Works about SAPPHIRES
Results: 1739
α-Phase Gallium Oxide Films and Their Solar Blind Photodetectors Based on Pulsed Laser Deposition.
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- Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 329, doi. 10.16553/j.cnki.issn1000-985x.2024.0268
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- Article
Growth of α-Ga<sub>2</sub>O<sub>3</sub> on Different Plane of Sapphire Substrate by Mist-CVD Method.
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- Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 255, doi. 10.16553/j.cnki.issn1000-985x.2024.0273
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- Article
Mist CVD Grown High-Phase-Purity α-Ga<sub>2</sub>O<sub>3</sub> and Its Photoresponse Performance.
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- Journal of Synthetic Crystals, 2025, v. 54, n. 2, p. 233, doi. 10.16553/j.cnki.issn1000-985x.2024.0260
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- Article
β-Ga 2 O 3 Thin Films via an Inorganic Sol–Gel Spin Coating: Preparation and Characterization.
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- Nanomaterials (2079-4991), 2025, v. 15, n. 4, p. 277, doi. 10.3390/nano15040277
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- Article
Sissy in Dub: after Desiree C. Bailey.
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- Caribbean Quarterly, 2024, v. 70, n. 3/4, p. 451, doi. 10.1080/00086495.2024.2427966
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- Article
Growth of Homogeneous High‐Density Horizontal SWNT Arrays on Sapphire through a Magnesium‐Assisted Catalyst Anchoring Strategy.
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- Angewandte Chemie, 2021, v. 133, n. 17, p. 9416, doi. 10.1002/ange.202101333
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- Article
Large-Area, Periodic, Hexagonal Wrinkles on Nanocrystalline Graphitic Film.
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- Advanced Functional Materials, 2015, v. 25, n. 34, p. 5492, doi. 10.1002/adfm.201502010
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- Article
Correlation between grain orientation and carrier concentration of poly-crystalline InO thin film grown by MOCVD.
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- Journal of Materials Science, 2015, v. 50, n. 3, p. 1058, doi. 10.1007/s10853-014-8662-9
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- Article
Achieve 2-inch-diameter homogeneous GaN films on sapphire substrates by pulsed laser deposition.
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- Journal of Materials Science, 2014, v. 49, n. 9, p. 3511, doi. 10.1007/s10853-014-8064-z
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- Article
Performance enhancement of GaN-based light-emitting diodes by surface plasmon coupling and scattering grating.
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- Journal of Materials Science, 2013, v. 48, n. 16, p. 5673, doi. 10.1007/s10853-013-7363-0
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- Article
Copper crystals on the (1120) sapphire plane: orientation relationships, triple line ridges and interface shape equilibrium.
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- Journal of Materials Science, 2013, v. 48, n. 7, p. 3013, doi. 10.1007/s10853-012-7080-0
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- Article
Equilibrium segregation of Ti to Au-sapphire interfaces.
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- Journal of Materials Science, 2012, v. 47, n. 4, p. 1647, doi. 10.1007/s10853-011-5707-1
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- Article
Chromium influence on rhombohedral twinning in sapphire.
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- Journal of Materials Science, 2011, v. 46, n. 23, p. 7431, doi. 10.1007/s10853-011-5706-2
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- Article
The effect of growth conditions and N/O ambient on LO-phonon replicas during epitaxial growth of ZnO on c-sapphire.
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- Journal of Materials Science, 2010, v. 45, n. 22, p. 6009, doi. 10.1007/s10853-010-4684-0
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- Article
Oxygen partial pressure dependence of the properties of MgZnO thin films during annealing.
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- Journal of Materials Science, 2010, v. 45, n. 22, p. 6206, doi. 10.1007/s10853-010-4714-y
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- Article
Wing tilt investigations on GaN epilayer grown on maskless grooved sapphire by MOCVD.
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- Journal of Materials Science, 2010, v. 45, n. 6, p. 1503, doi. 10.1007/s10853-009-4113-4
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- Article
Strain analysis of a GaN epilayer grown on a c-plane sapphire substrate with different growth times.
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- Journal of Materials Science, 2007, v. 42, n. 10, p. 3569, doi. 10.1007/s10853-007-1562-5
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- Article
Morphology and orientation of the equilibrated Au–sapphire $$ \left( {10\bar 10} \right) $$ interface.
