Works matching DE "SEMICONDUCTOR defects"
Results: 337
Contrastive Learning with Global and Local Representation for Mixed-Type Wafer Defect Recognition.
- Published in:
- Sensors (14248220), 2025, v. 25, n. 4, p. 1272, doi. 10.3390/s25041272
- By:
- Publication type:
- Article
Tracking down causes of DUV sub-pellicle defects.
- Published in:
- Solid State Technology, 2000, v. 43, n. 6, p. 159
- By:
- Publication type:
- Article
Deposits on semiconductor corona emitters in cleanroom and...
- Published in:
- Solid State Technology, 1998, v. 41, n. 7, p. 249
- By:
- Publication type:
- Article
Reducing defects to manage yield.
- Published in:
- Solid State Technology, 1998, v. 41, n. 3, p. 86
- By:
- Publication type:
- Article
Acoustic imaging finds `halo' defect in flip changes.
- Published in:
- Solid State Technology, 1998, v. 41, n. 1, p. 30
- By:
- Publication type:
- Article
Impact of the Catalytic System on the Formation of Structural Defects for the Synthesis of Well-Defined Donor-Acceptor Semiconducting Polymers.
- Published in:
- Macromolecular Chemistry & Physics, 2017, v. 218, n. 23, p. n/a, doi. 10.1002/macp.201700283
- By:
- Publication type:
- Article
Formation and characterization of semiconductor Ca<sub>2</sub>Si layers prepared on p-type silicon covered by an amorphous silicon cap.
- Published in:
- Journal of Materials Science, 2013, v. 48, n. 7, p. 2872, doi. 10.1007/s10853-012-6945-6
- By:
- Publication type:
- Article
Native point defects in binary InP semiconductors.
- Published in:
- Journal of Materials Science, 2012, v. 47, n. 21, p. 7482, doi. 10.1007/s10853-012-6595-8
- By:
- Publication type:
- Article
Local and global diffusion in the Arnold web of a priori unstable systems.
- Published in:
- Celestial Mechanics & Dynamical Astronomy, 2008, v. 102, n. 1-3, p. 13
- By:
- Publication type:
- Article
On the time scale of energy transport in the sun.
- Published in:
- Solar Physics, 2003, v. 212, n. 1, p. 3, doi. 10.1023/A:1022952621810
- By:
- Publication type:
- Article
Thiol-based defect healing of WSe<sub>2</sub> and WS<sub>2</sub>.
- Published in:
- NPJ 2D Materials & Applications, 2023, v. 7, n. 1, p. 1, doi. 10.1038/s41699-023-00421-0
- By:
- Publication type:
- Article
Layer-dependent Schottky contact at van der Waals interfaces: V-doped WSe<sub>2</sub> on graphene.
- Published in:
- NPJ 2D Materials & Applications, 2022, v. 6, n. 1, p. 1, doi. 10.1038/s41699-022-00342-4
- By:
- Publication type:
- Article
Donor-acceptor pairs in wide-bandgap semiconductors for quantum technology applications.
- Published in:
- NPJ Computational Materials, 2024, v. 10, n. 1, p. 1, doi. 10.1038/s41524-023-01190-6
- By:
- Publication type:
- Article
Model of DX-like Impurity Centers in PbTe(Ga).
- Published in:
- JETP Letters, 2000, v. 72, n. 3, p. 123, doi. 10.1134/1.1316813
- By:
- Publication type:
- Article
Effect of a magnetic field on thermally activated tunneling ionization of impurity centers in semiconductors.
- Published in:
- JETP Letters, 1998, v. 68, n. 10, p. 804
- By:
- Publication type:
- Article
Encoding Two-Qubit Logical States and Quantum Operations Using the Energy States of a Physical System.
- Published in:
- Technologies (2227-7080), 2022, v. 10, n. 1, p. N.PAG, doi. 10.3390/technologies10010001
- By:
- Publication type:
- Article
Numerical proceeding to calculate impurity states in 2D semiconductor heterostructures.
- Published in:
- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-81346-6
- By:
- Publication type:
- Article
Defect engineering in organic semiconductor based metal-dielectric photonic crystals.
- Published in:
- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-78971-6
- By:
- Publication type:
- Article
Dispersion of Defects in TiO2 Semiconductor: Oxygen Vacancies in the Bulk and Surface of Rutile and Anatase.
- Published in:
- Catalysts (2073-4344), 2020, v. 10, n. 4, p. 397, doi. 10.3390/catal10040397
- By:
- Publication type:
- Article
Electronic structures of alloy quantum dots with nonuniform composition.
