Works matching DE "SEMICONDUCTOR diodes"

Results: 795

Solution Processed Organic Double Light-Emitting Layer Diode Based on Cross-Linkable Small Molecular Systems.

Published in:

Angewandte Chemie, 2013, v. 125, n. 36, p. 9742, doi. 10.1002/ange.201303031

By:

Liaptsis, Georgios;
Hertel, Dirk;
Meerholz, Klaus

Publication type:

Article

A brief study on structural, optical, and photovoltaic properties of lithium sulfate monohydrate single crystals.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 14, p. 11855, doi. 10.1007/s10854-020-03739-3

By:

Naik, Mudasar M.;
Mir, Feroz A.;
Ullah, Faheem;
Ahmad, Peerzada A.;
Ghayas, Baseerat

Publication type:

Article

Interface controlling study of silicon based Schottky diode by organic layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 21, p. 19239, doi. 10.1007/s10854-019-02282-0

By:

Gencer Imer, Arife;
Korkut, A.;
Farooq, W. A.;
Dere, A.;
Atif, M.;
Hanif, Atif;
Karabulut, Abdulkerim

Publication type:

Article

The synthesis of 4,4′-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 11, p. 10408, doi. 10.1007/s10854-019-01382-1

By:

Yıldırım, M.;
Erdoğan, A.;
Yüksel, Ö. F.;
Kuş, M.;
Can, M.;
Akın, Ü.;
Tuğluoğlu, N.

Publication type:

Article

Luminescence of long-persistent Ca2MgSi2O7−1.5xNx:Eu2+,Dy3+ phosphors for LEDs applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 4, p. 4056, doi. 10.1007/s10854-019-00692-8

By:

Zhang, Jia;
Chen, Wenbo;
Chen, Guibin

Publication type:

Article

Reduction of leakage current at the SiNx/GaN interface in GaN Schottky diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 22, p. 19353, doi. 10.1007/s10854-018-0064-3

By:

Kolli, Sowmya;
Sunkara, Mahendra;
Alphenaar, Bruce

Publication type:

Article

A Comparison of Pt/Si and Pt3Cu/Si Schottky nano-heterojunctions: enhanced direct methanol energy converter based on non-adiabatic system and molecular adsorption.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 19, p. 16486, doi. 10.1007/s10854-018-9742-4

By:

Chen, Xiang;
Wu, Zhenhua;
Fu, Xuecheng;
Mu, Erzhen;
Wu, Zhimao;
Hu, Zhiyu

Publication type:

Article

Frequency dependent C-V and G/ω-V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 6, p. 4951, doi. 10.1007/s10854-016-6147-0

By:

Tan, S.;
Tecimer, H.;
Çiçek, O.;
Altındal, Ş

Publication type:

Article

Effect of MgO doping on electrical characteristics of ZnO-0.5 mol% VO-2 mol% MnO varistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 11, p. 11659, doi. 10.1007/s10854-016-5301-z

By:

Viswanath, Noolu;
Pandey, Shreevats;
Kumar, Devendra

Publication type:

Article

Tunable perfect metamaterial absorber and sensor applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 11, p. 12091, doi. 10.1007/s10854-016-5359-7

By:

Bakır, M.;
Karaaslan, M.;
Dincer, F.;
Delihacioglu, K.;
Sabah, C.

Publication type:

Article

Preparation of doped ZnO nanopowders by refluxing method and applications in high voltage varistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 11, p. 9081, doi. 10.1007/s10854-015-3594-y

By:

Zhao, Zhong-Yin;
Wang, Mao-Hua;
Zhang, Han-Ping

Publication type:

Article

Electrical characterization of a pre-ceramic polymer modified Ag/poly(hydridocarbyne)/ p-Si Schottky barrier diode.

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 12, p. 2282, doi. 10.1007/s10854-012-0819-1

By:

Başman, Necati;
Uzun, Orhan;
Fiat, Songül;
Alkan, Cemil;
Çankaya, Güven

Publication type:

Article

Effect of aluminum doping on electrical and dielectric aging behavior against current impulse of ZPCCY-based varistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 1, p. 77, doi. 10.1007/s10854-010-0088-9

By:

Choon-Woo Nahm

Publication type:

Article

Influence of Nb addition on microstructure, electrical, dielectric properties, and aging behavior of MnCoDy modified Zn–V-based varistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 6, p. 540, doi. 10.1007/s10854-009-9954-8

By:

Choon-Woo Nahm

Publication type:

Article

High voltage SnO2 varistors prepared from nanocrystalline powders.

