Works matching DE "SEMICONDUCTOR etching"

Results: 126

Implementation of extended temperature range etching.

Published in:

Solid State Technology, 2001, v. 44, n. 1, p. 76

By:

McKibben, James D.

Publication type:

Article

New capabilities with 3-D laser etching.

Published in:

Solid State Technology, 2001, v. 44, n. 1, p. 72

By:

Ehrlich, Daniel J.

Publication type:

Article

Etch and CVD process improvements via heated vacuum throttle valves.

Published in:

Solid State Technology, 2000, v. 43, n. 12, p. 80

By:

Goodman, Dan;
Pewsey, Shaun

Publication type:

Article

An integrated wet chemical etch-strip-clean sequence.

Published in:

Solid State Technology, 2000, v. 43, n. 10, p. 146

By:

Coze, Arnaud;
Philit, Gaelle

Publication type:

Article

A new concept for etch and deposition chamber pressure control.

Published in:

Solid State Technology, 2000, v. 43, n. 9, p. 149

By:

Caldwell, Kenneth

Publication type:

Article

An integrated etch approach as STI evolves for the 100nm regime.

Published in:

Solid State Technology, 2000, v. 43, n. 7, p. 157

By:

Lassig, Steve;
Xu, C. Shan;
Miller, Alan J.;
Kamath, Sanjay;
Romano, Andy;
Kudo, Takanori

Publication type:

Article

Thickness measurement of submonolayer native oxide films on silicon wafers.

Published in:

Solid State Technology, 2000, v. 43, n. 2, p. 87

By:

Li, Fuhe;
Balazs, Marjorie K.;
Deal, Bruce E.

Publication type:

Article

Curbing plasma-induced gate oxide damage.

Published in:

Solid State Technology, 1999, v. 42, n. 3, p. 49

By:

Gabriel, Calvin T.

Publication type:

Article

Eliminating backgrind defects with wet chemical etching.

Published in:

Solid State Technology, 1998, v. 41, n. 11, p. 85

By:

McHatton, Cheryl;
Gumbert, Cynthia M.

Publication type:

Article

Etching new IC materials for memory devices.

Published in:

Solid State Technology, 1998, v. 41, n. 8, p. 53

By:

DeOrnellas, Stephen P.;
Cofer, Alferd

Publication type:

Article

Maskmakers and lithographers need to `just do it.'

Published in:

Solid State Technology, 1998, v. 41, n. 8, p. 36

By:

Burggraaf, Pieter

Publication type:

Article

Wet-etch process improvements through SPC.

Published in:

Solid State Technology, 1998, v. 41, n. 7, p. 119

By:

Taylor, Donald S.

Publication type:

Article

Characterisation of lead free solderability of immersion Sn finish on PWBs using wetting balance technique.

Published in:

Surface Engineering, 2008, v. 24, n. 5, p. 337, doi. 10.1179/174329408X281821

By:

Hong, S. J.;
Park, B-H.;
Seo, D. S.;
Ryu, C.-R.

Publication type:

Article

Influence of bias and in situ cleaning on through cage (TC) or active screen plasma nitrided (ASPN) steels.

Published in:

Surface Engineering, 2006, v. 22, n. 4, p. 243, doi. 10.1179/174329406X122937

By:

Hubbard, P.;
Dowey, S. J.;
Doyle, E. D.;
McCulloch, D. G.

Publication type:

Article

Process limitations of magnetically enhanced reactive ion etch equipment.

Published in:

Surface Engineering, 2006, v. 22, n. 4, p. 263, doi. 10.1179/174329406X122928

By:

Kim, B.;
Park, J. Y.;
Hong, S. J.

Publication type:

Article

Self-Sustained Cycle of Hydrolysis and Etching at Solution/Solid Interfaces: A General Strategy To Prepare Metal Oxide Micro-/Nanostructured Arrays for High-Performance Electrodes.

Published in:

Angewandte Chemie, 2015, v. 127, n. 13, p. 4004, doi. 10.1002/ange.201410807

By:

Zhang, Yingmeng;
Zhang, Weixin;
Yang, Zeheng;
Gu, Heyun;
Zhu, Qing;
Yang, Shihe;
Li, Mei

Publication type:

Article

Low mechanical pressure during electrochemical etching: induced modification in optical and structural properties of n-type porous silicon.