- Published in:
- European Physical Journal B: Condensed Matter, 2011, v. 81, n. 4, p. 425, doi. 10.1140/epjb/e2011-20153-7
- By:
- Publication type:
- Article
Surface of underdoped YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-</sub><sub>δ</sub> as revealed by STM/STS.
- Published in:
- European Physical Journal B: Condensed Matter, 2009, v. 69, n. 4, p. 483, doi. 10.1140/epjb/e2009-00198-y
- By:
- Publication type:
- Article
Coherence transition in granular YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7-δ</sub>, YBa<sub>2</sub>Cu<sub>2.95</sub>Zn<sub>0.05</sub>O<sub>7-δ</sub>, and YBa<sub>1.75</sub>Sr<sub>0.25</sub>Cu<sub>3</sub>O<sub>7-δ</sub> superconductors.
- Published in:
- European Physical Journal B: Condensed Matter, 2007, v. 58, n. 2, p. 107, doi. 10.1140/epjb/e2007-00207-3
- By:
- Publication type:
- Article
Increase of Curie temperature in fixed ionic radius Ba<sub>1+x</sub> Sr<sub>1—3x</sub> La<sub>2x</sub> FeMoO<sub>6</sub> double perovskites.
- Published in:
- European Physical Journal B: Condensed Matter, 2004, v. 39, n. 1, p. 35, doi. 10.1140/epjb/e2004-00167-0
- By:
- Publication type:
- Article
DSCU-Net: MEMS Defect Detection Using Dense Skip-Connection U-Net.
- Published in:
- Symmetry (20738994), 2024, v. 16, n. 3, p. 300, doi. 10.3390/sym16030300
- By:
- Publication type:
- Article
Electrochemical Oxidations of p-Doped Semiconducting Single-Walled Carbon Nanotubes.
- Published in:
- Journal of Nanotechnology, 2016, p. 1, doi. 10.1155/2016/8073593
- By:
- Publication type:
- Article
THE RESEARCH OF QUENCHING EFFECT IN GRADIENT-BANDGAP CdSSe NANOWIRE.
- Published in:
- Surface Review & Letters, 2019, v. 26, n. 5, p. N.PAG, doi. 10.1142/S0218625X18501949
- By:
- Publication type:
- Article
A CMOS REACTION–DIFFUSION DEVICE USING MINORITY-CARRIER DIFFUSION IN SEMICONDUCTORS.
- Published in:
- International Journal of Bifurcation & Chaos in Applied Sciences & Engineering, 2007, v. 17, n. 5, p. 1713, doi. 10.1142/S0218127407018014
- By:
- Publication type:
- Article
Lowest limit for detection of impurity concentration in semiconductors by fluorescence XAFS: resonant Raman scattering and angle dependence.
- Published in:
- Journal of Synchrotron Radiation, 2005, v. 12, n. 4, p. 494, doi. 10.1107/S0909049505011003
- By:
- Publication type:
- Article
Using diffusion tensor imaging to identify corticospinal tract projection patterns in children with unilateral spastic cerebral palsy.
- Published in:
- 2017
- By:
- Publication type:
- journal article
SPOTLIGHT ON TUTORIALS.
- Published in:
- Electronic Device Failure Analysis, 2024, v. 26, n. 2, p. 42
- By:
- Publication type:
- Article
FAILURE ANALYSIS, STATISTICAL RISK ASSESSMENT, AND ADVANCED MODELING IN A STRUCTURED PROBLEM SOLVING APPROACH: CASE STUDY FOR A DELAMINATION DEFECT IN THE AUTOMOTIVE SEMICONDUCTOR INDUSTRY.
- Published in:
- Electronic Device Failure Analysis, 2020, v. 22, n. 3, p. 8, doi. 10.31399/asm.edfa.2020-3.p008
- By:
- Publication type:
- Article
SEMICONDUCTOR YIELD MODELING: A PRIMER.
- Published in:
- Electronic Device Failure Analysis, 2018, v. 20, n. 3, p. 4, doi. 10.31399/asm.edfa.2018-3.p004
- By:
- Publication type:
- Article
CHALLENGES FOR BEYOND 14 NM SEMICONDUCTOR FAILURE ANALYSIS.
- Published in:
- 2018
- By:
- Publication type:
- Editorial
SILICON PIPELINE OR DISLOCATION DEFECT?
