Works matching DE "SCHOTTKY barrier diodes"

Results: 1343

Advances in Interfacial Engineering and Structural Optimization for Diamond Schottky Barrier Diodes.

Published in:

Materials (1996-1944), 2025, v. 18, n. 15, p. 3657, doi. 10.3390/ma18153657

By:

Lu, Shihao;
Zhang, Xufang;
Wang, Shichao;
Li, Mingkun;
Jiao, Shuopei;
Liang, Yuesong;
Wang, Wei;
Zhang, Jing

Publication type:

Article

High-Performance Metal–Semiconductor (Ag/Si) Schottky Diode Enhanced by Sputtered CdS Thin Film.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 9, p. 7775, doi. 10.1007/s11664-025-12149-2

By:

Pathak, Sakshi;
Shrivastav, Monika;
Chaudhary, Shristi;
Kumar, Chandra;
Kumar, Naveen;
Guzman, Fernando

Publication type:

Article

A New Double Trench SiC MOSFET Integrated Multifunctional Gates for Improved Reverse Conduction Performance.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 9, p. 7740, doi. 10.1007/s11664-025-12135-8

By:

Chen, Weizhong;
Xiao, Yufan;
Zhou, Yangqi;
Han, Zhengsheng;
Wang, Haishi

Publication type:

Article

Effect of Surface Pits in SiC Epitaxial Wafers on JBS Performance.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 9, p. 7752, doi. 10.1007/s11664-025-12117-w

By:

Wang, Chenchen;
Zhao, Xintian;
Zhou, Xun;
Ma, Xiao;
Hu, Xiaolong;
Wang, Hong

Publication type:

Article

Using Highly Functional Cr2O3 Interfacial Layer to Enhance the Electrical Performance of Au/InP Schottky Diodes.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 12, p. 1, doi. 10.1002/aelm.202500050

By:

Krupa, Sreedhar Gari Sai;
Reddy, Dandala Surya;
Lakshmi‐Narayana, Ambadi;
Rajagopal Reddy, Varra;
Ramana, Chintalapalle V.

Publication type:

Article

Arithmetic Logic Unit Circuit Based on Zinc Oxide Nanogap Schottky Diodes.

Published in:

Advanced Electronic Materials, 2025, v. 11, n. 12, p. 1, doi. 10.1002/aelm.202400940

By:

Bizak, Zhanibek;
Mazo‐Mantilla, Harold F.;
Luo, Linqu;
Florica, Camelia;
Melinte, Georgian;
Anthopoulos, Thomas D.;
Salama, Khaled N.

Publication type:

Article

Fabrication of Au/ZnO:Ga-polystyrene nanocomposite Schottky diodes for gamma radiation sensing and detection: impact of Ga dopant content.

Published in:

Journal of Nanoparticle Research, 2025, v. 27, n. 7, p. 1, doi. 10.1007/s11051-025-06386-z

By:

Ameen, Sajjad Ali;
Karim, Mahmood Salim;
Omran Alkhayatt, Adel H.

Publication type:

Article

A novel ultra-steep subthreshold swing iTFET with control gate and control source biasing.

Published in:

Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-025-13011-5

By:

Lin, Jyi-Tsong;
Tu, Ruei-Cheng

Publication type:

Article

Fabrication and Performance Evaluation of Schottky Diode Device Fabricated Utilizing Ultrathin Silver Nanowires-PEDOT:PSS Composite Electrode.

Published in:

JOM: The Journal of The Minerals, Metals & Materials Society (TMS), 2024, v. 76, n. 2, p. 646, doi. 10.1007/s11837-023-06055-3

By:

Mir, Amna;
Iqbal, Muzammil;
Amjad, Um-e-Salma;
Sherin, Lubna;
Mustafa, Maria

Publication type:

Article

Measurement of Bulk Oxygen Diffusivity in (La0.8Sr0.2)0.95MnO3±δ.

