Works matching DE "SCHOTTKY barrier"

Results: 912

Self‐Rectifying Volatile Memristor for Highly Dynamic Functions.

Published in:

Advanced Functional Materials, 2025, v. 35, n. 29, p. 1, doi. 10.1002/adfm.202423880

By:

Ju, Dongyeol;
Noh, Minseo;
Lee, Seungjun;
Kim, Gimun;
Park, Jihee;
Kim, Sungjun

Publication type:

Article

Interfacial properties in edge-contact Borophene/BAs from first-principle study.

Published in:

European Physical Journal B: Condensed Matter, 2025, v. 98, n. 6, p. 1, doi. 10.1140/epjb/s10051-025-00964-9

By:

Ouyang, Xiao;
Liao, Bin;
Bian, Baoan

Publication type:

Article

Barrier-Free Carrier Injection in 2D WSe 2 -MoSe 2 Heterostructures via Fermi-Level Depinning.

Published in:

Nanomaterials (2079-4991), 2025, v. 15, n. 13, p. 1035, doi. 10.3390/nano15131035

By:

Dai, Tian-Jun;
Xiao, Xiang;
Fan, Zhong-Yuan;
Zhang, Zi-Yan;
Zhou, Yi;
Xu, Yong-Chi;
Sun, Jian;
Liu, Xue-Fei

Publication type:

Article

Humidity Sensing in Graphene-Trenched Silicon Junctions via Schottky Barrier Modulation.

Published in:

Nanomaterials (2079-4991), 2025, v. 15, n. 13, p. 985, doi. 10.3390/nano15130985

By:

Qadir, Akeel;
Ali, Munir;
Khaliq, Afshan;
Karim, Shahid;
Farooq, Umar;
Xu, Hongsheng;
Yu, Yiting

Publication type:

Article

Stability of VTH and RON in p‐GaN Schottky‐Gate AlGaN/GaN High‐Electron‐Mobility Transistors under Reverse and Gate Bias Stress: Impact of Gate Offset.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 13, p. 1, doi. 10.1002/pssa.202401012

By:

Feng, Chao;
Liu, Xuan;
Li, Haiyang;
Mao, Danfeng;
Wu, Junye;
Wang, Yuhao;
Du, Rongxin;
Hu, Haolin;
Zeng, Wei;
Wang, Xiaoping;
Zhou, David;
Wan, Yuxi

Publication type:

Article

Investigation and Reduction of Surface Damage of Etched Quasi‐Vertical Gallium Nitride Schottky Diodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 11, p. 1, doi. 10.1002/pssa.202400880

By:

Shu, Qi;
Zhou, Kexin;
Kirchbrücher, Arno;
Kalisch, Holger;
Vescan, Andrei;
Debald, Arne;
Heuken, Michael

Publication type:

Article

Interface trap states induced underestimation of Schottky barrier height in metal-MX2 junctions.

Published in:

NPJ 2D Materials & Applications, 2025, v. 9, n. 1, p. 1, doi. 10.1038/s41699-025-00576-y

By:

Jawa, Himani;
Verreck, Devin;
Sun, Zheng;
Sutar, Surajit;
de la Rosa, Cesar Javier Lockhart;
Kar, Gouri Sankar;
Appenzeller, Joerg

Publication type:

Article

Thermal Grafting of Benzaldehyde for Preparing Catalytically Active Silicon Surface Evaluated by Electrical Methods.

Published in:

Topics in Catalysis, 2025, v. 68, n. 13, p. 1483, doi. 10.1007/s11244-022-01582-w

By:

Mallikarjun, R.;
Mohammedi, Anum;
Kembhavi, Vaishnavi;
Joshi, Rajeev

Publication type:

Article

Analytical Implementation of Electron–Phonon Scattering in a Schottky Barrier CNTFET Model.

Published in:

Journal of Low Power Electronics & Applications, 2025, v. 15, n. 2, p. 28, doi. 10.3390/jlpea15020028

By:

Abdalla, Ibrahim L.;
Matter, Fatma A.;
Afifi, Ahmed A.;
Ibrahem, Mohamed I.;
Hamed, Hesham F. A.;
El-Mokadem, Eslam S.

