Works matching DE "SCHOTTKY barrier"
Results: 856
The Temperature-Dependent Interface States and the Reverse Current Conduction Mechanism of Single-Crystal ZnO Schottky Diodes.
- Published in:
- Materials Transactions, 2025, v. 66, n. 2, p. 153, doi. 10.2320/matertrans.MT-M2024131
- By:
- Publication type:
- Article
Influences of Ga<sup>3+</sup> doping content on microstructure and interfacial polarization in colossal permittivity Ga<sub>y</sub>Nb<sub>0.025</sub>Ti<sub>0.975-y</sub>O<sub>2</sub> ceramics.
- Published in:
- International Journal of Smart & Nano Materials, 2025, v. 16, n. 1, p. 84, doi. 10.1080/19475411.2025.2464574
- By:
- Publication type:
- Article
Performance Optimization Study of Ga<sub>2</sub>O<sub>3</sub>/NiO<sub>x</sub> Schottky Barrier Diodes.
- Published in:
- Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 337, doi. 10.16553/j.cnki.issn1000-985x.2024.0294
- By:
- Publication type:
- Article
Bi 4 Ti 3 O 12 -V/Ag Composite with Oxygen Vacancies and Schottky Barrier with Photothermal Effect for Boosting Nizatidine Degradation.
- Published in:
- Catalysts (2073-4344), 2025, v. 15, n. 2, p. 117, doi. 10.3390/catal15020117
- By:
- Publication type:
- Article
Optimization of Cross-Bridge Kelvin Resistor (CBKR) Layout for the Precise Contact Resistance Measurement of TiSi 2 /n + Si.
- Published in:
- Electronics (2079-9292), 2025, v. 14, n. 4, p. 762, doi. 10.3390/electronics14040762
- By:
- Publication type:
- Article
N=8 Armchair Graphene Nanoribbons: Solution Synthesis and High Charge Carrier Mobility**.
- Published in:
- Angewandte Chemie, 2023, v. 135, n. 46, p. 1, doi. 10.1002/ange.202312610
- By:
- Publication type:
- Article
Defect Pyrochlore‐Type Mott–Schottky Photocatalysts for Enhanced Ammonia Synthesis at Low Pressure.
- Published in:
- Angewandte Chemie, 2023, v. 135, n. 26, p. 1, doi. 10.1002/ange.202303629
- By:
- Publication type:
- Article
Optimizing Pt Electronic States through Formation of a Schottky Junction on Non‐reducible Metal–Organic Frameworks for Enhanced Photocatalysis.
- Published in:
- Angewandte Chemie, 2022, v. 134, n. 32, p. 1, doi. 10.1002/ange.202206108
- By:
- Publication type:
- Article
Schottky Barrier‐Induced Surface Electric Field Boosts Universal Reduction of NO<sub>x</sub><sup>−</sup> in Water to Ammonia.
- Published in:
- Angewandte Chemie, 2021, v. 133, n. 38, p. 20879, doi. 10.1002/ange.202107858
- By:
- Publication type:
- Article
Continuous Tuning of Au–Cu<sub>2</sub>O Janus Nanostructures for Efficient Charge Separation.
- Published in:
- Angewandte Chemie, 2020, v. 132, n. 49, p. 22430, doi. 10.1002/ange.202010613
- By:
- Publication type:
- Article
How Does Moisture Affect the Physical Property of Memristance for Anionic-Electronic Resistive Switching Memories?
- Published in:
- Advanced Functional Materials, 2015, v. 25, n. 32, p. 5117, doi. 10.1002/adfm.201501517
- By:
- Publication type:
- Article
A High-Performance Nitro-Explosives Schottky Sensor Boosted by Interface Modulation.
- Published in:
- Advanced Functional Materials, 2015, v. 25, n. 26, p. 4039, doi. 10.1002/adfm.201501120
- By:
- Publication type:
- Article
A High-Performance Nitro-Explosives Schottky Sensor Boosted by Interface Modulation.
- Published in:
- Advanced Functional Materials, 2015, p. 4039, doi. 10.1002/adfm.201501120
- By:
- Publication type:
- Article
Exploiting Memristive BiFeO<sub>3</sub> Bilayer Structures for Compact Sequential Logics.
- Published in:
- Advanced Functional Materials, 2014, v. 24, n. 22, p. 3357, doi. 10.1002/adfm.201303365
- By:
- Publication type:
- Article
The effect of fast annealing treatment on the interface structure and electrical properties of Au/HgInTe contact.
- Published in:
- Journal of Materials Science, 2014, v. 49, n. 18, p. 6160, doi. 10.1007/s10853-014-8324-y
- By:
- Publication type:
- Article
Schottky barrier versus surface ferroelectric depolarization at Cu/Pb(Zr, Ti)O interfaces.
