Works matching DE "RECTIFICATION (Electricity)"

Results: 258

p-Si/n-CrSe2 Heterojunctions Designed as High-Frequency Capacitors and Photosensors.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 5, p. 2591, doi. 10.1007/s11664-024-11004-0

By:

Algarni, Sabah E.;
Qasrawi, A. F.;
Khusayfan, Najla M.;
Alharbi, Seham R.;
Alfhaid, Latifah Hamad Khalid

Publication type:

Article

Gradients of Rectification: Tuning Molecular Electronic Devices by the Controlled Use of Different-Sized Diluents in Heterogeneous Self-Assembled Monolayers.

Published in:

Angewandte Chemie, 2016, v. 128, n. 35, p. 10463, doi. 10.1002/ange.201604748

By:

Kong, Gyu Don;
Kim, Miso;
Cho, Soo Jin;
Yoon, Hyo Jae

Publication type:

Article

The Mechanisms of Rectification in Au|Molecule|Au Devices Based on Langmuir-Blodgett Monolayers of Iron(III) and Copper(II) Surfactants.

Published in:

Angewandte Chemie, 2014, v. 126, n. 52, p. 14690, doi. 10.1002/ange.201408649

By:

Wickramasinghe, Lanka D.;
Mazumder, Shivnath;
Gonawala, Sunalee;
Perera, Meeghage Madusanka;
Baydoun, Habib;
Thapa, Bishnu;
Li, Li;
Xie, Lingxiao;
Mao, Guangzhao;
Zhou, Zhixian;
Schlegel, H. Bernhard;
Verani, Cláudio N.

Publication type:

Article

Rectification in Nanoscale Devices Based on an Asymmetric Five-Coordinate Iron(III) Phenolate Complex.

Published in:

Angewandte Chemie, 2013, v. 125, n. 50, p. 13588, doi. 10.1002/ange.201306765

By:

Wickramasinghe, Lanka D.;
Perera, Meeghage Madusanka;
Li, Li;
Mao, Guangzhao;
Zhou, Zhixian;
Verani, Cláudio N.

Publication type:

Article

Investigation of the temperature-dependent electrical properties of Au/PEDOT:WO3/p-Si hybrid device.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 17, p. 16676, doi. 10.1007/s10854-019-02048-8

By:

Keskin, Mine;
Akkaya, Abdullah;
Ayyıldız, Enise;
Uygun Öksüz, Ayşegül;
Özbay Karakuş, Mücella

Publication type:

Article

Dark electrical properties and photovoltaic performance of organic/inorganic (SnPcCl/p-Si) solar cells.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 8, p. 8786, doi. 10.1007/s10854-016-4903-9

By:

Darwish, A.;
El-Shazly, E.;
Attia, A.;
Abd El-Rahman, K.

Publication type:

Article

Characterization of optical quality of GaSe:Al crystals by exciton absorption peak parameters.

Published in:

Journal of Materials Science: Materials in Electronics, 2014, v. 25, n. 4, p. 1757, doi. 10.1007/s10854-014-1795-4

By:

Guo, J.;
Xie, J.-J.;
Zhang, L.-M.;
Kokh, K.;
Andreev, Yu.;
Izaak, T.;
Lanskii, G.;
Shaiduko, A.;
Svetlichnyi, V.

Publication type:

Article

Multi-ion versus single-ion conduction mechanisms can yield current rectification in biological ion channels.

