Works matching DE "SCHOTTKY barrier"

Results: 888

3.3 kV급 실리콘 카바이드 접합 장벽 쇼트키 다이오드용 접합 종료 확장과 P+ 가드링의 최적화.

Published in:

Journal of the Korea Institute of Information & Communication Engineering, 2025, v. 29, n. 4, p. 502, doi. 10.6109/jkiice.2025.29.4.502

By:

김선구;
유윤섭

Publication type:

Article

Uncovering the doping mechanism of nitric oxide in high-performance P-type WSe2 transistors.

Published in:

Nature Communications, 2025, v. 16, n. 1, p. 1, doi. 10.1038/s41467-025-59423-9

By:

Lan, Hao-Yu;
Lin, Chih-Pin;
Liu, Lina;
Cai, Jun;
Sun, Zheng;
Wu, Peng;
Tan, Yuanqiu;
Yang, Shao-Heng;
Hou, Tuo-Hung;
Appenzeller, Joerg;
Chen, Zhihong

Publication type:

Article

Luminescence in Zinc Selenide Doped with Sn and (Sn, Dy) Phosphors.

Published in:

Macromolecular Symposia, 2024, v. 413, n. 1, p. 1, doi. 10.1002/masy.202300111

By:

Mishra, Ajai K.;
Mishra, Pragati;
Pandey, Janardan Prasad

Publication type:

Article

A Study on Annealing Process Influenced Electrical Properties of Ni/CeO2/p‐Si/Al Schottky Barrier Diodes.

Published in:

Macromolecular Symposia, 2021, v. 398, n. 1, p. 1, doi. 10.1002/masy.202000228

By:

Nallabala, Nanda Kumar Reddy;
Kummara, Venkata Krishnaiah;
Chinnappa, Yuvaraj;
George, P. P.;
Manjunath, V.;
Sanniboina, Jagadeesh;
Reddy, S. Manikanteswara;
Gangasani, Nethaji Reddy

Publication type:

Article

Large-Area Schottky Barrier Transistors Based on Vertically Stacked Graphene-Metal Oxide Heterostructures.

Published in:

Advanced Functional Materials, 2017, v. 27, n. 30, p. 1, doi. 10.1002/adfm.201700651

By:

Kim, Seongchan;
Choi, Young Jin;
Choi, Yongsuk;
Kang, Moon Sung;
Cho, Jeong Ho

Publication type:

Article

Strain Modulation in Graphene/ZnO Nanorod Film Schottky Junction for Enhanced Photosensing Performance.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 9, p. 1347, doi. 10.1002/adfm.201503905

By:

Liu, Shuo;
Liao, Qingliang;
Lu, Shengnan;
Zhang, Zheng;
Zhang, Guangjie;
Zhang, Yue

Publication type:

Article

Tuning the Excitonic States in MoS2/Graphene van der Waals Heterostructures via Electrochemical Gating.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 2, p. 293, doi. 10.1002/adfm.201503131

By:

Li, Yang;
Xu, Cheng-Yan;
Qin, Jing-Kai;
Feng, Wei;
Wang, Jia-Ying;
Zhang, Siqi;
Ma, Lai-Peng;
Cao, Jian;
Hu, Ping An;
Ren, Wencai;
Zhen, Liang

Publication type:

Article

How Does Moisture Affect the Physical Property of Memristance for Anionic-Electronic Resistive Switching Memories?

Published in:

Advanced Functional Materials, 2015, v. 25, n. 32, p. 5117, doi. 10.1002/adfm.201501517

By:

Messerschmitt, Felix;
Kubicek, Markus;
Rupp, Jennifer L. M.

Publication type:

Article

A High-Performance Nitro-Explosives Schottky Sensor Boosted by Interface Modulation.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 26, p. 4039, doi. 10.1002/adfm.201501120

By:

Dou, Xincun;
Zu, Baiyi;
Wu, Zhaofeng;
Yang, Zheng;
Guo, Linjuan;
Zhang, Shengli;
Zeng, Haibo

Publication type:

Article

A High-Performance Nitro-Explosives Schottky Sensor Boosted by Interface Modulation.

