Works matching DE "SCHOTTKY barrier diodes"

Results: 1339

Effect of the Ultra-thin GaN Interlayer on the Mechanisms of Conduction in Au/GaAs Schottky Barrier Diodes.

Published in:

Semiconductors, 2025, v. 59, n. 6, p. 551, doi. 10.1134/S1063782624602589

By:

Khales, Hammouche;
Kacha, Arslane Hatem;
Akkal, Boudali;
Benamara, Zineb

Publication type:

Article

On comparison of Au/n-Si (MS) Schottky diodes with and without (Brushite + Monetite: PVC) an interlayer grown by spin coating technique.

Published in:

Electrical Engineering, 2025, v. 107, n. 5, p. 6693, doi. 10.1007/s00202-024-02853-3

By:

Sevgili, Ömer;
Şafak Asar, Yasemin;
Altındal, Şemsettin;
Ulusoy, Murat;
Azizian-Kalandaragh, Yashar

Publication type:

Article

Effect of Low-Energy Proton Radiation on the Degradation of Silicon Carbide Schottky Diodes.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 7, p. 5984, doi. 10.1007/s11664-025-11939-y

By:

Baba, Tamana;
Hasbullah, Nurul Fadzlin;
Javed, Yasir;
Khan, Zafar Iqbal;
Sulaiman, Nurul Nabiilah

Publication type:

Article

Deep Learning Method for Breakdown Voltage and Forward I-V Characteristic Prediction of Silicon Carbide Schottky Barrier Diodes.

Published in:

Micromachines, 2025, v. 16, n. 5, p. 583, doi. 10.3390/mi16050583

By:

Zhou, Hao;
Wang, Xiang;
Wang, Shulong;
Liu, Chenyu;
Chen, Dongliang;
Li, Jiarui;
Ma, Lan;
Zhang, Guohao

Publication type:

Article

Demonstration of vertical Ga2O3 Schottky barrier diodes directly on heavily doped single-crystal substrate using thermal oxidation technology.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 283, doi. 10.1140/epjs/s11734-024-01432-8

By:

Liu, Hongyu;
Han, Shida;
Lu, Xiaoli;
Wang, Yuangang;
Dun, Shaobo;
Han, Tingting;
Lv, Yuanjie;
Feng, Zhihong

Publication type:

Article

Cubic boron nitride Schottky diode for vacuum ultraviolet photodetection.

Published in:

European Physical Journal: Special Topics, 2025, v. 234, n. 2, p. 403, doi. 10.1140/epjs/s11734-024-01389-8

By:

Lin, Zhuogeng;
Zhang, Lixin;
Zhu, Siqi;
Wang, Zhao;
Zhang, Naiji;
Wei, Xing;
Zhang, Xiangfa;
Zheng, Wei

Publication type:

Article

Numerical Analysis of Thermal Sensitivity Characteristics by Pinch-Off Model in Inhomogeneous Schottky Barrier Diodes: Numerical Analysis of Thermal Sensitivity Characteristics by Pinch-Off Model in...: A. Turut, H. Efeoǧlu.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 3, p. 2460, doi. 10.1007/s11664-024-11678-6

By:

Turut, Abdulmecit;
Efeoǧlu, Hasan

Publication type:

Article

A Snapback-Free Reverse-Conducting LIGBT with Embedded Anti-parallel Schottky Barrier Diode.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 12, p. 8039, doi. 10.1007/s11664-024-11433-x

By:

Qin, Haifeng;
Shen, Wenliang;
Li, Wei;
Wan, Li;
Chen, Weizhong

Publication type:

Article

Examination of Electrical and Dielectric Parameters of Au/n-Si Schottky Barrier Diodes (SBDs) with Organic Perylene Interlayer Using Impedance Measurements Under Various Illumination Intensities.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 9, p. 5606, doi. 10.1007/s11664-024-11213-7

By:

Bengi, S.;
Çetinkaya, H. G.;
Altındal, Ş.;
Zeyrek, S.

Publication type:

Article

Silicon Ion Implant Activation in β-(Al0.2Ga0.8)2O3.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 6, p. 2811, doi. 10.1007/s11664-024-11075-z

By:

Jacobs, Alan G.;
Spencer, Joseph A.;
Tadjer, Marko J.;
Feigelson, Boris N.;
Lamb, Abbey;
Lee, Ming-Hsun;
Peterson, Rebecca L.;
Alema, Fikadu;
Osinsky, Andrei;
Zhang, Yuhao;
Hobart, Karl D.;
Anderson, Travis J.

