Works matching DE "SCHOTTKY barrier diodes"
Results: 1305
The Temperature-Dependent Interface States and the Reverse Current Conduction Mechanism of Single-Crystal ZnO Schottky Diodes.
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- Materials Transactions, 2025, v. 66, n. 2, p. 153, doi. 10.2320/matertrans.MT-M2024131
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Simulation Study on Electrical Performance of a New Composite Terminal Gallium Oxide Schottky Diode.
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- Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 348, doi. 10.16553/j.cnki.issn1000-985x.2024.0179
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A Comprehensive Numerical Analysis of a 2.45 GHz Energy Harvesting Rectenna System and a Proposal for a Figure of Merit for Rectenna Systems †.
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- Electronics (2079-9292), 2025, v. 14, n. 4, p. 716, doi. 10.3390/electronics14040716
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Field deployable trace radioisotope analysis through combined electrochemical and alpha spectroscopy methods.
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- Journal of Radioanalytical & Nuclear Chemistry, 2025, v. 334, n. 2, p. 1681, doi. 10.1007/s10967-024-09942-4
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Electrically Detected Magnetic Resonance Observations of Spin‐Dependent Space‐Charge‐Limited Conduction in Regioregular Poly(3‐Hexylthiophene).
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- Macromolecular Chemistry & Physics, 2018, v. 219, n. 3, p. 1, doi. 10.1002/macp.201700395
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Low-Temperature Processable High-Performance Electrochemically Deposited p-Type Cuprous Oxides Achieved by Incorporating a Small Amount of Antimony.
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- Advanced Functional Materials, 2015, v. 25, n. 32, p. 5214, doi. 10.1002/adfm.201501323
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p-Type Beta-Silver Vanadate Nanoribbons for Nanoelectronic Devices with Tunable Electrical Properties.
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- Advanced Functional Materials, 2014, v. 23, n. 41, p. 5116, doi. 10.1002/adfm.201300413
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Nanoribbon Devices: p-Type Beta-Silver Vanadate Nanoribbons for Nanoelectronic Devices with Tunable Electrical Properties (Adv. Funct. Mater. 41/2013).
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- Advanced Functional Materials, 2014, v. 23, n. 41, p. 5102, doi. 10.1002/adfm.201370209
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Photo-Stable Organic Thin-Film Transistor Utilizing a New Indolocarbazole Derivative for Image Pixel and Logic Applications.
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- Advanced Functional Materials, 2014, v. 24, n. 8, p. 1109, doi. 10.1002/adfm.201301783
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Analysis of junction properties of gold-zinc oxide nanorods-based Schottky diode by means of frequency dependent electrical characterization on textile.
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- Journal of Materials Science, 2014, v. 49, n. 9, p. 3434, doi. 10.1007/s10853-014-8053-2
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Electrical and structural properties of double metal structure Ni/V Schottky contacts on n-InP after rapid thermal process.
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- Journal of Materials Science, 2011, v. 46, n. 2, p. 558, doi. 10.1007/s10853-010-5020-4
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Temperature-dependent barrier height in CdSe Schottky diode.
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- Journal of Materials Science, 2010, v. 45, n. 20, p. 5468, doi. 10.1007/s10853-010-4601-6
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Electrical properties of Schottky diodes based on Carbazole.
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- Journal of Materials Science, 2006, v. 41, n. 8, p. 2417, doi. 10.1007/s10853-006-5078-1
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Electron transport behaviors across single grain boundaries inn-type BaTiO<sub>3</sub>, SrTiO<sub>3</sub> and ZnO.
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- Journal of Materials Science, 2005, v. 40, n. 4, p. 881, doi. 10.1007/s10853-005-6505-4
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Understanding Dislocation and Deformation Structure In Monoclinic Ultrawide Bandgap Semiconductor β-Ga<sub>2</sub>O<sub>3</sub> Under High-Stress.
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- Microscopy & Microanalysis, 2024, v. 30, p. 1, doi. 10.1093/mam/ozae044.069
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Structural and Chemical Inhomogeneity of Interface Underlying Nonideal Electrical Behavior in Au/β-Ga<sub>2</sub>O<sub>3</sub> Contacts.
