Works about RANDOM access memory

Results: 1382

Trade Protection Comes to Silicon Valley.

Published in:

Society, 1989, v. 26, n. 3, p. 38, doi. 10.1007/BF02699246

By:

Denzau, Arthur

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Article

Asia Pacific outlook.

Published in:

Solid State Technology, 2001, v. 44, n. 11, p. 42

By:

Vogler, Debra

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Article

WORLD NEWS.

Published in:: Solid State Technology, 2001, v. 44, n. 1, p. 16
Publication type:: Article

What will replace the PC in the DRAM market?

Published in:

Solid State Technology, 2000, v. 43, n. 11, p. 64

By:

Garber, Sherry L.

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Article

Liners for tungsten plug applications with long throw and ionized PVD.

Published in:

Solid State Technology, 2000, v. 43, n. 7, p. 183

By:

Butler, D. C.;
Buchanan, Keith;
Burgess, Stephen R.;
Urbansky, N.;
Schmidbauer, S.

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Article

Two-layer copper for SDRAM.

Published in:: Solid State Technology, 1999, v. 42, n. 11, p. 28
Publication type:: Article

Tech Briefs.

Published in:: Solid State Technology, 1999, v. 42, n. 10, p. 28
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Japan.

Published in:: Solid State Technology, 1999, v. 42, n. 8, p. 20
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Asia/Pacific.

Published in:: Solid State Technology, 1999, v. 42, n. 7, p. 26
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Japan.

Published in:: Solid State Technology, 1999, v. 42, n. 3, p. 18
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Acer cuts DRAM output.

Published in:

Solid State Technology, 1998, v. 41, n. 9, p. 58

By:

Lunday, Christine

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Article

Anhydrous HF etch reduces processing steps for DRAM capacitors.

Published in:

Solid State Technology, 1998, v. 41, n. 5, p. 71

By:

Chang, S.-L. Luke;
Hanestad, Ron;
Butterbaugh, Jeffery W.

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Article

Korea's DRAM Inc. meets reality.

Published in:

Solid State Technology, 1998, v. 41, n. 5, p. 50

By:

Burns, George

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Article

Significant role seen for selective epi and...

Published in:

Solid State Technology, 1998, v. 41, n. 5, p. 36

By:

Burggraaf, Pieter

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Article

Seimens' British fab opens.

Published in:: Solid State Technology, 1998, v. 41, n. 1, p. 36
Publication type:: Article

Samsung revs 64-Mbit production in Austin.

Published in:

Solid State Technology, 1998, v. 41, n. 1, p. 30

By:

P.N.D.

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Article

Nitride flash gets a push.

Published in:: Electronics Systems & Software, 2005, v. 3, n. 6, p. 8
Publication type:: Article

Multiple seeds sensitivity using a single seed with threshold.

Published in:

Journal of Bioinformatics & Computational Biology, 2015, v. 13, n. 4, p. -1, doi. 10.1142/S0219720015500110

By:

Egidi, Lavinia;
Manzini, Giovanni

Publication type:

Article

Tuning Resistive Switching Memory Behavior from Non-volatile to Volatile by Phenoxy Linkages in Soluble Polyimides Containing Carbazole-Tethered Triazole Groups.

Published in:

Macromolecular Chemistry & Physics, 2014, v. 215, n. 23, p. 2374, doi. 10.1002/macp.201400441

By:

Shi, Lei;
Jia, Nanfang;
Kong, Lushi;
Qi, Shengli;
Wu, Dezhen

Publication type:

Article

Memory Devices: One-Step All-Solution-Based Au-GO Core-Shell Nanosphere Active Layers in Nonvolatile ReRAM Devices (Adv. Funct. Mater. 10/2017).

Published in:

Advanced Functional Materials, 2017, v. 27, n. 10, p. n/a, doi. 10.1002/adfm.201770063

By:

Rani, Adila;
Velusamy, Dhinesh Babu;
Marques Mota, Filipe;
Jang, Yoon Hee;
Kim, Richard Hahnkee;
Park, Cheolmin;
Kim, Dong Ha

Publication type:

Article

Nonvolatile Random Access Memory and Energy Storage Based on Antiferroelectric Like Hysteresis in ZrO2.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 41, p. 7486, doi. 10.1002/adfm.201603182

By:

Pešić, Milan;
Hoffmann, Michael;
Richter, Claudia;
Mikolajick, Thomas;
Schroeder, Uwe

Publication type:

Article

Resistive Switching Memory Integrated with Nanogenerator for Self-Powered Bioimplantable Devices.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 29, p. 5211, doi. 10.1002/adfm.201505569

By:

Kim, Bo‐Yun;
Lee, Woong‐Hee;
Hwang, Hyun‐Gyu;
Kim, Dong‐Ha;
Kim, Jeong‐Hun;
Lee, Sang‐Hoon;
Nahm, Sahn

Publication type:

Article

Controlling Phase Assemblage in a Complex Multi-Cation System: Phase-Pure Room Temperature Multiferroic (1− x)BiTi(1−y)/2Fe yMg(1−y)/2O3- xCaTiO3

Published in:

Advanced Functional Materials, 2016, v. 26, n. 15, p. 2523, doi. 10.1002/adfm.201504911

By:

Mandal, Pranab;
Pitcher, Michael J.;
Alaria, Jonathan;
Niu, Hongjun;
Zanella, Marco;
Claridge, John B.;
Rosseinsky, Matthew J.

