Works about SAPPHIRES

Results: 1780

Gemscapes.

Published in:

Journal of Gemmology, 2025, v. 39, n. 6, p. 594

By:

Renfro, Nathan D.

Publication type:

Article

Gold-in-Quartz from the McLaughlin Mine, California, USA.

Published in:

Journal of Gemmology, 2025, v. 39, n. 6, p. 528

By:

Laurs, Brendan M.

Publication type:

Article

Grandidierite Inclusions in a Sri Lankan Sapphire.

Published in:

Journal of Gemmology, 2025, v. 39, n. 6, p. 527

By:

Ziyun Zhang;
Yujie Gao;
Wenli Liao

Publication type:

Article

Advanced Manufacturing on Nano- and Microscale.

Published in:

Nanomaterials (2079-4991), 2025, v. 15, n. 11, p. 852, doi. 10.3390/nano15110852

By:

Zhang, Ruifeng;
Ruan, Qifeng;
Wang, Hao;
Ke, Yujie

Publication type:

Article

Sissy in Dub: after Desiree C. Bailey.

Published in:

Caribbean Quarterly, 2024, v. 70, n. 3/4, p. 451, doi. 10.1080/00086495.2024.2427966

By:

Thompson, Ide Amari

Publication type:

Article

Ti:sapphire femtosecond laser interaction with human dental dentine.

Published in:

Surface Engineering, 2011, v. 27, n. 10, p. 749, doi. 10.1179/1743294411Y.0000000005

By:

Ji, L F;
Li, L;
Devlin, H;
Liu, Z;
Whitehead, D;
Wang, Z B;
Wang, W;
Jiao, J

Publication type:

Article

Nanocrystalline-Graphene-Tailored Hexagonal Boron Nitride Thin Films.

Published in:

Angewandte Chemie, 2014, v. 126, n. 43, p. 11677, doi. 10.1002/ange.201405762

By:

Lee, Kang Hyuck;
Shin, Hyeon ‐ Jin;
Kumar, Brijesh;
Kim, Han Sol;
Lee, Jinyeong;
Bhatia, Ravi;
Kim, Sang ‐ Hyeob;
Lee, In ‐ Yeal;
Lee, Hyo Sug;
Kim, Gil ‐ Ho;
Yoo, Ji ‐ Beom;
Choi, Jae ‐ Young;
Kim, Sang ‐ Woo

Publication type:

Article

Ga2O3-based p-i-n solar blind deep ultraviolet photodetectors.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 9, p. 8445, doi. 10.1007/s10854-019-01163-w

By:

Jian, Li-Yi;
Lee, Hsin-Ying;
Lee, Ching-Ting

Publication type:

Article

Optical and thermal performance of nitride-based thin-film flip-chip light-emitting diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 23, p. 19825, doi. 10.1007/s10854-018-0110-1

By:

Liu, Wen-Jie;
Hu, Xiao-Long;
Liu, Yi-Jun

Publication type:

Article

Crystal quality improvement of sputtered AlN film on sapphire substrate by high-temperature annealing.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 16, p. 13766, doi. 10.1007/s10854-018-9507-0

By:

Zhao, Lu;
Yang, Kun;
Ai, Yujie;
Zhang, Lian;
Niu, Xiaolong;
Lv, Hongrui;
Zhang, Yun

Publication type:

Article

Structural properties of InGaN/GaN/Al2O3 structure from reciprocal space mapping.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 14, p. 12373, doi. 10.1007/s10854-018-9351-2

By:

Bilgili, A. Kursat;
Akpinar, Ömer;
Kurtulus, Gürkan;
Ozturk, M. Kemal;
Ozcelik, Süleyman;
Ozbay, Ekmel

Publication type:

Article

Investigatory nanoscale thickness of the chemical reaction layer of sapphire substrate for the various dipping temperatures of slurry suitable in CMP.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 17, p. 13041, doi. 10.1007/s10854-017-7136-7

By:

Lin, Zone-Ching;
Ding, Hao-Yang;
Ma, Shih-Hung

Publication type:

Article

Study on the optical properties of β-GaO films grown by MOCVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 15, p. 10997, doi. 10.1007/s10854-017-6882-x

By:

Hu, Daqiang;
Zhuang, Shiwei;
Ma, Zhengzheng;
Dong, Xin;
Du, Guotong;
Zhang, Baolin;
Zhang, Yuantao;
Yin, Jingzhi