Published in:

Advanced Functional Materials, 2015, p. 4039, doi. 10.1002/adfm.201501120

By:

Xincun Dou;
Baiyi Zu;
Zhaofeng Wu;
Zheng Yang;
Linjuan Guo;
Shengli Zhang;
Haibo Zeng

Publication type:

Article

Exploiting Memristive BiFeO3 Bilayer Structures for Compact Sequential Logics.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 22, p. 3357, doi. 10.1002/adfm.201303365

By:

You, Tiangui;
Shuai, Yao;
Luo, Wenbo;
Du, Nan;
Bürger, Danilo;
Skorupa, Ilona;
Hübner, René;
Henker, Stephan;
Mayr, Christian;
Schüffny, René;
Mikolajick, Thomas;
Schmidt, Oliver G.;
Schmidt, Heidemarie

Publication type:

Article

Effect of ZnBi2O4 and Bi2O3 addition on the microstructure and electrical properties of ZnO–Co3O4–Mn3O4 varistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 36, p. 26834, doi. 10.1007/s10854-022-09348-6

By:

Hsiang, Hsing-I;
Chen, Chih-Cheng;
Kao, Chia-Chin

Publication type:

Article

Effect of DC ageing on the NiO-doped ZnO varistor ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 35, p. 26124, doi. 10.1007/s10854-022-09299-y

By:

Feng, Yong;
Li, Yupeng;
Zhao, Xuetong;
Zhao, Xia;
Guo, Men;
Yang, Lijun;
Liao, Ruijin

Publication type:

Article

Investigation on the effect of metal contacts on the vertical MnO2 nanowire array-based Schottky barrier diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 31, p. 23910, doi. 10.1007/s10854-021-07373-5

By:

Lynrah, Stacy A.;
Chinnamuthu, P.

Publication type:

Article

Surface impregnated copper influence on the sunlight-assisted photocatalysis of zinc oxide nanostructures.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 25, p. 20447, doi. 10.1007/s10854-022-08860-z

By:

Vivek, S.;
Preethi, S.;
Vachaspathi, M.;
Rengaraj, S.;
Cha, Suk Won;
Babu, K. Suresh

Publication type:

Article

Physical investigations of vanadium oxide thin films on p-Si substrate.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 20, p. 16263, doi. 10.1007/s10854-022-08519-9

By:

Bilgen, Y.;
Pakma, O.;
Kariper, I. A.;
Ozden, S.

Publication type:

Article

Evidence for negative differential resistance and switchable diode effect in multiferroic BiFe0.95Sc0.05O3-based resistive random access memory under doping engineering.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 19, p. 15848, doi. 10.1007/s10854-022-08485-2

By:

Mohanty, Himadri Nandan;
Mishra, S.

Publication type:

Article

Analytical study of a solution-processed diode based on ZnO nanoparticles using multi-walled carbon nanotubes as Schottky contact.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 18, p. 14508, doi. 10.1007/s10854-022-08371-x

By:

Bertoldo, Luis H. T.;
Nogueira, Gabriel L.;
Vieira, Douglas H.;
Klem, Maykel S.;
Ozório, Maíza S.;
Alves, Neri

Publication type:

Article

Electronic and optical properties of TMDs/Hg0.33Cd0.66Te.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 14, p. 11542, doi. 10.1007/s10854-022-08127-7

By:

Verma, Ravi Shankar;
Choudhary, Sudhanshu

Publication type:

Article

Structural and dielectric properties of PrFeTiO5 oxide.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 9, p. 6150, doi. 10.1007/s10854-022-07791-z

By:

Chakir, A.;
Mehdaoui, B.;
Chari, A.;
Bih, L.;
El Bouari, A.

Publication type:

Article

Heterojunction diode application of yttrium ıron oxide (Y3Fe5O12).

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 8, p. 5233, doi. 10.1007/s10854-022-07712-0

By:

Deniz, Ali Rıza;
Çaldıran, Zakir

Publication type:

Article

Design of Schottky barriers in ZnO–TiC interface and its application in high sensitivity detection of aniline.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 1, p. 458, doi. 10.1007/s10854-021-07319-x

By:

Dong, Hua-Dong;
Zhao, Jian-Ping;
Peng, Ming-Xing;
Zhang, Yong-Hui

Publication type:

Article

Barrier reduction and current transport mechanism in Pt/n-InP Schottky diodes using atomic layer deposited ZnO interlayer.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 18, p. 22792, doi. 10.1007/s10854-021-06758-w

By:

Kim, Hogyoung;
Jung, Myeong Jun;
Choi, Byung Joon

Publication type:

Article

Thickness and annealing evolution to physical properties of e-beam evaporated ZnTe thin films as a rear contact for CdTe solar cells.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 14, p. 19070, doi. 10.1007/s10854-021-06424-1

By:

Suthar, Deepak;
Himanshu;
Patel, S. L.;
Chander, S.;
Kannan, M. D.;
Dhaka, M. S.