Publication type:

Article

Photoresponse Characteristics of a Graphene Quantum Dot/GaN Metal–Semiconductor–Metal Ultraviolet Photodetector.

Published in:

Particle & Particle Systems Characterization, 2025, v. 42, n. 1, p. 1, doi. 10.1002/ppsc.202400114

By:

Pandit, Bhishma;
Cho, Jaehee

Publication type:

Article

Strain Modulation in Graphene/ZnO Nanorod Film Schottky Junction for Enhanced Photosensing Performance.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 9, p. 1347, doi. 10.1002/adfm.201503905

By:

Liu, Shuo;
Liao, Qingliang;
Lu, Shengnan;
Zhang, Zheng;
Zhang, Guangjie;
Zhang, Yue

Publication type:

Article

Tuning the Excitonic States in MoS2/Graphene van der Waals Heterostructures via Electrochemical Gating.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 2, p. 293, doi. 10.1002/adfm.201503131

By:

Li, Yang;
Xu, Cheng-Yan;
Qin, Jing-Kai;
Feng, Wei;
Wang, Jia-Ying;
Zhang, Siqi;
Ma, Lai-Peng;
Cao, Jian;
Hu, Ping An;
Ren, Wencai;
Zhen, Liang

Publication type:

Article

How Does Moisture Affect the Physical Property of Memristance for Anionic-Electronic Resistive Switching Memories?

Published in:

Advanced Functional Materials, 2015, v. 25, n. 32, p. 5117, doi. 10.1002/adfm.201501517

By:

Messerschmitt, Felix;
Kubicek, Markus;
Rupp, Jennifer L. M.

Publication type:

Article

A High-Performance Nitro-Explosives Schottky Sensor Boosted by Interface Modulation.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 26, p. 4039, doi. 10.1002/adfm.201501120

By:

Dou, Xincun;
Zu, Baiyi;
Wu, Zhaofeng;
Yang, Zheng;
Guo, Linjuan;
Zhang, Shengli;
Zeng, Haibo

Publication type:

Article

A High-Performance Nitro-Explosives Schottky Sensor Boosted by Interface Modulation.

Published in:

Advanced Functional Materials, 2015, p. 4039, doi. 10.1002/adfm.201501120

By:

Xincun Dou;
Baiyi Zu;
Zhaofeng Wu;
Zheng Yang;
Linjuan Guo;
Shengli Zhang;
Haibo Zeng

Publication type:

Article

Exploiting Memristive BiFeO3 Bilayer Structures for Compact Sequential Logics.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 22, p. 3357, doi. 10.1002/adfm.201303365

By:

You, Tiangui;
Shuai, Yao;
Luo, Wenbo;
Du, Nan;
Bürger, Danilo;
Skorupa, Ilona;
Hübner, René;
Henker, Stephan;
Mayr, Christian;
Schüffny, René;
Mikolajick, Thomas;
Schmidt, Oliver G.;
Schmidt, Heidemarie

Publication type:

Article

Analysis of Influence of Voltage on Potential Barrier on BiCuVOX and BiTiVOX Ceramics.

Published in:

Microscopy & Microanalysis, 2013, v. 19, n. 3, p. 688, doi. 10.1017/S1431927613000160

By:

Gheno, S.M.;
Pimentel, V.L.;
Morelli, M.R.;
Filho, P.I. Paulin

Publication type:

Article

NO2 Gas Sensing Properties of Ag-Functionalized Porous ZnO Sheets.

Published in:

Adsorption Science & Technology, 2023, v. 2023, p. 1, doi. 10.1155/2023/9021169

By:

Kim, Min Young;
Hwang, Jeong Yun;
Mirzaei, Ali;
Choi, Sun-Woo;
Kim, Sang-il;
Kim, Hyun-Sik;
Kim, Sun-Jae;
Roh, Jong Wook;
Choi, Myung Sik;
Lee, Kyu Hyoung;
Lee, Seung Yong;
Jin, Changhyun

Publication type:

Article

NO2 Gas Sensing Properties of Ag-Functionalized Porous ZnO Sheets.