- Published in:
- Journal of Materials Science, 2014, v. 49, n. 9, p. 3337, doi. 10.1007/s10853-014-8041-6
- By:
- Publication type:
- Article
Schottky barrier memory based on heterojunction bandgap engineering for high-density and low-power retention.
- Published in:
- Discover Nano, 2024, v. 19, n. 1, p. 1, doi. 10.1186/s11671-024-04106-5
- By:
- Publication type:
- Article
FS-iTFET: advancing tunnel FET technology with Schottky-inductive source and GAA design.
- Published in:
- Discover Nano, 2024, p. 1, doi. 10.1186/s11671-024-04096-4
- By:
- Publication type:
- Article
Multilayer WS<sub>2</sub> for low-power visible and near-infrared phototransistors.
- Published in:
- Discover Nano, 2024, v. 19, n. 1, p. 1, doi. 10.1186/s11671-024-04000-0
- By:
- Publication type:
- Article
Schottky barrier height engineering on MoS2 field-effect transistors using a polymer surface modifier on a contact electrode.
- Published in:
- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03855-z
- By:
- Publication type:
- Article
A complementary low-Schottky-barrier S/D-based nanoscale dopingless bidirectional reconfigurable field effect transistor with an improved forward current.
- Published in:
- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03835-3
- By:
- Publication type:
- Article
Concurrent Thermal Reduction and Boron-Doped Graphene Oxide by Metal–Organic Chemical Vapor Deposition for Ultraviolet Sensing Application.
- Published in:
- Applied Nano, 2024, v. 5, n. 1, p. 1, doi. 10.3390/applnano5010001
- By:
- Publication type:
- Article
Application of Ag/ZnO composite materials in nitrogen photofixation: Constructing Schottky barrier to realized effective charge carrier separation.
- Published in:
- Precious Metals / Guijinshu, 2021, v. 42, n. 4, p. 47
- By:
- Publication type:
- Article
A novel SiC trench MOSFET with integrated Schottky barrier diode for improved reverse recovery charge and switching loss.
- Published in:
- IET Power Electronics (Wiley-Blackwell), 2021, v. 14, n. 11, p. 2021, doi. 10.1049/pel2.12169
- By:
- Publication type:
- Article
1.4 kV Junction barrier Schottky rectifier with mixed trench structure.
- Published in:
- IET Power Electronics (Wiley-Blackwell), 2014, v. 7, n. 10, p. 2594, doi. 10.1049/iet-pel.2013.0919
- By:
- Publication type:
- Article
Improved trench MOS barrier Schottky rectifier by dielectric engineering.
- Published in:
- IET Power Electronics (Wiley-Blackwell), 2014, v. 7, n. 2, p. 325, doi. 10.1049/iet-pel.2013.0173
- By:
- Publication type:
- Article
Impedance tuning with photoconductors to 40 GHz.
- Published in:
- IET Optoelectronics (Wiley-Blackwell), 2019, v. 13, n. 4, p. 1, doi. 10.1049/iet-opt.2018.5102
- By:
- Publication type:
- Article
All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts.
- Published in:
- NPJ 2D Materials & Applications, 2024, v. 8, n. 1, p. 1, doi. 10.1038/s41699-024-00489-2
- By:
- Publication type:
- Article
Evidence of contact-induced variability in industrially-fabricated highly-scaled MoS<sub>2</sub> FETs.
- Published in:
- NPJ 2D Materials & Applications, 2024, v. 8, n. 1, p. 1, doi. 10.1038/s41699-024-00482-9
- By:
- Publication type:
- Article
CVD graphene contacts for lateral heterostructure MoS2 field effect transistors.
- Published in:
- NPJ 2D Materials & Applications, 2024, v. 8, n. 1, p. 1, doi. 10.1038/s41699-024-00471-y
- By:
- Publication type:
- Article
Fundamentals of low-resistive 2D-semiconductor metal contacts: an ab-initio NEGF study.
- Published in:
- NPJ 2D Materials & Applications, 2023, v. 7, n. 1, p. 1, doi. 10.1038/s41699-023-00402-3
- By:
- Publication type:
- Article
The importance of the image forces and dielectric environment in modeling contacts to two-dimensional materials.
- Published in:
- NPJ 2D Materials & Applications, 2023, v. 7, n. 1, p. 1, doi. 10.1038/s41699-023-00372-6
- By:
- Publication type:
- Article
Layer-dependent Schottky contact at van der Waals interfaces: V-doped WSe<sub>2</sub> on graphene.
- Published in:
- NPJ 2D Materials & Applications, 2022, v. 6, n. 1, p. 1, doi. 10.1038/s41699-022-00342-4
- By:
- Publication type:
- Article
The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors.
- Published in:
- NPJ 2D Materials & Applications, 2021, v. 5, n. 1, p. 1, doi. 10.1038/s41699-020-00194-w
- By:
- Publication type:
- Article
Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing.