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 12, p. 2173, doi. 10.1007/s10854-012-0738-1

By:

Naddaf, M.

Publication type:

Article

Etching behavior of CdTe and ZnxCd1− x Te single crystals in aqueous H2O2-HBr-lactic acid solutions.

Published in:

Inorganic Materials, 2006, v. 42, n. 8, p. 859, doi. 10.1134/S0020168506080103

By:

Tomashik, Z.;
Tomashik, V.;
Gnativ, I.;
Stratiichuk, I.

Publication type:

Article

Influence of Oxide Thinning by Selective Etching Process on Solution Processed Indium Zinc Oxide Thin Film Transistor.

Published in:

SID Symposium Digest of Technical Papers, 2016, v. 47, n. 1, p. 1165, doi. 10.1002/sdtp.10859

By:

Na, Jae Won;
Kim, Hee Jun;
Lee, Jin Hyeok;
Kim, Hyun Jae

Publication type:

Article

21.3: A Novel 5-Mask Etch-Stopper Pixel Structure with A Short Channel Oxide Semiconductor TFT.

Published in:

SID Symposium Digest of Technical Papers, 2015, v. 46, n. 1, p. 304, doi. 10.1002/sdtp.10477

By:

Yang, Joon‐Young;
Jung, Sung‐Hoon;
Woo, Chang‐Seung;
Lee, Ju‐Yun;
Jun, Myungchul;
Kang, In‐Byeong;
Park, Jung‐Ho

Publication type:

Article

Influence of plasma chemistry on oxygen triplets.

Published in:

European Physical Journal D (EPJ D), 2011, v. 64, n. 2/3, p. 437, doi. 10.1140/epjd/e2011-20213-2

By:

Milosavljević, V.;
Ellingboe, A.;
Daniels, S.

Publication type:

Article

Simulation of SiO2 etching in an inductively coupled CF4 plasma.

Published in:

Modern Physics Letters B, 2017, v. 31, n. 6, p. -1, doi. 10.1142/S0217984917500427

By:

Xu, Qing;
Li, Yu-Xing;
Li, Xiao-Ning;
Wang, Jia-Bin;
Yang, Fan;
Yang, Yi;
Ren, Tian-Ling

Publication type:

Article

DEPENDENCIA DE LA RESPUESTA ÓPTICA CON EL DECAPADO QUÍMICO DE PELÍCULAS DE Ga1-xInxAsySb1-y.

Published in:

Revista Colombiana de Física, 2006, v. 38, n. 1, p. 69

By:

Tirado-Mejia, L.;
Osorio, J.;
Segura, J.;
Ortiz, C.;
Gutiérrez, N. J.;
De los Rios, M.;
Fonthal, G.;
Ariza-Calderón, H.

Publication type:

Article

Nanostructurization of thin chalcogenide glassy semiconductor films during formation of relief-phase hologram structures.

Published in:

Optics & Spectroscopy, 2009, v. 106, n. 2, p. 288, doi. 10.1134/S0030400X09020222

By:

Koreshev, S. N.;
Ratushnyĭ, V. P.

Publication type:

Article

Submicrometer grating fabrication in fused silica by interferometric laser-induced backside wet etching technique.

Published in:

Applied Physics A: Materials Science & Processing, 2008, v. 93, n. 1, p. 69, doi. 10.1007/s00339-008-4636-6

By:

Vass, Csaba;
Osvay, Károly;
Véső, Tamás;
Hopp, Béla;
Bor, Zsolt

Publication type:

Article

Fabrication of integrated microchip for optical sensing by femtosecond laser direct writing of Foturan glass.

Published in:

Applied Physics A: Materials Science & Processing, 2008, v. 93, n. 1, p. 225, doi. 10.1007/s00339-008-4664-2

By:

Zhongke Wang;
Sugioka, Koji;
Midorikawa, Katsumi

Publication type:

Article

Laser etching of glass substrates by 1064 nm laser irradiation.