Publication type:

Article

Colossal magnetoresistance at wide temperature range in PrSrMnO film grown on (0001) sapphire.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 15, p. 11275, doi. 10.1007/s10854-017-6917-3

By:

Wang, Haiou;
Su, Kunpeng;
Huang, Shuai;
Huo, Dexuan;
Tan, Weishi

Publication type:

Article

A comparative study of InN growth on quartz, silicon, C-sapphire and bulk GaN substrates by RF magnetron sputtering.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 13, p. 9228, doi. 10.1007/s10854-017-6657-4

By:

Bashir, Umar;
Hassan, Zainuriah;
Ahmed, Naser

Publication type:

Article

AFM and XPS studies on material removal mechanism of sapphire wafer during chemical mechanical polishing (CMP).

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 12, p. 9921, doi. 10.1007/s10854-015-3668-x

By:

Zhou, Yan;
Pan, Guoshun;
Shi, Xiaolei;
Gong, Hua;
Xu, Li;
Zou, Chunli

Publication type:

Article

Effect of O flow rate in the annealing process on metal-insulator transition of vanadium oxide thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 9, p. 6920, doi. 10.1007/s10854-015-3310-y

By:

Li, Na;
Hu, Ming;
Liang, Ji-Ran;
Liu, Xing;
Wu, Mai-Jun

Publication type:

Article

The lattice distortion of β-GaO film grown on c-plane sapphire.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 5, p. 3231, doi. 10.1007/s10854-015-2821-x

By:

Chen, Yuanpeng;
Liang, Hongwei;
Xia, Xiaochuan;
Tao, Pengcheng;
Shen, Rensheng;
Liu, Yang;
Feng, Yanbin;
Zheng, Yuehong;
Li, Xiaona;
Du, Guotong

Publication type:

Article

Influence of Cu dopant on the structure and optical properties of ZnO thin films prepared by MOCVD.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 3, p. 1591, doi. 10.1007/s10854-014-2580-0

By:

Cai, Xin;
Liang, Hongwei;
Xia, Xiaochuan;
Shen, Rensheng;
Liu, Yang;
Luo, Yingmin;
Du, Guotong

Publication type:

Article

Epitaxial growth and optical characterization of AlInGaN quaternary alloys with high Al/In mole ratio.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 2, p. 705, doi. 10.1007/s10854-014-2453-6

By:

Zhu, Min;
Zhang, Xiong;
Wang, Shuchang;
Yang, Hongquan;
Cui, Yiping

Publication type:

Article

Surface properties of AlN and AlGaN epitaxial layers characterized by angle resolved X-ray photoelectron spectroscopy.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 2, p. 950, doi. 10.1007/s10854-014-2487-9

By:

Yang, Hongquan;
Zhang, Xiong;
Wang, Shuchang;
Zhu, Min;
Cui, Yiping;
Dai, Ning

Publication type:

Article

Effects of sputtering atmosphere on the properties of c-plane ScAlN thin films prepared on sapphire substrate.

Published in:

Journal of Materials Science: Materials in Electronics, 2015, v. 26, n. 1, p. 472, doi. 10.1007/s10854-014-2423-z

By:

Zhang, Yao;
Zhu, Weixin;
Zhou, Dong;
Yang, Yixi;
Yang, Chengtao

Publication type:

Article

Effects of growth temperature on electrical and structural properties of sputtered GaN films with a cermet target.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 3, p. 1404, doi. 10.1007/s10854-014-1742-4

By:

Li, Cheng-Che;
Kuo, Dong-Hau

Publication type:

Article

Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 1, p. 267, doi. 10.1007/s10854-013-1582-7

By:

Yang, Dechao;
Liang, Hongwei;
Qiu, Yu;
Shen, Rensheng;
Liu, Yang;
Xia, Xiaochuan;
Song, Shiwei;
Zhang, Kexiong;
Yu, Zhennan;
Du, Guotong

Publication type:

Article

Evolution of the mosaic structure in InGaN layer grown on a thick GaN template and sapphire substrate.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 11, p. 4471, doi. 10.1007/s10854-013-1427-4

By:

Arslan, Engin;
Ozturk, Mustafa;
Çakmak, Huseyin;
Demirel, Pakize;
Özçelik, Süleyman;
Ozbay, Ekmel

Publication type:

Article

Effect of AlN buffer layer on the microstructure and bandgap of AlN films deposited on sapphire substrates by pulsed laser deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 11, p. 4499, doi. 10.1007/s10854-013-1431-8