Published in:

Journal of Materials Science: Materials in Electronics, 2010, v. 21, n. 2, p. 199, doi. 10.1007/s10854-009-9893-4

By:

Shahraki, Mohammad Maleki;
Shojaee, Seyyed Ali;
Nemati, Ali;
Sani, Mohammad Ali Faghihi

Publication type:

Article

Al doping effect on microstructure, electrical properties, dielectric characteristics, and aging behaviors of ZPCCY-based varistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 8, p. 718, doi. 10.1007/s10854-008-9793-z

By:

Nahm, Choon-W.

Publication type:

Article

Temperature-dependent current–voltage and capacitance–voltage characteristics of the Ag/ n-InP/In Schottky diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 2, p. 105, doi. 10.1007/s10854-008-9635-z

By:

Cimilli, F. E.;
Efeoğlu, H.;
Sağlam, M.;
Türüt, A.

Publication type:

Article

Fabrication of a ZnTe light emitting diode by Al thermal diffusion into a p-ZnTe epitaxial layer on a p-ZnMgTe substrate.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 505, doi. 10.1007/s10854-008-9691-4

By:

Tanaka, Tooru;
Saito, Katsuhiko;
Nishio, Mitsuhiro;
Qixin Guo;
Ogawa, Hiroshi

Publication type:

Article

The influence of area/volume ratio on microstructure and non-Ohmic properties of SnO2-based varistor ceramic blocks.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 1, p. 49, doi. 10.1007/s10854-008-9602-8

By:

Ramírez, M. A.;
Fernández, J. F.;
De la Rubia, M.;
de Frutos, J.;
Bueno, P. R.;
Longo, E.;
Varela, J. A.

Publication type:

Article

New method to control defect reaction induced by electron-hole recombination for long-living widegap light-emitting devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 299, doi. 10.1007/s10854-007-9555-3

By:

Adachi, Masahiro;
Hashimoto, Yutaka;
Kanzaki, Katsuhisa;
Ohashi, Shuji;
Morita, Yasuhiro;
Abe, Tomoki;
Kasada, Hirofumi;
Ando, Koshi;
Tajima, Michio

Publication type:

Article

Investigation of defects in polyhedral oligomeric silsesquioxanes based organic light emitting diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 87, doi. 10.1007/s10854-008-9629-x

By:

Renaud, Cédric;
Josse, Yves;
Chih-Wen Lee;
Nguyen, Thien-Phap

Publication type:

Article

Influence of doping on the reliability of AlGaInP LEDs.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 338, doi. 10.1007/s10854-008-9575-7

By:

Altieri-Weimar, Paola;
Jaeger, Arndt;
Lutz, Thomas;
Stauss, Peter;
Streubel, Klaus;
Thonke, Klaus;
Sauer, Rolf

Publication type:

Article

Defect investigation and temperature analysis of high-power AlGaInP laser diodes during catastrophic optical damage.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 155, doi. 10.1007/s10854-007-9478-z

By:

Bou Sanayeh, Marwan;
Brick, Peter;
Schmid, Wolfgang;
Mayer, Bernd;
Müller, Martin;
Reufer, Martin;
Streubel, Klaus;
Schwirzke-Schaaf, Sandy;
Tomm, Jens W.;
Danilewsky, Andreas;
Bacher, Gerd

Publication type:

Article

Synthesis and luminescent properties of Sr4Al14O25:Eu2+ blue–green emitting phosphor for white light-emitting diodes (LEDs).

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 339, doi. 10.1007/s10854-007-9325-2

By:

Zhanchao Wu;
Jianxin Shi;
Jing Wang;
Menglian Gong;
Qiang Su

Publication type:

Article

Impact of temperature and frequency dependence of electrical properties of Al doped ZnO nanoparticles.

Published in:

Materials Research Innovations, 2024, v. 28, n. 6, p. 459, doi. 10.1080/14328917.2024.2322787

By:

Savitha, D.;
Latha, H.K.E;
Lalithamba, H.S.;
Jeppu, Yogananda Vasudev

Publication type:

Article

MODIFICATION OF VAN DER ZIEL RELATION FOR SPECTRUM OF NOISE IN p-n JUNCTION.

Published in:

Fluctuation & Noise Letters, 2012, v. 11, n. 2, p. 1250015-1, doi. 10.1142/S0219477512500150

By:

KLYUEV, ALEXEY V.;
SHMELEV, EVGENY I.;
YAKIMOV, ARKADY V.;
Mercha, Abdelkarim

Publication type:

Article

LOW-FREQUENCY NOISE TO CHARACTERIZE RESISTIVE SWITCHING OF METAL OXIDE ON POLYMER MEMORIES.

