Works matching DE "RECOMBINATION in semiconductors"
Results: 134
Radiative exciton recombination dynamics in QD-tagged polystyrene microspheres.
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- Journal of Materials Science, 2012, v. 47, n. 1, p. 374, doi. 10.1007/s10853-011-5808-x
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A practical model for the determination of transport parameters in semiconductors.
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- Journal of Materials Science, 2011, v. 46, n. 24, p. 7799, doi. 10.1007/s10853-011-5760-9
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Photoluminescence properties of pyrolytic boron nitride.
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- Journal of Materials Science, 2009, v. 44, n. 10, p. 2560, doi. 10.1007/s10853-009-3334-x
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Multi-layer ambipolar light-emitting organic field-effect transistors.
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- Applied Physics B: Lasers & Optics, 2012, v. 106, n. 2, p. 425, doi. 10.1007/s00340-011-4722-x
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Passivation of Silicon Surface by Laser Rapid Heating.
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- Journal of Laser Micro / Nanoengineering, 2014, v. 9, n. 2, p. 143, doi. 10.2961/jlmn.2014.02.0012
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Thermoluminescence (TL) characterization of the perovskite-like KMgF<sub>3</sub>, activated by Lu impurity.
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- Journal of Materials Science, 2004, v. 39, n. 5, p. 1601
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FTIRS study of porous silicon at different oxidation stages.
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- Journal of Materials Science, 1999, v. 34, n. 13, p. 3067, doi. 10.1023/A:1004688613686
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Non-blinking semiconductor nanocrystals.
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- Nature, 2009, v. 459, n. 7247, p. 686, doi. 10.1038/nature08072
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Tunneling Radiative Recombination in p–n Heterostructures Based on Gallium Nitride and Other A[sup III]B[sup V] Semiconductor Compounds.
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- Journal of Experimental & Theoretical Physics, 2003, v. 97, n. 5, p. 1015, doi. 10.1134/1.1633958
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Generalized Model of Recombination in Inhomogeneous Semiconductor Structures.
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- Journal of Experimental & Theoretical Physics, 2000, v. 91, n. 5, p. 1059, doi. 10.1134/1.1334996
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Mechanisms of Auger recombination in quantum wells.
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- Journal of Experimental & Theoretical Physics, 1998, v. 86, n. 4, p. 815, doi. 10.1134/1.558544
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Recombination Processes in PbWO<sub>4</sub>:Tb<sub>3+</sub> Crystals.
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- Acta Physica Polonica: A, 2010, v. 117, n. 1, p. 143, doi. 10.12693/APhysPolA.117.143
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Small-signal parameters of quantum dash lasers with multiple coupled energy states.
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- Optical Engineering, 2010, v. 49, n. 11, p. 114202, doi. 10.1117/1.3509369
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- Article
The detrimental effect of AlGaN barrier quality on carrier dynamics in AlGaN/GaN interface.
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- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-53732-y
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Kinetic Modelling of the Plasma Recombination.
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- Contributions to Plasma Physics, 2016, v. 56, n. 6-8, p. 698, doi. 10.1002/ctpp.201611004
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Detailed Analysis of Plasma Resistivity in Detached Recombining Plasmas.
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- Contributions to Plasma Physics, 2016, v. 56, n. 6-8, p. 717, doi. 10.1002/ctpp.201610053
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A New Model of Multiphonon Excitation Trap-Assisted Band-to-Band Tunneling.
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- Radioengineering, 2012, v. 21, n. 1, p. 213
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Matrix Isolation of H Atoms at Low Temperatures.
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- Journal of Low Temperature Physics, 2011, v. 162, n. 3/4, p. 105, doi. 10.1007/s10909-010-0302-4
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CuZnSnSe nanocrystals capped with S by ligand exchange: utilizing energy level alignment for efficiently reducing carrier rec ombination.
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- Nanoscale Research Letters, 2014, v. 9, n. 1, p. 1, doi. 10.1186/1556-276X-9-262
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Simulation and Experimental Study of Photogeneration and Recombination in Amorphous-Like Silicon Thin Films Deposited by 27.12MHz Plasma-Enhanced Chemical Vapor Deposition.
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- International Journal of Photoenergy, 2013, p. 1, doi. 10.1155/2013/698026
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Charge-Carrier Transport in Thin Film Solar Cells: New Formulation.
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- International Journal of Photoenergy, 2011, p. 1, doi. 10.1155/2011/976063
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- Article
Strained and Unstrained Layer Superlattices for Infrared Detection.
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- Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1800, doi. 10.1007/s11664-009-0757-8
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The Effect of Wet Etching on Surface Properties of HgCdTe.
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- Journal of Electronic Materials, 2009, v. 38, n. 8, p. 1781, doi. 10.1007/s11664-009-0844-x
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Modeling of Recombination in HgCdTe.
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- Journal of Electronic Materials, 2008, v. 37, n. 9, p. 1415, doi. 10.1007/s11664-008-0417-4
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- Article
Temperature insensitive quantum dot lasers: are we really there yet?
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 272, doi. 10.1007/s10854-008-9574-8
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Surface states simulation model for photoconductors infrared detectors.