Published in:

Adsorption Science & Technology, 2023, v. 2023, p. 1, doi. 10.1155/2023/9021169

By:

Kim, Min Young;
Hwang, Jeong Yun;
Mirzaei, Ali;
Choi, Sun-Woo;
Kim, Sang-il;
Kim, Hyun-Sik;
Kim, Sun-Jae;
Roh, Jong Wook;
Choi, Myung Sik;
Lee, Kyu Hyoung;
Lee, Seung Yong;
Jin, Changhyun;
Rather, Sami-ullah

Publication type:

Article

晶粒尺寸对多层陶瓷电容器可靠性能的影响与机理.

Published in:

Journal of South China Normal University (Natural Science Edition) / Huanan Shifan Daxue Xuebao (Ziran Kexue Ban), 2024, v. 56, n. 3, p. 1, doi. 10.6054/j.jscnun.2024031

By:

吕烨同;
覃业霞;
王梅;
杨帅俊;
张蕾

Publication type:

Article

Робота виходу електронів і позитронів, бар'єр Шотткі метал-діелектричних сандвічей. Метод Рітца

Published in:

Metallophysics & Advanced Technologies / Metallofizika i Novejsie Tehnologii, 2022, v. 44, n. 3, p. 297, doi. 10.15407/mfint.44.03.0297

By:

Погосов, В. В.;
Рева, В. І.

Publication type:

Article

自己集積化した BaTiO3/ポリフッ化ビニリデンコンポジットの材料組織と α‐β 相転移.

Published in:

Journal of the Japan Society of Powder & Powder Metallurgy / Funtai Oyobi Fummatsu Yakin, 2022, v. 69, n. 5, p. 195, doi. 10.2497/jjspm.69.195

By:

山崎陽菜;
武田真理子;
髙木優香;
永田肇;
阿部聡子;
打越哲郎;
宗像文男

Publication type:

Article

Low Saturation Voltage and High Stability in Dual-Mode Schottky Barrier TFTs Using Bilayer IGZO.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 7, p. 1380, doi. 10.3390/electronics14071380

By:

Huang, Yi;
Liang, Xiaoci;
Zhang, Li;
Wang, Mengye;
Wang, Tianyue;
Liu, Chuan

Publication type:

Article

Optimization of Cross-Bridge Kelvin Resistor (CBKR) Layout for the Precise Contact Resistance Measurement of TiSi 2 /n + Si.

Published in:

Electronics (2079-9292), 2025, v. 14, n. 4, p. 762, doi. 10.3390/electronics14040762

By:

Noh, Hyungju;
Chae, Changmin;
Jeon, Yelim;
Oh, Dongseok;
Kim, Sangwan

Publication type:

Article

6.5 kV SiC PiN and JBS Diodes' Comparison in Hybrid and Full SiC Switch Topologies.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 22, p. 4548, doi. 10.3390/electronics13224548

By:

Spejo, Lucas Barroso;
Knoll, Lars;
Minamisawa, Renato Amaral

Publication type:

Article

Design and Optimization of High Performance Multi-Step Separated Trench 4H-SiC JBS Diode.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 21, p. 4143, doi. 10.3390/electronics13214143

By:

Li, Jinlan;
Wu, Ziheng;
Sheng, Huaren;
Xu, Yan;
Zhou, Liming

Publication type:

Article

Electronic Barriers Behavioral Analysis of a Schottky Diode Structure Featuring Two-Dimensional MoS 2.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 20, p. 4008, doi. 10.3390/electronics13204008

By:

Martínez-Angeles, Wendy Liliana;
González-Reynoso, Orfil;
Carbajal-Arizaga, Gregorio Guadalupe;
García-Ramírez, Mario Alberto

Publication type:

Article

Schottky Barrier Formation Mechanism and Thermal Stability in Au-Free Cu/Metal–Silicide Contacts to GaN-Cap/AlGaN/AlN-Spacer/GaN-on-Si Heterostructure.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 17, p. 3429, doi. 10.3390/electronics13173429

By:

Wzorek, Marek;
Ekielski, Marek;
Piskorski, Krzysztof;
Tarenko, Jarosław;
Borysiewicz, Michał A.;
Brzozowski, Ernest;
Taube, Andrzej

Publication type:

Article

Comparative Study on Schottky Contact Behaviors between Ga- and N-Polar GaN with SiN x Interlayer.

