Influence of Dopant Incomplete Ionization on the Capacitance of a Reverse-Biased 4H-SiC p<sup>+</sup>−i−n<sup>+</sup> Diode.Published in:Technical Physics, 2018, v. 63, n. 6, p. 928, doi. 10.1134/S1063784218060130By:Ivanov, P. A.;Potapov, A. S.;Grekhov, I. V.Publication type:Article
Simple Approach to Generalization of Child-Langmuir Law for Non-Zero Injection Velocities in a Planar Diode.Published in:Contributions to Plasma Physics, 2017, v. 57, n. 1, p. 40, doi. 10.1002/ctpp.201600052By:Ahmady, H.;Mehrshahi, E.;Ghergherehchi, M.Publication type:Article
What Is a Diode?Published in:Elevator World, 2014, v. 62, n. 8, p. 99By:Herres, DavidPublication type:Article