Works matching DE "QUANTUM well devices"

Results: 75

Caracterización del coeficiente de ganancia y electroabsorción de una muestra de pozos cuánticos de AlGaAs.

Published in:

Revista Cubana de Física, 2010, v. 27, n. 1, p. 45

By:

García Lara, Carlos;
Vázquez, R.;
Mendoza, S.;
Camas, J.

Publication type:

Article

New Architecture of ZnGeN2/In0.16Ga0.84N Type‐II Quantum Well‐Based Green Emitting LED.

Published in:

Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 8, p. 1, doi. 10.1002/pssr.201800173

By:

Rolles, Mélanie;
Hyot, Bérangère;
Miska, Patrice

Publication type:

Article

Quantum efficiency of InAs/InP nanowire heterostructures grown on silicon substrates.

Published in:

Physica Status Solidi - Rapid Research Letters, 2013, v. 7, n. 10, p. 878, doi. 10.1002/pssr.201307242

By:

Anufriev, Roman;
Chauvin, Nicolas;
Khmissi, Hammadi;
Naji, Khalid;
Patriarche, Gilles;
Gendry, Michel;
Bru‐Chevallier, Catherine

Publication type:

Article

Investigation of Ultra-Wide Reflection Bands in UV Region by Using One-Dimensional Multi Quantum Well Photonic Crystal.

Published in:

Progress in Electromagnetics Research M, 2014, v. 38, p. 37, doi. 10.2528/pierm14062308

By:

Srivastava, Sanjeev K.

Publication type:

Article

Temperature Gradient Effects on Spin Torque in Double Barrier Magnetic Tunnel Junctions with a Non-magnetic Metal Spacer.

Published in:

Journal of Superconductivity & Novel Magnetism, 2017, v. 30, n. 6, p. 1593, doi. 10.1007/s10948-016-3959-3

By:

Daqiq, Reza

Publication type:

Article

Polarization dependence of patterning effects in quantum well semiconductor optical amplifier-based wavelength conversion.

Published in:

Optica Applicata, 2015, v. 45, n. 2, p. 163, doi. 10.5277/oa150203

By:

CUI QIN;
WEIKANG SHEN;
JING ZHAO;
HUILONG YU;
ENMING XU

Publication type:

Article

Chaos and its characterization in multi-quantum-well laser with periodic-optical pulse injection.

Published in:

Optica Applicata, 2012, v. 42, n. 4, p. 761, doi. 10.5277/oa120408

By:

GUANG-YU JIANG;
YAN-JUN FU;
YAN HUANG;
QUAN-SHUI ZHU;
MING-GANG CHAI

Publication type:

Article

A comparative study of AlGaN and BAlGaN based ultraviolet quantum well-based light emitting diodes.

Published in:

Optical & Quantum Electronics, 2024, v. 56, n. 4, p. 1, doi. 10.1007/s11082-023-06270-x

By:

Dhivyasri, G.;
Manikandan, M.;
Ajayan, J.;
Sreejith, S.;
Remya, R.;
Nirmal, D.

Publication type:

Article

Importance of satisfying thermodynamic consistency in optoelectronic device simulations for high carrier densities.

Published in:

Optical & Quantum Electronics, 2023, v. 55, n. 11, p. 1, doi. 10.1007/s11082-023-05234-5

By:

Farrell, Patricio;
Moatti, Julien;
O'Donovan, Michael;
Schulz, Stefan;
Koprucki, Thomas

Publication type:

Article

Calculation of intersubband absorption in n-doped BaSnO3 quantum wells.

Published in:

Optical & Quantum Electronics, 2023, v. 55, n. 4, p. 1, doi. 10.1007/s11082-023-04656-5

By:

Stanojević, Novak;
Vuković, Nikola;
Radovanović, Jelena

Publication type:

Article

Increasing the internal quantum efficiency of green GaN-based light-emitting diodes by employing graded quantum well and electron blocking layer.

Published in:

Optical & Quantum Electronics, 2020, v. 52, n. 6, p. 1, doi. 10.1007/s11082-020-02423-4

By:

Usman, Muhammad;
Anwar, Abdur-Rehman;
Munsif, Munaza;
Malik, Shahzeb;
Islam, Noor Ul;
Jameel, Tariq

Publication type:

Article

Highly efficient nonreciprocity and nonreciprocal photonic devices in a semiconductor quantum well.

Published in:

European Physical Journal D (EPJ D), 2024, v. 78, n. 12, p. 1, doi. 10.1140/epjd/s10053-024-00937-0

By:

Ge, Yunran;
Zheng, Kang;
Fang, Boxiang;
Ding, Chunling;
Hao, Xiangying;
Jin, Rui-Bo

Publication type:

Article

High Efficiency Inverted GaAs and GaInP/GaAs Solar Cells With Strain‐Balanced GaInAs/GaAsP Quantum Wells.