Published in:

Electronics (2079-9292), 2024, v. 13, n. 9, p. 1679, doi. 10.3390/electronics13091679

By:

Yu, Zhehan;
Dai, Yijun;
Tang, Ke;
Luo, Tian;
Qi, Shengli;
Singh, Smriti;
Huang, Lu;
Ye, Jichun;
Sarkar, Biplab;
Guo, Wei

Publication type:

Article

Recent Research for HZO-Based Ferroelectric Memory towards In-Memory Computing Applications.

Published in:

Electronics (2079-9292), 2023, v. 12, n. 10, p. 2297, doi. 10.3390/electronics12102297

By:

Yoo, Jaewook;
Song, Hyeonjun;
Lee, Hongseung;
Lim, Seongbin;
Kim, Soyeon;
Heo, Keun;
Bae, Hagyoul

Publication type:

Article

Understanding and Controlling Band Alignment at the Metal/Germanium Interface for Future Electric Devices.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 15, p. 2419, doi. 10.3390/electronics11152419

By:

Nishimura, Tomonori

Publication type:

Article

Design Space of GaN Vertical Trench Junction Barrier Schottky Diodes: Comprehensive Study and Analytical Modeling.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 13, p. N.PAG, doi. 10.3390/electronics11131972

By:

Yin, Jian;
Chen, Sihao;
Chen, Hang;
Li, Shuti;
Fu, Houqiang;
Liu, Chao

Publication type:

Article

Investigation of Electrical Contacts to p-Grid in SiC Power Devices Based on Charge Storage Effect and Dynamic Degradation.

Published in:

Electronics (2079-9292), 2020, v. 9, n. 10, p. 1723, doi. 10.3390/electronics9101723

By:

Zhang, Meng;
Li, Baikui;
Hua, Mengyuan;
Wei, Jin

Publication type:

Article

Investigation on Temperature Dependency of Recessed-Channel Reconfigurable Field-Effect Transistor.

Published in:

Electronics (2079-9292), 2019, v. 8, n. 10, p. 1124, doi. 10.3390/electronics8101124

By:

Kim, Jang Hyun;
Kim, Sangwan

Publication type:

Article

Control of the Boundary between the Gradual and Abrupt Modulation of Resistance in the Schottky Barrier Tunneling-Modulated Amorphous Indium-Gallium-Zinc-Oxide Memristors for Neuromorphic Computing.

Published in:

Electronics (2079-9292), 2019, v. 8, n. 10, p. 1087, doi. 10.3390/electronics8101087

By:

Jang, Jun Tae;
Ahn, Geumho;
Choi, Sung-Jin;
Kim, Dong Myong;
Kim, Dae Hwan

Publication type:

Article

Long-lived photoexcitation probed by photo-induced enhanced Raman spectroscopy: unveiling charge dynamics in Ag–TiO2 nano-heterojunctions.

Published in:

Scientific Reports, 2025, v. 15, n. 1, p. 1, doi. 10.1038/s41598-025-89110-0

By:

Pięta, Łukasz;
Kisielewska, Aneta;
Warzybok, Adrian;
Piwoński, Ireneusz;
Malek, Kamilla

Publication type:

Article

Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep07293

By:

Leiqiang Chu;
Schmidt, Hennrik;
Jiang Pu;
Shunfeng Wang;
ö zyilmaz, Barbaros;
Taishi Takenobu;
Eda, Goki

Publication type:

Article

Random sized plasmonic nanoantennas on Silicon for low-cost broad-band near-infrared photodetection.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep07103

By:

Amin Nazirzadeh, Mohammad;
Bilge Atar, Fatih;
Berkan Turgut, Berk;
Kemal Okyay, Ali

Publication type:

Article

Controllable Schottky Barriers between MoS2 and Permalloy.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep06928

By:

Weiyi Wang;
Yanwen Liu;
Lei Tang;
Yibo Jin;
Tongtong Zhao;
Faxian Xiu

Publication type:

Article

Tandem-structured, hot electron based photovoltaic cell with double Schottky barriers.

Published in:

Scientific Reports, 2014, p. 1, doi. 10.1038/srep04580

By:

Young Keun Lee;
Hyosun Lee;
Jeong Young Park

Publication type:

Article

Efficient Spin Injection into Silicon and the Role of the Schottky Barrier.

