Works matching DE "SEMICONDUCTOR defects"

Results: 353

Detecting Important Features and Predicting Yield from Defects Detected by SEM in Semiconductor Production.

Published in:

Sensors (14248220), 2025, v. 25, n. 13, p. 4218, doi. 10.3390/s25134218

By:

Amato, Umberto;
Antoniadis, Anestis;
De Feis, Italia;
Doinychko, Anastasiia;
Gijbels, Irène;
La Magna, Antonino;
Pagano, Daniele;
Piccinini, Francesco;
Selvan Suviseshamuthu, Easter;
Severgnini, Carlo;
Torres, Andres;
Vasquez, Patrizia

Publication type:

Article

Computationally Predicted Electronic Properties and Energetics of Native Defects in Cubic Boron Nitride.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 8, p. 6593, doi. 10.1007/s11664-025-12066-4

By:

Nguyen, Ngoc Linh;
Dang, Hung The;
Pham, Tien Lam;
Nghiem, Thi Minh Hoa

Publication type:

Article

The Principles and Applications of Electrical Characterization Techniques for Electrically Active Defects in 4H‐SiC Devices.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 13, p. 1, doi. 10.1002/pssa.202400840

By:

Luo, Lan;
Zhong, Yu;
Cheong, Kuan Yew;
Zhang, Rui;
Wang, Tianlu;
Yuan, Dengwen;
Linewih, Handoko;
Li, Shuqiang;
Cui, Yingxin;
Xu, Mingsheng;
Xu, Xiangang;
Han, Jisheng

Publication type:

Article

Quantum Light Generation with Ultra‐High Spatial Resolution in 2D Semiconductors via Ultra‐Low Energy Electron Irradiation.

Published in:

Advanced Functional Materials, 2025, v. 35, n. 27, p. 1, doi. 10.1002/adfm.202421684

By:

Dash, Ajit Kumar;
Yadav, Sharad Kumar;
Roux, Sebastien;
Singh, Manavendra Pratap;
Watanabe, Kenji;
Taniguchi, Takashi;
Naik, Akshay;
Robert, Cedric;
Marie, Xavier;
Singh, Akshay

Publication type:

Article

ROLE OF DEFECTS IN SHAPING THE MAGNETIC PROPERTIES OF Gd-DOPED GaN.

Published in:

International Journal of Nanoscience, 2011, v. 10, n. 4/5, p. 555, doi. 10.1142/S0219581X11009386

By:

MISHRA, J. K.;
DHAR, S.;
KHADERABAD, M. A.

Publication type:

Article

Al doping effect on microstructure, electrical properties, dielectric characteristics, and aging behaviors of ZPCCY-based varistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, n. 8, p. 718, doi. 10.1007/s10854-008-9793-z

By:

Nahm, Choon-W.

Publication type:

Article

Interpretation of lifetime and defect spectroscopy measurements by generalized rate equations.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 79, doi. 10.1007/s10854-008-9616-2

By:

Hahn, T.;
Schmerler, S.;
Hahn, S.;
Niklas, J. R.;
Gruendig-Wendrock, B.

Publication type:

Article

Doping of phthalocyanine films: structural reorganization versus acceptor effect.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 6, p. 500, doi. 10.1007/s10854-007-9370-x

By:

Pakhomov, Georgy L.;
Kosterin, Dmitry A.;
Pakhomov, Lev G.;
Guo, Tzung-Fang

Publication type:

Article

Determination of carrier mobility vs resistivity relation in Czochralski-grown n- and p-type Si x Ge1− x (0.93 < x < 0.96) single crystals.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 4, p. 315, doi. 10.1007/s10854-007-9338-x

By:

Yonenaga, I.

Publication type:

Article

Microstructure and mechanical properties of Lead-free Sn–Cu solder composites prepared by rapid directional solidification.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 12, p. 1235, doi. 10.1007/s10854-007-9131-x

By:

Jun Shen;
Yongchang Liu;
Yajing Han;
Houxiu Gao

Publication type:

Article

Conductance analysis of (Co, Nb, Fe)-doped SnO2 thick film gas sensors.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 12, p. 1171, doi. 10.1007/s10854-007-9276-7

By:

Ponce, Miguel Adolfo;
Parra, Rodrigo;
Castro, Miriam S.;
Aldao, Celso M.

Publication type:

Article

Effect of Mn doping on the structural, morphological, optical and magnetic properties of indium tin oxide films.

Published in:

Journal of Materials Science: Materials in Electronics, 2007, v. 18, n. 12, p. 1197, doi. 10.1007/s10854-007-9277-6

By:

Reddy, K. M.;
Hays, J.;
Kundu, S.;
Dua, L. K.;
Biswas, P. K.;
Wang, C.;
Shutthanandan, V.;
Engelhard, M. H.;
Mathew, X.;
Punnoose, A.

