Works matching DE "RECOMBINATION in semiconductors"

Results: 135

SECCIÓN EFICAZ ELEY-RIDEAL EN LA RECOMBINACIÓN DE NITRÓGENO SOBRE TUNGSTENO (100).

Published in:

Revista Cubana de Física, 2011, v. 28, n. 1E, p. 1E61

By:

Barrios-Herrera, Lizandra;
Quintas-Sánchez, Ernesto;
Martin-Gondre, L.;
Larrégaray, P.;
Crespos, C.;
Rubayo-Soneira, J.;
Rayez, J-C.

Publication type:

Article

Dependencia térmica de la corriente umbral en láseres semiconductores a pozo cuántico.

Published in:

Revista Cubana de Física, 2009, v. 26, n. 1, p. 83

By:

Sánchez, M.;
Rojas, N. Suárez;
Martin, J. A.;
Mon, Elis

Publication type:

Article

Effective way to realize optimized carrier recombination and electrode contact for excellent electrical performance silicon nanostructure based solar cells.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 5, p. 4378, doi. 10.1007/s10854-016-4307-x

By:

Wang, Shaomeng;
Li, Qiang;
Tao, Ke;
Jia, Rui;
Jiang, Shuai;
Wang, Deliang;
Dong, Hongwei

Publication type:

Article

Surface states simulation model for photoconductors infrared detectors.

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 400, doi. 10.1007/s10854-008-9642-0

By:

Kouissa, S.;
Aida, M. S.;
Djemel, A.

Publication type:

Article

Temperature insensitive quantum dot lasers: are we really there yet?

Published in:

Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 272, doi. 10.1007/s10854-008-9574-8

By:

Massé, N. F.;
Marko, I. P.;
Adams, A. R.;
Sweeney, S. J.

Publication type:

Article

Dynamical study of the radiative recombination processes in GaN/AlGaN QWs.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 316, doi. 10.1007/s10854-008-9672-7

By:

Sabooni, Mahmood;
Esmaeili, Morteza;
Haratizadeh, Hamid;
Monemar, Bo;
Amano, Hiroshi

Publication type:

Article

Effect of point defects on the recombination activity of copper precipitates in p-type Czochralski silicon.

Published in:

Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 32, doi. 10.1007/s10854-007-9507-y

By:

Weiyan Wang;
Deren Yang;
Xuegong Yu;
Duanlin Que

Publication type:

Article

A three-fluid approach in bipolar semiconductors with generation-recombination: constitutive laws and Onsager symmetry.

Published in:

Continuum Mechanics & Thermodynamics, 2016, v. 28, n. 6, p. 1671, doi. 10.1007/s00161-016-0500-7

By:

Rossani, A.

Publication type:

Article

Measurement of lifetime of nonequilibrium charge carriers in single-crystal silicon.

Published in:

Inorganic Materials, 2015, v. 51, n. 15, p. 1447, doi. 10.1134/S0020168515150029

By:

Anfimov, I.;
Kobeleva, S.;
Shchemerov, I.

Publication type:

Article

Recombination processes in solution-grown CdSe1− x Te x films.

Published in:

Inorganic Materials, 2007, v. 43, n. 3, p. 233, doi. 10.1134/S0020168507030041

By:

Abdinov, A.;
Jafarov, M.;
Mamedova, S.

Publication type:

Article

Photoluminescence dynamics of organic molecule-passivated Si nanoclusters.

Published in:

European Physical Journal D (EPJ D), 2011, v. 63, n. 2, p. 289, doi. 10.1140/epjd/e2011-10513-x

By:

Imamura, M.;
Nakamura, J.;
Fujimasa, S.;
Yasuda, H.;
Kobayashi, H.;
Negishi, Y.

Publication type:

Article

The effect of annealing ambient on carrier recombination in boron implanted silicon.