Published in:

Applied Physics A: Materials Science & Processing, 2008, v. 93, n. 1, p. 159, doi. 10.1007/s00339-008-4674-0

By:

Huang, Z.Q.;
Hong, M.H.;
Do, T.B.M.;
Lin, Q.Y.

Publication type:

Article

Laser Chemical Processing (LCP)—A versatile tool for microstructuring applications.

Published in:

Applied Physics A: Materials Science & Processing, 2008, v. 93, n. 1, p. 99, doi. 10.1007/s00339-008-4723-8

By:

Kray, D.;
Fell, A.;
Hopman, S.;
Mayer, K.;
Willeke, G.P.;
Glunz, S.W.

Publication type:

Article

Backside laser etching of fused silica using liquid gallium.

Published in:

Applied Physics A: Materials Science & Processing, 2006, v. 84, n. 4, p. 455, doi. 10.1007/s00339-006-3630-0

By:

Zimmer, K.;
Böhme, R.;
Ruthe, D.;
Rauschenbach, B.

Publication type:

Article

Etching temperature dependence of optical properties of the electrochemically etched n-GaAs.

Published in:

Applied Physics A: Materials Science & Processing, 2006, v. 84, n. 3, p. 317, doi. 10.1007/s00339-006-3621-1

By:

Zeng, A. S.;
Zheng, M. J.;
Ma, L.;
Shen, W. Z.

Publication type:

Article

Deep trench etching in macroporous silicon.

Published in:

Applied Physics A: Materials Science & Processing, 2006, v. 84, n. 3, p. 237, doi. 10.1007/s00339-006-3628-7

By:

Geppert, T.;
Schweizer, S. L.;
Gösele, U.;
Wehrspohn, R. B.

Publication type:

Article

Structural characterization of shock-affected sapphire.

Published in:

Applied Physics A: Materials Science & Processing, 2006, v. 86, n. 2, p. 197, doi. 10.1007/s00339-006-3732-8

By:

Mazilu, M.;
Juodkazis, S.;
Ebisui, T.;
Matsuo, S.;
Misawa, H.

Publication type:

Article

Laser-assisted etching of diamonds in air and in liquid media.

Published in:

Applied Physics A: Materials Science & Processing, 1997, v. 65, n. 1, p. 29, doi. 10.1007/s003390050536

By:

Shafeev, G.A.;
Obraztsova, E.D.;
Pimenov, S.M.

Publication type:

Article

Structural and photoluminescent properties of nanowires formed by the metal-assisted chemical etching of monocrystalline silicon with different doping level.

Published in:

Semiconductors, 2015, v. 49, n. 8, p. 1025, doi. 10.1134/S1063782615080084

By:

Georgobiani, V.;
Gonchar, K.;
Osminkina, L.;
Timoshenko, V.

Publication type:

Article

Optical properties of nanowire structures produced by the metal-assisted chemical etching of lightly doped silicon crystal wafers.

Published in:

Semiconductors, 2014, v. 48, n. 12, p. 1613, doi. 10.1134/S1063782614120082

By:

Gonchar, K.;
Osminkina, L.;
Sivakov, V.;
Lysenko, V.;
Timoshenko, V.

Publication type:

Article

Characterization of porous silicon carbide according to absorption and photoluminescence spectra.

Published in:

Semiconductors, 2014, v. 48, n. 8, p. 1028, doi. 10.1134/S1063782614080041

By:

Berezovska, N.;
Bacherikov, Yu.;
Konakova, R.;
Okhrimenko, O.;
Lytvyn, O.;
Linets, L.;
Svetlichnyi, A.

Publication type:

Article

Photoinduced etching of thin films of chalcogenide glassy semiconductors.

Published in:

Semiconductors, 2012, v. 46, n. 4, p. 504, doi. 10.1134/S1063782612040057

By:

Dan'ko, V.;
Indutnyi, I.;
Min'ko, V.;
Shepelyavyi, P.;
Bereznyova, O.;
Lytvyn, O.

Publication type:

Article

Structurization of submonolayer carbon coatings deposited in a low-pressure microwave plasma on single-crystal silicon.

Published in:

Semiconductors, 2011, v. 45, n. 11, p. 1483, doi. 10.1134/S1063782611110248

By:

Shanygin, V.;
Yafarov, R.