Publication type:

Article

Au–Ag binary alloys on n-GaAs substrates and effect of work functions on Schottky barrier height.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 13, p. 17448, doi. 10.1007/s10854-021-06276-9

By:

Akkaya, Abdullah

Publication type:

Article

High-performance multilayer WSe2 p-type field effect transistors with Pd contacts for circuit applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 13, p. 17427, doi. 10.1007/s10854-021-06274-x

By:

Zhang, Lu;
Zhang, Yadong;
Sun, Xiaoting;
Jia, Kunpeng;
Zhang, Qingzhu;
Wu, Zhenhua;
Yin, Huaxiang

Publication type:

Article

The effect of thermal annealing on Ti/p-Si Schottky diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 11, p. 15343, doi. 10.1007/s10854-021-06084-1

By:

Asıl Uğurlu, H.;
Çınar Demir, K.;
Coşkun, C.

Publication type:

Article

Self-powered ethanol gas sensor based on the piezoelectric Ag/ZnO nanowire arrays at room temperature.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 6, p. 7739, doi. 10.1007/s10854-021-05494-5

By:

Zhang, Xixi;
Wang, Weiwei;
Zhang, Dongzhi;
Mi, Qian;
Yu, Sujing

Publication type:

Article

Mechanism for enhanced ferroelectricity in multi-doped BiFeO3 thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 1, p. 1265, doi. 10.1007/s10854-020-04900-8

By:

Ren, Xixi;
Tan, Guoqiang;
Li, Jincheng;
Liu, Yun;
Xue, Mintao;
Ren, Huijun;
Xia, Ao;
Liu, Wenlong

Publication type:

Article

Effect of metal-support couplings on the photocatalytic performance of Au-decorated ZnO nanorods.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 17, p. 14946, doi. 10.1007/s10854-020-04056-5

By:

Nguyen, Trung Hieu;
Do, T. Anh Thu;
Giang, Hong Thai;
Ho, Truong Giang;
Pham, Quang Ngan;
Man, Minh Tan

Publication type:

Article

Ag, Ni bimetallic supported g-C3N4 2D/Cd2Sb2O6.8 pyrochlore interface photocatalyst for efficient removal of organic pollutants.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 14, p. 11247, doi. 10.1007/s10854-020-03674-3

By:

Jayaraman, Venkatesan;
Mani, Alagiri

Publication type:

Article

The optimization of contact interface between metal/MoS2 FETs by oxygen plasma treatment.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 12, p. 9660, doi. 10.1007/s10854-020-03511-7

By:

Zhang, Yadong;
Jia, Kunpeng;
Liu, Jiangtao;
Pan, Yu;
Luo, Kun;
Yu, Jiahan;
Zhang, Yongkui;
Tian, Hanmin;
Wu, Zhenhua;
Yin, Huaxiang

Publication type:

Article

Thermal neutron irradiation effects on structural and electrical properties of n-type 4H‒SiC.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 11, p. 8496, doi. 10.1007/s10854-020-03385-9

By:

Vali, Indudhar Panduranga;
Shetty, Pramoda Kumara;
Mahesha, M. G.;
Rao, Mala N.;
Kesari, Swayam

Publication type:

Article

NO2 gas sensing properties of Pd/WO3 films prepared by glancing angle deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 8, p. 5827, doi. 10.1007/s10854-019-02585-2

By:

Liu, Hao;
Xu, Yaohua;
Zhang, Xiao;
Zhao, Wenrui;
Ming, Anjie;
Wei, Feng

Publication type:

Article

Effect of annealing temperature on structural and electrical properties of Al/Nb-doped TiO2 Schottky diodes on Pt–Si substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 19, p. 18287, doi. 10.1007/s10854-019-02183-2

By:

Yu, Shihui;
Zhang, Chunmei;
Yang, Pan;
Wu, Muying;
Sun, Yongtao;
Li, Lingxia

Publication type:

Article

Structure and properties of Ta/Al/Ta and Ti/Al/Ti/Au multilayer metal stacks formed as ohmic contacts on n-GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 19, p. 18144, doi. 10.1007/s10854-019-02167-2

By:

Boturchuk, Ievgen;
Walter, Thomas;
Julsgaard, Brian;
Khatibi, Golta;
Schwarz, Sabine;
Stöger-Pollach, Michael;
Pedersen, Kjeld;
Popok, Vladimir N.

