Works matching DE "RESONANCE lamps"
Results: 25
Measurement of the concentration of 2D electrons in δ-doped InGaAs/GaAs pseudomorphic transistor structures using the photoluminescence spectroscopy.
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- Journal of Communications Technology & Electronics, 2013, v. 58, n. 3, p. 243, doi. 10.1134/S1064226913030133
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PHOTOLUMINESCENCE AND THERMOLUMINESCNCE OF BaS:Ce NANOPHOSPHORS.
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- Chalcogenide Letters, 2010, v. 7, n. 8, p. 497
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Host-Guest Complexes of Flavylium Cations and Cucurbit[7]uril: The Influence of Flavylium Substituents on the Structure and Stability of the Complex.
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- ChemPlusChem, 2015, v. 80, n. 12, p. 1779, doi. 10.1002/cplu.201500304
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A New FRET-Based Sensitive DNA Sensor for Medical Diagnostics using PNA Probe and Water-Soluble Blue Light Emitting Polymer.
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- Journal of Sensors, 2008, p. 1, doi. 10.1155/2008/270475
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- Article
Optical spectroscopic and thermal quenching behaviour of perovskite SrTiO<sub>3</sub>:Sm<sup>3+</sup> orange emitting phosphors for lighting applications.
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- Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 7, p. 5579, doi. 10.1007/s10854-018-8527-0
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Different electric-field dependences of geminate and nongeminate recombination in photoluminescence of a-Si:H.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 125, doi. 10.1007/s10854-007-9464-5
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Preparation and luminescent properties of CaTiO<sub>3</sub>: Pr<sup>3+</sup>, Al<sup>3+</sup> persistent phosphors by nitrate-citric acid combustion method.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 12, p. 1147, doi. 10.1007/s10854-007-9502-3
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Dislocation-related photoluminescence from processed Si.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 243, doi. 10.1007/s10854-007-9509-9
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Optical and structural properties of SiC nanocrystals.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 682, doi. 10.1007/s10854-007-9379-1
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- Article
Independent control of InAs quantum dot density and size on Al<sub>x</sub>Ga<sub>1–x</sub>As surfaces.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 714, doi. 10.1007/s10854-007-9389-z
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Growth and characteristics of ternary Zn<sub>1− x </sub>Mg<sub> x </sub>O films using magnetron co-sputtering.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 755, doi. 10.1007/s10854-007-9403-5
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Latest developments in GaN-based quantum devices for infrared optoelectronics.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, n. 8/9, p. 821, doi. 10.1007/s10854-007-9482-3
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Synthesis, crystal structure, and photoluminescence of a new Zn(II) molecular box compound derived from a two-armed bis-terdendate ligand.
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- Journal of Coordination Chemistry, 2010, v. 63, n. 17, p. 2976, doi. 10.1080/00958972.2010.502226
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Discrimination of MgO Ions by Means of an Improved In Situ Photoluminescence Cell and of Propyne as Probe Molecule.
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- Catalysis Letters, 2004, v. 92, n. 3/4, p. 101, doi. 10.1023/B:CATL.0000014331.73108.67
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Luminescence properties of monodispersed spherical BaWO:Eu microphosphors for white light-emitting diodes.
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- Journal of Materials Science, 2011, v. 46, n. 5, p. 1184, doi. 10.1007/s10853-010-4891-8
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Porous silicon upon multicrystalline silicon: Structure and photoluminiscence.
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- Journal of Materials Science, 2005, v. 40, n. 6, p. 1409, doi. 10.1007/s10853-005-0575-1
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Photoluminescence of terbium-containing sol-gel glasses.
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- Russian Journal of General Chemistry, 2009, v. 79, n. 12, p. 2574, doi. 10.1134/S1070363209120020
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Fabrication of needle-like ZnO nanorods arrays by a low-temperature seed-layer growth approach in solution.
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- Applied Physics A: Materials Science & Processing, 2007, v. 89, n. 3, p. 673, doi. 10.1007/s00339-007-4167-6
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The investigation of photoluminescence centers in porous alumina membranes.
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- Applied Physics A: Materials Science & Processing, 2006, v. 84, n. 3, p. 297, doi. 10.1007/s00339-006-3623-z
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- Article
Effect of chemical treatment on photoluminescence spectra of SiO<sub> x </sub> layers with built-in Si nanocrystals.
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- Semiconductors, 2007, v. 41, n. 10, p. 1248, doi. 10.1134/S1063782607100223
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Electrical properties and photoluminescence of SiO<sub>x</sub> layers with Si nanocrystals in relation to the SiO<sub>x</sub> composition.
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- Semiconductors, 2006, v. 40, n. 10, p. 1198, doi. 10.1134/S1063782606100137
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Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures.
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- Semiconductors, 2006, v. 40, n. 1, p. 79, doi. 10.1134/S1063782606010143
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Edge Photoluminescence of Single-Crystal Silicon at Room Temperature.
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- Semiconductors, 2005, v. 39, n. 4, p. 406, doi. 10.1134/1.1900253
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The Exciton Photoluminescence and Vertical Transport of Photoinduced Carriers in CdSe/CdMgSe Superlattices.
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- Semiconductors, 2005, v. 39, n. 4, p. 432, doi. 10.1134/1.1900258
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Photoluminescent Surfactants: Mesostructured Organosilica Nanocomposites via Evaporation-induced Self Assembly (EISA).
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- Chemistry Letters, 2006, v. 35, n. 11, p. 9, doi. 10.1246/cl.2006.1240
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