Works matching DE "SELECTIVE area epitaxy"
Results: 9
Synthesis of an LED structure on the $$\left( {11\bar 20} \right)$$ and (0001) faces of mesa stripes grown by selective-area epitaxy.
- Published in:
- Technical Physics Letters, 2014, v. 40, n. 1, p. 18, doi. 10.1134/S1063785014010106
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- Publication type:
- Article
GaN nanocolumn arrays with diameter <30 nm prepared by two-step selective area growth.
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- Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 25, p. 2125, doi. 10.1049/el.2015.3259
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- Article
The suppression of background doping in selective area growth technique for high performance normally-off AlGaN/GaN MOSFET.
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- Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 12, p. 9753, doi. 10.1007/s10854-015-3645-4
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- Article
Embedded GaN nanostripes on c-sapphire for DFB lasers with semipolar quantum wells.
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- Physica Status Solidi (B), 2016, v. 253, n. 1, p. 180, doi. 10.1002/pssb.201552277
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- Article
Origin of broad luminescence from site-controlled InGaN nanodots fabricated by selective-area epitaxy.
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- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 3, p. 531, doi. 10.1002/pssa.201330362
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- Article
Origin of broad luminescence from site-controlled InGaN nanodots fabricated by selective-area epitaxy (Phys. Status Solidi A 3∕2014).
- Published in:
- 2014
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- Publication type:
- Other
High-current Al Ga N/ Ga N high electron mobility transistors achieved by selective-area growth via plasma-assisted molecular beam epitaxy.
- Published in:
- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 1, p. 180, doi. 10.1002/pssa.201330157
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- Publication type:
- Article
Selective Area Epitaxial Growth of Stretchable Geometry AlGaN-GaN Heterostructures.
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- Journal of Electronic Materials, 2018, v. 47, n. 11, p. 6625, doi. 10.1007/s11664-018-6576-z
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- Publication type:
- Article
Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates.
- Published in:
- Scientific Reports, 2020, v. 10, n. 1, p. 1, doi. 10.1038/s41598-020-77681-z
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- Publication type:
- Article