Publication type:

Article

Rapid fabrication and improved electrical properties of CaCu3Ti4O12 ceramics by sol–gel and spark plasma sintering techniques.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 14, p. 13401, doi. 10.1007/s10854-019-01708-z

By:

Mao, Pu;
Wang, Jiping;
Zhang, Lixue;
Liu, Shujuan;
Zhao, Yingying;
Sun, Qinzhao

Publication type:

Article

Low resistance metal contacts on MoS2 films deposited by laser physical vapor deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 10, p. 10024, doi. 10.1007/s10854-019-01345-6

By:

Jagannadham, K.

Publication type:

Article

On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60–400 K.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 9, p. 9029, doi. 10.1007/s10854-019-01233-z

By:

Durmuş, Haziret;
Yıldırım, Mert;
Altındal, Şemsettin

Publication type:

Article

Evaluation of temperature dependent electrical transport parameters in Fe3O4/SiO2/n-Si metal–insulator-semiconductor (MIS) type Schottky barrier heterojunction in a wide temperature range.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 9, p. 8955, doi. 10.1007/s10854-019-01223-1

By:

Nanda Kumar Reddy, Nallabala;
Godavarthi, Srinivas;
Mohan Kumar, Kesarla;
Kummara, Venkata Krishnaiah;
Prabhakar Vattikuti, S. V.;
Akkera, Harish Sharma;
Bitla, Yugandhar;
Jilani, S. A. K.;
Manjunath, V.

Publication type:

Article

The modification of ultraviolet illumination to resistive switching behaviors in Ga2O3 memory device.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 9, p. 8629, doi. 10.1007/s10854-019-01185-4

By:

Zhang, Lei;
Yu, Hao;
Xiong, Lingxing;
Zhu, Wenhui;
Wang, Liancheng

Publication type:

Article

Two step method for preparing TiO2/Ag/rGO heterogeneous nanocomposites and its photocatalytic activity under visible light irradiation.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 9, p. 8471, doi. 10.1007/s10854-019-01167-6

By:

Tang, Tian;
Wang, Tao;
Gao, Yang;
Xiao, Huan;
Xu, JiaHui

Publication type:

Article

GaN-UV photodetector integrated with asymmetric metal semiconductor metal structure for enhanced responsivity.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 11, p. 8958, doi. 10.1007/s10854-018-8917-3

By:

Jain, Shubhendra Kumar;
Aggarwal, Neha;
Krishna, Shibin;
Kumar, Rahul;
Husale, Sudhir;
Gupta, Vinay;
Gupta, Govind

Publication type:

Article

Effects of dc bias on dielectric relaxations in CaCu3Ti4O12 ceramics.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 6, p. 4488, doi. 10.1007/s10854-017-8396-y

By:

Wu, Kangning;
Huang, Yuwei;
Tang, Zhuang;
Li, Jianying;
Li, Shengtao;
Hou, Linlin

Publication type:

Article

Graphene-supported C-N-S tridoped TiO photo-catalyst with improved band gap and charge transfer properties.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 20, p. 15637, doi. 10.1007/s10854-017-7452-y

By:

Hamadanian, Masood;
Rostami, Mojtaba;
Jabbari, Vahid

Publication type:

Article

Non-ohmic properties of CaCuTiO thin films deposited By RF-sputtering.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 20, p. 15685, doi. 10.1007/s10854-017-7458-5

By:

Foschini, C.;
Hangai, B.;
Cavalcante, C.;
Simões, A.;
Cilense, M.;
Longo, E.

Publication type:

Article

Influences of lithium on the defect structures and electrical properties of ZnO-BiO based varistors.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 18, p. 13905, doi. 10.1007/s10854-017-7239-1

By:

Li, Shengtao;
Lin, Jiajun;
He, Jinqiang;
Liu, Wenfeng

Publication type:

Article

The influence of electrode contact on the anodization of Pt/sol-gel derived SrTiO thin film/Al capacitor.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 2, p. 1572, doi. 10.1007/s10854-016-5697-5

By:

Yao, Manwen;
Li, Fei;
Li, Qiuxia;
Xu, Kaien;
Yao, Xi

Publication type:

Article

Analysis of electrostatic doped Schottky barrier carbon nanotube FET for low power applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 2, p. 1762, doi. 10.1007/s10854-016-5723-7

By:

Singh, Amandeep;
Khosla, Mamta;
Raj, Balwinder

Publication type:

Article

Facile fabrication of carbon spheres/n-Si junction diodes based on sucrose.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 12, p. 13044, doi. 10.1007/s10854-016-5445-x

By:

Nieves, Cesar;
Meléndez, Anamaris;
Pinto, Nicholas;
Ramos, Idalia

Publication type:

Article