Published in:

Fluctuation & Noise Letters, 2011, v. 10, n. 4, p. 497, doi. 10.1142/S0219477511000739

By:

VANDAMME, L. K. J.;
CÖLLE, M.;
DE LEEUW, D. M.;
VERBAKEL, F.;
Kish, L. B.

Publication type:

Article

MEASUREMENT OF FLICKER NOISE AS A DIAGNOSTIC TOOL FOR HOT-ELECTRON DEGRADATION IN GaN-BASED LEDS.

Published in:

Fluctuation & Noise Letters, 2007, v. 7, n. 4, p. L419, doi. 10.1142/S0219477507004045

By:

Fong, W. K.;
Leung, K. K.;
Lui, H. F.;
Wai, P. K. A.;
Surya, C.;
Chen, Z.;
Cao, C. B.

Publication type:

Article

Física dos materiais semicondutores no ensino médio: possibilidades e desafios.

Published in:

Diversitas Journal, 2023, v. 8, n. 2, p. 1125, doi. 10.48017/dj.v8i22529

By:

Saldanha de SIQUEIRA, Kleber

Publication type:

Article

Field-free Josephson diode effect in NbSe2 van der Waals junction.

Published in:

Communications Physics, 2025, v. 8, n. 1, p. 1, doi. 10.1038/s42005-025-02054-9

By:

Ma, Jiaxiang;
Wang, Huiyu;
Zhuo, Weizhuang;
Lei, Bin;
Wang, Shuai;
Wang, Wenxiang;
Chen, Xin-Yu;
Wang, Zhen-Yu;
Ge, Binghui;
Wang, Zhen;
Tao, Jing;
Jiang, Kun;
Xiang, Ziji;
Chen, Xian-Hui

Publication type:

Article

A Single Junction Barrier Model for Varistors.

Published in:

Turkish Journal of Physics, 2007, v. 31, n. 4, p. 211

By:

Tioursi, Mustapaha;
Chaouch, Abdallah

Publication type:

Article

Exact Analytical Solution of the Diode Ideality Factor of a pn Junction Device Using Lambert W-function Model.

Published in:

Turkish Journal of Physics, 2007, v. 31, n. 1, p. 7

By:

Bayhan, Habibe;
Kavasoglu, Sertap

Publication type:

Article

TUNABLE MICROSTRIP FILTERS USING SELECTIVELY ETCHED FERROELECTRIC THIN-FILM VARACTORS FOR COUPLING.

Published in:

Integrated Ferroelectrics, 2009, v. 112, n. 1, p. 8, doi. 10.1080/10584587.2009.484662

By:

miranda, Felix A.;
Mueller, Carl H.;
Van Keuls, Frederick W.;
Romanofsky, Robert R.;
Subramanyam, Guru

Publication type:

Article

DESIGN AND SIMULATION OF TUNABLE KA BAND FILTERS WITH GRADED BARIUM STRONTIUM TITANATE (BST) VARACTORS.

Published in:

Integrated Ferroelectrics, 2009, v. 111, n. 1, p. 50, doi. 10.1080/10584581003590926

By:

KALKUR, T. S.;
SBROCKEY, N. M.;
TOMPA, G. S.;
ALPAY, S. P.

Publication type:

Article

A LOW VOLTAGE TUNABLE ANALOG PHASE SHIFTER UTILIZING FERROELECTRIC VARACTORS.

Published in:

Integrated Ferroelectrics, 2008, v. 100, n. 1, p. 156, doi. 10.1080/10584580802540967

By:

Subramanyam, Guru;
Leedy, Kevin;
Varanasi, Chakrapani;
Neidhard, Robert;
Stamper, Keith;
Calcatera, Mark

Publication type:

Article

CHARACTERIZATION OF METAL-FERROELECTRIC-SEMICONDUCTOR STRUCTURE USING FERROELECTRIC POLYMER POLYVINYLIDENE FLUORIDE-TRIFLUOROETHYLENE (PVDF-TrFE) (51/49).

Published in:

Integrated Ferroelectrics, 2008, v. 98, n. 1, p. 121, doi. 10.1080/10584580802092548

By:

Dong-Won Kim;
Jeong-Hwan Kim;
Joo-Nam Kim;
Hyung-Jin Park;
Ho-Seung Jeon;
Byung-Eun Park

Publication type:

Article

FABRICATION AND CHARACTERIZATION OF MFIS-FET USING Bi3.25La0.75Ti3O12/ZrO2/Si STRUCTURE.