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- 2006
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- Letter
Transient nucleation of cavities under coupled lattice and boundary diffusion.
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- Journal of Materials Science, 2004, v. 39, n. 13, p. 4107, doi. 10.1023/B:JMSC.0000033390.27690.8d
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- Article
Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates.
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- Journal of Materials Science, 2004, v. 39, n. 9, p. 3217, doi. 10.1023/B:JMSC.0000025864.93045.5f
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- Article
Room temperature growth of high quality ZnO thin film on sapphire substrates.
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- Journal of Materials Science, 2004, v. 39, n. 9, p. 3235, doi. 10.1023/B:JMSC.0000025867.97303.74
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- Article
Surface reconstruction of α-(0001) sapphire: An AFM, XPS, AES and EELS investigation.
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- Journal of Materials Science, 2004, v. 39, n. 8, p. 2911, doi. 10.1023/B:JMSC.0000021479.20164.f8
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- Article
Quantitative Raman Spectroscopy of Urea and Thiourea in the Reaction Mixtures of Allantoin and 4,5‐Dihydroxyimidazolidine‐2‐Tione Formation.
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- Journal of Raman Spectroscopy, 2024, v. 55, n. 11, p. 1165, doi. 10.1002/jrs.6729
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- Article
Disambiguation of pyrope‐rich garnet inclusions in coloured sapphires from Tanzania and identification of other inclusions by Raman spectroscopy.
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- Journal of Raman Spectroscopy, 2023, v. 54, n. 11, p. 1213, doi. 10.1002/jrs.6570
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- Article
Depth‐dependent strain distribution in AlGaN‐based deep ultraviolet light‐emitting diodes using surface‐plasmon‐enhanced Raman spectroscopy.
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- Journal of Raman Spectroscopy, 2021, v. 52, n. 11, p. 1860, doi. 10.1002/jrs.6247
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- Article
Raman spectroscopic investigation of zircon in gem‐quality sapphire: Application in origin determination.
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- Journal of Raman Spectroscopy, 2021, v. 52, n. 5, p. 1011, doi. 10.1002/jrs.6092
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- Article
The influence of the Fe<sub>2</sub>O<sub>3</sub> content on the Raman spectra of sapphires.
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- Journal of Raman Spectroscopy, 2017, v. 48, n. 3, p. 453, doi. 10.1002/jrs.5043
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- Article
Investigation of the vibrational modes of ZnO grown by MOCVD on different orientation planes.
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- Journal of Raman Spectroscopy, 2015, v. 46, n. 2, p. 251, doi. 10.1002/jrs.4617
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- Article
A portable versus micro-Raman equipment comparison for gemmological purposes: the case of sapphires and their imitations.
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- Journal of Raman Spectroscopy, 2014, v. 45, n. 11/12, p. 1309, doi. 10.1002/jrs.4555
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- Article
Simple and inexpensive instrument for deep-UV Raman spectroscopy.
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- Journal of Raman Spectroscopy, 2013, v. 44, n. 12, p. 1789, doi. 10.1002/jrs.4394
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- Article
NOISE MEASUREMENTS ON NbN THIN FILMS WITH A NEGATIVE TEMPERATURE RESISTANCE COEFFICIENT DEPOSITED ON SAPPHIRE AND ON SiO<sub>2</sub>.
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- Fluctuation & Noise Letters, 2007, v. 7, n. 1, p. L19, doi. 10.1142/S0219477507003660
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- Article
β-Ga<sub>2</sub>O<sub>3</sub> MOSFETs electrical characteristic study of various etching depths grown on sapphire substrate by MOCVD.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03867-9
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- Article
Demonstration of MOCVD-grown Ga<sub>2</sub>O<sub>3</sub> power MOSFETs on sapphire with in-situ Si-doped by tetraethyl orthosilicate (TEOS).
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03858-w
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- Article
CVD growth of large-area monolayer WS<sub>2</sub> film on sapphire through tuning substrate environment and its application for high-sensitive strain sensor.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03782-z
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- Article
Low T direct plasma assisted growth of graphene on sapphire and its integration in graphene/MoS<sub>2</sub> heterostructure-based photodetectors.
