Works matching DE "REFLECTION high energy electron diffraction"
Results: 46
Investigation of PbZr<sub>0.4</sub>Ti<sub>0.6</sub>O<sub>3</sub> capacitors with room temperature as-grown LaNiO<sub>3</sub> electrodes.
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- Journal of Materials Science, 2007, v. 42, n. 16, p. 6956, doi. 10.1007/s10853-006-1290-2
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- Article
Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03844-2
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- Article
Core level spectroscopy and RHEED analysis of KGd<sub>0.95</sub> Nd<sub>0.05</sub>(WO<sub>4</sub>)<sub>2</sub> surface.
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- European Physical Journal B: Condensed Matter, 2006, v. 51, n. 2, p. 293, doi. 10.1140/epjb/e2006-00208-8
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- Article
Epitaxial Growth of Ru and Pt on Pt(111) and Ru(0001), Respectively: A Combined AES and RHEED Study.
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- Journal of Nanotechnology, 2010, p. 1, doi. 10.1155/2010/487193
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- Article
EFFECT OF Bi SURFACTANT IN THE HETEROEPITAXIAL GROWTH OF Co ON Cu SURFACES.
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- Surface Review & Letters, 2006, v. 13, n. 2/3, p. 201, doi. 10.1142/S0218625X06008153
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- Article
SUPERSTRUCTURE FORMATION AND X-RAY PHOTOEMISSION PROPERTIES OF THE TlTiOPO<sub>4</sub> SURFACE.
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- Surface Review & Letters, 2004, v. 11, n. 2, p. 191, doi. 10.1142/S0218625X04006013
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- Article
A RHEED Study of MBE Growth of ZnSe on GaAs (111) A-(2 × 2).
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- Surface Review & Letters, 2003, v. 10, n. 4, p. 669, doi. 10.1142/S0218625X03005384
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- Article
RHEED Investigation of Pd/Al Bimetallic System on KCl(001) Substrate.
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- Surface Review & Letters, 1999, v. 6, n. 5, p. 825, doi. 10.1142/S0218625X9900086X
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- Article
Spotlight Topics: A Message from the Editors.
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- Surface Review & Letters, 1999, v. 6, n. 3/4, p. 449, doi. 10.1142/S0218625X99000445
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- Article
Supercell RHEED Calculations.
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- Surface Review & Letters, 1999, v. 6, n. 3/4, p. 451, doi. 10.1142/S0218625X99000457
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- Article
Interpretation of Reflection High Energy Electron Diffraction from Disordered Surfaces: Dynamical Theory and its Application to the Experiment.
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- Surface Review & Letters, 1999, v. 6, n. 3/4, p. 461, doi. 10.1142/S0218625X99000469
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- Article
RHEED from Epitaxially Grown Thin Films.
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- Surface Review & Letters, 1999, v. 6, n. 3/4, p. 497, doi. 10.1142/S0218625X99000470
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- Article
Self-assembly of Silver Nanoparticles and Multiwall Carbon Nanotubes on Decomposed GaAs Surfaces.
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- Nanoscale Research Letters, 2010, v. 5, n. 11, p. 1737, doi. 10.1007/s11671-010-9703-1
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- Article
Band structure of In chains on Si(335)--Au.
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- Materials Science (0137-1339), 2008, v. 26, n. 1, p. 55
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- Article
Nature of Growth Pits in Lead Salt Epilayers Grown by Molecular Beam Epitaxy.
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- Journal of Electronic Materials, 2009, v. 38, n. 2, p. 325, doi. 10.1007/s11664-008-0566-5
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- Article
Sub-critical InAs layers on metamorphic InGaAs for single quantum dot emission at telecom wavelengths.
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- Crystal Research & Technology, 2014, v. 49, n. 8, p. 540, doi. 10.1002/crat.201300395
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- Article
Remark to the Intensity Measurement of RHEED.
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- Instruments & Experimental Techniques, 2005, v. 48, n. 5, p. 679, doi. 10.1007/s10786-005-0122-y
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- Article
Computer studies on reflection high-energy electron diffraction from the growing surface of Ge(001).
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- Journal of Applied Crystallography, 2013, v. 46, n. 4, p. 1024, doi. 10.1107/S0021889813012995
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- Article
Terahertz emission increase in GaAs films exhibiting structural defects grown on Si (100) substrates using a two-layered LTG-GaAs buffer system.
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- Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 10, p. 13825, doi. 10.1007/s10854-021-05958-8
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- Article
Mg‐Facilitated Growth of Cubic Boron Nitride by Ion Beam‐Assisted Molecular Beam Epitaxy.
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- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 7, p. 1, doi. 10.1002/pssr.202200036
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- Article
A RHEED investigation of self-assembled GaN nanowire nucleation dynamics on bare Si and on Si covered with a thin AlN buffer layer.
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- Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 835, doi. 10.1002/pssr.201307255
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- Article
STRUCTURAL AND OPTICAL PROPERTIES OF γ-MO<sub>2</sub>N THIN FILMS DEPOSITED BY DC REACTIVE MAGNETRON SPUTTERING.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2009, v. 23, n. 23, p. 4817, doi. 10.1142/S0217979209053813
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- Article
STUDY OF STRUCTURE CHANGES ON THE Si SURFACES USING REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2004, v. 18, n. 3, p. 289, doi. 10.1142/S021797920402388X
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- Article
Electron Standing Waves at a Surface During Reflection High Energy Electron Diffraction and Application to Structure Analysis.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2000, v. 14, n. 21, p. 2171, doi. 10.1142/S0217979200002326
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- Article
Ultrafast Electron Diffraction and Microscopy: Why We Should Know About Transient Electric Fields and Where They Come From.
