Works matching DE "SCHOTTKY barrier diodes"
Results: 1292
Numerical Analysis of Thermal Sensitivity Characteristics by Pinch-Off Model in Inhomogeneous Schottky Barrier Diodes: Numerical Analysis of Thermal Sensitivity Characteristics by Pinch-Off Model in...: A. Turut, H. Efeoǧlu.
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- Journal of Electronic Materials, 2025, v. 54, n. 3, p. 2460, doi. 10.1007/s11664-024-11678-6
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- Article
A Study on Annealing Process Influenced Electrical Properties of Ni/CeO<sub>2</sub>/p‐Si/Al Schottky Barrier Diodes.
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- Macromolecular Symposia, 2021, v. 398, n. 1, p. 1, doi. 10.1002/masy.202000228
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Electrical and optical performances investigation of planar solar blind photodetector based on IZTO/Ga<sub>2</sub>O<sub>3</sub> Schottky diode via TCAD simulation.
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- Optical & Quantum Electronics, 2024, v. 56, n. 4, p. 1, doi. 10.1007/s11082-023-06231-4
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Analysis of distortion reduction in tunnel injection transistor laser using feedback Schottky diode.
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- Optical & Quantum Electronics, 2022, v. 54, n. 6, p. 1, doi. 10.1007/s11082-022-03746-0
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A simple method for fabrication of graphene-silicon Schottky diode for photo-detection applications.
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- Optical & Quantum Electronics, 2015, v. 47, n. 3, p. 613, doi. 10.1007/s11082-014-9937-8
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Understanding Dislocation and Deformation Structure In Monoclinic Ultrawide Bandgap Semiconductor β-Ga<sub>2</sub>O<sub>3</sub> Under High-Stress.
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- Microscopy & Microanalysis, 2024, v. 30, p. 1, doi. 10.1093/mam/ozae044.069
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Structural and Chemical Inhomogeneity of Interface Underlying Nonideal Electrical Behavior in Au/β-Ga<sub>2</sub>O<sub>3</sub> Contacts.
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- 2023
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- Abstract
Power loss model and efficiency analysis of grid-connected seven-switch boost-type photovoltaic current source inverter using two power switches configurations.
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- Electrical Engineering, 2023, v. 105, n. 5, p. 2607, doi. 10.1007/s00202-023-01840-4
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Rotational spectroscopy of methylamine up to 2.6 THz.
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- Astronomy & Astrophysics / Astronomie et Astrophysique, 2014, v. 563, p. 1, doi. 10.1051/0004-6361/201323190
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Ultrafast generation of magnetic fields in a Schottky diode.
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- Nature, 2001, v. 414, n. 6859, p. 51, doi. 10.1038/35102026
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- Article
Influence of the thickness of the base region of structures with a Schottky barrier on their current and photoelectric characteristics.
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- Journal of Engineering Physics & Thermophysics, 2007, v. 80, n. 3, p. 625, doi. 10.1007/s10891-007-0082-0
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- Article
Compact high‐efficiency c‐band rectifier with high input power for microwave power transmission.
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- Electronics Letters (Wiley-Blackwell), 2023, v. 59, n. 8, p. 1, doi. 10.1049/ell2.12776
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- Article
Port‐assignment modelling of anti‐parallel Schottky barrier diode and 0.3‐THz sub‐harmonic mixer design.
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- Electronics Letters (Wiley-Blackwell), 2023, v. 59, n. 2, p. 1, doi. 10.1049/ell2.12724
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- Article
Low-local-oscillator-power sub-harmonic mixing in 300-GHz band by Fermi-level managed barrier diode.
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- Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 24, p. 1326, doi. 10.1049/el.2020.2307
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- Article
Two-region model for harmonic radar transponders.
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- Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 16, p. 835, doi. 10.1049/el.2020.0779
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- Article
Compact terahertz detector based on lightweight 3D-printed lens packaging.
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- Electronics Letters (Wiley-Blackwell), 2019, v. 55, n. 14, p. 796, doi. 10.1049/el.2019.1446
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- Article
340 GHz lens-coupled 4 × 4 GaAs detector array for terahertz imaging applications.
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- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 20, p. 1180, doi. 10.1049/el.2018.5856
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- Article
Low-noise heterodyne detection of terahertz waves at room temperature using zero-biased Fermi-level managed barrier diode.
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- Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 18, p. 1080, doi. 10.1049/el.2018.5879
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- Article
Demonstration of fully vertical GaN-on-Si Schottky diode.
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- Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 24, p. 1610, doi. 10.1049/el.2017.3166
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- Article
in brief.
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- 2017
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- Abstract
Simple and accurate design of GaAs Schottky diode model.
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- Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 13, p. 881, doi. 10.1049/el.2017.1578
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The investigation of the complex dielectric and electric modulus of Al/Mg2 Si/p-Si Schottky diode and its AC electrical conductivity in a wide frequency range.
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- Turkish Journal of Physics, 2021, v. 45, n. 3, p. 159, doi. 10.3906/fiz-2101-17
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- Article
Thermal sensitivity from current-voltage-measurement temperature characteristics in Au/n-GaAs Schottky contacts.
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- Turkish Journal of Physics, 2021, v. 45, n. 5, p. 268, doi. 10.3906/fiz-2108-15
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- Article
On current-voltage and capacitance-voltage characteristics of metal-semiconductor contacts.
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- Turkish Journal of Physics, 2020, v. 44, n. 4, p. 302, doi. 10.3906/fiz-2007-11
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- Article
On differential depletion length of Schottky diodes with copper-nickel alloy metal of front contact.