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- Journal of Materials Science: Materials in Electronics, 2009, v. 20, p. 400, doi. 10.1007/s10854-008-9642-0
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Dynamical study of the radiative recombination processes in GaN/AlGaN QWs.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 316, doi. 10.1007/s10854-008-9672-7
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Effect of point defects on the recombination activity of copper precipitates in p-type Czochralski silicon.
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- Journal of Materials Science: Materials in Electronics, 2008, v. 19, p. 32, doi. 10.1007/s10854-007-9507-y
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The role of spin in the kinetic control of recombination in organic photovoltaics.
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- Nature, 2013, v. 500, n. 7463, p. 435, doi. 10.1038/nature12339
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Challenges facing copper‐plated metallisation for silicon photovoltaics: Insights from integrated circuit technology development.
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- Progress in Photovoltaics, 2019, v. 27, n. 1, p. 67, doi. 10.1002/pip.3062
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Temperature dependence of photoluminescence from ordered GaInP2epitaxial layers.
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- Crystal Research & Technology, 2010, v. 45, n. 1, p. 79
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Recombination Waves in Dusty Plasma of a Non-Self-Sustained Discharge.
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- High Temperature, 2018, v. 56, n. 5, p. 632, doi. 10.1134/S0018151X18050048
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Geminate Recombination in the Presence of Scavengers: The New Vision of the Old Problem.
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- Physics Research International, 2011, p. 1, doi. 10.1155/2011/451670
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Silicon photonics: Nanocavity brightens silicon.
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- Nature Photonics, 2013, v. 7, n. 4, p. 264, doi. 10.1038/nphoton.2013.65
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Electrical Breakdown in Pure n- and p-Si.
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- Semiconductors, 2018, v. 52, n. 3, p. 273, doi. 10.1134/S1063782618030065
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Interface recombination velocity measurement in SiO/Si.
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- Semiconductors, 2014, v. 48, n. 3, p. 302, doi. 10.1134/S1063782614030130
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Simulation of ultraviolet- and soft X-ray-pulse generation as a result of cooperative recombination of excitons in diamond nanocrystals embedded in a polymer film.
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- Semiconductors, 2013, v. 47, n. 11, p. 1442, doi. 10.1134/S1063782613110122
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Radiative recombination of hot carriers in narrow-gap semiconductors.
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- Semiconductors, 2012, v. 46, n. 1, p. 29, doi. 10.1134/S1063782612010162
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Capture of charge carriers and output power of a quantum well laser.
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- Semiconductors, 2011, v. 45, n. 11, p. 1494, doi. 10.1134/S1063782611110261
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Effect of temperature on the electroluminescent properties of mid-IR (λ ≈ 4.4 μm) flip-chip LEDs based on an InAs/InAsSbP heterostructure.
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- Semiconductors, 2011, v. 45, n. 11, p. 1501, doi. 10.1134/S1063782611110200
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Effective way to realize optimized carrier recombination and electrode contact for excellent electrical performance silicon nanostructure based solar cells.
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- Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 5, p. 4378, doi. 10.1007/s10854-016-4307-x
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An efficient algorithm for optimizing the electrical performance of HBTs.
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- International Journal of Numerical Modelling, 2003, v. 16, n. 4, p. 353, doi. 10.1002/jnm.504
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Relaxation processes in silicon heterojunction solar cells probed via noise spectroscopy.
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- Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-92866-w
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- Article
The effect of annealing ambient on carrier recombination in boron implanted silicon.
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- Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 10, p. 827, doi. 10.1002/pssr.201409295
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SECCIÓN EFICAZ ELEY-RIDEAL EN LA RECOMBINACIÓN DE NITRÓGENO SOBRE TUNGSTENO (100).
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- Revista Cubana de Física, 2011, v. 28, n. 1E, p. 1E61
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Dependencia térmica de la corriente umbral en láseres semiconductores a pozo cuántico.
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- Revista Cubana de Física, 2009, v. 26, n. 1, p. 83
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- Article
The effect of thermal treatment on the charge-carrier lifetime in nickel-doped silicon.
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- Russian Physics Journal, 2006, v. 49, n. 2, p. 183, doi. 10.1007/s11182-006-0085-x
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Magnetic Properties of Nd<sub>12</sub>Fe<sub>82</sub>B<sub>6</sub> and Nd<sub>14</sub>Fe<sub>80</sub>B<sub>6</sub> Powders Obtained by High Temperature Milling.
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- Acta Physica Polonica: A, 2012, v. 121, n. 1, p. 89, doi. 10.12693/APhysPolA.121.89
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Gain Spectrum for the In<sub>4</sub>Se<sub>3</sub> Crystal with a Non-Standard Dispersion Law of Charge Carriers.
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- Acta Physica Polonica: A, 2011, v. 119, n. 5, p. 720, doi. 10.12693/APhysPolA.119.720
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Magnetoluminescence of a CdTe Quantum Dot with a Single Manganese Ion in Voigt Configuration.
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- Acta Physica Polonica: A, 2011, v. 119, n. 5, p. 618, doi. 10.12693/APhysPolA.119.618
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