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- 2023
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- Abstract
Noise in the Mixer Based on Schottky Diode.
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- Fluctuation & Noise Letters, 2017, v. 16, n. 1, p. -1, doi. 10.1142/S0219477517500018
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Investigation of 1/f Noise and Superimposed RTS Noise in Ti-Au/-Type GaAs Schottky Barrier Diodes.
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- Fluctuation & Noise Letters, 2015, v. 14, n. 4, p. -1, doi. 10.1142/S0219477515500418
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1/f Noise in /n-Type Schottky Barrier Diodes.
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- Fluctuation & Noise Letters, 2015, v. 14, n. 3, p. -1, doi. 10.1142/S0219477515500297
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PHYSICAL ORIGINS OF 1/f NOISE IN Si δ-DOPED SCHOTTKY DIODES.
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- Fluctuation & Noise Letters, 2014, v. 13, n. 1, p. 1, doi. 10.1142/S0219477514500035
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ANALYTICAL MODEL OF HIGH-FREQUENCY NOISE OF SCHOTTKY-BARRIER FREQUENCY MULTIPLIERS.
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- Fluctuation & Noise Letters, 2011, v. 10, n. 1, p. 121, doi. 10.1142/S0219477511000442
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An improved SiC SWITCH‐MOS with superior forward performance.
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- IET Power Electronics (Wiley-Blackwell), 2024, v. 17, n. 15, p. 2584, doi. 10.1049/pel2.12808
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A novel 4H‐SiC accumulation mode MOSFET with ultra‐low specific on‐resistance and improved reverse recovery capability.
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- IET Power Electronics (Wiley-Blackwell), 2023, v. 16, n. 14, p. 2369, doi. 10.1049/pel2.12556
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Single‐switch coupled‐inductors‐based high step‐up converter with reduced voltage stress.
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- IET Power Electronics (Wiley-Blackwell), 2023, v. 16, n. 7, p. 1227, doi. 10.1049/pel2.12464
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Hybrid 3.3 kV/450 A half-bridge IGBT power module with SiC Schottky barrier diodes.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 405, doi. 10.1049/iet-pel.2019.0412
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Recent advances and trend of HEV/EVoriented power semiconductors - an overview.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 3, p. 394, doi. 10.1049/iet-pel.2019.0401
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Displacement damage and total ionisation dose effects on 4H-SiC power devices.
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- IET Power Electronics (Wiley-Blackwell), 2019, v. 12, n. 15, p. 1, doi. 10.1049/iet-pel.2019.0049
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Improvement of an electro-thermal model of SiC MPS diodes.
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- IET Power Electronics (Wiley-Blackwell), 2018, v. 11, n. 4, p. 660, doi. 10.1049/iet-pel.2017.0415
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Low-leakage 4H-SiC junction barrier Schottky rectifier with sandwich P-type well.
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- IET Power Electronics (Wiley-Blackwell), 2015, v. 8, n. 5, p. 672, doi. 10.1049/iet-pel.2014.0332
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Influence of SiC Production Temperature on Its Physicochemical Characteristics.
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- Nanosistemi, Nanomateriali, Nanotehnologii, 2020, v. 18, n. 3, p. 669, doi. 10.15407/nnn.18.03.669
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Вплив наноструктуризації кремнію на електричні та фотоелектричні властивості діод Шотткі Ni/n-Si
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- Nanosistemi, Nanomateriali, Nanotehnologii, 2019, v. 17, n. 3, p. 491
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Characterization of Self-driven Cascode-Configuration Synchronous Rectifiers.
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- Transactions of Nanjing University of Aeronautics & Astronautics, 2019, v. 36, n. 6, p. 902, doi. 10.16356/j.1005-1120.2019.06.003
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Schottky Diode Based on a Single Carbon-Nanotube-ZnO Hybrid Tetrapod for Selective Sensing Applications.
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- Advanced Materials Interfaces, 2017, v. 4, n. 19, p. n/a, doi. 10.1002/admi.201700507
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Barrier Height and Tunneling Current in Schottky Diodes with Embedded Layers of Quantum Dots.
