Works matching DE "RANDOM access memory -- Design %26 construction"

Results: 10

Dual damascene aluminum for 1-Gbit DRAMs.

Published in:

Solid State Technology, 1998, v. 41, n. 11, p. 37

By:

Clevenger, Larry;
Costrini, Greg;
Dobuzinsky, David;
Filippi, Ronald;
Gambino, Jeff;
Lin, Chenting;
Schnabel, Florian;
Weber, Stefan;
Gignac, Lynne;
Ronay, Maria

Publication type:

Article

RELIABLE PZT CMP TECHNOLOGY FOR NOVEL FRAM CAPACITORS.

Published in:

Integrated Ferroelectrics, 2006, v. 84, n. 1, p. 147, doi. 10.1080/10584580601085594

By:

CHOI, S. H.;
KO, H. Y.;
HEO, J. E.;
SON, Y. H.;
BAE, B. J.;
YOO, D. C.;
IM, D. H.;
JUNG, Y. J.;
BYUN, K. R;
HAHM, J. H.;
SHIN, S. H.;
YOON, B. U.;
HONG, C. K.;
CHO, H. K.;
MOON, J. T.

Publication type:

Article

PROPERTIES OF NEODYMIUM-DOPED Bi4Ti3O12 THIN FILMS FOR FERROELECTRIC RANDOM ACCESS MEMORY.

Published in:

Integrated Ferroelectrics, 2006, v. 84, n. 1, p. 67, doi. 10.1080/10584580601085230

By:

XIE, DAN;
ZHANG, ZHIGANG;
REN, TIANLING;
LIU, TIANZHI;
DONG, YAQI;
LIU, LITIAN

Publication type:

Article

Quantum computing: Quantum RAM.

Published in:

Nature, 2010, v. 468, n. 7320, p. 44, doi. 10.1038/468044a

By:

Blencowe, Miles

Publication type:

Article

High-Speed and Area-Efficient Reconfigurable Multiplexer Bank for RAM-Based Finite State Machine Implementations.

Published in:

Journal of Circuits, Systems & Computers, 2015, v. 24, n. 7, p. -1, doi. 10.1142/S0218126615501017

By:

Senhadji-Navaro, Raouf;
Garcia-Vargas, Ignacio

Publication type:

Article

Engineering oxide resistive switching materials for memristive device application.

Published in:

Applied Physics A: Materials Science & Processing, 2011, v. 102, n. 4, p. 991, doi. 10.1007/s00339-011-6331-2

By:

Liu, Lifeng;
Chen, Bing;
Gao, Bin;
Zhang, Feifei;
Chen, Yuansha;
Liu, Xiaoyan;
Wang, Yi;
Han, Ruqi;
Kang, Jinfeng

Publication type:

Article

Dielectric investigations in Sr0.75Ba0.25Nb2O6 relaxor ferroelectric thin films.

Published in:

Applied Physics A: Materials Science & Processing, 2009, v. 95, n. 3, p. 757, doi. 10.1007/s00339-008-5060-7

By:

Santos, I. A.;
Mendes, R. G.;
Eiras, J. A.;
de Los S. Guerra, J.;
Araújo, E. B.

Publication type:

Article

A novel POMDP-based server RAM caching algorithm for VoD systems.

Published in:

Multimedia Tools & Applications, 2018, v. 77, n. 10, p. 13023, doi. 10.1007/s11042-017-4930-4

By:

Yin, Baoqun;
Cao, Jie;
Kang, Yu;
Lu, Xiaonong;
Jiang, Xiaofeng

Publication type:

Article

Bipolar Resistive Switching Properties of Hf0.5Zr0.5O2 Thin Film for Flexible Memory Applications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 1, p. 1, doi. 10.1002/pssa.201700396

By:

Wu, Zhipeng;
Zhu, Jun;
Zhou, Yunxia;
Liu, Xingpeng

Publication type:

Article

Data storage: Multiferroic memories.

Published in:

2007

By:

Scott, J. F.

Publication type:

Editorial

Works matching DE "RANDOM access memory -- Design %26 construction"

Dual damascene aluminum for 1-Gbit DRAMs.

RELIABLE PZT CMP TECHNOLOGY FOR NOVEL FRAM CAPACITORS.

PROPERTIES OF NEODYMIUM-DOPED Bi4Ti3O12 THIN FILMS FOR FERROELECTRIC RANDOM ACCESS MEMORY.

Quantum computing: Quantum RAM.

High-Speed and Area-Efficient Reconfigurable Multiplexer Bank for RAM-Based Finite State Machine Implementations.

Engineering oxide resistive switching materials for memristive device application.

Dielectric investigations in Sr<sub>0.75</sub>Ba<sub>0.25</sub>Nb<sub>2</sub>O<sub>6</sub> relaxor ferroelectric thin films.

A novel POMDP-based server RAM caching algorithm for VoD systems.

Bipolar Resistive Switching Properties of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Film for Flexible Memory Applications.

Data storage: Multiferroic memories.