Publication type:

Article

Correlative Defect Characterization in Semiconductors via Electron Channeling Contrast Imaging and Scanning Deep Level Transient Spectroscopy.

Published in:

2019

By:

Grassman, T. J.;
Galiano, K.;
Deitz, J. I.;
Carnevale, S. D.;
Gleason, D. A.;
Zhang, Z.;
Ringel, S. A.;
Arehart, A. R.;
Pelz, J. P.

Publication type:

Abstract

High Resolution EELS of Point Defects in a Nitride Semiconductor Material.

Published in:

Microscopy & Microanalysis, 2019, p. 430, doi. 10.1017/S1431927618002647

By:

March, Katia;
Wang, Shuo;
Ponce, Fernando A.;
Rez, Peter

Publication type:

Article

Chip-Level Defect Analysis with Virtual Bad Wafers Based on Huge Big Data Handling for Semiconductor Production.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 11, p. 2205, doi. 10.3390/electronics13112205

By:

Kim, Jinsik;
Joe, Inwhee

Publication type:

Article

Review of Wafer Surface Defect Detection Methods.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 8, p. 1787, doi. 10.3390/electronics12081787

By:

Ma, Jianhong;
Zhang, Tao;
Yang, Cong;
Cao, Yangjie;
Xie, Lipeng;
Tian, Hui;
Li, Xuexiang

Publication type:

Article

Electrical Noise and Semiconductor Reliability.

Published in:

Electrotehnica, Electronica, Automatica, 2023, v. 71, n. 4, p. 51, doi. 10.46904/eea.23.71.4.1108006

By:

BĂJENESCU, Titu-Marius I.

Publication type:

Article

Metal-induced n+/n homojunction for ultrahigh electron mobility transistors.

Published in:

NPG Asia Materials, 2020, v. 12, n. 1, p. 1, doi. 10.1038/s41427-020-00271-y

By:

Park, Ji-Min;
Kim, Hyoung-Do;
Joh, Hongrae;
Jang, Seong Cheol;
Park, Kyung;
Park, Yun Chang;
Nahm, Ho-Hyun;
Kim, Yong-Hyun;
Jeon, Sanghun;
Kim, Hyun-Suk

Publication type:

Article

Modeling the Destruction of the p-n Junction by Electromagnetic Pulses.

Published in:

Journal of Nano- & Electronic Physics, 2023, v. 15, n. 4, p. 1, doi. 10.21272/jnep.15(4).04033

By:

Sergeyev, D.;
Shunkeyev, K.;
Zhanturina, N.;
Solovjov, A. L.

Publication type:

Article

Mechanical Spectroscopy and Internal Friction in SiO2/Si.

Published in:

Journal of Nano- & Electronic Physics, 2022, v. 14, n. 6, p. 1, doi. 10.21272/jnep.14(6).06029

By:

Onanko, A. P.;
Kuryliuk, V. V.;
Onanko, Y. A.;
Kuryliuk, A. M.;
Charnyi, D. V.;
Dmytrenko, O. P.;
Kulish, M. P.;
Pinchuk-Rugal, T. M.;
Kuzmych, A. A.

Publication type:

Article

Ultra‐Doped Semiconductors by Non‐Equilibrium Processing.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 24, p. 1, doi. 10.1002/pssa.202400887

By:

Zhou, Shengqiang;
Pastor, David;
Napolitani, Enrico;
Chang, Guo‐En

Publication type:

Article

Advanced Thermoluminescence Spectroscopy as a Research Tool for Semiconductor and Photonic Materials: A Review and Perspective.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 10, p. 1, doi. 10.1002/pssa.202200712

By:

Selim, Farida A.

Publication type:

Article

Comparison of the Properties of Defect States in Nitrogen‐Containing n‐ and p‐Type Float‐Zone Silicon: A Combined Deep‐Level Transient Spectroscopy and Minority‐Carrier Transient Spectroscopy Study.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 3, p. 1, doi. 10.1002/pssa.202200633

By:

Scheffler, Leopold;
Lei, Anders;
Duun, Sune;
Julsgaard, Brian

Publication type:

Article

Gettering and Defect Engineering in Semiconductor Technology (GADEST 2022).

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 17, p. 1, doi. 10.1002/pssa.202200562

By:

Brehm, Moritz;
Springholz, Gunther

Publication type:

Article

Temperature dependence of photoconductivity in layered semiconductor p-GaSe.

Published in:

European Physical Journal B: Condensed Matter, 2024, v. 97, n. 6, p. 1, doi. 10.1140/epjb/s10051-024-00731-2

By:

Naghiyev, T. G.;
Babayeva, R. F.;
Aliyev, Y. I.