Publication type:

Article

PtOx Schottky Contacts on Degenerately Doped 2¯01β-Ga2O3 Substrates.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 6, p. 2798, doi. 10.1007/s11664-024-10966-5

By:

Spencer, Joseph A.;
Jacobs, Alan G.;
Hobart, Karl D.;
Koehler, Andrew D.;
Anderson, Travis J.;
Zhang, Yuhao;
Tadjer, Marko J.

Publication type:

Article

Resistive switching memory utilizing water and titanium dioxide thin film Schottky diode.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 20, p. 18744, doi. 10.1007/s10854-019-02227-7

By:

Khan, Muhammad Umair;
Hassan, Gul;
Bae, Jinho

Publication type:

Article

Effect of annealing temperature on structural and electrical properties of Al/Nb-doped TiO2 Schottky diodes on Pt–Si substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 19, p. 18287, doi. 10.1007/s10854-019-02183-2

By:

Yu, Shihui;
Zhang, Chunmei;
Yang, Pan;
Wu, Muying;
Sun, Yongtao;
Li, Lingxia

Publication type:

Article

Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 16, p. 15371, doi. 10.1007/s10854-019-01913-w

By:

Gullu, H. H.;
Bayraklı Sürücü, Ö.;
Terlemezoglu, M.;
Yildiz, D. E.;
Parlak, M.

Publication type:

Article

Comparative study of fabrication and characterization of Al-ZnO based Schottky barrier diodes using Pd and Au metal contacts.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 14, p. 13280, doi. 10.1007/s10854-019-01691-5

By:

Singh, Manisha R.;
Sahni, Mohit;
Singh, Munendra;
Bhattacharya, Bhaskar;
Kumar, Naresh

Publication type:

Article

III-Nitride-based junction devices round contacts: effect of semiconductor film geometry and characteristics on the capacitance and conductance measurements.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 12, p. 11164, doi. 10.1007/s10854-019-01459-x

By:

Pozos, Heberto Gómez;
Maldonado, Arturo;
Izpura, J. I.;
Muñoz, Elías

Publication type:

Article

3D imaging of backside metallization of SiC-SBD influenced by annealing.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 11, p. 10848, doi. 10.1007/s10854-019-01428-4

By:

Sameshima, Junichiro;
Sugahara, Toru;
Ishina, Toshiyuki;
Nagao, Shijo;
Suganuma, Katsuaki

Publication type:

Article

The modification of ultraviolet illumination to resistive switching behaviors in Ga2O3 memory device.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 9, p. 8629, doi. 10.1007/s10854-019-01185-4

By:

Zhang, Lei;
Yu, Hao;
Xiong, Lingxing;
Zhu, Wenhui;
Wang, Liancheng

Publication type:

Article

Schottky diode based resistive switching device based on ZnO/PEDOT:PSS heterojunction to reduce sneak current problem.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 5, p. 4607, doi. 10.1007/s10854-019-00753-y

By:

Khan, Muhammad Umair;
Hassan, Gul;
Raza, Muhammad Asim;
Bae, Jinho;
Kobayashi, Nobuhiko P.

Publication type:

Article

The mechanism of filament formation in Ag doped Ge-Se resistive switching cell.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 3, p. 2459, doi. 10.1007/s10854-018-0519-6

By:

Zhang, Bo;
Zima, Vitezslav;
Kutalek, Petr;
Mikysek, Tomas;
Wagner, Tomas

Publication type:

Article

Reduction of leakage current at the SiNx/GaN interface in GaN Schottky diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 22, p. 19353, doi. 10.1007/s10854-018-0064-3

By:

Kolli, Sowmya;
Sunkara, Mahendra;
Alphenaar, Bruce

Publication type:

Article

A Comparison of Pt/Si and Pt3Cu/Si Schottky nano-heterojunctions: enhanced direct methanol energy converter based on non-adiabatic system and molecular adsorption.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 19, p. 16486, doi. 10.1007/s10854-018-9742-4

By:

Chen, Xiang;
Wu, Zhenhua;
Fu, Xuecheng;
Mu, Erzhen;
Wu, Zhimao;
Hu, Zhiyu

Publication type:

Article

An evaluation of structural, optical and electrical characteristics of Ag/ZnO rods/SnO2/In-Ga Schottky diode.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 12, p. 10054, doi. 10.1007/s10854-018-9049-5

By:

Küçükömeroğlu, T.;
Bacaksız, E.;
Yılmaz, S.;
Polat, İ.

