Works matching DE "QUANTUM well lasers"

Results: 127

Optimising (Al,Ga) (As,Bi) Quantum Well Laser Structures for Reflectance Mode Pulse Oximetry.

Published in:

Micromachines, 2025, v. 16, n. 5, p. 506, doi. 10.3390/mi16050506

By:

Špokas, Aivaras;
Zelioli, Andrea;
Bičiūnas, Andrius;
Čechavičius, Bronislovas;
Glemža, Justinas;
Pralgauskaitė, Sandra;
Kamarauskas, Mindaugas;
Bukauskas, Virginijus;
Spigulis, Janis;
Chiu, Yi-Jen;
Matukas, Jonas;
Butkutė, Renata

Publication type:

Article

Numerical Simulation of Waveguide Propagation Loss on Directly Bonded InP/Si Substrate.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 10, p. 6340, doi. 10.1007/s11664-024-11318-z

By:

Zhao, Liang;
Agata, Koji;
Yada, Ryosuke;
Shimomura, Kazuhiko

Publication type:

Article

National Primary Standard for the Unit of Average Laser Radiation Power Get 28-2013.

Published in:

Measurement Techniques, 2016, v. 58, n. 11, p. 1195, doi. 10.1007/s11018-016-0868-6

By:

Kovalev, A.;
Liberman, A.;
Mikryukov, A.;
Moskalyuk, S.;
Ulanovskii, M.

Publication type:

Article

Interband Cascade Lasers from a Historic Perspective to a Future Outlook.

Published in:

Photonics, 2025, v. 12, n. 2, p. 155, doi. 10.3390/photonics12020155

By:

Yang, Rui Q.;
Santos, Michael B.

Publication type:

Article

Analysis of GaN based high-power diode lasers after singular degradation events.

Published in:

Physica Status Solidi - Rapid Research Letters, 2017, v. 11, n. 7, p. n/a, doi. 10.1002/pssr.201700132

By:

Mura, Giovanna;
Vanzi, Massimo;
Hempel, Martin;
Tomm, Jens W.

Publication type:

Article

A Comparative Study of Violet InGaN Double Quantum Well Lasers with 1.89 and 0.80 eV InN Bandgap Energies.

Published in:

Lasers in Engineering (Old City Publishing), 2016, v. 34, n. 1-3, p. 183

By:

ALAHYARIZADEH, G.;
AMIRHOSEINY, M.;
RAHMANI, R.;
HASSAN, Z.

Publication type:

Article

Chaos and its characterization in multi-quantum-well laser with periodic-optical pulse injection.

Published in:

Optica Applicata, 2012, v. 42, n. 4, p. 761, doi. 10.5277/oa120408

By:

GUANG-YU JIANG;
YAN-JUN FU;
YAN HUANG;
QUAN-SHUI ZHU;
MING-GANG CHAI

Publication type:

Article

Effects of spontaneous emission excited state lifetime on the output performance of quantum well lasers.

Published in:

Optical & Quantum Electronics, 2017, v. 49, n. 6, p. 1, doi. 10.1007/s11082-017-1008-5

By:

Xia, Mingjun;
Ghafouri-Shiraz, H.

Publication type:

Article

Optical Gain of 1550-nm Range Multiple-Quantum-Well Heterostructures and Limiting Modulation Frequencies of Vertical-Cavity Surface-Emitting Lasers Based on Them.

Published in:

Optics & Spectroscopy, 2018, v. 125, n. 2, p. 238, doi. 10.1134/S0030400X18080143

By:

Kolodeznyi, E. S.;
Rochas, S. S.;
Kurochkin, A. S.;
Babichev, A. V.;
Novikov, I. I.;
Gladyshev, A. G.;
Karachinskii, L. Ya.;
Denisov, D. V.;
Bobretsova, Yu. K.;
Klimov, A. A.;
Blokhin, S. A.;
Voropaev, K. O.;
Ionov, A. S.

Publication type:

Article

Comprehension of the effects of gamma ray on luminescence intensity of GaN-based light-emitting diodes with multi-quantum well.

Published in:

Optics & Spectroscopy, 2012, v. 113, n. 2, p. 153, doi. 10.1134/S0030400X12080085

By:

Liu, Changshi

Publication type:

Article

Simulation of an AlGaInAs/InP Electro-Absorption Modulator Monolithically Integrated with Sidewall Grating Distributed Feedback Laser by Quantum Well Intermixing.