Published in:

JOM: The Journal of The Minerals, Metals & Materials Society (TMS), 2019, v. 71, n. 1, p. 96, doi. 10.1007/s11837-018-3099-2

By:

Davis, Jacob;
Pal, Uday;
Gopalan, Srikanth;
Ludwig, Karl;
Basu, Soumendra

Publication type:

Article

Preparation and application of polyaniline nanofibers: an overview.

Published in:

Polymer International, 2018, v. 67, n. 6, p. 650, doi. 10.1002/pi.5562

By:

Wang, Yanmin

Publication type:

Article

Photoelectric properties of Al/In2Se3 Schottky barriers.

Published in:

Journal of Applied Spectroscopy, 2008, v. 75, n. 3, p. 456, doi. 10.1007/s10812-008-9069-7

By:

Bodnar’, I.;
Rud’, V.;
Rud’, Yu.;
Gorbachev, D.

Publication type:

Article

Photoelectric properties of In/ n-CuIn5Se8 Schottky barriers.

Published in:

Journal of Applied Spectroscopy, 2006, v. 73, n. 4, p. 567, doi. 10.1007/s10812-006-0119-8

By:

Bodnar’, 1;
Rud’, V.;
Rud’, Yu.

Publication type:

Article

Electrical Properties of High-Quality Synthetic Boron-Doped Diamond Single Crystals and Schottky Barrier Diodes on Their Basis.

Published in:

Inorganic Materials, 2018, v. 54, n. 15, p. 1469, doi. 10.1134/S0020168518150037

By:

Bormashov, V. S.;
Tarelkin, S. A.;
Buga, S. G.;
Volkov, A. P.;
Golovanov, A. V.;
Kuznetsov, M. S.;
Kornilov, N. V.;
Teteruk, D. V.;
Luparev, N. V.;
Terent'ev, S. A.;
Blank, V. D.

Publication type:

Article

Analysis and modelling of a novel compact rectenna for indoor applications.

Published in:

IET Communications (Wiley-Blackwell), 2014, v. 8, n. 15, p. 2642, doi. 10.1049/iet-com.2014.0275

By:

Yadav, Rakesh Kumar;
Das, Sushrut;
Yadava, Ram Lal

Publication type:

Article

Current‐voltage model of a graphene nanoribbon p‐n junction and Schottky junction diode.

Published in:

IET Circuits, Devices & Systems (Wiley-Blackwell), 2022, v. 16, n. 2, p. 157, doi. 10.1049/cds2.12092

By:

Shamsir, Samira;
Parvin Poly, Laila;
Chakraborty, Rajat;
Subrina, Samia

Publication type:

Article

Impact of Lanthanum on PZT Resistance Degradation.

Published in:

Ferroelectrics, 2008, v. 362, n. 1, p. 123, doi. 10.1080/00150190802006806

By:

Chentir, M. T.;
Bouyssou, E.;
Ventura, L.;
Guégan, G.;
Anceau, C.

Publication type:

Article

Interface Effects of Pb(Zr,Ti)O3 Thin Film Capacitors with Pt, IrO2 and SrRuO3 Top Electrodes.

Published in:

Ferroelectrics, 2007, v. 357, n. 1, p. 276, doi. 10.1080/00150190701545581

By:

Nozaka, Takashi;
Masuda, Yoichiro

Publication type:

Article

Dielectric Characterization of Ba(Fe 1/3 Nb 2/3 )O 3 Perovskite.

Published in:

Ferroelectrics, 2005, v. 323, n. 1, p. 107, doi. 10.1080/00150190500308827

By:

Salvi, S.;
Ranade, A.;
Khandpekar, M.

Publication type:

Article

A 340-400 GHz Zero-Biased Waveguide Detector Using an Self-Consistent Method to Extract the Parameters of Schottky Barrier Diode.

Published in:

Applied Computational Electromagnetics Society Journal, 2015, v. 30, n. 12, p. 1334

By:

Tianhao Ren;
Yong Zhang;
Ruimin Xu;
Jingtao Zhou;
Chengyue Yang;
Zhi Jin

Publication type:

Article

The Role of Hydrostatic Pressure in Electrical Properties of Au/n-GaAs Schottky diodes with Substituted Polyaniline Interfacial Layer.

