Works matching DE "RANDOM access memory"

Results: 1387

Asia Pacific outlook.

Published in:

Solid State Technology, 2001, v. 44, n. 11, p. 42

By:

Vogler, Debra

Publication type:

Article

WORLD NEWS.

Published in:: Solid State Technology, 2001, v. 44, n. 1, p. 16
Publication type:: Article

What will replace the PC in the DRAM market?

Published in:

Solid State Technology, 2000, v. 43, n. 11, p. 64

By:

Garber, Sherry L.

Publication type:

Article

Liners for tungsten plug applications with long throw and ionized PVD.

Published in:

Solid State Technology, 2000, v. 43, n. 7, p. 183

By:

Butler, D. C.;
Buchanan, Keith;
Burgess, Stephen R.;
Urbansky, N.;
Schmidbauer, S.

Publication type:

Article

Two-layer copper for SDRAM.

Published in:: Solid State Technology, 1999, v. 42, n. 11, p. 28
Publication type:: Article

Tech Briefs.

Published in:: Solid State Technology, 1999, v. 42, n. 10, p. 28
Publication type:: Article

Japan.

Published in:: Solid State Technology, 1999, v. 42, n. 8, p. 20
Publication type:: Article

Asia/Pacific.

Published in:: Solid State Technology, 1999, v. 42, n. 7, p. 26
Publication type:: Article

Japan.

Published in:: Solid State Technology, 1999, v. 42, n. 3, p. 18
Publication type:: Article

Acer cuts DRAM output.

Published in:

Solid State Technology, 1998, v. 41, n. 9, p. 58

By:

Lunday, Christine

Publication type:

Article

Anhydrous HF etch reduces processing steps for DRAM capacitors.

Published in:

Solid State Technology, 1998, v. 41, n. 5, p. 71

By:

Chang, S.-L. Luke;
Hanestad, Ron;
Butterbaugh, Jeffery W.

Publication type:

Article

Korea's DRAM Inc. meets reality.

Published in:

Solid State Technology, 1998, v. 41, n. 5, p. 50

By:

Burns, George

Publication type:

Article

Significant role seen for selective epi and...

Published in:

Solid State Technology, 1998, v. 41, n. 5, p. 36

By:

Burggraaf, Pieter

Publication type:

Article

Seimens' British fab opens.

Published in:: Solid State Technology, 1998, v. 41, n. 1, p. 36
Publication type:: Article

Samsung revs 64-Mbit production in Austin.

Published in:

Solid State Technology, 1998, v. 41, n. 1, p. 30

By:

P.N.D.

Publication type:

Article

First-Principles Study of Electric Field Effects on the Magnetic Anisotropy in MgO/Fe2IrGa Heterostructures: First-Principles Study of Electric Field Effects on the Magnetic Anisotropy in MgO/Fe2IrGa Heterostructures: S. Gao et al.

Published in:

Journal of Electronic Materials, 2025, v. 54, n. 3, p. 1602, doi. 10.1007/s11664-024-11665-x

By:

Gao, Shiran;
Zhao, Chengyang;
Zhang, Xinzhuo;
Qiao, Wen;
Yan, Shiming;
Bai, Ru;
Zhou, Tiejun

Publication type:

Article

Nitride flash gets a push.

Published in:: Electronics Systems & Software, 2005, v. 3, n. 6, p. 8
Publication type:: Article

Solve the Big Problems First.

Published in:

Bio-IT World, 2009, v. 8, n. 6, p. 11

By:

BUSH, ERNIE

Publication type:

Article

2004 Bio-IT World Conference + Expo Boston.

Published in:

2004

By:

Weil, Nancy

Publication type:

Report

Effect of a "Zn Bridge" on the Consecutively Tunable Retention Characteristics of Volatile Random Access Memory Materials.

Published in:

Chemistry - A European Journal, 2021, v. 27, n. 49, p. 12526, doi. 10.1002/chem.202101496

By:

Guo, Jiacong;
Zhang, Yankun;
Tian, Guofeng;
Ji, Deyang;
Qi, Shengli;
Wu, Dezhen

Publication type:

Article

A renewable, modular, and time-responsive DNA circuit.