Publication type:

Article

Structural, optical and electrical properties of pure and Fe doped V2O5 nanoparticles for junction diode fabrications.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 12, p. 9840, doi. 10.1007/s10854-018-9024-1

By:

Pradeep, I.;
Ranjith Kumar, E.;
Suriyanaranan, N.;
Srinivas, Ch.;
Venkata Rao, N.

Publication type:

Article

Investigation of photovoltaic effect on electric and dielectric properties of Au/n-Si Schottky barrier diodes with nickel (Ni)–zinc (Zn) doped organic interface layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 5, p. 3790, doi. 10.1007/s10854-017-8314-3

By:

Tecimer, H.;
Tunç, T.;
Altındal, Ş.

Publication type:

Article

Impact of Zr content on multiphase zirconium–tungsten oxide (Zr–WOx) films and its MIS structure of Cu/Zr–WOx/p-Si Schottky barrier diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 4, p. 2618, doi. 10.1007/s10854-017-8187-5

By:

Marnadu, R.;
Chandrasekaran, J.;
Raja, M.;
Balaji, M.;
Balasubramani, V.

Publication type:

Article

On the conduction mechanisms of Au/(CuO-CuO-PVA)/n-Si (MPS) Schottky barrier diodes (SBDs) using current-voltage-temperature (I-V-T) characteristics.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 1, p. 159, doi. 10.1007/s10854-017-7900-8

By:

Büyükbaş Uluşan, A.;
Tataroğlu, A.;
Azizian-Kalandaragh, Y.;
Altındal, Ş.

Publication type:

Article

Metal/nonpolar m-plane ZnO contacts with and without thin AlO interlayer deposited by atomic layer deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 20, p. 14974, doi. 10.1007/s10854-017-7370-z

By:

Kim, Hogyoung;
Kim, Dong;
Ryu, Sungyeon;
Choi, Byung

Publication type:

Article

Effect of substrate temperature on electrical properties of (Al/p-CuSbS /Mo) Schottky diodes grown by vacuum thermal evaporation.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 12, p. 8733, doi. 10.1007/s10854-017-6598-y

By:

Nefzi, K.;
Rabhi, A.;
Kanzari, M.

Publication type:

Article

Electrical characteristics of Au/n-Si (MS) Schottky Diodes (SDs) with and without different rates (graphene + CaPrCoO-doped poly(vinyl alcohol)) interfacial layer.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 11, p. 7905, doi. 10.1007/s10854-017-6490-9

By:

Çetinkaya, H.;
Altındal, Ş.;
Orak, I.;
Uslu, I.

Publication type:

Article

Investigation of photo-induced effect on electrical properties of Au/PPy/n-Si (MPS) type schottky barrier diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 9, p. 6413, doi. 10.1007/s10854-016-6326-z

By:

Ersöz, Gülçin;
Yücedağ, İbrahim;
Bayrakdar, Sümeyye;
Altındal, Şemsettin;
Gümüş, Ahmet

Publication type:

Article

Structural and electrical properties of the Al/p-CuZnSnS thin film schottky diode.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 7, p. 5315, doi. 10.1007/s10854-016-6189-3

By:

Touati, R.;
Trabelsi, I.;
Rabeh, M.;
Kanzari, M.

Publication type:

Article

Modified electrical properties and transport mechanism of Ti/p-InP Schottky structure with a polyvinylpyrrolidone (PVP) polymer interlayer.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 6, p. 4847, doi. 10.1007/s10854-016-6131-8

By:

Siva Pratap Reddy, M.;
Sreenu, K.;
Rajagopal Reddy, V.;
Park, Chinho

Publication type:

Article

Frequency dependent C-V and G/ω-V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 6, p. 4951, doi. 10.1007/s10854-016-6147-0

By:

Tan, S.;
Tecimer, H.;
Çiçek, O.;
Altındal, Ş

Publication type:

Article

Temperature dependence of characteristic parameters of the Au/CH/n-Si Schottky barrier diodes (SBDs) in the wide temperature range.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 5, p. 3987, doi. 10.1007/s10854-016-6011-2

By:

Moraki, K.;
Bengi, S.;
Zeyrek, S.;
Bülbül, M.;
Altındal, Ş.

Publication type:

Article

Fabrication of p-type ZnTe NW/In Schottky diodes for high-speed photodetectors.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 2, p. 1720, doi. 10.1007/s10854-016-5718-4

By:

Chang, Yuan;
Wu, Di;
Xu, Tingting;
Shi, Zhifeng;
Tian, Yongtao;
Li, Xinjian

Publication type:

Article

Study of electrical properties of hafnium oxide thin film based metal-insulator-metal capacitors: pre and post metallic annealing.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 12, p. 12527, doi. 10.1007/s10854-016-5783-8

By:

Mangla, O.;
Gupta, V.