Published in:

Journal of Biological Physics, 2014, v. 40, n. 2, p. 109, doi. 10.1007/s10867-013-9338-4

By:

Hilder, Tamsyn;
Corry, Ben;
Chung, Shin-Ho

Publication type:

Article

Gate‐Tunable Photovoltaic Behavior and Polarized Image Sensor Based on All‐2D TaIrTe4/MoS2 Van Der Waals Schottky Diode.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 11, p. 1, doi. 10.1002/aelm.202200551

By:

Zhang, Li;
Han, Xiaoning;
Zhang, Shihao;
Wang, Hanyu;
Huang, Ying;
Zheng, Zhaoqiang;
Huo, Nengjie;
Gao, Wei;
Li, Jingbo

Publication type:

Article

Bias‐Triggered Conductivity Switching and High Effective Rectification in Metallocene‐Based Molecular Junctions.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 9, p. 1, doi. 10.1002/aelm.202200296

By:

Asyuda, Andika;
Das, Saunak;
Lang, Heinrich;
Zojer, Egbert;
Zharnikov, Michael

Publication type:

Article

Reconfigurable InSe Electronics with van der Waals Integration.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 5, p. 1, doi. 10.1002/aelm.202101176

By:

Hu, Siqi;
Luo, Xiaoguang;
Xu, Jinpeng;
Zhao, Qinghua;
Cheng, Yingchun;
Wang, Tao;
Jie, Wanqi;
Castellanos‐Gomez, Andres;
Gan, Xuetao;
Zhao, Jianlin

Publication type:

Article

Flexible Diodes with Low Breakdown Voltage for Steep Slope Transistors and One Diode‐One Resistor Applications.

Published in:

Advanced Electronic Materials, 2022, v. 8, n. 4, p. 1, doi. 10.1002/aelm.202100961

By:

Aziz, Jamal;
Kim, Honggyun;
Rehman, Shania;
Khan, Muhammad Farooq;
Kadam, Kalyani D.;
Patil, Harshada;
Aftab, Sikandar;
Dastgeer, Ghulam;
Kim, Deok‐kee

Publication type:

Article

Charge Transfer at the Hetero‐Interface of WSe2/InSe Induces Efficient Doping to Achieve Multi‐Functional Lateral Homo‐Junctions.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 12, p. 1, doi. 10.1002/aelm.202100584

By:

Xu, Bo;
Li, Yang;
Sun, Zhao‐Yuan;
Zhao, Ze;
Yang, Li;
Gao, Feng;
Hu, Ping‐An;
Zhen, Liang;
Xu, Cheng‐Yan

Publication type:

Article

An Ultrafast Quasi‐Non‐Volatile Semi‐Floating Gate Memory with Low‐Power Optoelectronic Memory Application.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 11, p. 1, doi. 10.1002/aelm.202100564

By:

Zhou, Yu;
Ning, Jing;
Shen, Xue;
Guo, Haibin;
Zhang, Chi;
Dong, Jianguo;
Lu, Wei;
Feng, Xin;
Hao, Yue

Publication type:

Article

Charge Transfer Doping of 2D PdSe2 Thin Film and Its Application in Fabrication of Heterostructures.

Published in:

Advanced Electronic Materials, 2021, v. 7, n. 3, p. 1, doi. 10.1002/aelm.202001057

By:

Withanage, Sajeevi S.;
Chamlagain, Bhim;
Johnston, Ammon C.;
Khondaker, Saiful I.

Publication type:

Article

Tribo‐Tunneling DC Generator with Carbon Aerogel/Silicon Multi‐Nanocontacts.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900464

By:

Liu, Jun;
Cheikh, Mohamad Ibrahim;
Bao, Rima;
Peng, Huihui;
Liu, Feifei;
Li, Zhi;
Jiang, Keren;
Chen, James;
Thundat, Thomas

Publication type:

Article

All‐Oxide Thin Film Transistors and Rectifiers Enabling On‐Chip Capacitive Energy Storage.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 12, p. N.PAG, doi. 10.1002/aelm.201900531

By:

Wang, Zhenwei;
Alshammari, Fwzah H.;
Omran, Hesham;
Hota, Mrinal K.;
Al‐Jawhari, Hala A.;
Salama, Khaled N.;
Alshareef, Husam N.

Publication type:

Article

High Performance Multiwall Carbon Nanotube-Insulator-Metal Tunnel Diode Arrays for Optical Rectification.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 3, p. 1, doi. 10.1002/aelm.201700446

By:

Anderson, Erik C.;
Bougher, Thomas L.;
Cola, Baratunde A.