Published in:

Acta Physica Polonica: A, 2017, v. 132, n. 3, p. 1118, doi. 10.12693/APhysPolA.132.1118

By:

ÖZDEMIR, A. F.;
SALARI, M. ABDOLAHPOUR;
KÖKCE, A.;
UÇAR, N.

Publication type:

Article

Characterization of a Schottky Diode Rectenna for Millimeter Wave Power Beaming Using High Power Radiation Sources.

Published in:

Acta Physica Polonica: A, 2017, v. 131, n. 5, p. 1280, doi. 10.12693/APhysPolA.131.1280

By:

ETINGER, A.;
PILOSSOF, M.;
LITVAK, B.;
HARDON, D.;
EINAT, M.;
KAPILEVICH, B.;
PINHASI, Y.

Publication type:

Article

On the Frequency C-V and G-V Characteristics of Au/Poly (3-Substituted thiophene) (P3DMTFT)/n-GaAs Schottky Barrier Diodes.

Published in:

Acta Physica Polonica: A, 2015, v. 128, n. 2B, p. B-450, doi. 10.12693/APhysPolA.128.B-450

By:

ÖZDEMIR, A. F.;
AKCAN, D. E.;
LAPA, H. E.;
YAVUZ, A. G.;
DUMAN, S.

Publication type:

Article

The Electrical Properties of Au/P3HT/n-GaAs Schottky Barrier Diode.

Published in:

Acta Physica Polonica: A, 2015, v. 128, n. 2B, p. B-170, doi. 10.12693/APhysPolA.128.B-170

By:

KIRSOY, A.;
AHMETOGLU, M.;
ASIMOV, A.;
KUCUR, B.

Publication type:

Article

Photoluminescence in Tilted Magnetic Field of Triply Negatively Charged Excitons Hybridized with a Continuum.

Published in:

Acta Physica Polonica: A, 2013, v. 124, n. 5, p. 798, doi. 10.12693/APhysPolA.124.798

By:

HATTEM, B. VAN;
CORFDIR, P.;
BRERETON, P.;
PEARCE, P.;
GRAHAM, A. M.;
STANLEY, M. J.;
HUGUES, M.;
HOPKINSON, M.;
PHILLIPS, R. T.

Publication type:

Article

Electrical Characterizations of Schottky Diodes on ITO Modified by Aromatic SAMs.

Published in:

Acta Physica Polonica: A, 2013, v. 123, n. 2, p. 456, doi. 10.12693/APhysPolA.123.456

By:

HAVARE, A. K.;
OKUR, S.;
YAGMURCUKARDES, N. T.;
CAN, M.;
AYDIN, H.;
SEKER, M.;
DEMIC, S.

Publication type:

Article

Hydrogen Sensors Made on InP or GaN with Electrophoretically Deposited Pd or Pt Nanoparticles.

Published in:

Acta Physica Polonica: A, 2012, v. 122, n. 3, p. 572, doi. 10.12693/APhysPolA.122.572

By:

Zdansky, K.;
Cernohorsky, O.;
Yatskiv, R.

Publication type:

Article

Electrical and Interfacial Properties of p-Si/P3HT Organic-on-Inorganic Junction Barrier.

Published in:

Acta Physica Polonica: A, 2011, v. 120, n. 3, p. 558, doi. 10.12693/APhysPolA.120.558

By:

Yakuphanoglu, F.;
Shah, M.;
Aslam Farooq, W.

Publication type:

Article

Detector with High Internal Photocurrent Gain Based on ZnO:N.

Published in:

Acta Physica Polonica: A, 2011, v. 119, n. 5, p. 681, doi. 10.12693/APhysPolA.119.681

By:

Kosyachenko, L. A.;
Lashkarev, G. V.;
Ievtushenko, A. I.;
Lazorenko, V. I.;
Sklyarchuk, V. M.;
Sklyarchuk, O. F.

Publication type:

Article

Thin Film ZnO as Sublayer for Electric Contact for Bulk GaN with Low Electron Concentration.

