Works matching DE "POOLE-Frenkel effect"

Results: 64

Resonant Tunneling Method for Measuring Fullerene Concentration in Organosilicon Composites.

Published in:

Measurement Techniques, 2016, v. 59, n. 6, p. 605, doi. 10.1007/s11018-016-1016-z

By:

Barshutina, M.;
Barshutin, S.;
Ushakov, A.

Publication type:

Article

The nature of the field dependence of drift mobility in molecularly doped polymers.

Published in:

Polymer Science -- Series A, 2016, v. 58, n. 5, p. 818, doi. 10.1134/S0965545X16050217

By:

Tyutnev, A.;
Saenko, V.;
Abrameshin, A.

Publication type:

Article

The temperature dependence and field dependence of the mobility of charge carriers in the multiple-trapping model with a Gaussian trap distribution.

Published in:

Polymer Science -- Series A, 2015, v. 57, n. 1, p. 94, doi. 10.1134/S0965545X15010125

By:

Tyutnev, A.;
Saenko, V.;
Nikerov, A.;
Linetskii, B.

Publication type:

Article

Electrical Characterization of TiO2 Insulator Based Pd / TiO2 / Si MIS Structure Deposited by Sol-Gel Process.

Published in:

Journal of Nano- & Electronic Physics, 2013, v. 5, n. 1, p. 01021-1

By:

Shubham, Kumar;
Khan, R. U.

Publication type:

Article

Determination shape of the potential well of traps in TlGaTe2 crystals.

Published in:

International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2023, v. 37, n. 28, p. 1, doi. 10.1142/S021797922350248X

By:

Abdullayev, A. P.;
Rzayev, R. M.;
Naghiyev, T. G.;
Mammadova, J. P.;
Aliyev, S. S.;
Musazade, I. V.

Publication type:

Article

A Compact Model of Ovonic Threshold Switch Combining Thermal Dissipation Effect.

Published in:

Frontiers in Neuroscience, 2021, v. 14, p. N.PAG, doi. 10.3389/fnins.2021.635264

By:

Zhang, Shiqing;
Xu, Hui;
Li, Zhiwei;
Liu, Sen;
Song, Bing;
Li, Qingjiang

Publication type:

Article

Thermionic Injection and Contact Resistance Model for Bottom Contact Organic Field-Effect Transistors.

Published in:

Journal of Electronic Materials, 2024, v. 53, n. 6, p. 3078, doi. 10.1007/s11664-024-11065-1

By:

Saikh, Samayun;
Rajan, Nikhitha;
Mukherjee, Ayash Kanto

Publication type:

Article

Effects of Bottom Electrode Materials on the Resistive Switching Characteristics of HfO2-Based RRAM Devices.

Published in:

Journal of Electronic Materials, 2023, v. 52, n. 2, p. 1541, doi. 10.1007/s11664-022-10136-5

By:

Arun, N.;
Nageswara Rao, S. V. S.;
Pathak, A. P.

Publication type:

Article

Analysis of Double Gaussian Distribution on Barrier Inhomogeneity in a Au/n-4H SiC Schottky Diode.

Published in:

Journal of Electronic Materials, 2021, v. 50, n. 12, p. 7044, doi. 10.1007/s11664-021-09254-3

By:

Gullu, H. H.;
Seme Sirin, D.;
Yıldız, D. E.

Publication type:

Article

Effect of dopant segregation and negative differential mobility on multi-quantum well activation energy.

Published in:

Journal of Materials Science, 2017, v. 52, n. 9, p. 5223, doi. 10.1007/s10853-017-0763-9

By:

Pedroso, D.;
Santos, T.;
Delfino, C.;
Vieira, G.;
Fernandes, F.;
Quivy, A.;
Passaro, A.

Publication type:

Article

Current conduction mechanisms in HfO2 and SrHfON thin films prepared by magnetron sputtering.