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- Turkish Journal of Physics, 2018, v. 42, n. 5, p. 587, doi. 10.3906/fiz-1803-6
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- Article
Determination of barrier height temperature coefficient by Norde's method in ideal Co/n-GaAs Schottky contacts.
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- Turkish Journal of Physics, 2012, v. 36, n. 2, p. 235, doi. 10.3906/fiz-1103-8
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- Article
Influence of the nitrogen concentration on the electrical characteristic of hydrogenated amorphous silicon nitride (a-SiN<sub>x</sub>:H) based Schottky diodes.
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- Turkish Journal of Physics, 2010, v. 34, n. 2, p. 83, doi. 10.3906/fiz-0908-42
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- Article
Influence of the nitrogen concentration on the electrical characteristic of hydrogenated amorphous silicon nitride (a-SiN<sub>x</sub>:H) based Schottky diodes.
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- Turkish Journal of Physics, 2010, v. 34, n. 2, p. 83, doi. 10.3906/fiz-0908-42
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- Article
Characterization of Thin Film Al/p-CdTe Schottky Diode.
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- Turkish Journal of Physics, 2008, v. 32, n. 3, p. 151
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Electro-optical trap for dipolar excitons in a GaAs/AlAs Schottky diode with a single quantum well.
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- JETP Letters, 2012, v. 94, n. 11, p. 800, doi. 10.1134/S0021364011230032
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Anomalies of the specific heat near the quantum critical point in Tm<sub>0.74</sub>Yb<sub>0.26</sub>B<sub>12</sub>.
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- JETP Letters, 2010, v. 91, n. 2, p. 75, doi. 10.1134/S0021364010020050
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- Article
Carbon nanotube based bolometer.
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- JETP Letters, 2006, v. 84, n. 5, p. 267, doi. 10.1134/S0021364006170085
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- Article
Design and Technological Optimization of Electrical Parameters of the Wideband Balanced Microwave Frequency Mixer Based on Resonant-Tunneling Diodes.
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- Journal of Communications Technology & Electronics, 2022, v. 67, n. 6, p. 670, doi. 10.1134/S1064226922060079
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Visualizing the Intensity Distribution of a Microwave Field Using a Microstrip Rectenna with a Schottky Diode.
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- Journal of Communications Technology & Electronics, 2019, v. 64, n. 9, p. 1001, doi. 10.1134/S1064226919080102
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Selective UV photodetectors based on the metal-AlGaN Schottky barrier.
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- Journal of Communications Technology & Electronics, 2017, v. 62, n. 9, p. 1074, doi. 10.1134/S1064226917090194
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- Article
Problems of development of a mobile system of remote energy supply of small unmanned aerial vehicles by microwave radiation.
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- Journal of Communications Technology & Electronics, 2017, v. 62, n. 7, p. 731, doi. 10.1134/S1064226917070105
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Equivalent actions of high-power microwave and video pulses with different polarities on semiconductor diode structures.
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- Journal of Communications Technology & Electronics, 2014, v. 59, n. 2, p. 169, doi. 10.1134/S1064226914010094
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- Article
An ultraviolet MSM photodetector with electrically tunable spectral sensitivity.
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- Journal of Communications Technology & Electronics, 2013, v. 58, n. 3, p. 273, doi. 10.1134/S1064226913030029
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- Article
Detection of a random process with the use of a δ-doped Schottky diode.
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- Journal of Communications Technology & Electronics, 2013, v. 58, n. 2, p. 178, doi. 10.1134/S1064226913010063
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- Article
Breakdown Mechanisms of Power Semiconductor Devices.
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- IETE Technical Review, 2019, v. 36, n. 3, p. 243, doi. 10.1080/02564602.2018.1450652
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- Article
Fowler–Nordheim Tunnelling Contribution in AlGaN/GaN on Si (111) Schottky Current.
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- IETE Technical Review, 2016, v. 33, n. 1, p. 7, doi. 10.1080/02564602.2015.1042933
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- Article
Compact high-efficiency energy harvesting positive and negative DC supplies voltage for battery-less CMOS receiver.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-41236-9
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- Article
Machine learning models for efficient characterization of Schottky barrier photodiode internal parameters.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-41111-7
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- Article
Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-40983-z
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Study on transient photocurrent induced by energy level defect of schottky diode irradiated by high power pulsed laser.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-40983-z
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- Publication type:
- Article
Compact high-efficiency energy harvesting positive and negative DC supplies voltage for battery-less CMOS receiver.
- Published in:
- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-41236-9
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- Publication type:
- Article
Machine learning models for efficient characterization of Schottky barrier photodiode internal parameters.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-41111-7
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- Article
The Effects of Surface Oxidation and H-Termination Processes Applied to Si Using Electrolytic Hydrogen Peroxide Solution to The Produced Cu/p-Si Schottky Contact Parameters.
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- Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2024, v. 14, n. 1, p. 182, doi. 10.21597/jist.1239867
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- Article
Ti/ p-GaN Schottky Diyotunun Elektriksel Parametrelerinin İncelenmesi.
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- Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2022, v. 12, n. 2, p. 752, doi. 10.21597/jist.1024690
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- Article
Investigation of I-V-T Charactersitics of Cr/Indigo Carmine/p-Si/Al Heterojunction Diode.
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- Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2021, v. 11, n. 4, p. 2790, doi. 10.21597/jist.942302
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- Article