Published in:

Photonics, 2022, v. 9, n. 8, p. 564, doi. 10.3390/photonics9080564

By:

Sun, Xiao;
Cheng, Weiqing;
Sun, Yiming;
Ye, Shengwei;
Al-Moathin, Ali;
Huang, Yongguang;
Zhang, Ruikang;
Liang, Song;
Qiu, Bocang;
Xiong, Jichuan;
Liu, Xuefeng;
Marsh, John H.;
Hou, Lianping

Publication type:

Article

Recent Developments in Semipolar InGaN Laser Diodes.

Published in:

2021

By:

Das, Aparna

Publication type:

Literature Review

Performance Enhancement of GeSn Transistor Laser with Symmetric and Asymmetric Multiple Quantum Well in the Base.

Published in:

Semiconductors, 2020, v. 54, n. 1, p. 77, doi. 10.1134/S1063782620010212

By:

Soumava Ghosh;
Mukhopadhyay, Bratati;
Sen, Gopa

Publication type:

Article

Investigation of InGaAs/GaAs Quantum Well Lasers with Slightly Doped Tunnel Junction.

Published in:

Semiconductors, 2018, v. 52, n. 16, p. 2017, doi. 10.1134/S1063782618160169

By:

Yajie Li;
Wang, Pengfei;
Meng, Fangyuan;
Yu, Hongyan;
Zhou, Xuliang;
Wang, Huolei;
Pan, Jiaoqing

Publication type:

Article

Reduction of Internal Loss and Thermal Resistance in Diode Lasers with Coupled Waveguides.

Published in:

Semiconductors, 2018, v. 52, n. 11, p. 1462, doi. 10.1134/S1063782618110283

By:

Zhukov, A. E.;
Gordeev, N. Yu.;
Shernyakov, Yu. M.;
Payusov, A. S.;
Serin, A. A.;
Kulagina, M. M.;
Mintairov, S. A.;
Kalyuzhnyy, N. A.;
Maximov, M. V.

Publication type:

Article

Increase in the internal optical loss with increasing pump current and the output power of quantum well lasers.

Published in:

Semiconductors, 2017, v. 51, n. 7, p. 959, doi. 10.1134/S1063782617070326

By:

Sokolova, Z.;
Veselov, D.;
Pikhtin, N.;
Tarasov, I.;
Asryan, L.

Publication type:

Article

Specific features of waveguide recombination in laser structures with asymmetric barrier layers.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 254, doi. 10.1134/S1063782617020142

By:

Polubavkina, Yu.;
Zubov, F.;
Moiseev, E.;
Kryzhanovskaya, N.;
Maximov, M.;
Semenova, E.;
Yvind, K.;
Asryan, L.;
Zhukov, A.

Publication type:

Article

Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state filling.

Published in:

Semiconductors, 2016, v. 50, n. 10, p. 1362, doi. 10.1134/S1063782616100055

By:

Asryan, L.;
Zubov, F.;
Kryzhanovskaya, N.;
Maximov, M.;
Zhukov, A.

Publication type:

Article

Comparative analysis of the effects of electron and hole capture on the power characteristics of a semiconductor quantum-well laser.

Published in:

Semiconductors, 2015, v. 49, n. 11, p. 1506, doi. 10.1134/S1063782615110202

By:

Sokolova, Z.;
Pikhtin, N.;
Tarasov, I.;
Asryan, L.

Publication type:

Article

Current-injection efficiency in semiconductor lasers with a waveguide based on quantum wells.

Published in:

Semiconductors, 2014, v. 48, n. 1, p. 83, doi. 10.1134/S1063782614010023

By:

Afonenko, A.;
Ushakov, D.

Publication type:

Article

Temperature dependence of the threshold current in quantum-well WGM lasers (2.0-2.5 μm).

Published in:

Semiconductors, 2013, v. 47, n. 6, p. 831, doi. 10.1134/S1063782613060109

By:

Imenkov, A.;
Sherstnev, V.;
Kovalev, I.;
Il'inskaya, N.;
Serebrennikova, O.;
Teissier, R.;
Baranov, A.;
Yakovlev, Yu.

Publication type:

Article

Acoustoelectron interaction in quantum laser heterostructures.

Published in:

Semiconductors, 2013, v. 47, n. 1, p. 135, doi. 10.1134/S1063782613010168

By:

Kulakova, L.;
Averkiev, N.;
Lyutetskiy, A.;
Gorelov, V.

Publication type:

Article

Effect of asymmetric barrier layers in the waveguide region on the temperature characteristics of quantum-well lasers.

Published in:

Semiconductors, 2012, v. 46, n. 8, p. 1027, doi. 10.1134/S1063782612080246

By:

Zhukov, A.;
Asryan, L.;
Shernyakov, Yu.;
Maximov, M.;
Zubov, F.;
Kryzhanovskaya, N.;
Yvind, K.;
Semenova, E.