Published in:

Journal of Materials Science, 2014, v. 49, n. 4, p. 1875, doi. 10.1007/s10853-013-7876-6

By:

Feng, Li-ping;
Li, Ning;
Tian, Hao;
Liu, Zheng-tang

Publication type:

Article

Different degradation mechanism by conduction region in AsTeGeSiN threshold switching device.

Published in:

Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 22, p. 1202, doi. 10.1049/el.2020.1946

By:

Choi, H.-S.

Publication type:

Article

Cryogenic characterisation of 55 nm SONOS charge-trapping memory in AC and DC modes.

Published in:

Electronics Letters (Wiley-Blackwell), 2020, v. 56, n. 4, p. 199, doi. 10.1049/el.2019.3229

By:

Lin-Jie Fan;
Jin-Shun Bi;
Yan-Nan Xu;
Kai Xi;
Yao Ma;
Ming Liu;
Majumdar, Sandip

Publication type:

Article

Quantitative Analysis of Positive-Bias-Stress-Induced Electron Trapping in the Gate Insulator in the Self-Aligned Top Gate Coplanar Indium–Gallium–Zinc Oxide Thin-Film Transistors.

Published in:

Coatings (2079-6412), 2021, v. 11, n. 10, p. 1192, doi. 10.3390/coatings11101192

By:

Kim, Dae-Hwan;
Jeong, Hwan-Seok;
Lee, Dong-Ho;
Bae, Kang-Hwan;
Lee, Sunhee;
Kim, Myeong-Ho;
Lim, Jun-Hyung;
Kwon, Hyuck-In

Publication type:

Article

Analysis of Dislocations in CdZnTe Epitaxial Film with Kelvin Probe and Conductive Atomic Force Microscopy.

Published in:

Journal of Electronic Materials, 2020, v. 49, n. 6, p. 3907, doi. 10.1007/s11664-020-08094-x

By:

Cao, Kun;
Jie, Wanqi;
Zha, Gangqiang;
Dong, Jiangpeng;
Hu, Ruiqi;
Li, Yang

Publication type:

Article

Enhancement in the Microelectronic Properties of a PFB–CdSe Quantum Dots Nanocomposite Based Schottky Barrier Diode.

Published in:

Journal of Electronic Materials, 2019, v. 48, n. 8, p. 5169, doi. 10.1007/s11664-019-07328-x

By:

Muhammad, Fida;
Tahir, Muhammad;
Zeb, Muhammad;
Uddin, Syed Izaz;
Ahmed, Sohail

Publication type:

Article

The Role of Work Function and Band Gap in Resistive Switching Behaviour of ZnTe Thin Films.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 2, p. 1620, doi. 10.1007/s11664-017-5979-6

By:

Rowtu, Srinu;
Sangani, L.;
Krishna, M.

Publication type:

Article

Temperature-Dependent Electrical Properties and Carrier Transport Mechanisms of TMAH-Treated Ni/Au/AlO/GaN MIS Diode.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 11, p. 5655, doi. 10.1007/s11664-016-4809-6

By:

Reddy, M.;
Puneetha, Peddathimula;
Reddy, V.;
Lee, Jung-Hee;
Jeong, Seong-Hoon;
Park, Chinho

Publication type:

Article

Effects of Annealing on Electrical Characteristics and Current Transport Mechanisms of the Y/ p-GaN Schottky Diode.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 7, p. 3268, doi. 10.1007/s11664-016-4490-9

By:

Reddy, V.;
Asha, B.;
Choi, Chel-Jong

Publication type:

Article

Effect of Temperature Cycling on Conduction Mechanisms in CdTe Thin Films.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 3, p. 389, doi. 10.1007/s11664-012-2344-7

By:

Srivastav, V.;
Pal, R.;
Saini, N.;
Saxena, R.;
Bhan, R.;
Sareen, L.;
Singh, K.;
Sharma, R.;
Venkataraman, V.