By:

He, Huan;
Huang, Lirong;
Xiao, Min;
Fu, Yuechun;
Shen, Xiaoming;
Zeng, Jianmin

Publication type:

Article

Improvement of the quality of GaN epilayer by combining a SiN interlayer and changed GaN growth mode.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 8, p. 2716, doi. 10.1007/s10854-013-1160-z

By:

Yang, Dechao;
Liang, Hongwei;
Qiu, Yu;
Song, Shiwei;
Liu, Yang;
Shen, Rensheng;
Luo, Yingmin;
Du, Guotong

Publication type:

Article

Erratum to: Enhanced H sensing properties of a-plane ZnO prepared on c-cut sapphire substrate by sputtering.

Published in:

2013

By:

Vijayalakshmi, K.;
Karthick, K.;
Pugazhvadivu, K.;
Tamilarasan, K.

Publication type:

Correction Notice

Enhanced H sensing properties of a-plane ZnO prepared on c-cut sapphire substrate by sputtering.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 4, p. 1325, doi. 10.1007/s10854-012-0927-y

By:

Vijayalakshmi, K.;
Karthick, K.;
Tamilarasan, K.

Publication type:

Article

Preparation and thermoelectric properties of BP films on SOI and sapphire substrates.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 8, p. 966, doi. 10.1007/s10854-010-0245-1

By:

Kumashiro, Y.;
Nakamura, K.;
Enomoto, T.;
Tanaka, M.

Publication type:

Article

SIMS depth profiling of Mg back-diffusion in (AlGaIn)N light-emitting diodes.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 176, doi. 10.1007/s10854-007-9515-y

By:

Kirste, Lutz;
Köhler, Klaus;
Maier, Manfred;
Kunzer, Michael;
Maier, Markus;
Wagner, Joachim

Publication type:

Article

The origin and reduction of dislocations in Gallium Nitride.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 208, doi. 10.1007/s10854-008-9648-7

By:

Oliver, R. A.;
Kappers, M. J.;
McAleese, C.;
Datta, R.;
Sumner, J.;
Humphreys, C. J.

Publication type:

Article

Initial process effects on the surface morphology and structural property of the AlN epilayers.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 215, doi. 10.1007/s10854-008-9682-5

By:

Xiaohong Chen;
Shuping Li;
Junyong Kang

Publication type:

Article

Microstructure of a-plane ( $$2\bar{1}\bar{1}0$$ ) GaN ELOG stripe patterns with different in-plane orientation.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 46, doi. 10.1007/s10854-008-9638-9

By:

Wernicke, Tim;
Zeimer, Ute;
Herms, Martin;
Weyers, Markus;
Kneissl, Michael;
Irmer, Gert

Publication type:

Article

Dependency of oxygen partial pressure on the characteristics of ZnO films grown by radio frequency magnetron sputtering.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 744, doi. 10.1007/s10854-007-9401-7

By:

Ahn, C. H.;
Kim, Y. Y.;
Kang, S. W.;
Kong, B. H.;
Mohanta, S. K.;
Cho, H. K.;
Kim, J. H.;
Lee, H. S.

Publication type:

Article

Deep UV light emitting diodes grown by gas source molecular beam epitaxy.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 764, doi. 10.1007/s10854-007-9405-3

By:

Nikishin, Sergey;
Borisov, Boris;
Kuryatkov, Vladimir;
Holtz, Mark;
Garrett, Gregory A.;
Sarney, Wendy L.;
Sampath, Anand V.;
Hongen Shen;
Wraback, Michael;
Usikov, Alexander;
Dmitriev, Vladimir

Publication type:

Article

Dislocations at the interface between sapphire and GaN.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 2, p. 143, doi. 10.1007/s10854-007-9307-4

By:

Lankinen, A.;
Lang, T.;
Suihkonen, S.;
Svensk, O.;
Säynätjoki, A.;
Tuomi, T. O.;
McNally, P. J.;
Odnoblyudov, M.;
Bougrov, V.;
Danilewsky, A. N.;
Bergman, P.;
Simon, R.

Publication type:

Article

Wear of MoS2 layer in a ball-on-disk test: experiments and finite element modeling.

