Works matching DE "PHOTOCONDUCTING devices"

Results: 47

Contents: (Adv. Funct. Mater. 6/2017).

Published in:: Advanced Functional Materials, 2017, v. 27, n. 6, p. n/a, doi. 10.1002/adfm.201770034
Publication type:: Article

High-Sensitivity Floating-Gate Phototransistors Based on WS2 and MoS2.

Published in:

Advanced Functional Materials, 2016, v. 26, n. 33, p. 6084, doi. 10.1002/adfm.201601346

By:

Gong, Fan;
Luo, Wenjin;
Wang, Jianlu;
Wang, Peng;
Fang, Hehai;
Zheng, Dingshan;
Guo, Nan;
Wang, Jingli;
Luo, Man;
Ho, Johnny C.;
Chen, Xiaoshuang;
Lu, Wei;
Liao, Lei;
Hu, Weida

Publication type:

Article

Ir Detectors: Ultrahigh Infrared Photoresponse from Core-Shell Single-Domain-VO2/V2O5 Heterostructure in Nanobeam (Adv. Funct. Mater. 13/2014).

Published in:

Advanced Functional Materials, 2014, v. 24, n. 13, p. 1820, doi. 10.1002/adfm.201470083

By:

Li, Zejun;
Hu, Zhenpeng;
Peng, Jing;
Wu, Changzheng;
Yang, Yuchen;
Feng, Feng;
Gao, Peng;
Yang, Jinlong;
Xie, Yi

Publication type:

Article

Photodiode based on Pb0.9Cd0.1S ternary alloy semiconductor for solar tracking systems.

Published in:

Journal of Materials Science: Materials in Electronics, 2018, v. 29, n. 19, p. 16880, doi. 10.1007/s10854-018-9783-8

By:

Wageh, S.;
Karabulut, Abdulkerim;
Dere, A.;
Al-Sehemi, Abdullah G.;
Al-Ghamdi, Ahmed A.;
El-Tantawy, Farid;
Yakuphanoglu, F.

Publication type:

Article

Nanocrystalline ITO-SnS transparent thin films for photoconductive sensor applications.

Published in:

Journal of Materials Science: Materials in Electronics, 2013, v. 24, n. 10, p. 3694, doi. 10.1007/s10854-013-1305-0

By:

Motevalizadeh, L.;
Khorshidifar, M.;
Ebrahimizadeh Abrishami, M.;
Bagheri Mohagheghi, M.

Publication type:

Article

Effect of epitaxial layer's thickness on spectral response of 4H-SiC p-i-n ultraviolet photodiodes.

Published in:

Electronics Letters (Wiley-Blackwell), 2019, v. 55, n. 4, p. 216, doi. 10.1049/el.2018.8035

By:

Yansong Hou;
Cunzhi Sun;
Junkang Wu;
Rongdun Hong;
Jiafa Cai;
Xiaping Chen;
Dingqu Lin;
Zhengyun Wu

Publication type:

Article

Reduction of photodiode non-linearity by adaptive bias control.

Published in:

Electronics Letters (Wiley-Blackwell), 2017, v. 53, n. 3, p. 175, doi. 10.1049/el.2016.3409

By:

Frigo, N. J.;
Hutchinson, M. N.;
Williams, C. R. S.

Publication type:

Article

Evaluation of InGaAs/InP photodiode for high-speed operation at 4 K.

Published in:

International Journal of Metrology & Quality Engineering, 2018, v. 9, p. 1, doi. 10.1051/ijmqe/2018015

By:

Bardalen, Eivind;
Karlsen, Bjørnar;
Malmbekk, Helge;
Akram, Muhammed Nadeem;
Ohlckers, Per

Publication type:

Article

Reversed Phase High-Performance Liquid Chromatographic Ultra-violet (Photo Diode Array) Quantification of Oleanolic Acid and its Isomer Ursolic Acid for Phytochemical Comparison and Pharmacological Evaluation of Four Leucas Species Used in Ayurveda.