Publication type:

Article

A study on electrical properties of Au/4H-SiC Schottky diode under illumination.

Published in:

Journal of Materials Science: Materials in Electronics, 2021, v. 32, n. 15, p. 20130, doi. 10.1007/s10854-021-06480-7

By:

Yıldız, D. E.;
Karadeniz, S.;
Gullu, H. H.

Publication type:

Article

Analysis of temperature-dependent forward and leakage conduction mechanisms in organic thin film heterojunction diode with fluorine-based PCBM blend.

Published in:

Journal of Materials Science: Materials in Electronics, 2020, v. 31, n. 18, p. 15233, doi. 10.1007/s10854-020-04088-x

By:

Yıldız, D. E.;
Gullu, H. H.;
Toppare, L.;
Cirpan, A.

Publication type:

Article

Analysis of forward and reverse biased current–voltage characteristics of Al/Al2O3/n-Si Schottky diode with atomic layer deposited Al2O3 thin film interlayer.

Published in:

Journal of Materials Science: Materials in Electronics, 2019, v. 30, n. 21, p. 19383, doi. 10.1007/s10854-019-02300-1

By:

Gullu, H. H.;
Yildiz, D. E.

Publication type:

Article

Parameter extraction of gate tunneling current in metal-insulator-semiconductor capacitors based on ultra-thin atomic-layer deposited Al2O3.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 18, p. 15496, doi. 10.1007/s10854-018-9104-2

By:

Uribe-Vargas, Hector;
Molina-Reyes, Joel

Publication type:

Article

Modified electrical properties and transport mechanism of Ti/p-InP Schottky structure with a polyvinylpyrrolidone (PVP) polymer interlayer.

Published in:

Journal of Materials Science: Materials in Electronics, 2017, v. 28, n. 6, p. 4847, doi. 10.1007/s10854-016-6131-8

By:

Siva Pratap Reddy, M.;
Sreenu, K.;
Rajagopal Reddy, V.;
Park, Chinho

Publication type:

Article

Study of electrical properties of hafnium oxide thin film based metal-insulator-metal capacitors: pre and post metallic annealing.

Published in:

Journal of Materials Science: Materials in Electronics, 2016, v. 27, n. 12, p. 12527, doi. 10.1007/s10854-016-5783-8

By:

Mangla, O.;
Gupta, V.

Publication type:

Article

Stabilized resistive switching behaviors of a Pt/TaO x/TiN RRAM under different oxygen contents.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2014, v. 211, n. 9, p. 2189, doi. 10.1002/pssa.201431260

By:

Jeon, Heeyoung;
Park, Jingyu;
Jang, Woochool;
Kim, Hyunjung;
Kang, Chunho;
Song, Hyoseok;
Kim, Honggi;
Seo, Hyungtak;
Jeon, Hyeongtag

Publication type:

Article

Origin of Off‐State Current in Multilayered MoTe2 Field‐Effect Transistors: Gate‐Induced Drain Leakage and Poole–Frenkel Conduction.

Published in:

Physica Status Solidi - Rapid Research Letters, 2020, v. 14, n. 7, p. 1, doi. 10.1002/pssr.202000158

By:

Seo, Seung Gi;
Park, Young Ho;
Jeong, Jinheon;
Kim, Seung Yeob;
Jin, Sung Hun

Publication type:

Article

Еlectronic currents in the (+)Bi/BiO/electrolyte system during tensiostatic anodization.

Published in:

Journal of Solid State Electrochemistry, 2013, v. 17, n. 8, p. 2341, doi. 10.1007/s10008-013-2109-0

By:

Girginov, Christian;
Petkova, Sashka

Publication type:

Article

The Frenkel–Poole Effect in the Ionization of an Acceptor Impurity of Boron in Diamond in a Strong Electric Field.

