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Fabrication of Nitrogen Vacancy Center‐Doped Free‐Standing Diamond Photonic Devices via Faraday Cage‐Angled Etching.
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- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 8, p. 1, doi. 10.1002/pssa.202300433
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- Article
A comparative study of AlGaN and BAlGaN based ultraviolet quantum well-based light emitting diodes.
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- Optical & Quantum Electronics, 2024, v. 56, n. 4, p. 1, doi. 10.1007/s11082-023-06270-x
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- Article
Digital simulation of convex mixtures of Markovian and non-Markovian single qubit Pauli channels on NISQ devices.
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- EPJ Quantum Technology, 2024, v. 11, n. 1, p. 1, doi. 10.1140/epjqt/s40507-024-00224-2
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- Article
Dynamical characteristics of AC-driven hybrid WSe<sub>2</sub> monolayer/AlGaInP quantum wells light-emitting device.
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- Discover Nano, 2023, v. 18, n. 1, p. 1, doi. 10.1186/s11671-023-03920-7
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- Article
Importance of satisfying thermodynamic consistency in optoelectronic device simulations for high carrier densities.
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- Optical & Quantum Electronics, 2023, v. 55, n. 11, p. 1, doi. 10.1007/s11082-023-05234-5
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- Article
Calculation of intersubband absorption in n-doped BaSnO<sub>3</sub> quantum wells.
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- Optical & Quantum Electronics, 2023, v. 55, n. 4, p. 1, doi. 10.1007/s11082-023-04656-5
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- Article
Water‐Driven Synthesis of Deep‐Blue Perovskite Colloidal Quantum Wells for Electroluminescent Devices.
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- Angewandte Chemie, 2023, v. 135, n. 12, p. 1, doi. 10.1002/ange.202300149
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- Article
Study of short-wavelength red semiconductor laser using high Ga composition GaInP quantum well based on Ge/SiGe substrate.
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- Applied Physics B: Lasers & Optics, 2023, v. 129, n. 3, p. 1, doi. 10.1007/s00340-023-07992-2
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- Article
The Historical Development of Infrared Photodetection Based on Intraband Transitions.
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- Materials (1996-1944), 2023, v. 16, n. 4, p. 1562, doi. 10.3390/ma16041562
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- Article
SCANNING MICROWAVE IMPEDANCE MICROSCOPY: OVERVIEW AND LOW TEMPERATURE OPERATION.
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- Electronic Device Failure Analysis, 2023, v. 25, n. 1, p. 9, doi. 10.31399/asm.edfa.2023-1.p009
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- Article
Variational quantum eigensolver with reduced circuit complexity.
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- NPJ Quantum Information, 2022, v. 8, n. 1, p. 1, doi. 10.1038/s41534-022-00599-z
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- Article
Resonance-Enhanced Quantum Well Micropillar Array with Ultra-Narrow Bandwidth and Ultra-High Peak Quantum Efficiency.
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- Electronics (2079-9292), 2022, v. 11, n. 9, p. N.PAG, doi. 10.3390/electronics11091396
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- Article
Propagation Delay Evaluation for Spatial Wavefunction Switched (SWS) FET-Based Inverter.
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- International Journal of High Speed Electronics & Systems, 2022, v. 31, n. 1/4, p. 1, doi. 10.1142/S0129156422400080
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- Article
Quantum k-community detection: algorithm proposals and cross-architectural evaluation.
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- Quantum Information Processing, 2021, v. 20, n. 9, p. 1, doi. 10.1007/s11128-021-03239-1
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- Article
Revealing the Exciton Fine Structure in Lead Halide Perovskite Nanocrystals.
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- Nanomaterials (2079-4991), 2021, v. 11, n. 4, p. 1058, doi. 10.3390/nano11041058
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- Article
High Efficiency Inverted GaAs and GaInP/GaAs Solar Cells With Strain‐Balanced GaInAs/GaAsP Quantum Wells.
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- Advanced Energy Materials, 2021, v. 11, n. 4, p. 1, doi. 10.1002/aenm.202002874
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- Article
Systematic studies for improving device performance of quantum well infrared stripe photodetectors.
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- Nanophotonics (21928606), 2020, v. 9, n. 10, p. 3373, doi. 10.1515/nanoph-2020-0095
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- Article
Optimization of the Epitaxial Growth of Undoped GaN Waveguides in GaN-Based Laser Diodes Evaluated by Photoluminescence.
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- Journal of Electronic Materials, 2020, v. 49, n. 9, p. 5138, doi. 10.1007/s11664-020-08159-x
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- Article
Wide spectrum terahertz quantum well photodetector.
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- Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 16, p. 843, doi. 10.1049/el.2020.0686
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- Article
Increasing the internal quantum efficiency of green GaN-based light-emitting diodes by employing graded quantum well and electron blocking layer.
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- Optical & Quantum Electronics, 2020, v. 52, n. 6, p. 1, doi. 10.1007/s11082-020-02423-4
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- Article
High-Temperature Electron-Hole Liquid in Diamond Films.
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- Russian Physics Journal, 2018, v. 61, n. 7, p. 1358, doi. 10.1007/s11182-018-1541-0
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- Article
New Architecture of ZnGeN<sub>2</sub>/In<sub>0.16</sub>Ga<sub>0.84</sub>N Type‐II Quantum Well‐Based Green Emitting LED.
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- Physica Status Solidi - Rapid Research Letters, 2018, v. 12, n. 8, p. 1, doi. 10.1002/pssr.201800173
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- Article
Self-Consistent Simulation of GaAs/InGaAs/AlGaAs Heterostructures Photoluminescence Spectra and Its Application to pHEMT Structures Diagnostics.