Published in:

Advanced Energy Materials, 2021, v. 11, n. 4, p. 1, doi. 10.1002/aenm.202002874

By:

Steiner, Myles A.;
France, Ryan M.;
Buencuerpo, Jeronimo;
Geisz, John F.;
Nielsen, Michael P.;
Pusch, Andreas;
Olavarria, Waldo J.;
Young, Michelle;
Ekins‐Daukes, Nicholas J.

Publication type:

Article

Self-Consistent Simulation of GaAs/InGaAs/AlGaAs Heterostructures Photoluminescence Spectra and Its Application to pHEMT Structures Diagnostics.

Published in:

Semiconductors, 2018, v. 52, n. 4, p. 507, doi. 10.1134/S106378261804022X

By:

Mironova, M. S.;
Zubkov, V. I.;
Dudin, A. L.;
Glinskii, G. F.

Publication type:

Article

Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots.

Published in:

Semiconductors, 2017, v. 51, n. 11, p. 1395, doi. 10.1134/S1063782617110136

By:

Gorshkov, A.;
Volkova, N.;
Voronin, P.;
Zdoroveyshchev, A.;
Istomin, L.;
Pavlov, D.;
Usov, Yu.;
Levichev, S.

Publication type:

Article

On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes.

Published in:

Semiconductors, 2017, v. 51, n. 2, p. 232, doi. 10.1134/S1063782617020166

By:

Prudaev, I.;
Kopyev, V.;
Romanov, I.;
Oleynik, V.

Publication type:

Article

Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers.

Published in:

Semiconductors, 2015, v. 49, n. 2, p. 224, doi. 10.1134/S1063782615020104

By:

Gulyaev, D.;
Zhuravlev, K.;
Bakarov, A.;
Toropov, A.

Publication type:

Article

Technology and electronic properties of PHEMT AlGaAs/InGaAs/GaAs compositionally graded quantum wells.

Published in:

Semiconductors, 2014, v. 48, n. 9, p. 1226, doi. 10.1134/S1063782614090255

By:

Vasil'evskii, I.;
Vinichenko, A.;
Grekhov, M.;
Gladkov, V.;
Kargin, N.;
Strikhanov, M.

Publication type:

Article

Far-infrared radiation from n-InGaAs/GaAs quantum-well heterostructures in high lateral electric fields under injection conditions.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 625, doi. 10.1134/S1063782614050029

By:

Belevskii, P.;
Vinoslavkii, M.;
Poroshin, V.;
Baidus, N.;
Zvonkov, B.

Publication type:

Article

Mechanism of terahertz photoconductivity in semimetallic HgTe/CdHgTe quantum wells.

Published in:

Semiconductors, 2012, v. 46, n. 5, p. 655, doi. 10.1134/S1063782612050247

By:

Vasilyev, Yu.;
Mikhailov, N.;
Gouider, F.;
Vasilyeva, G.;
Nachtwei, G.

Publication type:

Article

Low-frequency noise in as-fabricated and degraded blue InGaAs/GaN LEDs.

Published in:

Semiconductors, 2012, v. 46, n. 2, p. 208, doi. 10.1134/S106378261202025X

By:

Zakheim, A.;
Levinshtein, M.;
Petrov, V.;
Chernyakov, A.;
Shabunina, E.;
Shmidt, N.

Publication type:

Article

Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 9, p. 5138, doi. 10.1007/s11664-020-08159-x

By:

Netzel, C.;
Hoffmann, V.;
Einfeldt, S.;
Weyers, M.

Publication type:

Article

Enhancement of Multisubband Electron Mobility in Barrier Delta-Doped Asymmetric GaAs/AlGaAs Double Quantum Well Structure.

Published in:

IETE Technical Review, 2016, v. 33, n. 1, p. 17, doi. 10.1080/02564602.2015.1043150

By:

Das, Sudhakar;
Nayak, Rasmita Kumari;
Sahu, Trinath;
Panda, Ajit Kumar

Publication type:

Article

Fabrication of Nitrogen Vacancy Center‐Doped Free‐Standing Diamond Photonic Devices via Faraday Cage‐Angled Etching.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 8, p. 1, doi. 10.1002/pssa.202300433

By:

Giese, Christian;
Quellmalz, Patricia;
Knittel, Peter;
Luo, Tingpeng;
Mathes, Niklas;
Jeske, Jan;
Reinke, Philipp;
Yang, Quankui

Publication type:

Article

Internal piezoelectric field and Auger recombination in InGaN/GaN quantum wells: impact on device performance: Internal piezoelectric field and Auger...: D. Samosvat et al.