Published in:

Acta Physica Polonica: A, 2011, v. 119, n. 5, p. 672, doi. 10.12693/APhysPolA.119.672

By:

Grzanka, S.;
Łuka, G.;
Krajewski, T. A.;
Guziewicz, E.;
Jachymek, R.;
Purgal, W.;
Wiśniewska, R.;
Sarzyńska, A.;
Bering-Staniszewska, A.;
Godlewski, M.;
Perlin, P.

Publication type:

Article

Capacitance-Voltage Studies of Ti/p-ZnTe Schottky Barrier Structures Containing CdTe Quantum Dots.

Published in:

Acta Physica Polonica: A, 2011, v. 119, n. 5, p. 621, doi. 10.12693/APhysPolA.119.621

By:

Placzek-Popko, E.;
Szatkowski, J.;
Zielony, E.;
Gumienny, Z.;
Dobaczewski, L.;
Karczewski, G.

Publication type:

Article

On the Frequency Domain Relaxation Processes in Gallium Doped CdTe and Cd0:99Mn0:01Te.

Published in:

Acta Physica Polonica: A, 2009, v. 116, n. 5, p. 956, doi. 10.12693/APhysPolA.116.956

By:

Trzmiel, J.;
Placzek-Popko, E.;
Zielony, E.;
Gumienny, Z.

Publication type:

Article

Electrical Characterization of Defects in Schottky Au-CdTe:Ga Diodes.

Published in:

Acta Physica Polonica: A, 2009, v. 116, n. 5, p. 944, doi. 10.12693/APhysPolA.116.944

By:

Dyba, P.;
Płaczek-Popko, E.;
Zielony, E.;
Gumienny, Z.;
Szatkowski, J.

Publication type:

Article

Hole Traps in ZnTe with CdTe Quantum Dots.

Published in:

Acta Physica Polonica: A, 2009, v. 116, n. 5, p. 885, doi. 10.12693/APhysPolA.116.885

By:

Zielony, E.;
Placzek-Popko, E.;
Gumienny, Z.;
Trzmiel, J.;
Karczewski, G.;
Guziewicz, M.

Publication type:

Article

AlGaN/GaN Heterostructure FET - Processing and Parameters Evaluation.

Published in:

Acta Physica Polonica: A, 2009, v. 116, n. 5, p. 800

By:

Boratyński, B.;
Paszkiewicz, B.;
Paszkiewicz, R.;
Tlaczała, M.

Publication type:

Article

An ultraviolet MSM photodetector with electrically tunable spectral sensitivity.

Published in:

Journal of Communications Technology & Electronics, 2013, v. 58, n. 3, p. 273, doi. 10.1134/S1064226913030029

By:

Averin, S.;
Kuznetsov, P.;
Zhitov, V.;
Zakharov, L.;
Alkeev, N.

Publication type:

Article

Detection of a random process with the use of a δ-doped Schottky diode.

Published in:

Journal of Communications Technology & Electronics, 2013, v. 58, n. 2, p. 178, doi. 10.1134/S1064226913010063

By:

Klyuev, A.

Publication type:

Article

Modeling and analysis of schottky diode bridge and JFET based liénard oscillator circuit.

Published in:

Sigma: Journal of Engineering & Natural Sciences / Mühendislik ve Fen Bilimleri Dergisi, 2024, v. 42, n. 2, p. 503, doi. 10.14744/sigma.2022.00082

By:

ÇAKIR, Kübra;
MUTLU, Reşat

Publication type:

Article

Dielectrical parameters and relaxation of Al/NFT/p-Si schottky diode with frequency dependence.

Published in:

Sigma: Journal of Engineering & Natural Sciences / Mühendislik ve Fen Bilimleri Dergisi, 2023, v. 41, n. 1, p. 84, doi. 10.14744/sigma.2023.00009

By:

KARAGÖZ, Emine;
FİAT VAROL, Songül;
SAYIN, Serkan;
MERDAN, Ziya

Publication type:

Article

Wafer-scale radio frequency ZnO Schottky diodes and arithmetic circuits.