Published in:

Pharmacognosy Magazine, 2016, v. 12, p. S159, doi. 10.4103/0973-1296.182173

By:

Shukla, Pushpendra Kumar;
Misra, Ankita;
Srivastava, Sharad;
Rawat, Ajay K. S.

Publication type:

Article

InAsSbP Photodiodes for 2.6-2.8-µm Wavelengths.

Published in:

Technical Physics, 2018, v. 63, n. 2, p. 226, doi. 10.1134/S1063784218020172

By:

Il'inskaya, N. D.;
Karandashev, S. A.;
Lavrov, A. A.;
Matveev, B. A.;
Remennyi, M. A.;
Stus, N. M.;
Usikova, A. A.

Publication type:

Article

High performance silicon carbide avalanche-p-i-n ultraviolet photodiode with dual operation models.

Published in:

Electronics Letters (Wiley-Blackwell), 2016, v. 52, n. 17, p. 1474, doi. 10.1049/el.2016.2025

By:

Mingkun Zhang;
Wang, Kang L.;
Hexin Jiang;
Rongdun Hong;
Zhengyun Wu

Publication type:

Article

BiCMOS-integrated photodiode exploiting drift enhancement.

Published in:

Optical Engineering, 2014, v. 53, n. 8, p. 1, doi. 10.1117/1.OE.53.8.087103

By:

Swoboda, Robert;
Schneider-Hornstein, Kerstin;
Wille, Holger;
Langguth, Gernot;
Zimmermann, Horst

Publication type:

Article

Temperature dependence on photosensitive area extension in mercury cadmium telluride photodiodes using laser beam induced current.

Published in:

Optical Engineering, 2012, v. 51, n. 3, p. 036401-1, doi. 10.1117/1.OE.51.3.036401

By:

Yongguo Chen;
Weida Hu;
Xiaoshuang Chen;
Zhenhua Ye;
Jun Wang;
Xiaofang Wang;
Chenhui Yu;
Wei Lu

Publication type:

Article

Self-Balancing Position-Sensitive Detector (SBPSD).

Published in:

Sensors (14248220), 2015, v. 15, n. 7, p. 17483, doi. 10.3390/s150717483

By:

Porrazzo, Ryan;
Lydecker, Leigh;
Gattu, Suhasini;
Bakhru, Hassaram;
Tokranova, Natalya;
Castracane, James

Publication type:

Article

Phototransistors with Negative or Ambipolar Photoresponse Based on As‐Grown Heterostructures of Single‐Walled Carbon Nanotube and MoS2.

Published in:

Advanced Functional Materials, 2018, v. 28, n. 40, p. 1, doi. 10.1002/adfm.201802572

By:

Nguyen, Van Tu;
Yim, Woongbin;
Park, Sae June;
Son, Byung Hee;
Kim, Young Chul;
Cao, Thi Thanh;
Sim, Yumin;
Moon, Yoon‐Jong;
Nguyen, Van Chuc;
Seong, Maeng‐Je;
Kim, Sun‐Kyung;
Ahn, Yeong Hwan;
Lee, Soonil;
Park, Ji‐Yong

Publication type:

Article

Optimised THz photoconductive devices based on low‐temperature grown III–V compound semiconductors incorporating distributed Bragg reflectors.

Published in:

IET Optoelectronics (Wiley-Blackwell), 2017, v. 11, n. 2, p. 53, doi. 10.1049/iet-opt.2016.0055

By:

Wang, Yuekun;
Kostakis, Ioannis;
Saeedkia, Daryoosh;
Missous, Mohamed

Publication type:

Article

Terahertz frequency generation with monolithically integrated dual wavelength distributed Bragg reflector semiconductor laser diode.

Published in:

IET Optoelectronics (Wiley-Blackwell), 2017, v. 11, n. 2, p. 49, doi. 10.1049/iet-opt.2016.0054

By:

Gwaro, Jared O.;
Brenner, Carsten;
Sumpf, Bernd;
Klehr, Andreas;
Fricke, Jörg;
Hofmann, Martin R.

Publication type:

Article

Efficient terahertz devices based on III–V semiconductor photoconductors.

