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Transparency Engineering in Quantum Dot‐Based Memories.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 13, p. 1, doi. 10.1002/pssa.201800018
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Classical Effects in the Weak-Field Magnetoresistance of InGaAs/InAlAs Quantum Wells.
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- JETP Letters, 2018, v. 107, n. 8, p. 320, doi. 10.1134/S0021364018050028
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Lattice resolved annular dark-field scanning transmission electron microscopy of (Al, In)GaN/GaN layers for measuring segregation with sub-monolayer precision.
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- Journal of Materials Science, 2013, v. 48, n. 7, p. 2883, doi. 10.1007/s10853-012-6822-3
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- Article