics International, 2011, n. 12, p. 103

By:

Rentsch, Jochen;
Birmann, Katrin;
Dannenberg, Tobias;
Nievendick, Jan;
Oltersdorf, Antje;
Zimmer, Martin

Publication type:

Article

OPTOELECTRONIC PROPERTIES OF ZnO NANOPARTICLES DEPOSITION ON POROUS SILICON.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2011, v. 25, n. 2, p. 277, doi. 10.1142/S0217979211054744

By:

KHASHAN, KHAWLA S.

Publication type:

Article

ICP Etching and Structure Study of PECVD SiC Films.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4318, doi. 10.1142/S0217979202015340

By:

Shi, J.;
Choi, W. K.;
Chor, E. F.

Publication type:

Article

Identify of the Micro-Defects in Semi-Insulating GaAs.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2002, v. 16, n. 28/29, p. 4484, doi. 10.1142/S0217979202015662

By:

Xu, Yuesheng;
Zhang, Chunling;
Tang, Lei;
Liu, Caichi;
Hao, Jingchen

Publication type:

Article

DEPENDENCIA DE LA RESPUESTA ÓPTICA CON EL DECAPADO QUÍMICO DE PELÍCULAS DE Ga1-xInxAsySb1-y.

Published in:

Revista Colombiana de Física, 2006, v. 38, n. 1, p. 69

By:

Tirado-Mejia, L.;
Osorio, J.;
Segura, J.;
Ortiz, C.;
Gutiérrez, N. J.;
De los Rios, M.;
Fonthal, G.;
Ariza-Calderón, H.

Publication type:

Article

Periodically Aligned Si Nanopillar Arrays as Efficient Antireflection Layers for Solar Cell Applications.

Published in:

Nanoscale Research Letters, 2010, v. 5, n. 11, p. 1721, doi. 10.1007/s11671-010-9701-3

By:

Li, Xiaocheng;
Li, Junshuai;
Chen, Ting;
Tay, Beng;
Wang, Jianxiong;
Yu, Hongyu

Publication type:

Article

Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes.

Published in:

Nanoscale Research Letters, 2010, v. 5, n. 3, p. 576, doi. 10.1007/s11671-009-9507-3

By:

Heyn, Ch.;
Stemmann, A.;
Köppen, T.;
Strelow, Ch.;
Kipp, T.;
Grave, M.;
Mendach, S.;
Hansen, W.

Publication type:

Article

Etch Defect Characterization and Reduction in Hard-Mask-Based Al Interconnect Etching.

Published in:

International Journal of Plasma Science & Engineering, 2008, p. 1, doi. 10.1155/2008/154035

By:

Hong-Ji Lee;
Che-Lun Hung;
Chia-Hao Leng;
Nan-Tzu Lian;
Ling-Wu Young;
Tahone Yang;
Kuang-Chao Chen;
Chih-Yuan Lu

Publication type:

Article

CIRCUIT MODELING OF SPURLINE AND ITS APPLICATIONS TO MICROSTRIP BANDSTOP FILTERS.

Published in:

Microwave Journal, 2007, v. 50, n. 11, p. 126

By:

Hal-Wen Liu;
Zhiguo Shi;
Knoechel, R. H.;
Schuenemann, K. F.

Publication type:

Article

Self-Sustained Cycle of Hydrolysis and Etching at Solution/Solid Interfaces: A General Strategy To Prepare Metal Oxide Micro-/Nanostructured Arrays for High-Performance Electrodes.

Published in:

Angewandte Chemie, 2015, v. 127, n. 13, p. 4004, doi. 10.1002/ange.201410807

By:

Zhang, Yingmeng;
Zhang, Weixin;
Yang, Zeheng;
Gu, Heyun;
Zhu, Qing;
Yang, Shihe;
Li, Mei

Publication type:

Article

Vapor Phase Metal-Assisted Chemical Etching of Silicon.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 24, p. 3827, doi. 10.1002/adfm.201304129

By:

Hildreth, Owen J.;
Schmidt, Daniel R.

Publication type:

Article

Nanostructurization of thin chalcogenide glassy semiconductor films during formation of relief-phase hologram structures.

Published in:

Optics & Spectroscopy, 2009, v. 106, n. 2, p. 288, doi. 10.1134/S0030400X09020222

By:

Koreshev, S. N.;
Ratushnyĭ, V. P.

Publication type:

Article

Fabrication of GaN-based ridge waveguides with very smooth and vertical sidewalls by combined plasma dry etching and wet chemical etching.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2015, v. 212, n. 10, p. 2341, doi. 10.1002/pssa.201532223

By:

Li, Wanyong;
Luo, Yi;
Xiong, Bing;
Sun, Changzheng;
Wang, Lai;
Wang, Jian;
Han, Yanjun;
Yan, Jianchang;
Wei, Tongbo;
Lu, Hongxi

Publication type:

Article

Single- and multi-scan femtosecond laser writing for selective chemical etching of cross section patternable glass micro-channels.

Published in:

Applied Physics A: Materials Science & Processing, 2012, v. 106, n. 1, p. 5, doi. 10.1007/s00339-011-6675-7

By:

Ho, Stephen;
Herman, Peter;
Aitchison, J.

Publication type:

Article

Enhancement of zinc interstitials in ZnO nanotubes grown on glass substrate by the hydrothermal method.

Published in:

Applied Physics A: Materials Science & Processing, 2012, v. 106, n. 1, p. 151, doi. 10.1007/s00339-011-6658-8

By:

Soomro, M.;
Hussain, I.;
Bano, N.;
Hussain, S.;
Nur, O.;
Willander, M.

Publication type:

Article

Selective wet etching of GeSbTe phase-change thin films in thermal lithography with tetramethylammonium.

Published in:

Applied Physics A: Materials Science & Processing, 2011, v. 104, n. 4, p. 1091, doi. 10.1007/s00339-011-6377-1

By:

Deng, Changmeng;
Geng, Yongyou;
Wu, Yiqun

Publication type:

Article

Flow pattern defects in germanium-doped Czochralski silicon crystals.

Published in:

Applied Physics A: Materials Science & Processing, 2011, v. 104, n. 1, p. 349, doi. 10.1007/s00339-010-6146-6

By:

Xu, Wubing;
Chen, Jiahe;
Ma, Xiangyang;
Yang, Deren;
Gong, Longfei;
Tian, Daxi

Publication type:

Article

Effect of surface roughness on thermal conductivity of VLS-grown rough SiGe nanowires.

Published in:

Applied Physics A: Materials Science & Processing, 2011, v. 104, n. 1, p. 23, doi. 10.1007/s00339-011-6475-0

By:

Kim, Hyoungjoon;
Park, Yong-Hee;
Kim, Ilsoo;
Kim, Jungwon;
Choi, Heon-Jin;
Kim, Woochul

Publication type:

Article