Works matching DE "RANDOM access memory"
Results: 1284
Influence of Loading, Regeneration and Recalling Elements Processes on the System Behavior of All Optical Data Bus Line System Random Access Memory.
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- Journal of Optical Communications, 2024, v. 45, n. 1, p. s35, doi. 10.1515/joc-2019-0163
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VCONV: A Convolutional Neural Network Accelerator for FPGAs.
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- Electronics (2079-9292), 2025, v. 14, n. 4, p. 657, doi. 10.3390/electronics14040657
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Asia Pacific outlook.
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- Solid State Technology, 2001, v. 44, n. 11, p. 42
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WORLD NEWS.
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- Solid State Technology, 2001, v. 44, n. 1, p. 16
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What will replace the PC in the DRAM market?
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- Solid State Technology, 2000, v. 43, n. 11, p. 64
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Liners for tungsten plug applications with long throw and ionized PVD.
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- Solid State Technology, 2000, v. 43, n. 7, p. 183
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Two-layer copper for SDRAM.
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- Solid State Technology, 1999, v. 42, n. 11, p. 28
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Tech Briefs.
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- Solid State Technology, 1999, v. 42, n. 10, p. 28
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- Article
Japan.
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- Solid State Technology, 1999, v. 42, n. 8, p. 20
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- Article
Asia/Pacific.
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- Solid State Technology, 1999, v. 42, n. 7, p. 26
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- Article
Japan.
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- Solid State Technology, 1999, v. 42, n. 3, p. 18
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- Article
Acer cuts DRAM output.
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- Solid State Technology, 1998, v. 41, n. 9, p. 58
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Anhydrous HF etch reduces processing steps for DRAM capacitors.
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- Solid State Technology, 1998, v. 41, n. 5, p. 71
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Korea's DRAM Inc. meets reality.
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- Solid State Technology, 1998, v. 41, n. 5, p. 50
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Significant role seen for selective epi and...
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- Solid State Technology, 1998, v. 41, n. 5, p. 36
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Seimens' British fab opens.
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- Solid State Technology, 1998, v. 41, n. 1, p. 36
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Samsung revs 64-Mbit production in Austin.
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- Solid State Technology, 1998, v. 41, n. 1, p. 30
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Expressing aspectual interactions in design: evaluating three AOM approaches in the slot machine domain.
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- Software & Systems Modeling, 2016, v. 15, n. 3, p. 881, doi. 10.1007/s10270-014-0442-0
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- Article
Tuning Resistive Switching Memory Behavior from Non-volatile to Volatile by Phenoxy Linkages in Soluble Polyimides Containing Carbazole-Tethered Triazole Groups.
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- Macromolecular Chemistry & Physics, 2014, v. 215, n. 23, p. 2374, doi. 10.1002/macp.201400441
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One‐Dimensional Covalent Organic Framework‐Based Multilevel Memristors for Neuromorphic Computing.
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- Angewandte Chemie, 2024, v. 136, n. 20, p. 1, doi. 10.1002/ange.202402911
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Supramolecular Memristor Based on Bistable [2]Catenanes: Toward High‐Density and Non‐Volatile Memory Devices.
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- Angewandte Chemie, 2023, v. 135, n. 42, p. 1, doi. 10.1002/ange.202309605
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Resistive Switching in Mott Insulators and Correlated Systems.
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- Advanced Functional Materials, 2015, v. 25, n. 40, p. 6287, doi. 10.1002/adfm.201500823
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Realization of Boolean Logic Functionality Using Redox-Based Memristive Devices.
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- Advanced Functional Materials, 2015, v. 25, n. 40, p. 6414, doi. 10.1002/adfm.201500865
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Electrically Driven Random Laser Memory.
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- Advanced Functional Materials, 2015, p. 4058, doi. 10.1002/adfm.201500734
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Configurable Resistive Switching between Memory and Threshold Characteristics for Protein-Based Devices.
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- Advanced Functional Materials, 2015, v. 25, n. 25, p. 3825, doi. 10.1002/adfm.201501389
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Atomistic Origin of the Enhanced Crystallization Speed and n-Type Conductivity in Bi-doped Ge-Sb-Te Phase-Change Materials.
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- Advanced Functional Materials, 2014, v. 24, n. 46, p. 7291, doi. 10.1002/adfm.201401202
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Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures.
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- Advanced Functional Materials, 2014, v. 24, n. 15, p. 2171, doi. 10.1002/adfm.201303274
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Adversarial deep learning for improved abdominal organ segmentation in CT scans.
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- Multimedia Tools & Applications, 2024, v. 83, n. 35, p. 82107, doi. 10.1007/s11042-024-18578-1
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Block Trading: Building up a Stock Position Under a Regime Switching Model.