Publication type:

Article

Thermally activated diffusion of impurities along a semiconductor layer.

Published in:

European Physical Journal B: Condensed Matter, 2022, v. 95, n. 1, p. 1, doi. 10.1140/epjb/s10051-021-00265-x

By:

Abebe, Yoseph;
Birhanu, Tibebe;
Demeyu, Lemi;
Taye, Mesfin;
Bekele, Mulugeta;
Bassie, Yigermal

Publication type:

Article

Electronic structures of alloy quantum dots with nonuniform composition.

Published in:

European Physical Journal B: Condensed Matter, 2011, v. 81, n. 4, p. 425, doi. 10.1140/epjb/e2011-20153-7

By:

Ye, H.;
Lu, P.;
Yu, Z.;
Wang, D.;
Liu, Y.

Publication type:

Article

Electrochemical Oxidations of p-Doped Semiconducting Single-Walled Carbon Nanotubes.

Published in:

Journal of Nanotechnology, 2016, p. 1, doi. 10.1155/2016/8073593

By:

Li, Huaping;
Zhou, Lili

Publication type:

Article

Influence of nonlinear semiconductor layer on optical properties in one-dimensional photonic crystals.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2024, v. 38, n. 21, p. 1, doi. 10.1142/S0217979224502825

By:

Gharaati, Abdolrasoul;
Mahmoodi, Abdolreza

Publication type:

Article

The effect of vacancy-defects on the magnetic properties of ZnSn1−xVxAs2: An ab initio study.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2020, v. 34, n. 30, p. N.PAG, doi. 10.1142/S0217979220502859

By:

Orudzhev, G. S.;
Jafarova, V. N.;
Huseynova, S. S.;
Gasimova, E. K.

Publication type:

Article

NATIVE DEFECT COMPENSATION IN III-ANTIMONIDE BULK SUBSTRATES.

Published in:

International Journal of High Speed Electronics & Systems, 2004, v. 14, n. 3, p. 34, doi. 10.1142/S0129156404002636

By:

Pino, Robinson;
Ko, Youngok;
Dutta, Partha S.

Publication type:

Article

The Effect of Stress Fields Produced by Growth Defects on the Dielectric Photoresponse of Cd[sub 1 – ][sub x]Zn[sub x]Te Crystals.

Published in:

Semiconductors, 2001, v. 35, n. 2, p. 135, doi. 10.1134/1.1349918

By:

Klimenko, I. A.;
Komar’, V. K.;
Migal’, V. P.;
Nalivaıko, D. P.

Publication type:

Article

Radiation Defects in n-4H-SiC Irradiated with 8-MeV Protons.

Published in:

Semiconductors, 2000, v. 34, n. 9, p. 1016, doi. 10.1134/1.1309411

By:

Lebedev, A. A.;
Veınger, A. I.;
Davydov, D. V.;
Kozlovskiı, V. V.;
Savkina, N. S.;
Strel’chuk, A. M.

Publication type:

Article

Generation of Bulk Defects in Some Semiconductors by Laser Radiation in the Transparency Region of the Crystal.

Published in:

Semiconductors, 2000, v. 34, n. 9, p. 1004, doi. 10.1134/1.1309406

By:

Plyatsko, S. V.

Publication type:

Article

Thermodynamics of Complex Formation and Defect Clustering in Semiconductors.

Published in:

Semiconductors, 2000, v. 34, n. 4, p. 371, doi. 10.1134/1.1187990

By:

Bulyarskiı, S. V.;
Svetukhin, V. V.;
L’vov, P. E.

Publication type:

Article

Traveling waves in a one-dimensional heterogeneous medium

Published in:

Annales de l'Institut Henri Poincaré C, 2009, v. 26, n. 3, p. 1021, doi. 10.1016/j.anihpc.2009.02.003

By:

Nolen, James;
Ryzhik, Lenya

Publication type:

Article

Asymptotic spreading of KPP reactive fronts in incompressible space–time random flows

Published in:

Annales de l'Institut Henri Poincaré C, 2009, v. 26, n. 3, p. 815, doi. 10.1016/j.anihpc.2008.02.005

By:

Nolen, James;
Xin, Jack

Publication type:

Article

Thermally Dependent Metastability of Indium-Tungsten-Oxide Thin-Film Transistors.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 6, p. 4319, doi. 10.1007/s11664-025-11770-5

By:

Powell, Eli;
Nagesha, Meghana;
Manley, Robert G.;
Zhu, Bin;
Hirschman, Karl D.

Publication type:

Article

Impact of the Catalytic System on the Formation of Structural Defects for the Synthesis of Well-Defined Donor-Acceptor Semiconducting Polymers.