Publication type:

Article

QUANTUM CASCADE DETECTORS UNDER WEAK AND STRONG ELECTROMAGNETIC FIELDS.

Published in:

Journal of Physical Studies, 2012, v. 16, n. 4, p. 4701-1, doi. 10.30970/jps.16.4701

By:

Tkach, M. V.;
Seti, Ju. O.;
Matijek, V. O.;
Boyko, I. V.

Publication type:

Article

Numerical Investigation of InGaN Light-Emitting Diode with Al/In-Graded p-AlGaN/InGaN Superlattice Electron-Blocking Layer.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 2, p. 1100, doi. 10.1007/s11664-016-5082-4

By:

Zeng, Si-Ming;
Zheng, Shu-Wen;
Fan, Guang-Han

Publication type:

Article

Room-Temperature Quantum Cascade Laser: ZnO/ZnMgO Versus GaN/AlGaN.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 882, doi. 10.1007/s11664-013-2548-5

By:

Chou, Hung;
Mazady, Anas;
Zeller, John;
Manzur, Tariq;
Anwar, Mehdi

Publication type:

Article

ZnO/ZnMgO: cubic quantum well laser in UV spectrum.

Published in:

International Journal of Advanced Manufacturing Technology, 2017, v. 89, n. 1-4, p. 629, doi. 10.1007/s00170-016-9105-3

By:

Riane, H.;
Mokaddem, A.;
Temimi, L.;
Doumi, B.;
Bahlouli, S.;
Hamdache, F.

Publication type:

Article

Gain Characteristics of Optically Pumped UVC Lasers with Wide AlGaN Single‐Quantum‐Well Active Regions.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 21, p. 1, doi. 10.1002/pssa.202400067

By:

Cardinali, Giulia;
Kölle, Sebastian;
Schulz, Alexander;
Susilo, Norman;
Hauer Vidal, Daniel;
Guttmann, Martin;
Blonski, Markus A.;
Römer, Friedhard;
Witzigmann, Bernd;
Nippert, Felix;
Wagner, Markus R.;
Wernicke, Tim;
Kneissl, Michael

Publication type:

Article

Radiation and Emission in Materials: Similarity of Principles and Multi‐Functional Applications.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2021, v. 218, n. 1, p. 1, doi. 10.1002/pssa.202000772

By:

Kuznetsov, Andrej;
Dangtip, Somsak;
Intarasiri, Saweat

Publication type:

Article

AlGaInAs/InP Based Five & Three Quantum Wells Mode Locked Laser Diodes: A Comparative Study.

Published in:

Electronics & Electrical Engineering, 2020, v. 26, n. 5, p. 22, doi. 10.5755/j01.eie.26.5.26002

By:

Akbar, Jehan;
Hanif, Muhammad;
Naeem, Muhammad Azhar;
Abid, Kamran

Publication type:

Article

InGaN tandem blue-violet quantum well lasers with high frequency self-pulsations.

Published in:

Optical & Quantum Electronics, 2015, v. 47, n. 5, p. 1047, doi. 10.1007/s11082-014-9960-9

By:

Tronciu, V.;
Rusu, S.;
Yamada, Minoru

Publication type:

Article

Numerical analysis of InGaAs-InP multiple-quantum well laser emitting at 2 $${\upmu }$$ m.

Published in:

Optical & Quantum Electronics, 2014, v. 46, n. 7, p. 851, doi. 10.1007/s11082-013-9796-8

By:

Al-Muhanna, Abdulrahman;
Salhi, Abdelmajid

Publication type:

Article

Monolithic QW laser beam steering and wavelength tunability.

Published in:

Optical & Quantum Electronics, 2014, v. 46, n. 2, p. 331, doi. 10.1007/s11082-013-9763-4

By:

Zakariya, Abdullah;
LiKamWa, Patrick

Publication type:

Article

An equivalent circuit model for the long-wavelength quantum well infrared photodetectors.

Published in:

Optical & Quantum Electronics, 2013, v. 45, n. 7, p. 649, doi. 10.1007/s11082-012-9650-4

By:

Li, L.;
Xiong, D.;
Wen, J.;
Weng, Q.

Publication type:

Article

Transient characteristics of the InGaP-GaAs-InGaAs-GaAs transistor laser.

Published in:

Optical & Quantum Electronics, 2013, v. 45, n. 6, p. 543, doi. 10.1007/s11082-013-9680-6

By:

Habib, Md;
Ullah, Saeed;
Rafique, Shahida

Publication type:

Article

Analysis of linewidth enhancement factor for compressively strained AlGaInAs and InGaAsP quantum well lasers.