Published in:

Integrated Ferroelectrics, 2006, v. 84, n. 1, p. 203, doi. 10.1080/10584580601086824

By:

SONG, YOUNG-UK;
PARK, JUN-SEO;
YOON, JOO-WON;
LEE, GWANG-GEUN;
PARK, BYUNG-EUN;
KIM, CHUL-JU;
CHOI, YUN-SOO;
KOH, JUNE-HWAN

Publication type:

Article

VOLTAGE-CONTROLLED OSCILLATOR DESIGN USING FERROELECTRIC VARACTORS.

Published in:

Integrated Ferroelectrics, 2006, v. 81, n. 1, p. 157, doi. 10.1080/10584580600660348

By:

Jamil, Asad;
Kalkur, T.;
Cramer, N.

Publication type:

Article

ELECTRICAL CHARACTERIZATIONS OF Bi 3.25 La 0.75 Ti 3 O 12 THIN FILMS ON THERMALLY OXIDIZED p -Si SUBSTRATES.

Published in:

Integrated Ferroelectrics, 2006, v. 79, n. 1, p. 163, doi. 10.1080/10584580600659415

By:

Jaemoon Pak;
Eunjung Ko;
Jongjo Baek;
Kuangwoo Nam;
Gwangseo Park

Publication type:

Article

Modelling of an Esaki Tunnel Diode in a Circuit Simulator.

Published in:

Active & Passive Electronic Components, 2011, p. 1, doi. 10.1155/2011/830182

By:

Kriplani, Nikhil M.;
Bowyer, Stephen;
Huckaby, Jennifer;
Steer, Michael B.

Publication type:

Article

Schottky Diodes and Thin Films Based on Copolymer: Poly(aniline-co-toluidine).

Published in:

Active & Passive Electronic Components, 2009, v. 2009, p. 1, doi. 10.1155/2009/378086

By:

Elmansouri, A.;
Hadik, N.;
Outzourhit, A.;
Lachkar, A.;
Abouelaoualim, A.;
Achour, M. E.;
Oueriagli, A.;
Ameziane, E. L.

Publication type:

Article

Featureless Broadband Chaos Through Cascaded Optically Injected Semiconductor Lasers.

Published in:

Photonics, 2025, v. 12, n. 4, p. 325, doi. 10.3390/photonics12040325

By:

AlMulla, Mohammad

Publication type:

Article

The Proposal of a Photon–Photon Resonance Control Scheme by Using an Active MMI Laser Diode.

Published in:

Photonics, 2023, v. 10, n. 12, p. 1298, doi. 10.3390/photonics10121298

By:

Xiao, He;
Kawano, Yudai;
Jiang, Haisong;
Hamamoto, Kiichi

Publication type:

Article

High-Resolution Simulation of Externally Injected Lasers Revealing a Large Regime of Noise-Induced Chaos.

Published in:

Photonics, 2022, v. 9, n. 2, p. 83, doi. 10.3390/photonics9020083

By:

O'Duill, Sean P.;
Barry, Liam P.

Publication type:

Article

Statistics of the Optical Phase of a Gain-Switched Semiconductor Laser for Fast Quantum Randomness Generation.

Published in:

Photonics, 2021, v. 8, n. 9, p. 388, doi. 10.3390/photonics8090388

By:

Valle, Angel

Publication type:

Article

Spectral Output of Homogeneously Broadened Semiconductor Lasers.

Published in:

Photonics, 2021, v. 8, n. 8, p. 340, doi. 10.3390/photonics8080340

By:

Cassidy, Daniel T.

Publication type:

Article

Recent Progress of Electrically Pumped AlGaN Diode Lasers in the UV-B and -C Bands.

Published in:

Photonics, 2021, v. 8, n. 7, p. 267, doi. 10.3390/photonics8070267

By:

Hasan, Syed M. N.;
You, Weicheng;
Sumon, Md Saiful Islam;
Arafin, Shamsul

Publication type:

Article

Special Issue "Semiconductor Laser Dynamics: Fundamentals and Applications".

Published in:

2020

By:

Lenstra, Daan

Publication type:

Editorial

A Comparison between off and On-Chip Injection Locking in a Photonic Integrated Circuit.

Published in:

Photonics, 2019, v. 6, n. 4, p. 103, doi. 10.3390/photonics6040103

By:

Perrott, Alison H.;
Caro, Ludovic;
Dernaika, Mohamad;
Peters, Frank H.

Publication type:

Article

Spatially indirect transitions in electric field tunable quantum dot diodes.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 3, p. 437, doi. 10.1002/pssb.201552591

By:

Rai, Ashish K.;
Gordon, Simon;
Ludwig, Arne;
Wieck, Andreas D.;
Zrenner, Artur;
Reuter, Dirk

Publication type:

Article