Found: 12
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Suppression of the quantum-confined Stark effect in polar nitride heterostructures.
- Published in:
- Communications Physics, 2018, v. 1, n. 1, p. N.PAG, doi. 10.1038/s42005-018-0044-1
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- Article
Optimal Silicon Doping Layers of Quantum Barriers in the Growth Sequence Forming Soft Confinement Potential of Eight-Period InGaN/GaN Quantum Wells of Blue LEDs.
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- Nanoscale Research Letters, 2017, v. 12, n. 1, p. 1, doi. 10.1186/s11671-017-2359-3
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- Article
Faceted growth of ()-oriented GaN domains on an SiO<sub>2</sub>-patterned m-plane sapphire substrate using polarity inversion.
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- Journal of Applied Crystallography, 2017, v. 50, n. 1, p. 30, doi. 10.1107/S1600576716015077
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- Article
Approaching Integrated Hybrid Neural Circuits: Axon Guiding on Optically Active Semiconductor Microtube Arrays.
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- Advanced Materials Interfaces, 2016, v. 3, n. 24, p. n/a, doi. 10.1002/admi.201600746
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- Article
Deep level traps in semi-polar n-GaN grown on patterned sapphire substrate by metalorganic vapor phase epitaxy.
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- Physica Status Solidi (B), 2016, v. 253, n. 11, p. 2225, doi. 10.1002/pssb.201600364
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- Article
Study of GeSn/SiGeSn RCE photodetectors based on Franz-Keldysh effect and quantum confined Stark effect.
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- Optical & Quantum Electronics, 2015, v. 47, n. 8, p. 2381, doi. 10.1007/s11082-014-9998-8
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- Article
Spectral diffusion in nitride quantum dots: Emission energy dependent linewidths broadening via giant built-in dipole moments.
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- Physica Status Solidi - Rapid Research Letters, 2014, v. 8, n. 5, p. 408, doi. 10.1002/pssr.201409096
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- Article
A method used to overcome polarization effects in semi-polar structures of nitride light-emitting diodes emitting green radiation.
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- Applied Physics A: Materials Science & Processing, 2013, v. 113, n. 3, p. 801, doi. 10.1007/s00339-013-7596-4
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- Article
Interplay between Coulomb interaction and quantum-confined Stark-effect in polar and nonpolar wurtzite InN/GaN quantum dots.
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- European Physical Journal B: Condensed Matter, 2013, v. 86, n. 11, p. 1, doi. 10.1140/epjb/e2013-40542-0
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- Article
Unintentional annealing of the active layer in the growth of In Ga N/ Ga N quantum well light-emitting diode structures.
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- Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 8, p. 1657, doi. 10.1002/pssa.201228824
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- Article
Static properties of planar Mach-Zehnder optical modulator on (110) InP substrate.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 14, p. 1, doi. 10.1049/el.2013.1659
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- Article
Effect of electric field on exciton in highpurity GaAs epilayer measured at room temperature.
- Published in:
- Electronics Letters (Wiley-Blackwell), 2013, v. 49, n. 1, p. 57, doi. 10.1049/el.2012.3728
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- Article