Works matching DE "SELECTIVE area epitaxy"

Results: 9

The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 12, p. 9753, doi. 10.1007/s10854-015-3645-4

By:

Yang, Fan;
Yao, Yao;
He, Zhiyuan;
Zhou, Guilin;
Zheng, Yue;
He, Liang;
Zhang, Jincheng;
Ni, Yiqiang;
Zhou, Deqiu;
Shen, Zhen;
Zhong, Jian;
Wu, Zhisheng;
Zhang, Baijun;
Liu, Yang

Publication type:

Article

Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells.

Published in:

Physica Status Solidi (B), 2016, v. 253, n. 1, p. 180, doi. 10.1002/pssb.201552277

By:

Leute, Robert A. R.;
Heinz, Dominik;
Wang, Junjun;
Meisch, Tobias;
Müller, Marcus;
Schmidt, Gordon;
Metzner, Sebastian;
Veit, Peter;
Bertram, Frank;
Christen, Jürgen;
Martens, Martin;
Wernicke, Tim;
Kneissl, Michael;
Jenisch, Stefan;
Strehle, Steffen;
Rettig, Oliver;
Thonke, Klaus;
Scholz, Ferdinand

Publication type:

Article

Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates.

Published in:

Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-77681-z

By:

Karrakchou, Soufiane;
Sundaram, Suresh;
Ayari, Taha;
Mballo, Adama;
Vuong, Phuong;
Srivastava, Ashutosh;
Gujrati, Rajat;
Ahaitouf, Ali;
Patriarche, Gilles;
Leichlé, Thierry;
Gautier, Simon;
Moudakir, Tarik;
Voss, Paul L.;
Salvestrini, Jean Paul;
Ougazzaden, Abdallah

Publication type:

Article

GaN nanocolumn arrays with diameter <30 nm prepared by two-step selective area growth.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 25, p. 2125, doi. 10.1049/el.2015.3259

By:

Kano, T.;
Yoshida, J.;
Miyagawa, R.;
Mizuno, Y.;
Oto, T.;
Kishino, K.

Publication type:

Article

Synthesis of an LED structure on the $$\left( {11\bar 20} \right)$$ and (0001) faces of mesa stripes grown by selective-area epitaxy.

Published in:

Technical Physics Letters, 2014, v. 40, n. 1, p. 18, doi. 10.1134/S1063785014010106

By:

Rozhavskaya, M.;
Lundin, V.;
Sakharov, A.

Publication type:

Article

Origin of broad luminescence from site-controlled InGaN nanodots fabricated by selective-area epitaxy.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 3, p. 531, doi. 10.1002/pssa.201330362

By:

Lee, L. K.;
Aagesen, L. K.;
Thornton, K.;
Ku, P.‐C.

Publication type:

Article

Origin of broad luminescence from site-controlled InGaN nanodots fabricated by selective-area epitaxy (Phys. Status Solidi A 3∕2014).

Published in:

2014

By:

Lee, L. K.;
Aagesen, L. K.;
Thornton, K.;
Ku, P.‐C.

Publication type:

Other

High-current Al Ga N/ Ga N high electron mobility transistors achieved by selective-area growth via plasma-assisted molecular beam epitaxy.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 1, p. 180, doi. 10.1002/pssa.201330157

By:

Pang, Liang;
Krein, Philip;
Kim, Ki‐Won;
Lee, Jung‐Hee;
Kim, Kyekyoon (Kevin)

Publication type:

Article

Selective Area Epitaxial Growth of Stretchable Geometry AlGaN-GaN Heterostructures.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 11, p. 6625, doi. 10.1007/s11664-018-6576-z

By:

Mahaboob, Isra;
Marini, Jonathan;
Hogan, Kasey;
Rocco, Emma;
Tompkins, Randy P.;
Lazarus, Nathan;
Shahedipour-Sandvik, Fatemeh

Publication type:

Article