Publication type:

Article

Pronounced Photovoltaic Effect in Electrically Tunable Lateral Black‐Phosphorus Heterojunction Diode.

Published in:

Advanced Electronic Materials, 2018, v. 4, n. 1, p. 1, doi. 10.1002/aelm.201700442

By:

Wang, Lin;
Huang, Li;
Tan, Wee Chong;
Feng, Xuewei;
Chen, Li;
Ang, Kah‐wee

Publication type:

Article

Neuromorphic Computing: Rectification-Regulated Memristive Characteristics in Electron-Type CuPc-Based Element for Electrical Synapse (Adv. Electron. Mater. 7/2017).

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201770027

By:

Wang, Laiyuan;
Yang, Jie;
Zhu, Ying;
Yi, Mingdong;
Xie, Linghai;
Ju, Ruolin;
Wang, Zhiyong;
Liu, Lutao;
Li, Tengfei;
Zhang, Chenxi;
Chen, Yan;
Wu, Yanan;
Huang, Wei

Publication type:

Article

Next-Generation Memory: Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109 (Adv. Electron. Mater. 7/2017).

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201700152

By:

Yoon, Kyung Jean;
Kim, Gun Hwan;
Yoo, Sijung;
Bae, Woorham;
Yoon, Jung Ho;
Park, Tae Hyung;
Kwon, Dae Eun;
Kwon, Yeong Jae;
Kim, Hae Jin;
Kim, Yu Min;
Hwang, Cheol Seong

Publication type:

Article

Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 7, p. n/a, doi. 10.1002/aelm.201700152

By:

Yoon, Kyung Jean;
Kim, Gun Hwan;
Yoo, Sijung;
Bae, Woorham;
Yoon, Jung Ho;
Park, Tae Hyung;
Kwon, Dae Eun;
Kwon, Yeong Jae;
Kim, Hae Jin;
Kim, Yu Min;
Hwang, Cheol Seong

Publication type:

Article

Built‐In‐Homojunction‐Dominated Intrinsically Rectifying‐Resistive Switching in NiO Nanodots for Selection‐Device‐Free Memory Application.

Published in:

Advanced Electronic Materials, 2017, v. 3, n. 1, p. 1, doi. 10.1002/aelm.201600361

By:

Sun, Zhong;
Wei, Linlin;
Feng, Ce;
Miao, Peixian;
Guo, Meiqi;
Yang, Huaixin;
Li, Jianqi;
Zhao, Yonggang

Publication type:

Article

Formation of p-n+ diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation.

Published in:

Materials Research Letters, 2022, v. 10, n. 10, p. 666, doi. 10.1080/21663831.2022.2083457

By:

Abubakr, Eslam;
Ohmagari, Shinya;
Zkria, Abdelrahman;
Ikenoue, Hiroshi;
Pernot, Julien;
Yoshitake, Tsuyoshi

Publication type:

Article

THE IMPACT OF BIOETHANOL FUEL ON AGRICULTURAL TRACTOR ENGINE'S EXHAUST GAS.

Published in:

Agricultural Engineering, Research Papers, 2013, v. 45, n. 1, p. 33

By:

Ilves, Risto;
Sakalauskas, Antanas;
Olt, Jüri

Publication type:

Article

Nonresonant and Resonant Spin Rectification in the Exchange Biased NiFe/MnIr Bilayer.

Published in:

Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 9, p. 1, doi. 10.1002/pssr.201800178

By:

Pan, Lining;
Soh, Wee Tee;
Phuoc, Nguyen N.;
Ong, Chong Kim

Publication type:

Article

In-Ga-Zn-O MESFET with transparent amorphous Ru-Si-O Schottky barrier.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 7, p. 625, doi. 10.1002/pssr.201409124

By:

Kaczmarski, Jakub;
Grochowski, Jakub;
Kaminska, Eliana;
Taube, Andrzej;
Jung, Wojciech;
Piotrowska, Anna

Publication type:

Article

Improved high-temperature switching characteristics of Y2O3/TiO x resistive memory through carrier depletion effect.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 5, p. 431, doi. 10.1002/pssr.201409039

By:

Zheng, Zhi‐Wei;
Hsu, Hsiao‐Hsuan;
Cheng, Chun‐Hu;
Chen, Po‐Chun

Publication type:

Article

IMPROVING THE RECTIFICATION OF OPTICAL DEVICES WITH LASER POINTERS.