Published in:

Macromolecular Chemistry & Physics, 2017, v. 218, n. 23, p. n/a, doi. 10.1002/macp.201700283

By:

Spanos, Michael;
Gregoriou, Vasilis G.;
Avgeropoulos, Apostolos;
Chochos, Christos L.

Publication type:

Article

Study of Excited States and Electron Transfer of Semiconductor‐Metal‐Complex Hybrid Photocatalysts for CO2 Reduction by Using Picosecond Time‐Resolved Spectroscopies.

Published in:

Chemistry - A European Journal, 2021, v. 27, n. 3, p. 1127, doi. 10.1002/chem.202004068

By:

Sato, Shunsuke;
Tanaka, Sei'ichi;
Yamanaka, Ken‐ichi;
Saeki, Shu;
Sekizawa, Keita;
Suzuki, Tomiko M.;
Morikawa, Takeshi;
Onda, Ken

Publication type:

Article

Formation and characterization of semiconductor Ca2Si layers prepared on p-type silicon covered by an amorphous silicon cap.

Published in:

Journal of Materials Science, 2013, v. 48, n. 7, p. 2872, doi. 10.1007/s10853-012-6945-6

By:

Dózsa, L.;
Molnár, G.;
Zolnai, Z.;
Dobos, L.;
Pécz, B.;
Galkin, N.;
Dotsenko, S.;
Bezbabny, D.;
Fomin, D.

Publication type:

Article

Native point defects in binary InP semiconductors.

Published in:

Journal of Materials Science, 2012, v. 47, n. 21, p. 7482, doi. 10.1007/s10853-012-6595-8

By:

Mishra, Rohan;
Restrepo, Oscar;
Kumar, Ashutosh;
Windl, Wolfgang

Publication type:

Article

OPTICAL AMMETER FOR INTEGRATED CIRCUIT CHARACTERIZATION AND FAILURE ANALYSIS.

Published in:

Quality & Reliability Engineering International, 1995, v. 11, n. 4, p. 247, doi. 10.1002/qre.4680110406

By:

Claeys, W.;
Dilhaire, S.;
Lewis, D.;
Quintard, V.;
Phan, T.;
Aucouturier, J. L.

Publication type:

Article

Development of a new cluster index for wafer defects.

Published in:

International Journal of Advanced Manufacturing Technology, 2006, v. 31, n. 7/8, p. 705, doi. 10.1007/s00170-005-0240-5

By:

Tong, Lee-Ing;
Wang, Chung-Ho;
Chen, Da-Lun

Publication type:

Article

Different Dimensionalities, Morphological Advancements and Engineering of g‐C3N4‐Based Nanomaterials for Energy Conversion and Storage.

Published in:

Chemical Record, 2023, v. 23, n. 5, p. 1, doi. 10.1002/tcr.202200171

By:

Hayat, Asif;
Sohail, Muhammad;
El Jery, Atef;
Al‐Zaydi, Khadijah M.;
Alshammari, Khaled F;
Khan, Javid;
Ali, Hamid;
Ajmal, Zeeshan;
Taha, T. A.;
Ud Din, Israf;
Altamimi, Rashid;
Hussein, Mahmoud Ali;
Al‐Hadeethi, Yas;
Orooji, Yasin;
Ansari, Mohd Zahid

Publication type:

Article

Improved segmentation of semiconductor defects using area sieves.

Published in:

Machine Vision & Applications, 2006, v. 17, n. 1, p. 1, doi. 10.1007/s00138-005-0004-0

By:

Shankar, N. G.;
Zhong, Z. W.

Publication type:

Article

Solid-state physics: Doping the undopable.

Published in:

Nature, 2005, v. 436, n. 7047, p. 32, doi. 10.1038/436032a

By:

Galli, Giulia

Publication type:

Article

Doping semiconductor nanocrystals.

Published in:

Nature, 2005, v. 436, n. 7047, p. 91, doi. 10.1038/nature03832

By:

Erwin, Steven C.;
Zu, Lijun;
Haftel, Michael I.;
Efros, Alexander L.;
Kennedy, Thomas A.;
Norris, David J.

Publication type:

Article

Photoluminescence of Poly(methyl methacrylate)/[(Zn,Cd)S:Mn,Cu,Eu] Composites.

Published in:

Technical Physics Letters, 2021, v. 47, n. 11, p. 818, doi. 10.1134/S1063785021080253

By:

Smagin, V. P.;
Isaeva, A. A.

Publication type:

Article

The Schottky Barrier on a Contact of a Magnetic 3d Metal with a Semiconductor.

Published in:

Technical Physics Letters, 2021, v. 47, n. 7, p. 550, doi. 10.1134/S1063785021060079

By:

Davydov, S. Yu.;
Posrednik, O. V.

Publication type:

Article