Published in:

Applied Physics A: Materials Science & Processing, 2025, v. 131, n. 2, p. 1, doi. 10.1007/s00339-024-08219-7

By:

Samosvat, Dmitriy;
Karpova, Anastasia;
Zegrya, Georgy

Publication type:

Article

Negative and positive magnetoresistance in GaInNAs/GaAs modulation-doped quantum well structures.

Published in:

Applied Physics A: Materials Science & Processing, 2015, v. 118, n. 3, p. 823, doi. 10.1007/s00339-014-8852-y

By:

Nutku, Ferhat;
Donmez, Omer;
Sarcan, Fahrettin;
Erol, Ayşe;
Puustinen, Janne;
Arıkan, Mehmet;
Guina, Mircea

Publication type:

Article

Electronic transitions in single and double quantum wells made of III-V compound semiconductors.

Published in:

Superficies y Vacío, 2013, v. 26, n. 4, p. 126

By:

Velásquez-Arriaga, A.;
Hernández-Rosas, J.;
Ponce, H.;
López-López, M.

Publication type:

Article

Physical modeling of an optical memory cell based on quantum dot-in-well hybrid structure.

Published in:

Optical & Quantum Electronics, 2013, v. 45, n. 7, p. 699, doi. 10.1007/s11082-013-9663-7

By:

Ding, L.;
Fan, L.;
Li, Y.;
Guo, F.

Publication type:

Article

Dark current modeling of InP based SWIR and MWIR InGaAs/GaAsSb type-II MQW photodiodes.

Published in:

Optical & Quantum Electronics, 2013, v. 45, n. 3, p. 271, doi. 10.1007/s11082-012-9624-6

By:

Chen, Baile;
Yuan, Jinrong;
Holmes, A.

Publication type:

Article

Design of micro resonator quantum well intensity modulator.

Published in:

Optical & Quantum Electronics, 2012, v. 44, n. 14, p. 635, doi. 10.1007/s11082-012-9581-0

By:

Zhang, Yan;
Pile, Brian;
Taylor, Geoff

Publication type:

Article

Corrigendum: Two-colour terahertz quantum well photodetectors.

Published in:: 2017
Publication type:: Correction Notice

Two-colour THz quantum well photodetectors.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 16, p. 1129, doi. 10.1049/el.2017.1536

By:

Haixia Wang;
Rong Zhang;
Feng Wang;
Zhejing Jiao;
Dixiang Shao;
Zhanglong Fu;
Tao Zhou;
Zhiyong Tan;
Jungcheng Cao

Publication type:

Article

fast terahertz detection.

Published in:: Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 2, p. 55, doi. 10.1049/el.2016.4592
Publication type:: Article

50 Gbit/s uncooled operation (5-85°C) of 1.3 μm electroabsorption modulator integrated with DFB laser.

Published in:

Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 3, p. 74, doi. 10.1049/el.2012.4148

By:

Fujisawa, T.;
Kanazawa, S.;
Kobayashi, W.;
Takahata, K.;
Ohki, A.;
Iga, R.;
Ishii, H.

Publication type:

Article

Engineering the interlayer exchange coupling in magnetic trilayers.

Published in:

Scientific Reports, 2015, p. 16844, doi. 10.1038/srep16844

By:

Chang, Ching-Hao;
Dou, Kun-Peng;
Chen, Ying-Chin;
Hong, Tzay-Ming;
Kaun, Chao-Cheng

Publication type:

Article

Semiconductor Nanomaterials for Optoelectronic Applications.

Published in:

Nanomaterials (2079-4991), 2024, v. 14, n. 23, p. 1896, doi. 10.3390/nano14231896

By:

Lo, Ikai

Publication type:

Article

Revealing the Exciton Fine Structure in Lead Halide Perovskite Nanocrystals.

Published in:

Nanomaterials (2079-4991), 2021, v. 11, n. 4, p. 1058, doi. 10.3390/nano11041058

By:

Hou, Lei;
Tamarat, Philippe;
Lounis, Brahim;
Aldakov, Dmitry;
Mahler, Benoît

Publication type:

Article

Electronic states in core/shell GaN/YGaN quantum well (QW) with the modified Pöschl-Teller plus Woods-Saxon potential in the presence of electric field.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2017, v. 31, n. 15, p. -1, doi. 10.1142/S0217979217501193

By:

Onyeaju, M. C.;
Ikot, A. N.;
Onate, C. A.;
Aghemenloh, E.;
Hassanabadi, H.

Publication type:

Article

Simultaneous effects of pressure and temperature on excitons in Pöschl-Teller quantum well.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2017, v. 31, n. 8, p. -1, doi. 10.1142/S0217979217500503

By:

Anitha, A.;
Arulmozhi, M.