Publication type:

Article

Resistive Switching in Mott Insulators and Correlated Systems.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 40, p. 6287, doi. 10.1002/adfm.201500823

By:

Janod, Etienne;
Tranchant, Julien;
Corraze, Benoit;
Querré, Madec;
Stoliar, Pablo;
Rozenberg, Marcelo;
Cren, Tristan;
Roditchev, Dimitri;
Phuoc, Vinh Ta;
Besland, Marie‐Paule;
Cario, Laurent

Publication type:

Article

Realization of Boolean Logic Functionality Using Redox-Based Memristive Devices.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 40, p. 6414, doi. 10.1002/adfm.201500865

By:

Siemon, Anne;
Breuer, Thomas;
Aslam, Nabeel;
Ferch, Sebastian;
Kim, Wonjoo;
van den Hurk, Jan;
Rana, Vikas;
Hoffmann‐Eifert, Susanne;
Waser, Rainer;
Menzel, Stephan;
Linn, Eike

Publication type:

Article

Electrically Driven Random Laser Memory.

Published in:

Advanced Functional Materials, 2015, p. 4058, doi. 10.1002/adfm.201500734

By:

Cih-Su Wang;
Chuan-Hsien Nieh;
Yang-Fang Chen;
Tai-Yuan Lin

Publication type:

Article

Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices.

Published in:

Advanced Functional Materials, 2015, v. 25, n. 25, p. 3825, doi. 10.1002/adfm.201501389

By:

Wang, Hong;
Du, Yuanmin;
Li, Yingtao;
Zhu, Bowen;
Leow, Wan Ru;
Li, Yuangang;
Pan, Jisheng;
Wu, Tao;
Chen, Xiaodong

Publication type:

Article

Atomistic Origin of the Enhanced Crystallization Speed and n-Type Conductivity in Bi-doped Ge-Sb-Te Phase-Change Materials.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 46, p. 7291, doi. 10.1002/adfm.201401202

By:

Skelton, Jonathan M.;
Pallipurath, Anuradha R.;
Lee, Tae‐Hoon;
Elliott, Stephen R.

Publication type:

Article

Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures.

Published in:

Advanced Functional Materials, 2014, v. 24, n. 15, p. 2171, doi. 10.1002/adfm.201303274

By:

Shang, Jie;
Liu, Gang;
Yang, Huali;
Zhu, Xiaojian;
Chen, Xinxin;
Tan, Hongwei;
Hu, Benlin;
Pan, Liang;
Xue, Wuhong;
Li, Run‐Wei

Publication type:

Article

Layer-effects on electrical and photovoltaic properties of Aurivillius-type Srn-3Bi4TinO3n+3 (n = 3, 5) films grown by pulsed laser deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 33, p. 25318, doi. 10.1007/s10854-022-09238-x

By:

Cui, Ruirui;
Zhao, Xudong;
Ye, Yaosen;
Deng, Chaoyong

Publication type:

Article

Contact size-dependent switching instabilities in HfO2 RRAM.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 28, p. 22230, doi. 10.1007/s10854-022-09002-1

By:

Baikov, Pavel;
Ranganathan, Kamalakannan;
Goldfarb, Ilan;
Ruzin, Arie

Publication type:

Article

Evidence for negative differential resistance and switchable diode effect in multiferroic BiFe0.95Sc0.05O3-based resistive random access memory under doping engineering.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 19, p. 15848, doi. 10.1007/s10854-022-08485-2

By:

Mohanty, Himadri Nandan;
Mishra, S.

Publication type:

Article

Ga doping induced structural and optical modification in Ge2Sb2Te5 thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2022, v. 33, n. 18, p. 14419, doi. 10.1007/s10854-022-08365-9

By:

Bala, Neeru;
Thakur, Anup

Publication type:

Article

Optical and resistive switching properties of Chitosan-aluminum-doped zinc oxide composite thin films for transparent resistive random access memory application.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 3, p. 3556, doi. 10.1007/s10854-020-05102-y

By:

Vallabhapurapu, Sreedevi;
Sangani, L. D. Varma;
Krishna, M. Ghanashyam;
Das, J.;
Srinivasan, A.;
Srinivasu, V. V.

Publication type:

Article

Aminobenzene stabilized bismuth halide nanoparticles with O-shaped hysteresis behaviour.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 24, p. 22652, doi. 10.1007/s10854-020-04777-7

By:

Perla, Venkata K;
Ghosh, Sarit K;
Mallick, Kaushik

Publication type:

Article

Molar optimization of MnO2 to form composite with Co3O4 by potentiodynamic electrodeposition for better electrochemical characterizations.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 10, p. 7315, doi. 10.1007/s10854-019-02420-8

By:

Khavale, S. V.;
Ambare, R. C.;
Lokhande, B. J.

