Works matching DE "SEMICONDUCTOR diffusion"
Results: 30
Large disparity between gallium and antimony self-diffusion in gallium antimonide.
- Published in:
- Nature, 2000, v. 408, n. 6808, p. 69, doi. 10.1038/35040526
- By:
- Publication type:
- Article
Global Existence and Extinction of Weak Solutions to a Class of Semiconductor Equations with Fast Diffusion Terms.
- Published in:
- Journal of Inequalities & Applications, 2008, v. 2008, p. 1, doi. 10.1155/2008/961045
- By:
- Publication type:
- Article
Applications of Fast Scanning Tunneling Microscopy: A Review.
- Published in:
- Materials & Manufacturing Processes, 2007, v. 22, n. 1, p. 22, doi. 10.1080/10426910601015824
- By:
- Publication type:
- Article
An analysis of a kick-out diffusion mechanism with charge effects.
- Published in:
- Quarterly Journal of Mechanics & Applied Mathematics, 1998, v. 51, n. 4, p. 515, doi. 10.1093/qjmam/51.4.515
- By:
- Publication type:
- Article
Laser-assisted selective emitters and the role of laser doping.
- Published in:
- Photovoltaics International, 2009, n. 5, p. 84
- By:
- Publication type:
- Article
MONTE CARLO SIMULATION OF THE KINETICS IN THE GROWTH OF SEMICONDUCTOR QUANTUM DOTS.
- Published in:
- Modern Physics Letters B, 2011, v. 25, n. 7, p. 465, doi. 10.1142/S0217984911025869
- By:
- Publication type:
- Article
Efficient Outdiffusion of Hydrogen from Mg-Doped Nitrides by NF<sub>3</sub> Annealing.
- Published in:
- Journal of Electronic Materials, 2009, v. 38, n. 4, p. 538, doi. 10.1007/s11664-009-0681-y
- By:
- Publication type:
- Article
Lateral carrier confinement and threshold current reduction in InGaN QW lasers with deeply etched mesa.
- Published in:
- Optical & Quantum Electronics, 2011, v. 42, n. 11-13, p. 747, doi. 10.1007/s11082-011-9471-x
- By:
- Publication type:
- Article
Mathematical aspects of semiconductor modeling.
- Published in:
- Nonlinear Studies, 1999, v. 6, n. 2, p. 231
- By:
- Publication type:
- Article
Heterogeneous Combustion of a Pair of Interacting Particles with an Arbitrarily Shaped Surface.
- Published in:
- Technical Physics, 2002, v. 47, n. 11, p. 1345, doi. 10.1134/1.1522100
- By:
- Publication type:
- Article
Interfacial reactions and diffusion path in gold-tin-nickel system during eutectic or thermo-compression bonding for 200 mm MEMS wafer level hermetic packaging.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 3427, doi. 10.1007/s10854-015-2852-3
- By:
- Publication type:
- Article
Palladium diffusion in germanium.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 3787, doi. 10.1007/s10854-015-2903-9
- By:
- Publication type:
- Article
Effect of dopants on the epitaxial growth and oxygen diffusion behaviors of CeO buffer layer for coated conductors.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 3874, doi. 10.1007/s10854-015-2914-6
- By:
- Publication type:
- Article
Activation kinetics of the As acceptor in HgCdTe.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 1, p. 67, doi. 10.1007/s10854-007-9269-6
- By:
- Publication type:
- Article
Photocurrent diffusion length in disordered GaN.
- Published in:
- Journal of Materials Science: Materials in Electronics, 2007, v. 18, p. 107, doi. 10.1007/s10854-007-9160-5
- By:
- Publication type:
- Article
Photoacoustic investigation of the effective diffusivity of two-layer semiconductors.
- Published in:
- Molecular Physics, 2002, v. 100, n. 19, p. 3133, doi. 10.1080/00268970210139877
- By:
- Publication type:
- Article
Memristor Kinetics and Diffusion Characteristics for Mixed Anionic-Electronic SrTiO<sub>3-δ</sub> Bits: The Memristor-Based Cottrell Analysis Connecting Material to Device Performance.
- Published in:
- Advanced Functional Materials, 2014, v. 24, n. 47, p. 7448, doi. 10.1002/adfm.201402286
- By:
- Publication type:
- Article
Electron microscopy study of ion beam synthesized β-FeSi<sub>2</sub>.
- Published in:
- Journal of Materials Science, 2007, v. 42, n. 1, p. 207, doi. 10.1007/s10853-006-1053-0
- By:
- Publication type:
- Article
Impurity diffusion through strained semiconductors.
- Published in:
- Quarterly Journal of Mechanics & Applied Mathematics, 2005, v. 58, n. 4, p. 615, doi. 10.1093/qjmam/hbi025
- By:
- Publication type:
- Article
CHUA'S CIRCUITS SYNCHRONIZATION WITH DIFFUSIVE COUPLING:: NEW RESULTS.
- Published in:
- International Journal of Bifurcation & Chaos in Applied Sciences & Engineering, 2009, v. 19, n. 9, p. 3103, doi. 10.1142/S0218127409024670
- By:
- Publication type:
- Article
Superionic conductivity in TlGaTe crystals.
- Published in:
- Semiconductors, 2011, v. 45, n. 8, p. 975, doi. 10.1134/S1063782611080161
- By:
- Publication type:
- Article
The role of nonequilibrium charge in generation of the thermopower in extrinsic semiconductors.
- Published in:
- Semiconductors, 2011, v. 45, n. 5, p. 593, doi. 10.1134/S1063782611050174
- By:
- Publication type:
- Article
Radiation damage of contact structures with diffusion barriers exposed to irradiation with <sup>60</sup>Coγ-ray photons.
- Published in:
- Semiconductors, 2010, v. 44, n. 4, p. 448, doi. 10.1134/S106378261004007X
- By:
- Publication type:
- Article
Theoretical and experimental studies of surface processes in the course of molecular-beam epitaxy of gallium nitride.
- Published in:
- Semiconductors, 2009, v. 43, n. 3, p. 403, doi. 10.1134/S1063782609030270
- By:
- Publication type:
- Article
Relaxation of parameters of thin-film electroluminescent ZnS:Mn-based structures when turned off.
- Published in:
- Semiconductors, 2008, v. 42, n. 6, p. 675, doi. 10.1134/S1063782608060080
- By:
- Publication type:
- Article
A Model of High- and Low-Temperature Phosphorus Diffusion in Silicon by a Dual Pair Mechanism.
- Published in:
- Semiconductors, 2001, v. 35, n. 11, p. 1231, doi. 10.1134/1.1418063
- By:
- Publication type:
- Article
Measurement of the diffusion length of minority charge carriers using real Schottky barriers.
- Published in:
- Semiconductors, 1997, v. 31, n. 7, p. 661, doi. 10.1134/1.1187060
- By:
- Publication type:
- Article
THE STUDY OF THE BIOMORPHIC SILICON CARBIDE STRUCTURE BY RAMAN SPECTROSCOPY.
- Published in:
- Naukovi visti NTUU - KPI, 2010, v. 2010, n. 4, p. 151
- Publication type:
- Article
Nanoscale volume diffusion.
- Published in:
- Journal of Materials Science, 2011, v. 46, n. 20, p. 6465, doi. 10.1007/s10853-011-5720-4
- By:
- Publication type:
- Article
Tracking and reconstruction methods for moving-interfaces.
- Published in:
- Applied Mathematics & Mechanics, 2004, v. 25, n. 3, p. 307, doi. 10.1007/BF02437334
- By:
- Publication type:
- Article