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- Semiconductors, 2018, v. 52, n. 4, p. 507, doi. 10.1134/S106378261804022X
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- Article
Theoretical Thermal Characterization of 1.55 μm InGaN Quantum Well Lasers.
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- International Journal of Microwave & Optical Technology, 2017, v. 12, n. 6, p. 484
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- Article
Effect of the cap-layer composition on the electronic properties of InAs/GaAs quantum dots.
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- Semiconductors, 2017, v. 51, n. 11, p. 1395, doi. 10.1134/S1063782617110136
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- Article
On the origin of nonclassical light generation upon resonant excitation of a GaAs semiconductor microcavity.
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- JETP Letters, 2017, v. 106, n. 8, p. 549, doi. 10.1134/S0021364017200073
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- Article
Two-colour THz quantum well photodetectors.
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- Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 16, p. 1129, doi. 10.1049/el.2017.1536
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- Article
Corrigendum: Two-colour terahertz quantum well photodetectors.
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- 2017
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- Correction Notice
Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi-bulk InGaN buffer for blue to green regime emission.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 8, p. n/a, doi. 10.1002/pssa.201600868
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- Article
V-shaped semipolar InGaN/GaN multi-quantum-well light-emitting diodes directly grown on c-plane patterned sapphire substrates.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 8, p. n/a, doi. 10.1002/pssa.201600810
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- Article
Electronic states in core/shell GaN/YGaN quantum well (QW) with the modified Pöschl-Teller plus Woods-Saxon potential in the presence of electric field.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2017, v. 31, n. 15, p. -1, doi. 10.1142/S0217979217501193
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- Article
Temperature Gradient Effects on Spin Torque in Double Barrier Magnetic Tunnel Junctions with a Non-magnetic Metal Spacer.
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- Journal of Superconductivity & Novel Magnetism, 2017, v. 30, n. 6, p. 1593, doi. 10.1007/s10948-016-3959-3
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- Article
Simultaneous effects of pressure and temperature on excitons in Pöschl-Teller quantum well.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2017, v. 31, n. 8, p. -1, doi. 10.1142/S0217979217500503
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- Article
Annealing effects on the properties of InGaAsN/GaAsSb type-II quantum well diodes grown on InP substrates.
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- Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600510
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- Article
On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes.
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- Semiconductors, 2017, v. 51, n. 2, p. 232, doi. 10.1134/S1063782617020166
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- Article
fast terahertz detection.
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- Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 2, p. 55, doi. 10.1049/el.2016.4592
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- Article
Long-Range Surface Plasmon Polaritons for Efficient Optical Coupling in AlGaN/GaN Quantum Well Infrared Photodetector.
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- Plasmonics, 2016, v. 11, n. 3, p. 833, doi. 10.1007/s11468-015-0116-y
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- Article
Engineering the interlayer exchange coupling in magnetic trilayers.
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- Scientific Reports, 2015, p. 16844, doi. 10.1038/srep16844
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- Article
Sequential Logic Circuits Using Spatial Wavefunction Switched (SWS) FETs.
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- International Journal of High Speed Electronics & Systems, 2015, v. 24, n. 3/4, p. -1, doi. 10.1142/S0129156415500111
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- Article
Polarization dependence of patterning effects in quantum well semiconductor optical amplifier-based wavelength conversion.
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- Optica Applicata, 2015, v. 45, n. 2, p. 163, doi. 10.5277/oa150203
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- Article
Getting there.
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- Nature Physics, 2015, v. 11, n. 4, p. 289, doi. 10.1038/nphys3312
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- Article
Negative and positive magnetoresistance in GaInNAs/GaAs modulation-doped quantum well structures.
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- Applied Physics A: Materials Science & Processing, 2015, v. 118, n. 3, p. 823, doi. 10.1007/s00339-014-8852-y
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- Article
Identification of photoluminescence bands in AlGaAs/InGaAs/GaAs PHEMT heterostructures with donor-acceptor-doped barriers.
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- Semiconductors, 2015, v. 49, n. 2, p. 224, doi. 10.1134/S1063782615020104
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- Article
Electron g-Factor in Diluted Magnetic Semiconductor Quantum Well with Parabolic Potential in the Presence of Rashba Effect and Magnetic Field.
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- Zeitschrift für Naturforschung Section A: A Journal of Physical Sciences, 2015, v. 70, n. 2, p. 109, doi. 10.1515/zna-2014-0254
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- Article
Temperature-dependent investigation of carrier transport, injection, and densities in AlGaAs-based multi-quantum-well active layers for vertical-cavity surface-emitting lasers.
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- Optical Engineering, 2015, v. 54, n. 1, p. 1, doi. 10.1117/1.OE.54.1.016107
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- Article
Technology and electronic properties of PHEMT AlGaAs/InGaAs/GaAs compositionally graded quantum wells.
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- Semiconductors, 2014, v. 48, n. 9, p. 1226, doi. 10.1134/S1063782614090255
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- Article
Anomalous excitation-power-dependent photoluminescence of InGaAsN/GaAs T-shaped quantum wire.
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- Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 8, p. 1740, doi. 10.1002/pssa.201330543
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- Article
Investigation of Ultra-Wide Reflection Bands in UV Region by Using One-Dimensional Multi Quantum Well Photonic Crystal.
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- Progress in Electromagnetics Research M, 2014, v. 38, p. 37, doi. 10.2528/pierm14062308
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- Article
Performance evaluation of quantum well infrared phototransistor instrumentation through modeling.
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- Optical Engineering, 2014, v. 53, n. 5, p. 1, doi. 10.1117/1.OE.53.5.054104
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- Article
Far-infrared radiation from n-InGaAs/GaAs quantum-well heterostructures in high lateral electric fields under injection conditions.
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- Semiconductors, 2014, v. 48, n. 5, p. 625, doi. 10.1134/S1063782614050029
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- Article