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- 2010
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- Abstract
MnSe -- Molecular Beam Epitaxy Growth and Optical Characterisation.
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- Acta Physica Polonica: A, 2019, v. 136, n. 4, p. 598, doi. 10.12693/APhysPolA.136.598
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- Article
Molecular Beam Epitaxy Growth of GaN/InGaN Heterostructures under In‐Bilayer Stabilized Conditions.
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- Physica Status Solidi (B), 2024, v. 261, n. 11, p. 1, doi. 10.1002/pssb.202400015
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- Article
Heteroepitaxial growth of InGaSb on GaSb/Si(111)-√3 × √3-Ga surface phase with a two-step growth method to investigate the impact of high-quality GaSb buffer layer.
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- Physica Status Solidi (B), 2017, v. 254, n. 2, p. n/a, doi. 10.1002/pssb.201600528
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- Article
Stoichiometric Control and Optical Properties of BaTiO<sub>3</sub> Thin Films Grown by Hybrid MBE.
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- Advanced Materials Interfaces, 2023, v. 10, n. 11, p. 1, doi. 10.1002/admi.202300018
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- Article
Theoretical analysis of reflection high-energy electron diffraction (RHEED) and reflection high-energy positron diffraction (RHEPD) intensity oscillations expected for the perfect layer-by-layer growth.
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- Acta Crystallographica. Section A, Foundations & Advances, 2015, v. 71, n. 5, p. 513, doi. 10.1107/S2053273315010608
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- Article
Epitaxy, exfoliation, and strain-induced magnetism in rippled Heusler membranes.
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- Nature Communications, 2024, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-22784-y
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- Article
In situ RHEED analysis of epitaxial GdO thin films grown on Si (001).
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- Applied Physics A: Materials Science & Processing, 2013, v. 110, n. 2, p. 423, doi. 10.1007/s00339-012-7231-9
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- Article
Deposition and properties of highly C-oriented GaN films on diamond substrates.
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- Applied Physics A: Materials Science & Processing, 2011, v. 102, n. 2, p. 353, doi. 10.1007/s00339-010-5991-7
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- Article
Growth mechanism, microstructure and transport properties of Sr<sub>1− x </sub>La<sub> x </sub>CuO<sub>2</sub> ( x=0.10−0.15) thin films.
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- Applied Physics A: Materials Science & Processing, 2008, v. 93, n. 3, p. 779, doi. 10.1007/s00339-008-4736-3
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- Article
Sub-unit cell layer-by-layer growth of Fe[sub 3]O[sub 4], MgO, and Sr[sub 2]RuO[sub 4] thin films.
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- Applied Physics A: Materials Science & Processing, 2003, v. 77, n. 5, p. 619, doi. 10.1007/s00339-003-2105-9
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- Article
Investigation of Si–Au vicinal surfaces using scanning tunnelling microscopy and reflection high-energy electron diffraction.
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- Journal of Microscopy, 2006, v. 224, n. 1, p. 125, doi. 10.1111/j.1365-2818.2006.01686.x
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- Article
Structure of AuSi nanoparticles on Si(111) from reflection high-energy electron diffraction and scanning tunneling microscopy.
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- European Physical Journal D (EPJ D), 2011, v. 63, n. 2, p. 225, doi. 10.1140/epjd/e2011-10604-8
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- Article
Modeling of the hysteretic phenomena in RHEED intensity variation versus temperature for GaAs and InAs surfaces.
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- Semiconductors, 2011, v. 45, n. 1, p. 91, doi. 10.1134/S1063782611010167
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- Article
A RHEED study of the transition from two-dimensional to three-dimensional growth in the InAs/GaAs system.
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- Semiconductors, 1997, v. 31, n. 10, p. 1057, doi. 10.1134/1.1187025
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- Article
Green High Energy Density Material, N[sub2]H[sub2]O.
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- Chemistry Letters, 2003, v. 32, n. 3, p. 304, doi. 10.1246/cl.2003.304
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- Article
RHEED monitoring of elastic stresses during MBE growth of group III nitride heterostructures.
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- Technical Physics Letters, 2012, v. 38, n. 5, p. 443, doi. 10.1134/S1063785012050094
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- Article
Bismuth Containing III–V Quaternary Alloy InGaAsBi Grown by MBE.
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- 2024
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- Correction Notice
Chemoheteroepitaxy of 3C‐SiC(111) on Si(111): Influence of Predeposited Ge on Structure and Composition.
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- Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 24, p. 1, doi. 10.1002/pssa.202100399
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- Article
Growth of Si on Si(1 1 1)-7×7 at room temperature under laser substrate excitation.
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- European Physical Journal - Applied Physics, 2015, v. 69, n. 1, p. 10301-p1, doi. 10.1051/epjap/2014140126
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- Article
Epitaxy, exfoliation, and strain-induced magnetism in rippled Heusler membranes.
- Published in:
- Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-22784-y
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- Publication type:
- Article
The fabrication of layer-by-layer mode LaCoO<sub>3</sub> film by pulsed laser deposition.
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- Surface & Interface Analysis: SIA, 2017, v. 49, n. 11, p. 1160, doi. 10.1002/sia.6274
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- Article