Published in:

Journal of Communications Technology & Electronics, 2020, v. 65, n. 11, p. 1336, doi. 10.1134/S1064226920110029

By:

Altukhov, I. V.;
Kagan, M. S.;
Paprotskii, S. K.;
Khvalkovskii, N. A.;
Rodionov, N. B.;
Bolshakov, A. P.;
Ralchenko, V. G.;
Khmelnitskii, R. A.

Publication type:

Article

Synthesis of Peripherally Tetrasubstituted Phthalocyanines and Their Applications in Schottky Barrier Diodes.

Published in:

Journal of Chemistry, 2017, p. 1, doi. 10.1155/2017/9715069

By:

Gorduk, Semih;
Koyun, Ozge;
Avciata, Oguzhan;
Altindal, Ahmet;
Avciata, Ulvi

Publication type:

Article

Temperature-dependent resistive switching behavior of a hybrid semiconductor-oxide planar system.

Published in:

Applied Physics A: Materials Science & Processing, 2023, v. 129, n. 5, p. 1, doi. 10.1007/s00339-023-06616-y

By:

Majumder, S.;
Kumari, K.;
Ray, S. J.

Publication type:

Article

Heterostructure of GeSe2−xSnx/n-Si solar cells: electronic properties and improvement of photoelectrical performance.

Published in:

Applied Physics A: Materials Science & Processing, 2019, v. 125, n. 6, p. N.PAG, doi. 10.1007/s00339-019-2674-x

By:

Alharbi, S. R.;
Darwish, A. A. A.

Publication type:

Article

Nanoparticle-assisted Frenkel-Poole emission in two-terminal charging-controlled memory devices based on Si-rich silicon nitride thin films.

Published in:

Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 10, p. 1, doi. 10.1007/s00339-017-1279-5

By:

Liu, Zhen;
Wang, Xiao;
Wong, Jen;
Cen, Zhan;
Chen, T.;
Zhang, Hai

Publication type:

Article

The influence of preferred orientation and poling temperature on the polarization switching current in PZT thin films.

Published in:

Applied Physics A: Materials Science & Processing, 2017, v. 123, n. 7, p. 1, doi. 10.1007/s00339-017-1100-5

By:

Xiao, Mi;
Zhang, Weikang;
Zhang, Zebin;
Zhang, Ping;
Lan, Kuibo

Publication type:

Article

Effect of layer thickness on the electrical parameters and conduction mechanisms of conjugated polymer-based heterojunction diode.

Published in:

Journal of Applied Polymer Science, 2017, v. 134, n. 19, p. n/a, doi. 10.1002/app.44817

By:

Yıldız, D. E.;
Apaydın, D. H.;
Toppare, L.;
Cirpan, A.

Publication type:

Article

Prediction of the Magnitude of the Trapped Charge in the Buried Oxide of Silicon-on-Insulator Structures Using the Poole–Frenkel Effect.

Published in:

Semiconductors, 2020, v. 54, n. 5, p. 518, doi. 10.1134/S1063782620050127

By:

Shiryaev, A. A.;
Vorotyntsev, V. M.;
Shobolov, E. L.

Publication type:

Article

On the Poole–Frenkel Effect in Polycrystalline Europium Sulfide.

Published in:

Semiconductors, 2019, v. 53, n. 7, p. 872, doi. 10.1134/S1063782619070121

By:

Kazanin, M. M.;
Kaminski, V. V.;
Grevtsev, M. A.

Publication type:

Article

DLTS Investigation of the Energy Spectrum of Si:Mg Crystals.

Published in:

Semiconductors, 2019, v. 53, n. 6, p. 789, doi. 10.1134/S1063782619060290

By:

Yarykin, N.;
Shuman, V. B.;
Portsel, L. M.;
Lodygin, A. N.;
Astrov, Yu. A.;
Abrosimov, N. V.;
Weber, J.

Publication type:

Article

Electrical and Optical Characteristics of Si-Nanoparticle Films Deposited onto Substrates by High-Voltage Electrospraying from Ethanol Sols.

