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Enhancement of Emission Efficiency of Deep-Ultraviolet AlGaN Quantum Wells Through Surface Plasmon Coupling with an Al Nanograting Structure.
- Published in:
- Plasmonics, 2018, v. 13, n. 3, p. 863, doi. 10.1007/s11468-017-0582-5
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- Article
Control of orbital reconstruction in (LaAlO<sub>3</sub>)<sub>M</sub>/(SrTiO<sub>3</sub>)<sub>N</sub>(001) quantum wells by strain and confinement.
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- Scientific Reports, 2015, p. 7909, doi. 10.1038/srep07909
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- Article
Investigation of Ultra-Wide Reflection Bands in UV Region by Using One-Dimensional Multi Quantum Well Photonic Crystal.
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- Progress in Electromagnetics Research M, 2014, v. 38, p. 37, doi. 10.2528/pierm14062308
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- Article
THz intersubband transitions in AlGaN/GaN multi-quantum-wells.
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- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 4, p. 761, doi. 10.1002/pssa.201300431
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- Article
Four-State Sub-12-nm FETs Employing Lattice-Matched II-VI Barrier Layers.
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- Journal of Electronic Materials, 2013, v. 42, n. 11, p. 3191, doi. 10.1007/s11664-013-2758-x
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- Article
The influence of the InGaN back-barrier on the properties of Al0.3Ga0.7N/AlN/GaN/InGaN/GaN structure.
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- European Physical Journal - Applied Physics, 2011, v. 55, n. 1, p. N.PAG, doi. 10.1051/epjap/2011110184
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- Article