Published in:

Scientific Reports, 2013, p. 1, doi. 10.1038/srep03196

By:

Dankert, André;
Dulal, Ravi S.;
Dash, Saroj P.

Publication type:

Article

Molecular beam epitaxial In2Te3 electronic devices.

Published in:

NPG Asia Materials, 2024, v. 16, n. 1, p. 1, doi. 10.1038/s41427-024-00578-0

By:

Kim, Imhwan;
Ryu, Jinseok;
Lee, Eunsu;
Lee, Sangmin;
Lee, Seokje;
Suh, Wonwoo;
Lee, Jamin;
Kim, Miyoung;
Oh, Hong seok;
Yi, Gyu-Chul

Publication type:

Article

Approaching barrier-free contacts to monolayer MoS2 employing [Co/Pt] multilayer electrodes.

Published in:

NPG Asia Materials, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41427-021-00284-1

By:

Gupta, S.;
Rortais, F.;
Ohshima, R.;
Ando, Y.;
Endo, T.;
Miyata, Y.;
Shiraishi, M.

Publication type:

Article

Improvement of the Physical and Technical Characteristics of the Thin-Film Solar Cells under their Modification by the Plasmonic Nanoparticles.

Published in:

Journal of Nano- & Electronic Physics, 2025, v. 17, n. 1, p. 01013-1, doi. 10.21272/jnep.17(1).01013

By:

Korotun, A. V.;
Shylo, S. I.;
Reva, V. I.;
Titov, I. M.

Publication type:

Article

Modern Photoactive Nanocomposites Based on TiO2 and CeO2.

Published in:

Journal of Nano- & Electronic Physics, 2023, v. 15, n. 4, p. 1, doi. 10.21272/jnep.15(4).04001

By:

Zahornyi, M. M.;
Lavrynenko, O. M.;
Kolomys, O. F.;
Strelchuk, V. V.;
Tyschenko, N. I.;
Korniіenko, O. A.;
Ievtushenko, A. I.

Publication type:

Article

Effect of Porous GaAs Layer Morphology on Pd/porous GaAs Schottky Contactg.

Published in:

Journal of Nano- & Electronic Physics, 2019, v. 11, n. 5, p. 1, doi. 10.21272/jnep.11(5).05007

By:

Oksanich, A. P.;
Pritchin, S. E.;
Kogdas, M. G.;
Kholod, A. G.;
Shevchenko, I. V.

Publication type:

Article

Modeling of Schottky Barrier Height and Volt-Amper Characteristics for Transition Metal-solid Solution (SіC)1 - x(AlN)x.

Published in:

Journal of Nano- & Electronic Physics, 2016, v. 8, n. 4, p. 1, doi. 10.21272/jnep.8(4(1)).04003

By:

Altukhov, V. I.;
Bilalov, B. A.;
Sankin, A. V.;
Filipova, S. V.

Publication type:

Article

Analysis of the Inhomogeneous Barrier in In/p-Si Schottky Contact and Modified Richardson Plot.

Published in:

Journal of Nano- & Electronic Physics, 2016, v. 8, n. 2, p. 1, doi. 10.21272/jnep.8(2).02006

By:

Dhimmar, J. M.;
Desai, H. N.;
Modi, B. P.

Publication type:

Article

Cover: Journal of the Chinese Chemical Society 03/2025.

Published in:: Journal of the Chinese Chemical Society, 2025, v. 72, n. 3, p. 239, doi. 10.1002/jccs.70006
Publication type:: Article

Optimizing Forward Drop and Reverse Leakage Trade‐Off in AlGaN/GaN Lateral Diode with Schottky‐Metal‐Insulator‐Semiconductor Cascode Anode.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2025, v. 222, n. 3, p. 1, doi. 10.1002/pssa.202400338

By:

Wang, Fangzhou;
Gao, Changhong;
Ding, Guojian;
Yu, Cheng;
Wang, Zhuocheng;
Wang, Xiaohui;
Feng, Qi;
Yu, Ping;
Zuo, Peng;
Wang, Yang;
Chen, Wanjun;
Jia, Haiqiang;
Zhang, Bo;
Chen, Hong;
Wang, Zeheng

Publication type:

Article