Published in:

Natural Computing, 2011, v. 10, n. 1, p. 467, doi. 10.1007/s11047-010-9237-6

By:

Goel, Ashish;
Ibrahimi, Morteza

Publication type:

Article

Resistive switching modification by ultraviolet illumination in amorphous SrO-based resistive random access memory.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 14, p. 13445, doi. 10.1007/s10854-019-01712-3

By:

Tan, Tingting;
Du, Yihang;
Sun, Yaling;
Zhang, Hua;
Cao, Ai;
Zha, Gangqiang

Publication type:

Article

Improvement of thermal stability of antimony film by cerium addition for phase change memory application.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 19, p. 17003, doi. 10.1007/s10854-018-9796-3

By:

Zhang, Jianhao;
Zou, Hua;
Hu, Yifeng;
Zhu, Xiaoqin;
Sun, Yuemei;
Song, Zhitang

Publication type:

Article

Investigation of Sb65Se35/Sb multilayer thin films for high speed and high thermal stability application in phase change memory.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 19, p. 16172, doi. 10.1007/s10854-018-9706-8

By:

Guo, Xuan;
Hu, Yifeng;
Chou, Qingqian;
Lai, Tianshu;
Zhu, Xiaoqin

Publication type:

Article

Surfactant molecules make liquid phase exfoliated graphene a switching element for resistive random access memory applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 11, p. 9700, doi. 10.1007/s10854-018-9007-2

By:

Sukumaran, Sheena S.;
Jinesh, K. B.;
Gopchandran, K. G.

Publication type:

Article

Improved fatigue property of hafnium substitute lead zirconate titanate deposited by pulse laser deposition.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 2, p. 1819, doi. 10.1007/s10854-016-5731-7

By:

Wu, Zhipeng;
Zhu, Jun;
Liu, Xingpeng

Publication type:

Article

Cu doping effect on the resistive switching behaviors of CoFeO thin films.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 3, p. 2255, doi. 10.1007/s10854-015-4019-7

By:

Xiahou, Zhao;
Kim, Deok;
Xu, Hongtao;
Li, Ying;
Lee, Bo;
Liu, Chunli

Publication type:

Article

Effect of V substitution on microstructure and ferroelectric properties of BiHoTiO thin films prepared by sol-gel method.

Published in:

Journal of Materials Science: Materials in Electronics, 2011, v. 22, n. 2, p. 130, doi. 10.1007/s10854-010-0101-3

By:

Dongyun Guo;
Changyong Liu;
Chuanbin Wang;
Qiang Shen;
Lianmeng Zhang

Publication type:

Article

Structural study of Bi4Ti3O12 using neutron powder diffraction data.

Published in:

Journal of Materials Science Letters, 2003, v. 22, n. 23, p. 1655, doi. 10.1023/B:JMSL.0000004641.64177.01

By:

Kim, Yong-Il;
Jeon, Min Ku;
Woo, Seong Ihl

Publication type:

Article

Surface characteristics of MOCVD grown TiO2 films by atomic force microscopy.

Published in:

Journal of Materials Science Letters, 2003, v. 22, n. 19, p. 1325, doi. 10.1023/A:1025775025358

By:

Park, Young-Bae;
Ahn, K. H.;
Park, Dong-Wha

Publication type:

Article

Uplink access control for machine-type communications in LTE-A networks.

Published in:

Personal & Ubiquitous Computing, 2016, v. 20, n. 6, p. 851, doi. 10.1007/s00779-016-0961-5

By:

Hwang, Ren-Hung;
Huang, Chi-Fu;
Lin, Huang-Wei;
Wu, Jang-Jiin

Publication type:

Article

Exploiting transition locality in automatic verification of finite-state concurrent systems.

Published in:

International Journal on Software Tools for Technology Transfer, 2004, v. 6, n. 4, p. 320, doi. 10.1007/s10009-004-0149-6

By:

Della Penna, Giuseppe;
Intrigila, Benedetto;
Melatti, Igor;
Tronci, Enrico;
Venturini Zilli, Marisa

Publication type:

Article

Iterative method for large-scale Timoshenko beam models assessed on commercial-grade paperboard.

Published in:

Computational Mechanics, 2025, v. 75, n. 1, p. 1, doi. 10.1007/s00466-024-02487-z

By:

Görtz, Morgan;
Kettil, Gustav;
Målqvist, Axel;
Fredlund, Mats;
Edelvik, Fredrik

Publication type:

Article

MODERATE DEVIATIONS FOR SHORTEST-PATH LENGTHS ON RANDOM SEGMENT PROCESSES.

Published in:

ESAIM: Probability & Statistics, 2016, v. 20, p. 261, doi. 10.1051/ps/2016012

By:

HIRSCH, CHRISTIAN;
NEUH`USER, DAVID;
SCHMIDT, VOLKER

Publication type:

Article

Optimal arrivals in a two-server random access system with loss.

Published in:

Automation & Remote Control, 2017, v. 78, n. 3, p. 557, doi. 10.1134/S0005117917030146

By:

Chirkova, Yu.

Publication type:

Article

The repeated nondestructive march tests with variable address sequences.

Published in:

Automation & Remote Control, 2007, v. 68, n. 4, p. 688, doi. 10.1134/S000511790704011X

By:

Yarmolik, V.;
Yarmolik, S.