Published in:

Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 10, p. 827, doi. 10.1002/pssr.201409295

By:

Ratcliff, Thomas;
Fong, Kean Chern;
Shalav, Avi;
Elliman, Robert;
Blakers, Andrew

Publication type:

Article

A small spiking neural network with LQR control applied to the acrobot.

Published in:

Neural Computing & Applications, 2009, v. 18, n. 4, p. 369, doi. 10.1007/s00521-008-0187-1

By:

Wiklendt, Lukasz;
Chalup, Stephan;
Middleton, Rick

Publication type:

Article

Two-pulse two-photon optical nutation of biexcitons in semiconductors.

Published in:

Optics & Spectroscopy, 2008, v. 104, n. 3, p. 351, doi. 10.1134/S0030400X08030077

By:

Khadzhi, P. I.;
Vasil'ev, V. V.

Publication type:

Article

Specifics of recombination processes in pyrolytic cadmium sulfide films.

Published in:

High Energy Chemistry, 2009, v. 43, n. 7, p. 599, doi. 10.1134/S0018143909070170

By:

Maiorova, T. L.;
Kluev, V. G.;
Fam Thi Khai, M.;
Bykovskaya, V. S.

Publication type:

Article

Relaxation processes in silicon heterojunction solar cells probed via noise spectroscopy.

Published in:

Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-92866-w

By:

Davenport, Kevin;
Trinh, C. T.;
Hayward, Mark;
Lips, Klaus;
Rogachev, Andrey

Publication type:

Article

Determination of bulk and surface transport properties by photocurrent spectral measurements.

Published in:

Applied Physics A: Materials Science & Processing, 2000, v. 71, n. 3, p. 305, doi. 10.1007/s003390000528

By:

Castaldini, A.;
Cavalcoli, D.;
Cavallini, A.

Publication type:

Article

Recombination dynamics of traps in SiO[sub 2] layer on Si by scanning capacitance microscopy.

Published in:

Applied Physics A: Materials Science & Processing, 1998, v. 66, n. 7, p. S415, doi. 10.1007/s003390051174

By:

Kang, C.J.;
Kim, C.K.;
Kuk, Y.;
Williams, C.C.

Publication type:

Article

Kinetic Modelling of the Plasma Recombination.

Published in:

Contributions to Plasma Physics, 2016, v. 56, n. 6-8, p. 698, doi. 10.1002/ctpp.201611004

By:

Tskhakaya, D.

Publication type:

Article

Detailed Analysis of Plasma Resistivity in Detached Recombining Plasmas.

Published in:

Contributions to Plasma Physics, 2016, v. 56, n. 6-8, p. 717, doi. 10.1002/ctpp.201610053

By:

Nishikata, H.;
Hayashi, Y.;
Ohno, N.;
Kajita, S.;
Kuwabara, T.

Publication type:

Article

Electrical Breakdown in Pure n- and p-Si.

Published in:

Semiconductors, 2018, v. 52, n. 3, p. 273, doi. 10.1134/S1063782618030065

By:

Bannaya, V. F.;
Nikitina, E. V.

Publication type:

Article

Interface recombination velocity measurement in SiO/Si.

Published in:

Semiconductors, 2014, v. 48, n. 3, p. 302, doi. 10.1134/S1063782614030130

By:

Ilahi, S.;
Yacoubi, N.

Publication type:

Article

Simulation of ultraviolet- and soft X-ray-pulse generation as a result of cooperative recombination of excitons in diamond nanocrystals embedded in a polymer film.

Published in:

Semiconductors, 2013, v. 47, n. 11, p. 1442, doi. 10.1134/S1063782613110122

By:

Kukushkin, V.

Publication type:

Article

Radiative recombination of hot carriers in narrow-gap semiconductors.

Published in:

Semiconductors, 2012, v. 46, n. 1, p. 29, doi. 10.1134/S1063782612010162

By:

Pavlov, N.;
Zegrya, G.