Published in:

IET Optoelectronics (Wiley-Blackwell), 2014, v. 8, n. 2, p. 33, doi. 10.1049/iet-opt.2013.0057

By:

Kostakis, Ioannis;
Saeedkia, Daryoosh;
Missous, Mohamed

Publication type:

Article

P‐Type SnO Thin Film Phototransistor with Perovskite‐Mediated Photogating.

Published in:

Advanced Electronic Materials, 2019, v. 5, n. 1, p. N.PAG, doi. 10.1002/aelm.201800538

By:

Guan, Xinwei;
Wang, Zhenwei;
Hota, Mrinal K.;
Alshareef, Husam N.;
Wu, Tom

Publication type:

Article

Ambipolar Organic Phototransistors with p‐Type/n‐Type Conjugated Polymer Bulk Heterojunction Light‐Sensing Layers.

Published in:

Advanced Electronic Materials, 2016, v. 2, n. 12, p. 1, doi. 10.1002/aelm.201600264

By:

Nam, Sungho;
Han, Hyemi;
Seo, Jooyeok;
Song, Myeonghun;
Kim, Hwajeong;
Anthopoulos, Thomas D.;
McCulloch, Iain;
Bradley, Donal D. C.;
Kim, Youngkyoo

Publication type:

Article

Measuring of the relative milk mass fraction in water-milk solution.

Published in:

Przegląd Elektrotechniczny, 2017, v. 93, n. 3, p. 83, doi. 10.15199/48.2017.03.20

By:

KUCHERUK, Volodymyr;
PALAMARCHUK, Evgen;
KULAKOV, Pavel;
STOROZHUK, Natalia;
WÓJCIK, Waldemar;
ZHASSANDYKYZY, Maral

Publication type:

Article

A 3D Optical Sensor Using Optical Axis Deviation Method for Rotational Errors.

Published in:

Sensors & Materials, 2016, v. 28, n. 9, p. 1053, doi. 10.18494/sam.2016.1394

By:

Hau-Wei Lee;
Te-Ping Chiu;
Chien-Hung Liu

Publication type:

Article

Simulation of photoconductive antennas for terahertz radiation.

Published in:

Revista Ingeniería e Investigación, 2015, v. 35, n. 1, p. 60, doi. 10.15446/ing.investig.v35n1.45310

By:

Criollo, C. A.;
Ávila, A.

Publication type:

Article

Characterisation of InGaN by Photoconductive Atomic Force Microscopy.

Published in:

Materials (1996-1944), 2018, v. 11, n. 10, p. 1794, doi. 10.3390/ma11101794

By:

Weatherley, Thomas F. K.;
Massabuau, Fabien C.-P.;
Kappers, Menno J.;
Oliver, Rachel A.

Publication type:

Article

High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering.

Published in:

Materials (1996-1944), 2017, v. 10, n. 2, p. 126, doi. 10.3390/ma10020126

By:

Jyun-Yi Li;
Sheng-Po Chang;
Ming-Hung Hsu;
Shoou-Jinn Chang

Publication type:

Article

Fingerprint Analysis of Desmodium Triquetrum L. Based on Ultra Performance Liquid Chromatography with Photodiode Array Detector Combined with Chemometrics Methods.

Published in:

Journal of Chromatographic Science, 2016, v. 54, n. 5, p. 706, doi. 10.1093/chromsci/bmv242

By:

Meiling Zhang;
Cui Zhao;
Xianrui Liang;
Yin Ying;
Bing Han;
Bo Yang;
Cheng Jiang

Publication type:

Article

Thin-Film Quantum Dot Photodiode for Monolithic Infrared Image Sensors.

Published in:

Sensors (14248220), 2017, v. 17, n. 12, p. 2867, doi. 10.3390/s17122867

By:

Malinowski, Pawel E.;
Georgitzikis, Epimitheas;
Maes, Jorick;
Vamvaka, Ioanna;
Frazzica, Fortunato;
Van Olmen, Jan;
De Moor, Piet;
Heremans, Paul;
Hens, Zeger;
Cheyns, David

Publication type:

Article

Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors.