Published in:

Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-025-06506-8

By:

Mazo-Mantilla, Harold F.;
Bizak, Zhanibek;
Luo, Linqu;
Faber, Hendrik;
Florica, Camelia;
Mandal, Suman;
Shamim, Atif;
Salama, Khaled N.;
Anthopoulos, Thomas D.

Publication type:

Article

Active charge state control of single NV centres in diamond by in-plane Al-Schottky junctions.

Published in:

Scientific Reports, 2015, p. 12160, doi. 10.1038/srep12160

By:

Schreyvogel, C.;
Polyakov, V.;
Nebel, C. E.;
Wunderlich, R.;
Meijer, J.

Publication type:

Article

Waveform Selectivity at the Same Frequency.

Published in:

Scientific Reports, 2015, p. 9639, doi. 10.1038/srep09639

By:

Wakatsuchi, Hiroki;
Anzai, Daisuke;
Rushton, Jeremiah J.;
Kim, Sanghoon;
Sievenpiper, Daniel F.;
Gao, Fei

Publication type:

Article

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep05951

By:

He Tian;
Zhen Tan;
Can Wu;
Xiaomu Wang;
Mohammad, Mohammad Ali;
Dan Xie;
Yi Yang;
Jing Wang;
Lain-Jong Li;
Jun Xu;
Tian-Ling Ren

Publication type:

Article

Tuned NV emission by in-plane Al-Schottky junctions on hydrogen terminated diamond.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep03634

By:

Schreyvogel, Christoph;
Wolfer, Marco;
Hiromitsu Kato;
Schreck, Matthias;
Nebel, Christoph E.

Publication type:

Article

Fabrication of ZnO nanorods by simplified spray pyrolysis.

Published in:

Bitlis Eren University Journal of Science & Technology, 2011, n. 1-3, p. 1

By:

Aydin, Serdar;
Turgut, Güven;
Yilmaz, Mehmet;
Ertuğrul, Mehmet

Publication type:

Article

Schottky Barrier Height Engineering of Ti/n-Type Silicon Diode by Means of Ion Implantation.

Published in:

Walailak Journal of Science & Technology, 2018, v. 15, n. 11, p. 803, doi. 10.48048/wjst.2018.5968

By:

TANTRAVIWAT, Doldet;
YAMWONG, Wittawat;
TECHAKIJKAJORN, Udom;
IMAI, Kazuo;
INCEESUNGVORN, Burapat

Publication type:

Article

Efficient rectifier with wide input power range for 5G applications.

Published in:

International Journal of Electrical & Computer Engineering (2088-8708), 2024, v. 14, n. 4, p. 3809, doi. 10.11591/ijece.v14i4.pp3809-3819

By:

Ben Yamna, Mounira;
Dakhli, Nabil;
Sakli, Hedi;
Aoun, Mohamed

Publication type:

Article

Improved design and performance of the global rectenna system for wireless power transmission applications around 2.45 GHz.

Published in:

International Journal of Electrical & Computer Engineering (2088-8708), 2024, v. 14, n. 2, p. 1674, doi. 10.11591/ijece.v14i2.pp1674-1682

By:

En-Naghma, Walid;
Halaq, Hanan;
El Ougli, Abdelghani

Publication type:

Article

A 2.45/5.8 GHz high-efficiency dual-band rectifier for low radio frequency input power.

Published in:

International Journal of Electrical & Computer Engineering (2088-8708), 2022, v. 12, n. 3, p. 2169, doi. 10.11591/ijece.v12i3.pp2169-2176

By:

El Mattar, Sara;
Baghdad, Abdennaceur;
Ballouk, Abdelhakim

Publication type:

Article

A new design of a microstrip rectenna at 5.8 GHz for wireless power transmission applications.

Published in:

International Journal of Electrical & Computer Engineering (2088-8708), 2019, v. 9, n. 2, p. 1258, doi. 10.11591/ijece.v9i2.pp1258-1266

By:

Abdellah, Taybi;
Tajmouati, Abdelali;
Zbitou, Jamal;
Errkik, Ahmed;
Latrach, Mohamed

Publication type:

Article