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Works matching DE "POWER field effect transistors"

Results: 3

1

Comparative analysis of breakdown mechanism in thin SiO oxide films in metal-oxide-semiconductor structures under the action of heavy charged particles and a pulsed voltage.

Published in:

Technical Physics, 2016, v. 61, n. 2, p. 187, doi. 10.1134/S1063784216020286

By:

Zinchenko, V.;
Lavrent'ev, K.;
Emel'yanov, V.;
Vatuev, A.

Publication type:

Article

2

Trapping mechanisms in insulated-gate GaN power devices: Understanding and characterization techniques.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2017, v. 214, n. 3, p. n/a, doi. 10.1002/pssa.201600607

By:

Yang, Shu;
Liu, Shenghou;
Lu, Yunyou;
Chen, Kevin J.

Publication type:

Article

3

Prospects for the development of high-power field-effect transistors based on heterostructures with donor-acceptor doping.

Published in:

Semiconductors, 2014, v. 48, n. 5, p. 666, doi. 10.1134/S1063782614050121

By:

Lukashin, V.;
Pashkovskii, A.;
Zhuravlev, K.;
Toropov, A.;
Lapin, V.;
Golant, E.;
Kapralova, A.

Publication type:

Article