Publication type:

Article

The effect of thickness on texture of Ge2Sb2Te5 phase-change films.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 8, p. 5848, doi. 10.1007/s10854-019-02645-7

By:

Tang, Qiongyan;
He, Tianze;
Yu, Kun;
Cheng, Yan;
Qi, Ruijuan;
Huang, Rong;
Zhao, Jin;
Song, Wenxiong;
Song, Zhitang

Publication type:

Article

Total ionizing dose effects of 60Co γ-rays radiation on HfxZr1−xO2 ferroelectric thin film capacitors.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 3, p. 2049, doi. 10.1007/s10854-019-02724-9

By:

Sun, Qi;
Liao, Jiajia;
Peng, Qiangxiang;
Zeng, Binjian;
Jiang, Jie;
Luo, Yuandong;
Liao, Min;
Yin, Lu;
Zhou, Yichun

Publication type:

Article

Remarkably improved uniform bipolar-resistive switching performance with a NiO buffer layer in Bi2SiO5 thin-film memory devices.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 24, p. 21477, doi. 10.1007/s10854-019-02530-3

By:

Chen, Ruqi;
Hu, Wei;
Hao, Aize;
Bao, Dinghua

Publication type:

Article

Phase-change characteristics of carbon-doped GeSbSe thin films for PRAM applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 23, p. 20751, doi. 10.1007/s10854-019-02442-2

By:

Kim, J. H.;
Park, J. H.;
Ko, D.-H.

Publication type:

Article

Resistive switching modification by ultraviolet illumination in amorphous SrO-based resistive random access memory.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 14, p. 13445, doi. 10.1007/s10854-019-01712-3

By:

Tan, Tingting;
Du, Yihang;
Sun, Yaling;
Zhang, Hua;
Cao, Ai;
Zha, Gangqiang

Publication type:

Article

Improvement of thermal stability of antimony film by cerium addition for phase change memory application.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 19, p. 17003, doi. 10.1007/s10854-018-9796-3

By:

Zhang, Jianhao;
Zou, Hua;
Hu, Yifeng;
Zhu, Xiaoqin;
Sun, Yuemei;
Song, Zhitang

Publication type:

Article

Investigation of Sb65Se35/Sb multilayer thin films for high speed and high thermal stability application in phase change memory.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 19, p. 16172, doi. 10.1007/s10854-018-9706-8

By:

Guo, Xuan;
Hu, Yifeng;
Chou, Qingqian;
Lai, Tianshu;
Zhu, Xiaoqin

Publication type:

Article

Surfactant molecules make liquid phase exfoliated graphene a switching element for resistive random access memory applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 11, p. 9700, doi. 10.1007/s10854-018-9007-2

By:

Sukumaran, Sheena S.;
Jinesh, K. B.;
Gopchandran, K. G.

Publication type:

Article

Improved fatigue property of hafnium substitute lead zirconate titanate deposited by pulse laser deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 2, p. 1819, doi. 10.1007/s10854-016-5731-7

By:

Wu, Zhipeng;
Zhu, Jun;
Liu, Xingpeng

Publication type:

Article

Cu doping effect on the resistive switching behaviors of CoFeO thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 3, p. 2255, doi. 10.1007/s10854-015-4019-7

By:

Xiahou, Zhao;
Kim, Deok;
Xu, Hongtao;
Li, Ying;
Lee, Bo;
Liu, Chunli

Publication type:

Article

Effect of V substitution on microstructure and ferroelectric properties of BiHoTiO thin films prepared by sol-gel method.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 2, p. 130, doi. 10.1007/s10854-010-0101-3

By:

Dongyun Guo;
Changyong Liu;
Chuanbin Wang;
Qiang Shen;
Lianmeng Zhang

Publication type:

Article

Editorial: Virtual books, person-books and new media artefacts: The expanding remit of the Organization Studies review section.

Published in:

Organization Studies, 2022, v. 43, n. 11, p. 1857, doi. 10.1177/01708406221126292

By:

Coslor, Erica;
Foroughi, Hamid;
Hwang, Hokyu

Publication type:

Article

Ferroelectric polymers for non‐volatile memory devices: a review.

Published in:

Polymer International, 2020, v. 69, n. 6, p. 533, doi. 10.1002/pi.5980

By:

Li, Huilin;
Wang, Ruopeng;
Han, Su‐Ting;
Zhou, Ye

Publication type:

Article

MM-DIRECT: Main memory database instant recovery with tuple consistent checkpoint.

Published in:

VLDB Journal International Journal on Very Large Data Bases, 2024, v. 33, n. 3, p. 859, doi. 10.1007/s00778-024-00846-z

By:

Magalhaes, Arlino;
Brayner, Angelo;
Monteiro, Jose Maria

Publication type:

Article