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- Methodology & Computing in Applied Probability, 2019, v. 21, n. 3, p. 805, doi. 10.1007/s11009-019-09698-5
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Editorial: Virtual books, person-books and new media artefacts: The expanding remit of the Organization Studies review section.
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- Organization Studies, 2022, v. 43, n. 11, p. 1857, doi. 10.1177/01708406221126292
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A fast, accurate, and smooth planetary ephemeris retrieval system.
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- Celestial Mechanics & Dynamical Astronomy, 2010, v. 108, n. 2, p. 107, doi. 10.1007/s10569-010-9296-0
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Process Your Cryo-EM Data Using Computing Resources at Pacific Northwest Center for Cryo-EM (PNCC).
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- Microscopy & Microanalysis, 2024, v. 30, p. 1, doi. 10.1093/mam/ozae044.446
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Linkless and Flat Embeddings in 3-Space.
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- Discrete & Computational Geometry, 2012, v. 47, n. 4, p. 731, doi. 10.1007/s00454-012-9413-9
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Dynamic Coresets.
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- Discrete & Computational Geometry, 2009, v. 42, n. 3, p. 469, doi. 10.1007/s00454-009-9165-3
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Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03775-y
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Optimizing the blast fragmentation quality of discontinuous rock mass: Case study of Jebel Bouzegza Open-Cast Mine, North Algeria.
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- Mining of Mineral Deposits, 2023, v. 17, n. 4, p. 35, doi. 10.33271/mining17.04.035
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An Efficient Wildfire Detection System for AI-Embedded Applications Using Satellite Imagery.
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- Fire (2571-6255), 2023, v. 6, n. 4, p. 169, doi. 10.3390/fire6040169
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Three-stage SiC-based bi-directional on-board battery charger with titanium level efficiency.
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- IET Power Electronics (Wiley-Blackwell), 2020, v. 13, n. 7, p. 1477, doi. 10.1049/iet-pel.2019.1263
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Universal wireless powered terminals for robust overhead transmission line monitoring.
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- IET Power Electronics (Wiley-Blackwell), 2019, v. 12, n. 14, p. 1, doi. 10.1049/iet-pel.2019.0206
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Effect of different pulse-width modulation control methods on the behaviour of the series modified switched boost inverter.
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- IET Power Electronics (Wiley-Blackwell), 2019, v. 12, n. 12, p. 1, doi. 10.1049/iet-pel.2018.5748
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Quantitative power loss analysis and optimisation in Nth-order low-voltage multilevel converters.
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- IET Power Electronics (Wiley-Blackwell), 2019, v. 12, n. 7, p. 1652, doi. 10.1049/iet-pel.2018.5928
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- Article
Direct atomic identification of cation migration induced gradual cubic-to-hexagonal phase transition in Ge<sub>2</sub>Sb<sub>2</sub>Te<sub>5</sub>.
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- Communications Chemistry, 2019, v. 2, n. 1, p. N.PAG, doi. 10.1038/s42004-019-0114-7
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Compression and Analysis between Classic and Modern Cache Replacement Techniques.
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- Iraqi Journal of Information Technology, 2018, v. 9, n. 1, Part 1&2, p. 28
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Externalizing Memory Made Modern Civilization and Created Modern Humans.
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- Cosmos + Taxis, 2024, v. 12, n. 7/8, p. 27
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- Article
Pseudo-transistors for emerging neuromorphic electronics.
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- Science & Technology of Advanced Materials, 2023, v. 24, n. 1, p. 1, doi. 10.1080/14686996.2023.2180286
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- Article
Application of phase-change materials in memory taxonomy.
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- Science & Technology of Advanced Materials, 2017, v. 18, n. 1, p. 406, doi. 10.1080/14686996.2017.1332455
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- Article
Application of phase-change materials in memory taxonomy.
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- Science & Technology of Advanced Materials, 2017, v. 18, n. 1, p. 406, doi. 10.1080/14686996.2017.1332455
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- Article
Characterization of Bi and Fe co-doped PZT capacitors for FeRAM.
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- Science & Technology of Advanced Materials, 2010, v. 11, n. 4, p. 1, doi. 10.1088/1468-6996/11/4/044402
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- Article
Structural analysis of anodic porous alumina used for resistive random access memory.
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- Science & Technology of Advanced Materials, 2010, v. 11, n. 2, p. 1, doi. 10.1088/1468-6996/11/2/025002
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- Article
Greatly enhanced tunneling electroresistance in ferroelectric tunnel junctions with a double barrier design.
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- NPJ Computational Materials, 2023, v. 9, n. 1, p. 1, doi. 10.1038/s41524-023-01101-9
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