Publication type:

Article

Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures.

Published in:

Semiconductors, 2011, v. 45, n. 10, p. 1352, doi. 10.1134/S1063782611100216

By:

Tikhomirov, V.;
Maleev, N.;
Kuzmenkov, A.;
Solov'ev, Yu.;
Gladyshev, A.;
Kulagina, M.;
Zemlyakov, V.;
Dudinov, K.;
Yankevich, V.;
Bobyl, A.;
Ustinov, V.

Publication type:

Article

Treatment of the surface of blanks for fabrication of CdZnTe-based detectors.

Published in:

Semiconductors, 2011, v. 45, n. 8, p. 1094, doi. 10.1134/S1063782611080069

By:

Fedorenko, O.;
Dubina, N.;
Khristyan, V.;
Terzin, I.

Publication type:

Article

Influence of dislocations on the process of pore formation in n-InP (111) single crystals.

Published in:

Semiconductors, 2011, v. 45, n. 1, p. 121, doi. 10.1134/S1063782611010192

By:

Suchikova, Y.;
Kidalov, V.;
Sukach, G.

Publication type:

Article

Electrochemical etching of macropores in silicon with grooved etch seeds.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 746, doi. 10.1134/S1063782608060183

By:

Astrova, E. V.;
Nechitaĭlov, A. A.

Publication type:

Article

Effect of the arsenic cracking zone temperature on the efficiency of arsenic incorporation in CdHgTe films in molecular-beam epitaxy.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 651, doi. 10.1134/S1063782608060043

By:

Sidorov, G. Yu.;
Mikhaĭlov, N. N.;
Varavin, V. S.;
Ikusov, D. G.;
Sidorov, Yu. G.;
Dvoretskiĭ, S. A.

Publication type:

Article

Conduction type conversion in ion etching of Au- and Ag-doped narrow-gap HgCdTe single crystal.

Published in:

Semiconductors, 2007, v. 41, n. 7, p. 804, doi. 10.1134/S1063782607070068

By:

Bogoboyashchyy, V. V.;
Izhnin, I. I.;
Pociask, M.;
Mynbaev, K. D.;
Ivanov-Omskiĭ, V. I.

Publication type:

Article

Simulation of Hydrogen Penetration into p-Type Silicon under Wet Chemical Etching.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 282, doi. 10.1134/1.1461404

By:

Feklisova, O. V.;
Yakimov, E. B.;
Yarykin, N. A.

Publication type:

Article

Changes in Properties of a <PorousSilicon>/Silicon System during Gradual Etching off of the Porous Silicon Layer.

Published in:

Semiconductors, 2002, v. 36, n. 3, p. 330, doi. 10.1134/1.1461412

By:

Venger, E. F.;
Gorbach, T. Ya.;
Kirillova, S. I.;
Primachenko, V. E.;
Chernobaı, V. A.

Publication type:

Article

The Accuracy of Reconstructing the Semiconductor Doping Profile from Capacitance–Voltage Characteristics Measured during Electrochemical Etching.

Published in:

Semiconductors, 2001, v. 35, n. 7, p. 766, doi. 10.1134/1.1385710

By:

Karetnikova, I. R.;
Nefedov, I. M.;
Shashkin, V. I.

Publication type:

Article

Photosensitive structures based on porous silicon.

Published in:

Semiconductors, 1999, v. 33, n. 3, p. 327, doi. 10.1134/1.1187689

By:

Kaganovich, É. B.;
Manoılov, É. G.;
Svechnikov, S. V.

Publication type:

Article

Photogalvanic Etching of n-GaN for Three-Dimensional Electronics.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 5, p. 3345, doi. 10.1007/s11664-019-06982-5

By:

Dryden, Daniel M.;
Nikolic, Rebecca J.;
Islam, M. Saif

Publication type:

Article

Microstructural Characterization of Defects and Chemical Etching for HgCdSe/ZnTe/Si (211) Heterostructures.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 1, p. 571, doi. 10.1007/s11664-018-6737-0

By:

Vaghayenegar, M.;
Doyle, K. J.;
Trivedi, S.;
Wijewarnasuriya, P.;
Smith, David J.

Publication type:

Article