Published in:

Continuum Mechanics & Thermodynamics, 2024, v. 36, n. 5, p. 1379, doi. 10.1007/s00161-023-01276-y

By:

Białas, Marcin;
Maciejewski, Jan;
Kucharski, Stanisław

Publication type:

Article

Friction coefficient of solid lubricating coating as a function of contact pressure: experimental results and microscale modeling.

Published in:

Continuum Mechanics & Thermodynamics, 2021, v. 33, n. 4, p. 1733, doi. 10.1007/s00161-021-00999-0

By:

Białas, Marcin;
Maciejewski, Jan;
Kucharski, Stanisław

Publication type:

Article

From Sapphires to Cassava: The Politics of Debt in Northwestern Cambodia.

Published in:

ACME: An International Journal for Critical Geographies, 2021, v. 20, n. 4, p. 431

By:

Gyorvary, Sabrina;
Lamb, Vanessa

Publication type:

Article

Epitaxial Fe3O4 Films Grown on R-Plane Sapphire by Pulsed Laser Deposition.

Published in:

Inorganic Materials, 2020, v. 56, n. 2, p. 164, doi. 10.1134/S0020168520020120

By:

Malikov, I. V.;
Berezin, V. A.;
Fomin, L. A.;
Chernykh, A. V.

Publication type:

Article

Epitaxial Growth of Fe3O4 Layers on the C-Plane of Sapphire by Pulsed Laser Deposition.

Published in:

Inorganic Materials, 2019, v. 55, n. 1, p. 42, doi. 10.1134/S0020168519010072

By:

Malikov, I. V.;
Berezin, V. A.;
Fomin, L. A.;
Mikhailov, G. M.

Publication type:

Article

Analysis of α-alumina samples by mass spectrometry with inductively coupled plasma and laser ablation.

Published in:

Inorganic Materials, 2015, v. 51, n. 14, p. 1410, doi. 10.1134/S0020168515140083

By:

Khvostikov, V.;
Karandashev, V.;
Burmii, Zh.

Publication type:

Article

Optical homogeneity of Ti:Sapphire crystals grown by horizontal directional solidification.

Published in:

Inorganic Materials, 2012, v. 48, n. 11, p. 1111, doi. 10.1134/S0020168512110088

By:

Nizhankovskiy, S.;
Krivonosov, E.;
Baranov, V.;
Budnikov, A.;
Kanishchev, V.;
Grin', L.;
Adonkin, G.

Publication type:

Article

Structurally perfect silicon layers produced on sapphire by oxygen ion implantation.

Published in:

Inorganic Materials, 2011, v. 47, n. 6, p. 571, doi. 10.1134/S0020168511060239

By:

Vorotyntsev, V.;
Shobolov, E.;
Gerasimov, V.

Publication type:

Article

Sapphire surface preparation for the growth of silicon layers by molecular-beam epitaxy.

Published in:

Inorganic Materials, 2010, v. 46, n. 7, p. 693, doi. 10.1134/S0020168510070010

By:

Denisov, S. A.;
Chalkov, V. Yu.;
Shengurov, V. G.;
Svetlov, S. P.;
Pavlov, D. A.;
Pitirimova, E. A.

Publication type:

Article

Effect of nanosphere size on the luminescence of synthetic opal.

Published in:

Inorganic Materials, 2009, v. 45, n. 3, p. 260, doi. 10.1134/S002016850903008X

By:

Gruzintsev, A.;
Emel’chenko, G.;
Masalov, V.;
Yakimov, E.

Publication type:

Article

Effect of neutron irradiation on optical spectra of sapphire crystals.

Published in:

Inorganic Materials, 2008, v. 44, n. 7, p. 721, doi. 10.1134/S002016850807008X

By:

Abdukadyrova, I. Kh.

Publication type:

Article

Structural perfection of heteroepitaxial silicon layers grown on sapphire by sublimation-source molecular beam epitaxy.

Published in:

Inorganic Materials, 2007, v. 43, n. 4, p. 331, doi. 10.1134/S0020168507040012

By:

Denisov, S.;
Svetlov, S.;
Chalkov, V.;
Shengurov, V.;
Pavlov, D.;
Korotkov, E.;
Pitirimova, E.;
Trushin, V.

Publication type:

Article

Effects of Fe-ion irradiation and annealing on the optical absorption in sapphire.

Published in:

Inorganic Materials, 2006, v. 42, n. 7, p. 756, doi. 10.1134/S0020168506070120

By:

Kabyshev, A. V.;
Konusov, F. V.

Publication type:

Article