Publication type:

Article

Electrical characterizations of Au/ZnO/n-GaAs Schottky diodes under distinct illumination intensities.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 8, p. 8340, doi. 10.1007/s10854-016-4843-4

By:

Tan, S.;
Uslu Tecimer, H.;
Çiçek, O.;
Tecimer, H.;
Orak, İ.;
Altındal, Ş.

Publication type:

Article

IVT measurements of GaN power Schottky diodes with drift layers grown by HVPE on HVPE GaN substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 6, p. 6108, doi. 10.1007/s10854-016-4536-z

By:

Tompkins, R.;
Khan, M.;
Green, R.;
Jones, K.;
Leach, J.

Publication type:

Article

Light induced charge transport property analysis of nanostructured ZnS based Schottky diode.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 6, p. 6325, doi. 10.1007/s10854-016-4567-5

By:

Dey, Arka;
Middya, Somnath;
Jana, Rajkumar;
Das, Mrinmay;
Datta, Joydeep;
Layek, Animesh;
Ray, Partha

Publication type:

Article

Organometallic hybrid perovskites: structural, optical characteristic and application in Schottky diode.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 5, p. 4275, doi. 10.1007/s10854-016-4293-z

By:

Chen, Liang;
Deng, Jinxiang;
Gao, Hongli;
Yang, Qianqian;
Wang, Guisheng;
Kong, Le;
Cui, Min;
Zhang, Zijia

Publication type:

Article

Ultraviolet nano-photodetector based on ZnS:Cl nanoribbon/Au Schottky junctions.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 6, p. 4290, doi. 10.1007/s10854-015-2981-8

By:

Wang, Li;
Ma, Xu;
Chen, Ran;
Yu, Yong-Qiang;
Luo, Lin-Bao

Publication type:

Article

Single Gaussian distribution of barrier height in Al/PS-ZnPc/p-Si type Schottky barrier diode in temperature range of 120-320 K.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 10, p. 4391, doi. 10.1007/s10854-014-2178-6

By:

Sarıyıldız, Asım;
Vural, Özkan;
Evecen, Meryem;
Altındal, Şemsettin

Publication type:

Article

Influence of annealing effects on the electrical and microstructural properties of Se Schottky contacts on n-type GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 5, p. 2379, doi. 10.1007/s10854-014-1891-5

By:

Rajagopal Reddy, V.;
Janardhanam, V.;
Kang, Min-Sung;
Choi, Chel-Jong

Publication type:

Article

Optical, DC and AC electrical investigations of 4-hydroxy coumarin molecule as an organic Schottky diode.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 3, p. 1258, doi. 10.1007/s10854-014-1718-4

By:

Mir, Feroz;
Shakeel u Rehman;
Asokan, K.;
Khan, S.;
Bhat, G.

Publication type:

Article

Barrier inhomogeneities in titanium Schottky contacts formed on argon plasma etched p-type SiGe.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 3, p. 1527, doi. 10.1007/s10854-014-1763-z

By:

Mamor, M.;
Bouziane, K.;
Tirbiyine, A.

Publication type:

Article

Conductivity enhancement of PEDOT:PSS thin film using roll to plate technique and its characterization as a Schottky diode.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 2, p. 1033, doi. 10.1007/s10854-013-1683-3

By:

Zubair, Muhammad;
Duraisamy, Navaneethan;
Choi, Kyung;
Hyun, Myung

Publication type:

Article

Electrical characterization of a pre-ceramic polymer modified Ag/poly(hydridocarbyne)/ p-Si Schottky barrier diode.

Published in:

Journal of Materials Science: Materials in Electronics, 2012, v. 23, n. 12, p. 2282, doi. 10.1007/s10854-012-0819-1

By:

Başman, Necati;
Uzun, Orhan;
Fiat, Songül;
Alkan, Cemil;
Çankaya, Güven

Publication type:

Article

Electrical, structural and morphological characteristics of rapidly annealed Pd/n-InP (100) Schottky structure.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 7, p. 854, doi. 10.1007/s10854-010-0225-5

By:

Ashok Kumar, A.;
Janardhanam, V.;
Rajagopal Reddy, V.

Publication type:

Article

DC accelerated aging behavior of Co-Dy-Nb doped Zn-V-M-based varistors with sintering process.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 4, p. 444, doi. 10.1007/s10854-010-0157-0

By:

Choon-Woo Nahm

Publication type:

Article