Publication type:

Article

Capture of charge carriers and output power of a quantum well laser.

Published in:

Semiconductors, 2011, v. 45, n. 11, p. 1494, doi. 10.1134/S1063782611110261

By:

Sokolova, Z.;
Tarasov, I.;
Asryan, L.

Publication type:

Article

Effect of temperature on the electroluminescent properties of mid-IR (λ ≈ 4.4 μm) flip-chip LEDs based on an InAs/InAsSbP heterostructure.

Published in:

Semiconductors, 2011, v. 45, n. 11, p. 1501, doi. 10.1134/S1063782611110200

By:

Petuhov, A.;
Il'inskaya, N.;
Kizhaev, S.;
Stoyanov, N.;
Yakovlev, Yu.

Publication type:

Article

Edge photoluminescence of single-crystal silicon with a p-n junction: Structures produced by high-efficiency solar cell technology.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 805, doi. 10.1134/S1063782611060091

By:

Emel'yanov, A.

Publication type:

Article

Features of dynamic acoustically induced modification of photovoltaic parameters of silicon solar cells.

Published in:

Semiconductors, 2011, v. 45, n. 6, p. 798, doi. 10.1134/S1063782611060170

By:

Olikh, O.

Publication type:

Article

Photoconductivity of pyrolytic CdS films alloyed with Cs.

Published in:

Semiconductors, 2011, v. 45, n. 5, p. 567, doi. 10.1134/S1063782611050204

By:

Maiorova, T.;
Kluyev, V.;
Samofalova, T.

Publication type:

Article

Current-voltage characteristics of ZnGaSe compound polycrystals.

Published in:

Semiconductors, 2011, v. 45, n. 1, p. 52, doi. 10.1134/S1063782611010209

By:

Tagiev, B.;
Tagiev, O.;
Asadullayeva, S.

Publication type:

Article

Measurement of surface recombination velocity and bulk lifetime in Si wafers by the kinetics of excess thermal emission.

Published in:

Semiconductors, 2011, v. 45, n. 1, p. 61, doi. 10.1134/S1063782611010246

By:

Zinovchuk, A.;
Tkachenko, A.

Publication type:

Article

Specific features of implementation of the photoconductivity decay method in measurements of recombination parameters of a semiconductor.

Published in:

Semiconductors, 2010, v. 44, n. 13, p. 1723, doi. 10.1134/S106378261013021X

By:

Shadov, M.

Publication type:

Article

Numerical simulation of time-dependent geminate recombination in polymers.

Published in:

Semiconductors, 2010, v. 44, n. 7, p. 912, doi. 10.1134/S1063782610070146

By:

Korolev, N. A.;
Nikitenko, V. R.;
Tyutnev, A. P.

Publication type:

Article

Mechanism of forward current transport in modified-surface Au-CdTe photodiodes.

Published in:

Semiconductors, 2009, v. 43, n. 5, p. 602, doi. 10.1134/S106378260905011X

By:

Makhnij, V. P.;
Bojko, Yu. N.;
Skrypnyk, N. V.

Publication type:

Article

Recombination processes in pyrolytic cadmium sulfide films.

Published in:

Semiconductors, 2009, v. 43, n. 3, p. 292, doi. 10.1134/S1063782609030063

By:

Maiorova, T. L.;
Klyuev, V. G.

Publication type:

Article

Wave functions of hot excitons in semiconductors with degenerate bands.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 642, doi. 10.1134/S106378260806002X

By:

Efanov, A. V.

Publication type:

Article

Charge-carrier concentration and temperature in quantum wells of laser heterostructures under spontaneous-and stimulated-emission conditions.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 737, doi. 10.1134/S1063782608060171

By:

Vorob'ev, L. E.;
Zerova, V. L.;
Borshchev, K. S.;
Sokolova, Z. N.;
Tarasov, I. S.;
Belenky, G.