Published in:

Sensors (14248220), 2017, v. 17, n. 12, p. 2841, doi. 10.3390/s17122841

By:

Stevens, Eric G.;
Clayhold, Jeffrey A.;
Doan, Hung;
Fabinski, Robert P.;
Hynecek, Jaroslav;
Kosman, Stephen L.;
Parks, Christopher

Publication type:

Article

Parametric Optimization of Lateral NIPIN Phototransistors for Flexible Image Sensors.

Published in:

Sensors (14248220), 2017, v. 17, n. 8, p. 1774, doi. 10.3390/s17081774

By:

Min Seok Kim;
Gil Ju Lee;
Hyun Myung Kim;
Young Min Song

Publication type:

Article

Hybrid Analytical-Numerical Analysis of Plasmonic Photoconductive Antennas.

Published in:

Applied Computational Electromagnetics Society Journal, 2016, v. 31, n. 5, p. 537

By:

Khorshidi, Mohammadreza;
Dadashzadeh, Gholamreza

Publication type:

Article

Influence of parameters of the semiconductor-dielectric interface on the current of the guard ring of silicon photodiodes.

Published in:

Journal of Communications Technology & Electronics, 2016, v. 61, n. 3, p. 328, doi. 10.1134/S1064226916030074

By:

Demidov, S.;
Klimanov, E.

Publication type:

Article

Properties of correlators of thermal and photoinduced stochastic fields of charge-carrier concentrations and currents in IR photodiodes.

Published in:

Journal of Communications Technology & Electronics, 2016, v. 61, n. 3, p. 352, doi. 10.1134/S1064226916030165

By:

Selyakov, A.;
Burlakov, I.;
Filachev, A.

Publication type:

Article

Atomic emission analysis of human hair for the presence of trace elements.

Published in:

Journal of Analytical Chemistry, 2016, v. 71, n. 7, p. 717, doi. 10.1134/S1061934816070078

By:

Drobyshev, A.;
Ryadchikova, N.;
Savinov, S.

Publication type:

Article

Broadband All-Polymer Phototransistors with Nanostructured Bulk Heterojunction Layers of NIR-Sensing n-Type and Visible Light-Sensing p-Type Polymers.

Published in:

Scientific Reports, 2015, p. 16457, doi. 10.1038/srep16457

By:

Han, Hyemi;
Nam, Sungho;
Seo, Jooyeok;
Lee, Chulyeon;
Kim, Hwajeong;
Bradley, Donal D. C.;
Ha, Chang-Sik;
Kim, Youngkyoo

Publication type:

Article

Charge-layer design considerations in SAGCM InGaAs/InAlAs avalanche photodiodes.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2016, v. 213, n. 4, p. 925, doi. 10.1002/pssa.201532556

By:

Kleinow, P.;
Rutz, F.;
Aidam, R.;
Bronner, W.;
Heussen, H.;
Walther, M.

Publication type:

Article

Ultrafast study of charge generation and device performance of a silole-doped fluorene-mixed layer for blue-sensitive organic photoconductive devices.

Published in:

Physica Status Solidi. A: Applications & Materials Science, 2013, v. 210, n. 12, p. 2674, doi. 10.1002/pssa.201329366

By:

Fukuda, Takeshi;
Kimura, Sho;
Kobayashi, Ryohei;
Furube, Akihiro

Publication type:

Article

BEHAVIORS OF PHOTOCONDUCTIVE DETECTORS BASED ON MAPbI3 PEROVSKITE FILMS.

Published in:

Surface Review & Letters, 2018, v. 25, n. 2, p. -1, doi. 10.1142/S0218625X18500579

By:

YU, GENYUAN;
FENG, LISHA;
MENG, LU;
YE, ZHIZHEN;
LU, JIANGUO

Publication type:

Article

Effect of Pulsed Gamma-Neutron Irradiation on the Photosensitivity of Si-Based Photodiodes with GeSi Nanoislands and Ge Epitaxial Layers.

Published in:

Semiconductors, 2018, v. 52, n. 6, p. 797, doi. 10.1134/S1063782618060064

By:

Ivanova, M. M.;
Kachemtsev, A. N.;
Mikhaylov, A. N.;
Filatov, D. O.;
Gorshkov, A. P.;
Volkova, N. S.;
Chalkov, V. Yu.;
Shengurov, V. G.