- Published in:
- NPJ 2D Materials & Applications, 2021, v. 5, n. 1, p. 1, doi. 10.1038/s41699-020-00190-0
- By:
- Publication type:
- Article
Titanium disulfide as Schottky/ohmic contact for monolayer molybdenum disulfide.
- Published in:
- NPJ 2D Materials & Applications, 2020, v. 4, n. 1, p. 1, doi. 10.1038/s41699-020-00161-5
- By:
- Publication type:
- Article
Effect of Si-Based Anode Lithiation on Charging Characteristics of All-Solid-State Lithium-Ion Battery.
- Published in:
- Batteries, 2022, v. 8, n. 8, p. N.PAG, doi. 10.3390/batteries8080087
- By:
- Publication type:
- Article
Electronic fingerprint mechanism of NO<sub>x</sub> sensor based on single-material SnP<sub>3</sub> logical junction.
- Published in:
- NPJ Computational Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1038/s41524-022-00903-7
- By:
- Publication type:
- Article
An improved space charge distribution analytical model to assess field-effect transistor's intrinsic capacitors.
- Published in:
- Turkish Journal of Electrical Engineering & Computer Sciences, 2019, v. 27, n. 6, p. 4502, doi. 10.3906/elk-1810-43
- By:
- Publication type:
- Article
2D InSe Self‐Powered Schottky Photodetector with the Same Metal in Asymmetric Contacts.
- Published in:
- Advanced Materials Interfaces, 2022, v. 9, n. 35, p. 1, doi. 10.1002/admi.202200075
- By:
- Publication type:
- Article
Survey of Tetragonal Transition Metal Chalcogenide Hetero‐Bilayers for Promising Photocatalysts.
- Published in:
- Advanced Materials Interfaces, 2022, v. 9, n. 10, p. 1, doi. 10.1002/admi.202102334
- By:
- Publication type:
- Article
Survey of Tetragonal Transition Metal Chalcogenide Hetero‐Bilayers for Promising Photocatalysts.
- Published in:
- Advanced Materials Interfaces, 2022, v. 9, n. 10, p. 1, doi. 10.1002/admi.202102334
- By:
- Publication type:
- Article
MXene/TMD Nanohybrid for the Development of Smart Electronic Textiles Based on Physical Electromechanical Sensors.
- Published in:
- Advanced Materials Interfaces, 2022, v. 9, n. 4, p. 1, doi. 10.1002/admi.202101687
- By:
- Publication type:
- Article
Development of Ti<sub>3</sub>C<sub>2</sub>T<sub>x</sub>/NiSe<sub>2</sub> Nanohybrid‐Based Large‐Area Pressure Sensors as a Smart Bed for Unobtrusive Sleep Monitoring.
- Published in:
- Advanced Materials Interfaces, 2021, v. 8, n. 18, p. 1, doi. 10.1002/admi.202100706
- By:
- Publication type:
- Article
Enhanced Electrical Performance of Van der Waals Heterostructure.
- Published in:
- Advanced Materials Interfaces, 2021, v. 8, n. 6, p. 1, doi. 10.1002/admi.202001850
- By:
- Publication type:
- Article
Graphene/MoS<sub>2</sub>/Graphene Vertical Heterostructure‐Based Broadband Photodetector with High Performance.
- Published in:
- Advanced Materials Interfaces, 2021, v. 8, n. 3, p. 1, doi. 10.1002/admi.202001730
- By:
- Publication type:
- Article
Self‐Powered and Broadband Photodetector Based on SnS<sub>2</sub>/ZnO<sub>1−</sub><sub>x</sub>S<sub>x</sub> Heterojunction.
- Published in:
- Advanced Materials Interfaces, 2020, v. 7, n. 20, p. 1, doi. 10.1002/admi.202000882
- By:
- Publication type:
- Article
Ultrathin MoO<sub>x</sub>/Graphene Hybrid Field Effect Transistor Sensors Prepared Simply by a Shadow Mask Approach for Selective ppb‐Level NH<sub>3</sub> Sensing with Simultaneous Superior Response and Fast Recovery.
- Published in:
- Advanced Materials Interfaces, 2020, v. 7, n. 10, p. 1, doi. 10.1002/admi.201902002
- By:
- Publication type:
- Article
Interfacing Low‐Temperature Atomic Layer Deposited TiO<sub>2</sub> Electron Transport Layers with Metal Electrodes.
- Published in:
- Advanced Materials Interfaces, 2020, v. 7, n. 8, p. 1, doi. 10.1002/admi.201902054
- By:
- Publication type:
- Article
Room Temperature Detection of NO<sub>2</sub> at ppb Level and Full Recovery by Effective Modulation of the Barrier Height for Titanium Oxide/Graphene Schottky Heterojunctions.
- Published in:
- Advanced Materials Interfaces, 2019, v. 6, n. 22, p. N.PAG, doi. 10.1002/admi.201900992
- By:
- Publication type:
- Article