Publication type:

Article

Getting there.

Published in:: Nature Physics, 2015, v. 11, n. 4, p. 289, doi. 10.1038/nphys3312
Publication type:: Article

Water‐Driven Synthesis of Deep‐Blue Perovskite Colloidal Quantum Wells for Electroluminescent Devices.

Published in:

Angewandte Chemie, 2023, v. 135, n. 12, p. 1, doi. 10.1002/ange.202300149

By:

Zhang, Mengqi;
Bi, Chenghao;
Xia, Yuexing;
Sun, Xuejiao;
Wang, Xingyu;
Liu, Aqiang;
Tian, Shuyu;
Liu, Xinfeng;
de Leeuw, Nora H.;
Tian, Jianjun

Publication type:

Article

Resonance-Enhanced Quantum Well Micropillar Array with Ultra-Narrow Bandwidth and Ultra-High Peak Quantum Efficiency.

Published in:

Electronics (2079-9292), 2022, v. 11, n. 9, p. N.PAG, doi. 10.3390/electronics11091396

By:

Shao, Hanxiao;
Xu, Yun;
Lv, Longfeng;
Cheng, Bo;
Song, Guofeng

Publication type:

Article

ORGANIC LIGHT-EMITTING DEVICES WITH QUANTUM WELL STRUCTURES USING CARBAZOLE DERIVATIVE 4CZTPN-PH AS AN EMITTING MATERIAL.

Published in:

Ukrainian Journal of Physical Optics, 2025, v. 26, n. 1, p. 01009, doi. 10.3116/16091833/Ukr.J.Phys.Opt.2025.01009

By:

DEVA, L.;
STAKHIRA, P.;
FITIO, V.;
DEBATA, S.;
DEV, P.;
KARAUSH-KARMAZIN, N.;
KUZYK, N.;
YAREMCHUK, I.;
VOLYNIUK, D.

Publication type:

Article

SCANNING MICROWAVE IMPEDANCE MICROSCOPY: OVERVIEW AND LOW TEMPERATURE OPERATION.

Published in:

Electronic Device Failure Analysis, 2023, v. 25, n. 1, p. 9, doi. 10.31399/asm.edfa.2023-1.p009

By:

Antoniou, Nicholas

Publication type:

Article

Quantum k-community detection: algorithm proposals and cross-architectural evaluation.

Published in:

Quantum Information Processing, 2021, v. 20, n. 9, p. 1, doi. 10.1007/s11128-021-03239-1

By:

Gemeinhardt, Felix G.;
Wille, Robert;
Wimmer, Manuel

Publication type:

Article

High-Temperature Electron-Hole Liquid in Diamond Films.

Published in:

Russian Physics Journal, 2018, v. 61, n. 7, p. 1358, doi. 10.1007/s11182-018-1541-0

By:

Vasilchenko, A. A.;
Kopytov, G. F.

Publication type:

Article

Micro-Raman characterization of InGaN/GaN single quantum well nanocolumns on Si(111) substrate.

Published in:

Journal of Applied Spectroscopy, 2013, v. 80, n. 4, p. 565, doi. 10.1007/s10812-013-9806-4

By:

Sangeetha, P.;
Sasirekha, V.;
Vadivelu, R.;
Kishino, K.;
Ramakrishnan, V.

Publication type:

Article

Dynamical characteristics of AC-driven hybrid WSe2 monolayer/AlGaInP quantum wells light-emitting device.

Published in:

Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03920-7

By:

Konthoujam, James Singh;
Lin, Yen-Shou;
Chang, Ya-Hui;
Lin, Hsiang-Ting;
Chang, Chiao-Yun;
Zhang, Yu-Wei;
Lin, Shih-Yen;
Kuo, Hao-Chung;
Shih, Min-Hsiung

Publication type:

Article

Digital simulation of convex mixtures of Markovian and non-Markovian single qubit Pauli channels on NISQ devices.

Published in:

EPJ Quantum Technology, 2024, v. 11, n. 1, p. 1, doi. 10.1140/epjqt/s40507-024-00224-2

By:

David, I. J.;
Sinayskiy, I.;
Petruccione, F.

Publication type:

Article

Direct observation of nanometer size hydride precipitations in superconducting niobium.

Published in:

Scientific Reports, 2024, v. 14, n. 1, p. 1, doi. 10.1038/s41598-024-77905-6

By:

Sung, Zuhawn;
Cano, Arely;
Murthy, Akshay;
Bafia, Daniel;
Karapetrova, Evguenia;
Martinello, Martina;
Lee, Jaeyel;
Grassellino, Anna;
Romanenko, Alexander

Publication type:

Article