Works about SEMICONDUCTOR diodes
Results: 745
Synthesis of Eco-Friendly Narrow-Band CuAlSe 2 /Ga 2 S 3 /ZnS Quantum Dots for Blue Quantum Dot Light-Emitting Diodes.
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- Coatings (2079-6412), 2025, v. 15, n. 2, p. 245, doi. 10.3390/coatings15020245
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- Article
Review of semiconductor laser diode technologies for sustainable energy in leather machining: Review of semiconductor laser diode technologies...: V. Swaminathan et al.
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- Clean Technologies & Environmental Policy, 2025, v. 27, n. 2, p. 577, doi. 10.1007/s10098-024-02976-y
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- Article
General Design Concepts for CAPodes as Ionologic Devices.
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- Angewandte Chemie, 2023, v. 135, n. 34, p. 1, doi. 10.1002/ange.202305397
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- Article
The nonlinear electrical behavior of ZnO-based varistor ceramics with CaSiO<sub>3</sub> addition.
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- Journal of Materials Science, 2014, v. 49, n. 2, p. 758, doi. 10.1007/s10853-013-7758-y
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- Article
Effect of the frequency and temperature on the complex impedance spectroscopy ( C- V and G- V) of p-ZnGaSe/n-Si nanostructure heterojunction diode.
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- Journal of Materials Science, 2012, v. 47, n. 4, p. 1719, doi. 10.1007/s10853-011-5951-4
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- Article
High voltage characterization of tin oxide varistors.
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- Journal of Materials Science, 2007, v. 42, n. 24, p. 10284, doi. 10.1007/s10853-006-1089-1
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- Article
Microstructure and electrical properties of ZnO-based varistors prepared by high-energy ball milling.
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- Journal of Materials Science, 2007, v. 42, n. 8, p. 2637, doi. 10.1007/s10853-006-1350-7
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- Article
Synthesis and light-emitting properties of poly[9-(4′-tert-butyl-phenylenemethene)-fluoroene-co-9,9-dioctylfluorene].
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- Journal of Materials Science, 2007, v. 42, n. 4, p. 1325, doi. 10.1007/s10853-006-1193-2
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- Article
Importance of oxygen atmosphere to recover the ZnO-based varistors properties.
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- Journal of Materials Science, 2006, v. 41, n. 19, p. 6221, doi. 10.1007/s10853-006-0589-3
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- Article
A simple approach to oxide varistor materials.
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- 2006
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- Letter
Microstructure and nonlinear electrical properties of ZnO-Pr<sub>6</sub>O<sub>11</sub>-CoO-Cr<sub>2</sub>O<sub>3</sub>-La<sub>2</sub>O<sub>3</sub>-based varistors.
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- Journal of Materials Science, 2005, v. 40, n. 23, p. 6307, doi. 10.1007/s10853-005-4567-y
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- Article
The failure analyses on ZnO varistors used in high tension devices.
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- Journal of Materials Science, 2005, v. 40, n. 21, p. 5591, doi. 10.1007/s10853-005-1366-4
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- Article
Synthesis, photo- and electroluminescence properties of a PPV derivative with di(ethylene oxide) segment in the backone.
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- Journal of Materials Science, 2005, v. 40, n. 13, p. 3569, doi. 10.1007/s10853-005-2889-4
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- Article
Modification of radiation hardness of siliconp-njunction photodiodes by hydrogen plasma treatment.
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- Journal of Materials Science, 2005, v. 40, n. 6, p. 1399, doi. 10.1007/s10853-005-0573-3
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- Article
Dependence of the properties of CoO-doped ZnO-Bi<sub>2</sub>O<sub>3</sub> varistors on heating and cooling rates during ceramic processing.
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- Journal of Materials Science, 2004, v. 39, n. 24, p. 7379, doi. 10.1023/B:JMSC.0000048755.88512.9d
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- Article
New ZnSnO<sub>3</sub>-based varistor system.
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- Journal of Materials Science, 2004, v. 39, n. 10, p. 3537, doi. 10.1023/B:JMSC.0000026971.47213.2a
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- Article
MODIFICATION OF VAN DER ZIEL RELATION FOR SPECTRUM OF NOISE IN p-n JUNCTION.