Publication type:

Article

Relaxation of parameters of thin-film electroluminescent ZnS:Mn-based structures when turned off.

Published in:

Semiconductors, 2008, v. 42, n. 6, p. 675, doi. 10.1134/S1063782608060080

By:

Gurin, N. T.;
Sabitov, O. Yu.

Publication type:

Article

The effect of narrowing of the band gap on surface recombination in silicon.

Published in:

Semiconductors, 2007, v. 41, n. 6, p. 673, doi. 10.1134/S1063782607060115

By:

Sachenko, A.;
Sokolovsky, I.

Publication type:

Article

Mechanisms of recombination of nonequilibrium charge carriers in epitaxial CdxHg1− x Te ( x = 0.20–0.23) layers.

Published in:

Semiconductors, 2007, v. 41, n. 2, p. 130, doi. 10.1134/S1063782607020029

By:

Ikusov, D. G.;
Sizov, F. F.;
Staryi, S. V.;
Teterkin, V. V.

Publication type:

Article

Tunneling recombination in spatially inhomogeneous structures.

Published in:

Semiconductors, 2006, v. 40, n. 5, p. 570, doi. 10.1134/S1063782606050101

By:

Grushko, N. S.;
Loginova, E. A.;
Potanakhina, L. N.

Publication type:

Article

The effect of oxidation on the efficiency and spectrum of photoluminescence of porous silicon.

Published in:

Semiconductors, 2006, v. 40, n. 5, p. 598, doi. 10.1134/S1063782606050150

By:

Bulakh, B. M.;
Korsunska, N.;
Khomenkova, L. Yu.;
Staraya, T. R.;
Sheĭnkman, M. K.

Publication type:

Article

Electroluminescence in porous silicon at a reverse bias voltage applied to the Schottky barrier.

Published in:

Semiconductors, 2006, v. 40, n. 2, p. 234, doi. 10.1134/S1063782606020229

By:

Berashevich, J. A.;
Lazarouk, S. K.;
Borisenko, V. E.

Publication type:

Article

Recombination Mechanism of the Piezophotoresistive Effect in Compensated Semiconductors.

Published in:

Semiconductors, 2005, v. 39, n. 6, p. 658, doi. 10.1134/1.1944855

By:

Pavlyshenko, B. M.;
Shuvar, R. Ya.

Publication type:

Article

Intermediate Band Solar Cells: Comparison with Shockley–Read–Hall Recombination.

Published in:

Semiconductors, 2004, v. 38, n. 8, p. 946, doi. 10.1134/1.1787117

By:

Martis, A.;
Cuadra, L.;
Lopez, N.;
Luque, A.

Publication type:

Article

A Study of Recombination Centers in Irradiated p-Si Crystals.

Published in:

Semiconductors, 2004, v. 38, n. 6, p. 639, doi. 10.1134/1.1766363

By:

Pagava, T.A.

Publication type:

Article

Recombination Statistics and Kinetics in Semiconductor Nanostructures.

Published in:

Semiconductors, 2004, v. 38, n. 1, p. 99, doi. 10.1134/1.1641140

By:

Sachenko, A.V.;
Kryuchenko, Yu.V.

Publication type:

Article

Vladimir Idelevich Perel’ (On His 75th Birthday).

Published in:: Semiconductors, 2003, v. 37, n. 12, p. 1430, doi. 10.1134/1.1634668
Publication type:: Article

Size Effect in Two-Photon Absorption of Recombination Radiation in Graded-Gap Alx Ga1-x As Solid Solutions.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 38, doi. 10.1134/1.1538536

By:

Kovalenko, V.F.;
Shutov, S.V.

Publication type:

Article

Tunneling Recombination in Silicon Avalanche Diodes.

Published in:

Semiconductors, 2003, v. 37, n. 1, p. 115

By:

Bulyarski&icaron;, S.V.;
Ionychev, V.K.;
Kuz'min, V.V.

Publication type:

Article