Works matching DE "RANDOM access memory -- Design %26 construction"

Results: 9

RELIABLE PZT CMP TECHNOLOGY FOR NOVEL FRAM CAPACITORS.
Published in:
Integrated Ferroelectrics, 2006, v. 84, n. 1, p. 147, doi. 10.1080/10584580601085594
By:
- CHOI, S. H.;
- KO, H. Y.;
- HEO, J. E.;
- SON, Y. H.;
- BAE, B. J.;
- YOO, D. C.;
- IM, D. H.;
- JUNG, Y. J.;
- BYUN, K. R;
- HAHM, J. H.;
- SHIN, S. H.;
- YOON, B. U.;
- HONG, C. K.;
- CHO, H. K.;
- MOON, J. T.
Publication type:
Article
PROPERTIES OF NEODYMIUM-DOPED Bi4Ti3O12 THIN FILMS FOR FERROELECTRIC RANDOM ACCESS MEMORY.
Published in:
Integrated Ferroelectrics, 2006, v. 84, n. 1, p. 67, doi. 10.1080/10584580601085230
By:
- XIE, DAN;
- ZHANG, ZHIGANG;
- REN, TIANLING;
- LIU, TIANZHI;
- DONG, YAQI;
- LIU, LITIAN
Publication type:
Article
Bipolar Resistive Switching Properties of Hf0.5Zr0.5O2 Thin Film for Flexible Memory Applications.
Published in:
Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 1, p. 1, doi. 10.1002/pssa.201700396
By:
- Wu, Zhipeng;
- Zhu, Jun;
- Zhou, Yunxia;
- Liu, Xingpeng
Publication type:
Article
Engineering oxide resistive switching materials for memristive device application.
Published in:
Applied Physics A: Materials Science & Processing, 2011, v. 102, n. 4, p. 991, doi. 10.1007/s00339-011-6331-2
By:
- Liu, Lifeng;
- Chen, Bing;
- Gao, Bin;
- Zhang, Feifei;
- Chen, Yuansha;
- Liu, Xiaoyan;
- Wang, Yi;
- Han, Ruqi;
- Kang, Jinfeng
Publication type:
Article
Dielectric investigations in Sr0.75Ba0.25Nb2O6 relaxor ferroelectric thin films.
Published in:
Applied Physics A: Materials Science & Processing, 2009, v. 95, n. 3, p. 757, doi. 10.1007/s00339-008-5060-7
By:
- Santos, I. A.;
- Mendes, R. G.;
- Eiras, J. A.;
- de Los S. Guerra, J.;
- Araújo, E. B.
Publication type:
Article
Dual damascene aluminum for 1-Gbit DRAMs.
Published in:
Solid State Technology, 1998, v. 41, n. 11, p. 37
By:
- Clevenger, Larry;
- Costrini, Greg;
- Dobuzinsky, David;
- Filippi, Ronald;
- Gambino, Jeff;
- Lin, Chenting;
- Schnabel, Florian;
- Weber, Stefan;
- Gignac, Lynne;
- Ronay, Maria
Publication type:
Article
High-Speed and Area-Efficient Reconfigurable Multiplexer Bank for RAM-Based Finite State Machine Implementations.
Published in:
Journal of Circuits, Systems & Computers, 2015, v. 24, n. 7, p. -1, doi. 10.1142/S0218126615501017
By:
- Senhadji-Navaro, Raouf;
- Garcia-Vargas, Ignacio
Publication type:
Article
Data storage: Multiferroic memories.
Published in:
2007
By:
- Scott, J. F.
Publication type:
Editorial
A novel POMDP-based server RAM caching algorithm for VoD systems.
Published in:
Multimedia Tools & Applications, 2018, v. 77, n. 10, p. 13023, doi. 10.1007/s11042-017-4930-4
By:
- Yin, Baoqun;
- Cao, Jie;
- Kang, Yu;
- Lu, Xiaonong;
- Jiang, Xiaofeng
Publication type:
Article

Works matching DE "RANDOM access memory -- Design %26 construction"

RELIABLE PZT CMP TECHNOLOGY FOR NOVEL FRAM CAPACITORS.

PROPERTIES OF NEODYMIUM-DOPED Bi4Ti3O12 THIN FILMS FOR FERROELECTRIC RANDOM ACCESS MEMORY.

Bipolar Resistive Switching Properties of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> Thin Film for Flexible Memory Applications.

Engineering oxide resistive switching materials for memristive device application.

Dielectric investigations in Sr<sub>0.75</sub>Ba<sub>0.25</sub>Nb<sub>2</sub>O<sub>6</sub> relaxor ferroelectric thin films.

Dual damascene aluminum for 1-Gbit DRAMs.

High-Speed and Area-Efficient Reconfigurable Multiplexer Bank for RAM-Based Finite State Machine Implementations.

Data storage: Multiferroic memories.

A novel POMDP-based server RAM caching algorithm for VoD systems.