Publication type:

Article

Photodiode 1 × 64 linear array based on a double p-InAsSbP/ n-InAsSb/ n-InAs heterostructure.

Published in:

Semiconductors, 2016, v. 50, n. 5, p. 646, doi. 10.1134/S1063782616050122

By:

Il'inskaya, N.;
Karandashev, S.;
Karpukhina, N.;
Lavrov, A.;
Matveev, B.;
Remennyi, M.;
Stus, N.;
Usikova, A.

Publication type:

Article

Degradation and Its Control of Ultraviolet Avalanche Photodiodes Using PEDOT:PSS/ZnSSe Organic-Inorganic Hybrid Structure.

Published in:

Journal of Electronic Materials, 2018, v. 47, n. 8, p. 4385, doi. 10.1007/s11664-018-6365-8

By:

Abe, Tomoki;
Uchida, Shigeto;
Tanaka, Keita;
Fujisawa, Takanobu;
Kasada, Hirofumi;
Ando, Koshi;
Akaiwa, Kazuaki;
Ichino, Kunio

Publication type:

Article

Effect of Si Growth Temperature on Fabrication of Si-ZnO Coaxial Nanorod Heterostructure on (100) Si Substrate.

Published in:

Journal of Electronic Materials, 2017, v. 46, n. 7, p. 4119, doi. 10.1007/s11664-017-5317-z

By:

Yoon, Im;
Cho, Hak;
Cho, Hoon;
Kwak, Dong;
Lee, Sejoon

Publication type:

Article

Electrical Characteristics of Mid-wavelength HgCdTe Photovoltaic Detectors Exposed to Gamma Irradiation.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 9, p. 4640, doi. 10.1007/s11664-016-4466-9

By:

Qiao, H.;
Hu, W.;
Li, T.;
Li, X.;
Chang, Y.

Publication type:

Article

Ultraviolet Photoconductive Detectors Based on A-Plane ZnO Film Grow by Hydrothermal Method.

Published in:

Journal of Electronic Materials, 2016, v. 45, n. 2, p. 1073, doi. 10.1007/s11664-015-4289-0

By:

Yu, Naisen;
Dong, Dapeng;
Qi, Yan;
Wu, Yunfeng;
Chen, Lu

Publication type:

Article

Development of Fuses for Protection of Geiger-Mode Avalanche Photodiode Arrays.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 11, p. 4187, doi. 10.1007/s11664-015-3975-2

By:

Grzesik, Michael;
Bailey, Robert;
Mahan, Joe;
Ampe, Jim

Publication type:

Article

Complex Behavior of Time Response of HgCdTe HOT Photodetectors.

Published in:

Journal of Electronic Materials, 2015, v. 44, n. 9, p. 3163, doi. 10.1007/s11664-015-3858-6

By:

Pawluczyk, J.;
Piotrowski, J.;
Pusz, W.;
Koźniewski, A.;
Orman, Z.;
Gawron, W.;
Piotrowski, A.

Publication type:

Article

Design and Growth of Visible-Blind and Solar-Blind III-N APDs on Sapphire Substrates.

Published in:

Journal of Electronic Materials, 2013, v. 42, n. 5, p. 854, doi. 10.1007/s11664-013-2537-8

By:

Suvarna, Puneet;
Tungare, Mihir;
Leathersich, Jeffrey;
Agnihotri, Pratik;
Shahedipour-Sandvik, F.;
Douglas Bell, L.;
Nikzad, Shouleh

Publication type:

Article

Simultaneous Determination of Paeoniflorin and Albiflorin in Radix Paeoniae Rubra by HPLC-DAD-ELSD.

Published in:

Acta Chromatographica, 2017, v. 29, n. 2, p. 279, doi. 10.1556/1326.2017.29.2.12

By:

MEI-XIA ZHU;
SHENG-NAN LI;
HAI-DAN YOU;
BIN HAN;
ZHI-PING WANG;
YAN-XI HU;
JIN LI;
YU-FENG LIU

Publication type:

Article