Publication type:

Article

Probabilistic-time characteristics of bistable random access networks.

Published in:

Automation & Remote Control, 2006, v. 67, n. 2, p. 251, doi. 10.1134/S0005117906020056

By:

Kolousov, D.;
Nazarov, A.;
Tsoi, S.

Publication type:

Article

Unstable Random Access Networks under a Static Conflict Warning Protocol.

Published in:

Automation & Remote Control, 2004, v. 65, n. 8, p. 1240, doi. 10.1023/B:AURC.0000038726.35872.22

By:

Margolis, N. Yu.;
Nazarov, A. A.

Publication type:

Article

Magnetic Random Access Memory Devices.

Published in:

Automation & Remote Control, 2003, v. 64, n. 9, p. 1369, doi. 10.1023/A:1026039700433

By:

Vasil'eva, N. P.;
Kasatkin, S. I.

Publication type:

Article

Nondestructive RAM Testing by Analyzing the Output Data for Symmetry.

Published in:

Automation & Remote Control, 2003, v. 64, n. 9, p. 1488, doi. 10.1023/A:1026008220905

By:

Zankovich, A. P.;
Yarmolik, V. N.

Publication type:

Article

AQUa: an adaptive framework for compression of sequencing quality scores with random access functionality.

Published in:

Bioinformatics, 2018, v. 34, n. 3, p. 425, doi. 10.1093/bioinformatics/btx607

By:

Paridaens, Tom;
Wallendael, Glenn Van;
Neve, Wesley De;
Lambert, Peter

Publication type:

Article

VarMatch: robust matching of small variant datasets using flexible scoring schemes.

Published in:

Bioinformatics, 2017, v. 33, n. 9, p. 1301, doi. 10.1093/bioinformatics/btw797

By:

Chen Sun;
Medvedev, Paul

Publication type:

Article

Transformations for the compression of FASTQ quality scores of next-generation sequencing data.

Published in:

Bioinformatics, 2012, v. 28, n. 5, p. 628, doi. 10.1093/bioinformatics/btr689

By:

Wan, Raymond;
Anh, Vo Ngoc;
Asai, Kiyoshi

Publication type:

Article

Robust relative compression of genomes with random access.

Published in:

Bioinformatics, 2011, v. 27, n. 21, p. 2979, doi. 10.1093/bioinformatics/btr505

By:

Deorowicz, Sebastian;
Grabowski, Szymon

Publication type:

Article

The Switching Characteristics in Bilayer ZnO/HfO 2 Resistive Random-Access Memory, Depending on the Top Electrode.

Published in:

Electronic Materials, 2024, v. 5, n. 2, p. 71, doi. 10.3390/electronicmat5020006

By:

Kwon, So-Yeon;
Ko, Woon-San;
Byun, Jun-Ho;
Lee, Do-Yeon;
Lee, Hi-Deok;
Lee, Ga-Won

Publication type:

Article

Insulator Metal Transition-Based Selector in Crossbar Memory Arrays.

Published in:

Electronic Materials, 2024, v. 5, n. 1, p. 17, doi. 10.3390/electronicmat5010002

By:

Darwish, Mahmoud;
Pohl, László

Publication type:

Article

Thermal Analysis and Evaluation of Memristor-Based Compute-in-Memory Chips.

Published in:

Chips, 2025, v. 4, n. 1, p. 9, doi. 10.3390/chips4010009

By:

Ma, Awang;
Gao, Bin;
Yao, Peng;
Tang, Jianshi;
Qian, He;
Wu, Huaqiang

Publication type:

Article

Recent Progress of Non-Volatile Memory Devices Based on Two-Dimensional Materials.

Published in:

Chips, 2024, v. 3, n. 4, p. 271, doi. 10.3390/chips3040014

By:

Pan, Jiong;
Wang, Zeda;
Zhao, Bingchen;
Yin, Jiaju;
Guo, Pengwen;
Yang, Yi;
Ren, Tian-Ling

Publication type:

Article

The Evolution of Volatile Memory Forensics.

Published in:

Journal of Cybersecurity & Privacy, 2022, v. 2, n. 3, p. 556, doi. 10.3390/jcp2030028

By:

Nyholm, Hannah;
Monteith, Kristine;
Lyles, Seth;
Gallegos, Micaela;
DeSantis, Mark;
Donaldson, John;
Taylor, Claire

Publication type:

Article

Defending against OS-Level Malware in Mobile Devices via Real-Time Malware Detection and Storage Restoration †.

Published in:

Journal of Cybersecurity & Privacy, 2022, v. 2, n. 2, p. 311, doi. 10.3390/jcp2020017

By:

Chen, Niusen;
Chen, Bo

Publication type:

Article