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- NPJ 2D Materials & Applications, 2023, v. 7, n. 1, p. 1, doi. 10.1038/s41699-023-00419-8
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- Article
Morphological and optical properties of Pd<sub>x</sub>Ag<sub>1-x</sub> alloy nanoparticles.
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- Science & Technology of Advanced Materials, 2018, v. 19, n. 1, p. 160, doi. 10.1080/14686996.2018.1435944
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- Article
Generation of thermal scattering cross sections for Sapphire (Al2O3) and Bi Crystal filters used in nuclear facilities.
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- Annals of the University of Craiova, Physics, 2019, v. 29, p. 45
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- Article
Machining of Single-Crystal Sapphire with Polysaccharide- Bonded Abrasive Tool.
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- Transactions of Nanjing University of Aeronautics & Astronautics, 2020, v. 37, n. 3, p. 360, doi. 10.16356/j.1005-1120.2020.03.002
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- Article
Leidenfrost Motion of Water Microdroplets on Surface Substrate: Epitaxy of Gallium Oxide via Mist Chemical Vapor Deposition.
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- Advanced Materials Interfaces, 2021, v. 8, n. 6, p. 1, doi. 10.1002/admi.202001895
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- Article
Selective Area Growth and Transfer of High Optical Quality MoS<sub>2</sub> Layers.
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- Advanced Materials Interfaces, 2020, v. 7, n. 24, p. 1, doi. 10.1002/admi.202001549
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- Article
Controlling Atomic Layer Deposition of 2D Semiconductor SnS<sub>2</sub> by the Choice of Substrate.
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- Advanced Materials Interfaces, 2020, v. 7, n. 19, p. 1, doi. 10.1002/admi.202001046
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- Article
Modification of the Electronic Transport in Atomically Thin WSe<sub>2</sub> by Oxidation.
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- Advanced Materials Interfaces, 2020, v. 7, n. 18, p. 1, doi. 10.1002/admi.202000422
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- Article
Photoluminescence Characteristics of Multilayer HfSe<sub>2</sub> Synthesized on Sapphire Using Ion Implantation.
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- Advanced Materials Interfaces, 2018, v. 5, n. 8, p. 1, doi. 10.1002/admi.201701619
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- Article
Evolution of the Ferromagnetism of Mn<sub>x</sub>Si<sub>1 –</sub><sub>x</sub> (x ≈ 0.5) Films Produced by Laser Synthesis on c- and r-Cut Sapphire Substrates as the Laser Energy Density on the Target Changes.
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- Journal of Experimental & Theoretical Physics, 2020, v. 131, n. 4, p. 618, doi. 10.1134/S1063776120090198
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- Article
Anisotropy of sapphire single crystal sputtering.
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- Journal of Experimental & Theoretical Physics, 2015, v. 121, n. 2, p. 222, doi. 10.1134/S1063776115080129
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- Article
ПРИМЕНЕНИЕ ВОЛОКОННО-ОПТИЧЕСКИХ ДАТЧИКОВ В СИСТЕМАХ АВТОМАТИЧЕСКОГО ДИАГНОСТИРОВАНИЯ СУДОВЫХ ГАЗОТУРБИННЫХ УСТАНОВОК
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- Automation of Technological & Business Processes / Avtomatizaciâ Tehnologiceskih i Biznes-Processov, 2019, v. 11, n. 2, p. 46, doi. 10.15673/atbp.v11i2.1374
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- Article
Preparation of platinum- and silver-incorporated TiO 2 coatings in thin-film photoreactor for the photocatalytic decomposition of o -cresol.
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- Environmental Technology, 2011, v. 32, n. 15, p. 1799, doi. 10.1080/09593330.2011.556670
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- Article
Author Correction: A hBN/Ga<sub>2</sub>O<sub>3</sub> pn junction diode.
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- 2024
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- Correction Notice
A scattered volume emitter micropixel architecture for ultra efficient light extraction from DUV LEDs.
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- Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-64689-y
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- Article
Pollution-Free Approaches for Highly Efficient Sapphire Substrate Processing by Mechanical Chemical Polishing.
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- Catalysts (2073-4344), 2019, v. 9, n. 7, p. 594, doi. 10.3390/catal9070594
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- Article