- Published in:
- Electronic Device Failure Analysis, 2016, v. 18, n. 1, p. 4, doi. 10.31399/asm.edfa.2016-1.p004
- By:
- Publication type:
- Article
The System Challenge in Failure Analysis.
- Published in:
- 2014
- By:
- Publication type:
- Editorial
Research, Development, and Commercialization of Scanning Optical Microscope Technology for Failure Analysis of Advanced Integrated Circuits.
- Published in:
- Electronic Device Failure Analysis, 2013, v. 15, n. 3, p. 28
- By:
- Publication type:
- Article
Structural features of Σ = 19, [110] GaAs tilt grain boundaries.
- Published in:
- Journal of Materials Science, 2001, v. 36, n. 18, p. 4511, doi. 10.1023/A:1017943105582
- By:
- Publication type:
- Article
So-Gel Synthesis of Dy Co-Doped ZnO:V Nanoparticles for Optoelectronic Applications.
- Published in:
- Condensed Matter, 2021, v. 6, n. 3, p. 1, doi. 10.3390/condmat6030035
- By:
- Publication type:
- Article
Universal NBTI Compact Model Replicating AC Stress/Recovery from a Single-shot Long-term DC Measurement.
- Published in:
- IPSJ Transactions on System LSI Design Methodology, 2020, v. 13, n. 1, p. 56, doi. 10.2197/ipsjtsldm.13.56
- By:
- Publication type:
- Article
Percolation nature of the 60-K to 90-K phase transition in YBa<sub>2</sub>Cu<sub>3</sub>O<sub>6 + δ</sub>.
- Published in:
- Journal of Experimental & Theoretical Physics, 2010, v. 110, n. 5, p. 783, doi. 10.1134/S1063776110050080
- By:
- Publication type:
- Article
Reversal of the resistive switching effect in electron-doped Ba<sub>0.6</sub>K<sub>0.4</sub>BiO<sub>3− x </sub>.
- Published in:
- Journal of Experimental & Theoretical Physics, 2007, v. 105, n. 1, p. 238, doi. 10.1134/S1063776107070527
- By:
- Publication type:
- Article
Light-emitting-diode inspection using a flatbed scanner.
- Published in:
- Optical Engineering, 2008, v. 47, n. 10, p. 103602, doi. 10.1117/1.2995991
- By:
- Publication type:
- Article
Modeling the Destruction of the p-n Junction by Electromagnetic Pulses.
- Published in:
- Journal of Nano- & Electronic Physics, 2023, v. 15, n. 4, p. 1, doi. 10.21272/jnep.15(4).04033
- By:
- Publication type:
- Article
Mechanical Spectroscopy and Internal Friction in SiO<sub>2</sub>/Si.
- Published in:
- Journal of Nano- & Electronic Physics, 2022, v. 14, n. 6, p. 1, doi. 10.21272/jnep.14(6).06029
- By:
- Publication type:
- Article
Principle of virtual power applied to deformable semiconductors with strain, polarization, and magnetization gradients.
- Published in:
- Acta Mechanica, 2017, v. 228, n. 5, p. 1681, doi. 10.1007/s00707-016-1787-y
- By:
- Publication type:
- Article
Transmission electron microscope study of a threading dislocation with and its effect on leakage in a 4H–SiC MOSFET.
- Published in:
- Philosophical Magazine Letters, 2013, v. 93, n. 8, p. 439, doi. 10.1080/09500839.2013.798047
- By:
- Publication type:
- Article
Application of imaging ellipsometry and white light interference microscopy for detection of defects in epitaxially grown 4H–SiC layers.
- Published in:
- Journal of the European Optical Society, 2023, v. 19, n. 1, p. 1, doi. 10.1051/jeos/2023018
- By:
- Publication type:
- Article
Defect Characterization in SiGe/SOI Epitaxial Semiconductors by Positron Annihilation.
- Published in:
- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1942, doi. 10.1007/s11671-010-9818-4
- By:
- Publication type:
- Article
Deep-level Transient Spectroscopy of GaAs/AlGaAs Multi-Quantum Wells Grown on (100) and (311)B GaAs Substrates.
- Published in:
- Nanoscale Research Letters, 2010, v. 5, n. 12, p. 1948, doi. 10.1007/s11671-010-9820-x
- By:
- Publication type:
- Article
Properties and origin of oval defects in epitaxial structures grown by molecular beam epitaxy.
- Published in:
- Optica Applicata, 2005, v. 35, n. 3, p. 537
- By:
- Publication type:
- Article