Published in:

Military Technical Courier / Vojnotehnicki Glasnik, 2017, v. 65, n. 4, p. 994, doi. 10.5937/vojtehg65-13202

By:

Radonjić, Vojkan M.;
Resimić, Branko V.

Publication type:

Article

Electronic Structure Contributions to Molecular Rectification.

Published in:

New Mexico Journal of Science, 2017, v. 51, n. 1, p. 52

By:

DANGI, RANJANA

Publication type:

Article

New insights into molecular rectification.

Published in:

New Mexico Journal of Science, 2016, v. 50, n. 1, p. 65

By:

DANGI, RANJANA

Publication type:

Article

Molecular rectification behavior of the pyranopterin ligand of molybdoenzymes.

Published in:

New Mexico Journal of Science, 2016, v. 50, n. 1, p. 64

By:

INGERSOL, LAURA

Publication type:

Article

A useful model to interpret the experimental I-V-T and C-V-T data of spatially inhomogeneous metal-semiconductor rectifying contacts.

Published in:

Australian Journal of Electrical & Electronic Engineering, 2020, v. 17, n. 4, p. 278, doi. 10.1080/1448837X.2020.1857564

By:

Asubay, Sezai;
Turut, Abdulmecit

Publication type:

Article

Large-Signal DG-MOSFET Modelling for RFID Rectification.

Published in:

Advances in Condensed Matter Physics, 2016, p. 1, doi. 10.1155/2016/8017139

By:

Rodríguez, R.;
González, B.;
García, J.;
Lázaro, A.;
Iñiguez, B.;
Hernández, A.

Publication type:

Article

Analysis of current–voltage and capacitance–voltage characteristics of Zr/p-Si Schottky diode with high series resistance.

Published in:

Modern Physics Letters B, 2020, v. 34, n. 10, p. N.PAG, doi. 10.1142/S0217984920500955

By:

Aldemir, Durmuş Ali

Publication type:

Article

Rectification in zigzag graphene/BN nanoribbon heterojunction.

Published in:

Modern Physics Letters B, 2018, v. 32, n. 32, p. N.PAG, doi. 10.1142/S0217984918503955

By:

Bian, Baoan;
Yang, Jingjuan;
Han, Xiaoxiao;
Yuan, Peipei;
Ding, Yuqiang

Publication type:

Article

A SELF-RECTIFYING BIPOLAR RRAM DEVICE BASED ON /2/n+- STRUCTURE.

Published in:

Modern Physics Letters B, 2014, v. 28, n. 4, p. -1, doi. 10.1142/S0217984914500304

By:

LI, YINGTAO;
JIANG, XINYU;
TAO, CHUNLAN

Publication type:

Article

Electronic transport and photoelectric properties of WTe2-MoTe2 heterostructure transistor: Electronic transport and photoelectric...: A. Horri et al.

Published in:

Optical & Quantum Electronics, 2025, v. 57, n. 2, p. 1, doi. 10.1007/s11082-024-08034-7

By:

Horri, Ashkan;
Solimannejad, Mohammad;
Rahimi, Rezvan

Publication type:

Article

Nonlinear optical rectification of tuned quantum dots under the action of a vertical magnetic field.

Published in:

Optical & Quantum Electronics, 2022, v. 54, n. 9, p. 1, doi. 10.1007/s11082-022-03925-z

By:

Zhao, Zhuang;
Li, Xuechao;
Duan, Yiming;
Chang, Ceng;
Zhang, Liangcheng

Publication type:

Article

Correction to: Optical rectification coefficient in an oxide quantum dot with different confinement potentials.