Published in:

Semiconductors, 2019, v. 53, n. 4, p. 552, doi. 10.1134/S1063782619040158

By:

Kononov, N. N.;
Davydova, D. V.;
Bubenov, S. S.;
Dorofeev, S. G.

Publication type:

Article

Poole-Frenkel Effect and the Opportunity of Its Application for the Prediction of Radiation Charge Accumulation in Thermal Silicon Dioxide.

Published in:

Semiconductors, 2018, v. 52, n. 9, p. 1114, doi. 10.1134/S1063782618090166

By:

Shiryaev, A. A.;
Vorotyntsev, V. M.;
Shobolov, E. L.

Publication type:

Article

Features of the dark conductivity of zinc selenide.

Published in:

Semiconductors, 2014, v. 48, n. 3, p. 273, doi. 10.1134/S1063782614030087

By:

Degoda, V.;
Podust, G.

Publication type:

Article

Current-voltage characteristics of MnGaSe single crystals.

Published in:

Semiconductors, 2012, v. 46, n. 6, p. 701, doi. 10.1134/S1063782612060231

By:

Tagiev, B.;
Tagiev, O.;
Asadullayeva, S.;
Eyyubov, Q.

Publication type:

Article

Memory switching characteristics in amorphous ZnIn2Se4 thin films.

Published in:

Surface Engineering, 2015, v. 31, n. 7, p. 556, doi. 10.1179/1743294415Y.0000000001

By:

Dhruv, D. K.;
Nowicki, A.;
Patel, B. H.;
Dhamecha, V. D.

Publication type:

Article

Nonlinear interactions in an organic polariton condensate.

Published in:

Nature Materials, 2014, v. 13, n. 3, p. 271, doi. 10.1038/nmat3874

By:

Daskalakis, K. S.;
Maier, S. A.;
Murray, R.;
Kéna-Cohen, S.

Publication type:

Article

Trap-assisted conductivity in anodic oxide on InSb.

Published in:

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2017, v. 20, n. 4, p. 470, doi. 10.15407/spqeo20.04.470

By:

Beketov, G. V.;
Sukach, A. V.;
Tetyorkin, V. V.;
Trotsenko, S. P.

Publication type:

Article

Modelling of Intrinsic Defects in CaYAl3O7.

Published in:

Acta Physica Polonica: A, 2018, v. 133, n. 4, p. 781, doi. 10.12693/APhysPolA.133.781

By:

DA C. BISPO, G. F.;
JACKSON, R. A.;
VALERIO, M. E. G.

Publication type:

Article

Correlation between the Band-Gap Energy and the Electrical Conductivity in MPr2W2O10 Tungstates (Where M = Cd, Co, Mn).

Published in:

Acta Physica Polonica: A, 2016, v. 129, n. 1A, p. A-94, doi. 10.12693/APhysPolA.129.A-94

By:

SAWICKI, B.;
TOMASZEWICZ, E.;
PIĄTKOWSKA, M.;
GROŃ, T.;
DUDA, H.;
GÓRNY, K.

Publication type:

Article

CONDUCTION MECHANISMS IN ORGANIC-BASED RECTIFYING DIODE.

Published in:

Anadolu University of Sciences & Technology A: Applied Sciences & Engineering, 2016, v. 17, n. 4, p. 717, doi. 10.18038/aubtda.267118

By:

ORUÇ, Çiğdem;
ERKOL, Arden;
ALTINDAL, Ahmet

Publication type:

Article

Electrical characterisation of epitaxial AlN/Nb2N heterostructures grown by molecular beam epitaxy.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 14, p. 1263, doi. 10.1049/el.2016.0331

By:

Downey, B. P.;
Katzer, D. S.;
Nepal, N.;
Meyer, D. J.;
Storm, D. F.;
Wheeler, V. D.;
Hardy, M. T.

Publication type:

Article