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- JETP Letters, 2002, v. 75, n. 2, p. 102, doi. 10.1134/1.1466486
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Anomalous Stark effect on excitonic states in a preionization electric field.
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- JETP Letters, 1996, v. 64, n. 1, p. 42, doi. 10.1134/1.567156
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Influence of a Strong Magnetic Field on the AC Transport Properties of Fe/SiO<sub>2</sub>/n-Si MIS Structure.
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- Journal of Experimental & Theoretical Physics, 2022, v. 135, n. 3, p. 377, doi. 10.1134/S1063776122090102
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The comparison of the methods used for determining of Schottky diode parameters in a wide temperature range.
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- Sakarya University Journal of Science (SAUJS) / Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2017, v. 21, n. 6, p. 1286, doi. 10.16984/saufenbilder.279996
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Frontmatter.
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- Zeitschrift für Physikalische Chemie, 2020, v. 234, n. 2, p. i, doi. 10.1515/zpch-2020-frontmatter1
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- Article
Impact of Phase Transformation in WO<sub>3</sub> Thin Films at Higher Temperature and its Compelling Interfacial Role in Cu/WO<sub>3</sub>/p–Si Structured Schottky Barrier Diodes.
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- Zeitschrift für Physikalische Chemie, 2020, v. 234, n. 2, p. 355, doi. 10.1515/zpch-2018-1289
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Proton irradiation Of Ga<sub>2</sub>O<sub>3</sub> Schottky diodes and NiO/Ga<sub>2</sub>O<sub>3</sub> heterojunctions.
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- Scientific Reports, 2024, v. 12, n. 1, p. 1, doi. 10.1038/s41598-024-78531-y
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Development of a novel self-healing Zn(II)-metallohydrogel with wide bandgap semiconducting properties for non-volatile memory device application.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-61870-1
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The Effects of Surface Oxidation and H-Termination Processes Applied to Si Using Electrolytic Hydrogen Peroxide Solution to The Produced Cu/p-Si Schottky Contact Parameters.
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- Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2024, v. 14, n. 1, p. 182, doi. 10.21597/jist.1239867
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Ti/ p-GaN Schottky Diyotunun Elektriksel Parametrelerinin İncelenmesi.
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- Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2022, v. 12, n. 2, p. 752, doi. 10.21597/jist.1024690
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Investigation of I-V-T Charactersitics of Cr/Indigo Carmine/p-Si/Al Heterojunction Diode.
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- Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2021, v. 11, n. 4, p. 2790, doi. 10.21597/jist.942302
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Voltage Dependent Barrier Height, Ideality Factor and Surface States in Au/(NiS-PVP)/n-Si (MPS) type Schottky Barrier Diodes.
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- Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2021, v. 11, n. 2, p. 1058, doi. 10.21597/jist.810687
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Au/p-Si, Au/PVA/p-Si ve Au/PVA:Gr/p-Si Schottky Bariyer Diyotların Üretimi ve Temel Elektriksel Özelliklerinin İncelenmesi.
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- Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2021, v. 11, n. 1, p. 157, doi. 10.21597/jist.799054
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Determination of Structural Properties of Some Important Polymers Used as Interfacial Layer in Fabrication of Schottky Barrier Diodes (SBDs).
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- Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2020, v. 10, n. 1, p. 225, doi. 10.21597/jist.615541
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Arayüzey Doğal Oksit Tabakalı Al/p-Si/Al Yapıların Dielektrik Karakteristiklerine Ölçüm Frekansının Etkileri.
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- Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2020, v. 10, n. 1, p. 91, doi. 10.21597/jist.612518
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The Investigation of Temperature Dependent Reverse Bias Capacitance-Voltage (C-V) Characteristics of Au/Ppy/N-Si (MPS) Type Schottky Barrier Diodes (Sbds) at 100 Khz and 500 Khz.
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- Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2019, v. 9, n. 4, p. 2062, doi. 10.21597/jist.541435
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Yb/p-Si Schottky Diyotlarının Elektriksel Karakteristiklerinin İncelenmesi.
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- Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2019, v. 9, n. 3, p. 1385, doi. 10.21597/jist.537844
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