Published in:

Optical & Quantum Electronics, 2013, v. 45, n. 1, p. 35, doi. 10.1007/s11082-012-9600-1

By:

Sapkota, Durga;
Kayastha, Madhu;
Wakita, Koichi

Publication type:

Article

Intensity noise of mode-locked fiber grating external cavity semiconductor lasers.

Published in:

Optical & Quantum Electronics, 2003, v. 35, n. 2, p. 169, doi. 10.1023/A:1022438208201

By:

Dogru, N.;
Ozyazici, M.

Publication type:

Article

Repetition rate control of optical self-injected passively mode-locked quantum-well lasers: experiment and simulation.

Published in:

Electronics Letters (Wiley-Blackwell), 2018, v. 54, n. 6, p. 374, doi. 10.1049/el.2017.4768

By:

Auth, D.;
Drzewietzki, L.;
Weber, C.;
Klehr, A.;
Knigge, A.;
Breuer, S.

Publication type:

Article

Electrical injection type-II (GaIn)As/Ga (AsSb)/(GaIn)As single 'W'-quantum well laser at 1.2 μm.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 22, p. 45, doi. 10.1049/el.2016.2851

By:

Fuchs, C.;
Berger, C.;
Möller, C.;
Weseloh, M.;
Reinhard, S.;
Hader, J.;
Moloney, J. V.;
Koch, S. W.;
Stolz, W.

Publication type:

Article

High-power epitaxial-side down mounted terahertz quantum cascade lasers.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 16, p. 1401, doi. 10.1049/el.2016.1802

By:

Yuanyuan Li;
Tao Wang;
Shenqiang Zhai;
Junqi Liu;
Fengqi Liu;
Zhanguo Wang

Publication type:

Article

Suppression of sublinearity of light-current curve in 850 nm quantum well laser with asymmetric barrier layers.

Published in:

Electronics Letters (Wiley-Blackwell), 2015, p. 1106, doi. 10.1049/el.2015.1392

By:

Zubov, F. I.;
Maximov, M. V.;
Shernyakov, Yu. M.;
Kryzhanovskaya, N. V.;
Semenova, E. S.;
Yvind, K.;
Asryan, L. V.;
Zhukov, A. E.

Publication type:

Article

rainbow bridges.

Published in:: Electronics Letters (Wiley-Blackwell), 2015, v. 51, n. 14, p. 1042, doi. 10.1049/el.2015.2124
Publication type:: Article

InGaAs/GaAs quantum well lasers grown on exact GaP/Si (001).

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 17, p. 1226, doi. 10.1049/el.2014.2077

By:

Xue Huang;
Yuncheng Song;
Taizo Masuda;
Daehwan Jung;
Minjoo Lee

Publication type:

Article

in brief.

Published in:: Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 17, p. 1176, doi. 10.1049/el.2014.2792
Publication type:: Article

Dynamic characteristics of InGaAs/InP multiple quantum well discrete mode laser diodes emitting at 2 μm.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 13, p. 948, doi. 10.1049/el.2013.3257

By:

O'Carroll, J.;
Byrne, D.;
Kelly, B.;
Phelan, R.;
Gunning, F. C. G.;
Anandarajah, P. M.;
Barry, L. P.

Publication type:

Article

Terahertz quantum cascade lasers with >1 W output powers.

Published in:

Electronics Letters (Wiley-Blackwell), 2014, v. 50, n. 4, p. 309, doi. 10.1049/el.2013.4035

By:

Lianhe Li;
Li Chen;
Jingxuan Zhu;
Freeman, J.;
Dean, P.;
Valavanis, A.;
Davies, A. G.;
Linfield, E. H.

Publication type:

Article

Monolithically integrated terahertz quantum cascade array laser.

Published in:

Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 25, p. 1632, doi. 10.1049/el.2013.3456

By:

Jian-Yan Chen;
Junqi Liu;
Tao Wang;
Fengqi Liu;
Zhanguo Wang

Publication type:

Article

9.5 dB relative intensity noise reduction in quantum cascade laser by detuned loading.

Published in:

Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 24, p. 1, doi. 10.1049/el.2013.2366

By:

Juretzka, C.;
Breuer, S.;
Drzewietzki, L.;
Schad, F.;
Carras, M.;
Elsäßer, W.

Publication type:

Article

On the double.

Published in:: Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 19, p. 1194, doi. 10.1049/el.2013.2870
Publication type:: Article

InAs/AlSb quantum cascade lasers operating near 20 μm.

Published in:

Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 19, p. 1, doi. 10.1049/el.2013.2412

By:

Bahriz, M.;
Lollia, G.;
Laffaille, P.;
Baranov, A. N.;
Teissier, R.

Publication type:

Article