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- Fluctuation & Noise Letters, 2012, v. 11, n. 2, p. 1250015-1, doi. 10.1142/S0219477512500150
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- Article
LOW-FREQUENCY NOISE TO CHARACTERIZE RESISTIVE SWITCHING OF METAL OXIDE ON POLYMER MEMORIES.
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- Fluctuation & Noise Letters, 2011, v. 10, n. 4, p. 497, doi. 10.1142/S0219477511000739
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- Article
MEASUREMENT OF FLICKER NOISE AS A DIAGNOSTIC TOOL FOR HOT-ELECTRON DEGRADATION IN GaN-BASED LEDS.
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- Fluctuation & Noise Letters, 2007, v. 7, n. 4, p. L419, doi. 10.1142/S0219477507004045
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- Article
THE DIFFERENT PHYSICAL ORIGINS OF 1/f NOISE AND SUPERIMPOSED RTS NOISE IN LIGHT-EMITTING QUANTUM DOT DIODES.
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- Fluctuation & Noise Letters, 2003, v. 3, n. 3, p. L325, doi. 10.1142/S0219477503001403
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- Article
Bilaterally Sensitive Photodiode Structures in the System Gallium Arsenide–Cadmium Sulfide.
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- Journal of Engineering Physics & Thermophysics, 2003, v. 76, n. 1, p. 197, doi. 10.1023/A:1022956400985
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- Article
Modelling and performance evaluation of diode‐assisted impedance source networks.
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- IET Power Electronics (Wiley-Blackwell), 2021, v. 14, n. 15, p. 2519, doi. 10.1049/pel2.12201
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- Article
An interleaved high step‐up DC–DC converter with ZVS capability for renewable energy systems applications.
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- IET Power Electronics (Wiley-Blackwell), 2021, v. 14, n. 15, p. 2478, doi. 10.1049/pel2.12195
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- Article
Seven-level boosting active neutral point clamped inverter using cross-connected switched capacitor cells.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 9, p. 1919, doi. 10.1049/iet-pel.2020.0107
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- Article
SIMSCAPE electro-thermal modelling of the PIN diode for power circuits simulation.
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- IET Power Electronics (Wiley-Blackwell), 2016, v. 9, n. 7, p. 1521, doi. 10.1049/iet-pel.2015.0340
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- Article
Analysis of voltage and current stresses of a generalised step-up DC-DC converter.
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- IET Power Electronics (Wiley-Blackwell), 2014, v. 7, n. 6, p. 1347, doi. 10.1049/iet-pel.2013.0496
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- Article
Fast and reliable calculation of the two-diode model without simplifications.
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- Progress in Photovoltaics, 2014, v. 22, n. 4, p. 494, doi. 10.1002/pip.2301
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- Article
Energy characteristics for nanosecond current interrupter of semiconductor-magnetic pulse generator’s terminal stage.
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- Electrical Engineering & Electromechanics, 2023, n. 3, p. 59, doi. 10.20998/2074-272X.2023.3.09
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- Article
The comparison of the methods used for determining of Schottky diode parameters in a wide temperature range.
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- Sakarya University Journal of Science (SAUJS) / Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2017, v. 21, n. 6, p. 1286, doi. 10.16984/saufenbilder.279996
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- Article
The Wall Temperature Measurement and Effects on the Missile Complex Surfaсe Based on the Semiconductor Diode and Electronic System.
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- Journal of Nano- & Electronic Physics, 2019, v. 11, n. 3, p. 1, doi. 10.21272/jnep.11(3).03004
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- Article
p-i-n Photodiode Based on Silicon with Short Rise Time.
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- Journal of Nano- & Electronic Physics, 2018, v. 10, n. 4, p. 1, doi. 10.21272/jnep.10(4).04019
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- Article
Gunn Diodes Based on Graded InGaP-InPAs.
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- Journal of Nano- & Electronic Physics, 2018, v. 10, n. 4, p. 1, doi. 10.21272/jnep.10(4).04014
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- Article
Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation.
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- Walailak Journal of Science & Technology, 2018, v. 15, n. 11, p. 803, doi. 10.48048/wjst.2018.5968
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- Article
All-electronic line width reduction in a semiconductor diode laser using a crystalline microresonator.