Published in:

2018

By:

Peter, A. John;
Karthikeyan, N.;
Lee, Chang Woo

Publication type:

Correction Notice

Optical rectification coefficient in an oxide quantum dot with different confinement potentials.

Published in:

Optical & Quantum Electronics, 2018, v. 50, n. 6, p. 1, doi. 10.1007/s11082-018-1497-x

By:

Peter, A. John;
Karthikeyan, N.;
Woo, Chang Woo

Publication type:

Article

Tailoring nonlinear optical rectification coefficient of impurity doped quantum dots by invoking Gaussian white noise.

Published in:

Optical & Quantum Electronics, 2016, v. 48, n. 8, p. 1, doi. 10.1007/s11082-016-0640-9

By:

Pal, Suvajit;
Ghosh, Manas

Publication type:

Article

Erratum to: Isoform- and receptor-specific channel property of canonical transient receptor potential (TRPC)1/4 channels.

Published in:

2014

By:

Kim, Jinsung;
Kwak, Misun;
Jeon, Jae-Pyo;
Myeong, Jongyun;
Wie, Jinhong;
Hong, Chansik;
Kim, Sung-Young;
Jeon, Ju-Hong;
Kim, Hyun;
So, Insuk

Publication type:

Correction Notice

Modeling and Control of Laptop Computer Voltage Regulator Module with Multiple Power Sources.

Published in:

Journal Européen des Systèmes Automatisés, 2020, v. 53, n. 3, p. 421, doi. 10.18280/jesa.530313

By:

Yadlapalli, Ravindranath Tagore;
Kotapati, Anuradha

Publication type:

Article

Wave-particle duality revitalized: Rectifications, verifications, and applications.

Published in:

Physics Essays, 2013, v. 26, n. 2, p. 251, doi. 10.4006/0836-1398-26.2.251

By:

Chauhan, Himanshu;
Rawal, Swati;
Sinha, R. K.

Publication type:

Article

Ion transport and current rectification in a charged conical nanopore filled with viscoelastic fluids.

Published in:

Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-06079-w

By:

Trivedi, Mohit;
Nirmalkar, Neelkanth

Publication type:

Article

Supercurrent diode effect and magnetochiral anisotropy in few-layer NbSe2.

Published in:

Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-31954-5

By:

Bauriedl, Lorenz;
Bäuml, Christian;
Fuchs, Lorenz;
Baumgartner, Christian;
Paulik, Nicolas;
Bauer, Jonas M.;
Lin, Kai-Qiang;
Lupton, John M.;
Taniguchi, Takashi;
Watanabe, Kenji;
Strunk, Christoph;
Paradiso, Nicola

Publication type:

Article

On-chip integrated process-programmable sub-10 nm thick molecular devices switching between photomultiplication and memristive behaviour.

Published in:

Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-30498-y

By:

Li, Tianming;
Hantusch, Martin;
Qu, Jiang;
Bandari, Vineeth Kumar;
Knupfer, Martin;
Zhu, Feng;
Schmidt, Oliver G.

Publication type:

Article

Superconducting spintronic tunnel diode.

Published in:

Nature Communications, 2022, v. 13, n. 1, p. 1, doi. 10.1038/s41467-022-29990-2

By:

Strambini, E.;
Spies, M.;
Ligato, N.;
Ilić, S.;
Rouco, M.;
González-Orellana, Carmen;
Ilyn, Maxim;
Rogero, Celia;
Bergeret, F. S.;
Moodera, J. S.;
Virtanen, P.;
Heikkilä, T. T.;
Giazotto, F.

Publication type:

Article

Unidirectional ion transport in nanoporous carbon membranes with a hierarchical pore architecture.

Published in:

Nature Communications, 2021, v. 12, n. 1, p. 1, doi. 10.1038/s41467-021-24947-3

By:

Chen, Lu;
Tu, Bin;
Lu, Xubin;
Li, Fan;
Jiang, Lei;
Antonietti, Markus;
Xiao, Kai

Publication type:

Article