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- Applied Physics B: Lasers & Optics, 2015, v. 120, n. 1, p. 155, doi. 10.1007/s00340-015-6118-9
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- Article
Spectroscopy and laser cooling on the $${}^{1}S_{0}$$ - $$\,^{3}P_{1}$$ line in Yb via an injection-locked diode laser at 1,111.6 nm.
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- Applied Physics B: Lasers & Optics, 2015, v. 118, n. 4, p. 517, doi. 10.1007/s00340-015-6018-z
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- Article
Idler-resonant optical parametric oscillator based on KTiOAsO.
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- Applied Physics B: Lasers & Optics, 2013, v. 112, n. 1, p. 83, doi. 10.1007/s00340-013-5401-x
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- Article
PCF based high power narrow line width pulsed fiber laser.
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- Applied Physics B: Lasers & Optics, 2012, v. 108, n. 3, p. 635, doi. 10.1007/s00340-012-5020-y
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- Publication type:
- Article
Nd:GdVO self-Raman laser using double-end polarised pumping at 880 nm for high power infrared and visible output.
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- Applied Physics B: Lasers & Optics, 2012, v. 108, n. 1, p. 17, doi. 10.1007/s00340-012-5093-7
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- Article
Output properties of diode-pumped passively Q-switched 1.06 μm Nd:GdVO laser using a [100]-cut Cr:YAG crystal.
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- Applied Physics B: Lasers & Optics, 2012, v. 107, n. 2, p. 339, doi. 10.1007/s00340-012-4973-1
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- Publication type:
- Article
Diode-pumped passively Q-switched Nd:YAG/SrWO intracavity Raman laser with high pulse energy and average output power.
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- Applied Physics B: Lasers & Optics, 2012, v. 107, n. 2, p. 343, doi. 10.1007/s00340-012-4992-y
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- Article
Mode-hop-free tuning over 135 GHz of external cavity diode lasers without antireflection coating.
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- Applied Physics B: Lasers & Optics, 2012, v. 106, n. 3, p. 629, doi. 10.1007/s00340-011-4841-4
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- Publication type:
- Article
Versatile spectrally shapeable multi-mode terahertz system.
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- Applied Physics B: Lasers & Optics, 2012, v. 106, n. 1, p. 81, doi. 10.1007/s00340-011-4774-y
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- Article
High-power VCSELs with a rectangular aperture.
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- Applied Physics B: Lasers & Optics, 2011, v. 105, n. 4, p. 783, doi. 10.1007/s00340-011-4593-1
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- Article
Tri-wavelength laser with Nd:CLTGG crystal.
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- Applied Physics B: Lasers & Optics, 2011, v. 105, n. 4, p. 807, doi. 10.1007/s00340-011-4577-1
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- Article
A high-energy, chirped laser system for optical Stark deceleration.
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- Applied Physics B: Lasers & Optics, 2011, v. 104, n. 3, p. 569, doi. 10.1007/s00340-011-4599-8
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- Article
Optimized loading of an optical dipole trap for the production of chromium BECs.
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- Applied Physics B: Lasers & Optics, 2011, v. 102, n. 1, p. 1, doi. 10.1007/s00340-010-4171-y
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- Article
A sensitive method for measurements of complex third-order susceptibilities in waveguides.
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- Applied Physics B: Lasers & Optics, 2010, v. 98, n. 4, p. 653, doi. 10.1007/s00340-009-3837-9
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- Article
Concentration quenching of Eu<sup>2+</sup> in a novel blue–green emitting phosphor: Ba<sub>2</sub>ZnSi<sub>2</sub>O<sub>7</sub>:Eu<sup>2+</sup>.
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- Applied Physics B: Lasers & Optics, 2009, v. 96, n. 1, p. 39, doi. 10.1007/s00340-009-3450-y
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- Article
First investigations on an Er<sup>3+</sup>:YAG SSHCL.
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- Applied Physics B: Lasers & Optics, 2008, v. 93, n. 4, p. 817, doi. 10.1007/s00340-008-3244-7
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- Article
Thermally stable luminescence of blue LiSrPO<sub>4</sub>:Eu<sup>2+</sup> phosphor for near-UV light-emitting diodes.
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- Applied Physics B: Lasers & Optics, 2008, v. 93, n. 2/3, p. 583, doi. 10.1007/s00340-008-3169-1
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- Article